Abstract: An optical element for an optical system, in particular an optical system of a microlithographic projection exposure apparatus or mask inspection apparatus, and a method for correcting the wavefront effect of an optical element. The optical element has at least one correction layer (12, 22) and a manipulator that manipulates the layer stress in this correction layer such that a wavefront aberration present in the optical system is at least partially corrected by this manipulation. The manipulator has a radiation source for spatially resolved irradiation of the correction layer with electromagnetic radiation (5). This spatially resolved irradiation enables a plurality of spaced apart regions (12a, 12b, 12c, . . . ; 22a, 22b, 22c, . . . ) to be generated, equally modified in terms of their respective structures, in the correction layer.

Abstract: A laser projection unit, a depth camera and an electronic device are provided. The laser projection unit includes a light source, a collimation element and a diffractive optical element. The light source is configured to emit laser. The collimation element is configured to collimate the laser. The collimation element includes one or a plurality of lenses provided in a light emitting path of the light source. The diffractive optical element is configured to diffract the laser collimated by the diffractive collimation element to form a laser pattern.

Abstract: An illumination optical system includes a first spatial light modulator having a plurality of optical elements into which the light from the light source comes, a polarizing member having a first polarizing element into which a first light of a light from the first spatial light modulator comes and a second polarizing element into which a second light of the light from the first spatial light modulator comes, so as to allow the first light traveled via the first polarizing element and the second light traveled via the second polarizing element to have polarizing states different from each other, the first and second lights traveling through positions relative to an optical axis of the illumination optical system different from each other, and a second spatial light modulator having a plurality of optical elements into which the first and second lights from the polarizing member come.

Abstract: An imaging optical unit for projection lithography has a plurality of mirrors for guiding imaging light from an object field into an image field. The object field is spanned by a first, larger object field dimension and along a second, smaller object field dimension. The imaging optical unit has at least two GI mirrors and at least one NI mirror. The NI mirror is arranged between two GI mirrors in the imaging light beam path. A used reflection surface of the NI mirror has an aspect ratio between a surface dimension along a first reflection surface coordinate and a surface dimension along a second reflection coordinate parallel to the second object field dimension. The aspect ratio being less than 4.5. An imaging optical unit with reduced production costs emerges.

Abstract: An optical projection unit includes first and second optical element modules. The first optical element module includes a first housing unit and a first optical element received within the first housing unit and having an optically used first region defining a first optical axis. The second optical element module is located adjacent to the first optical element module and includes a second optical element which defines a second optical axis of the optical projection unit. The first housing unit has a central first housing axis and an outer wall extending in a circumferential direction about the first housing axis. The first optical axis is laterally offset and/or inclined with respect to the first housing axis. The first housing axis is substantially collinear with the second optical axis.

Abstract: A mirror (13) for use e.g. in an EUV lithography apparatus or an EUV mask metrology system, with: a substrate (15) and a coating (16) reflective to EUV radiation (6), the reflective coating having a capping layer (18) composed of an oxynitride, in particular composed of SiNxOY, wherein a nitrogen proportion x in the oxynitride NxOY is between 0.4 and 1.4. Also provided are an EUV lithography apparatus having at least one such EUV mirror (13) and a method for operating such an EUV lithography apparatus.

Abstract: An illumination optical unit for a projection exposure apparatus serves for guiding illumination light toward an illumination field, in which a lithography mask can be arranged. A first facet mirror has a plurality of individual mirrors that provide illumination channels for guiding illumination light partial beams toward the illumination field. The individual mirrors each bear a multilayer reflective coating. A second facet mirror is disposed downstream of the first facet mirror in the beam path of the illumination light. A respective facet of the second facet mirror with at least one of the individual mirrors of the first facet mirror completes the illumination channel for guiding the illumination light partial beam toward the illumination field.

Abstract: A system of an extreme ultraviolet lithography (EUVL) is disclosed. an extreme ultraviolet lithography (EUVL) system includes an extreme ultraviolet (EUV) reflection-type mask having a patterned flare-suppressing-by-phase-shifting (FSbPhS) layer disposed over a patterned absorption layer. The system also includes a radiation to expose the EUV mask and a projection optics box (POB) to collect and direct the radiation that reflects from the EUV mask to expose a target.

Abstract: A lithographic apparatus includes a support to support a patterning device, the patterning device being capable of imparting a radiation beam with a pattern in its cross-section to form a patterned radiation beam, a substrate table constructed to hold a substrate, and a projection system configured to project the patterned radiation beam onto a target portion of the substrate. The lithographic apparatus includes a projection transfer measurement system to measure an optical projection transfer information of the projection system. The projection transfer measurement arrangement includes: an optical device to direct a measurement beam into the projection system during a scanning movement, a detector to detect the measurement beam having passed through the projection system during the scanning movement, and a measurement processor to determine the optical projection transfer information from the detected measurement beam.

Abstract: An imaging optical unit (7) serves for imaging an object field (4) in an object plane (5) into an image field (8) in an image plane (9). The imaging optical unit (7) has a plurality of components (M1 to M6, GI) which guide imaging light (3). The imaging optical unit (7) is embodied as a pupil-obscured system. The imaging optical unit (7) has at least one mirror (GI) for grazing incidence of the imaging light (3). The result is an imaging optical unit having a handleable combination of low imaging aberrations and compact construction.

Abstract: A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective has a first, refractive objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part including at least one concave mirror for imaging the first Intermediate imaging into a second intermediate image; and a third, refractive objective part for imaging the second intermediate imaging onto the image plane; wherein the projection objective has a maximum lens diameter Dmax, a maximum image field height Y?, and an image side numerical aperture NA; wherein COMP1=Dmax/(Y?·NA2) and wherein the condition COMP1<10 holds.

Abstract: A lithography method is proposed employing a projection exposure system having a catoptric imaging optics comprising a mirror formed as phase mask in the imaging beam path, wherein the mirror formed as phase mask exhibits continuous regions having dielectric layers provided thereon. Optionally, the regions of the mirror formed as phase mask are configured such that an axial extension of an image of a point (DOF) of the imaging is increased or/and a lateral extension of an image of a point of the imaging is decreased. Preferably multiple exposures of a same radiation sensitive substrate are performed in order to achieve an increase in resolution and scaling down of the manufacturing trace structures (61, 61?), respectively.

Abstract: A projection objective, such as for EUV lithography, for imaging a pattern arranged in an object plane into an image plane with the aid of electromagnetic radiation from the extreme ultraviolet range is provided. The projection objective includes a plurality of mirrors provided with reflective coatings and arranged between the object plane and the image plane. At least one of the mirrors includes a graded reflective coating with a rotationally-asymmetric coating thickness profile in the mirror plane on a substrate with a rotationally-asymmetric or rotationally-symmetric surface profile. The projection objective can exhibit increased overall transmission.

Abstract: The present disclosure provides an extreme ultraviolet lithography system. The extreme ultraviolet lithography system includes a projection optics system to image a pattern of a mask on a wafer. The projection optics system includes between two to five mirrors. The two to five mirrors are designed and configured to have a numerical aperture less than about 0.50, an image field size at the wafer hat is greater than or equal to about 20 mm, and a pupil plane that includes central obscuration. In an example, the central obscuration has a radius that is less than or equal to 50% of a radius of the pupil plane. In an example, the central obscuration has an area that is less than or equal to 25% of an area of the pupil plane.

Abstract: An optical apparatus has a moveable reflective element and associated actuator. The actuator includes a first magnet which is connected to the moveable reflective element such that movement of the first magnet will cause the moveable reflective element to move, and a second magnet which is connected to a motor such that operation of the motor will cause the second magnet to move. The second magnet is positioned relative to the first magnet such that moving the second magnet will cause the first magnet to move.

Abstract: A method for producing a capping layer (18) composed of silicon oxide SiOx on a coating (16) of a mirror (13), the coating reflecting EUV radiation (6) e.g. for use in an EUV lithography apparatus or in an EUV mask metrology system. The method includes irradiating a capping layer (18) composed of silicon nitride SiNx or composed of silicon oxynitride SiNxOy for converting the silicon nitride SiNx or the silicon oxynitride SiNxOy of the capping layer (18) into silicon oxide SiOx. An associated mirror (13) includes a capping layer comprised of silicon oxide SiOx, and can be provided in an associated EUV lithography apparatus.

Abstract: A mirror (13) for use e.g. in an EUV lithography apparatus or an EUV mask metrology system, with: a substrate (15) and a coating (16) reflective to EUV radiation (6), the reflective coating having a capping layer (18) composed of an oxynitride, in particular composed of SiNxOY, wherein a nitrogen proportion x in the oxynitride NxOY is between 0.4 and 1.4. Also provided are an EUV lithography apparatus having at least one such EUV mirror (13) and a method for operating such an EUV lithography apparatus.

Abstract: An exposure apparatus includes a stage 10 for holding a substrate 8 to be exposed; a direct writing mask 6 arranged above the substrate 8 to be exposed held by the stage 10; a repeated opening pattern in which a plurality of openings each having approximately the same size are arranged in a line at approximately the same interval, provided to the mask; an irradiation mechanism for irradiating with a linear laser beam 1c along the repeated opening pattern; and a movement mechanism for moving a relative position of a laser beam which is formed in such a way that the linear laser beam formed by the laser processing mechanism passes through the plurality of openings of the opening pattern and the substrate held by the stage.

Abstract: There is provided an optical module for an objective. The optical module includes (a) a first holding device with an inner circumference, which extends in a first circumferential direction, (b) at least one first supporting device for supporting a first optical element and being fixed at said inner circumference of said first holding device, (c) an annular circumferential first assembly space being defined by displacing said first supporting device once in a revolving manner along said first circumferential direction, (d) at least one second supporting device being provided for supporting a second optical element and being fixed at said inner circumference of said first holding device, and (e) an annular circumferential second assembly space being defined by displacing said second supporting device once in a revolving manner along said first circumferential direction. The first assembly space intersects the second assembly space.

Abstract: New and useful concepts for an imaging optical system configured to simultaneously image a reticle to a pair of imaging locations are provided, where the imaging optics comprise a pair of arms, each of which includes catadioptric imaging optics. In addition, the imaging optics are preferably designed to image a reticle simultaneously to the pair of imaging locations, at a numerical aperture of at least 1.3, and without obscuration of light by the imaging optics.

Abstract: A method for correcting at least one image defect of a projection objective of a lithography projection exposure machine, the projection objective comprising an optical arrangement composed of a plurality of lenses and at least one mirror, the at least one mirror having an optically operative surface that can be defective and is thus responsible for the at least one image defect, comprises the steps of: at least approximately determining a ratio VM of principal ray height hMH to marginal ray height hMR at the optically operative surface of the at least one mirror, at least approximately determining at least one optically operative lens surface among the lens surfaces of the lenses, at which the magnitude of a ratio VL of principal ray height hLH to marginal ray height hLR comes at least closest to the ratio VM, and selecting the at least one determined lens surface for the correction of the image defect.

Abstract: It is disclosed a mask on which a pattern for transfer is formed. The mask comprising a first row pattern part and a second row pattern part which are arranged along a first direction on the mask. The whole region of the first row pattern part and the whole region of the second row pattern part region are arranged to deviate from each other by a predetermined amount in a second direction perpendicular to the first direction.

Abstract: A system and method are provided for writing patterns onto substrates. First and second beams of extreme ultraviolet (EUV) radiation are produced. An exposure unit is used to project the first and second beams of EUV radiation onto a substrate. The first and second beams of radiation interfere with each other to expose a first set of parallel lines at an exposure field of the substrate.

Abstract: The invention relates to a microlithography projection lens for wavelengths <=248 nm <=, preferably <=193 mm, in particular EUV lithography for wavelengths ranging from 1-30 nm for imaging an object field in an object plane onto an image field in an image plane, the microlithography projection lens developed in such a manner that provision is made for an accessible diaphragm plane, into which for instance an iris diaphragm can be introduced.

Abstract: An imaging optical system has a plurality of mirrors, which via a beam path for imaging light, image an object field in an object plane into an image field in an image plane. The imaging optical system has an exit pupil obscuration. At least one of the mirrors has no opening for passage of the imaging light. The fourth to last mirror in the beam path is concave, resulting in an imaging optical system having improved imaging properties without compromise in throughput.

Abstract: For the use in illumination systems and projection exposure apparatuses for UV or EUV lithography, a reflective optical element is provided for a operating wavelength in the ultraviolet to extreme ultraviolet wavelength ranges. The reflective optical element includes a substrate and a reflective surface on the substrate. The multilayer system has layers of at least two alternating materials having different real parts of the refractive index at the operating wavelength. Radiation in the operating wavelength of a certain incident angle bandwidth distribution can impinge on the reflective optical element. The reflective surface includes one or more first portions, in which the layers have alternating materials of a first period thickness. The reflective surface includes one or more additional portions, in which the layers of alternating materials have a first period thickness and at least one additional period thickness.

Abstract: A projection objective includes at least four curved mirrors, which include a first curved mirror that is a most optically forward mirror and a second curved mirror that is a second most optically forward mirror, as defined along a light path. In addition, an intermediate lens element is disposed physically between the first and second mirrors, the intermediate lens element being a single pass type lens. The objective forms an image with a numerical aperture of at least substantially 1.0 in immersion.

Abstract: There is provided is an optical member-holding apparatus which can hold a plurality of optical members of two different optical systems, even when the optical members exist in a common barrel in a mixed manner, such that the relative positions between the optical members can be easily adjusted; and which holds a mirror in a projection optical system and a mirror in an illumination optical system and includes a barrel unit, an inner ring holding the mirror, a holding member holding the mirror, a support plate attached to the barrel unit, and a holding-supporting mechanism attached to the support plate and adjusting the relative position of the mirror to the mirror.

Abstract: An imaging optical system includes a plurality of mirrors that image an object field in an object plane into an image field in an image plane. At least one of the mirrors is obscured, and thus has a opening for imaging light to pass through. The fourth-last mirror in the light path before the image field is not obscured and provides, with an outer edge of the optically effective reflection surface thereof, a central shadowing in a pupil plane of the imaging optical system. The distance between the fourth-last mirror and the last mirror along the optical axis is at least 10% of the distance between the object field and the image field. An intermediate image, which is closest to the image plane, is arranged between the last mirror and the image plane. The imaging optical system can have a numerical aperture of 0.9. These measures, not all of which must be effected simultaneously, lead to an imaging optical system with improved imaging properties and/or reduced production costs.

Abstract: An exposure apparatus projects a pattern of an original onto a substrate by a projection optical system to expose the substrate, wherein the projection optical system includes a mirror assembly, and the mirror assembly includes a first mirror member which has a first reflecting surface and is configured to bend an optical axis of the projection optical system, a second mirror member which has a second reflecting surface and is configured to bend the optical axis, a supporting mechanism configured to support the first mirror member and the second mirror member, and the supporting mechanism is positioned to position the first mirror member and the second mirror member while a positional relationship between the first mirror member and the second mirror member is maintained.

Abstract: Projection objectives, projection exposure apparatuses and related systems and components are disclosed.

Abstract: There is provided a multilayer mirror (80) comprising a layer of a first material (84) and a layer of silicon (82). The layer of the first material and the layer of silicon form a stack of layers. An exposed region of the layer of silicon comprises a modification that is arranged to improve the robustness of the exposed region of silicon.

Abstract: An exposure apparatus includes a mask-moving section movable in a first direction while holding a mask formed with a pattern; an illumination system which forms first and second illumination areas separated each other by a spacing distance in the first direction; a substrate-moving section movable in a second direction while holding a photosensitive substrate; a projection optical system which forms first and second projected images of the patterns of the first and second illumination areas; and a restricting section which restricts the first and second projected images to be within first and second projection areas respectively. A spacing distance between a first conjugate area with the first projection area and a second conjugate area with the second projection area is set to be such a spacing distance that scanning exposures are successively performed for first and second transfer areas provided adjacently in the second direction.

Abstract: A lithographic apparatus includes an illumination system configured to condition a radiation beam; a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table constructed to hold a substrate; a projection system configured to project the patterned radiation beam onto a target portion of the substrate, and a sensor configured to measure a height level, curvature and/or angle of a surface of a patterning device supported on the support.

Abstract: The disclosure provides projection objectives which may be used in a microlithographic projection exposure apparatus to expose a radiation-sensitive substrate arranged in the region of an image surface of the projection objective with at least one image of a pattern of a mask arranged in the region of an object surface of the projection objective. The disclosure also provides projection exposure apparatus which include such projection objectives, as well as related components and methods.

Abstract: The disclosure relates to optical arrangements in a microlithographic projection exposure apparatus. In accordance with one aspect, an optical arrangement has at least one mirror segment arrangement including a plurality of separate mirror segments. The mirror segments are connected to a carrying structure of the projection exposure apparatus via mounting elements. At least one of the mounting elements, which is assigned to a first one of the mirror segments, extends, on the opposite side to the optically active surface of the mirror segment arrangement, at least partly into the region of a second mirror segment of the mirror segment arrangement. The second mirror segment is adjacent to the first mirror segment.

Abstract: An imaging optics is provided for lithographic projection exposure for guiding a bundle of imaging light with a wavelength shorter than 193 nm via a plurality of mirrors for beam-splitter-free imaging of a reflective object in an object field in an object plane into an image field in an image plane. An object field point has a central ray angle which is smaller than 3°. At least one of the mirrors is a near-field mirror. The imaging optics which can allow for high-quality imaging of a reflective object.

Abstract: A scanning exposure apparatus has plural projection optical systems having plural mirrors configured to form an optical-axis shift vector. Its component in a direction orthogonal to a scanning direction is set so that adjacent areas in plural areas on the original can adjoin each other when viewed from the direction orthogonal to the scanning direction and adjacent areas in plural areas on the substrate can adjoin each other when viewed from the direction. A size of its component in the scanning direction is set so that a product between the imaging magnification of each projection optical system and a distance between centers of two areas on the original in the scanning direction corresponding to two projection optical systems in the plurality of projection optical systems can be equal to a distance between centers of two areas on the substrate corresponding to the two projection optical systems in the scanning direction.

Abstract: A lithographic apparatus includes: an illumination system configured to condition a radiation beam; a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table constructed to hold a substrate; a projection system configured to project the patterned radiation beam onto a target portion of the substrate, and a deformation sensor to determine deformations of an object of the lithographic apparatus, wherein the deformation sensor includes at least one optical fiber arranged on or in the object, the optical fiber including one or more Bragg gratings, and an interrogation system to interrogate the one or more Bragg gratings.

Abstract: A multilayer mirror is configured to reflect extreme ultraviolet (EUV) radiation while absorbing a second radiation having a wavelength substantially-longer than that of the EUV radiation. The mirror includes a plurality of layer pairs stacked on a substrate. Each layer pair comprises a first layer that includes a first material, and a second layer that includes a second material. The first layer is modified to reduce its contribution to reflection of the second radiation, compared with a simple layer of the same metal having the same thickness. Modifications can include doping with a third material in or around the metal layer to reduce its electric conductivity by chemical bonding or electron trapping, and/or splitting the metal layer into sub-layers with insulating layers. The number of layers in the stack is larger than known multilayer mirrors and may be tuned to achieve a minimum in IR reflection.

Abstract: A mirror (M) of a projection exposure apparatus for microlithography configured for structured exposure of a light-sensitive material and a method for producing a mirror (M). The mirror (M) has a substrate body (B), a first mirror surface (S) and a second mirror surface (S?). The first mirror surface (S) is formed on a first side (VS) of the substrate body (B). The second mirror surface (S?) is formed on a second side (RS) of the substrate body (B), the second side being different from the first side of the substrate body (B). The mirror (M) may be embodied, in particular, such that the substrate body (B) is produced from a glass ceramic material.

Abstract: An optical imaging system serving for imaging a pattern arranged in an object plane of the imaging system into an image plane of the imaging system with the aid of electromagnetic radiation from a wavelength range around a main wavelength ?0 has a multiplicity of mirrors. Each mirror has a mirror surface having a reflective layer arrangement having a sequence of individual layers.

Abstract: An imaging optics includes a plurality of mirrors which reflect imaging light to image an object field in an object plane into an image field in an image plane. A mirror body of at least one of the mirrors has a through-opening for the imaging light to pass through. The through-opening has an internal region of a smallest opening width in the mirror body. The through-opening expands from the internal region towards both edge regions of the mirror body. A disturbing influence of unused light portions is reduced or eliminated completely.

Abstract: An optical arrangement includes a multiplicity of optical elements and a carrier structure which carries the optical elements. The carrier structure is composed of at least two releasably interconnected modules. Each module is composed of at least one carrier structure subelement. A subhousing is produced by a multiplicity of carrier structure subelements and/or modules. The subhousing has a geometry that varies, at least in regions, in correspondence to a usable beam path in the projection exposure apparatus, the usable beam path being defined as an envelope of all light bundles which can propagate from all field points in a field plane to an image plane of the projection exposure apparatus. A projection exposure apparatus for EUV lithography includes such an optical arrangement.

Abstract: An optical arrangement includes at least one optical element and a support element for the optical element. The optical element and the support element are connected together by way of at least three decoupling elements. The decoupling elements are formed monolithically with the optical element and with the support element.

Abstract: An optical apparatus has a moveable reflective element and associated actuator. The actuator includes a first magnet which is connected to the moveable reflective element such that movement of the first magnet will cause the moveable reflective element to move, and a second magnet which is connected to a motor such that operation of the motor will cause the second magnet to move. The second magnet is positioned relative to the first magnet such that moving the second magnet will cause the first magnet to move.

Abstract: Example embodiments of the inventive concepts relate to a reflection mask including an upper surface configured to reflect extreme ultraviolet EUV light, a lower surface opposite the upper surface, where the lower surface includes at least one alignment key. The reflection mask may include a conductive layer, a substrate on the conductive layer, a reflection layer on the substrate, and an absorption pattern on the reflection layer. The reflection layer may define the upper surface configured to reflect extreme ultraviolet EUV light. The absorption pattern may expose the upper surface of the reflection layer.

Abstract: The disclosure provides an illumination optical system for microlithography that is designed so that, even with a change of illumination setting (e.g., a change in the given illumination conditions in the object field), variation of illumination parameters over the object field is confined within predetermined tolerances.

Abstract: A method for correcting at least one image defect of a projection objective of a lithography projection exposure machine, the projection objective comprising an optical arrangement composed of a plurality of lenses and at least one mirror, the at least one mirror having an optically operative surface that can be defective and is thus responsible for the at least one image defect, comprises the steps of: at least approximately determining a ratio VM of principal ray height hMH to marginal ray height hMR at the optically operative surface of the at least one mirror, at least approximately determining at least one optically operative lens surface among the lens surfaces of the lenses, at which the magnitude of a ratio VL of principal ray height hLH to marginal ray height hLR comes at least closest to the ratio VM, and selecting the at least one determined lens surface for the correction of the image defect.

Abstract: An illumination optical system includes a pair of fly-eye mirrors configured to receive light from a light source, a first condenser configured to condense light from the pair of fly-eye mirrors, a reflection type integrator configured to receive light from the first condenser, the reflection type integrator including a plurality of cylindrical reflective surfaces having parallel generating line directions, an aperture stop arranged perpendicular to the generating line direction, and a second condenser configured to superpose on an illuminated surface luminous fluxes from a plurality of cylindrical reflective surfaces of the reflection type integrator.