Apparatus Patents (Class 117/200)
  • Patent number: 11932962
    Abstract: A method for producing a silicon ingot by the horizontal magnetic field Czochralski method includes rotating a crucible containing a silicon melt, applying a horizontal magnetic field to the crucible, contacting the silicon melt with a seed crystal, and withdrawing the seed crystal from the silicon melt while rotating the crucible to form a silicon ingot. The crucible has a wettable surface with a cristobalite layer formed thereon.
    Type: Grant
    Filed: April 5, 2022
    Date of Patent: March 19, 2024
    Assignee: GlobalWafers Co., Ltd.
    Inventors: JaeWoo Ryu, JunHwan Ji, WooJin Yoon, Richard J. Phillips, Carissima Marie Hudson
  • Patent number: 11873575
    Abstract: Ingot puller apparatus for preparing a single crystal silicon ingot by the Czochralski method are disclosed. The ingot puller apparatus includes a heat shield. The heat shield has a leg segment that includes a void (i.e., an open space without insulation) disposed in the leg segment. The heat shield may also include insulation partially within the heat shield.
    Type: Grant
    Filed: October 7, 2021
    Date of Patent: January 16, 2024
    Assignee: GlobalWafers Co., Ltd.
    Inventors: Jiaying Ke, Sumeet S. Bhagavat, Jaewoo Ryu, Benjamin Meyer, William Luter, Carissima Marie Hudson
  • Patent number: 11746439
    Abstract: A pressure container for crystal production having excellent corrosion-resistance is provided. This pressure container produces crystals within the container using a seed crystal, a mineralizer, a raw material, and ammonia in a supercritical state or a subcritical state as a solvent. The pressure container has Ag present over the entire surface of at least the inner surface thereof in contact with the solvent. The Ag can be disposed by one or a combination of two or more among, for instance, Ag lining, Ag welding, and Ag plating. The mineralizer is preferably a fluorine mineralizer containing no halogen atoms other than fluorine.
    Type: Grant
    Filed: April 5, 2018
    Date of Patent: September 5, 2023
    Assignees: JAPAN STEEL WORKS M&E, INC., TOHOKU UNIVERSITY
    Inventors: Kouhei Kurimoto, Quanxi Bao, Mutsuo Ueda, Yuji Sasagawa, Masaya Morimoto, Toru Ishiguro, Shigefusa Chichibu
  • Patent number: 11739436
    Abstract: Provided is an apparatus and a method for continuous crystal pulling. The apparatus includes: a crucible including a first sub-crucible and a second sub-crucible located at inner side of the first sub-crucible; a draft tube located above the crucible; and a delivery duct supplying materials to the crucible. A ratio of inner diameter of the second sub-crucible to outer diameter of the draft tube is ?1.05. In a first state, a distance between bottom surface of the draft tube and bottom surface of the crucible is a first distance, in a second state, a distance between bottom surface of the draft tube and bottom surface of the crucible is a second distance. The first distance is greater than the second distance. In the first and second states, a distance between a crystal-liquid interface in the crucible and the bottom surface of the draft tube remains substantially unchanged.
    Type: Grant
    Filed: September 30, 2020
    Date of Patent: August 29, 2023
    Assignees: Jinko Green Energy (Shanghai) Management Co., LTD, JINKO SOLAR CO., LTD.
    Inventors: Jun Yang, Weize Shang, Xiaolong Bai
  • Patent number: 11655557
    Abstract: The present disclosure provides a method for crystal growth. The method may include at one of the following operations: weighing reactants for growing an oxide crystal after a first preprocessing operation is performed on the reactants; placing the reactants, on which a second preprocessing operation has been performed, into a crystal growth device after an assembly preprocessing operation is performed on at least one component of the crystal growth device, wherein the at least one component of the crystal growth device includes a crucible, the assembly preprocessing operation includes at least one of a coating operation, an acid soaking and cleaning operation, or an impurity cleaning operation; introducing a protective gas into the crystal growth device after sealing the crystal growth device; activating the crystal growth apparatus to execute the crystal growth; and adding reactant supplements into the crystal growth device in real-time during the crystal growth.
    Type: Grant
    Filed: March 29, 2021
    Date of Patent: May 23, 2023
    Assignee: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
    Inventors: Yu Wang, Weiming Guan, Zhenxing Liang, Min Li
  • Patent number: 11629057
    Abstract: A method of a growing an embedded single crystal diamond structure, comprising: disposing a single crystal diamond on a non-diamond substrate, wherein the non-diamond substrate is larger than the single crystal diamond; masking a top portion of the single crystal diamond using a masking material; and using a chemical vapor deposition (CVD) growth chamber, growing polycrystalline diamond material surrounding the single crystal diamond in order to join the single crystal diamond to the polycrystalline diamond material.
    Type: Grant
    Filed: November 2, 2018
    Date of Patent: April 18, 2023
    Assignee: IIA TECHNOLOGIES PTE. LTD.
    Inventor: Devi Shanker Misra
  • Patent number: 11598019
    Abstract: A crucible-supporting pedestal includes a fitting recess portion into which a divided graphite member is fittable. An opening edge of the fitting recess portion is formed such that a contact area between the opening edge and the divided graphite member is provided at a position higher than a surface of a solidified product of a silicon melt which remains in a quartz crucible after a silicon single crystal is grown, and a force, which is applied to the divided graphite member by an expansion of the silicon melt when the silicon melt is solidified, is applied to a position lower than the contact area.
    Type: Grant
    Filed: May 31, 2018
    Date of Patent: March 7, 2023
    Assignee: SUMCO CORPORATION
    Inventor: Kenji Munezane
  • Patent number: 11478799
    Abstract: The present invention provides microfabricated substrates and methods of conducting reactions within these substrates. The reactions occur in plugs transported in the flow of a carrier-fluid.
    Type: Grant
    Filed: March 20, 2018
    Date of Patent: October 25, 2022
    Assignee: The University of Chicago
    Inventors: Rustem F. Ismagilov, Joshua David Tice, Cory John Gerdts, Bo Zheng
  • Patent number: 11479874
    Abstract: The invention provides a semiconductor crystal growth device comprising a furnace body; a crucible; a pulling device; a horizontal magnetic field applying device; and a deflector, being barrel-shaped and disposed above the silicon melt in the furnace body in a vertical direction, and the pulling device pulls the silicon ingot through the deflector in the vertical direction; wherein the bottom of the deflector has different thermal reflection coefficients at different positions, and the thermal reflection coefficient of the bottom of the deflector in the direction of the horizontal magnetic field is smaller than that in the direction perpendicular to the horizontal magnetic field. According to the semiconductor crystal growth device of the present invention, the temperature distribution inside the melt silicon and quality of the semiconductor crystal are improved.
    Type: Grant
    Filed: June 18, 2020
    Date of Patent: October 25, 2022
    Assignee: Zing Semiconductor Corporation
    Inventors: Weimin Shen, Gang Wang, Xianliang Deng, Hanyi Huang, Wee Teck Tan
  • Patent number: 11473209
    Abstract: In an exemplary embodiment, a quartz glass crucible 1 includes: a cylindrical crucible body 10 which has a bottom and is made of quartz glass; and crystallization-accelerator-containing coating films 13A and 13B which are formed on surfaces of the crucible body 10 so as to cause crystallization-accelerator-enriched layers to be formed in the vicinity of the surfaces of the crucible body 10 by heating during a step of pulling up a silicon single crystal by a Czochralski method. The quartz glass crucible is capable of withstanding a single crystal pull-up step undertaken for a very long period of time, such as multi-pulling, and a manufacturing method thereof.
    Type: Grant
    Filed: April 2, 2018
    Date of Patent: October 18, 2022
    Assignee: SUMCO CORPORATION
    Inventors: Hiroshi Kishi, Kouta Hasebe, Takahiro Abe, Hideki Fujiwara, Eriko Kitahara
  • Patent number: 11466381
    Abstract: A quartz glass crucible 1 includes: a quartz glass crucible body 10 having a cylindrical side wall portion 10a, a curved bottom portion 10b, and a corner portion 10c which has a larger curvature than that of the bottom portion 10b and connects the side wall portion 10a and the bottom portion 10b to each other; and an inner-surface coating film 13A which contains a crystallization accelerator and is formed on an inner surface 10i of the quartz glass crucible body 10, in which the inner surface 10i of the quartz glass crucible body 10 is under compressive stress. The quartz glass crucible has high durability even at a high temperature during a single crystal pull-up step and is capable of reducing a generation ratio of pinholes in a silicon single crystal.
    Type: Grant
    Filed: February 13, 2019
    Date of Patent: October 11, 2022
    Assignee: SUMCO CORPORATION
    Inventors: Hiroshi Kishi, Kouta Hasebe, Takahiro Abe, Hideki Fujiwara
  • Patent number: 11441235
    Abstract: A crystal growing apparatus includes: a crucible including a main body portion and a low radiation portion having a radiation rate lower than that of the main body portion; and a heating unit which is positioned on the outside of the crucible and is configured to heat the crucible by radiant heat, and the low radiation portion is provided on an outer surface of a first point which is a heating center, in a case where the crucible does not include the low radiation portion.
    Type: Grant
    Filed: December 4, 2019
    Date of Patent: September 13, 2022
    Assignee: SHOWA DENKO K.K.
    Inventors: Rimpei Kindaichi, Yoshishige Okuno, Tomohiro Shonai
  • Patent number: 11427927
    Abstract: A SiC single crystal manufacturing apparatus of the present invention includes a growth container having a growth space in which a SiC single crystal is grown in a first direction and a heat insulating material which covers the growth container and includes a plurality of units, and the plurality of units include a first unit and a second unit having at least a thermal conductivity different from that of the first unit, and the first unit includes a container made of at least one of graphite and a metal carbide and a filler filled into the container in a replaceable manner.
    Type: Grant
    Filed: December 12, 2019
    Date of Patent: August 30, 2022
    Assignee: SHOWA DENKO K.K.
    Inventor: Yohei Fujikawa
  • Patent number: 11413614
    Abstract: The present invention provides microfabricated substrates and methods of conducting reactions within these substrates. The reactions occur in plugs transported in the flow of a carrier-fluid.
    Type: Grant
    Filed: March 31, 2016
    Date of Patent: August 16, 2022
    Assignee: The University of Chicago
    Inventors: Rustem F. Ismagilov, Joshua David Tice, Cory John Gerdts, Bo Zheng
  • Patent number: 11413615
    Abstract: The present invention provides microfabricated substrates and methods of conducting reactions within these substrates. The reactions occur in plugs transported in the flow of a carrier-fluid.
    Type: Grant
    Filed: March 20, 2018
    Date of Patent: August 16, 2022
    Assignee: The University of Chicago
    Inventors: Rustem F. Ismagilov, Joshua David Tice, Cory John Gerdts, Bo Zheng
  • Patent number: 11384451
    Abstract: The invention relates to a crucible for crystal growth and a method for releasing thermal stress of silicon carbide crystals. The crucible is a crucible in contact with the side surface of the prepared crystals, and the crucible has an annular non-closed splicing structure. The crucible for the crystal growth has the annular non-closed splicing structure, so that the crystals can be prevented from being hooped, hot stress concentrated in the crystals in the growth process of the crystals can be effectively released, the fracturing rate of the crystals can be reduced, and the finished product rate of the crystals can be increased.
    Type: Grant
    Filed: January 9, 2019
    Date of Patent: July 12, 2022
    Assignee: ANHUI WEIXIN CHANGJIANG SEMICONDUCTOR MATERIAL CO., LTD.
    Inventors: Pan Gao, Jun Xin, Haikuan Kong, Xuechao Liu, Yanqing Zheng, Erwei Shi
  • Patent number: 11371160
    Abstract: A seed crystal holder for pulling up a single crystal is made of a carbon fiber-reinforced carbon composite material, and has a substantially cylindrical shape with a hollow space having a shape matching an outer shape of a substantially rod-shaped seed crystal. A direction of carbon fibers at a part in contact with at least an outer peripheral surface of the seed crystal has isotropy as viewed from a central axis of the hollow space.
    Type: Grant
    Filed: September 30, 2020
    Date of Patent: June 28, 2022
    Assignee: SUMCO CORPORATION
    Inventor: Eiichi Kawasaki
  • Patent number: 11332822
    Abstract: An exemplary method of depositing a layer of a material on an interior substrate surface of a complex geometry component includes the steps of providing the complex geometry component having an aperture defining an edge of the interior substrate surface of the complex geometry component, at least a portion of the interior substrate surface defining a first area not visible from the aperture, providing a heating element adjacent to the first area of the complex geometry component, energizing the heating element to raise a surface temperature of the first area and establish a thermal gradient between the first area and an adjacent area, and providing a vapor deposition apparatus configured to deposit the layer of material on the interior substrate surface corresponding to the first area of the complex geometry component.
    Type: Grant
    Filed: October 25, 2019
    Date of Patent: May 17, 2022
    Assignee: GM Global Technology Operations LLC
    Inventors: Su Jung Han, Julie A. Swartz, Grant W. Brady
  • Patent number: 11278898
    Abstract: The present invention provides microfabricated substrates and methods of conducting reactions within these substrates. The reactions occur in plugs transported in the flow of a carrier-fluid.
    Type: Grant
    Filed: March 20, 2018
    Date of Patent: March 22, 2022
    Assignee: The University of Chicago
    Inventors: Rustem F. Ismagilov, Joshua David Tice, Cory John Gerdts, Bo Zheng
  • Patent number: 11242616
    Abstract: A silicon ingot has opposite ends. A specific resistance, measured along an axis between the opposite ends of the silicon ingot, has at least one point of inflection where a concavity of the specific resistance changes along the axis. According to another embodiment, a silicon ingot has a first ingot part and a second ingot part between opposite ends of the silicon ingot. The first ingot part has a different specific resistance than the second ingot part. In a region of the silicon ingot between the first and second ingot parts, the specific resistance has at least one point of inflection where a concavity of the specific resistance changes.
    Type: Grant
    Filed: April 13, 2018
    Date of Patent: February 8, 2022
    Assignee: Infineon Technologies AG
    Inventors: Nico Caspary, Hans-Joachim Schulze
  • Patent number: 11225716
    Abstract: Internally cooled multi-hole injectors to deliver process chemicals are provided. An internal channel in an injector for the delivery system delivers process chemicals, such as a gas precursor, to a reaction space or substrate within a process chamber through multiple holes formed by outlets. A cooling delivery path and a cooling return path for cooling chemicals are positioned adjacent the supply channel to cool the process chemicals internally within the injector. The cooling process can be controlled to achieve a target cooling level for the process chemicals within the channel. In operation, undesired deposits are reduced thereby extending the time between product maintenance cycles. Further, the delivery and return flow of the cooling chemicals helps to stimulate a more evenly distributed temperature for the supply channel. Still further, the disclosed embodiments can be used in high-temperature environments, such as above about 400 degrees Celsius.
    Type: Grant
    Filed: November 27, 2019
    Date of Patent: January 18, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Melvin Verbaas, Anthony Dip
  • Patent number: 11198948
    Abstract: The present invention relates to a temperature control device for growing a single crystal ingot capable of accurately measuring a temperature of a silicon melt and quickly controlling to a target temperature during an ingot growing process, and a temperature control method applied thereto.
    Type: Grant
    Filed: January 8, 2019
    Date of Patent: December 14, 2021
    Assignee: SK SILTRON CO., LTD.
    Inventors: Hyun Woo Park, Jung Ryul Kim
  • Patent number: 11024493
    Abstract: An analyzing device includes: a measurement data acquisition unit that acquires measurement data obtained by irradiating a plurality of irradiation positions on a sample with a laser beam and performing mass spectrometry on a sample component corresponding to each irradiation position; and an analysis unit that performs analysis of the measurement data by excluding a set of data corresponding to an excluded irradiation position among the plurality of irradiation positions each having a different irradiation portion from which a portion that has been already irradiated with the laser beam is excluded in an irradiation range irradiated when the laser beam is irradiated to each irradiation position.
    Type: Grant
    Filed: September 20, 2019
    Date of Patent: June 1, 2021
    Assignee: SHIMADZU CORPORATION
    Inventors: Takushi Yamamoto, Eiichi Matsuo
  • Patent number: 10964786
    Abstract: An InP substrate that is a group III-V compound semiconductor substrate includes particles of greater than or equal to 0.19 ?m in particle size at less than or equal to 0.22 particles/cm2 or particles of greater than or equal to 0.079 ?m in particle size at less than or equal to 20 particles/cm2 on the main surface. An epilayer-attached InP substrate that is an epilayer-attached group III-V compound semiconductor substrate includes the InP substrate mentioned above and an epitaxial layer disposed on the main surface of the InP substrate, and includes LPDs of greater than or equal to 0.24 ?m in circle-equivalent diameter at less than or equal to 10 defects/cm2 or LPDs of greater than or equal to 0.136 ?m in circle-equivalent diameter at less than or equal to 30 defects/cm2 on the main surface in a case where the epitaxial layer has a thickness of 0.3 ?m.
    Type: Grant
    Filed: May 1, 2018
    Date of Patent: March 30, 2021
    Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Shinya Fujiwara, Tomoaki Miyoshi
  • Patent number: 10916421
    Abstract: A method for manufacturing an epitaxial silicon wafer enables to lower carbon concentration in an epitaxial film. The method forming an epitaxial silicon wafer where an epitaxial film is formed on a silicon wafer in a reaction chamber including a wafer-holding susceptor that separates an upper and lower space communicating through a predetermined gap includes steps of forming a flow of a processing gas flowing laterally along an upper surface of the wafer in the upper space and a flow of a main purging gas flowing towards the susceptor upwardly in the lower space being formed simultaneously, setting a flow rate ratio of the main purging gas flow rate to the processing gas flow rate to be 1.0/100 to 1.5/100 where the processing gas flow rate is set as 100, and controlling a pressure in the upper space to be within an atmospheric pressure ±0.2 kPa at least.
    Type: Grant
    Filed: May 10, 2019
    Date of Patent: February 9, 2021
    Assignee: GLOBALWAFERS JAPAN CO., LTD.
    Inventors: Jun Yamamoto, Shinya Matsuda
  • Patent number: 10910475
    Abstract: A method of manufacturing a silicon wafer includes extracting an n-type silicon ingot over an extraction time period from a silicon melt comprising n-type dopants, adding p-type dopants to the silicon melt over at least part of the extraction time period, so as to compensate an n-type doping in the n-type silicon ingot by 20% to 80%, and slicing the silicon ingot.
    Type: Grant
    Filed: June 22, 2016
    Date of Patent: February 2, 2021
    Assignee: Infineon Technologies AG
    Inventors: Nico Caspary, Hans-Joachim Schulze
  • Patent number: 10870581
    Abstract: A reaction furnace for producing a polycrystalline silicon according to the present invention is designed so as to have an in-furnace reaction space in which a reaction space cross-sectional area ratio (S=[S0?SR]/SR) satisfies 2.5 or more, which is defined by an inner cross-sectional area (So) of a reaction furnace, which is perpendicular to a straight body portion of the reaction furnace, and a total sum (SR) of cross-sectional areas of polycrystalline silicon rods that are grown by precipitation of polycrystalline silicon, in a case where a diameter of the polycrystalline silicon rod is 140 mm or more. Such a reaction furnace has a sufficient in-furnace reaction space even when the diameter of the polycrystalline silicon rod has been expanded, and accordingly an appropriate circulation of a gas in the reaction furnace is kept.
    Type: Grant
    Filed: April 10, 2020
    Date of Patent: December 22, 2020
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Shigeyoshi Netsu, Naruhiro Hoshino, Tetsuro Okada, Hiroshi Saito
  • Patent number: 10822717
    Abstract: A seed crystal holder for pulling up a single crystal is made of a carbon fiber-reinforced carbon composite material, and has a substantially cylindrical shape with a hollow space having a shape matching an outer shape of a substantially rod-shaped seed crystal. A direction of carbon fibers at a part in contact with at least an outer peripheral surface of the seed crystal has isotropy as viewed from a central axis of the hollow space.
    Type: Grant
    Filed: July 3, 2019
    Date of Patent: November 3, 2020
    Assignee: SUMCO CORPORATION
    Inventor: Eiichi Kawasaki
  • Patent number: 10759188
    Abstract: A surface treatment system includes a holder configured to secure an object within the holder and a plurality of surface treatment devices. Each surface treatment device is configured to treat a surface of the object within the holder differently than each of the other surface treatment devices in the plurality of surface treatment devices. A controller is configured to operate the surface treatment devices independently of one another so less than all of the devices can be operated to treat an object surface. Thus, the surface treatment system is capable of treating a wide range of materials for printing by a direct-to-object printer.
    Type: Grant
    Filed: April 24, 2017
    Date of Patent: September 1, 2020
    Assignee: Xerox Corporation
    Inventors: Jack T. LeStrange, Anthony S. Condello, Mandakini Kanungo, Peter J. Knausdorf
  • Patent number: 10724148
    Abstract: A method of Czochralski growth of a silicon ingot includes melting a mixture of silicon material and an n-type dopant material in a crucible. The silicon ingot is extracted from the molten silicon over an extraction time period. Boron is added to the molten silicon over at least part of the extraction time period.
    Type: Grant
    Filed: January 21, 2014
    Date of Patent: July 28, 2020
    Assignee: Infineon Technologies AG
    Inventors: Nico Caspary, Hans-Joachim Schulze
  • Patent number: 10697086
    Abstract: In forming of a silicon carbide layer, when an X axis indicates a first value representing, in percentage, a value obtained by dividing a flow rate of silane by a flow rate of hydrogen and a Y axis indicates a second value representing a flow rate of ammonia in sccm, the first value and the second value fall within a quadrangular region surrounded by first coordinates, second coordinates, third coordinates, and fourth coordinates in XY plane coordinates. The first coordinates are (0.05, 6.5×10?4). The second coordinates are (0.05, 4.5×10?3). The third coordinates are (0.22, 1.2×10?2). The fourth coordinates are (0.22, 1.3×10?1). After the forming of the silicon carbide layer, an average value of carrier concentration of the silicon carbide layer is more than or equal to 1×1015 cm?3 and less than or equal to 2×1016 cm?3.
    Type: Grant
    Filed: August 2, 2016
    Date of Patent: June 30, 2020
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Keiji Wada, Hideyuki Doi, Hironori Itoh
  • Patent number: 10586711
    Abstract: A substrate processing method of processing a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, the substrate processing method includes: a block copolymer coating step of applying the block copolymer onto the substrate on which a predetermined projecting and recessed pattern is formed, to form a coating film of the block copolymer; a polymer separation step of phase-separating the block copolymer into the hydrophilic polymer and the hydrophobic polymer; a polymer removal step of selectively removing the hydrophilic polymer from the phase-separated block copolymer; and after the block copolymer coating step and before the polymer removal step, a film thickness reduction step of reducing a film thickness of the coating film of the block copolymer.
    Type: Grant
    Filed: October 20, 2016
    Date of Patent: March 10, 2020
    Assignee: Tokyo Electron Limited
    Inventors: Makoto Muramatsu, Tadatoshi Tomita, Hisashi Genjima, Takahiro Kitano
  • Patent number: 10552936
    Abstract: The present invention facilitates efficient and effective information storage device operations. In one embodiment, an add-in card for image processing selectively storing information includes a processing component that performs image processing locally on the add-in card and also directs selective image based storage of original image information and results of the image processing using a unique tag; a solid state storage device that selectively stores the original image information and results of the image processing, and a communication port that receives the original image information and selectively forwards the original image information and results of image processing on the original image information.
    Type: Grant
    Filed: March 2, 2016
    Date of Patent: February 4, 2020
    Assignee: Alibaba Group Holding Limited
    Inventor: Shu Li
  • Patent number: 10433088
    Abstract: Provided is a PCB speaker and a method for micromachining the speaker diaphragm on PCB substrate, the method for micromachining the speaker diaphragm on PCB substrate comprises: providing metal paths and at least one through hole on the PCB substrate; providing a patterned sacrificial layer on the PCB substrate, the sacrificial layer covering all the through holes on the PCB substrate; providing a diaphragm layer on the sacrificial layer through depositing, mounting or laminating, the diaphragm layer covering the sacrificial layer and electrically connected with the metal paths on the PCB substrate, thereby forming a diaphragm layer; and releasing the sacrificial layer and the diaphragm layer remains. With the micromachining method for the above PCB substrate and the diaphragm, the production cost of the speaker can be lowered, and the reliability of the product can be improved at the same time.
    Type: Grant
    Filed: August 26, 2014
    Date of Patent: October 1, 2019
    Assignee: GOERTEK INC.
    Inventor: Quanbo Zou
  • Patent number: 10385473
    Abstract: A seed crystal holder for pulling up a single crystal is made of a carbon fiber-reinforced carbon composite material, and has a substantially cylindrical shape with a hollow space having a shape matching an outer shape of a substantially rod-shaped seed crystal. A direction of carbon fibers at a part in contact with at least an outer peripheral surface of the seed crystal has isotropy as viewed from a central axis of the hollow space.
    Type: Grant
    Filed: February 18, 2016
    Date of Patent: August 20, 2019
    Assignee: SUMCO CORPORATION
    Inventor: Eiichi Kawasaki
  • Patent number: 10385443
    Abstract: A device for growing large-sized monocrystalline crystals, including a crucible adapted to grow crystals from a material source and with a seed crystal and including therein a seed crystal region, a growth chamber, and a material source region; a thermally insulating material disposed outside the crucible and below a heat dissipation component; and a plurality of heating components disposed outside the thermally insulating material to provide heat sources, wherein the heat dissipation component is of a heat dissipation inner diameter and a heat dissipation height which exceeds a thickness of the thermally insulating material.
    Type: Grant
    Filed: November 16, 2016
    Date of Patent: August 20, 2019
    Assignee: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Dai-Liang Ma, Hsueh-I Chen, Bo-Cheng Lin, Cheng-Jung Ko, Ying-Cong Zhao, Chih-Wei Kuo, Shu-Yu Yeh
  • Patent number: 10343922
    Abstract: A plate-shaped sample with a cross-section perpendicular to a radial direction of a polycrystalline silicon rod as a principal surface is sampled from a region from a center (r=0) of the polycrystalline silicon rod to R/3. Then, the sample is disposed at a position at which a Bragg reflection from a (111) Miller index plane is detected. In-plane rotation with a rotational angle ? on the sample is performed with a center of the sample as a rotational center such that an X-ray irradiation region defined by a slit performs ?-scanning on the principal surface of the sample to obtain a diffraction chart indicating dependency of a Bragg reflection intensity from the (111) Miller index plane on a rotational angle of the sample. A ratio (Sp/St) between an area Sp of a peak part appearing in the diffraction chart and a total area St of the diffraction chart is calculated.
    Type: Grant
    Filed: December 10, 2015
    Date of Patent: July 9, 2019
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Shuichi Miyao, Shigeyoshi Netsu
  • Patent number: 10337117
    Abstract: A method of Czochralski growth of a silicon ingot includes melting a mixture of silicon material and an n-type dopant material in a crucible. The silicon ingot is extracted from the molten silicon during an extraction time period. The silicon ingot is doped with additional n-type dopant material during at least one sub-period of the extraction time period.
    Type: Grant
    Filed: November 7, 2014
    Date of Patent: July 2, 2019
    Assignee: Infineon Technologies AG
    Inventors: Nico Caspary, Hans-Joachim Schulze
  • Patent number: 10329687
    Abstract: To reduce ungrown region or abnormal grain growth region in growing a Group III nitride semiconductor through a flux method. A seed substrate has a structure in which a Group III nitride semiconductor layer is formed on a ground substrate as a base, and a mask is formed on the Group III nitride semiconductor layer. The mask has a plurality of dotted windows in an equilateral triangular lattice pattern. A Group III nitride semiconductor is grown through flux method on the seed substrate. Carbon is placed on a lid of a crucible holing the seed substrate and a molten mixture so that carbon is not contact with the molten mixture at the start of crystal growth. Thereby, carbon is gradually added to the molten mixture as time passes. Thus, ungrown region or abnormal grain growth region is reduced in the Group III nitride semiconductor crystal grown on the seed substrate.
    Type: Grant
    Filed: September 6, 2017
    Date of Patent: June 25, 2019
    Assignee: TOYODA GOSEI CO., LTD.
    Inventors: Miki Moriyama, Shiro Yamazaki, Yasuhide Yakushi
  • Patent number: 10309902
    Abstract: A method for quantifying crystallinity within a sample using second harmonic generation microscopy is described herein. In one aspect, a method for reducing the timeframe for accelerated stability testing of amorphous solid dispersions of active pharmaceutical ingredients though identifying regions of interest to quantify crystallinity and composition is presented herein.
    Type: Grant
    Filed: September 28, 2015
    Date of Patent: June 4, 2019
    Assignee: PURDUE RESEARCH FOUNDATION
    Inventors: Garth Jason Simpson, Paul David Schmitt
  • Patent number: 10287706
    Abstract: The present invention relates to an ingot growing device for growing a single crystal silicon ingot. According to one embodiment of the present invention, the ingot growing device comprises: a growing chamber having an inner space; a growing container located in the inner space and having a silicon solution accommodated therein; a heating unit encompassing the growing container and located thereat, and generating heat; and a susceptor for supporting the growing container, wherein the heating unit comprises: a first ring heater having a ring shape; a second ring heater having a ring shape and located at the lower part of the first ring heater; a first coupling part for coupling the first ring heater and the second ring heater; and a first ring support unit located between the first ring heater and the second ring heater and supporting the first ring heater.
    Type: Grant
    Filed: November 30, 2017
    Date of Patent: May 14, 2019
    Assignee: WOONGJIN ENERGY CO., LTD.
    Inventors: Sung Sun Baik, Il Sun Pang, Kwang Hun Kim
  • Patent number: 10175246
    Abstract: A method of detecting a target within a population of molecules comprising: contacting a plurality of labeled probe molecules with the population of molecules potentially containing a target of the probe molecules; acquiring a probe specific signal emitted by said labeled probe molecules that bound to said target together with a background signal; preferentially modulating said probe specific signal by at least one of modulating said acquisition and modulating an emission of said probe specific signal; and detecting said probe specific signal over said background signal using said preferential modulation.
    Type: Grant
    Filed: January 31, 2017
    Date of Patent: January 8, 2019
    Assignee: Ramot at Tel-Aviv University Ltd.
    Inventors: Ady Arie, Amos Danielli
  • Patent number: 10145023
    Abstract: Production of silicon ingots in a crystal puller that involve reduction in the formation of silicon deposits on the puller exhaust system are disclosed.
    Type: Grant
    Filed: July 17, 2015
    Date of Patent: December 4, 2018
    Assignee: Corner Star Limited
    Inventors: Tirumani N. Swaminathan, Jihong Chen
  • Patent number: 10125431
    Abstract: In accordance with the present invention, taught is a high purity germanium crystal growth method utilizing a quartz shield inside a steel furnace. The quartz shield is adapted for not only guiding the flow of an inert gas but also preventing the germanium melt from contamination by insulation materials, graphite crucible, induction coil and stainless steel chamber. A load cell provides automatic control of crystal diameter and helps to ensure exhaustion of the germanium melt. The method is both convenient and effective at producing high purity germanium crystals by relatively low skilled operators.
    Type: Grant
    Filed: June 20, 2014
    Date of Patent: November 13, 2018
    Assignee: South Dakota Board of Regents
    Inventors: Guojian Wang, Dongming Mei
  • Patent number: 10100430
    Abstract: A method for growing a silicon single crystal by a Czochralski method, includes: conducting preliminary examination of growth conditions under which crystal collapse does not occur, the preliminary examination being based on a correlation between presence or absence of the crystal collapse in the silicon single crystal and a position at which an internal stress in the crystal when the silicon single crystal is grown will exceed a prescribed threshold, the position being away from a crystal growth interface; and growing the silicon single crystal in accordance with the growth conditions under which the crystal collapse does not occur, the growth conditions being determined from the preliminary examination. The method can grow a silicon single crystal while crystal collapse is effectively prevented.
    Type: Grant
    Filed: August 5, 2013
    Date of Patent: October 16, 2018
    Assignee: SHIN-ETSU HANDOTAI CO., LTD.
    Inventors: Ryoji Hoshi, Masanori Takazawa
  • Patent number: 10100428
    Abstract: Production of silicon ingots in a crystal puller that involve reduction of the erosion rate at the crucible contact point are disclosed.
    Type: Grant
    Filed: July 17, 2015
    Date of Patent: October 16, 2018
    Assignee: Corner Star Limited
    Inventors: Jihong Chen, Tirumani N. Swaminathan
  • Patent number: 10072333
    Abstract: A method of coating a plurality of sheets. A fluid is forced through gaps in the plurality of sheets. The fluid has a substantially plug flow profile and the fluid deposits a coating on at least one surface of the plurality of sheets in a self-limiting deposition process.
    Type: Grant
    Filed: July 16, 2014
    Date of Patent: September 11, 2018
    Assignee: 3M INNOVATIVE PROPERTIES COMPANY
    Inventors: Andrew J. Ouderkirk, Nicholas T. Gabriel, Max Powers, Bill H. Dodge, Timothy J. Nevitt, Daniel J. Schmidt, James R. Miller, Robert R. Kieschke, Erin A. McDowell, Kelly S. Johnson
  • Patent number: 9938634
    Abstract: A method of producing a phosphorus-doped silicon single crystal, including pulling the phosphorus-doped silicon single crystal from a silicon melt doped with phosphorus by Magnetic field applied Czochralski (MCZ) method, wherein the phosphorus is doped such that a phosphorus concentration of the phosphorus-doped silicon single crystal is 2×1016 atoms/cm3 or more, and a horizontal magnetic field is applied to the silicon melt with a central magnetic field strength of 2,000 gauss or more such that the phosphorus-doped silicon single crystal to be produced has an oxygen concentration of 1.6×1018 atoms/cm3 (ASTM'79) or more. A method of producing a silicon single crystal that is heavily doped with phosphorus and has an oxygen concentration of 1.6×1018 atoms/cm3 (ASTM'79) or more.
    Type: Grant
    Filed: May 8, 2014
    Date of Patent: April 10, 2018
    Assignee: SHIN-ETSU HANDOTAI CO., LTD.
    Inventors: Masahiro Sakurada, Junya Tokue, Ryoji Hoshi, Izumi Fusegawa
  • Patent number: 9869020
    Abstract: An apparatus and method for protecting a target pump interior, where a target pump (10) inlet is provided with an inlet manifold (20) and a target pump outlet with an exhaust manifold (30). The target pump interior is exposed to sequential self-saturating surface reactions by sequential inlet of reactive gases according to an ALD method via the inlet manifold into the target pump interior and outlet of reaction residue via the exhaust manifold, while the target pump is kept running or not running. A technical effect of the invention is protecting a pump interior, which can be also an assembled pump interior, by a conformal protective coating.
    Type: Grant
    Filed: April 10, 2013
    Date of Patent: January 16, 2018
    Assignee: Picosun Oy
    Inventors: Timo Malinen, Harri Vähämäki
  • Patent number: 9863059
    Abstract: A method for pulling silicon single crystal includes a process of placing a molded body between a susceptor's inner surface and a crucible's outer surface. The molded body is formed based on three-dimensional data of the inner surface shape of the susceptor which can hold the vitreous silica crucible and three-dimensional data of the crucible so as to make the susceptor's central axis and the crucible's central axis substantially aligned when it is placed between the susceptor's inner surface and the crucible's outer surface.
    Type: Grant
    Filed: June 29, 2013
    Date of Patent: January 9, 2018
    Assignee: SUMCO CORPORATION
    Inventors: Toshiaki Sudo, Tadahiro Sato, Ken Kitahara, Eriko Kitahara