Abstract: Disclosed are a light-emitting semiconductor device substrate and a method of manufacturing the same. The substrate is prepared by causing a Ga.sub.1-x Al.sub.x As compound semiconductor single crystalline thick-film layer having a first AlAs mole fraction and a low Al containing and oxidation-delaying Ga.sub.1-y Al.sub.y As compound semiconductor single crystalline thin film serving as a surface protective layer and having a second AlAs mole fraction to be sequentially grown on a GaAs crystal substrate. The method comprises the step of causing the thick-film layer and the thin film to be sequentially grown on the GaAs crystal substrate. The GaAs crystal substrate is removed after sequential epitaxial growth of the thick-film layer and thin film on the GaAs crystal substrate.

Abstract: A method for producing a silicon dioxide film by contacting a substrate such as glass with a treating liquid comprising a hydrosilicofluoric acid solution supersaturated with silicon dioxide to deposit a silicon dioxide film on the surface of the substrate, the method being characterized by providing a device for preventing an Si component from escaping from the treating liquid. According to the method, pollution of working environment and decrease in concentration of solution do not occur during the formation of silicon dioxide film.

Abstract: A thin layer of liquid phase epitaxial melt material (26) is formed on a wafer (15,16). The thin melt layer (26) is held in contact with the wafer (15,16) while the temperature of the thin melt layer (26) and the wafer (15,16) are reduced to crystallize a portion of the melt material thereby producing thin and accurately controlled epitaxial layers on the wafer (15,16).

Abstract: An electro-optical device with a transparent substrate is produced by epitaxially first growing the device layers, followed by that of the transparent substrate layer on an opaque wafer. The opaque wafer is subsequently removed. The device layers have dopants with sufficient low diffusivities that their electronic characteristics are not adversely affected by long exposure to elevated temperature during the growth of the transparent substrate layer. In a liquid phase epitaxy (LPE) method, a repeated temperature cycle technique is used where the temperature is repeatedly raised up each time after cooling to provide a large cooling range for growing a sufficiently thick substrate layer or a series of device layers. In between growths and during the temperature heat-up periods, the device is stored within the LPE reactor. In other embodiments, the device is either temporarily removed from the LPE reactor or is transferred to another reactor.

Abstract: A hetero-epitaxial liquid phase growth method for growing a compound semiconductor by liquid phase epitaxy includes placing a melt in a closed melt boat on a substrate and epitaxially growing a first thin film, opening the melt boat while the melt remains in a melted state for a predetermined time to evaporate a component of the melt, and epitaxially growing a second thin film on the first thin film from the melt from which the component has been evaporated.

Abstract: In the manufacture of laser diodes having a stripe-shaped, active layer, a problem arises upon application of lateral layers, particularly of blocking pn-junctions for lateral current conduction, in that these layers are undesired above the active layer. By applying a protective cover layer that will dissolve in super-cooled melts of the material of the lateral layers, before the growth of the lateral layers, the growth of the lateral layers, particularly blocking pn-junctions, above the active stripe is avoided since the cover layer dissolves in the melt given epitaxial application of the lateral layers.

Abstract: Hg.sub.1-x Cd.sub.x Te, Hg.sub.1-x Zn.sub.x Te and other related II-VI ternary semiconductor compounds are important strategic materials for photovoltaic infrared detector applications. Liquid phase epitaxy employing a tellurium-rich molten nonstoichiometric solution is an accepted technology for thin film epitaxial crystal growth.This present invention describes a crystal growth process employing specially encapsulated graphite components which directly facilitate a high volume, high quality large area epitaxial layer production.

Abstract: A device and method for liquid-phase thin film epitaxial growth are disclosed wherein yield and quality of semiconductors in the fabrication sequences are improved. The device comprises an electric furnace which is disposed outside a quartz tube, a plurality of boats which are disposed within the quartz tube in accordance with a sort of melting liquids and a plurality of auxiliary heating devices are disposed around the boats with a power source independent from the electric furnace.

Abstract: An epitaxial layer having a double-hetero structure is forming using an MOCVD process or an MBE process, and an epitaxial substrate is formed using an LPE process, thereby forming a substrate which exploits the distinguishing features of both processes. Since the MOCVD process or MBE process exhibits mixed-crystal ratio and film thickness controllability, excellent reproducibility and uniformity are obtained when forming the double-hetero structure on a compound semiconductor substrate. Since the growth process takes place under thermal non-equilibrium, the amount of impurity doping is raised to more than 10.sup.19 cm.sup.3. This is advantageous in terms of forming an electrode contact layer. With the LPE process, the material dissolved in the melt is grown epitaxially on the substrate by slow cooling, and the rate of growth is high. This process is suitable for forming the substrate after removal of the compound semiconductor substrate.

Abstract: A process for making single-crystal mercury cadmium telluride layers by epitaxial growth on a cadmium telluride substrate, performed inside a reactor with two communication zones, kept at different and controlled temperatures. The growth solution is directly prepared inside the reactor by subjecting weighed cadmium and tellurium quantities and a mercury bath to a specific thermal cycle so that the mercury concentration in the solution is established by absorption from the vapor phase and is controlled by the lower temperature level.

Abstract: An interrupted liquid phase epitaxy process for producing distributed feedback laser wafers involves epitaxial growth at a first temperature range followed by epitaxial growth at a second higher temperature range. A prior art liquid phase epitaxy process involves a low temperature soak at a temperature of approximately 615 degrees Centrigrade followed by ramped cooling and epitaxial growth of a guiding layer, active layer and confining layer at a temperature of approximately 595 degrees Centigrade. The interrupted liquid phase epitaxy process involves epitaxial growth of a guiding layer in a manner similar to the prior art process, but growth of the guiding layer is followed by a high temperature soak at a temperature of approximately 645 degrees Centrigrade. Ramped cooling follows, with epitaxial growth of the active layer and confining layer taking place at a temperature of approximately 628 degrees Centigrade.

Abstract: In a method for Liquid Phase Epitaxy (LPE) of semi-insulating InP, a solution of P, Ti and a p-type dopant in molten In is cooled in a non-oxidizing ambient at a surface of a substrate to grow an epitaxial layer of doped InP on the surface. The concentration of p-type dopant in the solution is such as to provide a concentration of p-type dopant in the grown epitaxial layer greater than the aggregate concentration of any residual contaminants in the grown epitaxial layer, and the concentration of Ti in the solution is such as to provide a concentration of Ti in the grown epitaxial layer greater than the concentration of p-type dopant in the grown epitaxial layer. The required melt concentrations are determined empirically. The method can be performed at temperature below 650 degrees Celsius and is particularly suited to the LPE growth of semi-insulating InP to isolate InP-InGaAsP buried heterostructure lasers.