Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, a p-side electrode, a plurality of n-side electrodes, a first insulating film, a p-side interconnect unit, and an n-side interconnect unit. The p-side interconnect unit is provided on the first insulating film to connect to the p-side electrode through a first via piercing the first insulating film. The n-side interconnect unit is provided on the first insulating film to commonly connect to the plurality of n-side electrodes through a second via piercing the first insulating film. The plurality of n-side regions is separated from each other without being linked at the second surface. The p-side region is provided around each of the n-side regions at the second surface.

Abstract: An object is to provide a light-emitting module in which a light-emitting element suffering a short-circuit failure does not cause wasteful electric power consumption. Another object is to provide a light-emitting panel in which a light-emitting element suffering a short-circuit failure does not allow the reliability of an adjacent light-emitting element to lower. Focusing on heat generated by a light-emitting element suffering a short-circuit failure, provided is a structure in which electric power is supplied to a light-emitting element through a positive temperature coefficient thermistor (PTC thermistor) thermally coupled with the light-emitting element.

Abstract: Systems and methods for protecting electrical components such as light emitting diodes are described. In some embodiments, electrical components are protected from high level electrostatic discharge (“ESD”) events by a circuit board that provides an intrinsic level of ESD protection. At the same time, such electrical components are protected against low level ESD events by one or more diodes that are electrically coupled thereto. The one or more diodes may be thin film diodes comprising at least one layer of p-type semiconductive material and at least one layer of n-type semiconductive material. Devices including ESD protection and methods for manufacturing such devices are also described.

Abstract: A barrier film composite includes a decoupling layer and a barrier layer. The barrier layer includes a first region and a second region that is thinner than the first region.

Abstract: A white LED is provided. The white LED includes a P-type layer, a tunneling structure, an N-type layer, an N-type electrode, and a P-type electrode. The tunneling structure is disposed over the P-type layer. The tunneling structure includes a first barrier layer, an active layer and a second barrier layer. The first barrier layer includes a first metal oxide layer. The active layer includes a second metal oxide layer. The second barrier layer includes a third metal oxide layer. The N-type layer is disposed over the tunneling structure. The N-type electrode and the P-type electrode are respectively contacted with the N-type layer and the P-type layer. An energy gap of the second metal oxide layer is lower than an energy gap of the first metal oxide layer and is lower than an energy gap of the third metal oxide layer.

Abstract: An optoelectronic semiconductor component comprising at least one radiation emitting semiconductor chip disposed in a recess of a housing base body, wherein the recess is bounded laterally by a wall surrounding the semiconductor chip and is at least partially filled with an encapsulant that covers the semiconductor chip and is well transparent to an electromagnetic radiation emitted by the semiconductor chip An inner side of the wall, bounding the recess, is configured such that, as viewed looking down on the front side of the semiconductor component, a subarea of the inner side is formed which extends ring-like all the way around the semiconductor chip and which is in shadow as viewed from the radiation emitting semiconductor chip and which is at least partially covered by encapsulant all the way around the semiconductor chip. A housing base body for such a semiconductor component is also specified.

Abstract: A light emitting device includes a first semiconductor layer, an active layer, and a second semiconductor layer, and first and second electrodes electrically connected to the first and second semiconductor layers, respectively. The second electrode includes a reflective pad portion, a transparent electrode layer, a reflective finger portion and an electrode pad portion. The reflective pad portion is disposed in a region of an upper surface of the second semiconductor layer. The transparent electrode layer is disposed on the second semiconductor layer and has an opening encompassing the reflective pad portion such that the transparent electrode layer is not in contact with the reflective pad portion. The reflective finger portion extends from the reflective pad portion and has at least a portion thereof disposed on the transparent electrode layer. The electrode pad portion covers the reflective pad portion to be in contact with the transparent electrode layer.

Abstract: A technique of manufacturing a display device with high productivity is provided. In addition, a high-definition display device with high color purity is provided. By adjusting the optical path length between an electrode having a reflective property and a light-emitting layer by the central wavelength of a wavelength range of light passing through a color filter layer, the high-definition display device with high color purity is provided without performing selective deposition of light-emitting layers. In a light-emitting element, a plurality of light-emitting layers emitting light of different colors are stacked. The closer the light-emitting layer is positioned to the electrode having a reflective property, the shorter the wavelength of light emitted from the light-emitting layer is.

Abstract: Disclosed are a touch screen integrated organic light emitting display device which has a thin profile and is implemented in a flexible type and a method for fabricating the same. The touch screen integrated organic light emitting display device includes a film substrate, a first etch stopper layer and a first buffer layer sequentially formed on the film substrate, a thin film transistor array including thin film transistors formed on the first buffer layer, organic light emitting diodes connected to the thin film transistors, a passivation layer covering the thin film transistor array and the organic light emitting diodes, a touch electrode layer contacting the passivation layer, a second buffer layer and a second etch stopper layer sequentially formed on the touch electrode layer, and a polarizing plate formed on the second etch stopper layer.

Abstract: A light emitting device includes a light emitting element that emits light having a wavelength of 250 nm to 500 nm and a fluorescent layer that is disposed on the light emitting element. The fluorescent layer includes a phosphor having a composition expressed by the equation, ((M1?x1Eux1)3?ySi13?zAl3+zO2+uN21?w), and an average particle diameter of 12 ?m or more, wherein in the equation, M is an element that is selected from IA group elements, IIA group elements, IIIA group elements, IIIB group elements except Al, rare-earth elements, and IVB group elements, and x1, y, z, u, and w satisfy each of the inequalities simultaneously, that is to say each of the following inequalities is satisfied by the choice of values of the identified paramaters within the noted ranges of 0<x1<1, ?0.1<y<0.3, ?3<z?1, ?3<u?w?1.5, 2<u, w<21.

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes a first electrode layer having electrical continuity with the first semiconductor layer and a second electrode layer provided on the second semiconductor layer, the second electrode layer including a metal portion having a thickness not less than 10 nanometers and not more than 100 nanometers along a direction from the first semiconductor layer to the second semiconductor layer.

Abstract: A semiconductor light emitting device includes a semiconductor light source, a resin package surrounding the semiconductor light source, and a lead fixed to the resin package. The lead is provided with a die bonding pad for bonding the semiconductor light source, and with an exposed surface opposite to the die bonding pad The exposed surface is surrounded by the resin package in the in-plane direction of the exposed surface.

Abstract: A method of fabricating LED devices includes using a laser to form trenches between the LEDs and then using a chemical solution to remove slag creating by the laser.

Abstract: By controlling the luminance of light emitting element not by means of a voltage to be impressed to the TFT but by means of controlling a current that flows to the TFT in a signal line drive circuit, the current that flows to the light emitting element is held to a desired value without depending on the characteristics of the TFT. Further, a voltage of inverted bias is impressed to the light emitting element every predetermined period. Since a multiplier effect is given by the two configurations described above, it is possible to prevent the luminance from deteriorating due to a deterioration of the organic luminescent layer, and further, it is possible to maintain the current that flows to the light emitting element to a desired value without depending on the characteristics of the TFT.

Abstract: A light emitting diode (LED) includes a substrate, a temperature detecting pattern, and a semiconductor structure. The temperature detecting pattern is formed on the substrate. Then the semiconductor structure is formed on the temperature detecting pattern and the substrate. The semiconductor structure includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer. Per above-mentioned structural design, the temperature detecting pattern directly integrated into the LED can measure the actual temperature of PN junction with high precision.

Abstract: A flip-chip LED including a light emitting structure, a first dielectric layer, a first metal layer, a second metal layer, and a second dielectric layer is provided. The light emitting structure includes a first conductive layer, an active layer, and a second conductive layer. The active layer is disposed on the first conductive layer, and the second conductive layer is disposed on the active layer. The first metal layer is disposed on the light emitting structure and is contact with the first conductive layer, and part of the first metal layer is disposed on the first dielectric layer. The second metal layer is disposed on the light emitting structure and is in contact with the second conductive layer, and part of the second metal layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the first dielectric layer. The first conductive layer includes a rough surface so as to improve a light extraction efficiency.

Abstract: An organic light-emitting display apparatus including: a substrate; a plurality of pixels on a first surface of the substrate, each pixel of the pixels having a first region in which visible rays are emitted and a second region through which external light penetrates, such that the plurality of pixels provide a plurality of first and second regions; a plurality of pixel circuit units in the first region of each pixel, each pixel circuit unit of the pixel circuit units including at least one thin film transistor (TFT); a plurality of first electrodes independently disposed in the first region of each pixel, each first electrode of the first electrodes being electrically connected to each pixel circuit unit; a second electrode facing the first electrodes, the second electrode being electrically connected throughout the pixels; and an intermediate layer including an organic emitting layer between the first electrodes and the second electrode.

Abstract: Heat spreading substrate. In an embodiment in accordance with the present invention, an apparatus includes a first conductive layer, a first insulating layer disposed in contact with the first conductive layer and a thermally conductive layer disposed in contact with the first insulating layer, opposite the first conductive layer. The faces of the first conductive layer, the first insulating layer and the thermally conductive layer are substantially co-planar; and a sum of widths of faces of the first conductive layer, the first insulating layer and the thermally conductive layer is greater than a height of the faces. The first conductive layer and the first insulating layer may include rolled materials.

Abstract: A light emitting diodes (LEDs) is presented. The LED includes a stress-alleviation layer on a substrate. Open regions and stress-alleviation layer regions are formed on the substrate. Epitaxial layers are disposed on the substrate, at least in the open regions therein, thereby forming an LED structure. The substrate is diced through at least a first portion of the stress-alleviation regions, thereby forming the plurality of LEDs.

Abstract: An electro-optic device includes a light-emitting element disposed above a substrate, an optically transparent sealing film covering the light-emitting element, and a color filter disposed on the sealing film so as to adjoin the sealing film. The sealing film includes a thin portion overlapping at least part of the light-emitting element, and a thick portion surrounding the thin portion. The thin portion and the thick portion form a recess in the sealing film. The color filter fills the recess.

Abstract: A light-emitting apparatus has a light-emitting device and a supporting board. The light-emitting device has a pair of n-electrodes with a p-electrode therebetween, on the same plane. The supporting board includes an insulating substrate on which positive and negative electrodes are formed, opposing to the p- and n-electrodes of the light-emitting device, respectively. Bonding members bond the p- and n-electrodes with the positive and negative electrodes, respectively. The positive electrode on the supporting board is formed within the width region of the p-electrode and narrower in width than the width of the p-electrode, in a cross-section along a line extending through the pair of n-electrodes. The negative electrodes oppose to the n-electrodes, respectively, with the same widths, or with that side face of each of the negative electrodes which faces the positive electrode being retracted outwardly from that side face of each of the n-electrodes which faces the p-electrode.

Abstract: A nitride semiconductor laser device is provided herein that is reduced in capacitance to have a better response. The nitride semiconductor laser device includes: an active layer; an upper cladding layer which is stacked above the active layer; a low dielectric constant insulating film which is stacked above the upper cladding layer; and a pad electrode which is stacked above the low dielectric constant insulating film.

Abstract: The present invention relates to a light emitting device (1) comprising a light emitter (10) and a support (13) to which a plurality of protruding fibers (11) are attached. The light emitter (10) and the protruding fibers (11) are arranged to interact with light emitted from the light emitter (10) so that the light may be diffused. The plurality of protruding fibers comprises fibers (11) which are inclined or perpendicular in relation to the support (13).

Abstract: An organic electroluminescent display device in which a plurality of light-emitting cells each having an organic electroluminescent portion are arranged on a substrate, wherein, for each of the light-emitting cells, a first transistor which controls energization on the organic electroluminescent portion, and a second transistor which switches a signal to be given to an input of the first transistor are disposed, active layers of the first and second transistors are formed by an amorphous oxide semiconductor, and, the first and second transistors are formed so that, when the first and second transistors are driven under same conditions, an amount of an output current of the first transistor is smaller than an amount of an output current of the second transistor.

Abstract: A plurality of modified parts are formed at a first formation pitch for a line arranged along the M-plane of a single-crystal sapphire substrate to construct a modified region and cause a fracture occurring from the modified region to reach a principal surface of the single-crystal sapphire substrate. A plurality of modified parts are formed at a second formation pitch narrower than the first formation pitch for a line arranged along the A-plane of the single-crystal sapphire substrate to construct a modified region and cause a fracture occurring from the modified region to reach the principal surface of the single-crystal sapphire substrate. Along the lines, a knife edge is pressed against a wafer from the side of the single-crystal sapphire substrate opposite from the principal surface of the single-crystal sapphire substrate where the fractures have reached, to cut the wafer along the lines.

Abstract: A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises an LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. The composite layer comprises a first layer, and alternating plurality of second and third layers on the first layer, and a reflective layer on the topmost of said plurality of second and third layers. The second and third layers have a different index of refraction, and the first layer is at least three times thicker than the thickest of the second and third layers. For composite layers internal to the LED chip, conductive vias can be included through the composite layer to allow an electrical signal to pass through the composite layer to the LED.

Abstract: A light emitting device includes a second metal layer, a second semiconductor layer on the second metal layer, an active layer on the second semiconductor layer, a first semiconductor layer on the active layer, a first metal layer on the first semiconductor layer, an insulating layer between the second metal layer and the second semiconductor layer at a peripheral portion of an upper surface of the second metal layer, and a passivation layer surrounding lateral surfaces of the insulating layer, the second semiconductor layer, the active layer, and the first semiconductor layer, the passivation layer being on the second metal layer, wherein a lateral surface of the insulating layer is adjacent to a lateral surface of the second metal layer, and wherein a lowermost surface of the passivation layer is disposed lower than a lowermost surface of the insulating layer.

Abstract: Provided is a light-emitting element including a semiconductor substrate, an island structure formed on the semiconductor substrate and including at least a current confining layer and p-type and n-type semiconductor layers, a light-emitting thyristor formed in the island structure and having a pnpn structure, and a shift thyristor formed in the island structure and having a pnpn structure, wherein the island structure includes a first side surface having a first depth such that the first side surface does not reach the current confining layer in a formation region of the shift thyristor and a second side surface having a second depth such that the second side surface reaches at least the current confining layer in a formation region of the light-emitting thyristor, and an oxidized region selectively oxidized from the second side surface is formed in the current confining layer in the formation region of the light-emitting thyristor.

Abstract: A light emission package includes at least one solid state emitter, a leadframe including at least one electrical lead and a body structure encasing a portion of the leadframe. A thermal transfer material can be isolated from the at least one electrical lead. The body structure can include a plastic body structure wherein a rim portion can be disposed along a portion of the upper surface of the body structure. The light emission package can also include the at least one solid state emitter mounted over thermal transfer material using a direct metal-to-metal bond such as by eutectic die attachment. The light emission package is operable to emit light with an output of approximately 70% or greater of an initial light output for an extrapolated time of at least approximately 150,000 hours or more.

Abstract: A light emitting element comprises a first electrode, a second electrode configured to transmitting light, an organic layer arranged between the first and the second electrodes, comprising a light emitting layer, and a capping layer arranged on the second electrode and made of a material with a higher refractive index than the refractive index of the material constituting the second electrode. The material constituting the capping layer comprises at least one selected from the group consisting of triarylamine derivative, carbazole derivative, benzimidazole derivative and triazole derivative.

Abstract: A device includes a textured substrate having a trench extending from a top surface of the textured substrate into the textured substrate, wherein the trench comprises a sidewall and a bottom. A light-emitting device (LED) includes an active layer over the textured substrate. The active layer has a first portion parallel to the sidewall of the trench and a second portion parallel to the bottom of the trench.

Abstract: A light-emitting diode (LED) cutting method includes the following steps: positioning and retaining an LED die or an LED epitaxial substrate on a die retainer; introducing a liquid medium for preventing reflection of sound wave between a cutting tool and the die; activating a power source to drive a magnetostrictive material or piezoelectric ceramic material mounted on a machine to serve as a kinetic source by inducing volume expansion/compression that generates an up-and-down piston-like movement; and operating the cutting tool having super hard micro-particles of diamond, CBN, or SiC electroformed on the cutting tool to perform breaking cutting on an LED workpiece.

Abstract: A method for separating a light-emitting diode (LED) from a substrate comprises the following steps. First, a substrate is provided which includes a junction surface and a bottom surface far away from the junction surface. Then a plurality holes are formed on the junction surface. An LED structure is further grown on the junction surface, and includes a junction portion bonded to the junction surface. The bottom surface is then polished to be shrunk to communicate with the holes. Finally, the junction portion is etched by an etching liquid via the holes to separate the LED structure from the substrate. Accordingly, by forming the holes, the LED structure and the substrate can be separated through polishing and etching processes, thereby providing a high yield rate as well as reduced production costs.

Abstract: Parallel plate slot emission array. In accordance with an embodiment of the present invention, an article of manufacture includes a side-emitting light emitting diode configured to emit light from more than two surfaces. The article of manufacture includes a first sheet electrically and thermally coupled to a first side of the light emitting diode, and a second sheet electrically and thermally coupled to a second side of the light emitting diode. The article of manufacture further includes a plurality of reflective surfaces configured to reflect light from all of the surfaces of the light emitting diode through holes in the first sheet. The light may be reflected via total internal reflection.

Abstract: An array substrate for a liquid crystal display device includes: a gate line and a gate electrode on a substrate, the gate electrode connected to the gate line; a gate insulating layer on the gate line and the gate electrode, the gate insulating layer including an organic insulating material such that a radical of carbon chain has a composition ratio of about 8% to about 11% by weight; a semiconductor layer on the gate insulating layer over the gate electrode; a data line crossing the gate line to define a pixel region; source and drain electrodes on the semiconductor layer, the source electrode connected to the data line and the drain electrode spaced apart from the source electrode; a passivation layer on the data line, the source electrode and the drain electrode, the passivation layer having a drain contact hole exposing the drain electrode; and a pixel electrode on the passivation layer, the pixel electrode connected to the drain electrode through the drain contact hole.

Abstract: A display apparatus includes an active device array substrate, an opposite substrate disposed opposite to the active device array substrate, and a display medium disposed between the active device array substrate and the opposite substrate. The opposite substrate includes a first base and a light-shielding structure disposed on the first base and located between the first base and the active device array substrate. The light-shielding structure has a first dielectric layer, a second dielectric layer, a third dielectric layer, a metal layer, a fourth dielectric layer, a fifth dielectric layer, and a sixth dielectric layer stacked sequentially in a direction from the first base to the active device array substrate. The first, second, and third dielectric layers have different thicknesses. The fourth, fifth, and sixth dielectric layers have different thicknesses.

Abstract: Disclosed is a light emitting device having a plurality of light emitting cells and a package having the same mounted thereon. The light emitting device includes a plurality of light emitting cells which are formed on a substrate and each of which has an N-type semiconductor layer and a P-type semiconductor layer located on a portion of the N-type semiconductor layer. The plurality of light emitting cells are bonded to a submount substrate. Accordingly, heat generated from the light emitting cells can be easily dissipated, so that a thermal load on the light emitting device can be reduced. Meanwhile, since the plurality of light emitting cells are electrically connected using connection electrodes or electrode layers formed on the submount substrate, it is possible to provide light emitting cell arrays connected to each other in series.

Abstract: A semiconductor light emitting device includes a semiconductor light source, a resin package surrounding the semiconductor light source, and a lead fixed to the resin package. The lead is provided with a die bonding pad for bonding the semiconductor light source, and with an exposed surface opposite to the die bonding pad The exposed surface is surrounded by the resin package in the in-plane direction of the exposed surface.

Abstract: A display apparatus includes a display substrate and a counter substrate. The display substrate includes a first substrate and a plurality of pixel electrodes formed on the first substrate. The counter substrate includes a second substrate facing the first substrate, a common electrode formed on the second substrate, a first spacer formed on the common electrode and making contact with the display substrate, a second spacer having a first gap with the display substrate, a third spacer having a second gap larger than the first gap with the display substrate, and a fourth spacer having a third gap larger than the second gap with the display substrate.

Abstract: Disclosed are a light emitting device package and a light emitting apparatus. The light emitting device package comprises a package body comprising a light emitting surface inclined at an oblique angle with respect to a bottom surface, a plurality of lead electrodes in the package body, and at least one light emitting device electrically connected to the lead electrodes.

Abstract: A light-emitting module includes a substrate in an embodiment. The light-emitting module includes a first light-emitting element mounted on the substrate through a first connecting structure in an embodiment. The light-emitting module includes a second light-emitting element having a light-emitting efficiency that is more sensitive to a change in temperature than that of the first light-emitting element, and mounted on the substrate through a second connecting structure having a higher thermal radiation than the first connecting structure.

Abstract: A light-emitting apparatus has a light-emitting device and a supporting board. The light-emitting device has a pair of n-electrodes with a p-electrode therebetween, on the same plane. The supporting board includes an insulating substrate on which positive and negative electrodes are formed, opposing to the p- and n-electrodes of the light-emitting device, respectively. Bonding members bond the p- and n-electrodes with the positive and negative electrodes, respectively. The positive electrode on the supporting board is formed within the width region of the p-electrode and narrower in width than the width of the p-electrode, in a cross-section along a line extending through the pair of n-electrodes. The negative electrodes oppose to the n-electrodes, respectively, with the same widths, or with that side face of each of the negative electrodes which faces the positive electrode being retracted outwardly from that side face of each of the n-electrodes which faces the p-electrode.

Abstract: The present disclosure discloses an array substrate, an LCD device and a manufacturing method of the array substrate. The TFT-LCD array substrate includes a metal electrode; the metal electrode includes a conducting layer; one side of the conducting layer is provided with an adhesive layer made of VOxSiy material, and the other side is provided with a barrier layer. On one side of the metal electrode of the present disclosure, the vanadium metal and the siliceous material in the array substrate (such as glass, n+a-Si layer) generate a chemical reaction, and the vanadium and the siliceous material generate a chemical reaction to generate the adhesive layer made of VOxSiy material; thus, the metal electrode can be firmly fixed to the glass base material; meanwhile, VOxSiy has low contact resistance so that the metal layer has better conducting property.

Abstract: A solid state light source array including a transparent substrate and N rows of solid state light emitting element series is provided. Each row of the solid state light emitting element series includes M solid state light emitting elements connected in series, wherein N, M are integers and N?1, M?2. Each of the solid state emitting elements includes a first type electrode pad and a second type electrode pad. The first and the Mth solid state emitting elements of each row of the solid state light emitting element series are electrically connected to a first conductive line and a second conductive line located on the edges of the first surface via the first type electrode pad and the second type electrode pad, respectively. The first conductive line and the second conductive line are physically disconnected.

Abstract: Methods and devices for shielding displays from electrostatic discharge (ESD) are provided. In one example, a display of an electronic device may include a high resistivity shielding layer configured to protect electrical components from static charges. The display may also include a conductive layer electrically coupled to the high resistivity shielding layer and configured to decrease a discharge time of static charges from the high resistivity shielding layer. The display may include a grounding layer and a conductor electrically coupled between the conductive layer and the grounding layer to direct static charges from the conductive layer to the grounding layer.

Abstract: The present invention provides a Group III nitride semiconductor light-emitting device whose main surface is a plane which provides an internal electric field of zero, and which exhibits improved emission performance. The light-emitting device includes a sapphire substrate which has, in a surface thereof, a plurality of dents which are arranged in a stripe pattern as viewed from above; an n-contact layer formed on the dented surface of the sapphire substrate; a light-emitting layer formed on the n-contact layer; an electron blocking layer formed on the light-emitting layer; a p-contact layer formed on the electron blocking layer; a p-electrode; and an n-electrode. The electron blocking layer has a thickness of 2 to 8 nm and is formed of Mg-doped AlGaN having an Al compositional proportion of 20 to 30%.

Abstract: A modular LED array light source comprises an assembly of a plurality of solid-state LED array modules. Modules are abutted to provide a large area, high intensity and high-density array that provides substantially uniform irradiance. Preferably, in each module, a linear or rectangular array of groups of LED is provided in which the density of LED die in the array is higher at ends or edges of the modules abutting other modules, to provide improved uniformity of irradiance over the illuminated area between modules. Particular arrangements of clusters of LEDs are provided that reduce or overcome the discontinuity or dip in irradiance due to edge or wall effects caused by the spacing of LED die from edges of the substrate/packaging of each module. These arrangements are advantageous for hermetically sealed LED array modules, for example, which require a minimum wall thickness for an effective seal.

Abstract: A light-emitting diode packaging structure includes a thermally conductive substrate; a circuit layer provided on one surface of the substrate and having an electric connection element; at least one chip mounted on the circuit layer to electrically connect to the electric connection element; a light-reflective case enclosing at least part of the substrate and being formed of a window, via which light emitted by the chip is projected outward; and a light-pervious colloidal seal fitted in the window of the case to form a protection around the chip. With the above structure, heat produced by the chip during operation thereof may be effectively radiated and dissipated via the thermally conductive substrate.

Abstract: Provided are a light emitting device, a method for fabricating the light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a first conductive type semiconductor layer having a first top surface and a second top surface under the first top surface, an active layer on the first top surface of the first conductive type semiconductor layer, a second conductive type semiconductor layer on the active layer, a first electrode on the second top surface of the first conductive type semiconductor layer, an intermediate refractive layer on the second top surface of the first conductive type semiconductor layer, and a second electrode connected to the second conductive type semiconductor layer.

Abstract: A method for manufacturing an optoelectronic apparatus includes attaching bottom surfaces of first and second packaged optoelectronic semiconductor devices (POSDs) to a carrier substrate (e.g., a tape) so that there is a space between the first and second POSDs. An opaque molding compound is molded around portions of the first and second POSDs attached to the carrier substrate, so that peripheral surfaces of the first POSD and the second POSD are surrounded by the opaque molding compound, the space between the first and second POSDs is filled with the opaque molding compound, and the first and second POSDs are attached to one another by the opaque molding compound. The carrier substrate is thereafter removed so that electrical contacts on the bottom surfaces of the first and second POSDs are exposed. A window for each of the POSDs is formed during the molding process or thereafter.