Abstract: Associative memories capable of outputting multiple reference data close to search data are provided. A memory array compares each of the multiple reference data with the search data in parallel and generates multiple comparison current signals representing the result of the comparison. A WLA converts the multiple comparison current signals into voltages. During the first cycle, the WLA detects the lowest voltage among the voltages as Winner and detects the remaining voltages as Loser. After the second cycle, based on feedback signals, the WLA detects all the voltages other than a voltage detected as Winner during the last preceding cycle, and detects the lowest voltage among the detected voltages as Winner and detects the remaining detected voltages as Loser. The WLA repeats these operations k times.

Abstract: A storage unit having functions of controlling a write power, a read power and a reproducing magnetic field with respect to an optical recording medium, is provided with a first section for storing test write data on the optical recording medium for each write temperature information during a write, and a second section for controlling at least the reproducing magnetic field depending on optimum reproducing conditions which are obtained by reproducing the test write data corresponding to a write temperature of data which is to be actually reproduced from the optical recording medium during a read.

Abstract: In one embodiment, the magneto-optical recording medium of the present invention has a recording layer structure including at least a readout magnetic film, a control magnetic film, and a recording magnetic film. The readout magnetic film is a perpendicular magneto-anisotropy film at a temperature in a predetermined range. The control magnetic film provided between the readout magnetic film and the recording magnetic film has a prescribed structure so as to assume a perpendicular magneto-anisotropy film at a temperature in a predetermined range and an in-plane magneto-anisotropy film at a temperature in a range other than the predetermined range.

Abstract: A magneto-optical recording medium has an exchange-coupled triplilayer film wherein a readout layer which has in-plane magnetization at room temperature, and in which a transition occurs from in-plane magnetization to perpendicular magnetization when temperature thereof is raised above T.sub.1, an intermediate layer which has perpendicular magnetization at room temperature, the perpendicular magnetization being maintained from room temperature to Curie temperature T.sub.3, and a recording layer which has perpendicular magnetization at room temperature, the perpendicular magnetization been maintained from room temperature to Curie temperature T.sub.2 which are laminated in this order, and the temperatures T.sub.1, T.sub.2 and T.sub.3 satisfy the following inequality: T.sub.1 <T.sub.3 <T.sub.2.

Abstract: A system is described for arraying multi-device processing nodes in a 3-dimensional computing architecture and for flexibly connecting their ports. The topology of each processing node is of a fixed and constant physical geometry. The nodes may comprise a digital signal processor chip, a static RAM, and a communications and network controller. The nodes are mounted on boards. Selective connection of ports of each board to ports of another adjacent board is effected by a routing and spacer element having internal routing paths.

Abstract: A magnetic-bubble memory device comprising a bubble propagation path defined by patterns of magnetically soft material, along which magnetic bubbles propagate in response to an in-plane rotating magnetic drive field. The bubble propagation path has a first track and a second track and a connection for interconnecting the first track and the second track. The first track is defined by conventional propagation patterns, and the second track is defined by known hook-shaped wide-gap patterns or modified wide-gap patterns. The connection includes a connection pattern having one end portion arranged with respect to the terminal pattern of the first track in the same constructional relationship as that between the successive patterns of the first track and another end portion arranged with respect to the terminal pattern of the second track in the same constructional relationship as that between the successive patterns of the second track. Such a bubble propagation track makes it possible to realize a 4 .mu.

Abstract: Replicate/swap gating circuitry comprising separate gates oriented to be responsive to different phases of an in-plane magnetic field for transferring data to and from an adjacent storage loop in a bubble memory, said gate being formed of magnetic domain propagate elements arranged in propagation paths to perform several independently operable gating functions by a single current conductor on application of current pulses at selected phases of the rotating in-plane magnetic field.

Abstract: In a magnetic bubble (domain) memory chip, transfer gating circuits of propagate elements oriented to be responsive to different phases of in-plane rotating magnetic field are operated by a single conductor which is subjected to current pulses during a specific phase of the rotating field cycle to transfer bubbles onto different bubble paths. The transfer gates perform their gating function only when a control current pulse occurs during a specific phase of the rotating field cycle and are unresponsive to the current pulses at other phase times on the same conductor which actuate other gates.

Abstract: A magnetic bubble shift register store having a plate of magnetic material whose preferred magnetization direction extends transverse to the plane of the plate and in which bubbles are situated, said plate having two separate, elongated generally parallel extending continuous bubble paths, of lower bubble energy in comparison with the vicinity; the center lines of said paths being situated at a distance from each other which is at least equal to the mean bubble diameter. The 0-bits of written information to be transported and stored are represented by bubbles in the one path, while the 1-bits thereof are represented by bubbles in the other path. The interaction between the bubbles ensures that bubbles in the two paths cannot pass each other, with the result that the information represented by the bubbles can be unambiguously transported and maintained in the path direction.

Abstract: A logical operation circuit for performing a desired logical operation by transferring at least one magnetic bubble on a plurality of magnetic bubble transfer routes paths employing chevron patterns, in which two neighboring ones of the magnetic bubble transfer routes provides with a first magnetic bubble transfer section which is formed by narrowed transfer routes or by magnetic bubble elongating means, so that a magnetic bubble transferred through one of the two magnetic bubble transfer routes is stably held across the two magnetic bubble transfer routes of the first magnetic bubble transfer section, while two magnetic bubbles transferred through the two magnetic bubble transfer routes on the two magnetic bubble transfer routes respectively.

Abstract: A magnetic bubble device comprising a non-magnetic substrate layer, and a sequence of magnetic layers joined to each other and to the magnetic substrate layer, e.g. by epitaxial growing of crystalline layers, whereby at least two of the magnetic layers may accommodate magnetic bubbles which are stably joined through an interlayer magnetic compensation wall, or by an essentially finite potential barrier.

Abstract: A crossover circuit for propagating magnetic domain bubbles in different directions under the drive of an in-plane rotating magnetic field. The crossover circuit includes intersecting vertical and horizontal elements and a pair of L combinations each having a vertical element and a horizontal element. The L combinations are linked to the intersection by a pair of inclined elements. There is also a short horizontal element and a short vertical element linked to the intersection by a second pair of inclined elements.

Abstract: A set of three input, three output bubble logic gates forms all of the possible distinct output functions for conservative three variable gates. The magnetic interaction between single wall domains propagating through separate channels defined by closely spaced circuit element paths causes the domains to switch to or remain on alternate paths via between-path transfer means in a predetermined fashion. In addition to vertically graded element transfer means, several new circuit arrangements are introduced including non-graded elements, strong and weak S-curves, elements having uneven gradation, and other circuit techniques. A group of primitive realizations are described which can be combined to produce other gates having output functions in each of 31 equivalence classes. A methodology for using the gates in logic design is suggested, and several new building block gates producing functions of two variables are presented.

Abstract: Composite mutually exclusive field-accessed circuit elements common to a plurality of bubble paths. A channel composed of mutually exclusive circuit elements is linked to an adjacent parallel channel of mutually exclusive circuit elements by means of circuit element portions common to both channels. The interconnected channels are operated mutually exclusively by means of corresponding pulsed field sequences. Transfer between the linked channels is via the common circuit element portion. Several new types of propagation circuits are also discussed along with organizations for mutually exclusive major and minor closed loops featuring controlled transfer via common circuit element portions.

Abstract: A storage device comprising a main magnetic field generator, a rotary magnetic field generator and a number of plates of magnetic material which are arranged transverse to the main magnetic field and in which magnetic domains can be formed and transported along a domain guide structure consisting of discrete element. The domain guide structure comprises a switching device incorporating diverging switches which are arranged according to four orientations which correspond to corresponding orientations of discrete elements of said domain guide structure. The domain guide structures comprise diverging switches which may be arranged to be shifted with respect to each other over one or more discrete elements of the domain guide structure in different plates, each plate having a specific rotary magnetic field sequence.

Abstract: A magnetic domain memory including bubble operated access elements for non-destructively reading the memory, for erasing bubbles from the memory and for writing new data into the memory. The access elements comprise retrograde transient bubble switches, exclusive merge elements, disjoint crossover elements and bubble generators, all of which are all-bubble logic elements.

Abstract: A large capacity bubble memory device using a basic major-minor loop storage cell design. The basic storage cell is repeated, typically in matrix form, on a suitable bubble domain structure. The cell design is arranged so that interconnecting elements between respective cells permit magnetic bubble domains to be selectively transferred between cells in accordance with the status of switch elements. Control signals control the switch status. The cells include redundancy features so that cells can be interconnected to form a large capacity storage loop whereby chip yield is increased.

Abstract: A large capacity bubble memory device using a basic storage cell design. The basic storage cell is repeated, typically in matrix form, on a suitable bubble domain structure. The cell design is arranged so that interconnecting elements between respective cells permit magnetic bubble domains to be transferred between cells. The cells include redundancy features so that the cells can be interconnected to form a large capacity storage loop.