Patents by Inventor Dwight Christopher Streit

Dwight Christopher Streit has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6452464
    Abstract: An acoustic charge transport device is formed by a process which introduces a process dependent variation in charge carrier density within the device. The acoustic charge transport device includes a transport channel operable to carry charge carriers in response to a surface acoustic wave. In addition, the acoustic charge transport device further includes a backgate for controlling the charge carrier density within the transport channel.
    Type: Grant
    Filed: July 27, 1992
    Date of Patent: September 17, 2002
    Assignee: TRW Inc.
    Inventors: Chung-Hsu Chen, Daniel K. Ko, Edward M. Garber, Scott R. Olson, Dwight Christopher Streit
  • Patent number: 5838031
    Abstract: 4-terminal HEMT-HBT composite devices, based upon monolithically integrated HEMT-HBT technology and configured in various topologies, are useful in a wide range of applications which currently utilize discrete MMICs. In particular, the 4-terminal topologies are easily configured as 3-terminal composite devices useful in various 2-port and 3-port MMIC circuit applications, such as low noise-high linearity amplifiers as well as mixers, which provide the benefits of a reduction in size, as well as corresponding cost while providing better performance than utilizing either HEMT or HBT devices individually.
    Type: Grant
    Filed: March 5, 1996
    Date of Patent: November 17, 1998
    Assignee: TRW Inc.
    Inventors: Kevin Wesley Kobayashi, Dwight Christopher Streit, Aaron Kenji Oki, Donald Katsu Umemto
  • Patent number: 5672522
    Abstract: A method for fabricating an HBT in which the subcollector-base junction, which contributes to the base-collector capacitance of the device, is reduced by using a selective subcollector. In particular, subcollector areas of the device that do not contribute to collector resistance reduction are eliminated, thereby reducing the subcollector area, which, in turn, reduces the base-collector capacitance. As such, the maximum power-gain frequency f.sub.max is increased.
    Type: Grant
    Filed: March 5, 1996
    Date of Patent: September 30, 1997
    Assignee: TRW Inc.
    Inventors: Dwight Christopher Streit, Michael Lammert, Aaron Kenji Oki
  • Patent number: 5648666
    Abstract: This invention discloses a heterojunction bipolar transistor (HBT) which includes a relatively thin intrinsic collector region and a relatively thick extrinsic collector region such that collector-base capacitance is reduced and electron transit time is maintained. The fabrication of the HBT includes loading a semi-insulating substrate into an molecular beam epitaxy machine, and growing a sub-collector contact layer, a bottom collector layer and a top collector layer on the substrate. Next, the substrate is removed from the molecular beam epitaxy machine and the top collector layer is etched by a photolithographic process to produce separate intrinsic and extrinsic collector regions. Then, the substrate is again loaded into the molecular beam epitaxy machine so that the base and emitter layers can be grown. And finally, the emitter layer is etched to form an emitter mesa only over the intrinsic semiconductor region.
    Type: Grant
    Filed: April 13, 1994
    Date of Patent: July 15, 1997
    Assignee: TRW Inc.
    Inventors: Liem Thanh Tran, Dwight Christopher Streit, Aaron Kenji Oki