Abstract: The present invention provides, for use in a semiconductor manufacturing process, a method (100) of preparing an ion-implantation source material. The method includes providing (110) a deliquescent ion implantation source material and mixing (110) the deliquescent ion implantation source material with an organic liquid to form a paste.

Abstract: The invention relates to novel boron, phosphorus or boron-aluminium dopant pastes for the production of p, p+ and n, n+ regions in monocrystalline and polycrystalline Si wafers, and of corresponding pastes for use as masking pastes in semiconductor fabrication, power electronics or in photovoltaic applications.

Abstract: Improved gap fill of narrow spaces is achieved by using a doped silicate glass having a dopant concentration in a bottom portion thereof which is greater than an amount which causes surface crystal growth and in an upper portion thereof having a lower dopant concentration such that the overall dopant concentration of the doped silicate glass is below that which causes surface crystal growth.

Abstract: The object of the present invention affords a method of feeding dopant and a dopant composition used therein for easily preparing single crystals having a desired doping concentration during semiconductor substrate fabrication.In accordance with the present invention, a water solution containing oxides of the dopant is first added to the liquid containing colloidal silica. The colloidal silica can adsorb the oxides of the dopant to form a dopant composition. Around rod-shaped polysilicon, that is polysilicon rod, the dopant composition is discontinuously coated on the periphery of the polysilicon rods spaced at constant intervals and then dried. When the polysilicon rods are melted in an apparatus for manufacturing single crystals by a heater, dopant is protected by the glassed silica without evaporation. Accordingly, the dopant can be provided at a predetermined concentration to sustain the grown single crystals having a doping concentration as required.

Abstract: The present invention relates to a solid low temperature phosphorus diffusion source that is an R.sub.2 O.sub.3 /P.sub.2 O.sub.5 compound in which the ratio of R.sub.2 O.sub.3 to P.sub.2 O.sub.5 is 1 to 5 and R is Nd, Eu, Pr, Sm, Ho, Tb, Er, Yb, Tm or Dy. The invention also relates to a method of making the diffusion source, a method of using the diffusion source to evolve P.sub.2 O.sub.5 to dope a silicon wafer, and the doped silicon wafer.

Abstract: The present invention relates to a solid high temperature phosphorus diffusion source that is an R.sub.2 O.sub.3 /P.sub.2 O.sub.5 compound in which the ratio of R.sub.2 O.sub.3 to P.sub.2 O.sub.5 is 1 to 3 and R is La, Y, Ce, Nd, Eu, Pt, Sm, Ho, Tb, Er, Yb, Tm or Dy. The invention also relates to a method of making the diffusion source, a method of using the diffusion source to evolve P.sub.2 O.sub.5 to dope a silicon wafer, and to the doped silicon wafer.

Abstract: Compounds of the formula (1) ##STR1## wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7 and R.sup.8 have the meanings given in the description, and the other radicals have the following meanings:X, Y and Z denote identical or different divalent radicals --O--, --S--, --N(R.sup.9)-- or --C(R.sup.10).dbd.C(R.sup.11)--, with the proviso that at least one of the radicals, X, Y and Z is not a radical of the formula --C(R.sup.10).dbd.C(R.sup.11)--, and whereinR.sup.9 is a hydrogen atom, a branched or unbranched C.sub.1 - to C.sub.8 -alkyl radical or an optionally substituted phenyl radical, andR.sup.10 and R.sup.11 are, in each case, identical or different radicals which have one of the meanings of R.sup.1,R.sup.7 and R.sup.8 denote identical or different radicals, that is to say hydrogen atoms or C.sub.1 - to C.sub.6 -alkyl or phenyl radicals, andn, m and o denote identical or different integers with a value of from 1 to 10.

Abstract: A diamond n-type semiconductor including a substrate and a phosphorus element-doped diamond thin film disposed on the substrate. The diamond thin film is deposited by vaporizing a solution comprising a liquid organic compound as the diamond material with diphosphorus pentoxide (P.sub.2 O.sub.5) dissolved therein, and subjecting the resultant gas to a hot filament CVD method.

Abstract: The dopant body of arsenic for doping of a semiconductor substrate, e.g., silicon wafer, is a sintered body of a powder mixture comprising silicon arsenide, silica and, optionally, arsenic oxide in a specified proportion. The dopant body can be easily prepared and has various advantages over conventional elementary arsenic powder or a shaped body of silicon arsenide alone in respect of the high mechanical strength of the dopant body and absence of the problem of environmental contamination.

Abstract: A doping composition and method for doping a silicon wafer with phosphorous in which the composition contains (A) a high purity Al.sub.2 O.sub.3 /P.sub.2 O.sub.5 compound having a mole ratio of P.sub.2 O.sub.5 /Al.sub.2 O.sub.3 of about 1/1 to 4/1: and (B) a vehicle for the Al.sub.2 O.sub.3 /P.sub.2 O.sub.5 compound for application as a paste to provide a thin layer on the silicon wafer which is fired to provide an easily-removed powdery layer on the wafer.

Abstract: Zinc is diffused into indium phosphide in the presence of cadmium to prevent degradation of the indium phosphide surface.

Abstract: New arsenate compounds, compositions and solid diffusion sources for the arsenic doping of semiconductors are disclosed which comprise substances composed of a sintered arsenate that decomposes upon heating at temperatures between 500.degree.-1400.degree. C. to release As.sub.2 O.sub.5, As.sub.2 O.sub.3 and/or elemental arsenic vapors for transport to semiconductor elements as a controlled dopant.

Abstract: Semiconductor dopant sources are prepared by mixing particles of elemental silicon and at least one dopant oxide and heating the mixture to a temperature sufficient to initiate a reduction reaction while excluding external oxygen sources from affecting the reaction. The reaction can be initiated in a furnace, provided the gaseous ambient is controlled, or can be initiated in air if the mixture is heated sufficiently rapidly, e.g. by heating with electromagnetic energy at microwave frequencies. The dopant source produced includes a fused, amorphous matrix of silicon-oxygen-dopant atoms containing inclusions of elemental dopant and, preferably, inclusions of elemental silicon. Embodiments of sources prepared from antimony trioxide slowly evolve antimony, have a long life and repeatedly and predictably dope silicon at commerically useful levels.

Abstract: A solid body formed by the chemical vapor-phase deposition of, for example, boron nitride is used as a solid dopant source for diffusion doping of semiconductor substrates in place of conventional sintered bodies of boron nitride. By virtue of the extremely low impurity content of the vapor-deposited dopant source in comparison with conventional sintered bodies, which unavoidably contain impurities originating in the powder of the dopant compound for sintering and the binder to facilitate sintering, the semiconductor substrate doped using the inventive dopant source has outstandingly low densities of lattice defects and dislocations in addition to the absence of troubles in the diffusion process due to melting of the binder contained in the sintered dopant sources.

Abstract: Planar diffusion sources are provided wherein the source is a wafer of inert material, preferably silicon or silicon dioxide and wherein the wafer acts as a substrate for a surface coating comprising a salt, preferably the oxide, of the dopant element. An inert oxide such as aluminum oxide or silicon dioxide may also be included in the coating. When applied to the substrate as a paste or slurry and fired to suitable temperatures, the dopant oxide coating tightly adheres to the substrate wafer. The coated diffusion source is placed alongside semi-conductor wafers in a diffusion furnace; where, at diffusion temperatures, the dopant element volatilizes and diffuses into the surface of the semi-conductor material. The diffusion source can be reused numerous times.

Abstract: A process is described for doping compound semiconductors using a metal fluoride (e.g., ZnF.sub.2) as the source of dopant. The anhydrous metal fluoride is put down on the surface of the compound semiconductor, capped with a suitable encapsulant and heat treated to promote the diffusion. The heat treatment can be carried out in air without danger of surface damage to the compound semiconductor. Also, the diffusion is better controlled as to depth of diffusion and boundary delineation.

Abstract: Semiconductor doping compositions comprising a suspension of (a) a dopant material, in the form of finely divided spherical particles of narrow size distribution from about 0.1 D to D, where D is the diameter of the largest particle and is no more than about (1.mu.) comprising a member selected from the group consisting of B.sub.x Si.sub.y, B.sub.x N.sub.y, P.sub.x Si.sub.y, P.sub.x N.sub.y, As.sub.x Si.sub.y and Sb.sub.x Si.sub.y wherein x and y vary from about 0.001 to about 99.999 mole percent, (b) an effective amount of a thermally degradable polymeric organic binder such as polymethyl methacrylate; and (c) an amount of an organic solvent, such a cyclohexanone, sufficient to dissolve said polymeric organic binder, such as polymethylmethacrylate, and to disperse said dopant material are disclosed.

Abstract: Photodiodes (10) are fabricated in a single step diffusion process which exploits the characteristic of certain acceptors to form an anomalous diffusion profile (VI) including shallow and deep fronts (VIa and b) joined by an upwardly concave segment (VIc). By performing this type of diffusion into a low-doped n.sup.- -type body (12) with a carrier concentration (VII) below that of the concave segment, a p.sup.+ --p.sup.- junction (15) is formed at the depth of the concave segment and a p.sup.- --n.sup.- junction (17) is formed at a greater depth. The zone (16) between the junctions is at least partially depleted and forms the active region of a p.sup.+ --p.sup.- --n.sup.- photodiode. Specifically described are InP:Cd photodiodes.

Abstract: A method of growing crystalline semiconductors such as GaAs is disclosed. The method involves epitaxial deposition from the vapor phase and provides dopant material such as sulphur in the form of a molecular beam. The molecular beam is developed by effusion from a knudsen cell. The difficulties previously encountered using sulphur as such a cell are counteracted by use of an electrochemical cell as the sulphur source. The technique allows complicated doping profiles to be produced.

Abstract: Disclosed are thermally crystallizable glass compositions, glass ceramics and dopant hosts made therefrom, wherein said dopant hosts in thin wafer form have improved resistance to warpage, said compositions containing SiO.sub.2, Al.sub.2 O.sub.3, MgO, BaO, and B.sub.2 O.sub.3.

Abstract: A process for the diffusion of aluminum into a semiconductor is disclosed. A piece of elemental aluminum used as a diffusion source is placed on a boat of a refractory metal and heated together with a semiconductor substrate in an evacuated sealed tube for diffusing aluminum into the semiconductor substrate. The semiconductor substrate having aluminum diffused therein is then subjected to heat treatment in an atmosphere of oxygen or nitrogen for a required length of time at a temperature higher than that used for the thermal diffusion. The above process provides the desired diffusion profile of aluminum, and a long lifetime of minority carriers in the substrate.

Abstract: The PN juncture in a silicon chip and an oxide coating on its surface are simultaneously formed from clear solution derived from titanium alkoxides, water, alcohol, a suitable acid, and a P or N dopant compound by partial hydrolysis and polymerization. The solution is applied to the surface of a silicon chip. The chip is then heated which converts the solution to a solid oxide coating which meets the antireflective optical film requirements and induces the migration of the dopants into the chip, forming a PN junction in the chip. The method also provides deep and uniform junction formation or diffusion without resulting in excessive carrier concentration.

Abstract: A composition is described which comprises amorphous phosphorus-nitrogen-oxygen material having excellent thermal stability and low reactivity to a wide variety of chemicals. The material is manufactured using a chemical vapor deposition process. The reaction chamber is maintained at a temperature between about 400.degree.-900.degree. C. with a suitable substrate placed therein. Reaction gases containing phosphorus-nitrogen-bearing compounds and a source of oxygen are passed through the chamber to deposit the phosphorus-nitrogen-oxygen film onto the substrate.

Abstract: A coating composition useful for forming a high concentration phosphoro-silica spin-on dopant is disclosed. The coating composition is formed by the steps of heating a solution of mono-aluminum phosphate, adding a methyl alcohol to the hot solution so as to decrease the viscosity to a predetermined level, permitting the now diluted mono-aluminum phosphate solution to cool and mixing the cooled solution with an alcoholic solution of tetraethylorthosilicate. The present invention is also directed to semiconductor devices coated with the coating composition described hereinabove.

Abstract: A p-type region is formed in a semiconductor body by diffusion of aluminum from an aluminum oxide source in an open tube process. Both ceramic aluminum oxide and sapphire sources are described and an inert atmosphere of argon and hydrogen provides stable results. An alternative embodiment provides both the deep diffusion characteristics of aluminum with the high surface concentration of boron by using a boron nitride wafer carrier.

Abstract: Disclosed are new polycrystalline ceramic bodies formed from melts containing as essential components P.sub.2 O.sub.5, Ta.sub.2 O.sub.3 and Al.sub.2 O.sub.3 and sometimes containing small amounts of SiO.sub.2. Also disclosed are such bodies in the form of planar dopant hosts for doping silicon or germanium with phosphorus. Methods of making both products are disclosed as well as how to use the dopant hosts in a doping process.

Abstract: Disclosed are B.sub.2 O.sub.3 -containing glass-ceramic bodies made by in situ thermal crystallization of glasses and useful as a host for diffusion doping of semiconductors by the vapor phase transport of B.sub.2 O.sub.3 to the semiconductor from the glass-ceramic which in mole percent consists essentially of SiO.sub.2 15-40, Al.sub.2 O.sub.3 15-30, B.sub.2 O.sub.3 20-60, RO 5-25, La.sub.2 O.sub.3 0-5, Nb.sub.2 O.sub.5 0-5 and Ta.sub.2 O.sub.5 0-5 wherein RO is selected from MgO, CaO, SrO and BaO in specified percentages, and mixtures thereof and wherein the ratio Al.sub.2 O.sub.3 to RO is 1.5-4.

Abstract: A boron doped, silicon oxide-forming film is produced on a semiconductor wafer by coating the wafer with a solution of a silicon compound and a boron compound, in a blend of two polar organic solvents, one of which has a low boiling point, and the other has a high boiling point, between 185.degree. and 300.degree. C. During a subsequent heating step, the high boiling point solvent redissolves any crystalline precipitate that forms during spin-on, giving a more uniform film for diffusion, and consequently a damage-free wafer surface.

Abstract: A NTD semiconductor material comprising polycrystalline silicon having a mean grain size less than 1000 microns and containing phosphorus dispersed uniformly throughout the silicon rather than at the grain boundaries.

Abstract: A method for recovering Tb.sub.4 O.sub.7 from a glass containing terbium oxide is disclosed, the method including the steps of:I. fusing the glass containing terbium oxide with NaOH to provide a solid fusion product;Ii. slurrying the fusion product of Step I to disperse solid particles of Tb.sub.4 O.sub.7 and any Li.sub.2 SiO.sub.3 present and to dissolve any Al.sub.2 O.sub.3, NaOH and Na.sub.2 SiO.sub.3 to thereby separate the same from the solid particles of Tb.sub.4 O.sub.7 ;Iii. reacting the solid particles of Tb.sub.4 O.sub.7 of Step II with HNO.sub.3 to provide Tb(NO.sub.3).sub.3 ;Iv. reacting the Tb(NO.sub.3)3with oxalic acid to form Tb.sub.2 (C.sub.2 O.sub.4).sub.3 ; andV. firing the Tb.sub.2 (C.sub.2 O.sub.4).sub.3 to form CO.sub.2 and solid Tb.sub.4 O.sub.7 to that is recovered from the glass.

Abstract: Disclosed is a solid diffusion source for the phosphorus doping of semiconductors, which comprises a substance composed of at least one kind of compound R.sub.2 O.sub.3 selected from the group consisting of Y.sub.2 O.sub.3, La.sub.2 O.sub.3 and Ce.sub.2 O.sub.3 and P.sub.2 O.sub.5 and containing mainly a compound with a chemical formula R.sub.2 O.sub.3.5P.sub.2 O.sub.5.

Abstract: A phosphorus nitride-silicon oxide composition having good thermal stability and diffusion characteristics for use as a diffusant source of n-type impurities for a semi-conductor device.

Abstract: Disclosed are B.sub.2 O.sub.3 -containing glass-ceramic bodies made by in situ thermal crystallization of glasses and useful as a host for diffusion doping of semiconductors by the vapor phase transport of B.sub.2 O.sub.3 to the semiconductor from the glass-ceramic which in mole percent consists essentially of over 40 and up to 60 SiO.sub.2, 10 to 30 Al.sub.2 O.sub.3, 20 to 40 B.sub.2 O.sub.3 and 3 to 20 alkaline earth oxides including 1 to 15 BaO wherein the ratio of Al.sub.2 O.sub.3 to alkaline earth oxides is from 1.5 to 4.

Abstract: A solid source consisting essentially of high purity aluminum metaphosphate, Al(PO.sub.3).sub.3 is used for introducing elemental phosphorus into P-type silicon chips or wafers of semi-conductor grade. The aluminum metaphosphate functions as a source for the controlled release of P.sub.2 O.sub.5 vapors which are directed to the desired face of the silicon wafer. The reverse side of the silicon wafer receives little or no phosphorus and consequently retains its character as P-type silicon.

Abstract: A method for the preparation of pyrophosphates such as SiP.sub.2 O.sub.7 is disclosed, whereby the undesired formation of by-products such as Si.sub.2 P.sub.2 O.sub.9 is minimized. Such pyrophosphates are particularly suitable for the formation of solid semi-conductor diffusion sources, wherein the presence of by-product is seriously detrimental.

Abstract: A phosphorus nitride-silicon oxide composition having good thermal stability and diffusion characteristics for use as a diffusant source of n-type impurities for a semi-conductor device.

Abstract: Solid diffusion sources for phosphorus doping comprise from 10 to 95 percent SiP.sub.2 O.sub.7 with an inert phase of ZrP.sub.2 O.sub.7. Such materials may be hot-pressed to obtain diffusion source wafers of the appropriate dimensions and porosity. A preferred composition comprises from 25 to 75 weight percent SiP.sub.2 O.sub.7, the balance ZrP.sub.2 O.sub.7. Fabrication parameters range from about 750 psi to about 6,000 psi pressure during hot-pressing, at temperatures from about 800.degree.C to about 1450.degree.C.

Abstract: A phosphorus nitride-silicon oxide composition having good thermal stability and diffusion characteristics for use as a diffusant source of n-type impurities for a semi-conductor device.