Annealing, Incoherent Light Patents (Class 148/DIG4)
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Patent number: 5773329Abstract: A method of low temperature and rapid silicon crystallization or rapid transformation of amorphous silicon to high quality polysilicon over a large area is disclosed using a pulsed rapid thermal annealing (PRTA) method and a metal seed layer. The PRTA method forms polysilicon thin film transistors (TFTs) with a high throughput, on low temperature and large area glass substrates. The PRTA method includes the steps of forming over a glass layer a tri-layer structure having a layer of amorphous silicon sandwiched between bottom and top dielectric layers; selectively etching the top dielectric layer to expose portions of the amorphous silicon layer; forming a metal seed layer over the exposed portions of the amorphous silicon layer; and pulsed rapid thermal annealing using successive pulses separated by rest periods to transform the amorphous silicon layer to a polysilicon layer. In an alternate PRTA method, instead of forming the tri-layer structure, a bi-layer structure is formded over the glass layer.Type: GrantFiled: July 24, 1996Date of Patent: June 30, 1998Assignee: International Business Machines CorporationInventor: Yue Kuo
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Patent number: 5750443Abstract: Disclosed is a method of manufacturing a semiconductor device wherein a corpuscular beam is radiated to a semiconductor substrate to create crystal defects therein. The semiconductor substrate is subjected to a heat treatment, e.g. for 1 second to 60 minutes, wherein rapid heating-up, e.g. raising temperature to 550.degree. to 850.degree. C. within 10 minutes, is done in a process prior to that of carrying out of the radiation with a corpuscular beam. By doing so, there is provided a semiconductor device which is free from degradation in electrical characteristics such as current amplification factor and has an increased switching speed, even where crystal defects are created through the radiation of corpuscular beam such as an electron beam to shorten the carrier lifetime. Thus, the inventive semiconductor device is satisfied by both requirements of switching speed and electrical characteristic.Type: GrantFiled: March 3, 1997Date of Patent: May 12, 1998Assignee: Rohm Co., Ltd.Inventor: Kazuhisa Sakamoto
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Patent number: 5529937Abstract: After a pattern is transferred on silicon film crystallized by annealing, the silicon film is annealed by radiation of intense rays for a short time. Especially, in the crystallizing process by annealing, an element which promotes crystallization such as nickel is doped therein. The area not crystallized by annealing is also crystallized by radiation of intense rays and a condensed silicon film is formed. After a metal element which promotes crystallization is doped, annealing by light for a short time is performed by radiating intense rays onto the silicon film crystallized by annealing in an atmosphere containing halide. After the surface of the silicon film is oxidized by heating or by radiating intense rays in a halogenated atmosphere and an oxide film is formed on the silicon film, the oxide film is then etched. As a result, nickel in the silicon film is removed.Type: GrantFiled: July 20, 1994Date of Patent: June 25, 1996Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hongyong Zhang, Hideto Ohnuma, Yasuhiko Takemura
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Patent number: 5387546Abstract: The present invention relates to a method for manufacturing a semiconductor device including a method for reforming an insulating film formed by a low temperature CVD method. It is an object of the present Invention to provide a method for manufacturing a semiconductor device capable of improving a film quality of an insulating film formed by a CVD method which is able to form a film at a low temperature and also capable of maintaining mass productivity, in which processing by irradiation with ultraviolet rays of the insulating film while heating the film after forming an insulating film (4) on a body to be formed by a chemical vapor deposition method is included.Type: GrantFiled: June 22, 1992Date of Patent: February 7, 1995Assignees: Canon Sales Co., Inc., Alcan-Tech Co., Ltd., Semiconductor Process Laboratory Co., Ltd.Inventors: Kazuo Maeda, Noboru Tokumasu, Yuko Nishimoto
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Patent number: 5312771Abstract: An optical annealing method for a semiconductor layer provided on a substrate comprises irradiating a base member provided with a semiconductor layer and an absorbing layer for incoherent light across an insulating layer, with incoherent light followed by patterning the absorbing layer to form a gate electrode.Type: GrantFiled: April 6, 1993Date of Patent: May 17, 1994Assignee: Canon Kabushiki KaishaInventor: Takao Yonehara
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Patent number: 5306662Abstract: A method for manufacturing a III-V Group compound or a II-VI Group compound semiconductor element by VPE, comprising the step of annealing a grown compound at 400.degree. C. or higher, or irradiating electron beam the grown compound at 600.degree. C. or higher.Type: GrantFiled: November 2, 1992Date of Patent: April 26, 1994Assignee: Nichia Chemical Industries, Ltd.Inventors: Shuji Nakamura, Naruhito Iwasa, Masayuki Senoh
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Patent number: 5296405Abstract: An improved semiconductor processing is disclosed. In the manufacturing process, a semiconductor layer is formed and then undergoes photo annealing. A neutralizer is then introduced to the photoannealed semiconductor. The semiconductor thus formed demonstrates the SEL effect instead of the Staebler-Wronski effect.Type: GrantFiled: August 24, 1992Date of Patent: March 22, 1994Assignee: Semiconductor Energy Laboratory Co.., Ltd.Inventors: Shunpei Yamazaki, Kunio Suzuki, Susumu Nagayama, Takashi Inujima, Masayoshi Abe, Takeshi Fukada, Mikio Kinka, Ippei Kobayashi, Katsuhiko Shibata, Masato Susukida, Kaoru Koyanagi
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Patent number: 5212101Abstract: The invention provides a method of producing silicon with about 100% substitutionality of very high concentrations of carbon up to about 10.sup.21 cm.sup.-3, which has good quality recrystallized layers containing low levels of residual damage, and which avoids precipitation of mobile carbon. This method, compatible with current state-of-the-art VLSI silicon technology, comprises the sequential steps of: implanting a silicon wafer with carbon ions, and two step annealing of the implanted silicon wafer.Type: GrantFiled: November 6, 1991Date of Patent: May 18, 1993Assignee: Secretary of State for Defence in her Britannic Majesty's Government of the United KingdomInventors: Leigh T. Canham, Keith G. Barraclough, Mark R. Dyball
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Patent number: 5171710Abstract: An improved semiconductor processing is disclosed. In the manufacturing process, a semiconductor layer is formed and then undergoes photo annealing. A neutralizer is then introduced to the photoannealed semiconductor. The semiconductor thus formed demonstrates the SEL effect instead of the Staebler-Wronski effect.Type: GrantFiled: May 9, 1990Date of Patent: December 15, 1992Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Kunio Suzuki, Susumu Nagayama, Takashi Inujima, Masayoshi Abe, Takeshi Fukada, Mikio Kinka, Ippei Kobayashi, Katsuhiko Shibata, Masato Susukida, Kaoru Koyanagi
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Patent number: 5169796Abstract: A method of fabricating a metal-gate field effect transistor having source and drain regions which are self-aligned with the gate. The source and drain dopants are introduced into the substrate and driven. Then, a metal gate is formed, the metal gate having a length which is approximately the same as the length of the channel. After the gate is fabricated, dopant ions are implanted into any portions of the channel not covered by the gate. These dopant ions are activated by rapid thermal annealing at a temperature selected to avoid damage to the metal gate, to form bridge regions which extend one or both of the source/drain regions into the channel and which are self-aligned with the gate.Type: GrantFiled: September 19, 1991Date of Patent: December 8, 1992Assignee: Teledyne Industries, Inc.Inventors: Roger Murray, Nevand Godhwani
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Patent number: 5024955Abstract: A variable-capacitance diode element is disclosed which comprises a semiconductor substrate of a first conductivity type having an epitaxial layer of the first conductivity type provided on a main surface portion thereof, said epitaxial layer having a higher resistivity than that of said semiconductor substrate; a first diffusion layer of the first conductivity type diffused in said epitaxial layer and having a lower resistivity than that of said epitaxial layer; a second diffusion layer of a second conductivity type surrounded by said first diffusion layer and having a lower resistivity than that of said first diffusion layer; and a third diffusion layer of the second conductivity type of a small diffusion length covering an exposed portion of a major surface of said first diffusion layer and an exposed portion of a major surface of said second diffusion layer. With such construction, the capacitance variation range of the diode element is widened, and the high-frequency serial resistance R.sub.Type: GrantFiled: June 13, 1990Date of Patent: June 18, 1991Assignee: Toko, Inc.Inventor: Takeshi Kasahara
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Patent number: 5024962Abstract: A method of fabricating metal gate field effect transistors utilizing a rapid thermal oxidation process to form a sealing oxide which prevents auto-doping during the formation of the gate oxide.Type: GrantFiled: April 20, 1990Date of Patent: June 18, 1991Assignee: Teledyne Industries, Inc.Inventors: Roger W. Murray, Nevand Godhwani
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Patent number: 4981815Abstract: A method for rapidly thermal processing a semiconductor wafer (1) by irradiation with electromagnetic radiation which provides that the majority portion of the energy required for heating the semiconductor wafer (1) is transmitted with at least single-sided irradiation of the semiconductor wafter (1) with electromagnetic radiation from a main irradiation arrangement (62) and the intensities (I.sub.M, I.sub.R) of the radiation directed onto the central region (6) and of the radiation directed onto the edge regions (5) are identical. The temperatures in the central region (6) and in the edge regions (5) of the semiconductor wafer (1) are maintained identical during the entire tempering process in order to increase the yield, and an additional electromagnetic radiation is directed onto the edge region (5) of the semiconductor wafer for compensating for the radiation of heat occurring faster at the edge region (5) of the semiconductor wafer (1).Type: GrantFiled: March 13, 1989Date of Patent: January 1, 1991Assignee: Siemens AktiengesellschaftInventor: Ronald Kakoschke
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Patent number: 4971919Abstract: The present invention relates to a semiconductor photoelectric conversion device which has a laminate member composed of a plurality of PIN structures formed one on the other. The manufacturing method includes a laminate member forming step and an electrode forming step. In the laminate member forming step, the first and second PIN structures and the transparent conductive layers are formed. In the electorde forming step a metal layer is annealed to form a metal silicide layer and the remaining metal layer is removed.Type: GrantFiled: March 9, 1989Date of Patent: November 20, 1990Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Shunpei Yamazaki
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Patent number: 4963503Abstract: A liquid crystal display device comprises, a plurality of display electrodes which are selectively energized through on-off control of thin film transistors. In order to reduce the channel length of the thin film transistors to increase operation speed and obtain uniform characteristics each display electrode and an associated transistor source electrode is formed on one of a pair of transparent substrates of the liquid crystal display device, a semiconductor layer is formed between the display electrode and source electrode, a gate insulating film is formed on the semiconductor layer, and a gate electrode is formed on a portion of the gate insulating film between the display electrode and source electrode. Then, ions are implanted into the semiconductor layer with the gate electrode used as a mask, thus rendering portions of the semiconductor layer contiguous to the display electrode and source electrode into ohmic layers.Type: GrantFiled: March 29, 1989Date of Patent: October 16, 1990Assignee: Hosiden Electronics Co., Ltd.Inventors: Shigeo Aoki, Yasuhiro Ugai, Katsumi Miyake, Kotaro Okamoto
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Patent number: 4950614Abstract: A method of making a tandem type semiconductor photoelectric conversion device, comprising steps of: forming laminate member on a substrate by laminating first and second PIN structure of non-single crystal semiconductor in that order (or in the reverse order); forming an electrode on the laminate member; and crystallization an I-type layer of the second PIN structure by light irradiation (a) through the electrode (in this case, the electrode is transparent), or (b) from the side opposite from the substrate before formation of the electrode (or (a) from the side opposite from the substrate before formation of the first PIN structure, or (b) through the substrate (in this case, the substrate is transparent)).Type: GrantFiled: January 30, 1989Date of Patent: August 21, 1990Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Shunpei Yamazaki
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Patent number: 4888305Abstract: An improved semiconductor processing is disclosed. In the manufacturing process, just formed semiconductor layer undergoes photo annealing and latent dangling bonds are let appear on the surface and gaps, then neutralizer is introduced to the ambience of the semiconductor. The semiconductor thus formed demonstrates SEL effect in place of Staebler-Wronski effect.Type: GrantFiled: March 9, 1989Date of Patent: December 19, 1989Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Kunio Suzuki, Susumu Nagayama, Takashi Inujima, Masayoshi Abe, Takeshi Fukada, Mikio Kinka, Ippei Kobayashi, Katsuhiko Shibata, Masato Susukida, Kaoru Koyanagi
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Patent number: 4888302Abstract: A defect free monocrystalline layer of silicon on an insulator is produced by forming a thin layer of silicon dioxide on a monocrystalline silicon substrate, forming a thin layer of polycrystalline or amorphous silicon on the silicon dioxide layer and focussing two beams from lamps on the thin silicon layer to form a line image providing a melt zone surrounded by two narrow heated zones having temperatures lower than the melt zone and having a temperature differential of from 2.degree.-10.degree. C./mm decreasing form the melt zone while heating the substrate to a temperature below that of the zones heated by the lamps and scanning the structure.Type: GrantFiled: March 29, 1989Date of Patent: December 19, 1989Assignee: North American Philips CorporationInventor: Subramanian Ramesh
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Patent number: 4879259Abstract: A method of annealing a wafer in a rapid thermal annealer is disclosed. The walls of the chamber are heated more rapidly than is the wafer. In a preferred embodiment, the interior of the graphite walls of the annealer is lined with a molybdenum sheet which is open toward the lamps that heat the chamber. Thus, the walls heat very rapidly to a temperature greater than the condensation point of arsenic, preventing arsenic condensation on the walls. Effective annealing can be achieved at wall temperatures in the range of 500.degree. to 600.degree. C. Prior to the heat ramp up, an arsenic atmosphere, preferably trimethylarsenic (TMAs) at an appropriate overpressure is introduced. This overpressure is maintained both during the heating and cooling cycle. By the use of this method, the exposure time for annealing can be reduced from prior times of as much as 20 minutes to as little as 10 seconds.Type: GrantFiled: February 1, 1989Date of Patent: November 7, 1989Assignee: The Board of Trustees of the Leland Stanford Junion UniversityInventors: Scott K. Reynolds, Dietrich W. Vook, James F. Gibbons
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Patent number: 4851358Abstract: The concentration of internal gettering sites within a semiconductor wafer is controlled by two-step thermal processing. In a concentration reduction phase, the wafer is rapidly heated to an elevated temperature in the range from about 900.degree. to 1350.degree. C., resulting in the partial or total dissolution of precipitable impurities within the wafer. In a concentration enhancement step, the wafers are subjected to a relatively low temperature anneal process where the density of potential internal gettering sites is increased. By properly controlling the processing temperatures and treatment times, the two steps may be performed in either order to obtain wafers having internal gettering site concentrations within a desired range.Type: GrantFiled: February 11, 1988Date of Patent: July 25, 1989Assignee: DNS Electronic Materials, Inc.Inventor: Walter Huber
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Patent number: 4845055Abstract: For preventing a semiconductor substrate from a heat attack, a method of rapid annealing using a lamp unit for a heat radiation comprises the step of preparing a semiconductor substrate having a multiple-layer structure and a vessel having an annealing chamber where the lamp unit is placed, the vessel is associated with an inert gas supplying system operative to supply a high-pressure inert gas to the annealing chamber, and the above step is followed by the steps of placing the semiconductor substrate in the annealing chamber, supplying the high-pressure inert gas to the annealing chamber so as to create a high-pressure inert ambient within a predetermined range and activating the lamp unit for the heat radiation so as to heat up the semiconductor substrate, so that the heat radiation is decreased in intensity by virtue of the high-pressure inert ambient.Type: GrantFiled: May 7, 1988Date of Patent: July 4, 1989Assignee: Yamaha CorporationInventor: Takashi Ogata
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Patent number: 4784975Abstract: The insulating and stabiity characteristics of silicon dioxide gate oxide insulator for field effect transistors are enhanced by subjecting the silicon dioxide to an annealing in an ambient that contains a gaseous oxygen-containing species in an amount sufficient to provide a partial pressure from the oxygen-containing material of about 10.sup.-6 torr to about 10 torr during annealing temperatures of about 500.degree. C. to about 1200.degree. C. Such is carried out for a time sufficient to enhance the insulating and stability characteristics of the silicon dioxide insulator.Type: GrantFiled: October 23, 1986Date of Patent: November 15, 1988Assignee: International Business Machines CorporationInventors: Karl Hofmann, Gary W. Rubloff, Donald R. Young
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Patent number: 4752592Abstract: An annealing method for a GaAs wafer which uses incoherent light, e.g., infrared light generated from tungsten lamp, halogen lamp, etc. and a GaAs guard ring which surrounds the GaAs wafer. The thickness of the guard ring is 1.5 times more than that of the GaAs wafer, the internal diameter of the guard ring is less than diameter of GaAs wafer plus 3 mm and the width of the guard ring is less than 10 mm.Type: GrantFiled: November 28, 1986Date of Patent: June 21, 1988Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Akiyoshi Tamura, Takeshi Onuma
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Patent number: 4751193Abstract: Method is provided for manufacturing large crystalline and monocrystalline semiconductor-on-insulator devices.Type: GrantFiled: October 9, 1986Date of Patent: June 14, 1988Assignee: Q-Dot, Inc.Inventor: James J. Myrick
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Patent number: 4743569Abstract: A two step rapid thermal anneal (RTA) has been studied for activating Be implanted GaAs, where a short duration high temperature step is used to electrically activate the Be followed by a longer low temperature anneal for lattice re-growth. PN diodes show a substantial reduction in reverse diode leakage current after the lower temperature second step anneal, when compared to a single step RTA or to furnace annealing (FA). For low energy Be implants, no difference in electrical activation between the single step and the two step anneal is observed. Raman studies demonstrate that residual substrate impurities and high Be concentrations inhibit restoration of single crystal lattice characteristics after RTA. Lattice quality is also shown not to limit diode characteristics in the RTA material.Type: GrantFiled: April 20, 1987Date of Patent: May 10, 1988Assignee: Texas Instruments IncorporatedInventors: Donald L. Plumton, Liem T. Tran, Walter M. Duncan
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Patent number: 4729962Abstract: The process of the invention includes applying precursors 6 with N- and P-type dopants therein to a silicon web 2, with the web 2 then being baked in an oven 10 to drive off excessive solvents, and the web 2 is then heated using a pulsed high intensity light in a mechanism 12 at 1100.degree.-1150.degree. C. for about 10 seconds to simultaneously form semiconductor junctions in both faces of the web.Type: GrantFiled: March 24, 1986Date of Patent: March 8, 1988Assignee: The United States of America as represented by the United States Department of EnergyInventor: Robert B. Campbell
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Patent number: 4585492Abstract: Silicon dioxide insulating films for integrated circuits are provided with enhanced electronic properties, including enhanced dielectric breakdown of MOS insulating layers and reduced trapping of holes by exposing a metal oxide semiconductor wafer including an exposed silicon dioxide layer, in an ambient of flowing oxygen gas, to heating radiation from a halogen lamp for a duration on the order of 100 seconds to achieve annealing temperature on the order of 1000.degree. C.For reduced hole trapping, the ambient gas is oxygen and the annealing temperature is on the order of 1000.degree. C. for a duration on the order of 100 seconds, depending on the oxide thickness.Nitrogen, occurring at the silicon-silicon dioxide interface as a result of previous processing including a long anneal in nitrogen, increases the improvement of the silicon dioxide by the subsequent rapid thermal annealing in oxygen.Type: GrantFiled: July 30, 1984Date of Patent: April 29, 1986Assignee: International Business Machines CorporationInventors: Zeev A. Weinberg, Donald R. Young
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Patent number: 4576652Abstract: Ion implanted gallium arsenide substrates are annealed by providing an arsenic-containing gaseous ambient on all sides of the substrate, and heating the gallium arsenide substrate with broad area incoherent light.Type: GrantFiled: July 12, 1984Date of Patent: March 18, 1986Assignee: International Business Machines CorporationInventors: Harold J. Hovel, Thomas F. Kuech
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Patent number: 4566913Abstract: Silicon dioxide insulating films for integrated circuits are provided with enhanced electronic properties, including decreased water content and reduced trapping of electrons, by exposing a metal oxide semiconductor wafer including an exposed silicon dioxide layer, in an ambient of flowing inert gas, to heating radiation from a halogen lamp for a duration on the order of ten seconds to achieve annealing temperature in the range 600C.-800C.Type: GrantFiled: July 30, 1984Date of Patent: January 28, 1986Assignee: International Business Machines CorporationInventors: Marc H. Brodsky, Zeev A. Weinberg
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Patent number: 4561907Abstract: A method for forming highly doped, low sheet resistance, anisotropically etched polysilicon using heat pulse annealing and plasma etching. The combination of low sheet resistance and anisotropic etch behavior is provided by heat pulse annealing for a time which corresponds to a characteristic transition region of the sheet resistance-annealing time curve.Type: GrantFiled: July 12, 1984Date of Patent: December 31, 1985Inventor: Bruha Raicu