Abstract: A crystal pattern forming method includes: an electromagnetic wave absorbing layer forming process for forming an electromagnetic wave absorbing layer on one of surfaces of a substrate; an amorphous film forming process for forming an amorphous film on the electromagnetic wave absorbing layer; a mask forming process for forming an electromagnetic wave blocking mask for blocking an electromagnetic wave on the other one of the surfaces of the substrate; and a crystallizing process for causing the substrate to be irradiated with the electromagnetic wave from the other one of the surfaces of the substrate through the electromagnetic wave blocking mask to crystallize a given region in the amorphous film. In the mask forming process, a recessed structure is formed on the other one of the surfaces of the substrate, by selectively removing the other one of the surfaces of the substrate to form a recessed portion.

Abstract: Methods for forming nanostructures of various shapes are disclosed. Nanocubes, nanowires, nanopyramids and multiply twinned particles of silver may by formed by combining a solution of silver nitrate in ethylene glycol with a solution of poly(vinyl pyrrolidone) in ethylene glycol. Hollow nanostructures may be formed by reacting a solution of solid nanostructures comprising one of a first metal and a first metal alloy with a metal salt that can be reduced by the first metal or first metal alloy. Nanostructures comprising a core with at least one nanoshell may be formed by plating a nanostructure and reacting the plating with a metal salt.

Abstract: A method of fabricating a hybrid orientation substrate is described. A silicon substrate with a first orientation having a silicon layer with a second orientation directly thereon is provided, and then a stress layer is formed on the silicon layer. A trench is formed between a first portion and a second portion of the silicon layer through the stress layer and into the substrate. The first portion of the silicon layer is amorphized. A SPE process is performed to recrystallize the amorphized first portion of the silicon layer to be a recrystallized layer with the first orientation. An annealing process is performed at a temperature lower than 1200° C. to convert a surface layer of the second portion of the silicon layer to a strained layer. The trench is filled with an insulating material after the SPE process or the annealing process, and the stress layer is removed.

Abstract: A PIN-PMN-PT ferroelectric single crystal and a method of manufacture are disclosed. The PIN-PMN-PT ferroelectric single crystal is oriented and polarized along a single crystallographic direction. The PIN-PMN-PT ferroelectric single crystal ferroelectric has increased remnant polarization.

Abstract: Processes of forming an irreversibly loose packed structure of particulate material useful as a photonic or phononic crystal are provided. Matrix material is infilled between particles and extends above the particles to form a particulate free matrix layer. Removing the matrix layer causes deformation of or exposes the spacing between the particles. The spaces are infilled by additional matrix material that when cured produces a supported and irreversibly loose packed crystalline structure of particles producing differing bandgaps and transmissive properties relative to the original structure. The processes provided allow for economical tuning of the transmissive properties of photonic or phononic crystals.

Abstract: Each region, which should be left on a substrate after patterning, of a semiconductor film is grasped in accordance with a mask. Then, each region to be scanned with laser light is determined so that at least the region to be obtained through the patterning is crystallized, and a beam spot is made to hit the region to be scanned, thereby partially crystallizing the semiconductor film. Each portion with low output energy of the beam spot is shielded by a slit. In the present invention, the laser light is not scanned and irradiated onto the entire surface of the semiconductor film but is scanned such that at least each indispensable portion is crystallized to a minimum. With the construction described above, it becomes possible to save time taken to irradiate the laser light onto each portion to be removed through the patterning after the crystallization of the semiconductor film.

Abstract: A method and system for processing at least one portion of a thin film sample on a substrate, with such portion of the film sample having a first boundary and a second boundary. One or more first areas of the film sample are successively irradiated by first beamlets of an irradiation beam pulse so that the first areas are melted throughout their thickness and allowed to re-solidify and crystallize thereby having grains grown therein. Thereafter, one or more second areas of the film sample are irradiated by second beamlets so that the second areas are melted throughout their thickness. At least two of the second areas partially overlap a particular area of the re-solidified and crystallized first areas such that the grains provided in the particular area grow into each of the at least two second areas upon re-solidification thereof.

Abstract: A system for preparing a semiconductor film, the system including: a laser source; optics to form a line beam, a stage to support a sample capable of translation; memory for storing a set of instructions, the instructions including irradiating a first region of the film with a first laser pulse to form a first molten zone, said first molten zone having a maximum width (Wmax) and a minimum width (Wmin), wherein the first molten zone crystallizes to form laterally grown crystals; laterally moving the film in the direction of lateral growth a distance greater than about one-half Wmax and less than Wmin; and irradiating a second region of the film with a second laser pulse to form a second molten zone, wherein the second molten zone crystallizes to form laterally grown crystals that are elongations of the crystals in the first region, wherein laser optics provide Wmax less than 2×Wmin.

Abstract: A method for forming colloidal photonic crystals comprises; surrounding an outer circumference of a cylinder with a flexible substrate, spacing the cylinder a predetermined distance from a panel coated with a colloidal solution, and rotating the cylinder to form colloidal photonic crystals on the flexible panel.

Abstract: A wafer structure and epitaxial growth method for growing the same. The method may include forming a mask layer having nano-sized areas on a wafer, forming a porous layer having nano-sized pores on a surface of the wafer by etching the mask layer and a surface of the wafer, and forming an epitaxial material layer on the porous layer using an epitaxial growth process.

Abstract: A polycrystalline film is prepared by (a) providing a substrate having a thin film disposed thereon, said film capable of laser-induced melting, (b) generating a sequence of laser pulses having a fluence that is sufficient to melt the film throughout its thickness in an irradiated region, each pulse forming a line beam having a predetermined length and width, said width sufficient to prevent nucleation of solids in a portion of the thin film that is irradiated by the laser pulse, (c) irradiating a first region of the film with a first laser pulse to form a first molten zone, said first molten zone demonstrating a variation in width along its length to thereby define a maximum width (Wmax) and a minimum width (Wmin), wherein the first molten zone crystallizes upon cooling to form one or more laterally grown crystals, (d) laterally moving the film in the direction of lateral growth a distance that is greater than about one-half Wmax and less than Wmin; and (e) irradiating a second region of the film with a seco

Abstract: Polycrystalline alumina (PCA) that has been doped with magnesium oxide is converted to sapphire by additionally doping the PCA with boron oxide and sintering to induce abnormal grain growth. The boron oxide may be added to an already formed green PCA ceramic shape by applying an aqueous boric acid solution to the green ceramic and heating the green ceramic in air to convert the boric acid to boron oxide.

Abstract: There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film.

Abstract: A phase modulation element according to the present invention has a first area having a first phase value based on a phase modulation unit having a predetermined size and a second area having a second phase value based on the phase modulation unit having the predetermined size, and each phase distribution is defined by a change in area shares of the first area and the second area depending on each position.

Abstract: The invention relates to a method for producing a strained layer. Said method comprises the following steps: placing the layer on a substrate and straining it, structuring the strained layer, relaxing the layer, producing directional off-sets in the layer to be strained. A layered structure produced in this manner has triaxially strained layers.

Abstract: A surface modified quartz glass crucible and a process for modifying the crucible includes a layer of a metal oxide on the whole or a part of the inside and/or outside of the crucible, and baking it. At least an inside surface of the crucible is coated with a said metal oxide of magnesium, calcium, strontium or barium. The coated layer of the crucible does not abrade easily and provides a high dislocation free ratio of silicon single crystals pulled by using the crucible.

Abstract: The invention relates to a method for forming a thin film of molecular organic semiconductor material (OSCM), said film being intended to be integrated into a device for applications in electronics or optoelectronics, which includes the following steps: step (c) of supplying a defined quantity of the molecular OSCM in the form of a melt to the surface of a substrate so as to form a thin film; and a step (d) of cooling according to a defined temperature profile in order to solidify the thin film, characterized in that the temperature of the substrate surface is equal to or above the melting point of the molecular OSCM at the moment of implementing step (a) and in that the temperature profile of step (b) comprises: a first part corresponding to a sufficiently slow controlled cooling of the molecular OSCM down to a temperature close to the crystallization temperature of the molecular OSCM, so as to cause only a single seed to appear in the thin film in melt form; and a second part corresponding to controlled coo

Abstract: A method of fabricating silicon parts are provided herein. The method includes growing a silicon sample, machining the sample to form a part, and annealing the part by exposing the part sequentially to one or more gases. Process conditions during silicon growth and post-machining anneal are designed to provide silicon parts that are particularly suited for use in corrosive environments.

Abstract: An apparatus for growing a synthetic diamond comprises a growth chamber, at least one manifold allowing access to the growth chamber, and a plurality of safety clamps positioned on opposite sides of the growth chamber; wherein the growth chamber and the plurality of safety clamps are comprised of a material having a tensile strength of about 120,000-200,000 psi, a yield strength of about 100,000-160,000 psi, an elongation of about 10-20%, an area reduction of about 40-50%, an impact strength of about 30-40 ft-lbs, and a hardness greater than 320 BHN.

Abstract: A crystallization method, includes: forming an amorphous silicon layer on a substrate; forming a first crystallization region by irradiating the amorphous silicon layer with a laser beam having a ramp shaped cross sectional profile that decreases in a scanning direction; and performing a second crystallization by moving a predetermined length in a scanning direction so as to be partially overlapped with the first crystallization region formed by the first crystallization.

Abstract: A method of manufacturing an orientation film which method is suitable for manufacturing an orientation film containing a ceramic at low cost. The method includes the steps of: (a) forming a ceramic film on a seed substrate in which crystal orientation is controlled at least on a surface thereof by using an aerosol deposition method of injecting powder toward a substrate and depositing the powder on the substrate; and (b) heat-treating the ceramic film formed at step (a) to form an orientation film in which crystal grains contained in the ceramic film is oriented.

Abstract: A crystallization method which generates a crystallized semiconductor film by irradiating at least one of a polycrystal semiconductor film and an amorphous semiconductor film with light beams having a light intensity distribution with an inverse peak pattern that a light intensity is increased toward the periphery from an inverse peak at which the light intensity is minimum, wherein a light intensity value ? (standardized value) in the inverse peak when a maximum value of the light intensity in the light intensity distribution with the inverse peak pattern is standardized as 1 is set to 0.2?value ??0.8.

Abstract: A method of forming a polycrystalline silicon layer includes: disposing a mask over the amorphous silicon layer, the mask having a plurality of transmissive regions, the plurality of transmissive regions being disposed in a stairstep arrangement spaced apart from each other in a first direction and a second direction substantially perpendicular from the first direction, each transmissive region having a central portion and first and second side portions that are adjacent to opposite ends of the central portion along the first direction, and wherein each of the portions has a length along the first direction and a width along the second direction, and wherein the width of first and second portions decreases away from the central portion along the first direction; irradiating a laser beam onto the amorphous silicon layer a first time through the mask to form a plurality of first irradiated regions corresponding to the plurality of transmissive regions, each first irradiated region having a central portion, and

Abstract: A method of making a rare earth halide single crystal material is provided. The method includes providing a polycrystalline material having a plurality of grains. The method further includes adding a seed crystal to the polycrystalline material to define a plane of growth for the polycrystalline material. Further, the polycrystalline material having the seed crystal may be subjected to heat-treating, where the heat-treating does not include melting the polycrystalline material.

Abstract: A method of manufacturing a ceramic film by using an AD method, by which a film having good crystallinity can be fabricated without using a high-temperature process. The method of manufacturing a ceramic film by using an aerosol including the steps of: (a) dispersing ceramic raw material powder containing an amorphous component in a gas to generate an aerosol; and (b) supplying the aerosol generated at step (a) into a chamber in which a substrate is placed and depositing the ceramic raw material powder on the substrate to form a ceramic film.

Abstract: A method of making a single crystal material is provided. The method includes providing a polycrystalline material having a plurality of grains. The method further includes adding a seed crystal to the polycrystalline material to define a plane of growth for the polycrystalline material. Further, the polycrystalline material having the seed crystal may be subjected to heat-treating, where the heat-treating does not include melting the polycrystalline material.

Abstract: A flux assisted solid phase epitaxy that can make a thin film having a crystalline perfection comparable with that of a bulk crystal and at a reduced cost is provided in which an amorphous film of a mixture of an objective substance to be grown epitaxially and a flux of a substance producing a eutectic with the objective substance but not producing any compound therewith is deposited on a substrate at a temperature less than a eutectic point of the substances, and the substrate is heat-treated at a temperature not less than the eutectic point of the objective and flux substances. A solid phase reaction, namely solid phase diffusion causes the objective and flux substances to be mixed together to form a liquid phase in their eutectic state from which the objective substance precipitates and epitaxially grows on the substrate.

Abstract: Concentration of metal element which promotes crystallization of silicon and which exists within a crystal silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is implemented after introducing nickel to an amorphous silicon film 103. Then, laser light is irradiated to diffuse the nickel element concentrated locally. After that, another heat treatment is implemented within an oxidizing atmosphere at a temperature higher than that of the previous heat treatment. A thermal oxide film 106 is formed in this step. At this time, the nickel element is gettered to the thermal oxide film 106. Then, the thermal oxide film 106 is removed. Thereby, a crystal silicon film 107 having low concentration of the metal element and a high crystallinity can be obtained.

Abstract: Method for crystallizing a melamine melt to form melamine particles with a D90 of at most 2 mm by cooling a melamine melt to below the crystallization temperature of the melamine, comprising the formation of a suspension of melamine particles in the cooling medium by spraying the melamine melt with at most 10 wt % of CO2 relative to the sprayed quantity of melamine melt in a space in which a layer of a liquid cooling medium is present that has a temperature below the crystallization temperature of the melamine and under cooling conditions at which at least 50 wt % of the sprayed melamine melt directly turns into suspended melamine particles. Method for the production of melamine from urea in a preferably continuous, high-pressure process, with application of the present method for the crystallization.

Abstract: The present invention provides a method for removing a metal element effectively from a crystalline semiconductor film obtained with the use of the metal element, without increasing the number of processes. In the present invention, an amorphous semiconductor film is formed on an insulating surface, a metal element for promoting crystallization is added to the amorphous semiconductor film, the amorphous semiconductor film is heated to form a crystallized semiconductor film, a continuous wave laser beam is irradiated to the crystallized semiconductor film, and an upper portion of the crystallized semiconductor film is removed.

Abstract: Disclosed are apparatus for forming a semiconductor film having an excellent crystallinity from a non-single crystal semiconducting layer formed on a base layer made of an insulating material. The apparatus includes a light source, a homogenizer for homogenizing an intensity distribution of the emitted light, an amplitude-modulation means for performing the amplitude-modulation such that the amplitude of the light, of which the intensity distribution is homogenized, is increased in the direction of the relative motion of the light to the base layer, an optional light projection optical system for projecting the amplitude-modulated light onto the surface of the non-single crystal semiconductor such that a predetermined irradiation energy can be obtained, a phase shifter for providing a low temperature point in the surface irradiated by the light, and a substrate stage to move the light relative to the substrate thereby enabling scanning in the X and Y axis.

Abstract: The present invention is directed to systems and methods for irradiating regions of a thin film sample(s) with laser beam pulses having different energy beam characteristics that are generated and delivered via different optical paths.

Abstract: A crystallization apparatus according to the present invention includes a first irradiation system which irradiates a predetermined area on a glass substrate having an irradiation target, i.e., an a-Si thin film with light beams having a substantially homogeneous light intensity distribution, and a second irradiation system which irradiates the predetermined area with light beams having a light intensity distribution with an inverse peak pattern that a light intensity is increased toward the periphery from an area in which the light intensity is minimum.

Abstract: Photonic crystal units (10a, 10b, and 10c) are formed by an optical molding process using a photocurable resin, and partitions (11) are provided at the boundaries therebetween. The voids in each photonic crystal unit are filled with a second substance containing ceramic particles dispersed therein to form a filled portion 2. A plurality of three-dimensional periodic structure units containing the first and second substances distributed with three-dimensional periodicity are arranged so as to have different ratios between the dielectric constants of the first and second substances. Therefore, present invention provides a three-dimensional periodic structure having a wide photonic band gap which could not be obtained in a conventional three-dimensional periodic structure.

Abstract: A method of forming a phosphorus- and/or boron-containing silica layer, such as a PSG, BSG, or BPSG layer, on a substrate, such as a semiconductor substrate or substrate assembly.

Abstract: A crystallization apparatus includes an illumination system which illuminates a phase shifter having a phase shift portion, and irradiates a polycrystal semiconductor film or an amorphous semiconductor film with a light beam having a predetermined light intensity distribution in which a light intensity is minimum in a point area corresponding to the phase shift portion of the phase shifter, thereby forming a crystallized semiconductor film, the phase shifter has four or more even-numbered phase shift lines which intersect at a point constituting the phase shift portion. An area on one side and an area on the other side of each phase shift line have a phase difference of approximately 180 degrees.

Abstract: A method of adjusting the in-plane lattice constant of a substrate and an in-plane lattice constant adjusted substrate are provided. A crystalline substrate (1) made of SrTiO3 is formed at a first preestablished temperature thereon with a first epitaxial thin film (2) made of a first material, e. g., BaTiO3, and then on the first epitaxial thin film (2) with a second epitaxial thin film (6) made of a second material, e. g., BaxSr1?xTiO3 (where 0<x<1), that contains a substance of the first material and another substance which together therewith is capable of forming a solid solution in a preestablished component ratio. Thereafter, the substrate is heat-treated at a second preselected temperature. Heat treated at the second preestablished temperature, the substrate has dislocations (4) introduced therein and the second epitaxial thin film (6) has its lattice constant relaxed to a value close to the lattice constant of bulk crystal of the second material.

Abstract: A crystallization tray includes a plurality of crystallization cells, each cell having a reservoir adapted to receive an equilibrating solution, a shelf located adjacent to the reservoir and adapted for use as a temporary cryogenic holding area for a crystallized substance and/or a sample holding area, and a sample drop receptacle carried by the shelf and adapted to receive a sample drop including a crystallizable substance. A related method for forming macromolecular crystals includes dispensing an equilibrating solution in the reservoirs, dispensing a plurality of macromolecular solution droplets in the sample drop receptacles, covering the cells with a cover; and crystallizing the crystallizable substance by vapor diffusion.

Abstract: The invention provides processes for producing a very low dislocation density in heterogeneous epitaxial layers with a wide range of thicknesses, including a thickness compatible with conventional silicon CMOS processing. In a process for reducing dislocation density in a semiconductor material formed as an epitaxial layer upon a dissimilar substrate material, the epitaxial layer and the substrate are heated at a heating temperature that is less than about a characteristic temperature of melting of the epitaxial layer but greater than about a temperature above which the epitaxial layer is characterized by plasticity, for a first time duration. Then the epitaxial layer and the substrate are cooled at a cooling temperature that is lower than the about the heating temperature, for a second time duration. These heating and cooling steps are carried out a selected number of cycles to reduce the dislocation density of the epitaxial layer.

Abstract: A method for etching the surface of a bioactive glass, in which the glass surface is contacted with an acid fluoride solution. The solution contains a complexing agent that forms a complex with ions dissolving from the bioactive glass.

Abstract: Amorphous or polycrystalline films have been recrystallized into single-crystal thin films (of micrometer thickness) by a zone melting technique, in which an electrically heated wire generated a narrow heated or molten zone (0.5-2 mm wide) on the substrate sandwiched between two pieces of glass or indium-tin-oxide-coated glass. The substrate can be either an organic or inorganic compound. When the molten zone was moved slowly (3-120 &mgr;m/min) across the layer from one end of the cell to the other, a single-crystal film was produced after a single pass. This technique allows for thin film purification and an improvement in electronic, optical, and optoelectronic properties of the thin film. After this treatment, the steady-state short-circuit photocurrent can be improved by several orders of magnitude. These films are useful in the fields of optics and electronics for improving the performance in devices such as thin-film transistors and organic light-emitting diodes.

Abstract: A method for growing an epitaxial silicon-germanium layer is described. The method includes removing a native oxide layer on the silicon substrate surface. A HF vapor treatment process is then conducted on the silicon substrate. Thereafter, a germanium layer is formed on the silicon substrate, followed by performing a rapid thermal anneal process under an inert gas to form a silicon-germanium alloy layer on the surface of the silicon substrate.

Abstract: The invention relates to a method for producing a structured layer of defined functional molecules on the surface of a flat substrate, on the surface of which structures having different surface properties, at least as regards their hydrophobicity, are produced. A monolayer of a protein-containing crystalline cell surface layer (S layer) is deposited by recrystallization on said structured surface. Said S Layer binds only to those structured areas of the surface characterized by raised hydrophobicity. Alternatively, a structured S-layer may also be produced on the basis of a monolayer of an S layer deposited on a substrate by irradiating predefined sections of said layer to be structured with radiation of a predetermined intensity and energy. In the irradiated sections of the S-layer this suppresses the binding or intercalating ability of at least one surface.

Abstract: Disclosed is a method for manufacturing a high conductivity p-type GaN-based thin film superior in electrical and optical properties by use of nitridation and RTA (rapid thermal annealing) in combination. A GaN-based epitaxial layer is grown to a desired thickness while being doped with Mg dopant with a carrier gas of hydrogen by use of a MOCVD process. The film thus obtained is subjected to nitridation using nitrogen plasma and RTA in combination. The p-type GaN-based thin film exhibits high hole concentration as well as low resistivity, so that it can be used where high electrical, optical, thermal and structural properties are needed. The method finds application in the fabrication of blue/white LEDs, laser diodes and other electronic devices.

Abstract: A method for forming an optical device includes the steps of providing a first plate having a first face defining a recess, filling the recess with a material which can be crystallized, and covering the first face and the recess with a second plate having a second face, so that the second face is in contact with the first face and the material in the recess is completely enclosed by the first and second plates. The material in the recess is thereby protected from chemical and mechanical damage, as well as evaporation. In addition, the plates can be transparent, allowing the material in the recess to be visually monitored. A grown crystalline film packed in the cell can be used as a non-liner and/or electro-optical device.

Abstract: A semiconductor structure and device for use in a semiconductor application utilizes a substrate of semiconductor-based material, such as silicon, and a thin film of a crystalline oxide whose unit cells are capable of exhibiting anisotropic behavior overlying the substrate surface. Within the structure, the unit cells of the crystalline oxide are exposed to an in-plane stain which influences the geometric shape of the unit cells and thereby arranges a directional-dependent quality of the unit cells in a predisposed orientation relative to the substrate. This predisposition of the directional-dependent quality of the unit cells enables the device to take beneficial advantage of characteristics of the structure during operation.

Abstract: A process for producing a semi-insulating InP single crystal and a semi-insulating InP single crystal are disclosed. The process comprises: a first step heat-treatment for heating an undoped InP single crystal having a concentration of a residual impurity of 0.05 ppmw or less containing at least one of Fe, Co and Cr, at a temperature of not less than 930.degree. C. and less than 1000.degree. C. in an atmosphere of phosphorous vapor pressure in the ampoule which is not less than a dissociation pressure of InP in equilibrium at the temperature and which is not more than 15 atm; and a second step heat-treatment for thereafter heating the InP single crystal at a temperature of not less than 662.degree. C. and less than 900.degree. C. in an atmosphere of phosphorous vapor pressure in the ampoule which is not less than 5 atm nor more than 50 atm. The semi-insulating InP single crystal substrate has a uniformity of mobility not more than 10% on the surface of the substrate.

Abstract: Secondary recrystallized grains having a plurality of crystal orientations in a polycrystalline compact of molybdenum or tungsten, which contains at least one element selected from the group consisting of calcium and magnesium in amount of 0.007 to 0.090 atom %, are formed by locally heating an end portion(s) of the polycrystalline compact. Some grains, which have a prescribed crystal orientation, selected from these secondary recrystallized grains are subsequently grown in the whole polycrystalline compact by annealing.

Abstract: Novel Bi-layer Perovskite ferroelectrics constituted of BiO intermediate layers (17) and pseudo-Perovskite layers (18) stacked alternately are disclosed. The Bi-layer Perovskite ferroelectrics have such a crystal structure which has a fundamental skeleton composed of each intermediate layer (17) consisting of one BiO plane and each pseudo-Perovskite structure (18) consisting of Pb(Zr, Ti)O.sub.3. Since the intermediate layer (17) is constituted of the BiO layer, the ferroelectrics are more excellent in ferroelectric characteristics and thermodynamic stability than known Perovskite ferroelectrics comprising a Bi.sub.2 O.sub.2 layer.

Abstract: A method and system for manufacturing a semiconductor device having a semiconductor layer using a pulsed laser includes the steps of generating a laser beam using a solid laser source, generating a multi-harmonic wave from the laser beam using a multi-harmonic oscillator, filtering the multi-harmonic wave, and irradiating the filtered wave onto the semiconductor layer.