Abstract: The present disclosure generally relates to data storage devices, and more specifically, to a magnetic media drive employing a magnetic recording head. The head includes a main pole, a trailing shield, and a MAMR stack including at least one magnetic layer. The magnetic layer has a surface facing the main pole, and the surface has a first side at a media facing surface (MFS) and a second side opposite the first side. The length of the second side is substantially less than the length of the first side. By reducing the length of the second side, the area to be switched at a location recessed from the MFS is reduced as a current flowing from the main pole to the trailing shield or from the trailing shield to the main pole. With the reduced area of the magnetic layer, the overall switch time of the magnetic layer is decreased.

Abstract: An electromechanical sensor and a method of sensing an object or a tactile input using the sensor. The sensor includes: a base provided with a magnetic sensor arranged to detect a change in magnetic flux at the position of the magnetic sensor; a flexible film adjacent to the magnetic sensor; and a magnetic element provided on the flexible film; wherein the magnetic element is arranged to move relative to the magnetic sensor when the flexible film is reversibly deformed by an external force applied to the flexible film.

Abstract: A magnetoresistance effect element includes a underlayer, a protective layer, a laminated body located between the underlayer and the protective layer and including a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer in order from a side closest to the underlayer, and an intermediate layer located between the underlayer and the first ferromagnetic layer, or between the second ferromagnetic layer and the protective layer, wherein, one ferromagnetic layer selected from the first ferromagnetic layer and the second ferromagnetic layer and in contact with the intermediate layer is a Heusler alloy having a Co basis, and a main component of the intermediate layer is an element other than Co among elements constituting the Heusler alloy having the Co basis.

Abstract: The present disclosure generally relates to a Wheatstone bridge array comprising TMR sensors and a method of fabrication thereof. In the Wheatstone bridge array, there are four distinct TMR sensors. The TMR sensors are all fabricated simultaneously to create four identical TMR sensors that have synthetic antiferromagnetic free layers as the top layer. The synthetic antiferromagnetic free layers comprise a first magnetic layer, a spacer layer, and a second magnetic layer. After forming the four identical TMR sensors, the spacer layer and the second magnetic layer are removed from two TMR sensors. Following the removal of the spacer layer and the second magnetic layer, a new magnetic layer is formed on the now exposed first magnetic layer such that the new magnetic layer has substantially the same thickness as the spacer layer and second magnetic layer combined.

Abstract: An assembly for lapping multiple row bars, the assembly including a carrier having at least one carrier bond pad, multiple row bars adjacent to each other in a stack, wherein a first row bar of the stack is positioned closer to the carrier than any of the other multiple row bars of the stack and comprises at least one row bar bond pad, an electrical connection between at least one of the carrier bond pads and at least one of the row bar bond pads of the first row bar, and at least one electrical trace extending through at least two of the multiple row bars and electrically connected to at least the first row bar and one additional row bar of the stack. An outermost row bar of the stack includes an outer surface and at least one electronic lapping guide.

Abstract: Systems and methods are disclosed for dynamically adjusting parameters used during a read operation to reduce stress on a read head. In certain embodiments, an apparatus may comprise a read head configured to read data stored to a data storage medium, and a control circuit that controls a parameter of the read head influencing the read head's ability to accurately read data. The control circuit may be configured to extend the working lifespan of the read head by monitoring a read performance of the read head, and adjusting the parameter to reduce the read performance when the read performance is greater than a first threshold.

Abstract: A magnetic field detection device includes a magnetism detection element, a modulator, and a demodulator. The magnetism detection element has a sensitivity axis along a first direction. The modulator is configured to impart a spin torque to the magnetism detection element. The spin torque has a rotational force and oscillates at a first frequency. The rotational force is exerted on a plane including the first direction and a second direction orthogonal to the first direction. The demodulator is configured to demodulate an output signal received from the magnetism detection element and to detect an intensity of a measurement target magnetic field exerted on the magnetism detection element on the basis of an amplitude of the output signal. The output signal has the first frequency.

Abstract: A metal layer and first dielectric hard mask are deposited on a bottom electrode. These are patterned and etched to a first pattern size. The patterned metal layer is trimmed using IBE at an angle of 70-90 degrees wherein the metal layer is reduced to a second pattern size smaller than the first pattern size. A dielectric layer is deposited surrounding the patterned metal layer and polished to expose a top surface of the patterned metal layer to form a via connection to the bottom electrode. A MTJ stack is deposited on the dielectric layer and via connection. The MTJ stack is etched to a pattern size larger than the via size wherein an over etching is performed. Re-deposition material is formed on sidewalls of the dielectric layer underlying the MTJ device and not on sidewalls of a barrier layer of the MTJ device.

Abstract: A computer-implemented method includes, by one or more processors in electronic communication with a tunneling magnetoresistive sensor, wherein the tunneling magnetoresistive sensor is a component of a magnetic storage drive configured to read magnetic data from a magnetic storage medium, detecting a short across the tunneling magnetoresistive sensor, measuring a change in resistance of the tunneling magnetoresistive sensor, measuring a change in voltage amplitude for the tunneling magnetoresistive sensor, and dividing said change in voltage amplitude by said change in resistance to yield a ratio. The computer-implemented method further includes, responsive to the ratio being greater than a predetermined ratio threshold, determining that the short is caused by a magnetic shunt. A corresponding computer program product and computer system are also disclosed.

Abstract: A composite storage layer for magnetic memory devices includes a first ferromagnetic layer, a tri-layered spacer stack disposed on the first ferromagnetic layer, a second ferromagnetic layer disposed on the tri-layered spacer stack, and an oxide capping layer on the second ferromagnetic layer. The tri-layered spacer stack comprises a first non-magnetic layer, a discontinuous, insulating oxide layer, and a second non-magnetic layer. The discontinuous, insulating oxide layer is sandwiched by the first non-magnetic layer and the second non-magnetic layer.

Abstract: A metal member includes a first layer and a second layer. The second layer has an average crystal grain size different from an average crystal grain size of the first layer. An intermediate layer having an average crystal grain size smaller than the average crystal grain sizes of the first layer and the second layer is interposed between the first layer and the second layer.

Abstract: A perpendicular magnetoresistive element includes a novel buffer layer having rocksalt crystal structure interfacing to a CoFeB-based recording tri-layer has (100) plane parallel to the substrate plane and with {110} lattice parameter being slightly larger than the bcc CoFe lattice parameter along {100} direction, and crystallization process of amorphous CoFeB material in the recording layer during thermal annealing leads to form bcc CoFe grains having epitaxial growth with in-plane expansion and out-of-plane contraction. Accordingly, a perpendicular anisotropy, as well as a perpendicular magnetization, is induced in the recording layer. The invention preferably includes materials, configurations and processes of perpendicular magnetoresistive elements suitable for perpendicular spin-transfer torque MRAM applications.

Abstract: An MRAM device includes a first conductive pattern including a material generating a spin orbital torque, a torque transfer pattern contacting a portion of an upper surface of the first conductive pattern, an insulation pattern on a side of the torque transfer pattern and covering the first conductive pattern, and a magnetic tunnel junction (MTJ) structure on the torque transfer pattern, the MTJ structure including a free layer pattern, a tunnel barrier pattern, and a fixed layer pattern sequentially stacked.

Abstract: The present disclosure relates to pretreating a magnetic recording head to increase the lifetime of the magnetic media drive. A transparent smear is purposefully formed on the magnetic recording head to ensure the magnetic recording head does not overheat and lead to a short drive lifetime. The transparent smear is formed from material found in the magnetic media. The transparent smear is formed by pretreating the magnetic recording head with the transparent material from the magnetic media. The pretreating occurs without writing any data to the magnetic media. Once the transparent smear is in place, writing may occur. The magnetic recording head can be retreated at a later time should the transparent smear degrade. Furthermore, if an optically absorbing smear develop, it can be removed and a new transparent smear may be formed.

Abstract: There is provided a magnetic recording medium of which an average thickness tT is tT?5.6 ?m, a dimensional change amount ?w in a width direction with respect to a change in tension in a longitudinal direction is 660 ppm/N??w, a squareness ratio in a vertical direction is 65% or more, and a width deformation coefficient b during long-term storage in a case where a long-term storage width change amount Y is defined as Y=blog(t) is ?0.06 ?m?b?0.06 ?m.

Abstract: A spin transfer torque reversal assisted magnetic recording (STRAMR) device is disclosed wherein a flux guiding layer (FGL) magnetization flips to an opposite direction opposing the write gap (WG) field because of spin torque from an adjacent spin polarization (SP) layer and spin injection layer (SIL) when a current (Ia) of sufficient density is applied across the device and between the main pole (MP) and trailing shield (TS) thereby enhancing the MP write field. The SP layer adjoins the MP or TS and maintains a magnetization in the WG field direction. One or both of the SIL and FGL has a spin polarization from ?0.4 to 0.3 and may be doped with C, N, or B so that the extent of FGL flipping is greater at a given current density than in the prior art where all magnetic layers within the STRAMR device have a positive spin polarization ?0.4.

Abstract: A multi-layer barrier and method of formation. The method includes applying oxidation to a top of a reference layer, and depositing a plurality of different metal layers over the reference layer. The method also includes providing different oxidation doses at different temperatures to different layers of the plurality of metal layers. The method further includes performing an annealing operation after depositing at least two of the plurality of different metal layers.

Abstract: A metal layer and first dielectric hard mask are deposited on a bottom electrode. These are patterned and etched to a first pattern size. The patterned metal layer is trimmed using IBE at an angle of 70-90 degrees wherein the metal layer is reduced to a second pattern size smaller than the first pattern size. A dielectric layer is deposited surrounding the patterned metal layer and polished to expose a top surface of the patterned metal layer to form a via connection to the bottom electrode. A MTJ stack is deposited on the dielectric layer and via connection. The MTJ stack is etched to a pattern size larger than the via size wherein an over etching is performed. Re-deposition material is formed on sidewalls of the dielectric layer underlying the MTJ device and not on sidewalls of a barrier layer of the MTJ device.

Abstract: A perpendicular magnetoresistive element includes a novel recording layer being a multi-layer comprising a first Co-alloy layer including at least one of CoFeB, CoFeB/CoFe and CoFe/CoFeB, a second Co-alloy layer including at least one of CoFeB and CoB, an insertion layer provided between the first Co-alloy layer and the second Co-alloy layer and containing at least one element selected from Zr, Nb, W, Mo, Ru and having a thickness less than 0.5 nm, and a novel buffer layer having rocksalt crystal structure(s) interfacing to the recording layer with lattice parameter mismatch between 3% and 18%. The magnetoresistive element is annealed at an elevated temperature and both the first Co-alloy layer and the second Co-alloy layer are crystallized to form body-center cubic (bcc) CoFe or bcc Co grain having epitaxial growth with (100) plane parallel to substrate and with in-plane expansion and out-of-plane contraction.

Abstract: A system for transition curvature improvement on thermally assisted magnetic recording, includes: an energy source, a thermally assisted magnetic recording head including a magnetic main pole for writing of a thermally assisted magnetic recording medium, a waveguide for directing an energy produced by the energy source, and a PPG including a peg and adjacent to the waveguide, the PPG being for turning the energy into a surface plasmon which travels down the peg to heat the thermally assisted magnetic recording medium. The magnetic main pole includes a first portion enabling a first magnetic field strength and at least one additional portion enabling a magnetic field strength stronger than the first magnetic field strength such that a magnetic field of the magnetic main pole along a horizontal direction thereof enables generation of a substantially straight transition curve while writing on the thermally assisted magnetic recording medium.

Abstract: A method, an apparatus, and a computer program product for wireless communication are provided. The apparatus determines a position of the apparatus. The apparatus broadcasts information in a first subset of a set of resources. The information includes the position of the apparatus, a sequence ID, and a resource ID associated with a second subset of the set of resources. The apparatus broadcasts a sequence in at least one symbol of the second subset of the set of resources. The at least one symbol is identified by the resource ID and the sequence is identified by the sequence ID.

Abstract: A data storage device is disclosed comprising a first head actuated over a first disk surface, the first head comprising a plurality of elements including a first element. During a first write operation of the first head, a first bias signal having a first polarity is applied to the first element, and a write interval of the first write operation is measured. During a non-write mode of the first head, a second bias signal having a second polarity opposite the first polarity is applied to the first element during a reverse bias interval that is based on the write interval of the first write operation.

Abstract: An apparatus including an array of memory cells arranged in a grid defined by word lines and bit lines in a generally orthogonal orientation relative to one another, a memory cell including a resistive memory component and an access transistor, wherein the access transistor includes a diffusion region disposed at an acute angle relative to an associated word line. A method including etching a substrate to form a plurality of fins each including a body having a length dimension including a plurality of first junction regions and a plurality of second junction regions that are generally parallel to one another and offset by angled channel regions displacing in the length dimension an end of a first junction region from the beginning of a second junction region; removing the spacer material; and introducing a gate electrode on the channel region of each of the plurality of fins.

Abstract: A magnetic memory device is provided including a magnetic tunnel junction pattern having a free pattern, a reference pattern, and a tunnel barrier pattern between the free pattern and the reference pattern. The free pattern includes a first sub-free pattern, a second sub-free pattern, and a third sub-free pattern. The first sub-free pattern is between the tunnel barrier pattern and the third sub-free pattern, and the second sub-free pattern is between the first sub-free pattern and the third sub-free pattern. The second sub-free pattern includes nickel-cobalt-iron-boron (NiCoFeB), and the third sub-free pattern includes nickel-iron-boron (NiFeB). Related methods of fabrication are also provided.

Abstract: Magnetic sensors with effectively shaped side shields and their fabrication processes are provided. One such sensor includes a substrate, a sensor stack disposed on the substrate and having a stripe height, where the sensor stack further includes a front edge disposed at an air bearing surface (ABS) of the magnetic sensor, a back edge opposite of the front edge, and two side edges, and a side shield adjacent to each of the two side edges of the sensor stack, each side shield having a side shield height defined as a distance from the ABS to a back edge of the side shields, where the side shield height is greater than the stripe height, and where substantially no residue from materials used to form the side shield are disposed at the back edge of the sensor stack.

Abstract: A perpendicular magnetic recording writer has a main pole (MP) with a write gap formed between the MP trailing side and a trailing shield, a side gap between each MP side and a side shield, and a leading gap between the MP leading side and a leading shield. A flux guiding element is formed in at least one gap and comprises an inner non-spin preserving layer adjoining the MP, a middle flux guiding layer (FGL), and an outer spin preserving layer. A key feature is that the FGL has a magnetization that may be aligned anti-parallel to a gap field during a write process when a current of sufficient magnitude is applied from the adjacent shield towards the MP thereby increasing reluctance in the gap and forcing additional flux out of the MP at the air bearing surface to enhance writability on a magnetic recording medium.

Abstract: In one general embodiment, an apparatus includes a substrate, a thin film layer on the substrate having transducers therein, and a portion of a slot extending along the substrate, the portion of the slot defining a skiving edge. A length of a tape bearing surface between the thin film layer and the skiving edge is in a range of about 7 to about 30 microns. In another general embodiment, an apparatus includes a substrate, a thin film layer on the substrate having transducers therein, and a slot extending along the substrate, the slot defining a skiving edge. A length of a tape bearing surface between the thin film layer and the skiving edge is in a range of about 7 to about 30 microns.

Abstract: Aspects of the present disclosure relate to protecting the contents of memory in an electronic device, and in particular to systems and methods for transferring data between memories of an electronic device in the presence of strong magnetic fields. In one embodiment, a method of protecting data in a memory in an electronic device includes storing data in a first memory in the electronic device; determining, via a magnetic sensor, a strength of an ambient magnetic field; comparing the strength of the ambient magnetic field to a threshold; transferring the data in the first memory to a second memory in the electronic device upon determining that the strength of the ambient magnetic field exceeds the threshold; and transferring the data from the second memory to the first memory upon determining that the strength of the ambient magnetic field no longer exceeds the threshold.

Abstract: An apparatus according to one embodiment includes a module having a substrate, read and write transducers positioned towards a media facing side of the module, and a closure. The write transducers include write poles having media facing sides with zero or near-zero recession from a plane extending along the media facing side of a substrate of the module. The read transducers each have two shields. Media facing sides of the two shields are recessed a same amount from the plane, and are more recessed from the plane than the write poles.

Abstract: This invention provides a manufacturing method of a magnetoresistive effect element having a higher MR ratio than a conventional element. A manufacturing method of a magnetoresistive effect element of an embodiment of the invention includes: a step of forming a tunnel barrier layer on a substrate, on a surface of which one of a magnetization free layer and a magnetization fixed layer is formed; a step of cooling the substrate after the step of forming a tunnel barrier layer; a step of forming an other one of the magnetization free layer and the magnetization fixed layer on the tunnel barrier layer after the step of cooling; and a step of raising a temperature of the substrate after the step of forming the other one of the magnetization free layer and the magnetization fixed layer.

Abstract: A magnetic cell includes a magnetic region formed from a precursor magnetic material comprising a diffusive species and at least one other species. An amorphous region is proximate to the magnetic region and is formed from a precursor trap material comprising at least one attracter species having at least one trap site and a chemical affinity for the diffusive species. The diffusive species is transferred from the precursor magnetic material to the precursor trap material where it bonds to the at least one attracter species at the trap sites. The species of the enriched trap material may intermix such that the enriched trap material becomes or stays amorphous. The depleted magnetic material may then be crystallized through propagation from a neighboring crystalline material without interference from the amorphous, enriched trap material. This enables high tunnel magnetoresistance and high magnetic anisotropy strength. Methods of fabrication and semiconductor devices are also disclosed.

Abstract: A current sensor includes an element substrate that has a first surface facing a wire to which electric current to be measured is supplied and a second surface positioned on the opposite side of the first surface; a pair of sloping surfaces that are formed mutually juxtaposed in the element substrate so as to have slope angles by which their mutual spacing gradually decreases in a first direction approximately orthogonal with the first surface heading from the first surface to the second surface; a pair of magnetism detecting elements that are respectively attached to the pair of sloping surfaces formed in the element substrate; and external connection terminals that are respectively connected to the pair of magnetism detecting elements and that extend in a second direction that is the opposite direction of the first direction, in which the sensitivity directions of the pair of magnetism detecting elements are respectively set so as to slope along the pair of sloping surfaces.

Abstract: A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a “Z” axis magnetic field onto sensors orientated in the XY plane.

Abstract: According to one embodiment, a strain sensing element to be provided on a deformable substrate, the element includes: a reference layer; a magnetization free layer; and a spacer layer. Magnetization of the magnetization free layer changes in accordance with deformation of the substrate. The spacer layer is provided between the reference layer and the magnetization free layer. The magnetization free layer has: a first magnetic layer; a second magnetic layer; and a magnetic coupling layer. The first magnetic layer is provided in contact with the spacer layer. The second magnetic layer is provided to be separated from the first magnetic layer. The magnetic coupling layer is provided between the first magnetic layer and the second magnetic layer. Magnetization of the first magnetic layer is anti-parallel to magnetization of the second magnetic layer.

Abstract: A magnetic memory includes a magnetic thin line including a plurality of magnetic domains, a reference layer having a magnetization, a nonmagnetic layer, a first fixed magnetization part having a magnetization, a second fixed magnetization part having a magnetization, a first electrode, a second electrode, and a third electrode.

Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a reference layer and nonmagnetic spacer layer between the free and reference layers. At least one of the free and reference layers includes at least one Heusler multilayer. Each of the at least one Heusler multilayer includes a plurality of Heusler adjoining layers that at least one interface. The Heusler layers include a plurality of Heusler alloys, have a plurality of lattice parameters and have a plurality of coefficients of thermal expansion. The magnetic junction is configured such that the free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.

Abstract: A heat-assisted magnetic recording (HAMR) disk has multiple independent data layers, each data layer being a continuous non-patterned layer of magnetizable material. Each data layer can store data independent and not related to the data stored in the other data layers. The data layers are separated by a nonmagnetic spacer layer (SL) and each data layer is formed of high-anisotropy (Ku) material so that the coercivities of lower and upper data layers (RL1 and RL2) are greater than the magnetic write field. At a high laser power both RL1 and RL2 are heated to above their respective Curie temperatures and data is recorded in both RL1 and RL2. At low laser power only upper RL2 is heated to above its Curie temperature and data is recorded only in RL2. The SL prevents lower RL1 from being heated to above its Curie temperature at low laser power.

Abstract: A magnetic-disk glass substrate of the present invention has an average value of squares of inclinations of 0.0025 or less and a frequency at which squares of inclinations are 0.004 or more of 15% or less, in a case where samples of inclinations on a main surface are obtained at intervals of 10 nm.

Abstract: An electronic device includes a semiconductor memory, and the semiconductor memory includes a first magnetic layer having a variable magnetization direction; a second magnetic layer having a pinned magnetization direction; and a tunnel barrier layer interposed between the first magnetic layer and the second magnetic layer, wherein the second magnetic layer includes a ferromagnetic material with molybdenum (Mo) added thereto.

Abstract: A lateral spin valve reader that includes a detector structure located proximate to a bearing surface and a spin injection structure located away from the bearing surface. The lateral spin valve reader also includes a channel layer extending from the detector structure to the spin injection structure. An exterior cladding, disposed around the channel layer, suppresses spin-scattering at surfaces of the channel layer.

Abstract: A magnetic cell core includes a seed region with a plurality of magnetic regions and a plurality of nonmagnetic regions thereover. The seed region provides a template that enables formation of an overlying nonmagnetic region with a microstructure that enables formation of an overlying free region with a desired crystal structure. The free region is disposed between two nonmagnetic regions, which may both be configured to induce surface/interface magnetic anisotropy. The structure is therefore configured to have a high magnetic anisotropy strength, a high energy barrier ratio, high tunnel magnetoresistance, a low programming current, low cell-to-cell electrical resistance variation, and low cell-to-cell variation in magnetic properties. Methods of fabrication, memory arrays, memory systems, and electronic systems are also disclosed.

Abstract: A magnetic field sensor has a magnetoresistive rod having a stack of stacked layers that include a pinned layer having a fixed magnetization direction almost perpendicular to a longitudinal direction, a free layer comprising a magnetostrictive material having a coefficient of magnetostriction greater than 20 ppm to 25° C. and a longitudinal axis of easiest magnetization, the magnetization changing when the free layer is exposed to a magnetic field, a non-magnetic spacer layer interposed between the free and pinned layers to form a tunnel junction or spin valve, and a stress-generating layer for exerting uniaxial stress essentially such that a product of stress and magnetostriction coefficient is greater than 500 ppm·MPa at 25° C. The rod's length is at least ten times its greatest width.

Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer having a perpendicular and invariable magnetization, a first nonmagnetic insulating layer on the first magnetic layer, a second magnetic layer on the first nonmagnetic insulating layer, the second magnetic layer having a perpendicular and variable magnetization, a second nonmagnetic insulating layer on the second magnetic layer, and a nonmagnetic conductive layer on the second nonmagnetic insulating layer. The second nonmagnetic insulating layer includes a first metal oxide with a predetermined element. The first nonmagnetic insulating layer includes a second metal oxide.

Abstract: Rotational latency is reduced in a standard conventional form factor HDD system by replacing, for example, the prior art rotary arm actuator of a conventional HDD, with one or more belts and pulleys and one or more read/write heads mounted on, or otherwise associated with the belts. Multiple scaled iterations facilitate energy savings and power optimized systems, without compromise to data access performance.

Abstract: A magnetic cell includes a magnetic region formed from a precursor magnetic material comprising a diffusive species and at least one other species. An amorphous region is proximate to the magnetic region and is formed from a precursor trap material comprising at least one attracter species having at least one trap site and a chemical affinity for the diffusive species. The diffusive species is transferred from the precursor magnetic material to the precursor trap material where it bonds to the at least one attracter species at the trap sites. The species of the enriched trap material may intermix such that the enriched trap material becomes or stays amorphous. The depleted magnetic material may then be crystallized through propagation from a neighboring crystalline material without interference from the amorphous, enriched trap material. This enables high tunnel magnetoresistance and high magnetic anisotropy strength. Methods of fabrication and semiconductor devices are also disclosed.

Abstract: An apparatus and associated method generally relate to data writing and more specifically to writing data to a rotating media. An embodiment of such an apparatus comprises a slider body, a transducer and a write driver. The transducer comprises a writer. The write driver is integrated on the slider body, and directly connected to the writer.

Abstract: A method of fabricating a vertical two-bits per cell STT MRAM for high density storage includes forming a bottom electrode within an interlayer dielectric (ILD) layer, forming an anti-ferromagnetic (AF) layer over the bottom electrode, and forming a fixed layer along sidewalls of the AF layer. The method further includes forming a tunnel layer along the fixed layer, forming a free layer along the tunnel layer, and forming a top electrode along the free layer and over an upper surface of the AF layer.

Abstract: Systems and methods can perform automatic computation developed using carbon nanotubes and graphene nanoribbons and/or InSb p-n bilayer channel avalanche diodes and wires. Spin logic can provide improvements in speed, power, and area, promising to be a high-performance logic family for the next generation of computing. The systems and methods can replace CMOS, for example, for general computing applications.

Abstract: A sapphire structure with a metal substructure is disclosed. The sapphire structure with a metal substructure includes a sapphire structure and a metal substructure. The sapphire structure includes a flat surface and a concave portion on the flat surface. The metal substructure in the concave portion is bonded to an inner surface of the concave portion and includes a surface portion that is substantially flush with the flat surface.

Abstract: A spin valve element according to an embodiment includes: a nonmagnetic base layer; a first terminal including a first magnetic layer connecting to a portion near one of opposing end faces of the nonmagnetic base layer; a second terminal including a second magnetic layer disposed and connecting to the nonmagnetic base layer so as to be at a distance from the first terminal; a third terminal including a third magnetic layer disposed and connecting to the nonmagnetic base layer so as to be at distances from the first and second terminals, the second terminal and the third terminal connecting to a current source that passes a sense current, and the first terminal and one of the second terminal and the third terminal connecting to a voltage detection unit that detects a voltage.