Abstract: Methods for forming thin, low resistivity metal layers, such as tungsten (W) and ruthenium (Ru) layers. The methods include depositing a metal material onto a substrate via ion beam deposition with assist in a process chamber at a temperature of at least 250° C. to produce the metal film. A resulting thin tungsten film has large and highly oriented ?(110) grains having a resistivity less than 10 ??-cm and thickness less than 300 ?, with no discernable ?-phase. A resulting thin ruthenium film has a resistivity less than 12 ??-cm and a thickness less than 300 ?.

Abstract: Methods for forming thin, low resistivity metal layers, such as tungsten (W) and ruthenium (Ru) layers. The methods include depositing a metal material onto a substrate via ion beam deposition with assist in a process chamber at a temperature of at least 250° C. to produce the metal film. A resulting thin tungsten film has large and highly oriented ?(110) grains having a resistivity less than 9 ??-cm and thickness less than 300 ?, with no discernable ?-phase. A resulting thin ruthenium film has a resistivity less than 10 ??-cm and a thickness less than 300 ?.

Abstract: Methods for forming thin, low resistivity metal layers, such as tungsten (W) and ruthenium (Ru) layers. The methods include depositing a metal material onto a substrate via ion beam deposition with assist in a process chamber at a temperature of at least 250° C. to produce the metal film. A resulting thin tungsten film has large and highly oriented ?(110) grains having a resistivity less than 10 ??-cm and thickness less than 300 ?, with no discernable ?-phase. A resulting thin ruthenium film has a resistivity less than 12 ??-cm and a thickness less than 300 ?.

Abstract: Embodiments of the invention are directed to doped pnictogen chalcogenide nanoplates, where each nanoplate comprises a rhombohedral crystal of Bi2Te3, Bi2Se3, or Sb2Te3 that is sulfur doped. Another embodiment of the invention is directed to a microwave activated method of preparation of the doped pnictogen chalcogenide nanoplates. Other embodiments of the invention are directed to bulk assemblies or fused films of the doped pnictogen chalcogenide nanoplates and their preparation from the doped pnictogen chalcogenide nanoplates such that the bulk assembly or fused film can be employed in a thermoelectric device.

Abstract: Embodiments of the invention are directed to doped pnictogen chalcogenide nanoplates, where each nanoplate comprises a rhombohedral crystal of Bi2Te3, Bi2Se3, or Sb2Te3 that is sulfur doped. Another embodiment of the invention is directed to a microwave activated method of preparation of the doped pnictogen chalcogenide nanoplates. Other embodiments of the invention are directed to bulk assemblies or fused films of the doped pnictogen chalcogenide nanoplates and their preparation from the doped pnictogen chalcogenide nanoplates such that the bulk assembly or fused film can be employed in a thermoelectric device.