Single-crystal Waveguide Patents (Class 117/918)

Cross-Reference Art Collections

Organic (Class 117/919)
  • Patent number: 10808313
    Abstract: A method for fabricating structures includes on a substrate includes providing the substrate having a substrate surface, and providing a set of control parameters to an ion beam source and to a thermal source corresponding to a desired structure topology. The method further includes using directed irradiation synthesis to cause self-organization of a plurality of structures comprising at least one of the group of nanostructures and microstructures in a first surface area of the substrate by exposing the substrate surface to an ion beam from the ion beam source and to thermal particles from the thermal source. The ion beam has a first area of effect on the substrate surface, and the thermal particles has a second area of effect on the substrate surface. Each of the first area of effect and the second area of effect including the first surface area.
    Type: Grant
    Filed: May 30, 2019
    Date of Patent: October 20, 2020
    Assignee: Purdue Research Foundation
    Inventors: Jean Paul Allain, Osman J. El-Atwani, Juan Jose Pavon Palacio
  • Patent number: 10309006
    Abstract: A method for fabricating structures includes on a substrate includes providing a set of control parameters to an ion beam source and to a thermal source corresponding to a desired structure topology. The method also includes using directed irradiation synthesis to form nano structures and/or microstructures in a first surface area of the substrate by exposing the substrate surface to an ion beam from the ion beam source and to thermal particles from the thermal source. The ion beam having a first area of effect on the substrate surface, and the thermal particles having a second area of effect on the substrate surface, each of the first area of effect and the second area of effect including the first surface area.
    Type: Grant
    Filed: March 16, 2018
    Date of Patent: June 4, 2019
    Assignee: Purdue Research Foundation
    Inventors: Jean Paul Allain, Osman J. El-Atwani, Juan Jose Pavon Palacio
  • Patent number: 9932664
    Abstract: A method for fabricating structures on substrate having a substrate surface includes providing a set of control parameters to an ion beam source and thermal source corresponding to a desired nanostructure topology. The method also includes forming a plurality of nanostructures in a first surface area of the substrate by exposing the substrate surface to an ion beam from the ion beam source and thermal energy from the thermal source. The ion beam has a first area of effect on the substrate surface, and the thermal energy has an second area of effect on the substrate surface Each of the first area and the second area includes the first surface area. In other words, the coincident beams under the set of control parameters produces a plurality of nano structures.
    Type: Grant
    Filed: November 6, 2013
    Date of Patent: April 3, 2018
    Assignee: Purdue Research Foundation
    Inventors: Jean Paul Allain, Osman J. El-Atwani, Juan Jose Pavon Palacio
  • Patent number: 7674737
    Abstract: An optical medium having a high refractive index without anisotropy and a wide transmission wavelength is obtained. The cubic crystal material is ??O3, where ? is at least one of K, Ba, Sr, Ca, and ? is at least one of Ta, Ti. Optimally, the cubic crystal material is KTa1-xNbxO3, where composition x is 0?x?0.35. This composition enables to raise refractive index while its phase transition temperature is below a room temperature.
    Type: Grant
    Filed: June 22, 2005
    Date of Patent: March 9, 2010
    Assignee: Nippon Telegraph and Telephone Corporation
    Inventors: Kazuo Fujiura, Tadayuki Imai, Masahiro Sasaura, Kouichirou Nakamura
  • Patent number: 7340147
    Abstract: The invention provides an optical waveguide material whose refractive index can be tailored without changing the ratio of Ta and Nb. An optical waveguide of this invention comprising an under-clad layer 1 and a core 2 that is formed on the under-clad layer 1 and has a higher refractive index than that of the under-clad layer 1 is shown. For example, KTN (KTa1-xNbxO3) is used as the core 2, and a material that is obtained by substituting at least one element selected from the group consisting of Zr, Hf, and Sn for a portion of one element of the constituent elements of KTN and has the same perovskite type crystal structure as KTN is used as the clad. The refractive index of KTN can be reduced considerably, and this controllability widens the degree of freedom in the design of optical waveguide devices.
    Type: Grant
    Filed: May 24, 2006
    Date of Patent: March 4, 2008
    Assignee: Nippon Telegraph and Telephone Corporation
    Inventors: Tadayuki Imai, Kazuo Fujiura, Makoto Shimokozono, Seiji Toyoda, Masahiro Sasaura, Tohru Matsuura
  • Patent number: 7262920
    Abstract: An optical element and a manufacturing method therefor, an exposure apparatus, and a device manufacturing method that can reduce the effect of intrinsic birefringence under high NA conditions. According to an optical element as one aspect of the present invention, an angle between a [0 0 1] axis of an isometric crystal and an optical axis is less than 10°, and preferably 0°.
    Type: Grant
    Filed: October 10, 2003
    Date of Patent: August 28, 2007
    Assignee: Canon Kabushiki Kaisha
    Inventors: Yasuyuki Unno, Seiji Takeuchi
  • Patent number: 7177514
    Abstract: The invention provides an optical waveguide material whose refractive index can be tailored without changing the ratio of Ta and Nb. An optical waveguide of this invention comprising an under-clad layer 1 and a core 2 that is formed on the under-clad layer 1 and has a higher refractive index than that of the under-clad layer 1 is shown. For example, KTN (KTa1?xNbxO3) is used as the core 2, and a material that is obtained by substituting at least one element selected from the group consisting of Zr, Hf, and Sn for a portion of one element of the constituent elements of KTN and has the same perovskite type crystal structure as KTN is used as the clad. The refractive index of KTN can be reduced considerably, and this controllability widens the degree of freedom in the design of optical waveguide devices.
    Type: Grant
    Filed: July 16, 2004
    Date of Patent: February 13, 2007
    Assignee: Nippon Telegraph and Telephone Corporation
    Inventors: Tadayuki Imai, Kazuo Fujiura, Makoto Shimokozono, Seiji Toyoda, Masahiro Sasaura, Tohru Matsuura
  • Patent number: 6996321
    Abstract: An optical waveguide capable of having various characteristics and a method of manufacture thereof as well as a method of manufacturing a crystal film are provided. An optical functional material KTaxNb1-xO3 is used as an optical waveguide. The input optical signal is transmitted to the KTaxNb1-xO3 film. The KTaxNb1-xO3 film undergoes changes in optical property when an external voltage signal is applied to the electrode. Therefore, as it passes through the KTaxNb1-xO3 film, the input optical signal is modulated by the characteristic change. The modulated optical signal is taken out as an output optical signal.
    Type: Grant
    Filed: August 3, 2004
    Date of Patent: February 7, 2006
    Assignee: Nippon Telegraph and Telephone Corporation
    Inventors: Masahiro Sasaura, Kazuo Fujiura, Koji Enbutsu, Tadayuki Imai, Shogo Yagi, Takashi Kurihara, Makoto Abe, Seiji Toyoda, Eishi Kubota
  • Patent number: 6792189
    Abstract: An optical waveguide capable of having various characteristics and a method of manufacture thereof as well as a method of manufacturing a crystal film are provided. An optical functional material KTaxNb1-xO3 is used as an optical waveguide. The input optical signal is transmitted to the KTaxNb1-xO3 film. The KTaxNb1-xO3 film undergoes changes in optical property when an external voltage signal is applied to the electrode. Therefore, as it passes through the KTaxNb1-xO3 film, the input optical signal is modulated by the characteristic change. The modulated optical signal is taken out as an output optical signal.
    Type: Grant
    Filed: May 13, 2002
    Date of Patent: September 14, 2004
    Assignee: Nippon Telegraph and Telephone Corporation
    Inventors: Masahiro Sasaura, Kazuo Fujiura, Koji Enbutsu, Tadayuki Imai, Shogo Yagi, Takashi Kurihara, Makoto Abe, Seiji Toyoda, Eishi Kubota
  • Patent number: 6605227
    Abstract: A method of manufacturing a ridge-shaped 3-dimensional waveguide, has the steps of: forming a crystal film made of a second ferroelectric oxide non-linear crystal having a refractive index higher than that of a substrate made of a first ferroelectric oxide non-linear crystal on the substrate; forming a metal film on the crystal film; forming a mask by etching the metal film; and forming a ridge portion by selectively removing the crystal film through the mask by a dry etching method.
    Type: Grant
    Filed: October 25, 1999
    Date of Patent: August 12, 2003
    Assignee: Pioneer Corporation
    Inventors: Ayako Yoshida, Atsushi Onoe, Kiyofumi Chikuma
  • Patent number: 6589333
    Abstract: A method is described for the production of a suitable substrate for the subsequent growth of a mono-crystalline diamond layer. This method includes the following steps: Selection of a substrate of a mono-crystalline material having a fixed lattice constant (aSi) or with a layer consisting of such a material. Manufacture of a strained silicon layer with foreign material atoms incorporated at substitutional lattice sites on the mono-crystalline material of the substrate. Transfer of the strained layer into an at least partly relaxed state in which it adopts by relaxation and through the selected foreign material concentration a lattice constant (aSi(C) which satisfies the condition n.aSi(C)=m.aD, wherein n and m are integers and aD is the lattice constant of diamond, with the relaxed layer forming the substrate or substrate surface for the epitaxial growth.
    Type: Grant
    Filed: September 18, 2000
    Date of Patent: July 8, 2003
    Assignee: Max-Planck-Gesellschaft zur Foerderung der Wissenschaften e.V.
    Inventors: Ulrich Gösele, Andreas Plössl
  • Patent number: 6447606
    Abstract: A method for producing a single-crystalline film made of a single crystal of lithium potassium niobate-lithium potassium tantalate solid solution or a single crystal of lithium potassium niobate, including the steps of preparing a target made of a material for the single-crystalline film, preparing a foundation made of a single crystal of lithium potassium niobate-lithium potassium tantalate solid solution or a single crystal of lithium potassium niobate, irradiating the target to gasify molecules constituting the target by dissociation and evaporation thereof, and epitaxially growing the single-crystalline film on the foundation.
    Type: Grant
    Filed: May 26, 1999
    Date of Patent: September 10, 2002
    Assignee: NGK Insulators, Ltd.
    Inventors: Minoru Imaeda, Takashi Yoshino
  • Patent number: 6139630
    Abstract: A suspender for suspending polycrystalline rods steadfastly and easily in a furnace for single-crystal fabrication by the recharge or additionally charged method is disclosed. The suspender includes a plate which is made of molybdenum or SiC-coated graphite and a stick perpendicularly connected to the center of the plate. Both sides of the openings are arms for supporting the polycrystalline rods, thereby suspending the polycrystalline rods vertically in the opening. Means for preventing the polycrystalline rods from slipping out of the suspender are provided at ends of the arms. Therefore, the polycrystalline rods will not slip from the opening even though the plate is inclined. The suspender is suspended in the furnace by a stick. The polycrystalline rods require few tasks to form grooves and install on the suspender, thus decreasing the process time and manufacturing cost.
    Type: Grant
    Filed: May 16, 1996
    Date of Patent: October 31, 2000
    Assignee: Komatsu Electronic Metals Co., Ltd.
    Inventors: Tatsuhiro Fujiyama, Hiroshi Inagaki, Teruhiko Uchiyama, Hidetoshi Kurogi
  • Patent number: 6051062
    Abstract: In producing an optical single crystal epitaxial film from a melt containing a transition metal on a single crystal substrate by a liquid phase epitaxial method, this process contains the steps of: annealing the film at a predetermined temperature in an ozonic atmosphere; and temperature-increasing and -decreasing to and from the predetermined temperature, wherein at least one of temperature-increasing and -decreasing steps, the film is exposed to a substantially ozone-free atmosphere.
    Type: Grant
    Filed: November 12, 1997
    Date of Patent: April 18, 2000
    Assignee: NGK Insulators, Ltd.
    Inventors: Tatsuo Kawaguchi, Minoru Imaeda
  • Patent number: 5900057
    Abstract: A planar waveguide and a process for making a planar waveguide is disclosed. The waveguide has a layer of dope host material formed on a substrate. The host material is a trivalent material such as a metal fluoride, wherein the metal is selected from the Group III B metals and the lanthanide series rare earth metals of the Mendeleevian Periodic Table. The dopant is a rare earth metal such as erbium. The waveguide has an emission spectrum with a bandwidth of about 60 nm for amplification of an optical signal at a wavelength of about 1.51 .mu.m to about 1.57 .mu.m. The waveguide is made by forming the layer of doped host material on a substrate. The film is formed by evaporating materials from two separate sources, one source for the dopant material and a separate source for the host material and forming a film of the evaporated materials on a substrate.
    Type: Grant
    Filed: June 5, 1996
    Date of Patent: May 4, 1999
    Assignee: Lucent Technologies Inc.
    Inventors: Christoph J. Buchal, Theo Siegrist
  • Patent number: 5773345
    Abstract: The present invention provides an optical link amplifier which reduces the attenuation of the optical signal passing through optical an link amplifier so as to have a fail-safe function to ensure the communication path of an optical signal even if abnormality occurs at an optical amplifier, and an wavelength multiplex laser oscillator in which the spectrum width of the laser beam is narrow and coupling coefficient with an optical fiber is increased.
    Type: Grant
    Filed: April 7, 1995
    Date of Patent: June 30, 1998
    Assignee: Fuji Xerox Co., Ltd.
    Inventor: Takeshi Ota
  • Patent number: 5654229
    Abstract: A method for providing an nonlinear, frequency converting optical QPM waveguide device by growing a first ferroelectric oxide film or layer on a second ferroelectric layer or medium wherein, in first and second embodiments, respectively, the second layer is initially provided with a periodic nonlinear coefficient pattern or a periodic pattern comprising a seed layer. During the growth of the first layer, the periodic pattern formed in the second layer, is replicated, transformed or induced into the first layer resulting in a plurality of substantially rectangular prismatic-shaped domains in the first layer having the periodic nonlinear coefficient pattern status based upon the periodic patterning of the second layer.
    Type: Grant
    Filed: April 26, 1995
    Date of Patent: August 5, 1997
    Assignee: Xerox Corporation
    Inventors: Florence E. Leplingard, John J. Kingston, Ross D. Bringans, David K. Fork, Robert G. Waarts, David F. Welch, Randall S. Geels