Abstract: In a method of manufacturing a semiconductor device, a first-conductivity type implantation region is formed in a semiconductor substrate, and a carbon implantation region is formed at a side boundary region of the first-conductivity type implantation region.

Abstract: A method includes laying out a standard cell region, with a rectangular space being within the standard cell region. The standard cell region includes a first row of standard cells having a first bottom boundary facing the rectangular space, and a plurality of standard cells having side boundaries facing the rectangular space. The plurality of standard cells include a bottom row of standard cells. A memory array is laid out in the rectangular space, and a second bottom boundary of the bottom row and a third bottom boundary of the memory array are aligned to a same straight line. A filler cell region is laid out in the rectangular space. The filler cell region includes a first top boundary contacting the first bottom boundary of the first row of standard cells, and a fourth bottom boundary contacting a second top boundary of the memory array.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes: a first standard cell; and a second standard cell; wherein a cell width of the first standard cell along a first direction is substantially the same as a cell width of the second standard cell along the first direction, and a cell height of the first standard cell along a second direction perpendicular to the first direction is substantially greater than a cell height of the second standard cell along the second direction.

Abstract: A method for producing a 3D memory device including: providing a first level including a single crystal layer and control circuits, where the control circuits include a plurality of first transistors; forming at least one second level above the first level; performing a first etch step including etching holes within the second level; performing processing steps to form a plurality of first memory cells within the second level, where each of the first memory cells include one of a plurality of second transistors, where the control circuits include memory peripheral circuits, where at least one first memory cell is at least partially atop a portion of the memory peripheral circuits, and where fabrication processing of the first transistors accounts for a temperature and time associated with processing the second level and the plurality of second transistors by adjusting a process thermal budget of the first level accordingly.

Abstract: The present disclosure relates to a semiconductor memory device and a method of fabricating the same, and the semiconductor memory device includes a substrate, an active structure and a shallow trench isolation. The active structure is disposed within the substrate and includes a first active region and a second active region. The first active region includes a plurality of active region units, and the second active region is disposed at an outer side of the first active region to directly connect to a portion of the active region units. The second active region includes a plurality of first openings disposed an edge of the second active region. The shallow trench isolation is disposed within the substrate, to surround the active structure.

Abstract: There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact property between a first material layer (11) and a second material layer (12) (laser light irradiation, pressure application, or the like) is performed before peeling, and then peeling is conducted by physical means. Therefore, sufficient separation can be easily conducted in an inner portion of the second material layer (12) or an interface thereof.

Abstract: A semiconductor device includes standard cells disposed in a first direction parallel to an upper surface of a substrate and a second direction intersecting the first direction, each standard cell including an active region, a gate structure disposed to intersect the active region, source/drain regions on the active region at both sides of the gate structure, and first interconnection lines electrically connected to the active region and the gate structures; filler cells disposed between at least portions of the standard cells, each filler cell including a filler active region and a filler gate structure disposed to intersect the filler active region; and a routing structure disposed on the standard cells and the filler cells and including second interconnection lines electrically connecting the first interconnection lines of different standard cells to each other, wherein the second interconnection lines includes a first line having a first width and a second line having a second width larger than the first

Abstract: An analog high gain transistor is disclosed. The formation of the analog high gain transistor is highly compatible with existing CMOS processes. The analog high gain transistor includes a double well, which includes the well implants of the low voltage (LV) and intermediate voltage (IV) transistors. In addition, the analog high gain transistor includes light doped extension regions of IV transistor and a thin gate dielectric of the LV transistor.

Abstract: A method for producing a 3D memory device, the method comprising: providing a first level comprising a single crystal layer; forming at least one second level above said first level; performing a first etch step comprising etching holes within said second level; forming at least one third level above said at least one second level; performing a second etch step comprising etching holes within said third level; performing additional processing steps to form a plurality of first memory cells within said second level and a plurality of second memory cells within said third level, wherein each of said first memory cells comprise one first transistor, wherein each of said second memory cells comprise one second transistor, wherein at least one of said first or second transistors has a channel, a source and a drain having the same doping type, and wherein said forming at least one third level comprises forming a window within said third level to allow lithography alignment through said third level to an alignment m

Abstract: Various implementations described herein refer to a method. The method may include providing multiple rows of cells having porosity segments including a first row of cells having first porosity segments and a second row of cells having second porosity segments that are arranged differently than the first porosity segments. The method may include providing multiple power distribution rails for the multiple rows of cells having a first power distribution rail and a second power distribution rail disposed adjacent to the first row of cells and the second row of cells. The method may include adjusting position of the second row of cells with respect to the first row of cells to align one or more of the second porosity segments with one or more of the first porosity segments to enable rail stitch insertion between the first power distribution rail and the second power distribution rail.

Abstract: Integrated circuit (IC) cell architectures including a crenellated interconnect trace layout. A crenellated trace layout may be employed where an IC cell includes transistor having a source/drain terminal interconnected through a back-side (3D) routing scheme that reduces front-side routing density for a given transistor footprint. In the crenellated layout, adjacent interconnect traces or tracks may have their ends staggered according to a crenellation phase for the cell. Crenellated tracks may intersect one cell boundary with adjacent tracks intersecting an opposite cell boundary. Track ends may be offset by at least the width of an underlying orthogonal interconnect trace. Crenellated track ends may be offset by the width of an underlying orthogonal interconnect trace and half a spacing between adjacent orthogonal interconnect traces.

Abstract: A device includes a first buried layer over a substrate, a second buried layer over the first buried layer, a first well over the first buried layer and the second buried layer, a first high voltage well, a second high voltage well and a third high voltage well extending through the first well, wherein the second high voltage well is between the first high voltage well and the third high voltage well, a first drain/source region in the first high voltage well, a first gate electrode over the first well, a second drain/source region in the second high voltage well and a first isolation region in the second high voltage well, and between the second drain/source region and the first gate electrode, wherein a bottom of the first isolation region is lower than a bottom of the second drain/source region.

Abstract: Apparatuses including circuit layout regions of a semiconductor device and methods of designing the circuit layout regions of a semiconductor device are described. An example apparatus includes a first layout region including a first transistor area including at least one first transistor, at least one contact in proximity to the first transistor area, and a first resistor area comprising at least one first resistor coupled to the at least one first transistor. The first transistor area and the at least one contact are aligned in a first direction, and the first transistor area and the first resistor area are aligned in a second direction. The second direction may be substantially perpendicular to the first direction. The at least one contact may be one of a substrate contact and a well contact.

Abstract: A variable resistance memory array, programming a variable resistance memory element and methods of forming the array. A variable resistance memory array is formed with a plurality of word line transistors surrounding each phase change memory element. To program a selected variable resistance memory element, all of the bitlines are grounded or biased at the same voltage. A top electrode select line that is in contact with the selected variable resistance memory element is selected. The word line having the word line transistors surrounding the selected variable resistance memory element are turned on to supply programming current to the element. Current flows from the selected top electrode select line through the variable resistance memory element into the common source/drain region of the surrounding word line transistors, across the transistors to the nearest bitline contacts. The word lines are patterned in various lattice configurations.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes: a first standard cell; and a second standard cell; wherein a cell width of the first standard cell along a first direction is substantially the same as a cell width of the second standard cell along the first direction, and a cell height of the first standard cell along a second direction perpendicular to the first direction is substantially greater than a cell height of the second standard cell along the second direction.

Abstract: Embodiments of bonded 3D memory devices and fabrication methods thereof are disclosed. In an example, a 3D memory device includes a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes a first memory stack having a plurality of first conductor layers and a first bonding layer having a plurality of first word line bonding contacts conductively connected to the plurality of first conductor layers, respectively. A second semiconductor structure includes a second memory stack having a plurality of second conductor layers and a second bonding layer having a plurality of second word line bonding contacts conductively connected to the plurality of second conductor layers, respectively. The 3D memory device also includes a bonding interface between the first bonding layer and the second bonding layer, at which the first word line bonding contacts are in contact with the second word line bonding contacts.

Abstract: A finFET block architecture includes a first set of semiconductor fins having a first conductivity type, and a second set of semiconductor fins having a second conductivity type. An inter-block insulator is placed between outer fins of the first and second sets. A patterned gate conductor layer includes a first plurality of gate traces extending across the set of fins in the first block without crossing the inter-block insulator, and a second plurality of gate traces extending across the set of fins in the second block without crossing the inter-block insulator. Patterned conductor layers over the gate conductor layer are arranged in orthogonal layout patterns, and include an inter-block connector arranged to connect gate traces in the first and second blocks.

Abstract: A method of manufacturing a semiconductor device (for a layout diagram stored on a non-transitory computer-readable medium) includes generating the layout diagram. The generating the layout diagram includes: placing standard functional cells to partially fill a logic area of the layout diagram according to at least one corresponding schematic design thereby leaving, as unfilled, a spare region in the logic area; selecting a first pitch for additional cells to be placed in the spare region, wherein use of the first pitch minimizes wasted space in the spare region; selecting standard not-yet-programmed (SNYP) spare cells, which are to become at least some of the additional cells, according to the first pitch; and placing the selected SNYP spare cells into the spare region of the layout diagram.

Abstract: Circuits and methods for compensating mismatches in sense amplifiers are disclosed. In one example, a circuit is disclosed. The circuit includes: a first branch, a second branch, a first plurality of trimming transistors and a second plurality of trimming transistors. The first branch comprises a first transistor, a second transistor, and a first node coupled between the first transistor and the second transistor. The second branch comprises a third transistor, a fourth transistor, and a second node coupled between the third transistor and the fourth transistor. The first node is coupled to respective gates of the third transistor and the fourth transistor. The second node is coupled to respective gates of the first transistor and the second transistor. The first plurality of trimming transistors is coupled to the second transistor in parallel. The second plurality of trimming transistors is coupled to the fourth transistor in parallel.

Abstract: A memory cell array includes a first memory cell, a word line and a first bit line. The first memory cell is arranged in a first row in a first direction. The word line extends in the first direction and is coupled to the first memory cell. The first bit line extends in a second direction different from the first direction, and is coupled to the first memory cell. The first memory cell corresponds to a five transistor (5T) memory cell. The first memory cell includes a first active region having a first length in the second direction, and a second active region having a second length in the second direction and being different from the first length. The first active region and the second active region extend in the second direction, are located on a first level and are separated from each other in the first direction.

Abstract: Disclosed is an image sensor comprising a first substrate including a plurality of pixels, a photoelectric conversion region in the first substrate at each of the pixels, a first capacitor on the first substrate, and a shield structure spaced apart from and surrounding the first capacitor.

Abstract: A 3D semiconductor device, the device including: a first single crystal layer including a plurality of first transistors and a first metal layer, where the first metal layer includes interconnecting the first transistors forming, at least in part a plurality of logic gates; a plurality of second transistors overlaying, at least in part the first single crystal layer; a plurality of third transistors overlaying, at least in part the second transistors; a plurality of fourth transistors overlaying, at least in part the third transistors; a second metal layer overlaying, at least in part the fourth transistors; where the fourth transistors are aligned with less than 100 nm misalignment to the first transistors, where at least one of the plurality of vias has a radius of less than 200 nm, where a memory cell includes at least one of the third transistors.

Abstract: Provided are an electro-optical device and an electronic apparatus enabling a channel length of a transistor provided in a peripheral circuit to be set to an appropriate dimension even when a region available for disposing the peripheral circuit has a reduced width. A plurality of N-channel type transistors formed in a scan line drive circuit of an electro-optical device each include a light-shielding layer, an insulating layer, a semiconductor layer, a gate insulating layer, and a gate electrode laminated one on another in order on the one surface side of a first substrate, and a slit overlapping a channel region in planer view extends in a channel width direction to the light-shielding layer. Therefore, in the semiconductor layer, step part reflecting a shape of each of end portions of the light-shielding layer via the insulating layer extend in the channel width direction in the channel region.

Abstract: Disclosed are various embodiments to enhance the security of a circuit design after a global routing of the circuit design and an assignment of wire layers for the circuit design. A tree can be extracted from the circuit design. The tree can include multiple gates and location information for the gates. The tree can be perturbed by moving one or more locations of one or more gates.

Abstract: Provided is a layout configuration that helps facilitate manufacturing a semiconductor integrated circuit device including a nanowire FET. A nanowire FET in a standard cell includes Na (where Na is an integer of 2 or more) nanowires extending in an X direction, and a nanowire FET in a standard cell includes Nb (where Nb is an integer of 1 or more and less than Na) nanowires extending in the X direction. At least one of both ends, in the Y direction, of a pad of the nanowire FET is aligned in the X direction with an associated one of both ends, in the Y direction, of a pad of the nanowire FET.

Abstract: A magnetoresistive random access memory device (MRAM) device is described. The MRAM device has a stack arrangement in which a tunnel barrier layer is formed over a magnetizable reference layer, a metal layer is formed over the tunnel barrier layer, a free layer of a magnetizable material is formed over the metal layer, and an oxide layer is formed over the free layer as a cap layer. The resulting MRAM device has a thin free layer that exhibits a low magnetic moment.

Abstract: The present disclosure provides a pixel structure for a CMOS image sensor and a manufacturing method therefor, the pixel structure comprising a photo diode and a source follow transistor, and an isolation strip is provided between the photo diode and the source follow transistor, and a contact hole is provided in a drain terminal of the source follow transistor, with the width of a part, corresponding to the contact hole portion, of a drain terminal active area of the source follow transistor being smaller than the width of the rest of the drain terminal active area, so that the width of a part, corresponding to the contact hole portion, of the isolation strip is greater than the width of a part, corresponding to the rest of the drain terminal active area, of the isolation strip.

Abstract: A scan driver, includes a plurality of stage circuits, each of which includes a driving circuit unit providing an output signal and an inverter inverting the output signal of the driving circuit unit and generating a scan signal, in which the inverter includes a first transistor and a second transistor, which are complementarily operated, the first transistor is a P-type polysilicon transistor, and the second transistor is an N-type oxide semiconductor transistor. A display device may include the scan driver.

Abstract: A DRC tool optimized for analyzing early-stage (“dirty”) IC layout designs by performing one or more of (a) automatically selectively focusing DRC processing to selected regions (i.e., layers and/or cells) of a dirty IC layout design that are most likely to provide useful error information to a user, (b) automatically selectively ordering and/or limiting rule checks performed during DRC processing to provide the user with a manageable amount of error data in a predetermined reasonable amount of time, and (c) automatically providing error data in a graphical manner using a contrasting dot to indicate the location of each rule violation, whereby relevant problem areas of the dirty IC layout design are easily identified for correction by a human user, and non-relevant areas (e.g., missing block regions) can be efficiently identified and ignored, thereby facilitating efficient modification of the IC layout design.

Abstract: An electrostatic discharge (ESD) protection device having a source region coupled to a first electrical node, a first drain region coupled to a second electrical node different from the first electrical node, and an extended drain region between the source region and the first drain region. The extended drain region includes a number N of electrically floating doped regions and a number M of gate regions coupled to the second electrical node, where N and M are integers greater than 1 and N is equal to M. Each electrically floating doped region of the N number of floating doped regions alternates with each gate region of the M number of gate regions.

Abstract: Systems, apparatuses and methods related to access devices formed with conductive contacts are described. An example apparatus may include an access device that includes a field-effect transistor (FET). A vertical pillar may be formed to include a channel of the FET, with a portion of the vertical pillar formed between at least two gates of the FET (i.e., a multi-gate Fin-FET). A conductive contact may be coupled to a body region of the vertical pillar.

Abstract: Electrostatic discharge (ESD) devices and methods of manufacture are provided. The method includes forming a plurality of fin structures and a mesa structure from semiconductor material. The method further includes forming an epitaxial material with doped regions on the mesa structure and forming gate material over at least the plurality of fin structures. The method further includes planarizing at least the gate material such that the gate material and the epitaxial material are of a same height. The method further includes forming contacts in electrical connection with respective ones of the doped regions of the epitaxial material.

Abstract: A semiconductor integrated circuit device including standard cells including fin transistors includes, at a cell row end, a cell-row-terminating cell that does not contribute to a logical function of a circuit block. The cell-row-terminating cell includes a plurality of fins extending in an X direction. Ends of the plurality of fins on the inner side of the circuit block are near a gate structure placed at a cell end and do not overlap with the gate structure in a plan view, and ends of the plurality of fins on an outer side of the circuit block overlap with any one of a gate structure in a plan view.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes: a first standard cell; and a second standard cell; wherein a cell width of the first standard cell along a first direction is substantially the same as a cell width of the second standard cell along the first direction, and a cell height of the first standard cell along a second direction perpendicular to the first direction is substantially greater than a cell height of the second standard cell along the second direction.

Abstract: A silicon-on-insulator (SOI) CMOS transistor structure includes a plurality of series-connected SOI CMOS transistors, including a plurality of parallel source/drain regions, a plurality of channel/body regions located between the plurality of source/drain regions, and a polysilicon gate structure located over the plurality of channel regions. The polysilicon gate structure includes a plurality of polysilicon gate fingers, wherein each polysilicon gate finger extends over a corresponding one of the channel/body regions. A silicide blocking structure is formed over portions of the polysilicon gate fingers, wherein channel/body contact regions, which extend at least partially under the silicide blocking structure, provide electrical connections to the parallel channel/body regions.

Abstract: An imaging system includes a focal plane array comprising a first row of photodetectors, a second row of photodetectors adjacent to the first row of photodetectors, and a segmented isolation grid including portions disposed between photodetectors in the first row of photodetectors and photodetectors in the second row of photodetectors.

Abstract: Methods and apparatus for forming a semiconductor structure, including depositing a doping stack having a first surface atop a high-k dielectric layer, wherein the doping stack includes at least one first metal layer having a first surface, at least one second metal layer comprising a first aluminum dopant and a first surface, wherein the second metal layer is atop the first surface of the first metal layer, and at least one third metal layer atop the first surface of the second metal layer; depositing an anneal layer atop the first surface of the doping stack; annealing the structure to diffuse at least the first aluminum dopant into the high-k dielectric layer; removing the anneal layer; and depositing at least one work function layer atop the first surface of the doping stack.

Abstract: Two or more types of fin-based transistors having different gate structures and formed on a single integrated circuit are described. The gate structures for each type of transistor are distinguished at least by the thickness or composition of the gate dielectric layer(s) or the composition of the work function metal layer(s) in the gate electrode. Methods are also provided for fabricating an integrated circuit having at least two different types of fin-based transistors, where the transistor types are distinguished by the thickness and composition of the gate dielectric layer(s) and/or the thickness and composition of the work function metal in the gate electrode.

Abstract: A first PMOS transistor is defined by a gate electrode extending along a first gate electrode track. A second PMOS transistor is defined by a gate electrode extending along a second gate electrode track. A first NMOS transistor is defined by a gate electrode extending along a third gate electrode track. A second NMOS transistor is defined by a gate electrode extending along a fourth gate electrode track. The gate electrodes of the first PMOS transistor and the first NMOS transistor are electrically connected to a first gate node. The gate electrodes of the second PMOS transistor and the second NMOS transistor are electrically connected to a second gate node. Each of the first PMOS transistor, the first NMOS transistor, the second PMOS transistor, and the second NMOS transistor has a respective diffusion terminal electrically connected to a common output node.

Abstract: Some embodiments include an integrated structure having a stack of alternating dielectric levels and conductive levels, vertically-stacked memory cells within the conductive levels, an insulative material over the stack and a select gate material over the insulative material. An opening extends through the select gate material, through the insulative material, and through the stack of alternating dielectric and conductive levels. A first region of the opening within the insulative material is wider along a cross-section than a second region of the opening within the select gate material, and is wider along the cross-section than a third region of the opening within the stack of alternating dielectric levels and conductive levels. Channel material is within the opening and adjacent the insulative material, the select gate material and the memory cells. Some embodiments include methods of forming vertically-stacked memory cells.

Abstract: A CMOS device with a plurality of PMOS transistors and a plurality of NMOS transistors includes a first interconnect and a second interconnect on an interconnect level connecting a first subset and a second subset of PMOS drains together, respectively. The first and second subsets are different and the first and second interconnect are disconnected on the interconnect level. A third interconnect and a fourth interconnect on the interconnect level connect a first subset and a second subset of the NMOS drains together, respectively. The third interconnect and the fourth interconnect are disconnected on the interconnect level. The first, second, third, fourth interconnects are coupled together through at least one other interconnect level. Additional interconnects on the interconnect level connect the first and third interconnects together, and the second and fourth interconnects together, to provide parallel current paths with a current path through the at least one other interconnect level.

Abstract: The present invention relates to a device and to a method for the quantitative detection of disorders in the field of vision of an eye of a test subject, in particular in the case of eye diseases which are associated with macular edema, wherein a square grid is displayed on a display device whose grid lines which are perceived by the test subject as curved can be modified by the subject in such a way that the subject can view an orthogonal reticule again. Such lines perceived as curved can be modified by input signals which modify the boundary curves defined by the boundary functions in such a way that the originally displayed linear reticule is perceived again, wherein the geometric deviations caused by transformation of the regions of the square reticule perceived as curved from the originally present squares are determined quantitatively as the sum of the absolute values of the horizontal deviations and as the sum of the absolute values of the vertical deviations.

Abstract: Some embodiments include an assembly having bitlines extending along a first direction. Semiconductor pillars are over the bitlines and are arranged in an array. The array includes columns along the first direction and rows along a second direction which crosses the first direction. Each of the semiconductor pillars extends vertically. The semiconductor pillars are over the bitlines. The semiconductor pillars are spaced from one another along the first direction by first gaps, and are spaced from one another along the second direction by second gaps. Wordlines extend along the second direction, and are elevationally above the semiconductor pillars. The wordlines are directly over the first gaps and are not directly over the semiconductor pillars. Gate electrodes are beneath the wordlines and are coupled with the wordlines. Each of the gate electrodes is within one of the second gaps. Shield lines may be within the first gaps.

Abstract: A method of making a vertical transistor device includes forming a front gate and a back gate opposite a major surface of a substrate. The front gate and the back gate are symmetric and arranged on opposing sides of a channel between the front gate and the back gate. The channel extends from a drain to a source. The method includes disposing a mask to cover the front gate and removing the back gate. The method further includes replacing the back gate with a layer of insulator and another back gate stack. The another back gate stack only covers a junction between the channel and the source, and remaining portions of the back gate are the layer of insulator.

Abstract: A device includes a memory array. The memory array includes a first sub-bank, a second sub-bank, a strap cell and a continuous data line. The strap cell is arranged between the first sub-bank and the second sub-bank. The continuous data line includes a first portion coupled to the first sub-bank and a second portion disposed across the second sub-bank. The first portion of the continuous data line and the second portion of the continuous data line are disposed at separate layers above the strap cell.

Abstract: A method of manufacturing a non-volatile memory is described. A substrate including a first region and a second region located at periphery of the first region is provided. A plurality of stacked structures are formed on the first region of the substrate. A wall structure is formed on the second region of the substrate. A conductive layer is formed over the substrate. A bottom anti-reflective coating is formed over the conductive layer. The bottom anti-reflective coating and the conductive layer are etched back. The conductive layer is patterned.

Abstract: A vertical SRAM cell includes a first (1st) inverter having a 1st common gate structure operatively connecting channels of a 1st pull-up (PU) and a 1st pull-down (PD) transistor. A 1st metal contact electrically connects bottom source/drain (S/D) regions of the 1st PU and 1st PD transistors. A second (2nd) inverter has a 2nd common gate structure operatively connecting channels of a 2nd PU and a 2nd PD transistor. A 2nd metal contact electrically connects bottom S/D regions of the 2nd PU and 2nd PD transistors. A 1st cross-coupled contact electrically connects the 2nd common gate structure to the 1st metal contact. The 2nd common gate structure entirely surrounds a perimeter of the 1st cross-coupled contact. A 2nd cross-coupled contact electrically connects the 1st common gate structure to the 2nd metal contact. The 1st common gate structure entirely surrounds a perimeter of the 2nd cross-coupled contact.

Abstract: Semiconductor structures are provided. The semiconductor structure includes a base including first, second, third, and fourth regions, used for first, second, third, and fourth transistors, respectively. A gate dielectric layer is on the first, second, third and fourth regions of the base. A first material layer is on the gate dielectric layer. A second material layer is on the first material layer above the fourth region. A third material layer is on the first material layer above the third region and on the second material layer above the fourth region. A fourth material layer is on the third material layer above the third and fourth regions and on the first material layer on the second region. The first material layer above the first region is used as a first work function layer for the first transistor.

Abstract: A memory cell array includes a first memory cell arranged in a first row in a first direction and a second memory cell arranged in a second row in the first direction. The first memory cell or the second memory cell includes a set of active regions, a set of gates and a first set of conductive structures. Each of the active regions of the set of active regions is separated from an adjacent active region in the first direction by a first pitch. The set of active regions extends in a second direction. The set of active regions includes a first active region adjacent to a first side of the first memory cell, and a second active region adjacent to a second side of the first memory cell. A length of the first active region is different from a length of the second active region.

Abstract: The present invention provides an integrated circuit with a standard cell of an inverter standard cell. The integrated circuit includes: a first metal line and a second metal line stretching along a first direction; a first dummy gate and a second dummy gate stretching along a second direction; Plural fin structures stretching along the first direction; A gate structure disposed on the fin structures and stretching along the second direction; Two long contact plugs disposed at one side of the gate structure; two short contact plugs disposed at the other side of the gate structure; a gate contact plug disposed on the gate structure; Plural via plugs disposed on the long contact plugs, the short contact plugs and the gate contact plugs; A metal layer includes the first metal line, the second metal line, a third metal line and a fourth metal line.