Abstract: Interbody fusion devices and related methods of manufacture are described herein. An example interbody fusion device can include a plurality of vertebral endplates, and a body extending between the vertebral endplates. The body and the vertebral endplates can define an internal cavity. Additionally, each of the vertebral endplates can include a lattice structure and a frame surrounding the lattice structure, where the lattice structure being configured to distribute load. Each of the vertebral endplates can also include a plurality of micro-apertures having an average size between about 2 to about IO micrometers (?m), and a plurality of macro-apertures having an average size between about 300 to about 800 micrometers (?m).

Abstract: Imprinted substrates are often used to produce miniaturized devices for use in electrical, optic and biochemical applications. Imprinting techniques, such as nanoimprinting lithography, may leave residues in the surface of substrates that affect bonding and decrease the quality of the produced devices. An imprinted substrate with residue-free region, or regions with a reduced amount of residue for improved bonding quality is introduced. Methods to produce imprinted substrates without residues from the imprinting process are also introduced. Methods include physical exclusion methods, selective etching methods and energy application methods. These methods may produce residue-free regions in the surface of the substrate that can be used to produce higher strength bonding.

Abstract: Novel polyketanil-based compositions for use as a laser-releasable composition for temporary bonding and laser debonding processes are provided. The inventive compositions can be debonded using various UV lasers, at wavelengths from about 300 nm to about 360 nm, leaving behind little to no debris. The layers formed from these compositions possess good thermal stabilities and are resistant to common solvents used in semiconductor processing. The compositions can also be used as build-up layers for redistribution layer formation.

Abstract: A medical catheter assembly includes a catheter tip coupled to a distal end of an elongate catheter member and is symmetric about a plane defined by a septum of the elongate catheter member. The catheter tip defines first and second lumens, and the catheter tip defines first and second openings in the distal portion of the catheter tip. Each opening of the catheter tip is defined by a respective side surface of the catheter tip. Each opening is in fluid communication with a respective one of the first and second lumens of the catheter tip and with a respective one of a pair of lumens defined by the elongate catheter member. The distance between upper and lower surfaces of the catheter tip decreases from a distal end of the proximal portion toward a closed distal end of the catheter tip.

Abstract: A substrate polishing method includes a stock polishing step comprising a plurality of stock polishing sub-steps in which a first polishing solution, a second polishing solution, and a third polishing solution are applied, in that order, to a substrate. A content COMP1 of water-soluble polymer P1 in the first polishing solution, a content COMP2 of water-soluble polymer P2 in the second polishing solution, and a content COMP3 of water-soluble polymer P3 in the third polishing solution satisfy COMP1<COMP2<COMP3, and any one of the following conditions is satisfied: (1) average primary particle diameter DA3 of abrasive A3 in the third polishing solution is smaller than average primary particle diameter DA1 of abrasive A1 in the first polishing solution and average primary particle diameter DA2 of abrasive A2 in the second polishing solution; and (2) the third polishing solution does not contain abrasive A3.

Abstract: A marker delivery device comprises a marker deployer cannula, a push rod, a biopsy site marker, and a ramped tip. The marker deployer cannula may have a marker exit in communication with an interior lumen of the cannula. The marker exit may comprise a distal end with a ramped surface. The biopsy site marker may be configured with a plurality of edges. The plurality of edges may be configured to engage at least a portion of the interior lumen of the cannula. The ramped tip may comprise a first ramped surface and a second ramped surface, the second ramped surface may align with the ramped surface of the distal end of the marker exit. The push rod may be used to push the biopsy site marker up the ramped tip and through the marker exit.

Abstract: A slurry composition for polishing a metal layer and a method for fabricating a semiconductor device using the same are provided. The slurry composition for polishing a metal layer includes polishing particles including a metal oxide, an oxidizer including hydrogen peroxide, and a first polishing regulator including at least one selected from a group consisting of phosphate, phosphite, hypophosphite, and metaphosphate, wherein a content of the oxidizer is 0.01 wt % to 0.09 wt % with respect to 100 wt % of the slurry composition for polishing the metal layer.

Abstract: A slurry composition for use in chemical-mechanical polishing sapphire substrates and includes an alkaline pH adjuster and an accelerant.

Abstract: A chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) containing (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) contains: (A) Inorganic particles, (B) a substituted aromatic compound with at least one carboxylic acid function as corrosion inhibitor, (C) at least one amino acid, (D) at least one oxidizer, (E) an aqueous medium, wherein the CMP composition (Q) has a pH of from 7 to 10.

Abstract: Process for manufacturing a hybrid timepiece component, comprising structuring at least one wafer (14) of a first micromachinable material so as to form at least one through-opening (15) within the wafer (14), said structured wafer (14) being intended to form a first part (4) of the hybrid timepiece component; and depositing a metal by electroforming, so that the metal extends through the through-opening (15) and over the two upper and lower faces of the wafer (14) as a single piece resulting from one and the same electroforming step, the electroformed metal being intended to form a second part (8) of the hybrid timepiece component.

Abstract: There are provided a processing method for a wide-bandgap semiconductor substrate and an apparatus therefor that use no abrasives or no abrasive grains, or no solution having a large environmental burden at all, can process a single crystal, which is SiC, GaN, AlGaN, or AlN, at a variety of processing speed, can obtain a surface of higher quality than the quality of a surface finished by CMP, and also have an excellent compatibility with a clean room. A catalytic substance having a function of promoting the direct hydrolysis of a work piece (5) or promoting the hydrolysis of an oxide film on the surface of the work piece is used as a processing reference plane (3). In the presence of water (1), the work piece is brought into contact with or extremely close to the processing reference plane at a predetermined pressure.

Abstract: A method for producing a device having at least one internal feature includes manufacturing an internal volume of the internal features out of a first material, disposing the internal volume in a parent material that has a higher melting point than the first material, causing the internal volume to melt within the parent material, and allowing at least a portion of the first material to diffuse into the parent material, thereby leaving behind the at least one internal feature within the parent material.

Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) abrasive particles, (b) a cobalt accelerator selected from a compound having the formula: NR1R2R3 wherein R1, R2, and R3 are independently selected from hydrogen, carboxyalkyl, substituted carboxyalkyl, hydroxyalkyl, substituted hydroxyalkyl and aminocarbonylalkyl, wherein none or one of R1, R2, and R3 are hydrogen; dicarboxyheterocycles; heterocyclylalkyl-?-amino acids; N-(amidoalkyl)amino acids; unsubstituted heterocycles; alkyl-substituted heterocycles; substituted-alkyl-substituted heterocycles; N-aminoalkyl-?-amino acids; and combinations thereof, (c) a cobalt corrosion inhibitor, (d) an oxidizing agent that oxidizes a metal, and (e) water, wherein the polishing composition has a pH of about 3 to about 8.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.

Abstract: CMP processes, tools and slurries utilize composite particles that include core particles having organosilica particles disposed about the core particles. Using these processes, tools and slurries can enhance removal rates, reduce defectivity and increase cleanability with respect to comparable systems and substrates.

Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) abrasive particles, (b) a cobalt accelerator selected from a compound having the formula: NR1R2R3 wherein R1, R2, and R3 are independently selected from hydrogen, carboxyalkyl, substituted carboxyalkyl, hydroxyalkyl, substituted hydroxyalkyl and aminocarbonylalkyl, wherein none or one of R1, R2, and R3 are hydrogen; dicarboxyheterocycles; heterocyclylalkyl-?-amino acids; N-(amidoalkyl)amino acids; unsubstituted heterocycles; alkyl-substituted heterocycles; substituted-alkyl-substituted heterocycles; N-aminoalkyl-?-amino acids; and combinations thereof, (c) a cobalt corrosion inhibitor, (d) an oxidizing agent that oxidizes a metal, and (e) water, wherein the polishing composition has a pH of about 3 to about 8.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.

Abstract: A chemical-mechanical polishing composition includes colloidal silica abrasive particles having a chemical compound incorporated therein. The chemical compound may include a nitrogen-containing compound such as an aminosilane or a phosphorus-containing compound. Methods for employing such compositions include applying the composition to a semiconductor substrate to remove at least a portion of a layer.

Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine compound in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

Abstract: A polishing slurry for tungsten and a substrate polishing method are disclosed. The polishing slurry includes an abrasive for performing polishing and having positive zeta potential, and a potential modulator for promoting the oxidation of the tungsten and for controlling the zeta potential of the abrasive.

Abstract: A method of treating a hole formed in a catheter includes providing the catheter with an opening formed in a wall of the catheter from an external surface of the catheter to an internal surface of a lumen of the catheter such that the catheter has a sharp external edge formed between the external surface and the opening and a sharp internal edge formed between the opening and the internal surface of the lumen of the catheter. The method additionally includes pushing a proximal end of a mandrel into the opening formed in the wall of the catheter and rounding the sharp external edge of the opening formed in the wall of the catheter with a distal end of the mandrel. The method further includes maintaining the sharp internal edge formed between the opening and the internal surface of the catheter.

Abstract: A catheter having a catheter body with a lumen and a distal lumen opening. The catheter's lumen extends through the catheter body along a longitudinal axis of the catheter body. A hole is formed through a wall of a distal portion of the catheter body. A portion of the proximal surface of the hole is inclined at an acute angle with respect to the longitudinal axis of the catheter body. The acute angle of the proximal hole surface opens proximally with respect to the catheter body.

Abstract: To provide a means by which polishing rate can further be improved in a polishing composition to be used for an application of polishing an object to be polished containing a metal element or a semimetal element. Oxo acid containing a metal element or a semimetal element, and water are contained in a polishing composition to be used for an application of polishing an object to be polished containing a metal element or a semimetal element.

Abstract: A single crystal SiC substrate capable of forming a good epitaxial thin film thereon to give a high-quality epitaxial substrate is provided. The single crystal SiC substrate has a CMP-treated surface and has 5 or fewer lattice defects measuring 30 nm or more in a direction parallel to the polished surface and 50 nm or more in a direction perpendicular to the polished surface as counted within a depth of 100 nm from the polished surface in a direction perpendicular to the polished surface and a length of 10 ?m in a direction parallel to the polished surface when observed in cross-section using a transmission electron microscope under the 00L reflection or the h-h0 reflection, where L and h are each an integer other than 0.

Abstract: An apparatus and method for polishing and strengthening a substrate are disclosed. In one aspect, the apparatus includes a table on which a substrate is placed, a powder supply portion for polishing a surface of the substrate, a substance supply portion, and an injector. The powder supply portion is placed over the table. The substance supply portion is configured to supply a substance onto the polished surface of the substrate. The injector is configured to inject the powder from the powder supply portion onto the surface of the substrate and the substance from the substance supply portion onto the polished surface of the substrate.

Abstract: A polishing liquid comprising an abrasive grain, an additive, and water, wherein the abrasive grain includes a hydroxide of a tetravalent metal element, produces absorbance of 1.00 or more for light having a wavelength of 400 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %, and produces light transmittance of 50%/cm or more for light having a wavelength of 500 nm in an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass %, and a difference between a NO3? concentration of an aqueous dispersion having a content of the abrasive grain adjusted to 1.0 mass % and a NO3? concentration after retaining the aqueous dispersion at 60° C. for 72 hours is 200 ppm or less.

Abstract: The invention provides a polishing composition that contains (a) ?-alumina particles that have an average particle size of about 250 nm to about 300 nm, (b) a per-type oxidizing agent, (c) a complexing agent, wherein the complexing agent is an amino acid or an organic acid, and (d) water. The invention also provides a method of polishing a substrate, especially a nickel-phosphorous substrate, with the polishing composition.

Abstract: An abrasive composition for polishing substrates including a plurality of abrasive particles having a poly-dispersed particle size distribution with median particle size, by volume, being about 20 nanometers to about 100 nanometers; a span value, by volume, being greater than or equal to about 15 nanometers, wherein the fraction of particles greater than about 100 nanometers is less than or equal to about 20% by volume of the abrasive particles.

Abstract: Damascene processes using physical vapor deposition (PVD) sputter carbon film as a chemical mechanical planarization (CMP) stop layer for forming a magnetic recording head are provided. In one embodiment, one such process includes providing an insulator, removing a portion of the insulator to form a trench within the insulator, depositing a carbon material on first portions of the insulator using a physical vapor deposition process, disposing at least one ferromagnetic material on second portions of the insulator to form a pole including a portion of the ferromagnetic material within the trench, and performing a chemical mechanical planarization on the at least one ferromagnetic material using at least a portion of the carbon material as a stop for the chemical mechanical planarization.

Abstract: Disclosed are a chemical-mechanical polishing composition and a method of polishing a substrate. The polishing composition comprises wet-process ceria abrasive particles, (e.g., about 120 nm or less), at least one alcohol amine, at least one surfactant having at least one hydrophilic moiety and at least one hydrophobic moiety, the surfactant having a molecular weight of about 1000, and water, wherein the polishing composition has a pH of about 6. The polishing composition can be used, e.g., to polish any suitable substrate, such as a polysilicon wafer used in the semiconductor industry.

Abstract: Described herein are coating compositions for protecting one-glass solution (OGS) glasses and other display glasses during processing. The coatings are non-reactive to typical indium-tin oxide touch components, metal electrodes, and black matrix inks, and can thus be used to over-coat these materials. In one aspect, the coating compositions described herein can be applied by a screen printing application process in a single layer or in multiple layers and are compatible with CNC edge grinding and acid etching. Further, the protective coatings are rigid, but not brittle, and are durable but still able to be processed rapidly. Additionally, the protective coatings are transparent, allowing alignment marks on the substrates to be visible. Finally, the protective coatings can easily be removed after substrate processing has been completed.

Abstract: Two-part implant for attachment of artificial teeth comprising a base body having a bone contact surface and a soft tissue contact surface. The soft tissue contact surface is at least partially hydroxylated or silanated which results in an improved soft tissue integration.

Abstract: The present invention provides an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, and a method of using it for etching a multilayer thin film containing a copper layer and a titanium layer, that is, an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, which comprises (A) hydrogen peroxide, (B) nitric acid, (C) a fluoride ion source, (D) an azole, (E) a quaternary ammonium hydroxide and (F) a hydrogen peroxide stabilizer and has a pH of from 1.5 to 2.5, and a etching method of using it.

Abstract: There is provided a polishing composition capable of suppressing formation of a stepped portion caused by etching of a surface of a polishing object including a portion containing a group IV material when the polishing object is polished. The present invention relates to a polishing composition for polishing of a polishing object including a portion that contains a group IV material, and the polishing composition contains an oxidizing agent and an anticorrosive agent. Preferably, the anticorrosive agent includes at least one selected from the group consisting of compounds in which two or more carbonyl groups contained in a molecule are bonded through a carbon atom in the molecule. To be more specific, preferably, the anticorrosive agent includes at least one selected from the group consisting of a 1,3-diketone compound, a 1,4-diketone compound, and a triketone compound.

Abstract: A pattern forming method includes forming a coating film containing a hydrophilic first homopolymer having a first bonding group and a hydrophobic second homopolymer having a second bonding group capable of bonding with the first bonding group, forming a bond between the first and second bonding group to produce a block copolymer of the first and second homopolymers, and heating the coating film to microphase-separating the copolymer into a hydrophilic domain and a hydrophobic domain. The hydrophilic and hydrophobic domains are arranged alternately. The bond is broken, then selectively dissolving-removing either domain by a solvent to provide a polymer pattern of a remainder domain.

Abstract: Disclosed is a method for producing a porous polymer film. This method includes the steps of: (I) irradiating a polymer film with an ion beam of accelerated ions so as to form a polymer film that has collided with the ions in the beam; and (II) chemically etching the polymer film formed in the step (I) so as to form openings and/or through holes corresponding to tracks of the colliding ions left in the polymer film. In the step (I), the polymer film is placed in an atmosphere with a pressure of 100 Pa or more, and the polymer film placed in the atmosphere is irradiated with the ion beam that has passed through a beam line maintained at a lower pressure than the pressure of the atmosphere and through a pressure barrier sheet disposed at an end of the beam line to separate the beam line from the atmosphere.

Abstract: A method for manufacturing a fuel contacting component that facilitates reducing coke formation on at least one surface of the fuel contacting component is disclosed herein. The method includes applying a slurry composition including a powder including aluminum to the component surface, wherein the fuel contacting component is formed by an additive manufacturing process. The slurry composition is heat treated to diffuse the aluminum into the component surface. The heat treatment comprises forming a diffusion aluminide coating on the component surface, wherein the diffusion coating comprises a diffusion sublayer formed on the component surface and an additive sublayer formed on the diffusion sublayer. The method further comprises removing the additive sublayer of the diffusion aluminide coating with at least one aqueous solution such that the diffusion sublayer and the component surface are substantially unaffected, wherein the diffusion layer facilitates preventing coke formation on component surface.

Abstract: A method for single side texturing of a crystalline semiconductor substrate (10) comprises: providing a substrate (10), for example a semiconductor substrate, comprising a first surface (12) and a second surface (14) opposite to one another with respect to the substrate (10); providing a masking layer (21) with a random pattern on the first surface (12) of the substrate (10); and etching the substrate (10) in a polishing solution, thereby texturing the first surface (12) of the substrate (10) and polishing the second surface (14) in a single wet etching step.

Abstract: A process for providing a topography to the surface of a dental implant, the surface being made of a ceramic material having yttria-stabilized zirconia, the process including: providing a macroscopic roughness to the surface of the dental implant by a mechanical process and/or injection molding technique; and etching at least a part of the roughened surface, wherein etching is carried out using an etching solution having hydrofluoric acid at a temperature of 70° C. at least, such that discrete grains or agglomerates of grains are removed from the yttria-stabilized zirconia, thereby forming recesses and cavities in the roughened surface is disclosed.

Abstract: Disclosed are a polishing composition and method of polishing a substrate. The composition has low-load (e.g., up to about 0.1 wt. %) of abrasive particles. The polishing composition also contains water and at least one anionic surfactant. In some embodiments, the abrasive particles are alpha alumina particles (e.g., coated with organic polymer). The polishing composition can be used, e.g., to polish a substrate of weak strength such as an organic polymer. An agent for oxidizing at least one of silicon and organic polymer is included in the composition in some embodiments.

Abstract: Disclosed is a method for polishing a silicon wafer, wherein a surface to be polished of a silicon wafer is rough polished, while supplying a polishing liquid, which is obtained by adding a water-soluble polymer to an aqueous alkaline solution that contains no free abrasive grains, to a polishing cloth. Consequently, the surface to be polished can be polished at high polishing rate and the flatness of the edge portion including roll-off and roll-up can be controlled.

Abstract: A method and apparatus for modifying low emissivity (low-E) coated glass, so that windows using the processed glass allow uninterrupted use of RF devices within commercial or residential buildings. Glass processed in the manner described herein will not significantly diminish the energy conserving properties of the low-E coated glass. This method and apparatus disrupts the conductivity of the coating in small regions. In an embodiment, the method and apparatus ablates the low-E coating along narrow contiguous paths, such that electrical conductivity can no longer occur across the paths. The paths may take the form of intersecting curves and/or lines, so that the remaining coating consists of electrically isolated areas. The method and apparatus are applicable both to treating glass panels at the factory as well as treating windows in-situ after installation.

Abstract: The present invention includes methods and materials for cleaning materials, particles, or chemicals from a substrate with a brush or pad. The method comprising: engaging a surface of a rotating wafer with an outer circumferential surface of a rotating cylindrical foam roller, the cylindrical foam roller having a plurality of circumferentially and outwardly extending spaced apart nodules extending from the outer surface, each nodule defining a height extending from the outer surface of the cylindrical foam roller to a substrate engagement surface of the nodule, the substrate engagement surface of one or more of the nodules having a rounded configuration; and positioning the cylindrical foam roller on the substrate such that the one or more nodules are positioned to have only the rounded substrate engagement surface contact the substrate such that no linear surface of the one or more nodules contacts the substrate.

Abstract: A method and apparatus for conditioning a processing surface of a cylindrical roller disposed in a brush box is described. In one embodiment, a method for processing a substrate is described. The method includes transferring a substrate to a tank, positioning the substrate between two cylindrical rollers disposed in the tank, moving each of the two cylindrical rollers into a first position where a processing surface of each of the cylindrical rollers contacts major surfaces of the substrate, processing the substrate by providing relative motion between at least one of the two cylindrical rollers and the substrate, moving each of the two cylindrical rollers to a second position that is spaced apart from the major surfaces of the substrate, the second position including contacting the processing surface with a conditioning device, and transferring the substrate out of the tank while conditioning the processing surface.

Abstract: The invention provides a chemical-mechanical polishing composition containing a ceria abrasive and a polymer of formula I: wherein X1 and X2, Y1 and Y2, Z1 and Z2, R1, R2, R3, and R4, and m are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.

Abstract: A method of forming an aperture (e.g., a through via, a blind via, a trench, an alignment feature, etc.) within a substrate includes irradiating a substrate with a laser beam to form a laser-machined feature having a sidewall. The laser-machined feature is then processed to change at least one characteristic (e.g., the sidewall surface roughness, diameter, taper, aspect ratio, cross-sectional profile, etc.) of the laser-machined feature. The laser-machined feature can be processed to form the aperture by performing an isotropic wet-etch process employing an etchant solution containing HNO3, HF and, optionally acetic acid.

Abstract: Greater planarity is achieved between surfaces of a conductive structure and a layer within which the conductive structure resides. A portion of the conductive structure protruding above the surface of the layer is selectively oxidized, at least in part, to form an oxidized portion. The oxidized portion is then removed, at least partially, to facilitate achieving greater planarity. The protruding portions may optionally be formed by selectively disposing conductive material over the conductive structure, when that the conductive structure is initially recessed below the surface of the layer. A further embodiment includes selectively oxidizing a portion of the conductive structure below the surface of the layer, removing at least some of the oxidized portion so that an upper surface of the conductive structure is below the upper surface of the layer, and planarizing the upper surface of the layer to the upper surface of the conductive structure.

Abstract: Provided is a process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of borophosphosilicate glass (BPSG) material in the presence of a chemical mechanical polishing (CMP) composition which comprises: (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of anionic phosphate or phosphonate as dispersing agent or charge reversal agent, (C) at least one type of surfactant, and (D) an aqueous medium.

Abstract: A blanket stop layer is conformally formed on a layer with a large step height. A first chemical mechanical polishing process is performed to remove the blanket stop layer atop the layer in the raised region. A second chemical mechanical polishing process is performed to planarize the wafer using the blanket stop layer as a stop layer when the layer is lower than or at a same level as the blanket stop layer or using the layer as a stop layer when the blanket stop layer is lower than or at a same level as the layer, or a selective dry etch is performed to remove the layer in the raised region. Thus, the layer in the raised region can be easily removed without occurrence of dishing in the non-raised region which is protected by the blanket stop layer.

Abstract: A cleaning solution of the present invention contains a sodium ion, a potassium ion, an iron ion, an ammonium salt of a sulfuric ester represented by General Formula (1), and water, and each content of the sodium ion, the potassium ion, and the iron ion is 1 ppb to 500 ppb. ROSO3—(X)+ (1) where R is an alkyl group with a carbon number of 8-22 or an alkenyl group with a carbon number of 8-22, and (X)+ is an ammonium ion.

Abstract: A process of fabricating a heat dissipation substrate is provided. A metal substrate having an upper surface, a lower surface, first recesses located on the upper surface and second recesses located on the lower surface is provided. The metal substrate is divided into carrier units and connecting units connecting the carrier units. A first and a second insulating materials are respectively filled into the first and the recesses. A first conductive layer is formed on the upper surface and the first insulating material. A second conductive layer is formed on the lower surface and the second insulating material. The first and the second conductive layers are patterned to form a first and a second patterned conductive layers. The first and the second insulating materials are taken as an etching mask to etch the connecting units of the metal substrate so as to form a plurality of individual heat dissipation substrates.

Abstract: An indication that an electrostatic chuck has a gas leakage rate that exceeds a leakage threshold is received. A determination is made as to whether a first polishing procedure that polishes surface features on a surface of the electrostatic chuck without removing the surface features would reduce a thickness of the surface features to below a thickness threshold. The electrostatic chuck is polished using the first polishing procedure responsive to determining that the first polishing procedure would not reduce the thickness of the surface features to below the thickness threshold. Responsive to determining that the first polishing procedure would reduce the thickness of the surface features to below the thickness threshold, a second polishing procedure that removes the surface features from the surface of the electrostatic chuck is performed. After the second polishing procedure, new surface features are formed on the surface of the electrostatic chuck.