Abstract: Methods and systems for calibrating a transmission electron microscope are disclosed. A fiducial mark on the sample holder is used to identify known reference points so that a current collection area and a through-hole on the sample holder can be located. A plurality of beam current and beam area measurements are taken, and calibration tables are extrapolated from the measurements for a full range of microscope parameters. The calibration tables are then used to determine electron dose of a sample during an experiment at a given configuration.

Abstract: A magnetic-disk substrate has a pair of main surfaces, and an arithmetic average roughness Ra of each of the main surfaces is 0.11 nm or less. The arithmetic average roughness Ra is a value obtained through measurement using an atomic force microscope provided with a probe having a probe tip provided with a carbon nanofiber rod-shaped member. The magnetic-disk substrate is made of glass or aluminum alloy.

Abstract: The present invention provides a charged particle beam apparatus capable of efficiently reducing the effect of a residual magnetic field when SEM observation is performed. The charged particle beam apparatus according to the present invention includes a first mode for passing a direct current to a second coil after turning off a first coil, and a second mode for passing an alternating current to the second coil after turning off the first coil.

Abstract: Provided is a charged particle beam system capable of reducing the force applied to a sample when a chuck device grips the sample. The charged particle beam system is typified by an electron microscope including a sample chamber, a sample exchange chamber connected to the sample chamber, a sample container capable of being removably attached in the sample exchange chamber, and a transport device for transporting the sample between the sample container and the sample exchange chamber. The transport device includes the chuck device for gripping the sample, a drive mechanism for moving the chuck device in a given direction, a mechanical driver for actuating the chuck device, and a power transmission mechanism for transmitting power of the mechanical driver to the chuck device. The power transmission mechanism includes a shaft and a resilient member that elastically deforms when a force in the given direction is applied to the shaft.

Abstract: Systems and techniques are provided for a camera server for heterogeneous cameras. A camera server may include a computing device that may a receive image data from a first camera and second image data from a second camera of a heterogenous system that may be a trapped ion quantum computer. The first camera may observe trapped ions. The second camera may observe optical systems and laser beams. The second image data may have a different format than the first image data. The computing device may convert the image data and the second image data into a format for a common data structure for image data, send the image data in the format for the common data structure for image data to client computing devices, and send the second image data in the format for the common data structure for image data to additional client computing devices.

Abstract: Control system configured for sample tracking in an electron microscope environment registers a movement associated with a region of interest located within an active area of a sample under observation with an electron microscope. The registered movement includes at least one directional constituent. The region of interest is positioned within a field of view of the electron microscope. The control system directs an adjustment of the electron microscope control component to one or more of dynamically center and dynamically focus the view through the electron microscope of the region of interest. The adjustment comprises one or more of a magnitude element and a direction element.

Abstract: Control system configured for sample tracking in an electron microscope environment registers a movement associated with a region of interest located within an active area of a sample under observation with an electron microscope. The registered movement includes at least one directional constituent. The region of interest is positioned within a field of view of the electron microscope. The control system directs an adjustment of the electron microscope control component to one or more of dynamically center and dynamically focus the view through the electron microscope of the region of interest. The adjustment comprises one or more of a magnitude element and a direction element.

Abstract: A method of inspecting a wafer quality includes injecting ions into a wafer using an ion beam in an ion implantation process, collecting data about the ion beam by using a Faraday cup, extracting first data from the data about the ion beam, extracting a wafer section from the first data, calculating a feature value of a wafer from the wafer section, and evaluating a quality of the wafer by comparing the feature value with a predetermined threshold or range.

Abstract: A force detector and method for using the same include a lens and a cantilever below the lens. A laser above the lens is configured to emit a beam of light that reflects from a surface of the lens and the cantilever. A processor is configured to determine a force between the lens and the cantilever based on interference between the light reflected from the surface and the light reflected from the cantilever.

Abstract: A charged particle buncher includes a series of spaced apart electrodes arranged to generate a shaped electric field. The series includes a first electrode, a last electrode and one or more intermediate electrodes. The charged particle buncher includes a waveform device attached to the electrodes and configured to apply a periodic potential waveform to each electrode independently in a manner so as to form a quasi-electrostatic time varying potential gradient between adjacent electrodes and to cause spatial distribution of charged particles that form a plurality of nodes and antinodes. The nodes have a charged particle density and the antinodes have substantially no charged particle density, and the nodes and the antinodes are formed from a charged particle beam with an energy greater than 500 keV.

Abstract: Control system configured for sample tracking in an electron microscope environment registers a movement associated with a region of interest located within an active area of a sample under observation with an electron microscope. The registered movement includes at least one directional constituent. The region of interest is positioned within a field of view of the electron microscope. The control system directs an adjustment of the electron microscope control component to one or more of dynamically center and dynamically focus the view through the electron microscope of the region of interest. The adjustment comprises one or more of a magnitude element and a direction element.

Abstract: Producing and storing a first image, of a first, initial surface of the specimen; In a primary modification step, modifying said first surface, thereby yielding a second, modified surface; Producing and storing a second image, of said second surface; Using a mathematical Image Similarity Metric to perform pixel-wise comparison of said second and first images, so as to generate a primary figure of merit for said primary modification step.

Abstract: A secure distance protection for electric power delivery systems under transient conditions is disclosed herein. Upon detection of a transient condition, additional security is added to a distance protection element before a protective action is taken. The transient condition may be detected when an angle of advancement of an operating signal is outside of a predetermined threshold. An unsecure condition may also be detected before applying additional security. The unsecure condition may be detected based on an estimation of a fault within a close-in zone and a voltage magnitude falling below a threshold.

Abstract: In order to provide an ion beam apparatus excellent in safety and stability even when a sample is irradiated with hydrogen ions, the ion beam apparatus includes a vacuum chamber, a gas field ion source that is installed in the vacuum chamber and has an emitter tip, and gas supply means for supplying a gas to the emitter tip. The gas supply means includes a mixed gas chamber that is filled with a hydrogen gas and a gas for diluting the hydrogen gas below an explosive lower limit.

Abstract: A probe for atomic force microscopy comprises a tip for atomic force microscopy oriented in a direction referred to as the longitudinal direction and protrudes from an edge of a substrate in the longitudinal direction, wherein the tip is arranged at one end of a shuttle attached to the substrate at least via a first and via a second structure, which structures are referred to as support structures, at least the first support structure being a flexible structure, extending in a direction referred to as the transverse direction, perpendicular to the longitudinal direction and anchored to the substrate by at least one mechanical linkage in the transverse direction, the support structures being suitable for allowing the shuttle to be displaced in the longitudinal direction. An atomic force microscope comprising at least one such probe is also provided.

Abstract: An X-ray source uses excitation of a liquid metal beam of ions or ionized droplets to produce an X-ray output with higher brightness than conventional sources. The beam may be accelerated from a liquid metal source using an extraction electrode. The source may have an emitter tip, and the acceleration of the liquid metal may include field emission from a Taylor cone. An electrostatic or electromagnetic focusing electrode may be used to reduce a cross-sectional diameter of the beam. The liquid metal beam has a relatively high velocity as it does not suffer from flow turbulence, thus allowing for a more energetic excitation and a correspondingly higher brightness. A beam dump may also be used to collect the liquid metal beam after excitation, and may be concave with no direct sight lines to either an electron beam cathode or to X-ray windows of an enclosure for the source.

Abstract: A charged particle beam apparatus includes: an irradiation unit that irradiates a sample with a charged particle beam; an image formation section that detects a charged particle generated from the sample due to the irradiation with the charged particle beam and forms an image based on a signal obtained by detecting the charged particle; an input reception unit that receives an observation condition; a derivation section that derives second observation parameters proper for the observation condition based on the received observation condition and first observation parameters stored in a storage unit; and a control unit that controls the irradiation unit based on the second observation parameters.

Abstract: In order to provide an ion beam apparatus excellent in safety and stability even when a sample is irradiated with hydrogen ions, the ion beam apparatus includes a vacuum chamber, a gas field ion source that is installed in the vacuum chamber and has an emitter tip, and gas supply means for supplying a gas to the emitter tip. The gas supply means includes a mixed gas chamber that is filled with a hydrogen gas and a gas for diluting the hydrogen gas below an explosive lower limit.

Abstract: A method of acquiring an image of an image acquiring region of a sample comprises a first step of irradiating and scanning an ion beam in a first scan pattern on a first scan region of a sample, the scan region including therein the image acquiring region, and a second step of detecting secondary charged particles generated by irradiating and scanning the ion beam on the first scan region of the sample and generating first image data of the image acquiring region. The first and second steps are repeated a plurality of times using different scan patterns on different scan regions that differ from the first scan and the first scan region and from one another, each of the different scan regions including therein the image acquiring region, to generate a plurality of image data of the image acquiring region.

Abstract: A probe that enables a circuit board for electronic components, which is a measurement subject, to be disposed more densely. The probe is capable of simultaneously measuring a plurality of locations. The probe includes a plurality of main body portions having central conductors that make contact with connectors, and a first member that binds the plurality of main body portions together. A recess portion, having a base surface from which tip ends of the plurality of central conductors project, is provided in the first member. The recess portion has a sloped surface that flares outward from a base portion of the recess portion toward an opening in the recess portion.

Abstract: A focused ion beam apparatus includes an ion source that emits an ion beam, an extraction electrode that extracts ions from a tip end of an emitter of the ion source, and a first lens electrode that configures a condenser lens by a potential difference with the extraction electrode, the condenser lens focusing the ions extracted by the extraction electrode, in which a strong lens action is generated between the extraction electrode and the first lens electrode so as to focus all ions extracted from the ion source to pass through a hole of the condenser lens including the first lens electrode.

Abstract: A method of investigating a specimen using a charged particle microscope, including: Producing and storing a first image, of a first, initial surface of the specimen; In a primary modification step, modifying said first surface, thereby yielding a second, modified surface; Producing and storing a second image, of said second surface; Using a mathematical Image Similarity Metric to perform pixel-wise comparison of said second and first images, so as to generate a primary figure of merit for said primary modification step.

Abstract: Electron beam manufacturing processes, and systems that perform the processes, are described that utilize real-time analysis and control of the electron beam manufacturing processes by detecting secondary x-rays that are generated as a result of the electron beam contacting a workpiece. The detected secondary x-rays are used to generate, in real-time, a three-dimensional cross-sectional image of the portion or region of the workpiece surrounding the location contacted by the electron beam. In addition, real-time analysis of the three-dimensional cross-sectional image can be used to detect defects and real-time re-work or correction of defects can be performed by directing an electron beam back to an area with a defect.

Abstract: An electron multiplier is positioned relative to at least one dynode to direct a beam of secondary particles from the at least one dynode to a collector area of the electron multiplier and not to a channel area of the electron multiplier for a range of electron multiplier voltages applied by one or more voltage sources to the electron multiplier and for a dynode voltage applied by the one or more voltage sources to the at least one dynode. The electron multiplier includes an aperture with an entrance cone and walls of the entrance cone comprise the collector area and an apex of the entrance cone comprises the channel area. An electron multiplier voltage of the range of electron multiplier voltages is applied to the electron multiplier and the dynode voltage is applied to the at least one dynode using the one or more voltage sources.

Abstract: A focused ion beam apparatus includes a sample tray on which a sample is placed, and a focused ion beam column for irradiating the sample with a focused ion beam to obtain a micro sample-piece. A sample chamber contains therein the sample tray and the focused ion beam column. A side-entry-type carrier is inserted into and removed from the sample chamber, with a front end side of the carrier holding the sample-piece. A sample-piece moving unit moves the sample-piece between the sample tray and the carrier. The sample tray is movable along at least x, y, and z axes, and an end of the sample tray is provided with a carrier engagement part releasably engageable with the carrier so that movement of the sample tray is accompanied by corresponding movement of the carrier.

Abstract: A method of generating a high resolution two-dimensional image of a sample comprising cells and extracellular structures is provided. In certain embodiments, the method comprises: labeling a sample with at least one mass tag, thereby producing a labeled sample; scanning the sample with a secondary ion mass spectrometer (SIMS) ion beam to generate a data set that comprises spatially-addressable measurements of the abundance of the mass tag across an area of the sample; and outputting the data set. In many embodiments, the data set contains the identity and abundance of the mass tag. A system for performing the method is also provided.

Abstract: A charged particle detecting device includes: a holding structure; a first charged particle detector at the terminal portion of the holding structure; a second charged particle detector at the terminal portion of the holding structure; a detector head at the terminal portion of the holding structure; and a first electrode which is transmissive for the first and second species of charged particles covering an entrance opening of the detector head.

Abstract: A method for acquiring an image, in which an image of an image acquiring region is acquired by radiating an ion beam to a sample having a conducting part with a linear edge on a dielectric substrate, includes performing an equal-width scan of the ion beam in a first direction that obliquely intersects the linear edge and sweep in a second direction intersecting the first direction. The ion beam is sequentially scanned in different patterns on different scan regions of parallelogram shape, each of which includes the image acquiring region. Secondary charged particles are detected to generate image data of all the scan regions, and image data of the scan regions are calculated to generate image data of the image acquiring region. The image data of the image acquiring region are synthesized to display the image data of the image acquiring region.

Abstract: A system and method of characterizing a work piece, comprising: scanning an ion beam across an exposed surface of a work piece, the ion beam causing the emission of secondary electrons at multiple imaging points of the scan, the number of secondary electrons emitted varying at different ones of the multiple imaging points; detecting the emitted secondary electrons at each of the multiple imaging point to form an image, the brightness of each point in the image being determined by the number of secondary electrons detected at a corresponding imaging point on the work piece; determining grain boundaries in the work piece using the differences in brightness at different points in the image, the grain boundaries defining multiple grains; directing a charged particle beam toward one or more analysis points within one or more of the grains, the number of the one or more analysis points within each grain being less than the number of imaging points within the same grain; and detecting emissions from the work piec

Abstract: The present invention provides an electron beam device that achieves high spatial resolution and high luminance, while remaining insusceptible to the effects of external disturbance. The present invention relates to an electron beam device, wherein, between, e.g., an electron source for generating an electron beam and an objective lens for focusing the electron beam onto a sample, a high voltage beam tube is disposed close to the electron source and a low voltage beam tube is disposed close to the objective lens. This makes it possible to achieve high luminance while maintaining spatial resolution, even with an SEM that is provided with a type of objective lens that actively leaks a magnetic field onto a sample.

Abstract: A focused ion beam apparatus includes a focused ion beam irradiation mechanism that forms first and second cross-sections in a sample. A first image generation unit generates respective first images, either reflected electron images or secondary electron images, of the first and second cross-sections, and a second image generation unit generates a second image that is an EDS image of the first cross-section. A control section generates a three-dimensional image of a specific composition present in the sample based on the first images and the second image.

Abstract: The present invention relates to a method and apparatus for X-ray phase contrast imaging. The method comprises the following steps: from the measured phase gradient and overall attenuation information, an electron density is computed; the contribution pc of the Compton scattering to the overall attenuation is estimated from the electron density; the contribution pp of the photo-electric absorption to the overall attenuation is estimated from the overall attenuation and the contribution pc; the values pc and pp are used to reconstruct a Compton image and a photo-electric image; by linear combination of these two images, a monochromatic image at a desired energy is obtained.

Abstract: The objective of the present invention is to simply perform image observation through transmitted charged particles. A sample irradiated by a charged particle beam is disposed directly or via a predetermined member on a light-emitting element (23) whereinto charged particles that have traversed or scattered inside the sample enter, causing a light to be emitted therefrom, which is collected and detected efficiently using a light transmission means (203) to generate a transmission charged particle image of the sample.

Abstract: A blanking device for multi-beams includes arrayed plural separate blanking systems, each performing blanking control switching a corresponding beam of multi charged particle beams between a beam ON state and a beam OFF state and each including a first electrode, a first potential applying mechanism applying two different potentials selectively to the first electrode for the blanking control, and a second electrode performing blanking deflection of the corresponding beam, the second electrode being grounded and paired with the first electrode, and a potential change mechanism changing a potential of the second electrode from a ground potential to another potential, wherein when a potential of the first electrode included in one of the separate blanking systems is fixed to the ground potential, the potential change mechanism changes the potential of the second electrode corresponding to the first electrode fixed to the ground potential, from the ground potential to the another potential.

Abstract: A scanning electron microscopy system for mitigating charging artifacts includes a scanning electron microscopy sub-system for acquiring multiple images from a sample. The images include one or more sets of complementary images. The one or more sets of complementary images include a first image acquired along a first scan direction and a second image acquired along a second scan direction opposite to the first scan direction. The system includes a controller communicatively coupled to the scanning electron microscopy sub-system. The controller is configured to receive images of the sample from the scanning electron microscopy sub-system. The controller is further configured to generate a composite image by combining the one or more sets of complementary images.

Abstract: A method and a related system (IMA) for reconstructing an image of an electron density in a subject PAT. An x-ray radiation imager is used to expose the subject PAT to radiation to receive projection data. The reconstruction method combines projection data from two channels, namely Compton scatter based attenuation data pC and phase shift data pd?.

Abstract: A method of cutting a super-hard material (8) using an electron beam (6), wherein the electron beam (6) is directed onto a surface of the super-hard material (8) and moved relative to the surface such that the electron beam (6) moves across the surface of the super-hard material (8) at an electron beam scanning velocity in a range 100 to 5000 mms?1 to cut the super-hard material (8).

Abstract: Methods and devices for magnified imaging of three-dimensional samples are disclosed. The methods include imaging sample sections of a sample section series using a first particle-optical device. Coordinates of the imaged sample point are acquired and stored in such a way that the coordinates of the imaged sample point can be associated with the respective image of this sample point. The method also includes selecting a volume of interest (VOI), and transmitting the coordinates of the selected VOI to a second particle-optical device. In addition, the method includes imaging the selected VOI by means of the second particle-optical device. A plurality of planes of a sample section are imaged in order to obtain a 3D image of the selected VOI.

Abstract: A focused ion beam apparatus has an ion source chamber in which is disposed an emitter for emitting ions. The surface of the emitter is formed of a precious metal, such as platinum, palladium, iridium, rhodium or gold. A gas supply unit supplies nitrogen gas to the ion source chamber so that the nitrogen gas adsorbs on the surface of the emitter. An extracting electrode is spaced from the emitter, and a voltage is applied to the extracting electrode to ionize the adsorbed nitrogen gas and extract nitrogen ions in the form of an ion beam. A temperature control unit controls the temperature of the emitter.

Abstract: A TEM sample preparation method including: placing a thin sample on a sample holder so that a first side surface of the thin sample which is closer to a desired observation target is opposed to a focused ion beam column; setting a processing region, which is to be subjected to etching processing by a focused ion beam so as to form a thin film portion including the observation target and having a thickness direction substantially parallel to a thickness direction of the thin sample, to a region of the first side surface that is adjacent to the thin film portion; and performing the etching processing to a portion of the thin sample extending from the first side surface thereof to a front surface thereof by irradiating the processing region with the focused ion beam from the focused ion beam column.

Abstract: A charged particle beam device (1) includes a charged particle optical lens barrel (10), a support housing (20) equipped with the charged particle optical lens barrel (10) thereon, and an insertion housing (30) inserted in the support housing (20). A first aperture member (15) is disposed in the vicinity of the center of the magnetic field of an objective lens, and a second aperture member (15) is disposed so as to externally close an opening part provided at the upper side of the insertion housing (30). Further, when a primary charged particle beam (12) is irradiated to a sample (60) arranged under the lower side of the second aperture member (31), secondary charged particles thus emitted are detected by a detector (16).

Abstract: A pattern defect inspection method includes generating electron beam irradiation point track data on the basis of first data on an inspection target pattern, irradiating the electron beam to the inspection target pattern in accordance with the electron beam irradiation point track data, detecting secondary electrons generated from the inspection target pattern due to the irradiation of the electron beam, acquiring second data regarding a signal intensity of the secondary electrons from a signal of the detected secondary electrons, and detecting an abnormal point from the second data and outputting the abnormal point as a defect of the inspection target pattern. The electron beam irradiation point track data includes data on a track of irradiation points of an electron beam to the inspection target pattern and is intended to control over scanning with the electron beam, the electron beam irradiation point track data.

Abstract: Methodologies and an apparatus for enabling scatterometry to be used to estimate dimensions of fabricated semiconductor devices are provided. Embodiments include initiating scatterometry on a fabricated test structure comprising a two-dimensional array of features, each of the features being horizontally separated from an adjacent one of the features by a narrow trench region extending a first distance in a horizontal direction and each of the features being vertically separated from an adjacent one of the features by an isolated trench region extending a second distance in a vertical direction. A scattering spectra corresponding to one or more physical characteristics of the fabricated test structure based on results of the scatterometry is determined. The scattering spectra is associated with the one or more physical characteristics in a library for estimating at least one physical dimension of a fabricated structure.

Abstract: Conventionally, in a general-purpose scanning electron microscope, the maximum accelerating voltage which can be set is low, and hence thin crystal samples which can be observed under normal high-resolution observation conditions are limited to samples with large lattice spacing. For this reason, there has no means for accurately performing magnification calibration. As means for solving this problem, the present invention includes an electron source which generates an electron beam, a deflector which deflects the electron beam so as to scan a sample with the electron beam, an objective lens which focuses the electron beam on the sample, a detector which detects an elastically scattered electron and an inelastically scattered electron which are transmitted through the sample, and an aperture disposed between the sample and the detector to control detection angles of the elastically scattered electron and the inelastically scattered electron.

Abstract: Method and apparatus for analysis and display of fine grained mineral samples. A portion of the sample is illuminated with a charged particle beam. Emitted radiation is detected, and a sample emission spectrum is generated and fit with a plurality of standard emission spectra of minerals in a candidate mineral composition. A mineral composition whose emission spectrum best fits the sample emission spectrum is selected from a plurality of candidate mineral compositions. An assigned color is received for each mineral in the selected mineral composition, and the assigned colors are blended according to the proportion of each mineral in the selected mineral composition. An image pixel corresponding to the portion of the sample is rendered for display.

Abstract: Provided are a pattern measuring apparatus and a computer program which determine whether a gap formed in a sample (201) is a core gap (211) or a spacer gap (212). The secondary electron profile of the sample (201) is acquired, the feature quantities of the secondary electron profile at the positions of edges (303, 305) are detected, and based on the detected feature quantities, whether each gap adjacent to each of the edges (303, 305) is the core gap (211) or the spacer gap (212) is determined. Furthermore, the waveform profile of the spacer (207) is previously stored, the secondary electron profile of the sample (201) is acquired, a matching degree of the secondary electron profile and the stored waveform profile at the position of each spacer (207) is detected, and based on the detected matching degree, whether the each gap adjacent to each spacer (207) is the core gap (211) or the spacer gap (212) is determined.

Abstract: An inspection system includes: an automated optical inspection device detecting a defect of an inspection object by using a light; a scanning electron microscope device for inspecting the defect of the inspection object by using an electron beam and including a vacuum chamber; a stage positioned below and spaced from the scanning electron microscope device and supporting the inspection object; and a transferring device connected to the scanning electron microscope chamber and the automated optical inspection and transferring the scanning electron microscope device and the automated optical inspection device to positions over the stage. Air is in a gap between the chamber and the inspection object. Accordingly, an inspection object of a large size may be inspected for analysis without damage to the inspection object.

Abstract: When a time-of-flight mass selector having a chopper using a deflector selects the masses of the ions, an ion beam is deflected. As a result, at least a part of the ion beams diagonally pass through an aperture electrode with respect to the axis. Accordingly, there has been a problem that a position on an object irradiated with a cluster ion beam, results in moving. This mass selector includes: a flight tube having an equipotential space that makes a charged substance fly therein; a deflector that is installed in a downstream side with respect to the flight tube in a direction in which the charged substance flies; a first aperture electrode that is installed in a downstream side with respect to the deflector in a direction in which the charged substance flies; and a second aperture electrode that is installed in between the deflector and the first aperture electrode.

Abstract: There is a limit in range and distance in which an electron beam can interfere and electron interference is implemented within a range of a coherence length. Therefore, interference images are consecutively recorded for each interference region width from an interference image of a reference wave and an observation region adjacent to the reference wave by considering that a phase distribution regenerated and observed by an interference microscopy is a differential between phase distributions of two waves used for interference and a differential image between phase distributions of a predetermined observation region and a predetermined reference wave is acquired by acquiring integrating phase distributions acquired by individually regenerating the interference images. This work enables a wide range of interference image which is more than a coherence length by arranging phase distribution images performed and acquired in the respective phase distributions in a predetermined order.

Abstract: A method for examining a sample with a scanning charged particle beam imaging apparatus. First, an image area and a scan area are specified on a surface of the sample. Herein, the image area is entirely overlapped within the scan area. Next, the scan area is scanned by using a charged particle beam along a direction neither parallel nor perpendicular to an orientation of the scan area. It is possible that only a portion of the scan area overlapped with the image area is exposed to the charged particle beam. It also is possible that both the shape and the size of the image area are essentially similar with that of the scan area, such that the size of the area projected by the charged particle beam is almost equal to the size of the image area.