Abstract: The present invention relates to the use of printable inks for the formation of Al2O3 coatings or mixed Al2O3 hybrid layers, and to a corresponding process for the formation thereof.

Abstract: The present invention relates to an inorganic composition mainly containing a compound semiconductor, wherein the inorganic composition contains iridium element. The invention also relates to a method of producing an inorganic composite for producing an luminescent material, wherein the method comprises subjecting an inorganic composition mainly containing a compound semiconductor to an explosion by gunpowder and/or explosive in a sealed vessel. An inorganic composite for producing a luminescent material can be prepared by subjecting an inorganic composition to a doping treatment such as explosive treatment or heat-treatment. The inorganic composite can further be heat-treated to produce a luminescent material. The resulting luminescent material can be formed into a layer as a light emitter layer of an inorganic EL device.

Abstract: A semiconductive GaAs wafer has a diameter of 4 inches or more, and an in-wafer plane dislocation density of 30,000/cm2 or more and 100,000/cm2 or less. A semiconductive GaAs wafer is made by growing a GaAs single crystal under a temperature gradient of 20° C./cm or more and 150° C./cm or less formed in the crystal so that the semiconductive GaAs wafer has an in-wafer plane dislocation density of 30,000/cm2 or more and 100,000/cm2 or less.

Abstract: An optical dome or window formed of a composition which is transmissive to infrared frequencies in the range of from about 1 micron to about 14 microns and which is relatively opaque to substantially all frequencies above about 14 microns consisting essentially of a compound taken from the class consisting of group III-V compounds doped with an element taken from the class consisting of shallow donors and having less than about 1×107 atoms/cc impurities and having less than about 1×1015 parts carbon. The shallow donors are Se, Te and S, preferably Se, with the Se concentration from 5×1015 atoms/cc to 2×1016 atoms/cc. The group III-V compound is preferably GaAs or GaP.