Abstract: A plasma treatment apparatus includes a chamber configured to treat a substrate; a direct plasma generation region in the chamber into which process gas is introduced to directly induce plasma; a plasma inducing assembly configured to induce the plasma to the direct plasma generation region; a substrate treatment region in the chamber in which the plasma and vaporized gas introduced from the outside of the chamber are mixed with each other to form reactive species and the substrate is treated by the reactive species; a dual gas distributing baffle configured to provide the plasma to the substrate treatment region and distribute the vaporized gas to a center region and a peripheral region of the substrate treatment region; a plurality of through-holes formed through the dual gas distributing baffle so as to provide plasma to the substrate treating region; and a center buffer region configured to store the vaporized gas.

Abstract: Disclosed herein is a plasma treating apparatus for vapor phase etching and cleaning. The plasma treating apparatus for vapor phase etching and cleaning includes: a reactor body treating a substrate to be treated; a direct plasma generation region in the reactor body into which process gas is introduced to directly induce plasma; a plasma inducing assembly inducing the plasma to the direct plasma generation region; a substrate treatment region in the reactor body in which the plasma introduced from the direct plasma generation region and vaporized gas introduced from the outside of the reactor body are mixed with each other to form reactive species and the substrate to be treated is treated by the reactive species; and a dual gas distributing baffle provided between the direct plasma generation region and the substrate treatment region to distribute the plasma to the substrate treatment region and distribute the vaporized gas to a center region and a peripheral region of the substrate treatment region.