Electrical Characteristics Due To Properties Of Entire Semiconductor Body Rather Than Just Surface Region (epo) Patents (Class 257/E29.002)
- Characterized by particular design considerations to control electrical field effect within device (EPO) (Class 257/E29.006)
- Characterized by shape of semiconductor body (EPO) (Class 257/E29.022)
- Characterized by shape, relative sizes or dispositions of semiconductor regions or junctions between regions (EPO) (Class 257/E29.024)
- With semiconductor regions connected to electrode carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (EPO) (Class 257/E29.029)
- With semiconductor regions connected to electrode not carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (EPO) (Class 257/E29.043)
- Single quantum well structures (EPO) (Class 257/E29.069)
- Structures with periodic or quasi-periodic potential variation, (e.g., multiple quantum wells, superlattices) (EPO) (Class 257/E29.072)
- Two or more elements from two or more groups of Periodic Table of elements (e.g., alloys) (EPO) (Class 257/E29.079)
- Only element from fourth group of Periodic System in uncombined form (EPO) (Class 257/E29.082)
- Selenium or tellurium only (EPO) (Class 257/E29.087)
- Only Group III-V compounds (EPO) (Class 257/E29.089)
- Only Group II-VI compounds (EPO) (Class 257/E29.094)
- Semiconductor materials other than Group IV, selenium, tellurium, or Group III-V compounds (EPO) (Class 257/E29.1)