Abstract: A crystalline silicon ingot and a method of fabricating the same are disclosed. The crystalline silicon ingot of the invention includes multiple silicon crystal grains growing in a vertical direction of the crystalline silicon ingot. The crystalline silicon ingot has a bottom with a silicon crystal grain having a first average crystal grain size of less than about 12 mm. The crystalline silicon ingot has an upper portion, which is about 250 mm away from said bottom, with a silicon crystal grain having a second average crystal grain size of greater than about 14 mm.

Abstract: A water cooling apparatus for cooling centrifugal casting equipment that includes an upper mold and a lower mold rotating together includes a rotating shaft in which a first cooling passage is formed and to which a nozzle is provided at an end portion of the rotating shaft, and a collecting portion which surrounds a side surface of the lower mold and is installed apart from the lower mold. The lower mold is connected to the rotating shaft and includes a chamber separated from a mold space formed between the upper and lower molds in order to store cooling water injected to the nozzle. The lower mold includes at least one second cooling passage extended from the chamber toward an outer circumference surface direction, and the collecting portion receives the cooling water discharged through the second cooling passage.

Abstract: Apparatus and methods for consolidating granular silicon and determining trace elements content of the consolidated silicon are disclosed. Silicon granules are placed in a vessel, and a silicon slug of known purity is embedded at least partially in the granules. The slug is preheated to a temperature sufficient to couple with an induction heater. As the silicon slug melts, silicon granules adjacent the molten silicon also melt. The vessel passes through an induction coil to successively inductively heat and melt regions of the silicon granules from the leading end to the trailing end with each region solidifying as the molten silicon exits the induction coil to provide a multicrystalline silicon ingot. The multicrystalline silicon ingot is sliced into wafers, which are analyzed by low-temperature Fourier transform infrared spectroscopy to determine levels of trace elements in the ingot.

Abstract: Disclosed herein is a device comprising: vacuum chamber; a stage configured to receive BMG in a molten state or a BMG feedstock, configured to spin, and located in the vacuum chamber; a heater configured to melt the BMG feedstock or to keep BMG in a molten state molten; wherein the stage comprises one or more conduits therein and the conduits are configured to accommodate a cooling fluid. Also disclosed herein is a method of forming a solid BMG sheet, the method comprising: disposing BMG in a molten state onto a stage; spreading the BMG in a molten state into a sheet of BMG in a molten state by spinning the stage; cooling the sheet of BMG in a molten state to form a solid BMG sheet.

Abstract: Titanium dioxide which includes particles having a large major-axis length in a large proportion and comprises columnar particles having a satisfactory particle size distribution. A titanium compound, an alkali metal compound, and an oxyphosphorus compound are heated/fired in the presence of titanium dioxide nucleus crystals having an aspect ratio of 2 or higher to grow the titanium dioxide nucleus crystals. Subsequently, a titanium compound, an alkali metal compound, and an oxyphosphorus compound are further added and heated/fired in the presence of the grown titanium dioxide nucleus crystals. Thus, titanium dioxide is produced which comprises columnar particles having a weight-average major-axis length of 7.0-15.0 ?m and in which particles having a major-axis length of 10 ?m or longer account for 15 wt. % or more of all the particles.

Abstract: A silicon casting apparatus for producing polycrystal silicon ingot by heating a silicon melt (8) held in a mold (4) from above by a heater (3) and cooling it from below while changing the heat exchange area of a heat exchange region (HE), defined between a pedestal (5) having the mold (4) placed thereon and a bottom cooling member (6), in such a manner as to keep pace with the rise of the solid-liquid interface of the silicon melt (8), thereby causing unidirectional solidification upward along the mold (4); and a method of producing polycrystal silicon ingot using such apparatus. According to this production method, the temperature gradient given to the silicon melt (8) can be maintained at constant by adjusting the heat exchange area, so that polycrystal silicon ingot having good characteristics can be produced with good reproducibility.

Abstract: The present invention provides a photocatalyst material, which can comprise a photocatalyst with an excellent adherence to a substrate and a high photocatalytic activity, and a production method thereof. The photocatalyst material (20) obtained by reacting crystal nuclei with a sol solution containing an organic metallic compound or the like and then carrying out gelation, solidification and heat treatment has a structure where more than one basic structures (10) are fixed to the surface of the substrate (1). The basic structure consists of abase portion (2) comprising crystal nuclei fixed to the surface of the substrate (1) and a photocatalyst crystalline body (3), which connects to and is extended from the base portion (2) and has a columnar structure having a hollow portion (5) formed therein. A cylindrical substrate may be used for the substrate (1). The above photocatalytic activity is further enhanced by the formation of an interior-exposing structure (8) in a shell portion (4).

Abstract: An apparatus for producing diamond in a deposition chamber including a heat-sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measurement device positioned to measure temperature of the diamond across the growth surface of the diamond and a main process controller for receiving a temperature measurement from the noncontact temperature measurement device and controlling temperature of the growth surface such that all temperature gradients across the growth surface are less than 20° C.

Abstract: Provided is a method for crystallization and purification of a macrolide such as tacrolimus, sirolimus, pimecrolimus, or everolimus that includes the step of providing a combination of a macrolide, and a polar solvent, dopolar aprotic solvent, or hydrocarbon solvent at pH of 7 or above.

Abstract: An organic single-crystalline film useful as a functional film in various devices is produced by selecting a liquid crystal material having a good molecular alignment regularity, disposing the liquid crystal material between a pair of boundaries exerting a thickness regulating force and solidifying the liquid crystal material while imparting a molecular alignment order by phase transition from a liquid crystal phase. The liquid crystal material may preferably be a smectic liquid crystal material which provides a uniform molecular alignment inclusive of the direction of the molecular long axis in a smectic phase.

Abstract: An organic single-crystalline film useful as a functional film in various devices is produced by selecting a liquid crystal material having a good molecular alignment regularity, disposing the liquid crystal material between a pair of boundaries exerting a thickness regulating force and solidifying the liquid crystal material while imparting a molecular alignment order by phase transition from a liquid crystal phase. The liquid crystal material may preferably be a smectic liquid crystal material which provides a uniform molecular alignment inclusive of the direction of the molecular long axis in a smectic phase.

Abstract: The present invention provides a heterostructure which includes a carbon nanotube covalently linked to at least one nanocrystal. Methods for making such heterostructures, and methods for modifying the physical properties of nanotubes are also provided.

Abstract: An apparatus for producing diamond in a deposition chamber including a heat-sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measurement device positioned to measure temperature of the diamond across the growth surface of the diamond and a main process controller for receiving a temperature measurement from the noncontact temperature measurement device and controlling temperature of the growth surface such that all temperature gradients across the growth surface are less than 20° C.

Abstract: Directionally solidified, multicrystalline silicon having a low proportion of electrically active grain borders, its manufacturing and utilisation, as well as solar cells comprising said silicon and a method of manufacturing said cells.

Abstract: A material having a titanium dioxide crystalline orientation film oriented in a specific direction on a surface of a substrate is produced by spraying a vaporized titanium alkoxide onto the surface of the substrate heated under atmospheric pressure along with an inert gas as a carrier. The material having the titanium dioxide crystalline orientation film is excellent in properties such as an antimicrobial activity, a stain resistance, an ultra-hydrophilic property and the like, and is widely used as kitchen appliances such as cooking utensils, tableware and a refrigerator, tools for medical care, materials for a toilet or a toilet room, a filter of an air-conditioner, electronic parts, building materials and road-associated materials.

Abstract: For the oriented solidification of molten silicon to form an ingot in a bottomless crystallization chamber (9, 41) with a cooling body (11), which can be lowered relative to the chamber, the flat bottom surface of a seed body (25) of solid silicon is laid on the surface of the cooling body. The top surface of the seed body (25) is melted, and the ingot is grown on top of it as the cooling body is lowered by relative motion with respect to the crystallization chamber (9, 41) at a rate which is dependent on the supply of additional silicon and the solidification rate. For the purpose of producing large ingots with a coarsely crystalline to monocrystalline structure, a seed body (25) with a crystalline structure selected from the group ranging from coarsely crystalline to monocrystalline is used. Either lump silicon is placed on top of the seed body (25) and melted by induction, or molten silicon is produced in a forehearth (37) and poured onto the seed body (25). The seed body (25) has a thickness of 0.

Abstract: A method for synthesizing large, single crystal diamond comprising mixing carbon source and a hydrogen source to form a mixture. The mixture is excited and reacted to form a reactive species in a laminar plasma plume. A substrate having a diamond seed crystal is disposed in the laminar plasma plume while maintaining the diamond seed crystal at a growth temperature between 1100.degree. and 1700.degree. C. for the deposition of diamond, thereby inducing deposition of single crystal diamond on the diamond seed crystal.An apparatus for synthesizing diamond (10;15) comprising a plasma torch (30;31) for producing a laminar plasma plume (44;54). A carbon source (CH.sub.4) and a hydrogen source (H.sub.2,CH.sub.4) are excited and reacted in the laminar plasma plume (44;54) so as to form a reactive species in the laminar plasma plume (44;54).