Abstract: Provided is a mask including a mask frame including a base part in which cell openings are defined, and a coating part surrounding edges of the cell openings, covering at least a portion of an upper surface of the base part, and including a materials that is different from that of the base part, and unit masks on the mask frame, respectively corresponding to the cell openings, including a material that is different from that of the coating part, and in which openings are defined.

Abstract: An annular member is disposed to surround a pedestal for receiving a substrate in a plasma processing apparatus. The annular member contains quartz and silicon. A content percentage of the silicon in the quartz and the silicon is 2.5% or more and 10% and less by weight.

Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated circuit. The method includes forming a first hard mask layer over a substrate and forming a second hard mask layer over the first hard mask layer. The second hard mask layer is patterned to define an island having a first width along a first direction. The island is patterned to form a patterned island having a second width along the first direction that is less than the first width. A sacrificial mask is formed over the first hard mask layer and the first hard mask layer is patterned according to the patterned island and the sacrificial mask.

Abstract: Hygienic Hydrophilic coatings, hydrophilic coating formulations and wetting fluids that include an anti-infective agent.

Abstract: A carrier proximity mask and methods of assembling and using the carrier proximity mask may include providing a first carrier body, second carrier body, and set of one or more clamps. The first carrier body may have one or more openings formed as proximity masks to form structures on a first side of a substrate. The first and second carrier bodies may have one or more contact areas to align with one or more contact areas on a first and second sides of the substrate. The set of one or more clamps may clamp the substrate between the first carrier body and the second carrier body at contact areas to suspend work areas of the substrate between the first and second carrier bodies. The openings to define edges to convolve beams to form structures on the substrate.

Abstract: Provided is a material composition and method for substrate modification. A substrate is patterned to include a plurality of features. The plurality of features includes a first subset of features having one or more substantially inert surfaces. In various embodiments, a priming material is deposited over the substrate, over the plurality of features, and over the one or more substantially inert surfaces. By way of example, the deposited priming material bonds at least to the one or more substantially inert surfaces. Additionally, the deposited priming material provides a modified substrate surface. After depositing the priming material, a layer is spin-coated over the modified substrate surface, where the spin-coated layer is substantially planar.

Abstract: A method includes projecting energy onto an annular edge of a glass substrate. The annular edge includes a first roughness. The first roughness is reduced to a second roughness with the energy. The energy reduces the first roughness without changing a roundness of the annular edge of the glass substrate.

Abstract: Disclosed is a substrate processing apparatus. The substrate processing apparatus includes a container body, and a holding member that conveys the substrate from an outside of the container body into the container body and holds the substrate inside the container body during the processing. A substrate support pin supporting a wafer and a cooling plate cooling the holding member are provided outside the container body.

Abstract: In some embodiments, the disclosure relates to an integrated circuit structure. The integrated circuit structure has a substrate and a first hard mask layer over the substrate. An island of a second hard mask layer is arranged on the first hard mask layer and is set back from sidewalls of the first hard mask layer. A sacrificial mask is disposed over the island of the second hard mask layer. The sacrificial mask has sidewalls that define an opening exposing upper surfaces of the first hard mask layer and the island of the second hard mask layer. The island of the second hard mask layer extends from below the sacrificial mask to laterally past the sidewalls of the sacrificial mask.

Abstract: The invention relates to new conjugated semiconducting polymers containing thermally cleavable side groups. The thermally cleavable side groups are selected from among carbonate groups and carbamate groups. By thermally cleaving side groups, the solubility or the polymers can be reduced in a targeted manner. The polymers are used as semiconductors in organic electronic (OE) devices, especially in organic photovoltaic (OPV) devices, organic photodetectors (OPDs), organic light emitting diodes (OLEDs), and organic field effect transistors (OFETs).

Abstract: A segmented edge protection shield for plasma dicing a wafer. The segmented edge protection shield includes an outer structure and a plurality of plasma shield edge segments. The outer structure defines an interior annular edge configured to correspond to the circumferential edge of the wafer. Each one of the plurality of plasma shield edge segments is defined by an inner edge and side edges. The inner edge is interior to and concentric to the annular edge of the outer structure. The side edges extend between the inner edge and the annular edge.

Abstract: A patterning method is disclosed. A substrate having a hard mask layer and a first material layer formed thereon is provided. The first material layer is patterned into first array patterns and first peripheral patterns. The first array patterns are further transferred into first spacer patterns. Subsequently, a planarization layer and a second material layer are successively formed on the substrate. The second material layer is patterned into second array patterns and second peripheral patterns. The second array patterns are further transferred into second spacer patterns. The second spacer patterns partially overlap the first spacer patterns. The second peripheral patterns do not overlap the first peripheral pattern. The first spacer patterns not overlapped by the second spacer patterns are removed to obtain third array patterns. The hard mask layer is then etched using the third array patterns, the second peripheral patterns and the first peripheral patterns as an etching mask.

Abstract: Provided is a material composition and method for substrate modification. A substrate is patterned to include a plurality of features. The plurality of features includes a first subset of features having one or more substantially inert surfaces. In various embodiments, a priming material is deposited over the substrate, over the plurality of features, and over the one or more substantially inert surfaces. By way of example, the deposited priming material bonds at least to the one or more substantially inert surfaces. Additionally, the deposited priming material provides a modified substrate surface. After depositing the priming material, a layer is spin-coated over the modified substrate surface, where the spin-coated layer is substantially planar.

Abstract: A microelectromechanical systems (MEMS) package includes a eutectic bonding structure free of a native oxide layer and an anti-stiction layer, while also including a MEMS device having a top surface and sidewalls lined with the anti-stiction layer. The MEMS device is arranged within a MEMS substrate having a first eutectic bonding substructure arranged thereon. A cap substrate having a second eutectic bonding substructure arranged thereon is eutectically bonded to the MEMS substrate with a eutectic bond at the interface of the first and second eutectic bonding substructures. The anti-stiction layer lines a top surface and sidewalls of the MEMS device, but not the first and second eutectic bonding substructures. A method for manufacturing the MEMS package and a process system for selective plasma treatment are also provided.

Abstract: A dry etching apparatus for performing dry etching in manufacture of a set of touch screen panels on a mother substrate, including a chamber, an upper electrode in the chamber at an upper portion thereof, the upper electrode configured to apply a high-frequency power source (RF) to the interior of the chamber, a lower electrode in the chamber at a lower portion thereof, the lower electrode configured to apply the high-frequency power source to the interior of the chamber, a gas injection port configured to inject a compound mixture gas into the chamber, an exhaust port configured to exhaust a reactive gas produced in the interior of the chamber, and a shadow mask disposed above a location on the lower electrode for the mother substrate for the touch screen panels, the shadow mask having a plurality of exposure windows respectively corresponding to a plurality of exposure portions to be formed.

Abstract: A plasma process chamber includes a top electrode, a bottom electrode disposed opposite the top electrode, the bottom electrode capable of supporting a substrate. The plasma process chamber also includes a plasma containment structure defining a plasma containment region, the plasma containment region being less than an entire surface of the substrate. The plasma containment structure rotates relative to the substrate and wherein the plasma containment region includes a center point of the substrate throughout the rotation of the plasma containment structure relative to the substrate. The plasma containment structure includes multiple gaps. A vacuum source is coupled to the gaps in the plasma containment structure. A method of processing a substrate is also described.

Abstract: A thin film forming apparatus and a thin film forming method using the same are disclosed. In one aspect, the thin film forming apparatus comprises a mask that includes a blocking portion and an opening. It also includes an etching source that jets an etching gas through the opening of the mask to etch a thin film according to a pattern. The mask includes a gas blower for blowing a gas around the opening so that the etching gas does not penetrate into a thin film area corresponding to the block portion. When the thin film forming apparatus is used, a normal residual area of a thin film may be safely preserved and patterning may be accurately performed. Thus, the quality of a product manufactured by using the thin film forming apparatus may be improved.

Abstract: A plasma processing apparatus includes a process chamber including a sidewall, a mounting table disposed in the process chamber, a shield member which is disposed along the inner surface of the sidewall to surround the mounting table and has an opening facing the transfer port, and a shutter configured to open/close the opening, the shutter being movable up and down. The shutter has a first portion adapted to face the opening, and a second portion adapted to face the shield member at a lower side of the shield member. The shield member has a lower portion including a contact surface facing the second portion. A contactor adapted to contact the contact surface is disposed at the second portion. The first portion of the shutter closes the opening through a gap between the first portion and the shield member. The contact surface and the contactor are formed of HASTELLOY®.

Abstract: Laser and plasma etch wafer dicing using UV-curable adhesive films. A mask is formed covering ICs formed on the wafer, as well as any bumps providing an interface to the ICs. The semiconductor wafer is coupled to a carrier substrate by a double-sided UV-curable adhesive film. The mask is patterned by laser scribing to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer, below thin film layers from which the ICs are formed. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the ICs. The UV-curable adhesive film is partially cured by UV irradiation through the carrier. The singulated ICs are then detached from the partially cured adhesive film still attached to the carrier substrate, for example individually by a pick and place machine. The UV-curable adhesive film may then be further cured for the film's complete removal from the carrier substrate.

Abstract: A plasma shielding member may include a body having a first surface and a second surface that are opposite to each other, and a plurality of through holes each extending from the first surface to the second surface; a narrower portion of a respective through hole formed at one end of each of the through holes; and/or a wider portion of the respective through hole formed at another end of each of the through holes. A plasma shielding member may include a body including a plurality of through holes that extends from a first surface of the body toward a second surface of the body. Each of the through holes may be defined by a narrower portion of the body at a first end of the respective through hole, and by a wider portion of the body at a second end of the respective through hole.

Abstract: The disclosed embodiments relate to methods and apparatus for removing material from a substrate. In various implementations, conductive material is removed from a sidewall of a previously etched feature such as a trench, hole or pillar on a semiconductor substrate. In practicing the techniques herein, a substrate is provided in a reaction chamber that is divided into an upper plasma generation chamber and a lower processing chamber by a corrugated ion extractor plate with apertures therethrough. The extractor plate is corrugated such that the plasma sheath follows the shape of the extractor plate, such that ions enter the lower processing chamber at an angle relative to the substrate. As such, during processing, ions are able to penetrate into previously etched features and strike the substrate on the sidewalls of such features. Through this mechanism, the material on the sidewalls of the features may be removed.

Abstract: A mask holding device has a replaceable magnetic means, and a deposition apparatus for an organic light emitting device includes the mask holding device. The mask holding device is provided with magnets, and the magnets can be replaced as required so as to change the magnetic force of the mask holding device.

Abstract: A hard mask is provided which, while having a film density to demonstrate etching resistance, is low in film stress. The hard mask HD of this invention, which is provided to restrict the range of processing to the surface of a to-be-processed object W at the time of performing a predetermined processing to the to-be-processed object, is constituted by a titanium nitride film. This titanium nitride film is made into a two-layer structure. A lower-side layer L1 has a film thickness h1 within a range of 5 to 50% of the total film thickness ht of the hard mask, and also has a film density within a range of 3.5 to 4.7 g/cm3. An upper-side layer has a film density within a range of 4.8 to 5.3 g/cm3.

Abstract: A bevel etcher for cleaning a bevel edge of a semiconductor substrate with plasma includes a lower electrode assembly having a lower support having a cylindrical top portion. An upper dielectric component is disposed above the lower electrode assembly having a cylindrical bottom portion opposing the top portion of the lower support. A tunable upper plasma exclusion zone (PEZ) ring surrounds the bottom portion of the dielectric component, wherein a lower surface of the tunable upper PEZ ring includes an upwardly tapered outer portion extending outwardly from the bottom portion of the upper dielectric component, wherein a vertical height of an adjustable gap between the lower surface of the upper PEZ ring and an upper surface of a substrate supported on the lower support can be increased or decreased such that the extent of the bevel edge of the substrate to be cleaned by the plasma can respectively be adjusted radially inward or radially outward.

Abstract: There is provided a method for producing a substrate (600) suitable for supporting an elongated superconducting element, wherein, e.g., a deformation process is utilized in order to form disruptive strips in a layered solid element, and where etching is used to form undercut volumes (330, 332) between an upper layer (316) and a lower layer (303) of the layered solid element. Such relatively simple steps enable providing a substrate which may be turned into a superconducting structure, such as a superconducting tape, having reduced AC losses, since the undercut volumes (330, 332) may be useful for separating layers of material. In a further embodiment, there is placed a superconducting layer on top of the upper layer (316) and/or lower layer (303), so as to provide a superconducting structure with reduced AC losses.

Abstract: Pressure maskers for masking at least one passageway of an article include a body portion that surrounds at least a portion of the article around the at least one passageway, at least one fluid inlet connected to the body portion that provides a conduit for pressurized masking fluid to pass from an exterior of the pressure masker to an interior of the pressure masker, wherein the article is at least partially disposed within the interior of the pressure masker, and at least one seal that seals the body portion at least partially around the article such that the pressurized masking fluid that enters the interior of the pressure masker is at least partially forced through the at least one passageway.

Abstract: Embodiments described herein relate to an apparatus and method for lining a processing region within a chamber. In one embodiment, a modular liner assembly for a substrate processing chamber is provided. The modular liner assembly includes a first liner and a second liner, each of the first liner and second liner comprising an annular body sized to be received in a processing volume of a chamber, and at least a third liner comprising a body that extends through the first liner and the second liner, the third liner having a first end disposed in the process volume and a second end disposed outside of the chamber.

Abstract: A deposition mask for manufacturing an organic light emitting display (OLED) using the same are provided. The deposition mask is intended for preventing an organic film from being damaged due to touching of a blocked-off portion of the mask to an emission layer (EML), or chemical transition from being generated at the organic film. For that purpose, the deposition mask stuck to a substrate of the OLED to deposit an organic EML includes an opening and an indentation. The opening is opened so as to deposit the organic EML. The indentation is indented a predetermined depth from a plane facing the substrate.

Abstract: A method of forming a silicon containing confinement ring for a plasma processing apparatus useful for processing a semiconductor substrate comprises inserting silicon containing vanes into grooves formed in a grooved surface of an annular carbon template wherein the grooved surface of the annular carbon template includes an upwardly projecting step at an inner perimeter thereof wherein each groove extends from the inner perimeter to an outer perimeter of the grooved surface. The step of the grooved surface and a projection at an end of each silicon containing vane is surrounded with an annular carbon member wherein the annular carbon member covers an upper surface of each silicon containing vane in each respective groove. Silicon containing material is deposited on the annular carbon template, the annular carbon member, and exposed portions of each silicon containing vane thereby forming a silicon containing shell of a predetermined thickness.

Abstract: A plasma processing apparatus of exciting a processing gas into plasma by applying a high frequency power between an upper electrode and a lower electrode provided within a processing chamber and performing a plasma process on a target object to be processed with the plasma includes a DC power supply configured to apply a DC voltage to the upper electrode; a ground electrode connected to the DC power supply; and an annular shield member provided outside the ground electrode. A groove is formed into a downward recess at an outer peripheral portion of the ground electrode, and an upper end of the shield member is positioned above an upper end of the peripheral portion of the ground electrode. A protruding portion, which is protruded toward a center of the ground electrode, is formed at a portion of the shield member positioned above the ground electrode.

Abstract: Disclosed is an apparatus and method for forming lubricant recesses having minute configurations by applying a photolithograph method in a curved inner surface, such as a cylinder bore surface of a cylinder block, the inside of a cylinder liner, the inside of a compressor cylinder, a big end of a connecting rod, a big end bearing, a shaft insertion hole of a rocker arm, or the like in an internal combustion engine.

Abstract: The present invention relates to a substrate treating apparatus, and more particularly, to an apparatus treating a substrate using plasma. In an embodiment, a baffle is formed with holes distributing a process gas excited to a plasma state, and has a surface which is treated with a surface treating material comprising a silicon compound.

Abstract: Embodiments of a method for thinning a wafer are provided. The method includes placing a wafer on a support assembly and securing an etching mask to a backside of the wafer. The etching mask covers a peripheral portion of the wafer. The method further includes performing a wet etching process on the backside of the wafer to form a thinned wafer, and the thinned wafer includes peripheral portions having a first thickness and a central portion having a second thickness smaller than the first thickness. Embodiments of system for forming the thinned wafer are also provided.

Abstract: The embodiments disclose a structure, including a first layer selectively etched on a substrate with a seedlayer deposited thereon, a first layer bit patterned growth guiding mechanism on the seedlayer, and a plurality of bit patterned magnetic recording features grown on the seedlayer guided by the growth guiding mechanism.

Abstract: A substrate support may include a body; an inner ring disposed about the body; an outer ring disposed about the inner ring forming a first opening therebetween; a first seal ring disposed above the first opening; a shadow ring disposed above the inner ring, extending inward from the outer ring and forming a second opening between the shadow and outer rings; a second seal ring disposed above the second opening; a space at least partially defined by the body and the inner, outer, first, second, and shadow rings; a first gap defined between a processing surface of a substrate when present and the shadow ring; and a plurality of second gaps fluidly coupled to the space; wherein the first gap and the plurality of second gaps are configured such that, when a substrate is present, a gas provided to the space flows out of the space through the first gap.

Abstract: A thin film deposition apparatus that may be easily manufactured, that may be easily applied to manufacture large-sized display devices on a mass scale, and that improves manufacturing yield and deposition efficiency, and a method of manufacturing an organic light-emitting display device by using the thin film deposition apparatus are disclosed. The thin film deposition apparatus for forming a thin film on a substrate, the thin film deposition apparatus including: a magnet disposed on a first surface of the substrate; a patterning wheel disposed on a second surface opposite to the first surface of the substrate, rotatable around a rotation axis, and including a plurality of grooves along a peripheral surface; and a patterning wire including a plurality of blockers having shapes corresponding to the plurality of grooves of the patterning wheel, and windable to the patterning wheel.

Abstract: According to one embodiment, a pattern forming method includes, forming a first mask on a film to be processed, forming a guide that has a pattern including first openings and second openings, forming a second mask which covers the first openings and does not cover the second openings, etching the first mask using the second mask and the guide as a mask, removing the second mask, applying a self-assembling material into the first openings and the second openings, heating the self-assembling material to form a self-assembled pattern including a first polymer portion and a second polymer portion, etching the first polymer portion, etching the first mask using the second polymer portion and the guide as a mask, and processing the film to be processed using the first mask as a mask.

Abstract: A mask is disclosed. The mask includes at least one support base having at least one opening formed therein, where at least a portion of the boundary of the opening is tapered. The mask also includes at least one positioning layer disposed on the at least one support base, where at least one through opening corresponding to and aligned with the at least one opening is formed in the at least one positioning layer. In addition, at least a portion of the boundary of the through opening is tapered.

Abstract: Provided are an apparatus and method for etching an organic layer, in which an organic material deposited in a non-layer forming area of a substrate is etched. The apparatus includes an etching chamber; a plasma generator configured to supply plasma into the etching chamber; a stage disposed in the etching chamber and configured to support the substrate; and a mask configured to guide the plasma toward the non-pixel area.

Abstract: A substrate processing apparatus that simultaneously forms thin films on a plurality of substrates and performs heat treatment includes: a plurality of substrate holders, each including a substrate support that supports a substrate and a first gas pipe having one or a plurality of injection holes; a boat where the plurality of substrate holders are stacked and including a second gas pipe connected with the first gas pipe of each of the substrate holders; a process chamber providing a space in which the substrates stacked in the boat are processed; a conveying unit that carries the boat into/out of the process chamber; a first heating unit disposed outside the process chamber; and a gas supply unit including a third gas pipe connected with the second gas pipe and supplying a heated or cooled gas into the second gas pipe.

Abstract: An apparatus for controlling a plasma etching process includes plasma control structure that can vary a size of a plasma flow passage, vary a speed of plasma flowing through the plasma flow passage, vary plasma concentration flowing through the plasma flow passage, or a combination thereof.

Abstract: Provided are a substrate holder, a substrate supporting apparatus, a substrate processing apparatus, and a substrate processing method. Particularly, there are provided a substrate holder, a substrate supporting apparatus, a substrate processing apparatus, and a substrate processing method that are adapted to improve process efficiency and etch uniformity at the back surface of a substrate.

Abstract: A thin film deposition apparatus capable of forming a precise deposition pattern on a large substrate includes a deposition source; a first nozzle disposed at a side of the deposition source having a plurality of first slits; a second nozzle disposed opposite to the first nozzle having a plurality of second slits; and a second nozzle frame bound to the second nozzle so as to support the second nozzle. The second nozzle frame includes two first frame portions spaced apart from each other and disposed in a direction in which the plurality of second slits are arranged, and two second frame portions each connecting the two first frame portions to each other, wherein the second frame portions are curved in the direction in which the plurality of second slits are arranged, so as to form arches.

Abstract: A method for fabricating a semiconductor device includes forming an etching target layer over a substrate including a first region and a second region; forming a hard mask layer over the etching target layer; forming a first etch mask over the hard mask layer, wherein the first etch mask includes a plurality of line patterns and a sacrificial spacer layer formed over the line patterns; forming a second etch mask over the first etch mask, wherein the second etch mask includes a mesh type pattern and a blocking pattern covering the second region; removing the sacrificial spacer layer; forming hard mask layer patterns having a plurality of holes by etching the hard mask layer using the second etch mask and the first etch mask; and forming a plurality of hole patterns in the first region by etching the etching target layer using the hard mask layer patterns.

Abstract: A mask frame assembly for thin film deposition is disclosed. In one embodiment, the assembly includes: a frame, and a plurality of unit mask strips attached to the frame, wherein each of the unit mask strips includes a plurality of unit masking patterns which are spaced apart from each other. In one embodiment, each of the unit masking patterns includes: i) a plurality of stripe pattern slits and ii) a plurality of sets of dot pattern slits each set formed to be substantially parallel with the stripe pattern slits. Further, the stripe pattern slits and the sets of dot pattern slits are alternately formed with respect to each other, wherein each set of the dot pattern slits includes a plurality of dot pattern slits, and wherein the length of each stripe pattern slit is substantially the same as the length of each set of the dot pattern slits.

Abstract: Methods for fabricating sub-lithographic, nanoscale microchannels utilizing an aqueous emulsion of an amphiphilic agent and a water-soluble, hydrogel-forming polymer, and films and devices formed from these methods are provided.

Abstract: A technique for implementing an clock tree distribution network having a clock buffer and a plurality of LC tanks that each take into \consideration local capacitance distributions and conductor resistances. An AC-based sizing formulation is applied to the buffer and to the LC tanks so as to reduce the total buffer area. The technique is iterative and can be fully automated while also reducing clock distribution power consumption.

Abstract: A wafer edge protector is used in an inductively coupled plasma reactive ion etching instrument for the manufacturing of GaN semiconductor devices and circuits. The wafer edge protector comprises a ring clamp, which has a first inner diameter and a second inner diameter, and the ring clamp covers the edges of a wafer and a wafer carrier to clamp the wafer and the wafer carrier and to prevent damage on the edges of the wafer and the wafer carrier during the etching process.

Abstract: Variable geometry process kits for use in semiconductor process chambers have been provided herein. In some embodiments, a process kit for use in a semiconductor process chamber includes: an annular body configured to rest about a periphery of a substrate support; a first ring positioned coaxially with the annular body and supported by the annular body; a second ring positioned coaxially with the first ring and supported by the first ring; and an annular shield comprising a horizontal leg positioned coaxially with the second ring such that a portion of the horizontal leg is aligned with and below portions of the first ring and second ring.

Abstract: Embodiments of the present disclosure generally provide apparatus and methods for improving process result near the edge region of a substrate being processed. One embodiment of the present disclosure provides a cover ring for improving process uniformity. The cover ring includes a ring shaped body, and an extended lip extending radially inwards from the ring shaped body. An inner edge of the extended lip forms a central opening to expose a processing region on a substrate being processed, and a width of the extended lip is between about 15% to about 20% of a radius of the central opening.