Coherer Type Patents (Class 338/1)
  • Patent number: 7432526
    Abstract: A semiconductor device has a heterostructure including a first layer of semiconductor oxide material. A second layer of semiconductor oxide material is formed on the first layer of semiconductor oxide material such that a two dimensional electron gas builds up at an interface between the first and second materials. A passivation layer on the outer surface stabilizes the structure. The device also has a source contact and a drain contact.
    Type: Grant
    Filed: December 20, 2005
    Date of Patent: October 7, 2008
    Assignee: Palo Alto Research Center Incorporated
    Inventors: Christian G. Van de Walle, Peter Kiesel, Oliver Schmidt
  • Patent number: 5999080
    Abstract: A frequency dependent resistor in which the length of the current path across the resistor varies as a function of the frequency of the electrical signals being passed therethrough. The resistor uses the principal known as skin effect to direct relatively higher frequency signals through a longer path through the resistor than is experienced by signals having a relatively low frequency.
    Type: Grant
    Filed: February 9, 1999
    Date of Patent: December 7, 1999
    Assignee: Intersil Corporation
    Inventor: James P. Furino, Jr.