Abstract: A method of disinfecting a surface that is contaminated with a virus or suspected of contamination with a virus, including: producing a reactive gas by forming a high-voltage cold plasma (HVCP) from a working gas with a dielectric barrier discharge (DBD) system at a voltage of 20 kV to 150 kV; transporting the reactive gas at least 1 meter away from the HVCP; followed by contacting the surface with the reactive gas.

Abstract: The present invention provides antimicrobial compositions, typically aqueous compositions, for use in the inhibition and control of microorganisms, including without limitation, viruses, bacteria, fungi and yeast, on organic and inorganic surfaces. The present invention further provides methods of using such compositions for immediate and residual inhibition, including control, of such microorganisms for a period of up to 24 hours and beyond.

Abstract: The disclosure provides a method of evaluating wellbore casing integrity for a wellbore casing configuration. In one example, the method includes providing one or more electromagnetic signals to at least one casing of the wellbore casing configuration, receiving an electromagnetic response measurement that is based on the one or more electromagnetic signals from a selected circumferential portion of the at least one casing of the wellbore casing configuration, and processing the electromagnetic response measurement to produce a metal loss calculation for the selected circumferential portion of the at least one casing of the wellbore casing configuration. A wellbore casing integrity tool and a wellbore casing integrity computing device for evaluating wellbore casing integrity are also provided.

Abstract: The invention relates to a method for producing a supported catalyst material for a fuel-cell electrode, as well as a catalyst material that can be produced using said method. In the method, first, a carbide-forming substance is deposited from the gas phase onto the carbon-based carrier material to produce a carbide-containing layer and, then, a catalytically-active precious metal or an alloy thereof from the gas phase is deposited to form a catalytic layer. By chemical reaction of the carbide-forming substance with the carbon, very stable carbide bonds are formed at the interface, while an alloy phase of the two forms at the interface between carbide-forming substance and precious metal. Overall, a very stable adhesion of the catalytic precious metal to the substrate results, whereby degradation effects are reduced, and the life of the material is extended.

Abstract: A substrate stainless steel sheet has [chemical form other than metal (Cr+Fe)]/[metal form (Cr+Fe)] of 12.0 or more and 200 or less, [chemical form other than metal (Cr+Fe)]/[metal form (Cr+Fe)] being a ratio of a total of Cr and Fe existing in chemical form other than metal to a total of Cr and Fe existing in metal form at a substrate stainless steel sheet surface.

Abstract: A capacitor having at least an anode body composed of a tungsten sintered compact and having less leakage current under high-voltage conditions and less variation in leakage current values, obtained by a production method including the steps of: compacting a tungsten powder to obtain a compression body; firing the compression body to obtain an anode body; applying voltage to the anode body, which is used as an positive electrode, in an alkaline fluid; chemically converting the surface layer of the anode body into a dielectric; optionally removing water from the anode body; and heat-treating the anode body, whose surface has been chemically converted into a dielectric, at a temperature of 100° C. or more and 260° C. or less.

Abstract: A method for controlling a speed of a machine is disclosed. The machine may have a controller in communication with an operator interface and a hydraulic system configured to control tracks of the machine. The method may include the controller setting a current value for a speed limit on the machine according to a first predetermined value; the controller providing a display on the operator interface indicating the current value of the speed limit, the current value being the first predetermined value; the controller receiving input from the operator interface to change the speed limit to a second value; the controller setting the current value for the speed limit on the machine according to the second value; and the controller changing the display to indicate the current value of the speed limit being the second value.

Abstract: Embodiments of methods of removing polymeric soils from papermaking machine surfaces including developing a solvent blend that is a solubility match for the polymeric soils as defined by a Hansen Solubility factor less than 4 for all polymeric soils, producing an aqueous cleanser comprising the solvent blend, and applying the aqueous cleanser to papermaking surfaces such that the aqueous cleanser solubilizes and removes the polymeric soils from papermaking surfaces. The solvent blend comprises at least one aromatic alcohol, at least one dibasic ester, and at least one terpene solvent.

Abstract: A zwitterionic monomer and corresponding cyclopolymerized polyzwitterion (±) (PZ) containing, on each repeating unit, both phosphonate and sulfonate functionalities. Phosphonate ester hydrolysis in PZ gave a pH-responsive polyzwitterionic acid (±) (PZA). The PZA under pH-induced transformation was converted into polyzwitterion/anion (±?) (PZAN) and polyzwitterion/dianion (±=) (PZDAN).

Abstract: Embodiments of the invention generally relate to a method for selectively etching or otherwise removing copper or other metallic contaminants from a substrate, such as a gallium arsenide wafer. In one embodiment, a method for selectively removing metallic contaminants from a substrate surface is provided which includes exposing a substrate to a peroxide clean solution, exposing the substrate to a hydroxide clean solution, and exposing the substrate to a selective etch solution containing potassium iodide, iodine, sulfuric acid, and water during a selective etch process. The substrate generally contains gallium arsenide material, such as crystalline gallium arsenide, and is usually a growth substrate for an epitaxial lift off (ELO) process. The copper or other metallic contaminants disposed on the substrate may be selectively etched at a rate of about 500 times, about 1,000 times, about 2,000 times, or about 4,000 times or greater than the gallium arsenide material.

Abstract: A warewashing detergent composition is provided for use for in cleaning of alkaline sensitive metals such as aluminum or aluminum containing alloys. The compositions include alternatives to sodium tripolyphosphate and/or other phosphorous containing raw materials, while retaining cleaning performance and corrosion prevention. According to the invention, high molecular weight polyacrylates (polyacrylic acid homopolymers) with a molecular weight of at least about 5000 are used as corrosion inhibitors and can be included for aluminum protection in a number of different detergent compositions.

Abstract: An ironing apparatus includes an ironing die and an ironing punch, an injection port for injecting gas or liquid to the metal plate at a high pressure to remove substance adhered to the metal plate therefrom, a suction port for sucking the adhered substance removed from the metal plate, and a protrusion mount portion with a protrusion for preventing dispersion of the gas or the liquid. An ironing method for ironing the metal plate having the single surface or both surfaces coated with the organic resin film includes the steps of injecting the gas or the liquid from the injection port to the metal plate at the high pressure to remove the adhered substance from the metal plate, and sucking and collecting the adhered substance removed from the metal plate from the suction port. The adhered substance such as the hair may be removed by the aforementioned invention.

Abstract: A semi-aqueous removal composition and process for selectively removing spin-on glass relative to a metal gate and/or ILD material from a microelectronic device having said material thereon. The semi-aqueous removal composition can be a fluoride-containing composition or an alkaline composition.

Abstract: A solid composition includes a polysaccharide hybrid polymer composition and a hydratable salt. In one embodiment, the polysaccharide hybrid polymer composition includes a polysaccharide residue present in an amount from approximately 5% to 90% by weight of the polysaccharide hybrid polymer composition and a residue of at least one ethylenically unsaturated monomer present in an amount from approximately 10% to 75% by weight of the polysaccharide hybrid polymer composition.

Abstract: A composition including HCl, urea, complex substituted keto-amine-hydrochloride, an alcohol, an ethoxylate, and a ketone is provided in a method for solubilizing calcium carbonate in an aqueous suspension or dispersion of calcium carbonate.

Abstract: Various dulling processes for dulling metallic surfaces are disclosed to produce or render galvanized metallic surfaces less shiny. Particular embodiments of dulling galvanized metallic surfaces, such as galvanized steel, iron, and aluminum surfaces, and processes are disclosed to treat galvanized objects for color variation or enhancement while still maintaining protection provided by the galvanized layer. The present disclosure is also directed to apparatus, product and system having dulled surfaces formed by the disclosed dulling processes.

Abstract: A composition of matter and method to remove excess material during the manufacturing of semiconductor devices includes providing a substrate; applying a metal chelator mixture to the substrate, where the metal chelator mixture comprising a metal chelator and a solvent, where the metal chelator binds to the platinum residue, to render the platinum residue soluble; and rinsing the metal chelator mixture from the substrate to remove the platinum residue from the silicide.

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 ? min?.

Abstract: An object is to reduce changes in mechanical properties of a gas turbine blade base material during repair or regeneration of a gas turbine blade. For this purpose, a gas turbine blade after being operated is washed by being immersed into a strong alkaline washing solution, and the gas turbine blade after being washed with the strong alkaline washing solution is washed with water. The gas turbine blade after being washed with water is then washed by being immersed into a weak acid washing solution, and the gas turbine blade after being washed with the weak acid washing solution is subjected to heat treatment. The gas turbine blade after the heat treatment is then immersed into a strong acid washing solution, whereby the coating formed on the surface of the gas turbine blade is removed.

Abstract: A composition includes a polysaccharide graft polymer composition. In one embodiment, the polysaccharide graft polymer composition includes a polysaccharide residue present in an amount from about 5% to about 90% by weight of the polysaccharide graft polymer composition and a residue of at least one ethylenically unsaturated monomer present in an amount from about 10% to about 75% by weight of the polysaccharide graft polymer composition.

Abstract: A composition includes a polysaccharide hybrid polymer composition. In one embodiment, the polysaccharide hybrid polymer composition includes a polysaccharide residue present in an amount from about 5% to about 90% by weight of the polysaccharide hybrid polymer composition and a residue of at least one ethylenically unsaturated monomer present in an amount from about 10% to about 75% by weight of the polysaccharide hybrid polymer composition.

Abstract: The present invention provides a metal stripping additive, composition containing the same, and method for stripping metal by using the composition. The metal stripping additive comprises a phosphate, a carbonate, and a component selected from at least one of citric acid or a derivative thereof, oxalate or a derivative thereof, malate or a derivative thereof. The metal stripping additive is used with nitric acid as the metal stripping composition of the present invention. The present method has advantages of being capable of stripping various metals, low corrosion, low toxicity, and being applicable under ambient temperature.

Abstract: This disclosure dramatically extends by a factor of 5 to 7, the effective service-life of steel shaving blades by chelating mineral molecules in common tap water, thus preventing them from accumulating and attaching to the blade surfaces.

Abstract: A method for cleaning process apparatus used for production of liquids, especially for cleaning filters, for example membrane filters. The apparatus is contacted with a solution of periodate. It is especially preferred that the cleaning process is carried out at a temperature between 15 and 95° C.

Abstract: A semiconductor substrate cleaning method includes cleaning a semiconductor substrate formed with a line-and-space pattern, rinsing the substrate, supplying the rinse water to rinse the substrate, and drying the substrate. The rinsing includes supplying deionized water and hydrochloric acid into a mixing section to mix the deionized water and the hydrochloric acid into a mixture, heating the mixture in the mixing section by a heater, detecting a pH value and a temperature of the mixture by a pH sensor and a temperature sensor respectively, adjusting an amount of hydrochloric acid supplied into the mixing section so that the rinse water has a predetermined pH value indicative of acidity, and energizing or de-energizing the heater so that the temperature of the mixture detected by the temperature sensor reaches a predetermined temperature, thereby producing the rinse water which has a temperature of not less than 70° C. and is acidic.

Abstract: One exemplary embodiment can be a process for treating an interior of equipment for an isomerization unit. Generally, the isomerization unit includes at least one of a drying zone, an isomerization reaction zone, and a stabilizer zone, for receiving a feed stream. Usually, the feed stream includes one or more C4-C8 hydrocarbons. The process can include combining an anhydrous hydrogen stream and anhydrous organic chloride stream to form a hydrogen chloride feedstock, and passing the hydrogen chloride feedstock to a reaction zone containing a catalyst including at least one of nickel, palladium, and platinum on an alumina support to form a hydrogen chloride stream, and passing the hydrogen chloride stream upstream of the isomerization reaction zone.

Abstract: A residue-removing solution for removing residues after a dry process, which includes an amine salt of a monocarboxylic acid and/or a salt of a polycarboxylic acid that forms a 7- or more-membered ring chelate with copper, and water, the residue-removing solution containing aqueous solution (A) or (B) as described herein. Also disclosed is a method for removing residues present on a semiconductor substrate after dry etching and/or ashing. Further, a method for manufacturing semiconductor devices is further disclosed, which includes subjecting a semiconductor substrate having Cu as an interconnect material, and a low dielectric constant film as an interlayer dielectric material, to dry etching and/or ashing; and bringing the processed semiconductor substrate into contact with the above residue-removing solution.

Abstract: A hard floor surface care process comprising a process of identifying, cleaning, polishing, and protecting manmade and natural stone hard floor surfaces having a single surface or multi-surface quality. The hard floor surface care process comprising an acid reactive or nonreactive hard floor surface identifying process; an emulsifying solution, agitating, and toweling cleaning process; a polishing process utilizing a lubricating solution with a polishing chemistry or pad, and a protecting process utilizing a protecting chemistry selected as a function of the identifying process.

Abstract: The present invention relates to the use of an alkyl di(lower alkyl)mono(polyoxyethylene) quaternary ammonium compound as a hydrotrope in 5 aqueous solutions for a nonionic surfactant, preferably a C8-C18-alcohol alkoxylate containing 1-20 ethyleneoxy units and 0-5 propyleneoxy units. It also relates to a composition comprising said quaternary ammonium compound and said nonionic surfactant. The cationic surfactant has the formula 10 R2+R(1)N(CH2CH2O)n H X R1 wherein R?C6-C22 alkyl; R1 and R2 are independently a C1-C4 alkyl group; n=8-25; and X? is an anion. The compositions may be used for the cleaning of hard surfaces, for example for vehicle cleaning or machine dishwashing.

Abstract: A method for decontaminating nuclear plant surfaces, which have been contaminated with alpha emitters, is carried out subsequently to a decontamination process which is aimed at the removal of oxide layers. The surfaces are treated with an aqueous solution which contains a cationic or zwitterionic surfactant and oxalic acid. At least a part of the solution, after having acted on a surface, is conducted across an ion exchanger.

Abstract: Methods and apparatus for removing condensed metal from the surfaces of metal processing chambers, such as, vacuum induction melting (VIM) furnaces having, for example, condensed Mg or Ti, are disclosed. The methods and apparatus provide a robotic arm end positioned in the furnace having a nozzle operatively connected to a source of dry ice. The robotic arm end directs a stream of dry ice particles against the surface of the furnace to displace condensed metal. The displaced metal is collected for reuse or disposal. Aspects of the invention provide a safe and automated process for cleaning process chambers and recovering metal that can typically be dangerous when performed by conventional methods.

Abstract: A process for cleaning a compound semiconductor wafer; the compound semiconductor wafer comprises, taking gallium arsenide (GaAs) as a representative, a group III-V compound semiconductor wafer. The process comprises the following steps: 1) treating the wafer with a mixture of dilute ammonia, hydrogen peroxide and water at a temperature not higher than 20° C.; 2) washing the wafer with deionized water; 3) treating the wafer with an oxidant; 4) washing the wafer with deionized water; 5) treating the wafer with a dilute acid solution or a dilute alkali solution; 6) washing the wafer with deionized water; and 7) drying the resulting wafer. The process can improve the cleanliness, micro-roughness and uniformity of the wafer surface.

Abstract: A warewashing detergent composition is provided for use for in cleaning of alkaline sensitive metals such as aluminum or aluminum containing alloys. The compositions include alternatives to sodium tripolyphosphate and/or other phosphorous containing raw materials, while retaining cleaning performance and corrosion prevention. According to the invention, high molecular weight polyacrylates (polyacrylic acid homopolymers) with a molecular weight of at least about 5000 are used as corrosion inhibitors and can be included for aluminum protection in a number of different detergent compositions.

Abstract: A composition includes a polysaccharide graft polymer composition and 2-phosphonobutane-1,2,4-tricarboxylic acid. In one embodiment, the polysaccharide graft polymer composition includes a polysaccharide residue present in an amount from approximately 5% to approximately 90% by weight of the polysaccharide graft polymer composition and a residue of acrylic acid, methacrylic acid or a combination thereof present in an amount from approximately 10% to approximately 75% by weight of the polysaccharide graft polymer composition.

Abstract: A method of simultaneously cleaning and disinfecting an industrial water system is described and claimed. The method involves the addition to the water of the industrial water system of a Compound selected from the group consisting of the alkali salts of chlorite and chlorate and mixtures thereof; and an acid, followed by allowing the water in the industrial water system to circulate for several hours. The reaction of the alkali salts of chlorite and chlorate and acid produces chlorine dioxide in-situ in the water of the industrial water system. The chlorine dioxide kills microorganisms and the acid acts to remove deposits upon the water-contact surfaces of the equipment. This cleaning and disinfecting method works in a variety of industrial water systems including cooling water systems.

Abstract: A system and method for removing polymer residue from around a metal gate structure formed on a surface of a substrate during a post-etch cleaning operation includes determining a plurality of process parameters associated with the metal gate structure and the polymer residue to be removed. A plurality of fabrication layers define the metal gate structure and the process parameters define characteristics of the fabrication layers and the polymer residue. A first cleaning chemistry and second cleaning chemistry are identified and a plurality of application parameters associated with the first and second cleaning chemistries are defined based on the process parameters. The first and second application chemistries are applied sequentially in a controlled manner using the application parameters to substantial remove the polymer residue while preserving the structural integrity of the gate structure.

Abstract: Cleaning processes for cleaning semiconductor devices or semiconductor tooling during manufacture thereof generally include contacting the semiconductor devices or semiconductor tooling with an antioxidant to form an insoluble adduct followed by solubilizing the adduct with a basic aqueous cleaning solution.

Abstract: A composition includes an anionic polysaccharide hybrid polymer composition and 2-phosphonobutane-1,2,4-tricarboxylic acid. In one embodiment, the polysaccharide hybrid polymer composition includes a polysaccharide residue present in an amount from approximately 5% to approximately 90% by weight of the polysaccharide hybrid polymer composition and a residue of at least one ethylenically unsaturated monomer present in an amount from approximately 10% to approximately 75% by weight of the polysaccharide hybrid polymer composition.

Abstract: A method for removing corrosion products from a system, the method including: adjusting the system temperature to between 115° F. to 212° F.; injecting a cleaning dissolution solvent into the system; injecting a gas into the system after the system is filled with the cleaning dissolution solvent; the gas mixing with the solvent in the system; draining the solvent from the system after a predetermined period of time of dissolution; injecting a passivation composition into the system; injecting a gas into the system, the gas mixing the passivation composition; draining the system of the composition after a predetermined period of time of passivation; rinsing the system with a low volume solution; and rinsing the system at with a full volume solution.

Abstract: Improved methods for stripping photoresist and removing etch-related residues from dielectric materials are provided. In one aspect of the invention, methods involve removing material from a dielectric layer using a hydrogen-based etch process employing a weak oxidizing agent and fluorine-containing compound. Substrate temperature is maintained at a level of about 160° C. or less, e.g., less than about 90° C.

Abstract: In one embodiment, a metal loss inhibitor concentrate is provided which contains water, (A) a component of dissolved organic compounds and polymers that contain at least two hydroxy moieties per molecule and an average of at least 0.4 hydroxy moieties per carbon atom; (B) a thiourea component; and (C) a dissolved component containing aryl and quaternary ammonium moieties; and, optionally: (D) a wetting agent, such as a component of an ethoxylate of an alcohol. Such solutions form useful inhibitor concentrates when combined with aqueous chelating cleaning solutions, wherein such solutions, when contacted with a metal surface, are effective in removing scale, smut and other deposits from the metal surface but exhibit a reduced tendency to attack or unduly etch the metal itself, or to inhibit the subsequent desired oxidation and dissolution of metallic copper deposits.

Abstract: The present invention relates to the use of at least one alkane sulphonic acid, with formula R—SO3H, where R represents a saturated, linear or branched hydrocarbon chain, comprising 1 to 4 atoms of carbon for removing rust from all types of surface, in particular from metal surfaces, specifically iron, steel and others. The invention also relates to a method for cleaning rust from all types of surfaces using at least one alkane sulphonic acid.

Abstract: A hard floor surface care process comprising a process of identifying, cleaning, polishing, and protecting manmade and natural stone hard floor surfaces having a single surface or multi-surface quality. The hard floor surface care process comprising an acid reactive or nonreactive hard floor surface identifying process; an emulsifying solution, agitating, and toweling cleaning process; a polishing process utilizing a lubricating solution with a polishing chemistry or pad, and a protecting process utilizing a protecting chemistry selected as a function of the identifying process.

Abstract: Provided is a liquid processing apparatus in which a target substrate is horizontally held on a substrate holding unit and rotated around a vertical shaft, and the chemicals are supplied from a chemical supplying unit to the bottom surface of the target substrate that is rotating. In particular, the liquid processing apparatus performs a first step in which the chemicals are supplied to the target substrate while rotating the target substrate at a first rotation speed, a second step in which the supply of the chemicals is halted and the chemicals are thrown off by rotating the target substrate at a second rotation speed higher than the first rotation speed, and a third step in which the rinse liquid is supplied to the target substrate while rotating the target substrate at a third rotation speed equal to or lower than the first rotation speed.

Abstract: A system and method are provided for reclaiming an enriched radioisotope starting material from a target body. The system and method enable reclaiming the starting material in a relatively short time (e.g., several hours) after the target body's bombardment with energetic particles, greatly simplifying the target body's chemical processing, as well as reducing the cost of such processing (e.g., reducing the need for costly long-term storage). Specifically, a chemical protective layer is disposed between a radioisotope starting material and a base material of the target body. After the target body is irradiated with a suitable source (e.g., particle accelerator), then the irradiated radioisotope starting material can be removed without removing the base material due to the protection provided by the chemical protective layer. The system and method also enable the operator to obtain three different radioisotopes in a single bombardment of the target body, further reducing cost of radioisotope production.

Abstract: A method for cleaning a filtering membrane, contaminated by contaminants including inorganic and organic materials during a fluid-filtering process, is disclosed, the method comprises cleaning the filtering membrane by using a first cleaning solution of pH 6˜9 so as to remove the organic material from the filtering membrane; and cleaning the filtering membrane by using a second acid cleaning solution so as to remove the inorganic material from the filtering membrane, wherein the cleaning method of the present invention uses the first cleaning solution having pH 6˜9 instead of a strong-alkaline cleaning solution so as to prevent the filtering membrane from being damaged, and also uses the cleaning solution maintained at a relatively low temperature instead of hot water so as to improve economical efficiency by reduction of energy consumption.

Abstract: Disclosed is a method for drying a plate-like article; the method including rinsing with an aqueous rinsing liquid with subsequent rinsing with an organic solvent, wherein the organic solvent has a water content of below 20 mass-% wherein the organic solvent is supplied at a solvent temperature, which is at least 30° C. and not higher than 60° C.

Abstract: A warewashing detergent composition is provided for use for in cleaning of alkaline sensitive metals such as aluminum or aluminum containing alloys. The compositions include alternatives to sodium tripolyphosphate and/or other phosphorous containing raw materials, while retaining cleaning performance and corrosion prevention. According to the invention, a synergistic combination of polyacrylic and polymaleic polymers is used as corrosion inhibitors in traditional alkaline detergent compositions.

Abstract: A process for quickly removing hydrocarbon contaminants and noxious gases in a safe and effective manner from catalytic reactors, other media packed process vessels and associated equipment in the vapor phase without using steam. The cleaning agent contains one or more solvents, such as terpenes or other organic solvents. The cleaning agent is injected into contaminated equipment, along with a carrier gas, in the form of a cleaning vapor.

Abstract: Compositions comprising an alkanesulfonic acid and an organic nitrogenous base, and related methods of use.