Incandescent Lamp Gettering Patents (Class 313/548)
  • Patent number: 6956328
    Abstract: A tungsten halogen lamp (10) includes a light transmissive envelope (12), which encloses a tungsten filament (14) and a gaseous fill comprising an inert gas and a halogen-containing gas, such as an alkyl halide. In addition the fill includes a silicon-containing compound capable of gettering oxygen within the envelope. The atomic ratio of silicon to halogen in the envelope is selected so as to remove most, but not all of the oxygen present in the envelope A silicon:halogen ratio of less than about 0.5 more preferably, below about 0.4 has been found to be effective in this respect.
    Type: Grant
    Filed: September 18, 2003
    Date of Patent: October 18, 2005
    Assignee: General Electric Company
    Inventors: Thomas H. Yu, Shailesh R. Sheth, Gino Savarino, Bart P. Terburg
  • Patent number: 5428262
    Abstract: An electric incandescent lamp includes a metal getter strip secured to a filament. The getter strip has a closed circumferential bounding edge which defines a closed aperture through which the filament extends and an integral retaining portion biased against said filament for retaining the bounding edge between a pair of coil turns. In a favorable embodiment, the strip has opposing portions each with a respective closed aperture through which the filament extends. Tail portions bent against the filament bias the opposing bounding edge of the apertures between respective turns to secure the getter to the filament. The side edges of the getter are spaced from the lamp envelope to avoid blackening of the inner wall adjacent the getter strip.
    Type: Grant
    Filed: July 19, 1993
    Date of Patent: June 27, 1995
    Assignee: Philips Electronics North America Corporation
    Inventor: Robert L. Geier
  • Patent number: 5306907
    Abstract: A large area video camera is suitable for high energy imaging applications. The sensor-target of the camera tube is composed of TlBr, TlI, PbI.sub.2, or PbBr.sub.2 or a two layer structure comprising CsI and a photoconductive layer of materials such as amorphous silicon, amorphous selenium, cadmium sulphide, antimony trisulfide or antimony sulphide oxysulphide. A disclosed tube incorporates various modifications for dealing with problems associated with stray capacitance, premature electron leakage and secondary electron emission.
    Type: Grant
    Filed: March 12, 1993
    Date of Patent: April 26, 1994
    Assignee: The University of Connecticut
    Inventors: Sol Nudelman, Donald R. Ouimette