Abstract: A semiconductor device includes a metal substrate including a through-hole aperture having a multi-size cavity including a larger area first cavity portion above a smaller area second cavity portion that defines a first ring around the second cavity portion, where the first cavity portion is sized with area dimensions to receive a semiconductor die having a top side with circuitry coupled to bond pads thereon and a back side with a metal (BSM) layer thereon. The semiconductor die is mounted top side up with the BSM layer on the first ring. A metal die attach layer directly contacts the BSM layer, sidewalls of the bottom cavity portion, and a bottom side of the metal substrate.

Abstract: The disclosure provides a Sn—In electroplating bath that is Pb-free, environmentally safe, operates at room temperature, and does not require changes in existing plating assemblies. Room temperature aging and limited thermal cycling tests show that the electroplated Sn—In alloy film on a Cu substrate effectively mitigates whisker growth.

Abstract: Disclosed herein are embodiments of a coating composition and a method of using the same for forming metal coatings on substrates. In particular embodiments, the coating composition comprises a deep eutectic solvent and/or an ionic liquid; a metal precursor; an alkali metal salt; and an optional additive component. The coating composition and method embodiments disclosed herein provide durable, even, high-surface area coatings on various types of substrates and also can be used at low temperatures.

Abstract: An electroplating system has a vessel assembly holding an electrolyte. A weir thief electrode assembly in the vessel assembly includes a plenum inside of a weir frame. The plenum divided into at least a first, a second and a third virtual thief electrode segment. A plurality of spaced apart openings through the weir frame lead out of the plenum. A weir ring is attached to the weir frame and guides flow of current during electroplating. The electroplating system provides process determined radial and circumferential current density control and does not require changing hardware components during set up.

Abstract: A printed circuit board includes a first wiring structure including first insulating layers and first wiring layers; a second wiring structure disposed on the first wiring structure and including second insulating layers and second wiring layers; and a third wiring structure disposed on the second wiring structure and including a third insulating layer and a third wiring layer disposed on the third insulating layer. At least a portion of at least one of the second wiring layers has a fine pitch, relatively finer than those of the first wiring layers and the third wiring layer, wherein at least a portion of one of the first wiring layers is connected to at least a portion of the third wiring layer through a first wiring via, and wherein the first wiring via penetrates at least one of the first insulating layers, the second insulating layers, and the third insulating layer.

Abstract: The disclosure provides a method comprising inducing a first current between a source of a countercharge and a first electrode, the first current being through an electrolyte. A second current is induced across the first electrode, the second current being transverse to the first current, and the second current inducing a relativistic charge across the first electrode.

Abstract: An electroplating system has a vessel assembly holding an electrolyte. A weir thief electrode assembly in the vessel assembly includes a plenum inside of a weir frame. The plenum divided into at least a first, a second and a third virtual thief electrode segment. A plurality of spaced apart openings through the weir frame lead out of the plenum. A weir ring is attached to the weir frame and guides flow of current during electroplating. The electroplating system provides process determined radial and circumferential current density control and does not require changing hardware components during set up.

Abstract: Methods and compositions for electrodepositing mixed metal reactive metal layers by combining reactive metal complexes with electron withdrawing agents are provided. Modifying the ratio of one reactive metal complex to the other and varying the current density can be used to vary the morphology the metal layer on the substrate.

Abstract: Copper electroplating baths containing primary alcohol alkoxylate block copolymers and ethylene oxide/propylene oxide random copolymers having specific HLB ranges are suitable for filling vias with copper, where such copper deposits are substantially void-free and substantially free of surface defects.

Abstract: The present invention refers to a process for the electrolytic deposition of a zinc or zinc alloy coating on a metallic substrate, a zinc coated metallic substrate having a specific gloss as well as an aqueous alkaline plating bath for the electrolytic deposition of a zinc or zinc alloy coating on a metallic substrate and the use of a zinc plating bath additive in a process for the electrolytic deposition of a zinc or zinc alloy coating on a metallic substrate and for improving the optical appearance and/or the adhesion of a zinc or zinc alloy coating on a metallic substrate.

Abstract: The subject of the present invention is an electrolyte composition for depositing copper on semiconductor substrates covered with a barrier layer. This electrolyte contains the combination of imidazole and 2,2?-bipyridine, used as suppressor, and of thiodiglycolic acid, used as accelerator. The combination of these additives makes it possible to obtain a bottom-up filling on trenches of very small width, typically of less than 100 nm.

Abstract: A magnesium alloy suitable for use as a corrodible downhole article. The alloy has a corrosion rate of at least 50 mg/cm2/day in 15% KCl at 93° C. and a 0.2% proof strength of at least 50 MPa when tested using standard tensile test method ASTM B557-10.

Abstract: A technique that uses a thermoelectric generator for generating electrical power employs a safe, initially dormant, stable, non-radioactive fuel sample which is activated on-demand by a neutron source to initiate and control activation of the fuel sample. The technique allows thermoelectric generators to be fully assembled and stored for extended periods of time before they are deployed for use, and then activated on demand only when the need arises for them to generate power.

Abstract: Apparatus and methods for electroplating are described. Apparatus described herein include anode supports including positioning mechanisms that maintain a consistent distance between the surface of the wafer and the surface of a consumable anode during plating. Greater uniformity control is achieved.

Abstract: A thin indium metal layer is electroplated onto silver to prevent silver tarnishing. The indium and silver composite has high electrical conductivity.

Abstract: A method of depositing aluminum onto a substrate is disclosed. In this method, the substrate is disposed as cathode in an electrochemical cell with an anode and a liquid electrodeposition composition comprising an ionic liquid and a source of aluminum, and aluminum is electroplated onto the substrate. Residual water content in the electroplating bath is controlled by exposure to light in the presence of a photo-oxidation catalyst to decompose the water or species associated with water.

Abstract: A method is provided for manufacturing a component. The method includes connecting a component comprising an internal passage and formed by an additive manufacturing process to a power supply, the component functioning as an anode, connecting a cathode to the power supply, the cathode being disposed in an electrolyte solution, the cathode being positioned externally to the internal passage of the component, contacting the internal passage of the component with the electrolyte solution, and using the power supply, applying a potential difference and current flow between the component and the cathode.

Abstract: The present invention is to provide a substrate holder which can effect a more complete sealing with a sealing member and makes it possible to take a substrate out of the substrate holder easily and securely, and also a plating apparatus provided with the substrate holder. The substrate holder includes: a fixed holding member and a movable holding member for holding a substrate therebetween; a sealing member mounted to the fixed holding member or the movable holding member; and a suction pad for attracting a back surface of the substrate held between the fixed holding member and the movable holding member.

Abstract: A contact layer for an electrical contact is disclosed having bismuth and being tin-free.

Abstract: Reaction products of guanidine compounds or salts thereof, polyepoxide compounds and polyhalogen compounds may be used as levelers in metal electroplating baths, such as copper electroplating baths, to provide good throwing power. Such reaction products may plate with good surface properties of the metal deposits and good physical reliability.

Abstract: For improving the current transfer during the electrolytic metallization of workpieces, a method is proposed: (a) providing a metal depositing apparatus 17, in which the workpiece, at least one anode 40, 41 and a metal deposition electrolyte AE are arranged and which has a device for electric current generation 60 and at least one current feeding device 31 with in each case at least one electrical contact element 34, 35 for making electrical contact with the workpiece; (b) bringing the at least one electrical contact element 34, 35 into contact with the workpiece; and (c) feeding electric current to the workpiece via the at least one electrical contact element 34, 35 in order that the deposition metal deposits on the workpiece. Before method step (b), in a further method step (d), deposition metal is deposited on the at least one electrical contact element 34, 35.

Abstract: The present invention relates to an electrolyte solution comprising at least one solvent as component A, at least one electrolyte as component B and from 0.1 to 20% by weight, based on the total electrolyte solution, of at least one heteroaromatic compound of the general formula (I) as component C, the use of such a compound in electrolyte solutions, the use of such an electrolyte solution in an electrochemical cell or for metal plating, and also electrochemical cells comprising a corresponding electrolyte solution.

Abstract: The present disclosure provides methods and systems for electrorefining high-purity materials, for example, silicon. An exemplary system includes at least one cathode, an anode, and a reference electrode. At least one controller, for example a potentiostat, is used to control the potential difference between a reference electrode and a cathode or anode. The system can be operated in a single phase or multiple phase operation to produce high-purity materials, such as solar-grade silicon.

Abstract: Provided is an anode for electroplating which uses an aqueous solution as an electrolytic solution, and the anode which is low in potential when compared with a conventional anode, able to decrease an electrolytic voltage and an electric energy consumption rate and may also be used as an anode for electroplating various types of metals, and which is low in cost. Also provided is a method for electroplating which uses an aqueous solution as an electrolytic solution, in which the anode is low in potential and electrolytic voltage, thereby making it possible to decrease the electric energy consumption rate. The anode for electroplating of the present invention is an anode for electroplating which uses an aqueous solution as an electrolytic solution, in which a catalytic layer containing amorphous ruthenium oxide and amorphous tantalum oxide is formed on a conductive substrate.

Abstract: The present invention relates to an electrolyte solution comprising at least one solvent as component A, at least one electrolyte as component B and from 0.1 to 20% by weight, based on the total electrolyte solution, of at least one heteroaromatic compound of the general formula (I) as component C, the use of such a compound in electrolyte solutions, the use of such an electrolyte solution in an electrochemical cell or for metal plating, and also electrochemical cells comprising a corresponding electrolyte solution.

Abstract: Solutions and processes for electrodepositing gallium or gallium alloys includes a plating bath free of complexing agents including a gallium salt, an indium salt, a combination thereof, and a combination of any of the preceding salts with copper, an acid, and a solvent, wherein the pH of the solution is in a range selected from the group consisting of from about zero to about 2.6 and greater than about 12.6 to about 14. An optional metalloid may be included in the solution.

Abstract: Provided are a film formation device and a film formation method for forming a metal film, with which metal films with a desired thickness can be continuously formed on surfaces of a plurality of substrates. A film formation device 1A includes at least a positive electrode 11, a negative electrode 12, a solid electrolyte membrane 13 arranged on a surface of the positive electrode 12, between. the positive electrode and a substrate to serve as the negative electrode, and a power supply unit E adapted to apply a voltage across the positive electrode 11 and the substrate B. A voltage is applied across the positive electrode 11 and the substrate B to deposit metal on a surface of the substrate from metal ions contained in the solid electrolyte membrane 13, whereby a metal film F made of metal is formed, The positive electrode 11 is made of a porous body that allows a solution L containing metal ions to pass therethrough and supplies the metal ions to the solid electrolyte membrane 13.

Abstract: A sliding bearing having a composite layer comprising carbon nanostructures (6) incorporated within a metallic matrix (5), and a method of manufacture of such a sliding bearing by electroplating.

Abstract: The present invention relates to an electrochemical cell for generating electrical power that includes an anode, a cathode, a charging electrode and an ionically conductive medium containing at least metal fuel ions and poly(ethylene glycol)tetrahydrofurfuryl. The present invention also relates to a method for charging the cell by electrodeposition of metal fuel on the anode thereof.

Abstract: An electrode for electrochemical processes comprises a substrate of titanium or other valve metal, an intermediate protection layer based on valve metal oxides and a catalytic layer based on oxides of tin and of iridium doped with small amounts of oxides of elements selected between bismuth, antimony, tantalum and niobium. The electrode used in electrometallurgical processes, for example in the electrowinning of metals, as anode for anodic oxygen evolution presents a reduced overvoltage and a higher duration.

Abstract: Techniques for electrodepositing selenium (Se)-containing films are provided. In one aspect, a method of preparing a Se electroplating solution is provided. The method includes the following steps. The solution is formed from a mixture of selenium oxide; an acid selected from the group consisting of alkane sulfonic acid, alkene sulfonic acid, aryl sulfonic acid, heterocyclic sulfonic acid, aromatic sulfonic acid and perchloric acid; and a solvent. A pH of the solution is then adjusted to from about 2.0 to about 3.0. The pH of the solution can be adjusted to from about 2.0 to about 3.0 by adding a base (e.g., sodium hydroxide) to the solution. A Se electroplating solution, an electroplating method and a method for fabricating a photovoltaic device are also provided.

Abstract: The invention provides a system and a process that allow for the selective electrochemical conversion of carbon dioxide to carbon monoxide with high energy efficiency, using a cathode comprised of bismuth in combination with an anode such as an anode comprised of platinum. The electrolysis system may be comprised of a single or two compartment cell and may employ an organic electrolyte or an ionic liquid electrolyte. The invention permits the storage of solar, wind or conventional electric energy by converting carbon dioxide to carbon monoxide and liquid fuels.

Abstract: The present invention describes a method of producing a p-type light-absorbing semiconductor copper zinc tin selenide/sulfide (Cu2(ZnxSn2-x)(SySe1-y)4) (abbreviated CZTS) with electrochemical deposition. It can be used in the production of solar cell when combined with an n-type inorganic or an organic semiconductor layer. The present method comprises a one-step or a sequence of depositions using electroplating to fabricate a low-cost and large-area CZTS solar cell, without using expensive and complicated deposition techniques or highly toxic and flammable chemicals in the production process. The present method significantly reduces the cost and energy requirement for production of solar cell.

Abstract: An aluminium alloy sheet product or extruded product for fluxless brazing, including an aluminium alloy core having on at least one face an aluminium filler clad layer containing 4% to 15% of Si, the filler clad layer having an inner-surface and an outer-surface, the inner-surface is facing the aluminium alloy core and the outer-surface is facing a coating layer of 2 to 45 mg/sq.m of Bi or of a Bi-based alloy. Furthermore, a method of brazing a brazed assembly incorporating at least one member made from the brazing sheet material.

Abstract: The subject of the present invention is a method of the electrolytic isolation of arsenic from industrial electrolytes including waste electrolytes used in the electrorafination of copper after its prior decopperisation.

Abstract: A copper electroplating method including dipping a substrate in a copper electroplating solution, the substrate including a seed layer; and forming a copper electroplating layer on the seed layer, wherein the copper electroplating solution includes water, a copper supply source, an electrolytic material, and a first additive, the first additive includes a compound represented by Formula 1, below:

Abstract: An electroplating solution and method for producing an electroplating solution containing a gallium salt, an ionic compound and a solvent that results in a gallium thin film that can be deposited on a substrate.

Abstract: A system and method generate atomic hydrogen (H) for deposition of a pure metal in a three-dimensional (3D) structure. The method includes forming a monolayer of a compound that includes the pure metal. The method also includes depositing the monolayer on the 3D structure and immersing the 3D structure with the monolayer in an electrochemical cell chamber including an electrolyte. Applying a negative bias voltage to the 3D structure with the monolayer and a positive bias voltage to a counter electrode generates atomic hydrogen from the electrolyte and deposits the pure metal from the monolayer in the 3D structure.

Abstract: An electrode wire for electro-discharge machining includes a core wire including a first metal including copper and having one of phases ?, ?+??, and ??, a first alloy layer formed at a boundary region between the core wire and a second metal plated on an outer surface of the core wire due to mutual diffusion between the core wire and the second metal and having a phase ??, and a second alloy layer formed due to diffusion of the first metal to the second metal and having a phase ? and/a phase ?. A core wire material is erupted onto a surface of the electrode wire for electro-discharge machining, which includes the core wire, the first alloy layer, and the second alloy layer, along cracks appearing on the second alloy layer, so that a plurality of grains are formed on the surface of the electrode wire.

Abstract: A gas sensor operable at ambient conditions, the sensor includes functionalized feather-like tellurium (Te) nanostructures on single-walled carbon nanotube (SWNTs) networks.

Abstract: A copper electroplating bath useful in filling non-through holes formed on a substrate which contains a water-soluble copper salt, sulfuric acid, and chloride ions and further contains a brightener, a carrier, and a leveler as additives, wherein the leveler contains at least one water-soluble polymer containing quaternary nitrogen, tertiary nitrogen, or both which are cationizable in a solution. In the copper electroplating bath, the filling power for non-through holes formed on a substrate can be easily controlled so as to fit to the size of the holes only by changing the quaternary nitrogen to tertiary nitrogen ratio of the water-soluble polymer to be used as the leveler, which enables copper electroplating of non-through holes of various sizes with a good fit to the sizes.

Abstract: A method of harvesting Group I metals from waste materials, including agitating Group I metal-containing materials in water to define a Group I metal-rich aqueous solution, removing any solid material from the Group I metal-rich aqueous solution, and filling the cathode portion of an electrochemical cell with the Group I metal-rich aqueous solution. A current collector is introduced into the Group I metal-rich aqueous solution, a steel electrode is operationally connected to the cathode portion, and the cathode portion is operated to deposite Group I metal onto the steel electrode.

Abstract: An apparatus for electroplating a layer of metal onto the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer and an auxiliary cathode located between the anode and the ionically resistive ionically permeable element. The ionically resistive ionically permeable element serves to modulate ionic current at the wafer surface. The auxiliary cathode is configured to shape the current distribution from the anode. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.

Abstract: Electrochemically deposited indium composites are disclosed. The indium composites include indium metal or an alloy of indium with one or more ceramic materials. The indium composites have high bulk thermal conductivities. Articles containing the indium composites also are disclosed.

Abstract: An aluminum alloy component has a surface region alloyed with an anodic metal to increase corrosion resistance in aqueous environments with high salinity or sulfur content.

Abstract: In a through hole closing process, a metal plate is attached to one surface of a conductive base member having a plurality of through holes by the use of a magnet, in a copper plating process, a copper plating layer is formed on the conductive base member and the metal plate exposed within the through holes, from the side of the conductive base member where the metal plate is not attached, thereby to fill up the through holes, in a film forming process, a Pd alloy film is formed by plating on the surface of the conductive base member after removal of the metal plate, and in a removal process, the copper plating layer is removed by selective etching, thereby to produce a hydrogen production filter that is used in a reformer a fuel cell so as to be capable of stably producing high purity hydrogen gas.

Abstract: Indium compositions including hydrogen suppressor compounds and methods of electrochemically depositing indium metal from the compositions onto substrates are disclosed. Articles made with the indium compositions are also disclosed.

Abstract: The present invention relates to an anode system for conventional electrolysis cells, a process for the production thereof and its use for the deposition of electrolytic coatings. The anode system is characterized in that the anode (2) is in direct contact with a membrane (3) which completely separates the anode space from the cathode space. This anode system is therefore a direct-contact membrane anode.

Abstract: Provided are cleaning methods and systems to remove unintended metallic deposits from electroplating apparatuses using reverse current deplating techniques. Such cleaning involves positioning a cleaning (deplating) disk in an electroplating cup similar to a regular processed substrate. The front surface of the cleaning disk includes a corrosion resistant conductive material to form electrical connections to deposits on the cup's surfaces. The disk is sealed in the cup and submerged into a plating solution. A reverse current is then applied to the front conductive surface of the disk to initiate deplating of the deposits. Sealing compression in the cup may change during cleaning to cause different deformation of the lip seal and to form new electrical connections to the deposits. The proposed cleaning may be applied to remove deposits formed during electroplating of alloys, in particular, tin-silver alloys widely used for semiconductor and wafer level packaging.

Abstract: Solutions and processes for electrodepositing gallium or gallium alloys includes a plating bath free of complexing agents including a gallium salt, an indium salt, a combination thereof, and a combination of any of the preceding salts with copper, an acid, and a solvent, wherein the pH of the solution is in a range selected from the group consisting of from about zero to about 2.6 and greater than about 12.6 to about 14. An optional metalloid may be included in the solution.