Abstract: A thermoelectric material including a composition according to Chemical Formula 1: (Bia-xSb1-a-yMb)2-i(TecSe1-c)3-j??Chemical Formula 1 wherein M is an element of Group 13, 0?a?1, 0<b?0.004, 0?x?b, 0?y?b, x+y=b, 0?c?1, ?0.2?i?0.2, and ?0.2?j?0.2.

Abstract: A nanocomposite thermoelectric conversion material includes: crystal grains of a matrix phase material; and a grain boundary phase that is formed in an interface between the crystal grains and includes an insulating material. In the interface between the crystal grains of the matrix phase material, an element that forms the matrix phase material and an element that forms the insulating material are bonded by a chemical bond.

Abstract: A composite material comprises a filled skutterudite matrix of formula (I) IyCo4Sb12 in which (I) represents at least one of Yb, Eu, Ce, La, Nd, Ba and Sr, 0.05?y<1; and GaSb particles within the filled skutterudite matrix, wherein the composite material comprises 0.05-5 mol % GaSb particles. Compared with conventional materials, the composite material exhibits a substantially increased Seebeck coefficient, a slightly decreased overall thermal conductivity, and a substantially increased thermoelectric performance index across the whole temperature zone from the low temperature end to the high temperature end, as well as a greatly enhanced thermoelectric efficiency.

Abstract: Nanocomposite materials comprising a SiGe matrix with silicide and/or germanide nanoinclusions dispersed therein, said nanocomposite materials having improved thermoelectric energy conversion capacity.

Abstract: Provided is a method of manufacturing a Pb—Te based thermoelectric material, the method comprising: forming a Pb—Te based by mixture mixing element lead, element tellurium and a dopant; melting and then quenching the mixture; and obtaining a thermoelectric sintered body by hot-pressing a molded body obtained after the quenching.

Abstract: A nanocomposite thermoelectric conversion material composed of a Bi2(Te1-xSex)3 thermoelectric conversion material (where 0?x<1) as a matrix in which ceramic phonon scattering particles are dispersed. The nanocomposite thermoelectric conversion material produced by adjusting a first aqueous solution of a Bi complex to a higher pH value than an isoelectric point of phonon scattering particles, adding phonon scattering particles not modified on their surface to the pH adjusted first aqueous solution, and mixing the first aqueous solution to which phonon scattering particles have been added and a second aqueous solution including at least the former of Te anions and Se anions.

Abstract: The present invention demonstrates that weak scattering of carriers leads to a high mobility and therefore helps achieve low electric resistivity with high Seebeck coefficient for a thermoelectric material. The inventors demonstrate this effect by obtaining a thermoelectric figure of merit, zT, higher than 1.3 at high temperatures in n-type PbSe, because of the weak scattering of carriers in the conduction band as compared with that in the valence band. The invention further demonstrates favorable thermoelectric transport properties of n-type PbTe1-xIx with carrier concentrations ranging from 5.8×1018-1.4×1020 cm?3.

Abstract: A process for manufacturing a nanocomposite thermoelectric material having a plurality of nanoparticle inclusions. The process includes determining a material composition to be investigated for the nanocomposite thermoelectric material, the material composition including a conductive bulk material and a nanoparticle material. In addition, a range of surface roughness values for the insulating nanoparticle material that can be obtained using current state of the art manufacturing techniques is determined. Thereafter, a plurality of Seebeck coefficients, electrical resistivity values, thermal conductivity values and figure of merit values as a function of the range of nanoparticle material surface roughness values is calculated. Based on these calculated values, a nanocomposite thermoelectric material composition or ranges of compositions is/are selected and manufactured.

Abstract: The thermoelectric material according to the present invention is characterized in that carbon nanotubes are dispersed in thermoelectric matrix powder by mechanically grinding, mixing, and treating by heating a mixed powder formed through a chemical reaction after mixing a first solution in which carbon nanotubes are dispersed and a second solution containing metallic salts. Further, a method for fabricating the thermoelectric material includes fabricating the first solution and the second solution, mixing the first solution and the second solution with each other to form a mixed solution, forming and growing a mixed powder in which carbon nanotubes and metals are mixed by a chemical reaction of the mixed solution, mechanically grinding and mixing the mixed powder, and heating the ground-and-mixed mixed powder to form the thermoelectric material.

Abstract: A thermoelectric material that comprises a binary main group matrix material and nano-particles and/or nano-inclusions of metal oxide dispersed therein, and has electrical properties of ternary doped materials. A process for making the thermoelectric material that includes reacting a reduced metal precursor with an oxidized metal precursor in the presence of nanoparticles.

Abstract: A thermoelectric material that comprises a ternary main group matrix material and nano-particles and/or nano-inclusions of a Group 2 or Group 12 metal oxide dispersed therein. A process for making the thermoelectric material that includes reacting a reduced metal precursor with an oxidized metal precursor in the presence of nanoparticles.

Abstract: A bismuth-doped perovskite thermoelectric, comprising (Bix, La0.1-x)SrTiO3, wherein x is between 0.01 and 0.1, can have a high figure-of-merit, ZT.

Abstract: Doped and partially-reduced oxide (e.g., SrTiO3-based) thermoelectric materials. The thermoelectric materials can be single-doped or multi-doped (e.g., co-doped) and display a thermoelectric figure of merit (ZT) of 0.2 or higher at 1050K. Methods of forming the thermoelectric materials involve combining and reacting suitable raw materials and heating them in a graphite environment to at least partially reduce the resulting oxide. Optionally, a reducing agent such as lanthanum boride, titanium carbide, titanium nitride, or titanium boride can be incorporated into the starting materials prior to the reducing step in graphite. The reaction product can be sintered to form a dense thermoelectric material.

Abstract: The inventors demonstrate herein that various Zintl compounds can be useful as thermoelectric materials for a variety of applications. Specifically, the utility of Ca3AlSb3, Ca5Al2Sb6, Ca5In2Sb6, Ca5Ga2Sb6, is described herein. Carrier concentration control via doping has also been demonstrated, resulting in considerably improved thermoelectric performance in the various systems described herein.

Abstract: A thermoelectric material and a method of making a thermoelectric material are provided. In certain embodiments, the thermoelectric material comprises at least 10 volume percent porosity. In some embodiments, the thermoelectric material has a zT greater than about 1.2 at a temperature of about 375 K. In some embodiments, the thermoelectric material comprises a topological thermoelectric material. In some embodiments, the thermoelectric material comprises a general composition of (Bi1-xSbx)u(Te1-ySey)w, wherein 0?x?1, 0?y?1, 1.8?u?2.2, 2.8?w?3.2. In further embodiments, the thermoelectric material includes a compound having at least one group IV element and at least one group VI element. In certain embodiments, the method includes providing a powder comprising a thermoelectric composition, pressing the powder, and sintering the powder to form the thermoelectric material.

Abstract: An embodiment of the present disclosure provides a thermoelectric composite material including: a thermoelectric matrix including a thermoelectric material; and a plurality of nano-carbon material units located in the thermoelectric matrix and spaced apart from each other, wherein a spacing between two neighboring nano-carbon material unit is about 50 nm to 2 ?m.

Abstract: The invention provides a nanocomposite thermoelectric conversion material (1) in which the matrix has a polycrystalline structure, and crystal grains (10) and a crystal grain boundary phase (12) of a different composition are present therein, and in which the same type of phonon-scattering particles (14) are dispersed within the crystal grains (10) and the crystal grain boundary phase (12).

Abstract: Provided is a clathrate compound represented by a following chemical formula, for example, BaaGabAlcSid (where 7.77?a?8.16, 7.47?b?15.21, 0.28?c?6.92, 30.35?d?32.80, and a+b+c+d=54), and a thermoelectric material containing the clathrate compound. A producing method of the thermoelectric material is also provided.

Abstract: The method of manufacturing the thermoelectric material including a plurality of phases that are phase-separated from a supersaturated solid solution includes: a process of performing a mechanical alloying treatment to a starting raw material that is prepared with a composition deviated from a composition range existing in an equilibrium state of a compound to generate the supersaturated solid solution; and a process of performing phase separation into the plurality of phases and solidification by heating and pressing the supersaturated solid solution, or by further performing a heat treatment according to the circumstances.

Abstract: A nanocomposite thermoelectric conversion material (100) includes a crystalline matrix (102) made of a thermoelectric conversion material; and phonon-scattering particles (108) dispersed in the crystalline matrix (102). Each phonon-scattering particle (108) includes at least one amorphous nanoparticle (106) coated with a crystalline film (104) having a nano-order thickness, and the crystalline structure of the crystalline film (104) is different from the crystalline structure of the thermoelectric conversion material.

Abstract: A thermoelectric material that comprises a ternary main group matrix material and nano-particles and/or nano-inclusions of transition metal oxide dispersed therein. A process for making the thermoelectric material that includes reacting a reduced metal precursor with an oxidized metal precursor in the presence of transition metal oxide nanoparticles.

Abstract: Doped and partially-reduced oxide (e.g., SrTiO3-based) thermoelectric materials. The thermoelectric materials can be single-doped or multi-doped (e.g., co-doped) and display a thermoelectric figure of merit (ZT) of 0.2 or higher at 1050K. Methods of forming the thermoelectric materials involve combining and reacting suitable raw materials and heating them in a graphite environment to at least partially reduce the resulting oxide. Optionally, a reducing agent such as titanium carbide can be incorporated into the starting materials prior to the reducing step in graphite. The reaction product can be sintered to form a dense thermoelectric material.

Abstract: The present invention provides a method of making a substantially phase pure compound including a cation and an anion. The compound is made by mixing in a ball-milling device a first amount of the anion with a first amount of the cation that is less than the stoichiometric amount of the cation, so that substantially all of the first amount of the cation is consumed. The compound is further made by mixing in a ball-milling device a second amount of the cation that is less than the stoichiometric amount of the cation with the mixture remaining in the device. The mixing is continued until substantially all of the second amount of the cation and any unreacted portion of anion X are consumed to afford the substantially phase pure compound.

Abstract: A thermoelectric material including: a thermoelectric matrix including grains with a composition of Formula 1: (BixSb1-x)a(TeySe1-y)b??Formula 1 wherein 1.8?a?2.2, 2.8?b?3.2, 0?x?1, and 0?y?1, and wherein a plurality of dislocations is present along a grain boundary between adjacent grains of the composition of Formula 1.

Abstract: A process for forming thermoelectric nanoparticles includes the steps of providing a reducing agent, and at least one first metal; mixing the reducing agent and at least one first metal forming a premixed reducing solution; providing a second metal containing compound, and a core material; mixing the second metal containing compound and the core material forming a premixed second metal reaction solution separate from the premixed reducing solution; and mixing and reacting the premixed second metal reaction solution with the premixed reducing solution. A spontaneous alloying occurs about the core material forming thermoelectric composite nanoparticles.

Abstract: A method of producing a nanocomposite thermoelectric conversion material which has a high thermoelectric conversion performance without modifying the surface of the phonon scattering particles and thereby preventing the conventional defects due to an organic phase derived from a modifier. The method produces a nanocomposite thermoelectric conversion material comprised of a Bi2(Te1-x,Sex)3 thermoelectric conversion material (where 0?x<1) as a matrix in which ceramic phonon scattering particles are dispersed, characterized by including a step of adjusting a first aqueous solution of a Bi complex to a higher pH value than an isoelectric point of phonon scattering particles, a step of adding phonon scattering particles not modified on their surface to the pH adjusted first aqueous solution, and a step of mixing the first aqueous solution to which phonon scattering particles have been added and a second aqueous solution including at least the former of Te anions and Se anions.

Abstract: A process for forming thermoelectric nanoparticles includes the steps of providing a core material and a bismuth containing compound in a reverse micelle; providing a tellurium containing compound either in or not in a reverse micelle; reacting the bismuth containing compound with the tellurium containing compound in the presence of a base, forming a composite thermoelectric nanoparticle having a core and shell structure.

Abstract: A thermoelectric material of the p-type having the stoichiometric formula Zn4Sb3, wherein part of the Zn atoms optionally being substituted by one or more elements selected from the group comprising Sn, Mg, Pb and the transition metals in a total amount of 20 mol % or less in relation to the Zn atoms is provided by a process involving zone-melting of a an arrangement comprising an interphase between a “stoichiometric” material having the desired composition and a “non-stoichiometric” material having a composition deviating from the desired composition. The thermoelectric materials obtained exhibit excellent figure of merits.

Abstract: A dichalcogenide thermoelectric material having a very low thermal conductivity in comparison with a conventional metal or semiconductor is described. The dichalcogenide thermoelectric material has a structure of Formula 1 below: RX2-aYa??Formula 1 wherein R is a rare earth or transition metal magnetic element, X and Y are each independently an element selected from the group consisting of S, Se, Te, P, As, Sb, Bi, C, Si, Ge, Sn, B, Al, Ga, In, and a combination thereof, and 0?a<2.

Abstract: A process for forming thermoelectric nanoparticles includes the steps of forming a core material reverse micelle or micelle, adding a bismuth containing compound to the core material reverse micelle or micelle forming a reverse micelle or micelle having the bismuth containing compound dispersed therein, adding a tellurium containing compound with the formed micelle or reverse micelle in the presence of a reducing agent that alloys with the bismuth containing compound forming composite thermoelectric nanoparticles having a core and shell structure, and washing the core and shell nanoparticles in a solvent mixture including ammonium hydroxide, water and methanol wherein the core and shell nanoparticles remain un-agglomerated and have a particle size of from 1-25 nanometers.

Abstract: The method of manufacturing the thermoelectric material including a plurality of phases that are phase-separated from a supersaturated solid solution includes: a process of performing a mechanical alloying treatment to a starting raw material that is prepared with a composition deviated from a composition range existing in an equilibrium state of a compound to generate the supersaturated solid solution; and a process of performing phase separation into the plurality of phases and solidification by heating and pressing the supersaturated solid solution, or by further performing a heat treatment according to the circumstances.

Abstract: Provided is a clathrate compound represented by a following chemical formula, for example, BaaGabAlcSid (where 7.77?a?8.16, 7.47?b?15.21, 0.28?c?6.92, 30.35?d?32.80, and a+b+c+d=54), and a thermoelectric material containing the clathrate compound. A producing method of the thermoelectric material is also provided.

Abstract: A highly efficient thermoelectric material with one end coated in silver adhesive and placed in a high temperature furnace to heat and diffuse the silver adhesive into the homogeneous thermoelectric material, thereby producing an non-uniform thermoelectric material one-side doped thermoelectric material. The non-uniform thermoelectric material one-side doped thermoelectric material is able to achieve a high thermoelectric figure of merit.

Abstract: A thermoelectric converter made of a thermoelectric conversion material is provided in which metal or alloy particles having an average particle size of 1 to 100 nm are dispersed, wherein at least a part of the metal or alloy particles are dispersed at a distance not more than the mean free path of the phonon of the thermoelectric conversion material.

Abstract: An multiple inorganic compound structure according to the present invention is a multiple inorganic compound structure including a main crystalline phase, which main crystalline phase contains a sub crystalline phase inside the main crystalline phase, the sub crystalline phase having a non-metallic element arrangement identical to that of the main crystalline phase. A metal element identical to at least one metallic element included in the sub crystalline phase is formed as a solid solution in the main crystalline phase, and its crystal orientation in a main crystalline phase part is identical to that of the sub crystalline phase.

Abstract: Thermoelectric eutectic and off-eutectic compositions comprising a minor phase in a thermoelectric matrix phase are provided. These compositions include eutectic and near eutectic compositions where the matrix phase is a chalcogenide (S, Se, Te) of Ge, Sn, or Pb or an appropriate alloy of these compounds and at least one of Ge, Ge1?xSix, Si, ZnTe, and Co are precipitated as the minor phase within the matrix. Methods of making and using the compositions are also provided. The thermoelectric and mechanical properties of the compositions make them well-suited for use in thermoelectric applications. Controlled doping of eutectic compositions and hypereutectic compositions can yield large power factors. By optimizing both the thermal conductivities and power factors of the present compositions, ZT values greater than 1 can be obtained at 700K.

Abstract: Thermoelectric conversion materials, expressed by the following formula: Bi1-xMxCuwOa-yQ1yTeb-zQ2z. Here, M is at least one element selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Eu, Sm, Mn, Ga, In, Ti, As and Sb; Q1 and Q2 are at least one element selected from the group consisting of S, Se, As and Sb; x, y, z, w, a, and b are 0?x<1, 0<w?1, 0.2<a<4, 0?y<4, 0.2<b<4 and 0?z<4. These thermoelectric conversion materials may be used for thermoelectric conversion elements, where they may replace thermoelectric conversion materials in common use, or be used along with thermoelectric conversion materials in common use.

Abstract: The present invention provides a method of making a substantially phase pure compound including a cation and an anion. The compound is made by mixing in a ball-milling device a first amount of the anion with a first amount of the cation that is less than the stoichiometric amount of the cation, so that substantially all of the first amount of the cation is consumed. The compound is further made by mixing in a ball-milling device a second amount of the cation that is less than the stoichiometric amount of the cation with the mixture remaining in the device. The mixing is continued until substantially all of the second amount of the cation and any unreacted portion of anion X are consumed to afford the substantially phase pure compound.

Abstract: A thermoelectric material of the p-type having the stoichiometric formula Zn4Sb3, wherein part of the Zn atoms optionally being substituted by one or more elements selected from the group comprising Sn, Mg, Pb and the transition metals in a total amount of 20 mol % or less in relation to the Zn atoms is provided by a process involving zone-melting of a an arrangement comprising an interphase between a “stoichiometric” material having the desired composition and a “non-stoichiometric” material having a composition deviating from the desired composition. The thermoelectric materials obtained exhibit excellent figure of merits.

Abstract: A process for producing bulk thermoelectric compositions containing nanoscale inclusions is described. The thermoelectric compositions have a higher figure of merit (ZT) than without the inclusions. The compositions are useful for power generation and in heat pumps for instance.

Abstract: Disclosed is a new thermoelectric conversion material represented by the chemical formula 1: Bi1?xCu1?yO1?zTe, where 0?x<1, 0?y<1, 0?z<1 and x+y+z>0. A thermoelectric conversion device using said thermoelectric conversion material has good energy conversion efficiency.

Abstract: Thermoelectric eutectic and off-eutectic compositions comprising a minor phase in a thermoelectric matrix phase are provided. These compositions include eutectic and near eutectic compositions where the matrix phase is a chalcogenide (S, Se, Te) of Ge, Sn, or Pb or an appropriate alloy of these compounds and at least one of Ge, Ge1-xSix, Si, ZnTe, and Co are precipitated as the minor phase within the matrix. Methods of making and using the compositions are also provided. The thermoelectric and mechanical properties of the compositions make them well-suited for use in thermoelectric applications. Controlled doping of eutectic compositions and hypereutectic compositions can yield large power factors. By optimizing both the thermal conductivities and power factors of the present compositions, ZT values greater than 1 can be obtained at 700K.

Abstract: A dichalcogenide thermoelectric material having a very low thermal conductivity in comparison with a conventional metal or semiconductor is described. The dichalcogenide thermoelectric material has a structure of Formula 1 below: RX2-aYa??Formula 1 wherein R is a rare earth or transition metal magnetic element, X and Y are each independently an element selected from the group consisting of S, Se, Te, P, As, Sb, Bi, C, Si, Ge, Sn, B, Al, Ga, In, and a combination thereof, and 0?a<2.

Abstract: Compounds are expressed by general formula of AxBC2−y where 0≦x≦2 and 0≦y<1, and have CdI2 analogous layer structures; A-site is occupied by at least one element selected from the group consisting of Li, Na, K, Rb, Cs, Mg, Ca, Sr, Ba, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Ir, Pt, Au, Sc, rare earth elements containing Y, B, Al, Ga, In, Tl, Sn, Pb and Bi; B-site is occupied by at least one element selected from the group consisting of Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W, Ir, and Sn; C-site is occupied by at least one element selected from the group consisting of S, Se and Te; the compounds exhibit large figure of merit so as to be preferable for thermoelectric generator/refrigerator.

Abstract: A structure for polymeric thermistor device and method of making the same are disclosed. The polymeric thermistor makes use of a polymeric composite filled with conductive filler and show resistance variations at different temperatures. A polymeric substrate filled with conductive filler is cross-linked so that the whole polymeric composite structure filled with conductive filler is able to memorize shape. Then, the cross-linked polymeric composite undergoes a simple-sheared process and turns into a polymeric composite with a strain more than 1%. Therefore, the micro-structure and electrical properties of the conductive filler are changed.

Abstract: A family of isostructural compounds have been prepared having the general formula AnPbmBinQ2n+m. These compounds possess a NaCl lattice type structure as well as low thermal conductivity and controlled electrical conductivity. Furthermore, the electrical properties can be controlled by varying the values for n and m. These isostructural compounds can be used for semiconductor applications such as detectors, lasers and photovoltaic cells. These compounds also have enhanced thermoelectric properties making them excellent semiconductor materials for fabrication of thermoelectric devices.

Abstract: A family of isostructural compounds have been prepared having the general formula AnPbmBinO2n+m. These compounds possess a NaCl lattice type structure as well as low thermal conductivity and controlled electrical conductivity. Furthermore, the electrical properties can be controlled by varying the values for n and m. These isostructural compounds can be used for semiconductor applications such as detectors, lasers and photovoltaic cells. These compounds also have enhanced thermoelectric properties making them excellent semiconductor materials for fabrication of thermoelectric devices.