Ion Implanted Patents (Class 148/900)
  • Patent number: 7648586
    Abstract: In a surface layer of an ultra-low carbon stainless steel comprising a seal function layer in the surface layer, an ion such as a nitrogen ion is implanted to form the seal function layer. Since the ultra-low carbon stainless steel comprising the seal function layer is excellent in elasticity, sealing properties, peelability and abrasion resistance, it can make a seal material which has been used unnecessary, and can realize all stainless-made products such as seal and joint system parts.
    Type: Grant
    Filed: July 30, 2003
    Date of Patent: January 19, 2010
    Assignee: National Institute of Advanced Industrial & Technology
    Inventors: Yasushi Iwata, Akiyoshi Chayahara
  • Patent number: 6962025
    Abstract: A method of modifying a thermal barrier assembly that includes a channel, the method including exposing a surface of a channel to a plasma that includes metal moieties and depositing the metal moieties on the surface of the channel.
    Type: Grant
    Filed: May 29, 2001
    Date of Patent: November 8, 2005
    Assignee: H.B. Fuller Licensing & Financing, Inc.
    Inventor: Nathanael Hill
  • Patent number: 6814927
    Abstract: A nanostructured tungsten carbide bulk material, sintered from tungsten carbide and metal such as cobalt nano-powders, comprises a tungsten carbide and a metallic binder such as cobalt phases. The tungsten carbide phase has nanostructures comprising a plurality of dislocations, twins, stacking faults, dislocation cells, nano-subgrains with preferred orientation or texture, or a combination thereof.
    Type: Grant
    Filed: November 15, 2002
    Date of Patent: November 9, 2004
    Assignee: Industrial Technology Research Institute
    Inventors: Shih-Chieh Liao, Song-Wein Hong, Geoffrey Wen Tai Shuy, Jin-Ming Chen, Thiraphat Vilaithong, Lang Deng Yu
  • Patent number: 6740420
    Abstract: A method for improving the electrical conductivity of a substrate of metal, metal alloy or metal oxide comprising depositing a small or minor amount of metal or metals from Group VIIIA metals (Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt) or from Group IA metals (Cu, Ag, Au) on a substrate of metal, metal alloys and/or metal oxide from Group IVA metals (Ti, Zr, Hf), Group VA metals (V, Nb, Ta), Group VIA metals (Cr, Mo, W) and Al, Mn, Ni and Cu and then directing a high energy beam onto the substrate to cause an intermixing of the deposited material with the native oxide of the substrate metal or metal alloy. The native oxide layer is changed from electrically insulating to electrically conductive. The step of depositing can be carried out, for example, by ion beam assisted deposition, electron beam deposition, chemical vapor deposition, physical vapor deposition, plasma assisted, low pressure plasma and plasma spray deposition and the like.
    Type: Grant
    Filed: April 11, 2003
    Date of Patent: May 25, 2004
    Assignee: Wilson Greatbatch Technologies, Inc.
    Inventors: Barry Muffoletto, Ashish Shah, Donald H. Stephenson
  • Publication number: 20020106528
    Abstract: A method for fabricating a reactive solder or braze includes forming a metallic matrix with an interior region and surface regions by actively providing a higher concentration of reactive atoms to the interior region than to the surface regions.
    Type: Application
    Filed: January 15, 2002
    Publication date: August 8, 2002
    Inventors: Sungho Jin, Hareesh Mavoori, Ainissa G. Ramirez
  • Publication number: 20020102426
    Abstract: A method of ion implantation using oxygen backfill and a modified surface layer formed therefrom are provided. The method of ion implantation includes the steps of placing a substrate metal in an ion implantation vacuum chamber, introducing oxygen into the ion implantation vacuum chamber and directing a beam of ions at the substrate metal. The modified surface includes a substrate metal and implanted atoms at a surface of the substrate metal. The implanted atoms are integrated with the substrate metal. The substrate metal has an implanted atom concentration of at least 5 atomic % to a depth of over 250 Å.
    Type: Application
    Filed: November 1, 2001
    Publication date: August 1, 2002
    Inventors: Bruce D. Sartwell, Paul M. Natishan
  • Patent number: 6314764
    Abstract: A method of manufacturing a 1-inch diameter glass substrate for a magnetic disc in which a plate glass is press molded using a mold formed of a super-hard material and having a surface of a prescribed roughness. Ion implantation using nitrogen ions is performed on the surface of the mold, after which ion implantation using palladium ions, platinum ions, and carbon ions is performed in the order given. Finally, the surface of the mold is coated with a graphite or amorphous diamond-like carbon coating.
    Type: Grant
    Filed: February 16, 2001
    Date of Patent: November 13, 2001
    Assignee: Saatec Engineering Corporation
    Inventor: Yasuaki Sakamoto
  • Patent number: 6314763
    Abstract: A method of manufacturing a 2-5 inch diameter glass substrate for a magnetic disc in which a plate glass is press molded using a mold formed of a super-hard material and having a surface of a prescribed roughness. Ion implantation using nitrogen ions is performed on the surface of the mold, after which ion implantation using palladium ions, platinum ions, and carbon ions is performed in the order given. Finally, the surface of the mold is coated with a graphite or amorphous diamond-like carbon coating.
    Type: Grant
    Filed: February 16, 2001
    Date of Patent: November 13, 2001
    Assignee: Saatec Engineering Corporation
    Inventor: Yasuaki Sakamoto
  • Patent number: 6200689
    Abstract: The present invention includes a method of repairing an annular metallic article and the repaired article itself which has an axially extending annular support and a projection generally radially extending therefrom. The projection has an associated operating radial height as measured from a radially facing annular first surface of the support and an associated shape. An upper portion of the projection is removed forming a stub extending away from the first surface and having a bonding surface at a stub end spaced apart from the first surface. A metallic material is metallurgically bonded to the bonding surface forming an annular heat affected zone in the stub bounded by the bonding surface. A first portion of the metallic material is removed to restore the projection to the operating height and shape. At least one annular outer surface of the tooth extending over at least a portion of the heat affected zone is laser shock peened, preferably after the first portion of the metallic material is removed.
    Type: Grant
    Filed: October 14, 1998
    Date of Patent: March 13, 2001
    Assignee: General Electric Company
    Inventors: Stephen J. Ferrigno, Kevin G. McAllister, Seetharamaiah Mannava
  • Patent number: 6136385
    Abstract: A surface reforming method of a metal product, wherein a platinum film is formed on the surface of a metal product by injecting onto that surface a nitrogen ion, a carbon ion and a platinum ion in that order, and then injected onto said platinum film a second platinum ion with the aim of improving the exfoliation resistance of the platinum film being formed on the metal surface, and the abrasion resistance of the surface.
    Type: Grant
    Filed: July 29, 1999
    Date of Patent: October 24, 2000
    Assignee: Saatec Engineering Corporation
    Inventor: Yasuaki Sakamoto
  • Patent number: 6094260
    Abstract: A method for quality assurance of a laser shock peening process uses interferometry to form a fringe image from first and second interferograms of unstressed and stressed laser shock peened patches respectively of a workpiece. The fringe image may then be compared to a predetermined correlation of fringe images for indicating quality assurance. Stressing the laser shock peened patch may include loading the production and test workpieces during the production of the first and second images by interferometry while the production and test workpieces are fixtured. The loading may be done by heating, twisting, or bending of at least a portion of the production and test workpieces. The comparing of the production images of fringes may include comparing fringe characteristics of the laser shock peened patches on the production workpieces laser against fringe characteristics of the predetermined correlation.
    Type: Grant
    Filed: August 12, 1998
    Date of Patent: July 25, 2000
    Assignee: General Electric Company
    Inventors: Todd J. Rockstroh, Wilbur D. Scheidt
  • Patent number: 6080491
    Abstract: A substrate for an electrophotographic photoconductor having an anodic oxidation film on the surface is subjected to two-step sealing treatment in which the substrate is sealing treated with nickel fluoride as a sealing agent, and then with nickel acetate as a sealing agent. Therefore, an electrophotographic photoconductor using the substrate for an electrophotographic photoconductor is small in charge potential difference between the first turn and the second turn and after, and does not generate a fogged image defect or the like even without preliminary charging before printing.
    Type: Grant
    Filed: July 9, 1998
    Date of Patent: June 27, 2000
    Assignee: Fuji Electric Co., Ltd.
    Inventors: Ikuo Takaki, Hidetaka Yahagi, Masaaki Sakaguchi, Yutaka Nakagishi, Osamu Kimura
  • Patent number: 5951790
    Abstract: A method for quality assurance of a laser process and more particularly a laser shock peening process that uses a test coupon having a deflection formed by a laser firing. The test coupon is from a metallic strip having opposite first and second sides that generally define a plane of the strip and the strip includes a laser shock peened patch of the strip that has first and second laser shock peened surfaces on the first and second sides, respectively, first and second laser shocked regions having deep compressive residual stresses imparted by the laser shock peening extending into the strip from the first and second laser shock peened surfaces, respectively, and a deflection of a portion of the strip from a position of the portion before the laser shock peening. The deflection is formed by the laser shock peening such that at least a part and preferably substantially all of the deflection lies in the plane of the strip and the test coupon preferably includes an indicating means to indicate the deflection.
    Type: Grant
    Filed: June 26, 1998
    Date of Patent: September 14, 1999
    Assignee: General Electric Company
    Inventors: Seetharamaiah Mannava, William D. Cowie, P. Kennard Wright, III, Robert D. McClain
  • Patent number: 5520966
    Abstract: A process for increasing the corrosion resistance of honeycomb core panel construction by using an ion beam enhanced deposition. In one aspect of the invention, molybdenum ions are embedded a predetermined depth into the front and back surfaces of a honeycomb-shaped core. The ions interact with the core metal to form an aluminum-molybdenum alloy which is impervious to corrosion. A thin film coating of metal simultaneously is produced on the surface of the metal-ion embedded core metal. The process also may be used to embed ions into the outer skin layers to achieve enhanced corrosion resistance.
    Type: Grant
    Filed: July 26, 1994
    Date of Patent: May 28, 1996
    Assignee: Northrop Grumman Corporation
    Inventor: Michael G. Kornely, Jr.
  • Patent number: 5389195
    Abstract: The present invention is a surface modification process which provides a means of rapidly heating a thin layer of a polymer surface or a thin coating of material on a coated substrate and various surfaces produced by such a process.
    Type: Grant
    Filed: March 7, 1991
    Date of Patent: February 14, 1995
    Assignee: Minnesota Mining and Manufacturing Company
    Inventors: Andrew J. Ouderkirk, Douglas S. Dunn, Edward C. Yu, Susan N. Bohlke
  • Patent number: 5199999
    Abstract: A method for ion implantation of relatively high concentrations of alloying elements into a metal target without sputtering the target, in which the target is precoated with a layer of preselected thickness of a light, low sputtering yield element such as carbon, which is ablated during the ion implantation process.
    Type: Grant
    Filed: December 18, 1991
    Date of Patent: April 6, 1993
    Assignee: Queen's University
    Inventors: Lynann Clapham, James L. Whitton
  • Patent number: 5176760
    Abstract: A hard wear-resistant and corrosion- and oxidation-resistant stainless steel article is made by precision machining a work piece of approximately the size and shape of the desired article, then subjecting the resulting cold worked article to ion bombardment until the article is nitrided to a depth of about 0.002 inch, and finally subjecting the nitrided article to an atmosphere of argon and nitrogen and oxygen until the resulting ion bombardment has penetrated to a depth in the article surface of about 0.0001 inch.
    Type: Grant
    Filed: November 22, 1991
    Date of Patent: January 5, 1993
    Inventor: Albert Young
  • Patent number: 4968006
    Abstract: An improved method and an apparatus for the ion implantation of spherical surfaces are disclosed. The method includes the provision of a revised fixture by which a plurality of spherical workpieces are presented to a large area ion beam in a way that their entire respective spherical surfaces are uniformly ion implanted to improve their surface characteristics. The fixture includes a disc mounted for motion about two axes normal to each other, a plurality of holes formed in a the disc loosely to accommodate therein a plurality of spherical workpieces, each of the plurality of holes formed with a spherical bottom and having a cleaning orifice, cooling means disposed on one side of the disc, a thermocouple operatively mounted in association with the disc, and a cover plate mounted on a second side of the disc and provided with a plurality of apertures concentric with the plurality of holes formed in the disc.
    Type: Grant
    Filed: July 21, 1989
    Date of Patent: November 6, 1990
    Assignee: Spire Corporation
    Inventor: Richard W. Oliver
  • Patent number: 4952446
    Abstract: This invention relates to ultra-thin semiconductor films which can be in the submicron range formed from semiconductor materials such as silicon, germanium and gallium arsenide. The films are formed by creating a thin slightly damaged surface on the polished reverse side of a film (e.g., a wafer) of the semiconductor by low dose ion implantation and then etching the semiconductor material on the front side of the film to remove the semiconductor material down to the ion implanted damaged layer. While the implanted ions can be chosen from functionally desirable ions which upon annealing remain in the film to alter the original electrical characteristics, the implanted ions can also be chosen so that upon annealing, the resultant ultra-thin semiconductor film has the same electrical characteristics as the original semiconductor material.The ion implantation changes the etching characteristics of the ion implanted layer.
    Type: Grant
    Filed: December 14, 1988
    Date of Patent: August 28, 1990
    Assignee: Cornell Research Foundation, Inc.
    Inventors: Kevin C. Lee, Charles A. Lee, John Silcox
  • Patent number: 4946735
    Abstract: This invention relates to ultra-thin semiconductor films which can be in the submicron range formed from semiconductor materials such as silicon, germanium and gallium aresenide. The films are formed by creating a thin slightly damaged surface on the polished reverse side of a film (e.g., a wafer) of the semiconductor by low dose ion implantation and then etching the semiconductor material on the front side of the film to remove the semiconductor material down to the ion implanted damaged layer. While the implanted ions can be chosen from functionally desirable ions which upon annealing remain in the film to alter the original electrical characteristics, the implanted ions can also be chosen so that upon annealing, the resultant ultra-thin semiconductor film has the same electrical characteristics as the original semiconductor material.The ion implantation changes the etching characteristics of the ion implanted layer.
    Type: Grant
    Filed: December 14, 1988
    Date of Patent: August 7, 1990
    Assignee: Cornell Research Foundation, Inc.
    Inventors: Kevin C. Lee, Charles A. Lee, John Silcox
  • Patent number: 4915746
    Abstract: A method of forming internal high temperature barriers in structural metals is provided. The barriers prevent movement of boundaries and dislocations inside the structural metal, and make strutural metals creep resistant at high homologous temperatures. The method comprises providing a first layer of strutural metal, implanting ions into this layer, and layering a second layer of structural metal on the ion-implanted first layer to form a laminated product. The steps of implanting and layering can be repeated an arbitrary number of times.
    Type: Grant
    Filed: August 15, 1988
    Date of Patent: April 10, 1990
    Inventor: Gerhard E. Welsch
  • Patent number: 4894098
    Abstract: Ion implantation is conducted in a desired area(s) of the surface of a magnetic layer, and annealing of the layer is carried out to control the composition in that desired area(s). The control of the composition may be facilitated by applying a one-directional or rotating magnetic field during ion implantation. In preparing a magnetic head, a portion of a magnetic pole at least on one side thereof in close proximity to a magnetic recording medium is formed into an iron or iron-based magnetic alloy film, at least part of which is subjected to ion implantation and annealing.
    Type: Grant
    Filed: July 28, 1988
    Date of Patent: January 16, 1990
    Assignee: Hitachi, Ltd.
    Inventors: Shigekazu Otomo, Noriyuki Kumasaka, Ryo Imura, Ryo Suzuki, Yutaka Sugita
  • Patent number: 4891183
    Abstract: A method of improving the elevated temperature oxidation resistance of non-iron base alloys, especially nickel and cobalt base alloys by the addition of dopants to the oxide scale formed on a broad range of non-iron base alloys such as wrought or cast nickel or cobalt base heat resistant alloys.
    Type: Grant
    Filed: December 3, 1986
    Date of Patent: January 2, 1990
    Assignee: Chrysler Motors Corporation
    Inventor: John M. Corwin
  • Patent number: 4872922
    Abstract: A method and an apparatus for the ion implantation of spherical surfaces are disclosed. The method essentially includes the provision of a fixture by which a plurality of spherical workpieces are presented to a large area ion beam in a way that their entire respective spherical surfaces are uniformly ion implanted to improve their surface characteristics. The fixture basically includes a solid disc mounted for motion about two axes normal to each other, a plurality of cages formed in a first surface of the disc loosely to accommodate therein a plurality of spherical workpieces, cooling means disposed on a second surface of the disc, and a cover plate and/or mask mounted on the first surface of the disc and provided with a plurality of apertures concentric with the plurality of cages formed in the disc.
    Type: Grant
    Filed: March 11, 1988
    Date of Patent: October 10, 1989
    Assignee: Spire Corporation
    Inventors: Stephen N. Bunker, Piran Sioshansi
  • Patent number: 4863810
    Abstract: A method of providing corrosion resistant substrates having an amorphous metallic alloy coating thereon. The method comprises depositing refractory and transition elements, such as Ni, Nb, Ti and Cr, onto the substrate to provide a crystalline metallic layer thereon which is then irradiated to convert the layer into an amorphous metallic coating on the substrate. The coated substrate displays a corrosion resistance which is at least about four orders of magnitude greater than for the uncoated substrate in both lN HNO.sub.3 and 0.1 N NaCl aqueous solutions.
    Type: Grant
    Filed: September 21, 1987
    Date of Patent: September 5, 1989
    Assignee: Universal Energy Systems, Inc.
    Inventors: Rabi S. Bhattacharya, Amarendra K. Rai, Peter P. Pronko, Charbel Raffoul
  • Patent number: 4743308
    Abstract: A metal alloy with a treated surface and the process of effecting the treated surface are disclosed whereby its ion release under static, stress and crevice corrosion and corrosive wear conditions is reduced. The metal alloy preferably is an ASTM F-75 Co-Cr-Mo alloy. The preferred process includes providing a workpiece formed of such a metal alloy with a coating of biologically compatible elements, such as a noble metal and then exposing the thus coated surface thereof to bombardment by an ion beam, whereby a plurality of noble metal atoms, together with a plurality of ions from the beam, are driven into the surface of the workpiece a certain distance. Another preferred process includes the direct ion implantation of a workpiece with biocompatible elements, such as nitrogen, tantalum and inert gas ions. Preferably, such a workpiece finds application as an orthopaedic implant.
    Type: Grant
    Filed: January 20, 1987
    Date of Patent: May 10, 1988
    Assignee: Spire Corporation
    Inventors: Piran Sioshansi, Ward D. Halverson
  • Patent number: 4724016
    Abstract: The present invention is directed to a method for increasing the wear and corrosion resistance of zirconium and zirconium alloys by ion implantation. In particular the present invention is directed to the ion implantation of nitrogen and/or carbon for the purpose of increasing wear resistance; and the ion implantation of arsenic, carbon, chromium, nitrogen, tin, phosphorus or combinations thereof for the purpose of increasing the corrosion resistance.
    Type: Grant
    Filed: September 19, 1985
    Date of Patent: February 9, 1988
    Assignee: Combustion Engineering, Inc.
    Inventor: Andrew J. Anthony
  • Patent number: 4693760
    Abstract: A process for preventing surface discoloration in orthopedic implants made of titanium and its alloys is disclosed. Such surface discoloration is apt to occur when the orthopedic implants are ion implanted to improve their wear characteristics. The process essentially includes exposing all fixtures and shields, made of pure titanium, located in an implant chamber, to an ion beam, creating a vacuum within the chamber not exceeding about 5.times.10.sup.-5 torr, introducing an orthopedic implant within the chamber to be directly exposed to the beam, and reducing the ion beam current power density so as not to exceed about 1.0 watt/cm.sup.2. Exposing the fixtures and shields to the ion beam first serves to remove surface contamination therefrom, followed by forming a surface layer thereon. This surface layer effectively lowers the sputtering coefficient of the fixtures and shields, and thus reduces the amount of material sputtered from areas exposed to the ion beam to unexposed areas.
    Type: Grant
    Filed: May 12, 1986
    Date of Patent: September 15, 1987
    Assignee: Spire Corporation
    Inventor: Piran Sioshansi