Inorganic Crystalline Solid Patents (Class 252/584)
  • Patent number: 11220463
    Abstract: A red zirconium-oxide sintered body includes oxide of cerium, auxiliary metal oxide and oxide of zirconium, wherein the auxiliary metal oxide includes any one or a combination of at least two of oxide of yttrium, oxide of magnesium, oxide of calcium and oxide of ytterbium; the red zirconium-oxide sintered body satisfies conditions that the oxide of cerium has a content of 0.2˜1.5 mol %; the oxide of cerium comprises trivalent cerium oxide; a sum of contents of the oxide of cerium and the auxiliary metal oxide is 1.1˜2.5 mol %; and the sintered body has fracture toughness?8 MPa·m1/2. The zirconium-oxide sintered body has red appearance and toughness more than 8 MPa·m1/2, and can be used for products such as mobile phone backboards, ornaments and dial plates.
    Type: Grant
    Filed: June 13, 2019
    Date of Patent: January 11, 2022
    Assignee: Shandong Sinocera Functional Material Co., Ltd.
    Inventors: Xibin Song, Bing Zhang, Xi Zhang
  • Patent number: 11014854
    Abstract: A ceramic lithium indium diselenide or like radiation detector device formed as a pressed material that exhibits scintillation properties substantially identical to a corresponding single crystal growth radiation detector device, exhibiting the intrinsic property of the chemical compound, with an acceptable decrease in light output, but at a markedly lower cost due to the time savings associated with pressing versus single crystal growth.
    Type: Grant
    Filed: August 6, 2018
    Date of Patent: May 25, 2021
    Assignee: Consolidated Nuclear Security, LLC
    Inventors: Jeffrey R. Preston, Ashley C. Stowe
  • Patent number: 10995400
    Abstract: Techniques are provided for making a coated article including an antibacterial and/or antifungal coating. In certain example embodiments, the method includes providing a first sputtering target including Zr; providing a second sputtering target including Zn; and co-sputtering from at least the first and second sputtering targets in the presence of nitrogen to form a layer including ZnxZryNz on a glass substrate. These layers may be heat-treated or thermally tempered to form a single layer including ZnxZryOz. In other examples, two discrete layers of Zn and Zr may be formed. The coating may be heated or tempered to form a single layer including ZnxZryOz. Coated articles made using these methods may have antibacterial and/or antifungal properties.
    Type: Grant
    Filed: October 12, 2011
    Date of Patent: May 4, 2021
    Assignee: Guardian Glass, LLC
    Inventors: Rudolph Hugo Petrmichl, Jiangping Wang, Jason Barber
  • Patent number: 10962686
    Abstract: The present invention relates to an antireflection film being capable of realizing high scratch resistance and antifouling property while simultaneously having low reflectivity and high light transmittance, and further being capable of enhancing screen sharpness of a display device.
    Type: Grant
    Filed: September 27, 2017
    Date of Patent: March 30, 2021
    Assignee: LG CHEM, LTD.
    Inventors: Jin Seok Byun, Jae Young Kim, In Young Song, Yeong Rae Chang, Yun U Shin
  • Patent number: 10533132
    Abstract: Embodiments of the invention include a semiconductor light emitting device with a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer emits first light. The device further includes AE1-xLi2Be4O6:Eux, wherein AE=one or more of Sr, Ba, Ca, disposed in the path of the first light. The AE1-xLi2Be4O6:Eux absorbs first light and emits second light. In some embodiments, the first light and second light may be blue.
    Type: Grant
    Filed: March 21, 2019
    Date of Patent: January 14, 2020
    Assignees: Lumileds Holding B.V., Ludwig-Maximillians-Universitaet Muenchen
    Inventors: Philipp-Jean Strobel, Peter Josef Schmidt, Wolfgang Schnick
  • Patent number: 10472287
    Abstract: A method of manufacturing a sulfide-based ceramic element, such as a transparent infrared optical element, comprises the steps of: synthesizing a sulfide powder; and sintering the powder to form the ceramic element; wherein the step of synthesizing the sulfide powder is performed by combustion in an aqueous solution, the solution comprising water as its only solvent, or containing water as its main solvent and at most 10%, and preferably at most 1% of the overall solvent mass, of one or more combustible solvents. The sulfide powder may be chosen, in particular, among ZnS, BaLa2S4, CaLa2S4.
    Type: Grant
    Filed: July 8, 2015
    Date of Patent: November 12, 2019
    Assignees: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, UNIVERSITE DE RENNES 1
    Inventors: Noha Hakmeh, Odile Merdrignac-Conanec, Xiang-Hua Zhang
  • Patent number: 10133148
    Abstract: Disclosed is a nonlinear optical material (NLO) for use in deep-UV applications, and methods of fabrication thereof. The NLO is fabricated from a plurality of components according to the formula AqByCz and a crystallographic non-centrosymmetric (NCS) structure. The NLO material may be fabricated as a polycrystalline or a single crystal material. In an embodiment, the material may be according to a formula Ba3ZnB5PO14.
    Type: Grant
    Filed: April 13, 2016
    Date of Patent: November 20, 2018
    Assignee: UNIVERSITY OF HOUSTON SYSTEM
    Inventors: P. Shiv Halasyamani, Hongwei Yu
  • Patent number: 10114160
    Abstract: A polarizing plate has at least a polarizer layer including a polyvinyl alcohol film dyed with iodine and includes a compound exhibiting a polyiodide ion I5? forming ability in an iodide compound-containing solution.
    Type: Grant
    Filed: August 2, 2016
    Date of Patent: October 30, 2018
    Assignee: FUJIFILM Corporation
    Inventors: Mayumi Nojiri, Yu Naito, Nobutaka Fukagawa, Naoya Shimoju, Hiroyuki Ishikawa
  • Patent number: 9986663
    Abstract: High thermal conductivity materials and methods of their use for thermal management applications are provided. In some embodiments, a device comprises a heat generating unit (304) and a thermally conductive unit (306, 308, 310) in thermal communication with the heat generating unit (304) for conducting heat generated by the heat generating unit (304) away from the heat generating unit (304), the thermally conductive unit (306, 308, 310) comprising a thermally conductive compound, alloy or composite thereof. The thermally conductive compound may include Boron Arsenide, Boron Antimonide, Germanium Carbide and Beryllium Selenide.
    Type: Grant
    Filed: January 29, 2014
    Date of Patent: May 29, 2018
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: David A. Broido, Thomas L. Reinecke, Lucas R. Lindsay
  • Patent number: 9910299
    Abstract: The present invention is a crystal body configured with a crystal and having a pair of light passing surfaces which face each other and pass light and at least one side surface which connects the pair of the light passing surfaces. In the crystal body according to the present invention, a ratio B/A of a dislocation density A (number/cm2) in the light passing surfaces and a dislocation density B (number/cm2) in the side surface satisfies the following general formula.
    Type: Grant
    Filed: October 23, 2014
    Date of Patent: March 6, 2018
    Assignee: FUJIKURA, LTD.
    Inventor: Takeshi Kizaki
  • Patent number: 9758726
    Abstract: Provided are a liquid crystal cell and a use thereof. An exemplary liquid crystal cell can be implemented in a bistable mode switching between a haze mode and a non-haze mode even with low driving voltage. Such a liquid crystal cell can be applied to various optical modulation apparatus, such as a smart window, a window protection film, a flexible display element, an active retarder for a 3D visual display, and a viewing angle-controlling film.
    Type: Grant
    Filed: July 11, 2014
    Date of Patent: September 12, 2017
    Assignee: LG CHEM, LTD.
    Inventors: Eun Jung Lim, Jung Woon Kim, Dong Hyun Oh
  • Patent number: 9553419
    Abstract: The present invention provides improved laser beam quality with fewer parts than the current method demands and decreasing the transmit aperture, said apparatus comprising: two or more independently pumped gain modules, two or more pump diodes, a polarizing waveplate, non-linear optical crystals, and a passive Q-switch.
    Type: Grant
    Filed: August 17, 2015
    Date of Patent: January 24, 2017
    Assignee: BAE Systems Information and Electronic Systems Integration Inc.
    Inventor: John C McCarthy
  • Patent number: 9030739
    Abstract: The present invention provides a garnet single crystal comprising a terbium aluminum garnet single crystal, wherein a portion of the aluminum is substituted with scandium, and a portion of at least one of the aluminum and terbium is substituted with at least one type selected from the group consisting of thulium, ytterbium and yttrium.
    Type: Grant
    Filed: October 18, 2012
    Date of Patent: May 12, 2015
    Assignees: Fujikura Ltd., National Institute for Materials Science
    Inventors: Tsubasa Hatanaka, Akiharu Funaki, Kiyoshi Shimamura, Villora Encarnacion Antonia Garcia
  • Publication number: 20150113901
    Abstract: An uncolored roofing granule including a low solar absorption base and a low solar absorption and solar opaque coating presented on the base, the coating including a binder, a pigment, wherein the binder includes a curable component and a non-clay, thermally reactive curing agent.
    Type: Application
    Filed: April 8, 2013
    Publication date: April 30, 2015
    Applicant: 3M Innovative Properties Company
    Inventors: Feng Bai, Kenton D. Budd, Rebecca L. Everman, Craig W. Lindsay
  • Patent number: 9011727
    Abstract: Blending an electrically active, anodically coloring, electrochromic polymer with a non-electrochromic, non-electrically conductive binder polymer greatly enhances the performance of the anodically coloring, electrochromic polymer in an electrochromic device over time. In addition to improved physical characteristics of the blend, e.g., film build, durability etc, the coloristic properties, including color space and color strength, of the device comprising the blend are more durable than when using the neat polymer, and in certain instances, the color space and color intensity provided by the blend is superior to that available from the neat polymer.
    Type: Grant
    Filed: April 7, 2009
    Date of Patent: April 21, 2015
    Assignee: BASF SE
    Inventors: Nancy Cliff, David Yale, Deanna Rodovsky, Jennifer Jankauskas
  • Patent number: 8999060
    Abstract: Millimeter-scale GaN single crystals in filamentary form, also known as GaN whiskers, grown from solution and a process for preparing the same at moderate temperatures and near atmospheric pressures are provided. GaN whiskers can be grown from a GaN source in a reaction vessel subjected to a temperature gradient at nitrogen pressure. The GaN source can be formed in situ as part of an exchange reaction or can be preexisting GaN material. The GaN source is dissolved in a solvent and precipitates out of the solution as millimeter-scale single crystal filaments as a result of the applied temperature gradient.
    Type: Grant
    Filed: March 12, 2013
    Date of Patent: April 7, 2015
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Boris N. Feigelson, Jennifer K. Hite, Francis J. Kub, Charles R. Eddy, Jr.
  • Patent number: 8728236
    Abstract: Large area single crystal III-V nitride material having an area of at least 2 cm2, having a uniformly low dislocation density not exceeding 3×106 dislocations per cm2 of growth surface area, and including a plurality of distinct regions having elevated impurity concentration, wherein each distinct region has at least one dimension greater than 50 microns, is disclosed. Such material can be formed on a substrate by a process including (i) a first phase of growing the III-V nitride material on the substrate under pitted growth conditions, e.g., forming pits over at least 50% of the growth surface of the III-V nitride material, wherein the pit density on the growth surface is at least 102 pits/cm2 of the growth surface, and (ii) a second phase of growing the III-V nitride material under pit-filling conditions.
    Type: Grant
    Filed: January 17, 2011
    Date of Patent: May 20, 2014
    Assignee: Cree, Inc.
    Inventors: Xueping Xu, Robert P. Vaudo
  • Patent number: 8685161
    Abstract: Various single crystals are disclosed including sapphire. The single crystals have desirable geometric properties, including a width not less than about 15 cm and the thickness is not less than about 0.5 cm. The single crystal may also have other features, such as a maximum thickness variation, and as-formed crystals may have a generally symmetrical neck portion, particularly related to the transition from the neck to the main body of the crystal. Methods and for forming such crystals and an apparatus for carrying out the methods are disclosed as well.
    Type: Grant
    Filed: February 14, 2012
    Date of Patent: April 1, 2014
    Assignee: Saint-Gobain Ceramics & Plastics, Inc.
    Inventors: John W. Locher, Steven A. Zanella, Ralph L. MacLean, Jr., Herbert Ellsworth Bates
  • Patent number: 8679248
    Abstract: Millimeter-scale GaN single crystals in filamentary form, also known as GaN whiskers, grown from solution and a process for preparing the same at moderate temperatures and near atmospheric pressures are provided. GaN whiskers can be grown from a GaN source in a reaction vessel subjected to a temperature gradient at nitrogen pressure. The GaN source can be formed in situ as part of an exchange reaction or can be preexisting GaN material. The GaN source is dissolved in a solvent and precipitates out of the solution as millimeter-scale single crystal filaments as a result of the applied temperature gradient.
    Type: Grant
    Filed: November 23, 2010
    Date of Patent: March 25, 2014
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Boris N. Feigelson, Jennifer K. Hite, Francis J. Kub, Charles R. Eddy, Jr.
  • Patent number: 8663389
    Abstract: A method and apparatus for depositing III-V material is provided. The apparatus includes a reactor partially enclosed by a selectively permeable membrane 12. A means is provided for generating source vapors, such as a vapor-phase halide of a group III element (IUPAC group 13) within the reactor volume 10, and an additional means is also provided for introducing a vapor-phase hydride of a group V element (IUPAC group 15) into the volume 10. The reaction of the group III halide and the group V hydride on a temperature-controlled substrate 18 within the reactor volume 10 produces crystalline III-V material and hydrogen gas. The hydrogen is preferentially removed from the reactor through the selectively permeable membrane 12, thus avoiding pressure buildup and reaction imbalance. Other gases within the reactor are unable to pass through the selectively permeable membrane.
    Type: Grant
    Filed: May 21, 2011
    Date of Patent: March 4, 2014
    Inventor: Andrew Peter Clarke
  • Patent number: 8613802
    Abstract: Affords nitride semiconductor crystal manufacturing apparatuses that are durable and that are for manufacturing nitride semiconductor crystal in which the immixing of impurities from outside the crucible is kept under control, and makes methods for manufacturing such nitride semiconductor crystal, and the nitride semiconductor crystal itself, available. A nitride semiconductor crystal manufacturing apparatus (100) is furnished with a crucible (101), a heating unit (125), and a covering component (110). The crucible (101) is where, interiorly, source material (17) is disposed. The heating unit (125) is disposed about the outer periphery of the crucible (101), where it heats the crucible (101) interior. The covering component (110) is arranged in between the crucible (101) and the heating unit (125).
    Type: Grant
    Filed: January 20, 2010
    Date of Patent: December 24, 2013
    Assignee: Sumitomo Electric Industies, Ltd.
    Inventors: Issei Satoh, Michimasa Miyanaga, Yoshiyuki Yamamoto, Hideaki Nakahata
  • Patent number: 8597544
    Abstract: A compound for non-linear optics for use at 350 nm and below. The compound includes a material for non-linear optics comprising AxM(1-x)Al3B4O12. x is larger than or equal to zero and smaller than or equal to 0.1, A is selected from a group consisting of Sc, Y, La, Yb, and Lu, and M is selected from a group consisting of Sc, Y, La, Yb, and Lu. The compound is free from a molybdenum bearing impurity of at least 1000 parts per million.
    Type: Grant
    Filed: August 27, 2012
    Date of Patent: December 3, 2013
    Assignee: Deep Photonics Corporation
    Inventor: Theodore Alekel
  • Publication number: 20130314766
    Abstract: A nonlinear crystal includes a plurality of poled zones implemented in a nonlinear material. The crystal has a first region and a second region. In the first region, the local average of a length of a period of the poled zones substantially increases with increasing distance from an origin. In the second region, the local average of the length of the period of the poled zones substantially decreases with increasing distance from the origin. The origin is located at an end of the crystal.
    Type: Application
    Filed: December 1, 2011
    Publication date: November 28, 2013
    Applicant: EpiCrystals Oy
    Inventors: Tuomas Vallius, Janne Konttinen, Pietari Tuomisto
  • Patent number: 8591652
    Abstract: The invention relates to a free-standing semiconductor substrate as well as a process and a mask layer for the manufacture of a free-standing semiconductor substrate, wherein the material for forming the mask layer consists at least partially of tungsten silicide nitride or tungsten silicide and wherein the semiconductor substrate self-separates from the starting substrate without further process steps.
    Type: Grant
    Filed: August 24, 2006
    Date of Patent: November 26, 2013
    Assignee: Freiberger Compound Materials GmbH
    Inventors: Christian Hennig, Markus Weyers, Eberhard Richter, Guenther Traenkle
  • Patent number: 8588261
    Abstract: A composition of matter is provided having the general chemical formula K(H,D)2P(16Ox,18Oy)4, where x<0.998 or y>0.002, and x+y?1. Additionally, a method of fabricating an optical material by growth from solution is provided. The method includes providing a solution including a predetermined percentage of (H,D)216O and a predetermined percentage of (H,D)218O, providing a seed crystal, and supporting the seed crystal on a platform. The method also includes immersing the seed crystal in the solution and forming the optical material. The optical material has the general chemical formula K(H,D)2P(16Ox,18Oy)4, where x<0.998 or y>0.002, and x+y?1.
    Type: Grant
    Filed: March 15, 2011
    Date of Patent: November 19, 2013
    Inventors: John A. Caird, Andrew J. Bayramian, Christopher A. Ebbers
  • Publication number: 20130260085
    Abstract: A wavelength converting member is prepared by coating the surface of a polycrystalline transparent ceramic substrate with an activator and firing the activator-coated ceramic substrate for letting the activator diffuse into the ceramic substrate from its surface.
    Type: Application
    Filed: March 22, 2013
    Publication date: October 3, 2013
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Toshihiro Tsumori, Kazuhiro Wataya
  • Patent number: 8470724
    Abstract: Upon producing a transparent polycrystalline material, a suspension liquid (or slurry 1) is prepared, the suspension liquid being made by dispersing a raw-material powder in a solution, the raw-material powder including optically anisotropic single-crystalline particles to which a rare-earth element is added. A formed body is obtained from the suspension liquid by means of carrying out slip casting in a space with a magnetic field applied. On this occasion, while doing a temperature control so that the single-crystalline particles demonstrate predetermined magnetic anisotropy, one of static magnetic fields and rotary magnetic fields is selected in compliance with a direction of an axis of easy magnetization in the single-crystalline particles, and is then applied to them. A transparent polycrystalline material is obtained by sintering the formed body, the transparent polycrystalline material having a polycrystalline structure whose crystal orientation is controlled.
    Type: Grant
    Filed: December 25, 2009
    Date of Patent: June 25, 2013
    Assignees: Inter-University Research Institute Corporation, National Institutes of Natural Sciences, Genesis Research Institute, Incorporated
    Inventors: Takunori Taira, Jun Akiyama, Shigeo Asai, Kunihiko Hara
  • Patent number: 8449672
    Abstract: This disclosure pertains to a process for making single crystal Group III nitride, particularly gallium nitride, at low pressure and temperature, in the region of the phase diagram of Group III nitride where Group III nitride is thermodynamically stable comprises a charge in the reaction vessel of (a) Group III nitride material as a source, (b) a barrier of solvent interposed between said source of Group III nitride and the deposition site, the solvent being prepared from the lithium nitride (Li3N) combined with barium fluoride (BaF2), or lithium nitride combined with barium fluoride and lithium fluoride (LiF) composition, heating the solvent to render it molten, dissolution of the source of GaN material in the molten solvent and following precipitation of GaN single crystals either self seeded or on the seed, maintaining conditions and then precipitating out.
    Type: Grant
    Filed: April 25, 2008
    Date of Patent: May 28, 2013
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Boris N. Feigelson, Richard L. Henry
  • Patent number: 8409475
    Abstract: A semiconductor nanocrystal composite comprising a semiconductor nanocrystal composition dispersed in an inorganic matrix material and a method of making same are provided. The method includes providing a semiconductor nanocrystal composition having a semiconductor nanocrystal core, providing a surfactant formed on the outer surface of the composition, and replacing the surfactant with an inorganic matrix material. The semiconductor nanocrystal composite emits light having wavelengths between about 1 and about 10 microns.
    Type: Grant
    Filed: September 4, 2007
    Date of Patent: April 2, 2013
    Assignee: Evident Technologies, Inc.
    Inventors: Michael LoCasio, Jennifer Gillies, Margaret Hines
  • Publication number: 20130050809
    Abstract: A method of preparing high refractive index nanoparticles includes adding a polymer stabilizer to a solvent, and forming high refractive index nanoparticles by adding high refractive index nanoparticle materials to the solvent and stirring the same. The high refractive index nanoparticle materials may have a refractive index equal to or greater than 1.8, and sizes of the high refractive index nanoparticles may be determined by adjusting a content of the polymer stabilizer to control an amount of the polymer stabilizer adsorbed to surfaces of the high refractive index nanoparticles.
    Type: Application
    Filed: May 22, 2012
    Publication date: February 28, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Moon Gyu Han, HongShik Shim, Chang Gyun Shin, Seog-jin Jeon
  • Publication number: 20130044779
    Abstract: A lasing medium having a tailored dopant concentration and a method of fabrication thereof is disclosed. The lasing medium has a single crystal having a continuous body having a selected length, wherein the crystal comprises dopant distributed along the length of the body to define a dopant concentration profile. In one embodiment, the dopant concentration profile results in a uniform heating profile. A method of fabricating a laser crystal having a tailored dopant concentration profile includes arranging a plurality of polycrystalline segments together to form an ingot, the polycrystalline segments each having dopant distributed, providing a crystal seed at a first end of the ingot, and moving a heating element along the ingot starting from the first end to a second end of the ingot, the moving heating element creating a moving molten region within the ingot while passing therealong.
    Type: Application
    Filed: August 16, 2011
    Publication date: February 21, 2013
    Applicant: RAYTHEON COMPANY
    Inventor: Robert W. BYREN
  • Publication number: 20130037763
    Abstract: An object of the present invention is to provide a colored translucent zirconia sintered body having red color and high translucency. The present invention relates to a zirconia sintered body, characterized by containing 6 to 30 mo % of yttria and 0.1 to 5 mol % of cerium oxide in terms of CeO2, the cerium oxide containing an oxide of trivalent cerium. The zirconia sintered body of the present invention has, in addition of high hardness, diamond luster based on high refractive index inherent in zirconia, deep red color and transparency.
    Type: Application
    Filed: March 4, 2011
    Publication date: February 14, 2013
    Applicant: TOSOH CORPORATION
    Inventor: Koji Tsukuma
  • Publication number: 20120236882
    Abstract: A composition of matter is provided having the general chemical formula K(H,D)2P(16Ox,18Oy)4, where x<0.998 or y>0.002, and x+y?1. Additionally, a method of fabricating an optical material by growth from solution is provided. The method includes providing a solution including a predetermined percentage of (H,D)216O and a predetermined percentage of (H,D)218O, providing a seed crystal, and supporting the seed crystal on a platform. The method also includes immersing the seed crystal in the solution and forming the optical material. The optical material has the general chemical formula K(H,D)2P(16Ox,18Oy)4, where x<0.998 or y>0.002, and x+y?1.
    Type: Application
    Filed: March 15, 2011
    Publication date: September 20, 2012
    Applicant: Lawrence Livermore National Security, LLC
    Inventors: John A. Caird, Andrew J. Bayramian, Christopher A. Ebbers
  • Publication number: 20120200920
    Abstract: The present invention provides a single crystal for an optical isolator having a Faraday rotation angle exceeding that of TGG single crystal in a wavelength region of 1064 nm or longer or in a wavelength region of shorter than 1064 nm, and is capable of realizing enlargement of crystal size, a production process thereof, an optical isolator, and an optical processor that uses the optical isolator. The single crystal according to the present invention is composed of a terbium aluminum garnet single crystal, and mainly a portion of the aluminum is replaced with lutetium.
    Type: Application
    Filed: April 20, 2012
    Publication date: August 9, 2012
    Applicants: NATIONAL INSTITUTE FOR MATERIALS SCIENCE, FUJIKURA LTD.
    Inventors: Kazuo SANADA, Kiyoshi SHIMAMURA, Villora Encarnacion Antonia GARCIA
  • Patent number: 8221657
    Abstract: The instant invention relates to novel phthalocyanines and their use as IR-absorbers, in particular in transparent thermoplastic or crosslinkable polymers. A further aspect of the invention is a composition of these phthalocyanines and thermoplastic or crosslinkable polymers and an architectural or automotive glazing containing these phthatolcyanines.
    Type: Grant
    Filed: June 3, 2011
    Date of Patent: July 17, 2012
    Assignee: BASF SE
    Inventors: Francesca Peri, Cesare Lorenzetti, Samanta Cimitan, Markus Grob
  • Patent number: 8189633
    Abstract: A polycrystalline transparent ceramic article including lutetium is presented. The article includes an oxide with a formula of ABO3, having type A lattice sites and type B lattice sites. The lattice site A may further comprise a plurality of elements, in addition to lutetium. Type B lattice site includes aluminum. An imaging device, a laser assembly, and a scintillator including the lutetium-based article is provided. A method of making the above article is also provided.
    Type: Grant
    Filed: January 21, 2010
    Date of Patent: May 29, 2012
    Assignee: General Electric Company
    Inventors: Kalaga Murali Krishna, Venkat Subramaniam Venkataramani, Mohan Manoharan
  • Publication number: 20120104336
    Abstract: In a titania-doped quartz glass member having a surface where EUV light of up to 70 nm wavelength is reflected, a refractive index distribution in the surface has only one extreme point within a central 80% region of the member. The titania-doped quartz glass member has a surface with a high level of precision and thus can be formed into an EUV lithography photomask substrate which is improved in flatness and thermal expansion properties.
    Type: Application
    Filed: January 9, 2012
    Publication date: May 3, 2012
    Inventors: Shigeru MAIDA, Hisatoshi Otsuka
  • Patent number: 8119185
    Abstract: The invention relates to a security material comprising a carrier and at least one photochromic Protein and/or a mutein of a photochromic protein. The security material is characterized in that it comprises at least one irreversible photosensitive layer on the carrier, and the at least one photochromic protein and/or mutein is contained at least in the at least one photosensitive layer and/or in an optional additional layer. The inventive security material is also characterized in that it is highly forgery-proof, the photochromic biomolecule cannot be removed therefrom in a usable form, and the photochromic biomolecule does not need to be supplied to a large group of clients.
    Type: Grant
    Filed: March 28, 2006
    Date of Patent: February 21, 2012
    Assignees: Philips-Universitaet Marburg, InovisCoat GmbH
    Inventors: Norbert Hampp, Martin Neebe, Arno Schmuck, Peter Roggendorf
  • Patent number: 8076846
    Abstract: An optical material is provided. The optical material includes a nanoparticle-resin composite material in which metal oxide nanoparticles are dispersed in a polymer, wherein the metal oxide nanoparticles are crystalline and have a particle diameter of 1×10?8 m or less, wherein surfaces of the metal oxide nanoparticles are coated with a surfactant, and wherein the metal oxide nanoparticles are crystallized at a temperature greater than or equal to 200° C. and less than or equal to 400° C. A light assembly including the nanoparticle-resin composite material is also provided.
    Type: Grant
    Filed: September 21, 2006
    Date of Patent: December 13, 2011
    Assignee: Sony Corporation
    Inventors: Mikihisa Mizuno, Yuichi Sasaki, Sung-Kil Lee, Hitoshi Katakura
  • Patent number: 8070959
    Abstract: Chalcogenide compounds with cation exchange capability and methods of using the compounds are described. Compounds of the general formula A2xMxSn3-xS6 are described wherein x is 0.1-0.95, A is Li+, Na+, K+ or Rb+ and M is Mn2+, Mg2+, Zn2+, Fe2+, Co2+ or Ni2+. Compounds of the general formula H2xMxSn3-xS6 are also described wherein x is 0.1-0.95 and M=Mn2+, Mg2+, Zn2+, Fe2+, Co2+ or Ni2+. The compounds can be layered compounds. The compounds are capable of intercalation of Cs+, Sr2+, Hg2+, Pb2+, Cd2+, and/or Ag+ ions. A process involving contacting the compounds with a solution comprising one or more ions including Cs+, Sr2+, Hg2+, Pb2+, Cd2+, and/or Ag+ is also provided. The one or more ions can be removed from the solution by the compounds. A process comprising contacting compounds of the general formula A2xMxSn3-xS6 with a solution containing UO22+, Th4+ or Pu4+ ions is also described.
    Type: Grant
    Filed: October 7, 2008
    Date of Patent: December 6, 2011
    Assignee: Northwestern University
    Inventors: Mercouri Kanatzidis, Emmanouil Manos, Nan Ding
  • Patent number: 8038904
    Abstract: A compound for non-linear optics for use at 350 nm and below. The compound includes a material for non-linear optics comprising AxM(1-x)Al3B4O12. x is larger than or equal to zero and smaller than or equal to 0.1, A is selected from a group consisting of Sc, Y, La, Yb, and Lu, and M is selected from a group consisting of Sc, Y, La, Yb, and Lu. The compound is free from a molybdenum bearing impurity of at least 1000 parts per million.
    Type: Grant
    Filed: June 15, 2007
    Date of Patent: October 18, 2011
    Assignee: Deep Photonics Corporation
    Inventor: Theodore Alekel
  • Patent number: 7985476
    Abstract: The present invention provides a transparent inorganic oxide dispersion which makes it possible to improve the refractive index and mechanical characteristics and to maintain transparency by modifying the surface of inorganic oxide particles with a surface modifier having one or more reactive functional groups; and an inorganic oxide particle-containing resin composition in which the transparent inorganic oxide dispersion and a resin are compositely integrated by the polymerization reaction, a composition for sealing a light emitting element, a light emitting element, and a method for producing an inorganic oxide particle-containing resin composition; and a hard coat film which has high transparency and makes it possible to improve a refractive index and tenacity, an optical functional film, an optical lens and an optical component.
    Type: Grant
    Filed: October 24, 2006
    Date of Patent: July 26, 2011
    Assignee: Sumitomo Osaka Cement Co., Ltd.
    Inventors: Yasuyuki Kurino, Toru Kinoshita, Naoki Takamiya, Yoshitaka Yamamoto, Tsuyoshi Kawase, Yoshizumi Ishikawa, Yoichi Sato, Ryosuke Nakamura, Yuko Katsube
  • Publication number: 20110170174
    Abstract: The present invention relates generally to the field of synthetic crystal, and more particularly, this invention relates to doped low-temperature phase barium metaborate single crystal, growth method and frequency-converter. Molten salt method was adopted. The single crystal completely overcome the shortcomings of BBO with strong deliquescence, almost no deliquescence; its frequency doubling effect and optical damage threshold has improved greatly compared with the BBO; its hardness increased significantly, the single crystal with Shore hardness of 101.3 and Mohs hardness of 6, however, BBO with Shore hardness of 71.2 and Mohs hardness of 4. From the UV-Vis region transmittance curves tests, the cut-off wavelength of the single crystal is 190 nm, wavelength of absorption onset is 205 nm. BBSAG is widely applied in the fields of laser and nonlinear optics, and in terms of frequency-converter of ultraviolet and deep-ultraviolet due to its excellent properties better than BBO.
    Type: Application
    Filed: October 8, 2008
    Publication date: July 14, 2011
    Applicant: FUJIAN INSTITUTE OF RESEARCH ON THE STRUCTURE OF MATTER, CHINESE ACADEMY OF SCIENCES
    Inventors: Changzhang Chen, Maochun Hong, Ding Li, Hainan Lin, Shicong Cai
  • Publication number: 20110062394
    Abstract: The present invention relates to the growth of single phase rare earth-doped sapphire (?-Al2O3) films on substrates by molecular beam epitaxy. The invention provides for composition of matters, neodymium-doped sapphire films, and methods for making and using thin films of this material. The rare earth-doped films of the present invention are especially useful in solid state lasers.
    Type: Application
    Filed: August 5, 2010
    Publication date: March 17, 2011
    Applicant: UNIVERSITY OF BRITISH COLUMBIA
    Inventors: Raveen Kumaran, Thomas Tiedje, Scott Webster, Shawn Penson
  • Publication number: 20110018421
    Abstract: The present invention provides a resin composition comprising the component (A) liquid-crystalline polyester, and the component (B) a titanium oxide filler having a volume average particle diameter of 0.27 to 0.4 ?m, wherein the component (B) is contained in an amount of from 5 to 110 parts by mass relative to 100 parts by mass of the component (A); a reflective plate of the resin composition, and a light-emitting device having the reflective plate. According to the resin composition of the present invention, it is possible to obtain a reflective plate exhibiting high reflectance of a visible light while keeping excellent mechanical strength of the liquid-crystalline polyester. Also, a light-emitting device excellent in characteristics such as brightness can be obtained using the reflective plate.
    Type: Application
    Filed: March 17, 2009
    Publication date: January 27, 2011
    Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED
    Inventors: Shintaro Saito, Sadanobu Iwase, Hiroshi Harada
  • Patent number: 7835070
    Abstract: An exposure apparatus includes an illumination optical system configured to illuminate a mask with a laser beam having a wavelength shorter than 250 nm, and a projection optical system configured to project and expose a pattern image of the mask onto an exposed substrate, in which an optical element made of a synthetic quartz member is disposed in the illumination optical system and/or the projection optical system. The synthetic quartz member satisfies the following conditions of initial transmittance relative to light having a wavelength of 150 nm being equal to or above 60% per centimeter, striae satisfying either grade 1 or grade 2 (Japan Optical Glass Industry Society Standard), an absorption coefficient ? at 3585 cm?1 equal to or below 0.035/cm, and the content of aluminum and lithium being equal to or below 1 and 0.5 ppm, respectively.
    Type: Grant
    Filed: December 30, 2005
    Date of Patent: November 16, 2010
    Assignee: Nikon Corporation
    Inventor: Masafumi Mizuguchi
  • Publication number: 20100181897
    Abstract: A light-converting ceramic composite comprising a solidified body having a texture of at least two or more oxide phases being continuously and three-dimensionally entangled together, with at least one of the oxide phases being a fluorescence-emitting crystal phase, wherein the interface length between the oxide phases per 1 mm2 of a plane in the light-converting ceramic composite is from 150 to 1,500 mm.
    Type: Application
    Filed: September 18, 2007
    Publication date: July 22, 2010
    Applicant: Ube Industries, Ltd. a corporation of Japan
    Inventors: Atsuyuki Mitani, Shin-ichi Sakata
  • Publication number: 20100157437
    Abstract: Embodiments of the invention described herein include metamaterials that exhibit negative permittivity and negative permeability at optical frequencies, methods for preparing such materials, and devices prepared from same.
    Type: Application
    Filed: November 25, 2009
    Publication date: June 24, 2010
    Applicant: TRITON SYSTEMS, INC.
    Inventors: Keith A. Higginson, Alkim Akyurtlu, Adil-Gerai Kussow
  • Patent number: 7740774
    Abstract: A resonant enhanced photosensitive material includes a trap center that is adapted to interact with light and enhances the photosensitivity of the material based on a resonant interaction process with photons. The invention provides enhanced photosensitivity materials and, especially a method for enhancing photosensitivity in glasses, glass ceramics and ceramics.
    Type: Grant
    Filed: July 24, 2007
    Date of Patent: June 22, 2010
    Assignee: Schott AG
    Inventors: Joseph S. Hayden, Bianca Schreder, Jose Zimmer
  • Patent number: 7736548
    Abstract: A non-linear optical device comprising a polymer configured to provide a grating holding ratio of 20% or higher after about four minutes, wherein the polymer comprises a first repeating unit comprising a first moiety having formula (M-1) and a second repeating unit comprising a second moiety having formula (M-2), as defined herein.
    Type: Grant
    Filed: July 23, 2007
    Date of Patent: June 15, 2010
    Assignee: Nitto Denko Corporation
    Inventors: Michiharu Yamamoto, Peng Wang