Abstract: A device for measuring a strain of an object independently of temperature variations includes: at least one strain gauge that is attachable directly or indirectly to the object whose strain is to be measured; a first temperature sensor for measuring a temperature of the at least one strain gauge; read-out electronics for measuring a change of electrical resistance of the at least one strain gauge as a measured electrical resistance change, the read-out electronics including at least one fixed resistor whose value is relied upon when obtaining a value of the change of electrical resistance of the strain gauge as a result of the measurement, the read-out electronics being such that a temperature of the at least one fixed resistor is known and/or obtainable by measurement; and an evaluation unit for: correcting the measured electrical resistance change, and/or a strain of the strain gauge and/or the strain of the object.

Abstract: Method of controlling an active filtering device comprising an active filter and a filter controller arranged to control the active filter, the method comprising: a wearer location providing step, during which a location of a wearer is provided, a luminous cartography providing step, during which a luminous cartography relating to the light sources in the environment of the wearer is provided, the luminous cartography depending at least on the location of the wearer, a light exposure profile determining step, during which at least one part of the light exposure profile of the wearer is determined based at least on the luminous cartography and on the wearer location, and an active filter controlling step, during which the active filter is controlled by the filter controller according to the determined light exposure profile of the wearer.

Abstract: A composite resistor includes a thin film resistor element having a first temperature coefficient of resistance and a metal resistor element having a second temperature coefficient of resistance. A portion of the metal resistor element overlaps a portion of the thin film resistor element such that the portion of the metal resistor element is in thermal communication with the portion of the thin film resistor element to compensate for a resistance drift arising during operation of the composite resistor.

Abstract: A composite resistor includes a thin film resistor element having a first temperature coefficient of resistance and a metal resistor element having a second temperature coefficient of resistance. A portion of the metal resistor element overlaps a portion of the thin film resistor element such that the portion of the metal resistor element is in thermal communication with the portion of the thin film resistor element to compensate for a resistance drift arising during operation of the composite resistor.

Abstract: A composite resistor includes a thin film resistor element having a first temperature coefficient of resistance and a metal resistor element having a second temperature coefficient of resistance. A portion of the metal resistor element overlaps a portion of the thin film resistor element such that the portion of the metal resistor element is in thermal communication with the portion of the thin film resistor element to compensate for a resistance drift arising during operation of the composite resistor.

Abstract: An embodiment of a resistor formed by at least one first portion and one second portion, electrically coupled to one another and with different crystalline phases. The first portion has a positive temperature coefficient, and the second portion has a negative temperature coefficient. The first portion has a first resistivity, and the second portion has a second resistivity, and the portions are coupled so that the resistor has an overall temperature coefficient that is approximately zero.

Abstract: An embodiment of a resistor formed by at least one first portion and one second portion, electrically connected to one another and with different crystalline phases. The first portion has a positive temperature coefficient, and the second portion has a negative temperature coefficient. The first portion has a first resistivity, and the second portion has a second resistivity, and the portions are connected so that the resistor has an overall temperature coefficient that is approximately zero.

Abstract: The present disclosure is directed to a thin film resistor having a first resistor layer having a first temperature coefficient of resistance and a second resistor layer on the first resistor layer, the second resistor layer having a second temperature coefficient of resistance different from the first temperature coefficient of resistance. The first temperature coefficient of resistance may be positive while the second temperature coefficient of resistance is negative. The first resistor layer may have a thickness in the range of 50 and 150 angstroms and the second resistor layer may have a thickness in the range of 20 and 50 angstroms.

Abstract: One example of the present subject matter includes a first elongate section having a first flexible conductor enveloped by a first jacket; a second elongate section having a second flexible conductor enveloped by a second jacket; and an sensor section having an elongate flexible tubular shape, the sensor section housing a resistance temperature detector element which is at least partially coiled and which is resistance welded to the first flexible conductor at a first weld and to the second flexible conductor at a second weld; wherein the sensor section at least partially envelops and overlaps the first elongate section and the second elongate section, with a first band crimping the sensor section to the first elongate section, and a second band crimping the sensor section to the second elongate section, and with the first and second welds disposed between the first and second bands.

Abstract: A compound resistor is used to compensate for trimming induced shift in temperature coefficient of resistance of a trimmable resistor. The compound resistor is composed of a first and second portion, at least one of the two portions being thermally trimmable, and the parameters for the first and second portion are selected such that the trimming induced shift can be minimized on an overall resistance and temperature coefficient of resistance of the compound resistors by trimming the trimmable resistor. The invention also allows for exploring trimming range available via true thermal trimming without actually trimming out resistor's value of a resistor. The invention also allows design of thermal isolation to minimize or optimize resistance variation of the overall compound resistance.

Abstract: An integrated circuit structure including multiple thin film resistors having different sheet resistances and TCRs includes a first oxide layer (2) formed on a semiconductor substrate (1), a first thin film resistor (3) disposed on the first oxide layer (2), and a second oxide layer (14) disposed over the first oxide layer (2) and first thin film resistor (3). A second thin film resistor (15) is formed on the second oxide layer (14) and a third oxide layer (16) is formed over the second thin film resistor (15) and the second oxide layer (14). Interconnect metallization elements (12A,B & 22A,B) disposed on at least one of the second (14) and third (16) oxide layers electrically contact the circuit element (4), terminals of the first thin film resistor (3), and terminals of the second thin film resistor (15), respectively, through corresponding contact openings through at least one of the second (14) and third (16) oxide layers.

Abstract: A resistor unit is adapted for use in a constant current source circuit or a temperature compensating circuit for providing temperature compensation to a constant voltage reference circuit. The resistor unit includes at least one first resistor, and at least one second resistor coupled to the first resistor. One of the first and second resistors is a positive temperature coefficient resistor. The other one of the first and second resistors is a negative temperature coefficient resistor. Because a temperature characteristic of the first resistor is opposite to that of the second resistor, an effective resistance of the resistor unit changes in a relatively narrower range with temperature.

Abstract: In one aspect, a negative voltage coefficient resistor is provided. The negative voltage coefficient resistor includes an insulative layer positioned between a polycrystalline silicon resistive layer and a silicide layer. Upon application of an appropriate voltage bias at the silicide layer of the resistor, a tunneling current is established across the insulative layer and is supplied to the polycrystalline silicon resistive layer. The tunneling current limits the current flow through the polycrystalline silicon layer, producing a resistor having a negative voltage coefficient of resistance and a reduced temperature coefficient of resistance.

Abstract: A resistor having a uniform resistance, in which a serial resistance of resistors with different resistance temperature coefficients is not influenced by change in temperature, and a semiconductor device using the same includes: a first resistor having a first width and a first length and having a negative resistance temperature coefficient; and a second resistor serially connected to the first resistor, the second resistor having a positive resistance temperature coefficient, wherein the second resistor has a second width and a second length of different dimensions to satisfy a following Equation x=?(Tp×Rp)/Ta×Ra, where Tp and Ta are the respective resistance temperature coefficients of the first and the second resistors, and Rp and Ra are the respective sheet resistances of the first and the second resistors.

Abstract: An integrated circuit structure including multiple thin film resistors having different sheet resistances and TCRs includes a first oxide layer (2) formed on a semiconductor substrate (1), a first thin film resistor (3) disposed on the first oxide layer (2), and a second oxide layer (14) disposed over the first oxide layer (2) and first thin film resistor (3). A second thin film resistor (15) is formed on the second oxide layer (14) and a third oxide layer (16) is formed over the second thin film resistor (15) and the second oxide layer (14). Interconnect metallization elements (12A,B & 22A,B) disposed on at least one of the second (14) and third (16) oxide layers electrically contact the circuit element (4), terminals of the first thin film resistor (3), and terminals of the second thin film resistor (15), respectively, through corresponding contact openings through at least one of the second (14) and third (16) oxide layers.

Abstract: The electric device (1, 100) has a body (2, 102) having a resistor (7, 107) comprising a phase change material being changeable between a first phase and a second phase. The resistor (7, 107) has a first electrical resistance when the phase change material is in the first phase and a second electrical resistance, different from the first electrical resistance, when the phase change material is in the second phase. The body (2, 102) further has a heating element (6, 106) being able to conduct a current for enabling a transition from the first phase to the second phase. The heating element (6, 106) is arranged in parallel with the resistor (7, 107).

Abstract: A method for forming a temperature-compensated resistor on a semiconductor substrate is provided. A resistor element is formed on the semiconductor substrate. Terminal contacts are formed on the ends of the resistor element. A temperature-compensating configuration is formed, and is selected from an enlarged transverse portion in the resistor element intermediate and spaced from the terminal contacts, and at least one contact pattern along and in contact with the resistor element intermediate and spaced from the terminal contacts.

Abstract: A high precision power resistor having the improved property of reduced resistance change due to power is disclosed. The resistor includes a substrate having first and second flat surfaces and having a shape and a composition; a resistive foil having a low TCR of about 0.1 to about 1 ppm/° C. and a thickness of about 0.03 mils to about 0.7 mils cemented to one of the flat surfaces with a cement, the resistive foil having a pattern to produce a desired resistance value, the substrate having a modulus of elasticity of about 10×106 psi to about 100×106 psi and a thickness of about 0.5 mils to about 200 mils, the resistive foil, pattern, type and thickness of cement, and substrate being selected to provide a cumulative effect of reduction of resistance change due to power.

Abstract: Disclosed herein are methods and systems for sensing and controlling the temperature of a resistive element configured for use in a read/write head of a magnetic data storage device. In one embodiment, a method includes detecting a voltage across the resistive element, where the voltage varies as a function of a temperature of the resistive element. The method also includes comparing the voltage to a predetermined value to determine a variation of the voltage from the predetermined value, and then altering a power applied to the resistive element based on the variation. In this exemplary embodiment, the temperature of the resistive element is then controlled as a function of the altered applied power.

Abstract: A rotating contact supporting shaft for a low-voltage power circuit breaker, whose particularity consists of the fact that it has a modular structure that comprises, along the rotation axis, at least one first and one second supporting module (10, 20), each module being functionally coupled to at least one corresponding moving contact (3) of the circuit breaker and being provided respectively with first and second means (22) for connection to at least one first interconnection module (30); the first interconnection module is interposed between the first and second supporting modules and is provided with third and fourth connection means (31) that are suitable to be coupled respectively to the first and second connection means; the coupling between the first and third connection means and between the second and fourth connection means allows the functional connection between the first and second supporting modules and the direct structural connection of the interconnection module to the first and second suppor

Abstract: A resistor having a desired temperature coefficient of resistance and a total electrical resistance. A first resistor segment has a first temperature coefficient of resistance and a first electrical resistance. A second resistor segment has a second temperature coefficient of resistance and a second electrical resistance. The first resistor segment is electrically connected in series with the second resistor segment, and the total electrical resistance equals a sum of the first electrical resistance and the second electrical resistance. The desired temperature coefficient of resistance is determined at least in part by the first temperature coefficient of resistance and the first electrical resistance of the first resistor and the second temperature coefficient of resistance and the second electrical resistance of the second resistor.

Abstract: A method for manufacturing a thin film negative temperature coefficient thermistor is disclosed. The method includes selecting a negative temperature coefficient of resistance versus temperature curve, selecting a mixture of metal film materials to provide the negative temperature coefficient of resistance curve while maintaining a desired physical size, and depositing the mixture of metal film materials on a substrate.

Abstract: A thin film resistor that has a substantially zero TCR is provided as well as a method for fabricating the same. The thin film resistor includes at least two resistor materials located over one another. Each resistor material has a different temperature coefficient of resistivity such that the effective temperature coefficient of resistivity of the thin film resistor is substantially 0 ppm/° C. The thin film resistor may be integrated into a interconnect structure or it may be integrated with a metal-insulator-metal capacitor (MIMCAP).

Abstract: A high precision power resistor having the improved property of reduced resistance change due to power is disclosed. The resistor includes a substrate having first and second flat surfaces and having a shape and a composition; a resistive foil having a low TCR of about 0.1 to about 1 ppm/° C. and a thickness of about 0.03 mils to about 0.7 mils cemented to one of the flat surfaces with a cement, the resistive foil having a pattern to produce a desired resistance value, the substrate having a modulus of elasticity of about 10×106 psi to about 100×106 psi and a thickness of about 0.5 mils to about 200 mils, the resistive foil, pattern, type and thickness of cement, and substrate being selected to provide a cumulative effect of reduction of resistance change due to power.

Abstract: A dielectrically isolated temperature compensated pressure transducer including: a wafer including a deflectable diaphragm formed therein, the diaphragm being capable of deflecting in response to an applied pressure, and the diaphragm defining an active region surrounded by an inactive region of the wafer; a plurality of dielectrically isolated piezoresistive elements formed on the active region of the wafer and coupled together to form a Wheatstone bridge configuration so as to cooperatively provide an output signal in response to and indicative of an amount of deflection of the diaphragm, the plurality of piezoresistive elements being undesirably operative to introduce an undesirable error into the output according to exposure of the wafer to an environmental condition; and, a dielectrically isolated resistor formed on the inactive region of the wafer and electrically coupled in series to the plurality of piezoresistive elements so as to at least partially compensate for the undesirable error.

Abstract: A temperature-compensated semiconductor resistor includes two series-connected semiconductor resistance elements having mutually inverse resistive temperature-dependent responses in a temperature range of interest. The semiconductor resistance elements are preferably made of doped polycrystalline semiconductor material such as polycrystalline silicon that is oppositely doped, i.e. n-doped and p-doped, respectively. A semiconductor integrated circuit, in particular a CMOS circuit, containing a semiconductor resistor, is also provided.

Abstract: This invention relates to a voltage regulated circuit, more particularly, to a voltage regulated circuit with a well resistor divider. The present invention applies two well resistors act as the voltage regulated circuit and uses the characteristic of the well resistor in the resistance value, which is increased following the voltage that is transmitted to the well resistor to make an output voltage become a stable value. When the input voltage is an instable and over-high value, the depletion region in the well resistor will extend to absorb the over-high voltage value and make the output voltage to become a stable voltage value.

Abstract: This invention relates to a voltage regulated circuit, more particularly, to a voltage regulated circuit with a well resistor divider. The present invention applies two well resistors act as the voltage regulated circuit and uses the characteristic of the well resistor in the resistance value, which is increased following the voltage that is transmitted to the well resistor to make an output voltage become a stable value. When the input voltage is an instable and over-high value, the depletion region in the well resistor will extend to absorb the over-high voltage value and make the output voltage to become a stable voltage value.

Abstract: A resistor having a desired temperature coefficient of resistance and a total electrical resistance. A first resistor segment has a first temperature coefficient of resistance and a first electrical resistance. A second resistor segment has a second temperature coefficient of resistance and a second electrical resistance. The first resistor segment is electrically connected in series with the second resistor segment, and the total electrical resistance equals a sum of the first electrical resistance and the second electrical resistance. The desired temperature coefficient of resistance is determined at least in part by the first temperature coefficient of resistance and the first electrical resistance of the first resistor and the second temperature coefficient of resistance and the second electrical resistance of the second resistor.

Abstract: To compensate for temperature dependent variations and process variations in surface resistance of a main resistor (R1) on a chip (1), one or more compensating resistors (R11, R12. . . R1n) can be connected in series with the first resistor (R1) via normally open switches (SR11, SR12. . . SR1n). The switches are closed to connect one or more of the compensating resistors (R11, R12. . . SR1n) in series with the main resistor (R1) in response to whether the voltage across resistors (R21, R22. . . R2n) produced on the chip (1) in the same process and proportional to the compensating resistors (R11, R12. . . R1n) is higher or lower than a fixed reference voltage (VR3).

Abstract: With a sensor and method, it is possible for platinum resistor elements to be used advantageously as heating elements, temperature sensors, printed circuit traces, or as chemically resistant electron beam sensitive layers. To ensure a long-lasting adhesion of the platinum resistance layer to a dielectric substrate, even during exposure to temperatures which are elevated over ambient temperature and under dry and most atmospheric conditions, a thin adhesion layer of platinum silicide, for example, is deposited between the platinum resistance layer and the dielectric substrate. Resistor elements patterned from the platinum layer can advantageously be used in temperature sensors, mass flow sensors, chemical sensors, gas sensors, or humidity sensors.

Abstract: An integrated circuit containing a resistor and the resistor per se. The circuit includes a substrate (2) , a semiconductor resistor (3) on the substrate and a layer of electrically insulating material (5) disposed over the substrate and the semiconductor resistor having at least one contact (11, 13, 15) extending therethrough to the semiconductor resistor, the contact having an electrical path therein extending to and forming an interface with an end portion of the semiconductor resistor. The semiconductor resistor has a semiconductor resistor body, preferably of doped polysilicon, having one of a positive or negative temperature coefficient of resistance and a resistor head. The resistor head consists essentially of the electrical path which is metal interconnect, the contacts and then interface to and from the resistor body and in contact with the resistor body, the resistor head having the other of a positive or negative temperature coefficient of resistance.

Abstract: An integrated circuit containing a resistor and the resistor per se. The circuit includes a substrate (2), a semiconductor resistor (3) on the substrate and a layer of electrically insulating material (5) disposed over the substrate and the semiconductor resistor having at least one contact (11, 13, 15) extending therethrough to the semiconductor resistor, the contact having an electrical path therein extending to and forming an interface with an end portion of the semiconductor resistor. The semiconductor resistor has a semiconductor resistor body, preferably of doped polysilicon, having one of a positive or negative temperature coefficient of resistance and a resistor head. The resistor head consists essentially of the electrical path which is metal interconnect, the contacts and then interface to and from the resistor body and in contact with the resistor body, the resistor head having the other of a positive or negative temperature coefficient of resistance.

Abstract: Current limiters, preferably PTC resistors, are used for limiting short-circuit current when connected in series to capacitors and converter valves. Protective devices operating with these PTC resistors are able to work reversibly and respond without arcing. They have a low inductance and can be used in space-saving designs. Protective circuits with such PTC resistors have a low loss, are shake-proof, and can be integrated into an existing cooling circuit. They respond autonomously and enable a flexible application. The PTC resistors preferably are constructed in a meander shape of porous metal foam or a metal braid or fabric and have electrical contact bridges between their resistor tracks. At least 2 resistor tracks that are electrically connected in parallel are arranged at a small distance on top of each other in such a way that partial currents (I1, I2) flow in opposite directions through resistor branches in superposed track areas formed in this manner.

Abstract: A heating element, preferably for oblong plate-shaped sensors for measuring oxygen concentration in internal combustion engine exhaust gas, has a conductive heating strip at one end of the heating element and electrical conductors which are connected electrically to the conductive heating strip and which supply the heating current and provide connection to the other end of the heating element. The positive temperature coefficient of the resistor material of the conductive heating strip is lower than the positive temperature coefficient of the material of at least one section of the conductors.

Abstract: A description is given of a precision resistor. The resistor comprises a substrate having two connections which are electrically interconnected via a resistance path, said resistance path comprising a first path portion having a positive TCR and a second path portion having a negative TCR. The resistor is characterized in that the resistance material of both path portions is selected so that the resistance values and the absolute TCRs of both path portions are comparable and in that both path portions are trimmed so that the resistor has desired resistance and TCR values. Preferably, the resistance materials used for the path portions consist of an alloy of substantially the same composition on the basis of CuNi or NiCrAl. The invention makes it possible to very accurately and reproducibly mass-produce precision resistors.

Abstract: According to the present invention, there is provided a metal oxide film resistor which has an insulating substrate, a metal oxide resistive film having at least a metal oxide film having a positive temperature coefficient of resistance and/or a metal oxide film having a negative temperature coefficient of resistance, and/or a metal oxide insulating film. The metal oxide film resistor is not affected by moisture or alkali ions in the insulating substrate. The resistance of the film itself does not change. The metal oxide film resistor is extremely reliable.

Abstract: A monolithic integrated circuit power sensor provides a monolithic integrated circuit substrate a conversion element formed either on or in the substrate for converting microwave energy into heat, an electrically insulating dielectric layer affixed to the conversion element, and an integrated circuit, heat sensitive element formed in sufficiently close proximity to the conversion element to be thermally coupled thereto through the dielectric layer for sensing temperature changes in the conversion element.

Abstract: An oil leakage detection device is provided having a detection unit comprising: (a) an oil leakage detecting sensor which exhibits a positive resistance-temperature characteristic in response to changes in temperature, connected, in series, to (b) an oil leakage detecting sensor which exhibits a negative resistance-temperature characteristic in response to changes in temperature.

Abstract: A temperature compensation scheme for a piezoresistive pressure sensor utilizing resistors with carefully chosen temperature coefficients of resistivity to provide a totally passive network.

Abstract: Sensor with polycrystalline silicon resistors which are applied to a substrate and are covered with a dielectric passivating layer, characterized by the feature that the resistors are thermally adapted by targeted adjustment of their dopings and by suitable healing, and are balanced by laser trimming.

Abstract: A heating element comprises a resistor comprising a plurality of fine particles or thin films having a negative temperature coefficient of electrical resistance, and highly resistant region layers interposed between the fine particles or thin films, at least two separate electrodes arranged in contact with different particles or layers of the resistor, and means for applying across said electrodes an AC electric voltage, said means operable at AC frequencies which are not lower than a frequency whose complex impedance characteristics which when graphed in the manner shown in FIG. 4 hereof correspond to point B of said graphed complex impedance characteristics. This heating element has the following merits that it can be formed into an optional shape, is low in the power consumption, can be rapidly heated, has temperature self-adjusting performance and temperature detecting performance and is excellent in the durability.

Abstract: A temperature compensation circuit for strain gauges fixed to an object to be measured and adapted to take out an output conforming to a strain by being fed with a constant voltage, wherein a compensation resistors in the form of a combination of two or more kinds of resistors each made of a pure single metal material having a resistance versus temperature characteristic equivalent to the output voltage versus temperature characteristic of the bridge circuit of strain gauges are inserted and connected at a predetermined position on the voltage supply side or output take-out side of the bridge circuit of strain gauges thereby compensating for variations in the strain gauge output due to temperature variations with high accuracy. The temperature compensation circuit for strain gauges according to the present invention not only has very high accuracy of temperature compensation but also can be produced with high yield.

Abstract: A fluid leakage detecting element comprises a heat generating resistive member and a temperature compensating resistive member disposed on a substrate. Each of the resistive members is prepared in the form of a paste of a metal which has a high temperature coefficient and a high thermal conductivity and whose melting point is higher than the baking temperature of the substrate. These resistive members are printed in thick film form on the substrate which is sufficiently electrical insulating and has a high thermal conductivity.

Abstract: Improved structure for measuring the air flow in large conduits, such as those used to supply air conditioning and heating ducts, by sampling substantially all of the cross sectional area of the conduit in a given transverse plane to obtain an average electrical signal which is compared with a reference signal to obtain a measured voltage corresponding to average flow.

Abstract: To form a temperature sensor, for example suitable in an automotive vehicle, to determine ambient temperatures, or to provide a temperature compensated thin-film circuit, for example for incorporation with an oscillator circuit, two stable thin-film layers are applied to a non-conductive substrate, the layers being capable of being etched.

Abstract: A transducer operating on the strain gauge principle having integral temperature compensation and calibration resistors is disclosed. In the presently preferred embodiment, a silicon dioxide layer is disposed on a silicon substrate. Platinum alloy strain gauge resistors are disposed on the silicon dioxide layer and form a Wheatstone bridge circuit configuration. Laser trimable chromium nitride, platinum alloy and gold temperature compensation and calibration resistors are formed on the silicon dioxide layer from the same films used to form the strain gauge, adhesion layers, conductors and bonding pads, to permit the transducer to be calibrated such that its electrical characteristics are in conformance to specified tolerances when the transducer is subjected to temperature variations.

Abstract: A thin film resistor having a controlled temperature coefficient of resistance (TCR) ranging from negative to positive degrees kelvin and having relatively high resistivity. The resistor is a multilayer superlattice crystal containing a plurality of alternating, ultra-thin layers of two different metals. TCR is varied by controlling the thickness of the individual layers. The resistor can be readily prepared by methods compatible with thin film circuitry manufacturing techniques.

Abstract: A first thin-film resistor member, preferably TaN, is disposed over a sec thin film member, such as NiCr, to completely cover the second member and act as a passivating layer preventing anodization of the second. The thin-film materials used for the first and second members have substantially an equal thin-film, sheet-resistance, resistance value per square (.OMEGA..quadrature.), with the first material being trimmable for this purpose. Also, the TCR (temperature coefficient of expansion) of the first material is negative while that of the second is positive. These members are coupled in parallel with substantially equal lengths but with differing widths which permit the first to completely cover the second. The arrangement permits the TCR of the parallel circuit to be brought substantially to a zero value and, in any event, a value no greater than .+-. 50 ppm/.degree. C.

Abstract: A precision sensistor structure is disclosed for use in a monolithic integrated circuit.