Abstract: A field effect transistor is disclosed similar to a junction field effect transistor, but in which the depletion width in the channel due to a PN junction adjoining the channel is controlled not by directly controlling the reverse voltage on the PN junction, but by reverse biasing a second PN junction such that the depletion region from the second PN junction meets the depletion region from the first PN junction (on the side other than the channel side) to thus restrict the width of the depletion regions due to the first PN junction.

Abstract: A new method of semiconductor operation has been conceived, developed and applied to produce a revolutionary new semiconductor design. The method is that of merging depletion regions for purposes of operation, isolation and control of channel current in a junction field-effect transistor. Using this method depletion regions are made to merge with suitable biasing in an intervening layer interposed between the gate and channel of a junction field-effect device and the interaction of the depletion regions is used for isolation and coupling to alter the associated depletion region in the channel of the junction field-effect device.A number of embodiments are disclosed of the new junction field-effect transistor controlled by merged depletion regions. In each embodiment a channel of one conductivity type material is formed in a semiconductor body of opposite type material.