Seed Or Rod Holders Patents (Class 117/911)
  • Patent number: 11913133
    Abstract: The present invention relates to a method of manufacturing polycrystalline silicon ingot using a crucible in which an oxygen exhaust passage is formed by single crystal or polycrystalline rods, the method including the steps of: manufacturing the single crystal or polycrystalline silicon rods each having the shape of a quadrilateral pillar; putting the single crystal or polycrystalline quadrilateral pillar-shaped silicon rods into the crucible in such a manner as to be arranged close to one another along the inner peripheral surface of the crucible to thus form a space portion inside the single crystal or polycrystalline silicon rods, into which silicon chunks are put, and the oxygen exhaust passages between the inner peripheral surface of the crucible and the respective surfaces of the single crystal or polycrystalline silicon rods oriented toward the inner peripheral surface of the crucible; putting the silicon chunks into the space portion of the crucible; and melting and crystallizing the silicon chunks.
    Type: Grant
    Filed: July 6, 2022
    Date of Patent: February 27, 2024
    Assignee: Lintech Corporation
    Inventors: Ho Jung You, Dong Nam Shin, Sei Kwang Oh, Jun Seok Lee, Sun Bin Yum, Tae-Woo Kang
  • Patent number: 8956455
    Abstract: A seed crystal holder for growing single crystals, such as for use in scintillation detectors for nuclear medicine. The holder includes a cooling shaft, a fastener attached to the cooling shaft, and a gasket for separating the cooling shaft from the seed crystal. The gasket is made of a heat-transferable material such as steel wool or metallic foil to conduct heat from the seed crystal to the cooling shaft, while also providing a cushioning effect to cushion the seed crystal against potentially damaging motion forces.
    Type: Grant
    Filed: February 13, 2007
    Date of Patent: February 17, 2015
    Assignee: Siemens Medical Solutions USA, Inc.
    Inventors: Olexy V. Radkevich, Volodimir Protsenko
  • Patent number: 8298335
    Abstract: An enclosure that maintains the environment of one or more optical crystals and allows efficient frequency conversion for light at wavelengths at or below 400 nm with minimal stress being placed on the crystals in the presence of varying temperatures. Efficient conversion may include multiple crystals of the same or different materials. Multiple frequency conversion steps may also be employed within a single enclosure. Materials that have been processed specifically to provide increased lifetimes, stability, and damage thresholds over designs previously available are employed. The enclosure allows pre-exposure processing of the crystal(s) such as baking at high temperatures and allowing real time measurement of crystal properties.
    Type: Grant
    Filed: May 6, 2008
    Date of Patent: October 30, 2012
    Assignee: KLA-Tencor Technologies Corporation
    Inventor: J. Joseph Armstrong
  • Patent number: 7828897
    Abstract: A pulling apparatus and a method with which especially heavy crystals (5) can be pulled using the Czochralski method utilizing the pulling apparatus. For this purpose the neck (4) of the crystal (5) has an enlargement (10) beneath which extends the support device. This device includes latches (7), which are moved from a resting position into an operating position in which the latches (7) extend beneath the enlargement (10). Each latch (7) is supported on the base body such that it is swivellable about a pivot axis (8) and can assume two stable positions, namely the resting position and the operating position. Each of these positions is defined by a stop on the base body. When the latch rests on the one stop, its center of gravity, viewed from the neck (4), is located on the other side of the pivot axis (8). When the latch rests on the other stop, the center of gravity is located on this side of the pivot axis (8).
    Type: Grant
    Filed: July 25, 2007
    Date of Patent: November 9, 2010
    Assignees: Crystal Growing Systems GmbH, Siltronic AG
    Inventors: Burkhard Altekrüger, Stefan Henkel, Axel Vonhoff, Erich Tomzig, Dieter Knerer
  • Patent number: 7815736
    Abstract: An apparatus for supporting a single crystal during Czochralski crystal pulling below a thickened crystal neck has lower bearing surface(s) with a central opening inscribable with a horizontal circle of diameter D1, centered on a vertical axis, the bearing surface(s) connected by connecting element(s) to minimally one securing element for securing to a crystal pulling lifting device, the connecting elements arranged to provide a clear-space in the region above the bearing surface(s) in which a circle of diameter D2 centered on the vertical axis (D2>D1) is inscribable over a length of the vertical axis. The unitary apparatus is useful for crystal ingot growth by immersion into the semiconductor melt prior to growth of a Dash neck and a thickening of the Dash neck. The apparatus is then raised to support the crystal by bearing against the bottom of the thickening.
    Type: Grant
    Filed: August 24, 2006
    Date of Patent: October 19, 2010
    Assignee: Siltronic AG
    Inventor: Dieter Knerer
  • Patent number: 7582159
    Abstract: A method for producing a single crystal by Czochralski method with pulling a seed crystal from a raw material melt, wherein in which a range of a pulling rate of pulling a single crystal, a temperature gradient at a solid-liquid interface and a highest temperature at an interface between a crucible and a raw material melt are defined. The single crystal is pulled with controlling the pulling rate and/or the temperature gradient at a solid-liquid interface within the determined range. The method produces a single crystal in which a desired defect region and/or a desired defect-free region can be determined more precisely and a single crystal with desired quality can be more surely pulled.
    Type: Grant
    Filed: April 26, 2004
    Date of Patent: September 1, 2009
    Assignee: Shin-Etsu Handotai Co., Ltd.
    Inventor: Makoto Iida
  • Patent number: 7501022
    Abstract: Methods for producing silicon carbide crystals, seed crystal holders and seed crystal for use in producing silicon carbide crystals and silicon carbide crystals are provided. Silicon carbide crystals are produced by forcing nucleation sites of a silicon carbide seed crystal to a predefined pattern and growing silicon carbide utilizing physical vapor transport (PVT) so as to provide selective preferential growth of silicon carbide corresponding to the predefined pattern. Seed holders and seed crystals are provided for such methods. Silicon carbide crystals having regions of higher and lower defect density are also provided.
    Type: Grant
    Filed: October 4, 2006
    Date of Patent: March 10, 2009
    Assignee: Cree, Inc.
    Inventor: Stephan Mueller
  • Patent number: 7455731
    Abstract: A polycrystalline silicon rod according to present invention has a structure for hanging of polycrystalline silicon rods to each other end-to-end, so that the efficiency of melting polycrystalline silicon can be increased considerably. A polycrystalline silicon rod obtained by entirely or partially removing a peripheral portion from the rod to leave a central portion, and processing the central portion, preferably, the peripheral portion is removed by grinding in an amount corresponding to 10 to 60% of the diameter of the rod, and then subjected to groove-forming processing. This makes annealing unnecessary.
    Type: Grant
    Filed: May 1, 2006
    Date of Patent: November 25, 2008
    Assignee: Mitsubishi Materials Corporation
    Inventors: Mamoru Nakano, Yukio Yamaguchi, Teruhisa Kitagawa, Rikito Sato, Naoki Hatakeyama
  • Patent number: 7413609
    Abstract: A semiconductor single crystal manufacturing apparatus capable of lowering the local deterioration of a wire under high temperature atmosphere in the furnace of a chamber, wherein a crucible (24) in which silicon melt (28) is filled is installed in the furnace of the chamber (22), a pull-chamber (23) is disposed above the chamber (22), and a seed holder (32) lifting between the inside of the pull-chamber (23) and the inside of the furnace is suspended by a wire (50) through a coupling member (31). A collar (52) is fitted to the wire (50) so that, when the seed holder (32) is positioned to touch the melt, the exposed portion of the wire (50) near the tip thereof becomes a specified temperature or below under the high temperature atmosphere in the furnace.
    Type: Grant
    Filed: October 13, 2004
    Date of Patent: August 19, 2008
    Assignee: Sumco Techxiv Corporation
    Inventor: Toshirou Umeki
  • Patent number: 7364617
    Abstract: A silicon carbide seeded sublimation method is disclosed. The method includes the steps of nucleating growth on a seed crystal growth face that is between about 1° and 10° off-axis from the (0001) plane of the seed crystal while establishing a thermal gradient between the seed crystal and a source composition that is substantially perpendicular to the basal plane of the off-axis crystal.
    Type: Grant
    Filed: February 5, 2007
    Date of Patent: April 29, 2008
    Assignee: Cree, Inc.
    Inventors: Stephan Mueller, Adrian Powell, Valeri F. Tsvetkov
  • Patent number: 7244309
    Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.
    Type: Grant
    Filed: June 7, 2005
    Date of Patent: July 17, 2007
    Assignee: Sumco TechXIV Corporation
    Inventors: Daisuke Ebi, Shigeo Morimoto
  • Patent number: 7232489
    Abstract: An apparatus for holding a crucible or other item is provided. The apparatus includes a first support member having a straight portion with two ends. A second support member having a shaped portion is connected to one of the ends of the first support member, wherein the shape of the shaped portion accommodates the crucible or other item. A support material covers the second support member, wherein the support material increases the coefficient of friction between the crucible or other item and the second support member. A spring is coupled to the other end of the first support member, and a third support member is coupled to the spring and configured so as to apply a force to the crucible or other item when the crucible or other item is placed in the shaped portion of the second support member.
    Type: Grant
    Filed: July 13, 2005
    Date of Patent: June 19, 2007
    Inventor: Olivia Webb
  • Patent number: 7135072
    Abstract: Methods for producing silicon carbide crystals, seed crystal holders and seed crystal for use in producing silicon carbide crystals and silicon carbide crystals are provided. Silicon carbide crystals are produced by forcing nucleation sites of a silicon carbide seed crystal to a predefined pattern and growing silicon carbide utilizing physical vapor transport (PVT) so as to provide selective preferential growth of silicon carbide corresponding to the predefined pattern. Seed holders and seed crystals are provided for such methods. Silicon carbide crystals having regions of higher and lower defect density are also provided.
    Type: Grant
    Filed: January 13, 2004
    Date of Patent: November 14, 2006
    Assignee: Cree, Inc.
    Inventor: Stephan Mueller
  • Patent number: 7060355
    Abstract: A polycrystalline silicon rod according to present invention has a structure for hanging of polycrystalline silicon rods to each other end-to-end, so that the efficiency of melting polycrystalline silicon can be increased considerably. A polycrystalline silicon rod obtained by entirely or partially removing a peripheral portion from the rod to leave a central portion, and processing the central portion, preferably, the peripheral portion is removed by grinding in an amount corresponding to 10 to 60% of the diameter of the rod, and then subjected to groove-forming processing. This makes annealing unnecessary.
    Type: Grant
    Filed: June 1, 2001
    Date of Patent: June 13, 2006
    Assignee: Mitsubishi Materials Polycrystalline Silicon Corporation
    Inventors: Mamoru Nakano, Yukio Yamaguchi, Teruhisa Kitagawa, Rikito Sato, Naoki Hatakeyama
  • Patent number: 7022181
    Abstract: In a liquid phase growth process comprising immersing a substrate in a melt held in a crucible, a crystal material having been dissolved in the melt, and growing a crystal on the substrate, at least a group of substrates to be immersed in the melt held in the crucible are fitted to the supporting rack at a position set aside from the center of rotation of the crucible or supporting rack, and the crystal is grown on the surface of the substrate thus disposed. This can provide a liquid phase growth process which can attain a high growth rate, can enjoy uniform distribution of growth rate in each substrate and between the substrates even when substrates are set in a large number in one batch, and can readily keep the melt from reaction and contamination even when the system has a large size, and provide a liquid phase growth system suited for carrying out the process.
    Type: Grant
    Filed: December 14, 2001
    Date of Patent: April 4, 2006
    Assignee: Canon Kabushiki Kaisha
    Inventors: Katsumi Nakagawa, Tetsuro Saito, Tatsumi Shoji, Takehito Yoshino, Shoji Nishida, Noritaka Ukiyo, Masaaki Iwane, Masaki Mizutani
  • Patent number: 6977010
    Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.
    Type: Grant
    Filed: January 7, 2003
    Date of Patent: December 20, 2005
    Assignee: Komatsu Denshi Kinzoku Kabushiki Kaisha
    Inventors: Hiroshi Inagaki, Shigeki Kawashima, Makoto Kamogawa, Toshirou Kotooka, Toshiaki Saishoji, Daisuke Ebi, Kentaro Nakamura, Kengo Hayashi, Yoshinobu Hiraishi, Shigeo Morimoto, Hiroshi Monden, Tadayuki Hanamoto, Tadashi Hata
  • Patent number: 6953506
    Abstract: A wafer cassette comprises a holding member having a depression corresponding to the shape of the substrate, and a cover having an opening smaller than the surface size of the substrate. The substrate is to be held in the depression by means of the holding member and the cover, and the substrate is to be covered at its one-side surface, side and all peripheral region of the other-side surface, with the holding member at its depression and with the cover at the edge of its opening. Also disclosed are a liquid-phase growth system and a liquid-phase growth process which make use of the wafer cassette.
    Type: Grant
    Filed: October 18, 2001
    Date of Patent: October 11, 2005
    Assignee: Canon Kabushiki Kaisha
    Inventors: Masaaki Iwane, Tetsuro Saito, Tatsumi Shoji, Makoto Iwakami, Takehito Yoshino, Shoji Nishida, Noritaka Ukiyo, Masaki Mizutani
  • Patent number: 6835247
    Abstract: A system is disclosed for efficient utilization of charge replenishment rods in Czochralski silicon crystal growing processes.
    Type: Grant
    Filed: October 26, 2001
    Date of Patent: December 28, 2004
    Assignee: Advanced Silicon Materials LLC
    Inventors: Henry D. Wood, John Peter Hill, Jay Curtis Nelson, William John Juhasz, Jr., Howard J. Dawson
  • Patent number: 6821344
    Abstract: A silicon wafer is provided having controlled distribution of defects, in which denuded zones having a sufficient depth inward from the surface of the wafer are combined with a high gettering effect in a bulk region of the wafer. In the silicon wafer, oxygen precipitates, which act as intrinsic gettering sites, show vertical distribution. The oxygen precipitate concentration profile from the top to the bottom surfaces of the wafer includes first and second peaks at first and second predetermined depths from the top and bottom surfaces of the wafer, denuded zones between the top and bottom surfaces of the wafer and each of the first and second peaks, and a concave region between the first and second peaks, which corresponds to a bulk region of the wafer. For such an oxygen precipitate concentration profile, the wafer is exposed to a rapid thermal annealing process in a gas mixture atmosphere containing nitrogen (N2) and argon (Ar) or N2 and hydrogen (H2), in a donor killing step during a wafering process.
    Type: Grant
    Filed: August 13, 2002
    Date of Patent: November 23, 2004
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Jea-gun Park
  • Patent number: 6758901
    Abstract: The invention relates to a method and to a device for supporting a crystal ingot while pulling a single crystal, in particular such a crystal composed of silicon, according to the Czochralski method. To this end, a crystal support is provided which engages with a specialized bead, which is formed on the neck of the single crystal ingot and which has the shape of a bicone, by means of bearings in a housing. A support of the crystal ingot is thus achieved which may be disengaged at any time, and which has no disruptive effects on crystal growth and which acts independently of the length of the grown crystal. The bearings are moved into the support position on the bicone by a central pulling element which can be independently displaced relative to a second pulling element.
    Type: Grant
    Filed: March 11, 2002
    Date of Patent: July 6, 2004
    Assignee: Crystal Growing Systems GmbH
    Inventors: Winfried Schulmann, Helmut Kaiser
  • Patent number: 6733585
    Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.
    Type: Grant
    Filed: February 1, 2001
    Date of Patent: May 11, 2004
    Assignee: Komatsu Denshi Kinzoku Kabushiki Kaisha
    Inventors: Hiroshi Inagaki, Shigeki Kawashima, Makoto Kamogawa, Tadashi Hata
  • Patent number: 6706114
    Abstract: Methods for producing silicon carbide crystals, seed crystal holders and seed crystal for use in producing silicon carbide crystals and silicon carbide crystals are provided. Silicon carbide crystals are produced by forcing nucleation sites of a silicon carbide seed crystal to a predefined pattern and growing silicon carbide utilizing physical vapor transport (PVT) so as to provide selective preferential growth of silicon carbide corresponding to the predefined pattern. Seed holders and seed crystals are provided for such methods. Silicon carbide crystals having regions of higher and lower defect density are also provided.
    Type: Grant
    Filed: May 21, 2001
    Date of Patent: March 16, 2004
    Assignee: Cree, Inc.
    Inventor: Stephan Mueller
  • Patent number: 6676753
    Abstract: A silicon wafer is provided having controlled distribution of defects, in which denuded zones having a sufficient depth inward from the surface of the wafer are combined with a high gettering effect in a bulk region of the wafer. In the silicon wafer, oxygen precipitates, which act as intrinsic gettering sites, show vertical distribution. The oxygen precipitate concentration profile from the top to the bottom surfaces of the wafer includes first and second peaks at first and second predetermined depths from the top and bottom surfaces of the wafer, denuded zones between the top and bottom surfaces of the wafer and each of the first and second peaks, and a concave region between the first and second peaks, which corresponds to a bulk region of the wafer. For such an oxygen precipitate concentration profile, the wafer is exposed to a rapid thermal annealing process in a gas mixture atmosphere comprising ammonia (NH3) and argon (Ar) at temperatures below about 1200° C.
    Type: Grant
    Filed: September 4, 2002
    Date of Patent: January 13, 2004
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Jea-gun Park
  • Patent number: 6670036
    Abstract: There are disclosed a silicon seed crystal which is composed of silicon single crystal and used for the Czochralski method, wherein oxygen concentration in the seed crystal is 15 ppma (JEIDA) or less, a silicon seed crystal which is used for the Czochralski method, wherein the silicon seed crystal does not have a straight body, and a method for producing a silicon single crystal by the Czochralski method comprising using said seed crystal, bringing a tip end of the seed crystal into contact with a silicon melt to melt the tip end of the seed crystal, with or without performing necking operation, and growing a silicon single crystal. The method is capable of improving the rate of success in making crystals dislocation-free and the productivity of single crystal rods regardless of the use of necking operation.
    Type: Grant
    Filed: April 6, 1999
    Date of Patent: December 30, 2003
    Assignee: Shin-Etsu Handotai Co., Ltd.
    Inventors: Eiichi Iino, Masanori Kimura
  • Patent number: 6663710
    Abstract: An apparatus and a method that permits a seed crystal to be directed to a precise location of a melt for growing a ribbon-shaped crystal, but after the crystal has commenced growing, the ribbon-shaped crystal is continuously pulled up so as to produce a longitudinally extending crystal using a continuous pulling device. The method for producing a ribbon-shaped crystal includes growing a ribbon-shaped crystal on a seed crystal using a linear pulling device for pulling the seed crystal and a crystal growing at the end of the seed crystal in a vertical direction, and continuing to pull the ribbon-shaped crystal by using a continuous pulling device having a continuous pulling mechanism.
    Type: Grant
    Filed: October 29, 2001
    Date of Patent: December 16, 2003
    Assignee: Ebara Corporation
    Inventors: Kentaro Fujita, Kenji Terao, Hideyuki Isozaki, Iwao Satoh
  • Patent number: 6645296
    Abstract: To miniaturize a crystal holding apparatus which mechanically holds and pulls up a single crystal at a top thereof. To avoid harmful influence on crystal growing resulting from crystal holding. A plurality of pivot clamps 40, 40 are circumferentially mounted at regular intervals on a cylindrical frame 30 which lifts and lowers and rotates for pulling up the single crystal. A clamp operation mechanism 50 is incorporated in the frame 30, which is pushed by a seed chuck 2 lifting in the frame 30 to shift the pivot clamps 40, 40 from an open condition to a close condition. The clamp operation mechanism 50 shifts the pivot clamps 40, 40 from the open condition to close condition when a neck passes inside the pivot clamps 40, 40, and release the pivot clamps 40, 40 after the shift.
    Type: Grant
    Filed: January 8, 2002
    Date of Patent: November 11, 2003
    Assignee: Sumitomo Mitsubishi Silicon Corporation, Ltd.
    Inventors: Yoshihiro Akashi, Teruo Kageyama
  • Patent number: 6444028
    Abstract: A charging material made from semiconductor material, is used for charging or recharging a melting crucible during the Czochralski crucible-pulling process. This charging material has a polycrystalline semiconductor rod, which at one end has a groove, and a monocrystalline semiconductor rod, which at one end has a tongue, which rods are coupled by means of a tongue-and-groove connection. There is also a holding system for holding a polycrystalline silicon rod during the Czochralski crucible-pulling process or the float zone process, which has a tongue-and-groove connection between the polycrystalline semiconductor rod, which at one end has a groove, and a monocrystalline semiconductor rod, which at one end has a tongue.
    Type: Grant
    Filed: May 8, 2001
    Date of Patent: September 3, 2002
    Assignee: Wacker-Chemie GmbH
    Inventors: Axel Frauenknecht, Matthäus Schantz, Viktor Beer
  • Publication number: 20020117106
    Abstract: To miniaturize a crystal holding apparatus which mechanically holds and pulls up a single crystal at a top thereof. To avoid harmful influence on crystal growing resulting from crystal holding. A plurality of pivot clamps 40, 40 are circumferentially mounted at regular intervals on a cylindrical frame 30 which lifts and lowers and rotates for pulling up the single crystal. A clamp operation mechanism 50 is incorporated in the frame 30, which is pushed by a seed chuck 2 lifting in the frame 30 to shift the pivot clamps 40, 40 from an open condition to a close condition. The clamp operation mechanism 50 shifts the pivot clamps 40, 40 from the open condition to close condition when a neck passes inside the pivot clamps 40, 40, and release the pivot clamps 40, 40 after the shift.
    Type: Application
    Filed: January 8, 2002
    Publication date: August 29, 2002
    Inventors: Yoshihiro Akashi, Teruo Kageyama
  • Publication number: 20020108557
    Abstract: A system is disclosed for efficient utilization of charge replenishment rods in Czochralski silicon crystal growing processes.
    Type: Application
    Filed: October 26, 2001
    Publication date: August 15, 2002
    Inventors: Henry D. Wood, John Peter Hill, Jay Curtis Nelson, William John Juhasz, Howard J. Dawson
  • Patent number: 6423135
    Abstract: A method for improving the productivity when a single crystal is pulled while being mechanically held at a knob section formed at an upper end of the crystal. By controlling the crucible rotational speed, a reproducible knob section having a complex shape can be formed in a more time efficient manner than if the knob section were formed by controlling the temperature of the heater.
    Type: Grant
    Filed: June 5, 2000
    Date of Patent: July 23, 2002
    Assignee: Sumitomo Metal Industries, Ltd.
    Inventors: Yoshihiro Akashi, Yasuhiro Kogure
  • Publication number: 20020088391
    Abstract: A seed crystal holder holds a SiC seed crystal while a SiC bulk single crystal is grown on the front surface of the seed crystal. The holder includes a back surface body with a bearing surface for bearing against a back surface of the SiC seed crystal. The holder includes a lateral mount for receiving the back surface body and the SiC seed crystal. The lateral mount has a projection located on an end facing the SiC seed crystal. The SiC seed crystal rests on the projection.
    Type: Application
    Filed: January 7, 2002
    Publication date: July 11, 2002
    Inventors: Harald Kuhn, Rene Stein, Johannes Voelkl, Wolfgang Zintl
  • Patent number: 6340391
    Abstract: A method for producing a single crystal by pulling the single crystal with a wire according to the Czochralski method, wherein temperature around an end of joint part of the wire and a seed crystal holder is controlled so as not to exceed 1200° C., preferably 800° C., at any time, and material of the wire is one selected from tungsten, stainless steel and molybdenum, and a pulling apparatus therefor. According to the present invention, there can be provided a method in which temperature around an end of joint part of a wire and a seed crystal holder is controlled so as not to exceed a temperature at which material degradation of the wire begins during the period of from seeding to an early stage of the pulling, and a pulling apparatus therefor.
    Type: Grant
    Filed: August 14, 2000
    Date of Patent: January 22, 2002
    Assignee: Shin-Etsu Handotai Co.
    Inventors: Eiichi Iino, Kouji Kitagawa
  • Patent number: 6315827
    Abstract: There is described an apparatus for producing a single crystal ingot capable of stably manufacturing a single crystal ingot by means of the Czochralski method, without being affected by influence of variation in extension of wires or an offset in points clamped by a clamping member. The clamping member is engaged with an engagement step formed in a single crystal which is being pulled by the CZ method, and the single crystal is pulled. The single crystal ingot manufacturing apparatus is provided with a flexible mechanism for absorbing variation in extension of the wires, in intermediate portions of the wires. Variation in extension of the wires is eliminated by means of the flexible mechanism, thereby retaining the single crystal in an upright position. Further, a sacrifice member which deforms so as to conform to the circumference of the engagement step is interposed between the clamping member and the engagement step, thereby preventing occurrence of cracking or deformation in the single crystal.
    Type: Grant
    Filed: September 30, 1999
    Date of Patent: November 13, 2001
    Assignee: Komatsu Electronics Metals Co., Ltd.
    Inventors: Shoei Kurosaka, Junsuke Tomioka, Masakazu Kobayashi, Kazuhiro Mimura, Kenji Okamura, Hiroshi Monden, Naritoshi Ohtsukasa, Hiroshi Yoshinada
  • Patent number: 6315970
    Abstract: There is provided a seed crystal having a strength that the seed crystal is not broken even when the heavy single crystal is produced. The seed crystal is a seed crystal used for producing a single crystal according to Czochralski method wherein a relation between a sectional area of the seed crystal S (mm2) and a weight W (kg) of the single crystal to be pulled is represented by the formula: S>W. The single crystal is produced using the seed crystal. Furthermore, the single crystal is pulled with conforming a sectional area S (mm2) of a seed crystal and a weight W (kg) of a single crystal to be pulled to the formula: S>W.
    Type: Grant
    Filed: March 29, 2000
    Date of Patent: November 13, 2001
    Assignee: Shin-Etsu Handotai Co., Ltd.
    Inventor: Eiichi Iino
  • Patent number: 6299684
    Abstract: A grip for a crystal ingot mounted on a pull shaft has grip arms which cross each other. These grip arms have respective holding jaws on the side of the crystal ingot opposite the swivel bearing of the respective grip arm. Furthermore, a respective activating arm is provided on them on the side of the grip arm opposite the swivel bearing. As a result of this configuration, the grip is biased by the weight of a gripped crystal ingot in the closing direction.
    Type: Grant
    Filed: August 31, 2000
    Date of Patent: October 9, 2001
    Assignee: Leybold Systems GmbH
    Inventor: Winfried Schulmann
  • Patent number: 6270575
    Abstract: A value of electric current flowing a neck to a melt is detected, and it is judged that a breaking of the neck occurs when the detected value has been zero, and then a seed is lowered to dip a broken part on the melt. After that the seed is lifted again to restart a pulling operation.
    Type: Grant
    Filed: June 21, 1999
    Date of Patent: August 7, 2001
    Assignee: Komatsu Electronic Metals Co., Ltd.
    Inventors: Shoei Kurosaka, Makoto Kamogawa, Nobuyuki Hukuda, Junsuke Tomioka
  • Patent number: 6251184
    Abstract: Heat shields for Czochralski pullers include a ring-shaped heat shield housing comprising inner and outer heat shield housing walls and an oblique heat shield housing floor and a heat shield housing roof that extend between the inner and outer heat shield housing walls. The heat shield housing contains insulating material therein. A support member is configured to support the heat shield housing within the crucible in a Czochralski puller. In one embodiment, the support member includes at least one support arm that extends to the ring-shaped heat shield housing. The at least one support arm may be hollow and may contain insulating material therein. In another embodiment, the support member is a ring-shaped support member. The ring-shaped support member may include inner and outer support member walls containing insulating material therebetween. The ring-shaped support member may also include at least one window therein. The ring-shaped member may be oblique.
    Type: Grant
    Filed: May 26, 1999
    Date of Patent: June 26, 2001
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Jae-gun Park
  • Patent number: 6238483
    Abstract: A device for supporting a semiconductor ingot during growth of the ingot. The device includes a chuck in which is mounted a seed. The seed includes an elongate rod having one end projecting from the chuck for growth of the ingot thereon. A latch pin secures the seed in the chuck in a removable manner. The chuck is suspended in a semiconductor furnace. The chuck, seed and latch pin and interengaged in a manner to reduce forming flaws in the ingot.
    Type: Grant
    Filed: August 31, 1999
    Date of Patent: May 29, 2001
    Assignee: MEMC Electronic Materials, Inc.
    Inventor: Carl F. Cherko
  • Patent number: 6228167
    Abstract: In the apparatus according to the present invention, self-weight of a single crystal is moved in soft manner when the single crystal being pulled up is gripped by grippers, and driving of pulling operation after self-weight movement is performed by a single driving source, and it is aimed to prevent contamination and dislocation of the single crystal by arranging all driving units outside a vacuum chamber for storing the single crystal. There is provided a support member 70 for supporting a portion with larger diameter 5 under a seed crystal 3, and the support member 70 is provided with a through-hole, which is communicated with outer peripheral portion via a slit 74, and it can be rotated in horizontal direction between a non-holding position and a holding position by the motor 40.
    Type: Grant
    Filed: May 9, 1999
    Date of Patent: May 8, 2001
    Assignee: Super Silicon Crystal Research Institute Corp.
    Inventors: Makoto Kuramoto, Tetsuhiro Iida
  • Patent number: 6217648
    Abstract: With relatively simple arrangement and at low cost, the present invention provides a single crystal pulling apparatus, by which it is possible to prevent a single crystal from being turned to polycrystal, to move the crystal itself smoothly and gently from a necking portion during pulling operation of the single crystal, and to reliably hold the single crystal even in case of trouble such as power suspension.
    Type: Grant
    Filed: April 21, 1999
    Date of Patent: April 17, 2001
    Assignee: Super Silicon Crystal Research Institute Corporation
    Inventor: Yutaka Shiraishi
  • Patent number: 6203614
    Abstract: A cable assembly for supporting a seed chuck in a crystal puller to grow monocrystalline ingots according to the Czochralski method comprises a cable adapted for generally vertical movement within the crystal puller relative to a source of molten material. A chuck support is connected to an end of the cable within the crystal puller and is configured for supporting the seed chuck. The chuck support is constructed of a refractory material having a high creep rupture strength and comprises an elongate shank having an upper end and a lower end and an enlarged end member at the lower end of the shank. A coupling is constructed of a malleable material and is deformable into engagement with the end of the cable and the upper end of the shank to join the chuck support to the cable.
    Type: Grant
    Filed: May 28, 1999
    Date of Patent: March 20, 2001
    Assignee: MEMC Electronic Materials, Inc.
    Inventor: Carl F. Cherko
  • Patent number: 6197108
    Abstract: In a method of manufacturing a silicon monocrystalline ingot using the Czochralski (CZ) method, there is used a seed crystal whose tip end has a sharp-pointed shape or a truncation thereof, and the maximum apex angle is not less than 3° but not greater than 28°. In this case, a monocrystal having an etched tip end portion or a monocrystalline ingot manufactured in accordance with the CZ method and having a tail portion is used as the seed crystal. Further, there may be used a silicon seed crystal having a tapered tip end portion of a conical or pyramidal shape, a straight body portion of a cylindrical columnar or rectangular columnar shape, and an intermediate portion located between the tip end portion and the straight body portion and having a truncated conical or pyramidal shape formed by a curved outer surface. A silicon monocrystalline ingot having a desired diameter is grown through use of such a seed crystal without performance of necking.
    Type: Grant
    Filed: December 14, 1998
    Date of Patent: March 6, 2001
    Assignee: Shin-Etsu Handotai, Co. Ltd.
    Inventors: Eiichi Iino, Masanori Kimura
  • Patent number: 6183556
    Abstract: A seed chuck for supporting a seed crystal for dipping in a hot melt has a main body including a dipping support formation for connection to a dipping apparatus and a seed support formation for supporting a seed crystal. A shield is coupled to the main body that insulates the seed crystal from cooling and heats the seed crystal with radiant energy emitted from the hot melt. The shield can be in the form of an insulating layer disposed against or inside of a portion of the seed chuck. In this case, the seed crystal is insulated from the cooler seed chuck and allowed to be warmed by the hot melt. The shield can also be a removable flange extending outwardly from the seed chuck and having an inverted cup shape or parabolic umbrella shape. In this case, the shield prevents cooling external gas flow from reaching the seed crystal while capturing and directing heat radiating from the hot melt onto the seed crystal.
    Type: Grant
    Filed: October 6, 1998
    Date of Patent: February 6, 2001
    Assignee: SEH-America, Inc.
    Inventors: Richard M. Aydelott, Clifford W. Groat
  • Patent number: 6159283
    Abstract: Apparatus for measuring the mechanical strength of a neck portion of a silicon seed crystal used for growing a silicon crystal by the Czochralski method includes a seed chuck for holding the seed crystal of a test sample and an end of a wire hung from an upper hook. A crystal holder which holds the other end part of the test sample from below is tied to a lower hook with another wire to support the holder. The apparatus includes means for pulling the hook at a given rate, and measuring means for continuously measuring tensile load. Such apparatus and the method thereby provide accurate measurement of mechanical strength of the neck portion of the silicon seed crystal with good precision and reproducibility. A single crystal ingot is grown under conditions affording good balance of productivity and safety.
    Type: Grant
    Filed: March 12, 1999
    Date of Patent: December 12, 2000
    Assignee: Shin-Etsu Handotai Co., Ltd.
    Inventors: Isamu Harada, Michiaki Oda, Masaru Toyoshima, Toshinari Murai, Eiichi Iino
  • Patent number: 6139633
    Abstract: Apparatus for pulling a single crystal of this invention is suitable as a silicon single crystal pulling technology that meets the needs for increased efficiency in the manufacture of semiconductors and can thus be utilized in the field of manufacturing semiconductors. The apparatus includes pulling means for forming an engaging stepped portion on a single crystal and a holding mechanism for gripping the engaging stepped portion of the single crystal. As the weight of the single crystal increases as the single crystal pulling operation proceeds, the apparatus causes the holding mechanism to start holding the single crystal before the weight of the single crystal reaches the limit of a load that can be borne by the dash neck portion. As a result of such construction, even when pulling a single crystal that is heavy, the apparatus can engage and grip such single crystal reliably, thereby implementing safe production of single crystals free from falling accidents.
    Type: Grant
    Filed: March 1, 1999
    Date of Patent: October 31, 2000
    Assignee: Sumitomo Metal Industries, Ltd.
    Inventor: Kiyofumi Nishiura
  • Patent number: 6139632
    Abstract: When a pulled single crystal becomes heavier, the strength of a seed crystal holder made of a carbon material is not sufficient, leading to falling of the single crystal. On the other hand, a seed crystal holder made of metal causes heavy metal contamination, or the strength thereof deteriorates early because of thermal fatigue. Accordingly, a seed crystal holder, comprising an inner cylindrical body made of metal which directly holds a seed crystal, and a carbon cylindrical body arranged around the inner cylindrical body which covers the periphery thereof, is used.
    Type: Grant
    Filed: October 29, 1999
    Date of Patent: October 31, 2000
    Assignee: Sumitomo Sitix Corporation
    Inventor: Teruo Izumi
  • Patent number: 6126746
    Abstract: A pulling shaft extension (2) is fastened to a pulling shaft (1). This pulling shaft extension contains a driver (13) that protrudes outward similar to a flange and is in the form of a ball bearing. A carrying ring (6) of a gripping device (4) is arranged above the driver (13). If the pulling shaft (1) is moved upward, it drives the gripping device (4) upward as soon as its driver (13) contacts the holding ring (6). An actuating piston (18) makes it possible to move gripping arms (5) of the gripping device (4) into a clamping position such that the crystal block is held by the gripping arms.
    Type: Grant
    Filed: November 17, 1998
    Date of Patent: October 3, 2000
    Assignee: Leybold Systems GmbH
    Inventor: Johann Scholler
  • Patent number: 6117234
    Abstract: The object of the present invention is to provide an apparatus and a method for preventing dropping of a single crystal having large diameter and heavy weight in a chamber with reduced pressure and for pulling it in reliable and safe manner. After a seed crystal 24a is immersed in Si melt in a quartz crucible 14, the seed crystal is pulled up, and a neck portion 1a with small diameter is formed under the seed crystal 24a, and a spherical constricted portion 1b is formed under the neck portion 1a, whereby a tip 23a of a single crystal support 23 is opened so that it does not come into contact with the constricted portion 1b under pulling operation.
    Type: Grant
    Filed: March 10, 1998
    Date of Patent: September 12, 2000
    Assignee: Super Silicon Crystal Research Institute Corp.
    Inventor: Hirotoshi Yamagishi
  • Patent number: 6113686
    Abstract: A method and apparatus for growing and manufacturing a single crystal according to a so-called Czochralski (CZ) method. A seed crystal 12 is connected to a tip end of a wire 41a as a hanging member 41 to pull and form a single crystal part 15, arm-shaped members 44a of a lifting jig 44 are engaged in a recess 16 of a corrugated portion 14 formed on the single crystal part 15 during the pulling operation, the pulling speeds of both of the arm-shaped members 44a and wire 41a are synchronously controlled to provide smooth transfer between the arm-shaped members 44a and wire 41a, whereby the single crystal part 15 is pulled always at a constant pulling speed. In particular, a heavy-weight single crystal can be safely pulled and formed without any dislocation therein while minimizing an impact force applied to the crystal.
    Type: Grant
    Filed: February 3, 1998
    Date of Patent: September 5, 2000
    Assignee: Shin-Etsu Handotai Co., Ltd.
    Inventors: Eiichi Iino, Yasushi Nakamura, Seiichiro Otsuka, Koji Midzuishi, Masanori Kimura, Hirotoshi Yamagishi
  • Patent number: 6106611
    Abstract: A seed chuck for supporting a seed crystal for dipping in a hot melt has a main body including a dipping support formation for connection to a dipping apparatus and a seed support formation for supporting a seed crystal. A shield is coupled to the main body that insulates the seed crystal from cooling and heats the seed crystal with radiant energy emitted from the hot melt. The shield can be in the form of an insulating layer disposed against or inside of a portion of the seed chuck. In this case, the seed crystal is insulated from the cooler seed chuck and allowed to be warmed by the hot melt. The shield can also be a removable flange extending outwardly from the seed chuck and having an inverted cup shape or parabolic umbrella shape. In this case, the shield prevents cooling external gas flow from reaching the seed crystal while capturing and directing heat radiating from the hot melt onto the seed crystal.
    Type: Grant
    Filed: October 14, 1999
    Date of Patent: August 22, 2000
    Assignee: SEH-America, Inc.
    Inventors: Richard M. Aydelott, Clifford W. Groat