Abstract: A semiconductor torsional micro-electromechanical (MEM) switch is described having a conductive movable control electrode; an insulated semiconductor torsion beam attached to the movable control electrode, the insulated torsion beam and the movable control electrode being parallel to each other; and a movable contact attached to the insulated torsion beam, wherein the combination of the insulated torsion beam and the control electrode is perpendicular to the movable contact. The torsional MEM switch is characterized by having its control electrodes substantially perpendicular to the switching electrodes. The MEM switch may also include multiple controls to activate the device to form a single-pole, single-throw switch or a multiple-pole, multiple-throw switch. The method of fabricating the torsional MEM switch is fully compatible with the CMOS manufacturing process.
Type:
Grant
Filed:
March 21, 2002
Date of Patent:
March 9, 2004
Assignee:
International Business Machines Corporation
Inventors:
Richard P. Volant, Robert A. Groves, Kevin S. Petrarca, David M. Rockwell, Kenneth J. Stein
Abstract: A precision linear tuning circuit having particular utility to applications employing superconductors in a supercooled environment. Two capacitors, one fixed and one variable, are connected in parallel by an arrangement of shared, concentric electrodes. The variable capacitor includes one electrode and a movable facing dielectric which are tapered such that displacement of the dielectric results in a linear variation in tuning frequency.
Type:
Grant
Filed:
June 22, 1981
Date of Patent:
March 1, 1983
Assignee:
The United States of America as represented by the National Security Agency