Abstract: There is provided a surface-treated steel sheet (1) comprising: a tin-plated steel sheet (10) obtained by tin-plating a steel sheet (11); a phosphate compound layer (20) containing tin phosphate formed on the tin-plated steel sheet (10); and an aluminum-oxygen compound layer (30) on the phosphate compound layer (20), a main constituent of the aluminum-oxygen compound layer (30) being an aluminum-oxygen compound; wherein, when the 3d5/2 spectrum of tin in the aluminum-oxygen compound layer (30) is determined using an X-ray photoelectron spectroscopy, the ratio of the integration value of the profile derived from tin oxide to the integration value of the profile derived from tin phosphate (tin oxide/tin phosphate) is 6.9 or more.

Abstract: Provided is an apparatus for electro-forming. The apparatus for electro-forming includes a plating bath which is a space where a substrate is plated and a clamp disposed within the plating bath and configured to grasp the substrate disposed in a horizontal direction. The apparatus for electro-forming further includes an assembly including an anode spaced above the substrate and connected to an external power supply and a plating solution supply unit spaced above the substrate and configured to supply a plating solution. The apparatus for electro-forming also includes a driving unit configured to reciprocate the assembly in a horizontal direction at a distance from the substrate. The assembly further includes an insulator between the anode and the plating solution supply unit.

Abstract: This disclosure enables high-productivity controlled fabrication of uniform porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

Abstract: A method for subjecting garment accessories to a surface electrolytic treatment provides various metallic colors to metallic garment accessories in a cost effective manner. The method can provide a first metallic color on one side of outer surface of the garment accessory and provide a second metallic color on the other side of the outer surface, by placing one or more metallic garment accessories in an electrolytic solution in a non-contact state with an anode and a cathode for passing electric current through the electrolytic solution, passing electric current through the electrolytic solution and generating a bipolar phenomenon on the garment accessory.

Abstract: An electroplating apparatus and method for depositing a metallic layer on the surface of a wafer is provided wherein said apparatus and method do not require physical attachment of an electrode to the wafer. The surface of the wafer to be plated is positioned to face the anode and a plating fluid is provided between the wafer and the electrodes to create localized metallic plating. The wafer may be positioned to physically separate and lie between the anode and cathode so that one side of the wafer facing the anode contains a catholyte solution and the other side of the wafer facing the cathode contains an anolyte solution. Alternatively, the anode and cathode may exist on the same side of the wafer in the same plating fluid. In one example, the anode and cathode are separated by a semi permeable membrane.

Abstract: This disclosure enables high-productivity controlled fabrication of uniform porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

Abstract: An electroplating apparatus and method for depositing a metallic layer on the surface of a wafer is provided wherein said apparatus and method do not require physical attachment of an electrode to the wafer. The surface of the wafer to be plated is positioned to face the anode and a plating fluid is provided between the wafer and the electrodes to create localized metallic plating. The wafer may be positioned to physically separate and lie between the anode and cathode so that one side of the wafer facing the anode contains a catholyte solution and the other side of the wafer facing the cathode contains an anolyte solution. Alternatively, the anode and cathode may exist on the same side of the wafer in the same plating fluid. In one example, the anode and cathode are separated by a semi permeable membrane.

Abstract: Electroplating systems that include a plurality of electrodes, a power supply operably coupled to the plurality of electrodes, a platen for bearing a substrate on which metal features are to be formed, and an electrode support are disclosed. The electrode support may be configured for suspending the electrode assembly over an upper surface of the substrate disposed on the platen in spaced relation to and in alignment with the substrate or for supporting the electrode assembly in a stationary position over the substrate when the voltage is applied across the plurality of electrodes. The electrodes may be adjacent, mutually spaced and electrically isolated and connected in series so as to be oppositely polarized when the voltage is applied thereacross or may be connected so as to have alternating polarities when the voltage is applied thereacross.

Abstract: A medical device on which a water-swellable polymeric material is strongly bonded to the surface of the substrate such as an electrically conductive material. A medical device that includes an electrically conductive material and a water-swellable polymeric material having reactive functional groups and being previously crosslinked, the reactive functional groups of the water-swellable polymeric material being chemically bonded with ions existing on the surface of the electrically conductive material.

Abstract: An apparatus and method is disclosed for simultaneously electroplating at least two parts in a series electrical configuration in an electroplating system using a shared electrolyte with excellent consistency in thickness profiles, coating weights and coating microstructure. Parts in high volume and at low capital and operating cost are produced as coatings or in free-standing form.

Abstract: A metal surface treatment composition including at least one compound selected from the group consisting of a zirconium compound and a titanium compound, and an organosiloxane, which is a polycondensate of organosilane and has in a molecule thereof of at least two amino groups, in which the Degree of polycondensation of the organosiloxane is at least 40%, the content of at least one compound selected from the group consisting of the zirconium compound and the titanium compound is predetermined content, the content of the organosiloxane in the metal surface treatment composition is predetermined content, and the mass ratio of at least one element selected from the group consisting of the zirconium element and the titanium element contained in the zirconium compound and the titanium compound, respectively, to the silicon element contained in the organosiloxane is a predetermined ratio.

Abstract: Disclosed is a solution for an electrochemical process, the solution containing a sulfonic acid and having a low concentration of sulfur compounds, either low or high valence, that are susceptible to reduction and which is intended for use in electrodeposition, batteries, conductive polymers and descaling processes.

Abstract: A method of electroplating conductive material on semiconductor wafers controls undesirable surface defects by reducing the electroplating current as the wafer is being initially immersed in a plating bath. Further defect reduction and improved bottom up plating of vias is achieved by applying a static charge on the wafer before it is immersed in the bath, in order to enhance bath accelerators used to control the plating rate. The static charge is applied to the wafer using a supplemental electrode disposed outside the plating bath.

Abstract: Aspects of the present disclosure are directed to electrochemical approaches for synthesis of platinum-iridium alloys with selected platinum-iridium ratio content and subsequently predetermined mechanical properties and electrochemical impedance properties. Such can provide a simple and cost-effective process for preparing these electrodes, as compared to conventional thin film processing techniques. A three-electrode electrochemical electrodeposition system is described including an electrochemical cell with a working electrode on which the electrodeposited film is deposited, a counter electrode to complete the electrochemical circuit and a reference electrode to measure and control surface potential. Mixed layers of platinum atoms and iridium atoms can be deposited from electrolyte solution onto the working electrode surface to create an electrically conductive surface with material properties related to the composition of the as-deposited film.

Abstract: A semiconductor wafer holder includes first and second holding members between which a semiconductor wafer is held. The second holding member includes a second conductive element placed in contact with a first conductive element of the first holding member and the semiconductor wafer. A ring clamp is used to press the second holding member against the first holding member for holding of the semiconductor wafer.

Abstract: A multi-layered wafer support apparatus is provided for performing an electroplating process on a semiconductor wafer (“wafer”). The multi-layered wafer support apparatus includes a bottom film layer and a top film layer. The bottom film layer includes a wafer placement area and a sacrificial anode surrounding the wafer placement area. The top film layer is defined to be placed over the bottom film layer. The top film layer includes an open region to be positioned over a surface of the wafer to be processed, i.e., electroplated. The top film layer provides a liquid seal between the top film layer and the wafer, about a periphery of the open region. The top film layer further includes first and second electrical circuits that are each defined to electrically contact a peripheral top surface of the wafer at diametrically opposed locations about the wafer.

Abstract: A method for the biomimetic treatment of an osteointegrative interface on a substrate of biocompatible metal of titanium, tantalum, or their alloys, includes performing a first ASD anodic deposition treatment of the osteointegrative interface in a calcium glycerophosphate solution, performing a second ASD anodic deposition treatment of the osteointegrative interface in a calcium hydroxide solution and performing an immersion of the osteointegrative interface in a potassium or sodium hydroxide solution.

Abstract: Herein disclosed are an electrode and a method for making an electrode having an enhanced electrically effective surface providing an increased signal to noise ratio. The electrode having a metal surface selected from gold, tungsten, stainless steel, platinum, platinum-tungsten, platinum-iridium, and combinations thereof; and an electrically conductive coating on said metal surface, said coating consisting essentially of polymerized pyrrole.

Abstract: Activation of a tungsten-containing catalyst using water in a PEM-type fuel cell is described as well as cathode operation of the tungsten-containing catalyst.

Abstract: The invention relates to a drum which has a wall, wherein at least the inside of the wall is provided with a surface of insulating material, an opening, defined by wall segments of the wall, radially spaced from one another with respect to a central rotational axis of the drum, and a drive mechanism for rotating the drum in a first or in a second direction, wherein at least one first electrode is arranged on the inside of the wall, and wherein at least one counter electrode is arranged on or between a central axis of the drum and the wall, and a method for coating workpieces.

Abstract: A method of selectively depositing metal features on a conductive surface of a substrate. An electrode assembly that includes a plurality of electrodes connected in series so as to be oppositely polarized when a voltage is applied thereacross is positioned over the conductive surface of the substrate. The plurality of electrodes is in close proximity to, but does not contact, the conductive surface of the substrate. Positively charged portions and negatively charged portions of the conductive surface of the substrate are created and metal ions are deposited on the negatively charged portions.

Abstract: Disclosed herein are electrolyte solutions and methods for electrolytic co-deposition of calcium phosphate and drug composites. The electrolyte solution may be formed by mixing solutions comprising calcium and phosphate precursors together to form an electrolyte solution. The electrolyte solution can have a water content less than 30 weight percent. The electrolyte solution may comprise a water-soluble non-aqueous solvent. A therapeutic agent, such as water-insoluble drug, is also present in the solution. The electrolyte solution thus formed may be used to co-deposit a calcium phosphate coating and the therapeutic agent on a substrate.

Abstract: A method for manufacturing a plated film by bringing a film having a conductive surface into electrical contact with a cathode roll with a liquid film interposed between the film and the cathode and forming a metal plating on the conductive surface of the film, characterized in that the relation E0>[(I/Cs)×d]/? where E0 is the reduction potential of the metal forming the plating, I is the value of the current flowing through the cathode roll for plating, Cs is the area of the conductive surface of the film in electrical contact with the cathode roll with a liquid film interposed therebetween, d is the thickness of the gap between the cathode roll and the conductive film, and ? is the conductivity of the liquid forming the liquid film present in the gap. A cathode roll having a surface roughness Rmax of 1 ?m or less is also disclosed. Further a cathode roll having a Vickers hardness of the surface of 200 or more is disclosed.

Abstract: [Object] To provide a nanocarbon/aluminum composite material having high strength and electrical conductivity for suitable use in a lead wire, a heat exchanger and an automotive part and a process for producing the nanocarbon/aluminum composite material. [Solution] There is provided a plating liquid for nanocarbon/aluminum composite production, comprising an aluminum halide, nanocarbon and 1,3-dialkylimidazolium halide and/or the like, wherein the molar ratio of the aluminum halide to the 1,3-dialkylimidazolium halide and/or the like is in the range of 20:80 to 80:20 and the 1,3-dialkylimidazolium halide and/or the like has an alkyl group with a carbon number of 1 to 12. There are also provided a nanocarbon/aluminum composite production process comprising forming a plating film on a substrate surface by electrolysis of the plating liquid in a dry, oxygen-free atmosphere with the passage of a direct current etc. under the electrolysis conditions of a bath temperature of 0 to 300° C. and a current density of 0.

Abstract: Methods and apparatuses for electrochemically depositing a metal layer onto a substrate. An electrochemical deposition apparatus comprises a substrate holder assembly including a substrate chuck and a relatively soft cathode contact ring. The cathode contact ring comprises an inner portion and an outer portion, wherein the inner portion directly contacts the substrate. An anode is disposed in an electrolyte container. A power supply connects the substrate holder assembly and the anode.

Abstract: The present invention provides a process for electropolishing a conductive surface of a semiconductor wafer. During the process, a contact electrode in a contact solution contacts a contact region on surface of the conductive layer with the contact solution. Further, during the process a process electrode in a process solution contacts a process region on the conductive surface with the process solution while applying an electrical potential between the contact electrode and the process electrode to electropolish the surface of the conductive layer of the process region.

Abstract: An electrolytic processing apparatus can detect the end point of electrolytic processing stably with high precision and with a relatively simple construction. The electrolytic processing apparatus includes: a processing electrode which can come close to or into contact with a processing object; a feeding electrode for feeding electricity to the processing object; a fluid supply section for supplying fluid between the processing object and at least one of the processing electrode and the feeding electrode; a processing power source for applying a voltage between the processing electrode and the feeding electrode; a drive section for causing relative movement between the processing object and at least one of the processing electrode and the feeding electrode; and an eddy current sensor for detecting the thickness of the processing object from a change in eddy current loss. The sensor is disposed not in contact with (or separately) by an insulator from the processing electrode and/or the feeding electrode.

Abstract: To be able to form a copper-zinc-tin alloy which optionally comprises at least one chalcogenide and thus forms a semiconductor without the use of toxic substances a metal plating composition for the deposition of a copper-zinc-tin alloy is disclosed, wherein said metal plating composition comprises at least one copper plating species, at lease one zinc plating species, at least one tin plating species and at least one complexing agent and further, if the alloy contains at least one chalcogen, at least one chalcogen plating species.

Abstract: There is provided a method for preparation of a transition metal electroplated porous carbon nanofiber composite for hydrogen storage. Specifically, the preparation method of a transition metal electroplated porous carbon nanofiber composite for hydrogen storage according to the present invention comprises electroplating a transition metal with a controlled particle diameter and a surface dispersion ratio on a porous carbon nanofiber with specific surface area from 500 to 3000 m2/g, pore volume from 0.1 to 2.0 cc/g and diameter from 10 to 500 nm. With increased hydrogen storage capacity, the transition metal electroplated porous carbon nanofiber composite provided by the present invention can be utilized as hydrogen storage medium of active material for electrodes of electrochemical devices, such as fuel cell, secondary cell and supercapcitor.

Abstract: Apparatus and method for electrolytic coating of a mould, the internal surfaces of which demarcate a mould cavity, with a coating material for the purpose of achieving or re-achieving intended mould cavity dimensions. The mould, as the cathode, and an anode positioned in the mould cavity and an electrolyte containing the coating material are used. The electrolyte serving as the carrier of the coating material flows through the mould cavity in a controlled manner. During the electrolytic coating, only the internal surfaces of the mould cavity come into contact with the electrolyte and the external surfaces of the s mould therefore do not have to be covered. The mechanical properties can be kept largely uniform over the entire region. The coating can be achieved more rapidly than with the conventional processes.

Abstract: An electroplating apparatus and method for depositing a metallic layer on the surface of a wafer is provided wherein said apparatus and method do not require physical attachment of an electrode to the wafer. The surface of the wafer to be plated is positioned to face the anode and a plating fluid is provided between the wafer and the electrodes to create localized metallic plating. The wafer may be positioned to physically separate and lie between the anode and cathode so that one side of the wafer facing the anode contains a catholyte solution and the other side of the wafer facing the cathode contains an anolyte solution. Alternatively, the anode and cathode may exist on the same side of the wafer in the same plating fluid. In one example, the anode and cathode are separated by a semi permeable membrane.

Abstract: A plating processing method comprises performing a continuous electrolytic plating of the surface of a film having a surface resistivity in the range of 1 ?f/Sq to 1000 ?/Sq, wherein a distance between the lowest contacting part of a negative electrode with the film and a plating liquid is in the range of 0.5 cm to 15 cm.

Abstract: A process employing a rack having an article carrier that is movably supported on a frame and mechanically coupled for translating movement from a motor to the article carrier to effect movement of an article during processing to provide more uniform surface treatment, reducing or eliminating the need for shielding.

Abstract: An anodizing solution, and method of anodizing, comprising suspending at least one aluminium substrate in an anodizing solution and applying an anodizing current to the anodizing solution. The anodizing solution comprises 0.01-5%, by weight, sodium silicate and 0.01-5%, by weight, ?-amino acid.

Abstract: A contact rhodium structure is fabricated by a process that comprises obtaining a substrate having a dielectric layer thereon, wherein the dielectric layer has cavities therein into which the contact rhodium is to be deposited; depositing a seed layer in the cavities and on the dielectric layer; and depositing the rhodium by electroplating from a bath comprising a rhodium salt; an acid and a stress reducer; and then optionally annealing the structure.

Abstract: A component capable of being exposed to a plasma in a process chamber has a structure having an electroplated coating comprising yttrium-containing species. The electroplated coating can include zirconium oxide, or can have an oxide layer thereon. In another embodiment the electroplated coating comprises a first species and is coated with a second electroplated coating comprising a second species that is different from the first species. The electroplated coating is resistant to corrosion in the plasma. In another embodiment, the electroplated coating has an interface having a thickness with a first concentration gradient of an yttrium-containing species and a second concentration gradient of a second species. An electroplated coating having a layer comprising first and second concentration gradients of first and second metals can be formed by varying the concentration of the first and second metal electrolyte species in the electroplating bath to electroplate the coating.

Abstract: A method is provided for detecting target molecules (60) using a surface-molecularly imprinted sensor (52) and more particularly for detecting hydroxyl containing molecules, heavy metal ions, or thiol- or dialkylamine containing molecules by integrating molecular recognition and sensor transduction. The method includes soaking a support surface (14) in a solution containing a ligand molecule with headgroups that could adsorb on the surface of a substrate, or monomer to create a monolayer, a monolayer of polymerized organosiloxane groups (16), or a conducting film on the support surface (14). Template molecules (18) are then added to the imprinting solution so as to be positioned within the sparsely formed film, wherein the template molecules (18) comprise hydroxyl containing molecules, heavy metal ions, or thiol and dialkylamine containing molecules which prevents the interaction between monomer/ligand molecules and template molecules (18).

Abstract: The present invention relates to a method for the metallization of an electrically non-conductive substrate using a thiosulfate conductor which employs a thiosulfate-containing conductor solution further comprising an alkali metal ion selected from the group consisting of lithium, potassium, rubidium, caesium, and combinations thereof.

Abstract: A method of depositing a coating of a nanostructure material onto a substrate includes: (1) forming a solution of suspension of coating the nanostructure material; (2) selectively adding “chargers” to the solution; (3) immersing electrodes in the solution, the substrate upon which the nanostructure material is to be deposited acting as one of the electrodes; (4) applying a direct and/or alternating current electrical field between the two electrodes for a certain period of time thereby causing the nanostructure materials in the solution to migrate toward and attach themselves to the substrate electrode; and (5) subsequent optional processing of the coated substrate.

Abstract: Anticorrosive coating is formed cheaply and in a short period, which facilitates its general application to marine steel structures. A steel caisson 1 is used as a cathode, an undersea member 3 arranged in seawater and opposed to the steel caisson 1 is used as anode. Direct current is passed between the electrodes so that anticorrosive coating 8 is formed on the steel caisson 1 through electrolytic reaction of the seawater, thereby attaining anticorrosion. The electric current is passed between the electrodes such that coating 7 with magnesium hydrate as dominant constituent is formed on the steel caisson 1 to have a predetermined thickness; then, supply of the electric current is stopped. Thus, anticorrosive coating 8 is formed through compositional substitution effect of substituting calcium carbonate for the magnesium hydrate in the presence of seawater.

Abstract: Substantially uniform deposition of conductive material on a surface of a substrate, which substrate includes a semiconductor wafer, from an electrolyte containing the conductive material can be provided by way of a particular device which includes first and second conductive elements. The first conductive element can have multiple electrical contacts, of identical or different configurations, or may be in the form of a conductive pad, and can contact or otherwise electrically interconnect with the substrate surface over substantially all of the substrate surface. Upon application of a potential between the first and second conductive elements while the electrolyte makes physical contact with the substrate surface and the second conductive element, the conductive material is deposited on the substrate surface. It is possible to reverse the polarity of the voltage applied between the anode and the cathode so that electro-etching of deposited conductive material can be performed.

Abstract: The present invention is directed to a method and apparatus for plating a surface of a semiconductor workpiece (wafer, flat panel, magnetic films, etc.) using a liquid conductor that makes contact with the outer surface of the workpiece. The liquid conductor is stored in a reservoir and pump through an inlet channel to the liquid chamber. The liquid conductor is injected into a liquid chamber such that the liquid conductor makes contact with the outer surface of the workpiece. An inflatable tube is also provided to prevent the liquid conductor from reaching the back face of the workpiece. A plating solution can be applied to the front face of the workpiece where a retaining ring/seal further prevents the plating solution and the liquid conductor from making contact with each other. In an alternative embodiment, electrical contacts may be formed using an inflatable tube that has either been coated with a conductive material or contains a conductive object.

Abstract: An electroplating apparatus for depositing a metallic layer on a surface of a wafer is provided. In one example, a proximity head capable of being electrically charged as an anode is placed in close proximity to the surface of the wafer. A plating fluid is provided between the wafer and the proximity head to create localized metallic plating.

Abstract: The present invention is directed to a method and apparatus for plating a surface of a semiconductor workpiece (wafer, flat panel, magnetic films, etc.) using a liquid conductor that makes contact with the outer surface of the workpiece. The liquid conductor is stored in a reservoir and pump through an inlet channel to the liquid chamber. The liquid conductor is injected into a liquid chamber such that the liquid conductor makes contact with the outer surface of the workpiece. An inflatable tube is also provided to prevent the liquid conductor from reaching the back face of the workpiece. A plating solution can be applied to the front face of the workpiece where a retaining ring/seal further prevents the plating solution and the liquid conductor from making contact with each other. In an alternative embodiment, electrical contacts may be formed using an inflatable tube that has either been coated with a conductive material or contains a conductive object.

Abstract: A plating method and apparatus using contactless electrode is described. In one embodiment an inductive element is placed proximally to a substrate and a moving electromagnetic field generates an emf in the substrate to plate the surface. In another embodiment, a conductive plate is used, so that the conductive plate and the wafer, separated by a dielectric material, operate as two plates of a capacitor when voltage is applied to the conductive plate. The resulting electrostatic field impresses a charge potential on the substrate to plate the surface of the substrate.

Abstract: An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinum. Examples of semi-noble metals include cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a “patch” of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material, such as copper, may be deposited over the catalytic layer.

Abstract: Openings are formed at the bottom of an anodizing container. A shower-type current path forming mechanism is arranged at the lower portion of the anodizing container. The mechanism has a pressure vessel. A shower head is arranged at the upper portion of the pressure vessel. A conductive solution in a shower form is injected or discharged from the shower head to form a liquid electrode under the lower surface of a substrate. Accordingly, a current flows between a cathode and an anode to anodize the substrate. The apparatus also has a mechanism which makes a chemical solution overflow from a chemical solution container to form a flow of the chemical solution near the lower surface of the substrate.

Abstract: A conveyorized electroplating device having an anode positioned proximate to a plurality of absorptive applicator assemblies that apply a plating solution to a substrate and a conveyor device that grips the substrate thereby isolating the electrical contact from the plating solution. The conveyorized electroplating device has a fluid bed assembly with a manifold and an anode, a conveyor device adjacent to the fluid bed assembly, and a plurality of absorptive applicator assemblies, wherein the plurality of absorptive applicator assemblies are adjacent and in close proximity to the anode and in fluid communication with the fluid bed assembly. The conveyor device isolates the electrical contacts from the plating solution and is able to handle various sizes and thicknesses of substrates.

Abstract: An anode is configured to be used within a metal film plating apparatus. The anode has a substantially planar electric field generating portion and an electrolyte solution chemical reaction portion. The planar electric field generating portion is coated with an inert material that is impervious to the electrolyte solution. In one embodiment, the anode is formed as a perforated anode. In one aspect, the electric field generating portion is formed contiguous with the electrolyte solution chemical reaction portion. In another aspects, the planar electric field generating portion is formed as a distinct member from the electrolyte solution chemical reaction portion.

Abstract: A holder (102) made from an HF-resistant material includes annular suction pads (105, 108). The suction pad (105) is used to hold a small silicon substrate by suction, and the suction pad (108) is used to hold a large silicon substrate by suction. This makes silicon substrates with various sizes processable. A silicon substrate is held by suction by reducing a pressure in a space in a groove of the suction pad by a pump (120). An opening (103) is formed in the holder (102) so that the both surfaces of the silicon substrate are brought into contact with an HF solution (115). The silicon substrate is anodized by applying a DC voltage by using a platinum electrode (109a) as a negative electrode and a platinum electrode (109b) as a positive electrode, and thereby a substrate having a porous layer is produced.