Ion Implanted Patents (Class 148/900)
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Patent number: 7648586Abstract: In a surface layer of an ultra-low carbon stainless steel comprising a seal function layer in the surface layer, an ion such as a nitrogen ion is implanted to form the seal function layer. Since the ultra-low carbon stainless steel comprising the seal function layer is excellent in elasticity, sealing properties, peelability and abrasion resistance, it can make a seal material which has been used unnecessary, and can realize all stainless-made products such as seal and joint system parts.Type: GrantFiled: July 30, 2003Date of Patent: January 19, 2010Assignee: National Institute of Advanced Industrial & TechnologyInventors: Yasushi Iwata, Akiyoshi Chayahara
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Patent number: 6962025Abstract: A method of modifying a thermal barrier assembly that includes a channel, the method including exposing a surface of a channel to a plasma that includes metal moieties and depositing the metal moieties on the surface of the channel.Type: GrantFiled: May 29, 2001Date of Patent: November 8, 2005Assignee: H.B. Fuller Licensing & Financing, Inc.Inventor: Nathanael Hill
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Patent number: 6814927Abstract: A nanostructured tungsten carbide bulk material, sintered from tungsten carbide and metal such as cobalt nano-powders, comprises a tungsten carbide and a metallic binder such as cobalt phases. The tungsten carbide phase has nanostructures comprising a plurality of dislocations, twins, stacking faults, dislocation cells, nano-subgrains with preferred orientation or texture, or a combination thereof.Type: GrantFiled: November 15, 2002Date of Patent: November 9, 2004Assignee: Industrial Technology Research InstituteInventors: Shih-Chieh Liao, Song-Wein Hong, Geoffrey Wen Tai Shuy, Jin-Ming Chen, Thiraphat Vilaithong, Lang Deng Yu
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Patent number: 6740420Abstract: A method for improving the electrical conductivity of a substrate of metal, metal alloy or metal oxide comprising depositing a small or minor amount of metal or metals from Group VIIIA metals (Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt) or from Group IA metals (Cu, Ag, Au) on a substrate of metal, metal alloys and/or metal oxide from Group IVA metals (Ti, Zr, Hf), Group VA metals (V, Nb, Ta), Group VIA metals (Cr, Mo, W) and Al, Mn, Ni and Cu and then directing a high energy beam onto the substrate to cause an intermixing of the deposited material with the native oxide of the substrate metal or metal alloy. The native oxide layer is changed from electrically insulating to electrically conductive. The step of depositing can be carried out, for example, by ion beam assisted deposition, electron beam deposition, chemical vapor deposition, physical vapor deposition, plasma assisted, low pressure plasma and plasma spray deposition and the like.Type: GrantFiled: April 11, 2003Date of Patent: May 25, 2004Assignee: Wilson Greatbatch Technologies, Inc.Inventors: Barry Muffoletto, Ashish Shah, Donald H. Stephenson
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Publication number: 20020106528Abstract: A method for fabricating a reactive solder or braze includes forming a metallic matrix with an interior region and surface regions by actively providing a higher concentration of reactive atoms to the interior region than to the surface regions.Type: ApplicationFiled: January 15, 2002Publication date: August 8, 2002Inventors: Sungho Jin, Hareesh Mavoori, Ainissa G. Ramirez
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Publication number: 20020102426Abstract: A method of ion implantation using oxygen backfill and a modified surface layer formed therefrom are provided. The method of ion implantation includes the steps of placing a substrate metal in an ion implantation vacuum chamber, introducing oxygen into the ion implantation vacuum chamber and directing a beam of ions at the substrate metal. The modified surface includes a substrate metal and implanted atoms at a surface of the substrate metal. The implanted atoms are integrated with the substrate metal. The substrate metal has an implanted atom concentration of at least 5 atomic % to a depth of over 250 Å.Type: ApplicationFiled: November 1, 2001Publication date: August 1, 2002Inventors: Bruce D. Sartwell, Paul M. Natishan
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Patent number: 6314764Abstract: A method of manufacturing a 1-inch diameter glass substrate for a magnetic disc in which a plate glass is press molded using a mold formed of a super-hard material and having a surface of a prescribed roughness. Ion implantation using nitrogen ions is performed on the surface of the mold, after which ion implantation using palladium ions, platinum ions, and carbon ions is performed in the order given. Finally, the surface of the mold is coated with a graphite or amorphous diamond-like carbon coating.Type: GrantFiled: February 16, 2001Date of Patent: November 13, 2001Assignee: Saatec Engineering CorporationInventor: Yasuaki Sakamoto
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Patent number: 6314763Abstract: A method of manufacturing a 2-5 inch diameter glass substrate for a magnetic disc in which a plate glass is press molded using a mold formed of a super-hard material and having a surface of a prescribed roughness. Ion implantation using nitrogen ions is performed on the surface of the mold, after which ion implantation using palladium ions, platinum ions, and carbon ions is performed in the order given. Finally, the surface of the mold is coated with a graphite or amorphous diamond-like carbon coating.Type: GrantFiled: February 16, 2001Date of Patent: November 13, 2001Assignee: Saatec Engineering CorporationInventor: Yasuaki Sakamoto
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Patent number: 6200689Abstract: The present invention includes a method of repairing an annular metallic article and the repaired article itself which has an axially extending annular support and a projection generally radially extending therefrom. The projection has an associated operating radial height as measured from a radially facing annular first surface of the support and an associated shape. An upper portion of the projection is removed forming a stub extending away from the first surface and having a bonding surface at a stub end spaced apart from the first surface. A metallic material is metallurgically bonded to the bonding surface forming an annular heat affected zone in the stub bounded by the bonding surface. A first portion of the metallic material is removed to restore the projection to the operating height and shape. At least one annular outer surface of the tooth extending over at least a portion of the heat affected zone is laser shock peened, preferably after the first portion of the metallic material is removed.Type: GrantFiled: October 14, 1998Date of Patent: March 13, 2001Assignee: General Electric CompanyInventors: Stephen J. Ferrigno, Kevin G. McAllister, Seetharamaiah Mannava
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Patent number: 6136385Abstract: A surface reforming method of a metal product, wherein a platinum film is formed on the surface of a metal product by injecting onto that surface a nitrogen ion, a carbon ion and a platinum ion in that order, and then injected onto said platinum film a second platinum ion with the aim of improving the exfoliation resistance of the platinum film being formed on the metal surface, and the abrasion resistance of the surface.Type: GrantFiled: July 29, 1999Date of Patent: October 24, 2000Assignee: Saatec Engineering CorporationInventor: Yasuaki Sakamoto
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Patent number: 6094260Abstract: A method for quality assurance of a laser shock peening process uses interferometry to form a fringe image from first and second interferograms of unstressed and stressed laser shock peened patches respectively of a workpiece. The fringe image may then be compared to a predetermined correlation of fringe images for indicating quality assurance. Stressing the laser shock peened patch may include loading the production and test workpieces during the production of the first and second images by interferometry while the production and test workpieces are fixtured. The loading may be done by heating, twisting, or bending of at least a portion of the production and test workpieces. The comparing of the production images of fringes may include comparing fringe characteristics of the laser shock peened patches on the production workpieces laser against fringe characteristics of the predetermined correlation.Type: GrantFiled: August 12, 1998Date of Patent: July 25, 2000Assignee: General Electric CompanyInventors: Todd J. Rockstroh, Wilbur D. Scheidt
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Patent number: 6080491Abstract: A substrate for an electrophotographic photoconductor having an anodic oxidation film on the surface is subjected to two-step sealing treatment in which the substrate is sealing treated with nickel fluoride as a sealing agent, and then with nickel acetate as a sealing agent. Therefore, an electrophotographic photoconductor using the substrate for an electrophotographic photoconductor is small in charge potential difference between the first turn and the second turn and after, and does not generate a fogged image defect or the like even without preliminary charging before printing.Type: GrantFiled: July 9, 1998Date of Patent: June 27, 2000Assignee: Fuji Electric Co., Ltd.Inventors: Ikuo Takaki, Hidetaka Yahagi, Masaaki Sakaguchi, Yutaka Nakagishi, Osamu Kimura
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Patent number: 5951790Abstract: A method for quality assurance of a laser process and more particularly a laser shock peening process that uses a test coupon having a deflection formed by a laser firing. The test coupon is from a metallic strip having opposite first and second sides that generally define a plane of the strip and the strip includes a laser shock peened patch of the strip that has first and second laser shock peened surfaces on the first and second sides, respectively, first and second laser shocked regions having deep compressive residual stresses imparted by the laser shock peening extending into the strip from the first and second laser shock peened surfaces, respectively, and a deflection of a portion of the strip from a position of the portion before the laser shock peening. The deflection is formed by the laser shock peening such that at least a part and preferably substantially all of the deflection lies in the plane of the strip and the test coupon preferably includes an indicating means to indicate the deflection.Type: GrantFiled: June 26, 1998Date of Patent: September 14, 1999Assignee: General Electric CompanyInventors: Seetharamaiah Mannava, William D. Cowie, P. Kennard Wright, III, Robert D. McClain
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Patent number: 5520966Abstract: A process for increasing the corrosion resistance of honeycomb core panel construction by using an ion beam enhanced deposition. In one aspect of the invention, molybdenum ions are embedded a predetermined depth into the front and back surfaces of a honeycomb-shaped core. The ions interact with the core metal to form an aluminum-molybdenum alloy which is impervious to corrosion. A thin film coating of metal simultaneously is produced on the surface of the metal-ion embedded core metal. The process also may be used to embed ions into the outer skin layers to achieve enhanced corrosion resistance.Type: GrantFiled: July 26, 1994Date of Patent: May 28, 1996Assignee: Northrop Grumman CorporationInventor: Michael G. Kornely, Jr.
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Patent number: 5389195Abstract: The present invention is a surface modification process which provides a means of rapidly heating a thin layer of a polymer surface or a thin coating of material on a coated substrate and various surfaces produced by such a process.Type: GrantFiled: March 7, 1991Date of Patent: February 14, 1995Assignee: Minnesota Mining and Manufacturing CompanyInventors: Andrew J. Ouderkirk, Douglas S. Dunn, Edward C. Yu, Susan N. Bohlke
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Patent number: 5199999Abstract: A method for ion implantation of relatively high concentrations of alloying elements into a metal target without sputtering the target, in which the target is precoated with a layer of preselected thickness of a light, low sputtering yield element such as carbon, which is ablated during the ion implantation process.Type: GrantFiled: December 18, 1991Date of Patent: April 6, 1993Assignee: Queen's UniversityInventors: Lynann Clapham, James L. Whitton
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Patent number: 5176760Abstract: A hard wear-resistant and corrosion- and oxidation-resistant stainless steel article is made by precision machining a work piece of approximately the size and shape of the desired article, then subjecting the resulting cold worked article to ion bombardment until the article is nitrided to a depth of about 0.002 inch, and finally subjecting the nitrided article to an atmosphere of argon and nitrogen and oxygen until the resulting ion bombardment has penetrated to a depth in the article surface of about 0.0001 inch.Type: GrantFiled: November 22, 1991Date of Patent: January 5, 1993Inventor: Albert Young
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Patent number: 4968006Abstract: An improved method and an apparatus for the ion implantation of spherical surfaces are disclosed. The method includes the provision of a revised fixture by which a plurality of spherical workpieces are presented to a large area ion beam in a way that their entire respective spherical surfaces are uniformly ion implanted to improve their surface characteristics. The fixture includes a disc mounted for motion about two axes normal to each other, a plurality of holes formed in a the disc loosely to accommodate therein a plurality of spherical workpieces, each of the plurality of holes formed with a spherical bottom and having a cleaning orifice, cooling means disposed on one side of the disc, a thermocouple operatively mounted in association with the disc, and a cover plate mounted on a second side of the disc and provided with a plurality of apertures concentric with the plurality of holes formed in the disc.Type: GrantFiled: July 21, 1989Date of Patent: November 6, 1990Assignee: Spire CorporationInventor: Richard W. Oliver
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Patent number: 4952446Abstract: This invention relates to ultra-thin semiconductor films which can be in the submicron range formed from semiconductor materials such as silicon, germanium and gallium arsenide. The films are formed by creating a thin slightly damaged surface on the polished reverse side of a film (e.g., a wafer) of the semiconductor by low dose ion implantation and then etching the semiconductor material on the front side of the film to remove the semiconductor material down to the ion implanted damaged layer. While the implanted ions can be chosen from functionally desirable ions which upon annealing remain in the film to alter the original electrical characteristics, the implanted ions can also be chosen so that upon annealing, the resultant ultra-thin semiconductor film has the same electrical characteristics as the original semiconductor material.The ion implantation changes the etching characteristics of the ion implanted layer.Type: GrantFiled: December 14, 1988Date of Patent: August 28, 1990Assignee: Cornell Research Foundation, Inc.Inventors: Kevin C. Lee, Charles A. Lee, John Silcox
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Patent number: 4946735Abstract: This invention relates to ultra-thin semiconductor films which can be in the submicron range formed from semiconductor materials such as silicon, germanium and gallium aresenide. The films are formed by creating a thin slightly damaged surface on the polished reverse side of a film (e.g., a wafer) of the semiconductor by low dose ion implantation and then etching the semiconductor material on the front side of the film to remove the semiconductor material down to the ion implanted damaged layer. While the implanted ions can be chosen from functionally desirable ions which upon annealing remain in the film to alter the original electrical characteristics, the implanted ions can also be chosen so that upon annealing, the resultant ultra-thin semiconductor film has the same electrical characteristics as the original semiconductor material.The ion implantation changes the etching characteristics of the ion implanted layer.Type: GrantFiled: December 14, 1988Date of Patent: August 7, 1990Assignee: Cornell Research Foundation, Inc.Inventors: Kevin C. Lee, Charles A. Lee, John Silcox
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Patent number: 4915746Abstract: A method of forming internal high temperature barriers in structural metals is provided. The barriers prevent movement of boundaries and dislocations inside the structural metal, and make strutural metals creep resistant at high homologous temperatures. The method comprises providing a first layer of strutural metal, implanting ions into this layer, and layering a second layer of structural metal on the ion-implanted first layer to form a laminated product. The steps of implanting and layering can be repeated an arbitrary number of times.Type: GrantFiled: August 15, 1988Date of Patent: April 10, 1990Inventor: Gerhard E. Welsch
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Patent number: 4894098Abstract: Ion implantation is conducted in a desired area(s) of the surface of a magnetic layer, and annealing of the layer is carried out to control the composition in that desired area(s). The control of the composition may be facilitated by applying a one-directional or rotating magnetic field during ion implantation. In preparing a magnetic head, a portion of a magnetic pole at least on one side thereof in close proximity to a magnetic recording medium is formed into an iron or iron-based magnetic alloy film, at least part of which is subjected to ion implantation and annealing.Type: GrantFiled: July 28, 1988Date of Patent: January 16, 1990Assignee: Hitachi, Ltd.Inventors: Shigekazu Otomo, Noriyuki Kumasaka, Ryo Imura, Ryo Suzuki, Yutaka Sugita
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Patent number: 4891183Abstract: A method of improving the elevated temperature oxidation resistance of non-iron base alloys, especially nickel and cobalt base alloys by the addition of dopants to the oxide scale formed on a broad range of non-iron base alloys such as wrought or cast nickel or cobalt base heat resistant alloys.Type: GrantFiled: December 3, 1986Date of Patent: January 2, 1990Assignee: Chrysler Motors CorporationInventor: John M. Corwin
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Patent number: 4872922Abstract: A method and an apparatus for the ion implantation of spherical surfaces are disclosed. The method essentially includes the provision of a fixture by which a plurality of spherical workpieces are presented to a large area ion beam in a way that their entire respective spherical surfaces are uniformly ion implanted to improve their surface characteristics. The fixture basically includes a solid disc mounted for motion about two axes normal to each other, a plurality of cages formed in a first surface of the disc loosely to accommodate therein a plurality of spherical workpieces, cooling means disposed on a second surface of the disc, and a cover plate and/or mask mounted on the first surface of the disc and provided with a plurality of apertures concentric with the plurality of cages formed in the disc.Type: GrantFiled: March 11, 1988Date of Patent: October 10, 1989Assignee: Spire CorporationInventors: Stephen N. Bunker, Piran Sioshansi
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Patent number: 4863810Abstract: A method of providing corrosion resistant substrates having an amorphous metallic alloy coating thereon. The method comprises depositing refractory and transition elements, such as Ni, Nb, Ti and Cr, onto the substrate to provide a crystalline metallic layer thereon which is then irradiated to convert the layer into an amorphous metallic coating on the substrate. The coated substrate displays a corrosion resistance which is at least about four orders of magnitude greater than for the uncoated substrate in both lN HNO.sub.3 and 0.1 N NaCl aqueous solutions.Type: GrantFiled: September 21, 1987Date of Patent: September 5, 1989Assignee: Universal Energy Systems, Inc.Inventors: Rabi S. Bhattacharya, Amarendra K. Rai, Peter P. Pronko, Charbel Raffoul
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Patent number: 4743308Abstract: A metal alloy with a treated surface and the process of effecting the treated surface are disclosed whereby its ion release under static, stress and crevice corrosion and corrosive wear conditions is reduced. The metal alloy preferably is an ASTM F-75 Co-Cr-Mo alloy. The preferred process includes providing a workpiece formed of such a metal alloy with a coating of biologically compatible elements, such as a noble metal and then exposing the thus coated surface thereof to bombardment by an ion beam, whereby a plurality of noble metal atoms, together with a plurality of ions from the beam, are driven into the surface of the workpiece a certain distance. Another preferred process includes the direct ion implantation of a workpiece with biocompatible elements, such as nitrogen, tantalum and inert gas ions. Preferably, such a workpiece finds application as an orthopaedic implant.Type: GrantFiled: January 20, 1987Date of Patent: May 10, 1988Assignee: Spire CorporationInventors: Piran Sioshansi, Ward D. Halverson
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Patent number: 4724016Abstract: The present invention is directed to a method for increasing the wear and corrosion resistance of zirconium and zirconium alloys by ion implantation. In particular the present invention is directed to the ion implantation of nitrogen and/or carbon for the purpose of increasing wear resistance; and the ion implantation of arsenic, carbon, chromium, nitrogen, tin, phosphorus or combinations thereof for the purpose of increasing the corrosion resistance.Type: GrantFiled: September 19, 1985Date of Patent: February 9, 1988Assignee: Combustion Engineering, Inc.Inventor: Andrew J. Anthony
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Patent number: 4693760Abstract: A process for preventing surface discoloration in orthopedic implants made of titanium and its alloys is disclosed. Such surface discoloration is apt to occur when the orthopedic implants are ion implanted to improve their wear characteristics. The process essentially includes exposing all fixtures and shields, made of pure titanium, located in an implant chamber, to an ion beam, creating a vacuum within the chamber not exceeding about 5.times.10.sup.-5 torr, introducing an orthopedic implant within the chamber to be directly exposed to the beam, and reducing the ion beam current power density so as not to exceed about 1.0 watt/cm.sup.2. Exposing the fixtures and shields to the ion beam first serves to remove surface contamination therefrom, followed by forming a surface layer thereon. This surface layer effectively lowers the sputtering coefficient of the fixtures and shields, and thus reduces the amount of material sputtered from areas exposed to the ion beam to unexposed areas.Type: GrantFiled: May 12, 1986Date of Patent: September 15, 1987Assignee: Spire CorporationInventor: Piran Sioshansi