Abstract: A memory apparatus and method of operation are provided. The apparatus includes memory cells each connected to one of a plurality of word lines. The memory cells are disposed in strings and configured to retain a threshold voltage corresponding to one of a plurality of data states. A control means is coupled to the plurality of word lines and the strings and is configured to apply a read voltage to a selected ones of the plurality of word lines during a read operation and ramp down to a discharge voltage at an end of the read operation and apply a ready voltage to the selected ones of the plurality of word lines during a ready period of time following the read operation. The control means is also configured to adjust at least one of the discharge voltage and the ready voltage based on a temperature of the memory apparatus.

Abstract: A memory device includes a cell array including cells, an address transition detector outputting a transition detection signal as to whether an address of a write command is changed, and a control logic circuit generating one of word-line-on signals for performing a write operation on the cell array in response to the write command, and terminating the write operation in accordance with the transition detection signal. The word-line-on signals include a long-kept word-line-on signal that stays active before the address is changed and a divided word-line-on signal that is, before the address is changed, divided into sub-word-line-on signals.

Abstract: Methods, systems, and devices for a decoding architecture for memory devices are described. Word line plates of a memory array may each include a sheet of conductive material that includes a first portion extending in a first direction within a plane along with multiple fingers extending in a second direction within the plane. Two word line plates in a same plane may be activated via a shared electrode. Memory cells coupled with the two word line plates sharing the electrode, or a subset thereof, may represent a logical page for accessing memory cells. A memory cell may be accessed via a first voltage applied to a word line plate coupled with the memory cell and a second voltage applied to a pillar electrode coupled with the memory cell. Parallel or simultaneous access operations may be performed for two or more memory cells within a same page of memory cells.

Abstract: According to one embodiment, a memory system includes a nonvolatile memory and a controller. The controller acquires, from a host, write data having the same first size as a data write unit of the nonvolatile memory and obtained by dividing write data associated with one write command having a first identifier indicating a first write destination block in a plurality of write destination blocks into a plurality of write data or combining write data associated with two or more write commands having the first identifier. The controller writes the acquired write data having the first size to the first write destination block by a first write operation.

Abstract: A memory includes a bank, the bank includes a plurality of sections, each of the plurality of section includes a plurality of word lines, a plurality of bit lines, and a plurality of storage units arranged in an array, and each of the plurality of storage units is connected to one of the plurality of word lines and one of the plurality of bit lines; the bank is configured to: in a preset mode, in response to a control signal, activate each of a plurality of word lines in at least one target section of the bank, pull up or pull down a level of each of a plurality of bit lines in the target section, and pull a complementary bit line of each of the plurality of bit lines in the target section to a level opposite to a level of the plurality of bit lines.

Abstract: A semiconductor device includes a first circuit having a first power gating structure, a second circuit, and a third circuit having a second power gating structure that is different from the first power gating structure, and suitable for isolating the second circuit from the first circuit during a particular period.

Abstract: A First In First Out (FIFO) memory includes storage units. Outputs of the storage units are connected to one node. The storage unit includes storage sub-units, a selector, and a drive. An input of the selector is connected to outputs of the storage sub-units. An input of the drive is connected to an output of the selector. Driven by a first pointer signal, the storage sub-units receive storage data. Driven by a second pointer signal, the drive outputs the storage data.

Abstract: Embodiments herein describe a multi-port memory system that includes one or more single port memories (e.g., a memory that can perform only one read or one write at any given time, referred to as a 1W or 1R memory). That is, the multi-port memory system can perform multiple read and writes in parallel (e.g., 1R/1W, 1R/3W, 2R/2W, 3R/1W, etc.) even though the memory in the system can only perform one read or one write at any given time. The advantage of doing so is a reduction in area and power.

Abstract: A memory device having a DRAM core and a register stores first data in the register before receiving first and second memory access commands via a command interface and before receiving second data via a data interface. The memory device responds to the first memory access command by writing the first data from the register to the DRAM core and responds to the second memory access command by writing the second data from the data interface to the DRAM core.

Abstract: An example device includes a plurality of computational memory banks. Each computational memory bank of the plurality of computational memory banks includes an array of memory units and a plurality of processing elements connected to the array of memory units. The device further includes a plurality of single instruction, multiple data (SIMD) controllers. Each SIMD controller of the plurality of SIMD controllers is contained within at least one computational memory bank of the plurality of computational memory banks. Each SIMD controller is to provide instructions to the at least one computational memory bank.

Abstract: A system and method for operating a memory cell is provided. A non-volatile memory storage device includes an array of memory cells of differential or single-ended type. In an embodiment, a regulator is coupled to a sense amplifier. The regulator is configured to generate a voltage to gate terminals of one or two transistors of the sense amplifier. In the differential type, the voltage is generated such that the first bias current and the second bias current have a current value equal to the sum of a maximum current flowing in a memory cell being in a RESET state and a fixed current. In the single-ended type, the regulated voltage is generated such that the first bias current and the second bias current have a current value equal to the sum of a fixed current and the reference current generated by the reference current source across temperature.

Abstract: A decoder in an integrated circuit memory device having: a positive section having a first input line; a negative section having a second input line; and an output line connected from both the positive section and the negative section to a voltage driver connected to a memory cell. The positive section and the negative section are controlled by a polarity control signal. When the polarity control signal indicates positive polarity, the positive section drives the output line according to signals received in the first input line; and when the polarity control signal indicates negative polarity, the negative section drives the output line according to signals received in the second input line.

Abstract: A method described herein involves identifying a first time associated with a read operation that retrieves data of a write unit at a memory sub-system, identifying a second time associated with a write operation that stored the data of the write unit at the memory sub-system, and performing a refresh operation for the data of the write unit at the memory sub-system based on a difference between the first time associated with the read operation and the second time associated with the write operation.

Abstract: Disclosed are systems, methods, and computer-readable media for assuring tenant forwarding in a network environment. Network assurance can be determined in layer 1, layer 2 and layer 3 of the networked environment including, internal-internal (e.g., inter-fabric) forwarding and internal-external (e.g., outside the fabric) forwarding in the networked environment. The network assurance can be performed using logical configurations, software configurations and/or hardware configurations.

Abstract: According to one embodiment, a memory system includes a nonvolatile memory and a controller. The controller acquires, from a host, write data having the same first size as a data write unit of the nonvolatile memory and obtained by dividing write data associated with one write command having a first identifier indicating a first write destination block in a plurality of write destination blocks into a plurality of write data or combining write data associated with two or more write commands having the first identifier. The controller writes the acquired write data having the first size to the first write destination block by a first write operation.

Abstract: Systems, methods and apparatus to determine a programming mode of a set of memory cells without having bit values stored in the memory cells to include an identifier of the programming mode. During the test of which of the memory cells in the set is in a lowest voltage region, which is a common operation for reading the memory cells programmed in different mode, the statistics of the memory cells found to be in the lowest voltage region can be compared to the known, different behaviors of the memory cell set programmed in different modes. A match with the behavior of one of the modes can be used to identify the matching mode as the programming mode of the set of memory cells.

Abstract: A semiconductor device may be provided. The semiconductor device may be configured to shift storage positions of data and error information on the data to store the data into shifted storage positions based on the address signals having a certain combination being inputted a predetermined number of times.

Abstract: A system for providing system level sleep state power savings includes a plurality of memory channels and corresponding plurality of memories coupled to respective memory channels. The system includes one or more processors operative to receive information indicating that a system level sleep state is to be entered and in response to receiving the system level sleep indication, moves data stored in at least a first of the plurality of memories to at least a second of the plurality of memories. In some implementations, in response to moving the data to the second memory, the processor causes power management logic to shut off power to: at least the first memory, to a corresponding first physical layer device operatively coupled to the first memory and to a first memory controller operatively coupled to the first memory and place the second memory in a self-refresh mode of operation.

Abstract: A communication device includes a radio transceiver and a processor. The radio transceiver is configured to transmit or receive wireless signals and includes a collision detection device. The collision detection device is configured to detect energy in a wireless communication channel during a first time interval before a packet is transmitted by the radio transceiver and accordingly generate a detection result. The first time interval covers a period of time for the radio transceiver to switch from a receiving state to a transmitting state. The processor is configured to adjust at least one transmission parameter according to the detection result.

Abstract: An embodiment may involve a network interface configured to capture data packets into a binary format and a non-volatile memory configured to temporarily store the data packets received by way of the network interface. The embodiment may also involve a first array of processing elements each configured to independently and asynchronously: (i) read a chunk of data packets from the non-volatile memory, (ii) identify flows of data packets within the chunk, and (iii) generate flow representations for the flows. The embodiment may also involve a second array of processing elements configured to: (i) receive the flow representations from the first array of processing elements, (ii) identify and aggregate common flows across the flow representations into an aggregated flow representation, (iii) based on a filter specification, remove one or more of the flows from the aggregated flow representation, and (iv) write information from the aggregated flow representation to the database.

Abstract: A memory module includes arrays of memory devices each having a data bus coupled to the data bus of a host memory channel by means of a switching tree. The switching tree is a tree of multiplexers that are controlled to couple the data lines of a single array to the data bus. In some embodiments, a first portion of the chip enable (CE) lines of a memory module are used to enable arrays of memory devices and a second portion are used to control the switching tree. The first portion may control a switching tree coupling the first portion to the enable inputs of the arrays.

Abstract: A semiconductor device using a programming unit with is provided. A highly reliable semiconductor device using the programming unit is provided. A highly integrated semiconductor device using the programming unit is provided. In a semiconductor circuit having a function of changing a structure of connections between logic cells such as PLDs, connection and disconnection between the logic cells or power supply to the logic cells is controlled by a programming unit using an insulated gate field-effect transistor with a small amount of off-state current or leakage current. A transfer gate circuit may be provided in the programming unit. To lower driving voltage, a capacitor may be provided in the programming unit and the potential of the capacitor may be changed during configuration and during operation.

Abstract: A storage array for computational memory cells formed as a memory/processing array provides storage of the data without using the more complicated computational memory cells for storage. The storage array may have multiple columns of the storage cells coupled to a column of the computational memory cells. The storage array may have ECC circuitry.

Abstract: An SRAM includes multiple memory cells, each memory cell includes a data storage unit; a data I/O control adapted to input data to, and output data from, a data line (BL); and multiple access controls respectively connected to at least two access control lines (WL's) and adapted to enable and disable the data input and output from the at least two WL's (WX and WY). The access controls are configured to permit data input only when both WL's are in their respective states that permit data input. A method of writing to a group of SRAM cells include sending a first write-enable signal to the cells via a first WL, sending a group of respective second write-enable signals to the respective cells, and, for each of the cells, preventing writing data to the cell if either of the first write-enable signal and respective second write enable signal is in a disable-state.

Abstract: A non-volatile memory device includes an upper semiconductor layer including a first metal pad and vertically stacked on a lower semiconductor layer. The upper semiconductor layer includes a first memory group spaced apart from a second memory group in a first horizontal direction by a separation region, and the lower semiconductor layer includes a second metal and a bypass circuit underlying at least a portion of the separation region and configured to selectively connect a first bit line of the first memory group with a second bit line of the second memory group. The upper semiconductor layer is vertically connected to the lower semiconductor layer by the first metal pad and the second metal pad.

Abstract: It discloses a technical solution of the present disclosure partitions a high-speed data code stream into a plurality of sequentially arranged data blocks so as to write the data blocks sequentially to a circular cache. The circular cache is comprised of N cache segments that share a write pointer, each cache segment owning an independent read pointer. The data blocks are sequentially written into the N cache segments; data will be continuously written to the 1st cache segment; data will be read from the cache segment at a relatively low rate and written to a corresponding SD card, thereby implementing data speed reduction; a controller will integrate the disordered data into a same SD card following the original arrangement order, thereby completing all data storage work.

Abstract: An apparatus includes a memory component, a delay component, and a command component coupled to the delay component. The command component can be configured to enter a received command associated with accessing a physical address in the memory component into an execution queue and mark the command as active. The command component can be configured to send the active command to the memory component to be executed. The command component can be configured to clear the active command from the execution queue in response to receiving a message from the memory component, via the delay component, indicating the active command has been executed. The delay component can be configured to delay the message from the memory component a particular period of time before sending the message to the command component.

Abstract: A semiconductor device includes a flag pipe, a pattern mode control circuit, and a data copy control circuit. The flag pipe is configured to latch a pattern mode flag, a first pattern control flag, a second pattern control flag, a data copy flag, and an enlargement data copy flag based on a pipe input control signal and output a delayed pattern mode flag, a first delayed pattern control flag, a second delayed pattern control flag, and a synthesis data copy flag based on a pipe output control signal. The pattern mode control circuit is configured to set a first data pattern or a second data pattern based on the delayed pattern mode flag, the first delayed pattern control flag, and the second delayed pattern control flag. The data copy control circuit is configured to copy data inputted through a first data pad onto a data path electrically connected to a second data pad based on the synthesis data copy flag.

Abstract: A non-volatile memory includes a memory cell array, an amplifying circuit and a first multiplexer. The memory cell array includes m×n memory cells. The memory cell array is connected with a control line, m word lines and n local bit lines, wherein m and n are positive integers. The amplifying circuit includes n sensing elements. The n sensing elements are respectively connected between the n local bit lines and n read bit lines. The first multiplexer is connected with the n local bit lines and the n read bit lines. According to a first select signal, the first multiplexer selects one of the n local bit lines to be connected with a first main bit line and selects one of the n read bit lines to be connected with a first main read bit line.

Abstract: A computer-implemented method, according to one embodiment, includes: receiving a data access command which corresponds to data stored on NVRAM at a logical block address, and using content-addressable memory (CAM) to determine whether the logical block address corresponds to an active read modify write operation. In response to determining that the logical block address corresponds to an active read modify write operation, the data access command is satisfied using a first procedure. However, in response to determining that the logical block address does not correspond to an active read modify write operation, the data access command is satisfied using a second procedure. Moreover, using the CAM to determine whether the logical block address corresponds to an active read modify write operation is completed in a single clock cycle of the CAM.

Abstract: Control circuitry may operate to refresh memory banks and determine that a memory bank was not refreshed within a threshold time duration from the current time. The control circuitry may extend a duration of an operational mode in response to determining that the memory bank was not refreshed within the threshold time duration. In response to extending the duration of the operational mode, the control circuitry may refresh the second memory bank without refreshing the first memory bank.

Abstract: A bias circuit includes a charging current reproduce unit, a cell current reproduce unit, a current comparator, and a bit line bias generator. The charging current reproduce unit generates a charging reference voltage according to a charging current flowing through a voltage bias transistor. The cell current reproduce unit generates a cell reference voltage according to a cell current flowing through a common source transistor. The current comparator includes a first current generator for generating a replica charging current according to the charging reference voltage, and a second current generator for generating a replica cell current according to the cell reference voltage. The bit line bias generator generates a bit line bias voltage to control a page buffer for charging a bit line according to a difference between the replica charging current and the replica cell current.

Abstract: Methods, systems, and devices for word line capacitance balancing are described. A memory device may include a set of memory tiles, where one or more memory tiles may be located at a boundary of the set. Each boundary memory tile may have a word line coupled with a driver and a subarray of memory cells, and may also include a load balancing component (e.g., a capacitive component) coupled with the driver. In some examples, the load balancing component may be coupled with an output line of the driver (such as a word line) or an input of the driver (such as a line providing a source signal). The load balancing component may adapt a load output from the driver to the subarray of memory cells such that the load of the memory tile at the boundary may be similar to the load of other memory tiles not at the boundary.

Abstract: Subject matter disclosed herein relates to techniques to read memory in a continuous fashion.

Abstract: In one embodiment, a matrix operation may be performed to reorder a plurality of dimensions of an input matrix stored in two-dimensional memory. Data associated with the input matrix may be accessed using one or more strided memory operations, wherein the one or more strided memory operations are configured to access the two-dimensional memory at a plurality of locations that are separated by a particular interval. The data accessed using the one or more strided memory operations may be stored in a result matrix, wherein the data accessed using each strided memory operation is stored in the result matrix in non-transpose form or transpose form.

Abstract: An SRAM device has a voltage input terminal configured to receive a first signal at a first voltage level. A level shifter is connected to the voltage input terminal to receive the first signal, and the level shifter is configured to output a second signal at a second voltage level higher than the first voltage level. A memory cell has a word line and a bit line. The word line is connected to the output terminal of the level shifter to selectively receive the second signal at the second voltage level, and the bit line is connected to the voltage input terminal to selectively receive the first signal at the first voltage level. A sense amplifier is connected to the bit line and is configured to provide an output of the memory cell. The sense amplifier has a sense amplifier input connected to the output terminal of the level shifter to selectively receive the second signal at the second voltage level.

Abstract: A circuit for reducing dynamic power in SRAM and methods for using the same are disclosed. In one embodiment, a circuit for reducing dynamic power in SRAM includes a plurality of memory blocks, which includes a plurality memory banks, which in turn includes a plurality bit cells; a set of memory bank signal lines; a set of memory block signal lines shared across the plurality of memory banks in the memory block; a bridge circuit couple between the set of memory bank signal lines and the set of memory block signal lines; a set of sense amplifiers corresponding to the set of memory block signal lines, where the set of sense amplifiers are shared among the plurality of memory banks in the memory block; and a controller configured to control an access of one or more bit cells in the plurality bit cells.

Abstract: The present disclosure is related to a memory circuit. The memory includes a memory controller and a memory interface coupled between the memory controller and a memory device. The memory controller is configured to generate an output signal that is transmitted to the memory device. The memory interface includes a feedback path configured to receive the output signal and generates a feedback signal in response to the output signal and a variable reference voltage. The memory controller further includes a data register so as to sample the feedback signal in response to a clock signal having a phase with an adjustable shift.

Abstract: This disclosure provides for host-controller cooperation in managing NAND flash memory. The controller maintains information for each erase unit which tracks memory usage. This information assists the host in making decisions about specific operations, for example, initiating garbage collection, space reclamation, wear leveling or other operations. For example, metadata can be provided to the host identifying whether each page of an erase unit has been released, and the host can specifically then command each of consolidation and erase using direct addressing. By redefining host-controller responsibilities in this manner, much of the overhead association with FTL functions can be substantially removed from the memory controller, with the host directly specifying physical addresses. This reduces performance unpredictability and overhead, thereby facilitating integration of solid state drives (SSDs) with other forms of storage.

Abstract: A distributed storage system stores a storage volume as segments that are allocated as needed and assigned VSIDs according to a monotonically increasing counter. The storage volume may be provisioned by an orchestration layer that manages the storage volumes as well as containers executing executable components of the storage volume. The storage volume may be replicated, such as by replicating slices of the storage volume. A primary copy of the slice may be moved from one node to another within the distributed storage system by designating it as a replica, creating a new replica at the new location which is then brought current. The new replica is then designated as the primary replica and the former primary replica may be deleted. A non-replicated storage volume may be converted to a replicated storage volume and vice versa.

Abstract: Disclosed are systems and methods involving memory-side write training to improve data valid window. In one implementation, a method for performing memory-side write training may comprise delaying a rising edge or a falling edge of a first data signal, delaying a rising edge or a falling edge of a second data signal, and aligning the two adjusted signals to reduce a window of time that the data signals are not valid and thereby improve or optimize the data valid window (DVW) of a memory array. According to implementations herein, various edges of data signals and clock signals may be adjusted or delayed via dedicated trim cells or circuitry present in the data paths located on the memory side of a system.

Abstract: An apparatus and method for timestamping data packets are provided. The apparatus includes an input bit counter responsive to input bits entering a physical layer (PHY) device and an output bit counter responsive to output bits transmitted by the PHY device. A timestamp for an incoming bit is calculated based on a number of bits awaiting transmission by the PHY device at the time of arrival of the incoming bit. The number of bits awaiting transmission by the PHY device is determined based on the first count and the second count.

Abstract: A memory device includes a nonvolatile memory unit, a write buffer, and a controller. The controller is configured to receive a write command from a host, send a permission signal to the host after the write command is received, receive write data associated with a write command from the host in response to the permission signal, store the write data in the write buffer, and transfer the write data stored in the write buffer to the nonvolatile memory unit. The controller controls a timing of transmitting the permission signal, such that the write buffer is full for no longer than a predetermined length of time.

Abstract: A processing system employs an expandable memory buffer that supports enlarging the memory buffer when the processing system generates a large number of long latency memory transactions. The hybrid structure of the memory buffer allows a memory controller of the processing system to store a larger number of memory transactions while still maintaining adequate transaction throughput and also ensuring a relatively small buffer footprint and power consumption. Further, the hybrid structure allows different portions of the buffer to be placed on separate integrated circuit dies, which in turn allows the memory controller to be used in a wide variety of integrated circuit configurations, including configurations that use only one portion of the memory buffer.

Abstract: A synchronous differential memory interconnect may include a bidirectional differential data signal bus, a unidirectional differential command and address bus, and a differential clock signal. Memory read and write data may be transmitted over the data signal bus in a serial fashion.

Abstract: The present invention relates to a method of performing a write access phase for a memory device and comprising: transferring a write data from a local input and output line to a bit line to write the data into a memory cell via the bit line by activating a column switch provided between the bit line and the local input and output line during a first period; and transferring a read data read out from the memory cell to the local input and output line via the bit line by activating the column switch during a second period; wherein the first period is longer than the second period.

Abstract: A memory system according to an embodiment includes a semiconductor memory and a memory controller. The semiconductor memory includes memory cells and a sequencer. Each of the memory cells stores first data when it has a first threshold voltage, and stores second data when it has a second threshold voltage. The sequencer performs a first write operation for write data. In the first write operation, the sequencer executes a program loop repeatedly and terminates the first write operation, when the verify operation for the first data has passed and the verify operation for the second data has not passed. The sequencer performs a second write operation for the write data based on a first command from the memory controller after the first write operation is terminated.

Abstract: A semiconductor chip comprising memory controller circuitry having interface circuitry to couple to a memory channel. The memory controller includes first logic circuitry to implement a first memory channel protocol on the memory channel. The first memory channel protocol is specific to a first volatile system memory technology. The interface also includes second logic circuitry to implement a second memory channel protocol on the memory channel. The second memory channel protocol is specific to a second non volatile system memory technology. The second memory channel protocol is a transactional protocol.

Abstract: A memory system is disclosed, comprising a primary memory module, a secondary memory module, and a controller. The controller is configured to identify addresses in the primary memory module requiring correction, and is further configured to receive a memory access request identifying an address in the primary memory module. The controller is configured to determine whether the address is identified as requiring correction and, if it is not, to direct the memory access request to the primary memory module. If the address is identified as requiring correction, the controller is configured to direct the memory access request to the secondary memory module.

Abstract: Apparatuses and methods of for refresh control of a semiconductor device are described. An example apparatus includes a command control circuit that provides a plurality of pulses on a first control signal in series responsive to a plurality of refresh commands issued in series; a signal generation circuit that produces a plurality of pulses on a second control signal in sequence; and a refresh control circuit that receives two or more of the plurality of pulses on the first control signal during a period of time between one pulse and a succeeding pulse of the plurality of pulses on the second control signal, disables refresh operations responsive to at least one of the two or more of the plurality of first control signal and executes a refresh operation responsive to remaining one or more pulses of the two or more of the plurality of pulses on the first control signal.