Electron Beam Patents (Class 365/217)
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Patent number: 9785572Abstract: This disclosure provides techniques hierarchical address virtualization within a memory controller and configurable block device allocation. By performing address translation only at select hierarchical levels, a memory controller can be designed to have predictable I/O latency, with brief or otherwise negligible logical-to-physical address translation time. In one embodiment, address transition may be implemented entirely with logical gates and look-up tables of a memory controller integrated circuit, without requiring processor cycles. The disclosed virtualization scheme also provides for flexibility in customizing the configuration of virtual storage devices, to present nearly any desired configuration to a host or client.Type: GrantFiled: March 18, 2016Date of Patent: October 10, 2017Assignee: Radian Memory Systems, Inc.Inventors: Robert Lercari, Alan Chen, Mike Jadon, Craig Robertson, Andrey V. Kuzmin
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Patent number: 7667996Abstract: The scale of the devices in a diode array storage device, and their cost, are reduced by changing the semiconductor based diodes in the storage array to cold cathode, field emitter based devices. The field emitters and a field emitter array may be fabricated utilizing a topography-based lithographic technique.Type: GrantFiled: February 15, 2007Date of Patent: February 23, 2010Assignee: Contour Semiconductor, Inc.Inventor: Daniel R. Shepard
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Patent number: 7502246Abstract: A ballistic memory cell structure employing ballistic transistor technology for switching between a read state and a store state is disclosed. The memory cell structure includes substrate structures forming a side wall and a main chamber for defining a linear ballistic channel between the two. The main chamber is formed to include a deflection channel with deflective surfaces to deflect an electron emitted from an electron source into the memory cell structure. Deflection controllers are coupled to the substrate structures for generating biasing fields that adjust the trajectory of electrons flowing through the linear ballistic channel and the deflection channel. Logic output terminals are positioned beyond channel exits for registering exiting electrons and determining a read or store state.Type: GrantFiled: July 9, 2008Date of Patent: March 10, 2009Assignee: International Business Machines CorporationInventors: David Daniel Chudy, Michael G. Lisanke, Cristian Medina
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Patent number: 7342817Abstract: A system for writing data using an electron beam to change the structure of a small section of a storage medium and includes at least one focused electron beam source. The duration of a write cycle of the focused electron beam source is controlled at least in part on an estimated or measured amount of charge transmitted by the focused electron beam source to the storage medium during the write cycle.Type: GrantFiled: April 6, 2005Date of Patent: March 11, 2008Assignee: Hewlett-Packard Development Company, L.P.Inventors: Alexander Govyadinov, Curt Van Lydegraf, David Schut
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Patent number: 7085151Abstract: A storage device and a storage system employing the storage device. In one embodiment, the storage device comprises an electron emitter and a storage medium comprising an information layer having at least a first state and a second state for storing information. The storage device comprises a resistance measurement system coupled to the storage medium for reading the information stored at the information layer by measuring resistance to determine a state of a storage area on the information layer.Type: GrantFiled: January 13, 2004Date of Patent: August 1, 2006Assignee: Hewlett-Packard Development Company, L.P.Inventors: Gary Ray Ashton, Robert Newton Bicknell
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Patent number: 7049158Abstract: A method is disclosed for creating an emitter having a flat cathode emission surface: First a protective layer that is conductive is formed on the flat cathode emission surface. Then an electronic lens structure is created over the protective layer. Finally, the protective layer is etched to expose the flat cathode emission surface.Type: GrantFiled: October 15, 2003Date of Patent: May 23, 2006Assignee: Hewlett-Packard Development Company, L.P.Inventors: Zhizhang Chen, Paul J. Benning, Sriram Ramamoorthi, Thomas Novet
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Patent number: 6987722Abstract: Methods for storing data are provided. Preferably, the method includes the steps of: providing a data storage device, and preventing an emitter associated with a first data cluster of the data storage device from writing data to another one of the data clusters. Data storage devices also are provided.Type: GrantFiled: October 28, 2003Date of Patent: January 17, 2006Assignee: Hewlett-Packard Development Company, L.P.Inventor: J. Craig Raese
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Patent number: 6947311Abstract: This invention relates to the controlled two-dimensional structural transition of a dipole monolayer at a metal, semi-conducting or insulating interface. The dipole monolayer consists of objects/molecules with a permanent electric dipole moment. A transition between the structures of the molecular layer can be performed locally and reversibly by applying an electrical field and the structures/patterns can be reversibly switched many times between two different structures/states. Both of the two structures, the ordered and the disordered structures, are intrinsically stable without the presence of the switching electrical field. This controlled switch of the local layer structure can be used to change layer properties (i.e., mechanical, electrical, optical properties). The controlled reversible modifications of the dipole monolayer structures are usable as bit assignments in data storage applications for example.Type: GrantFiled: June 9, 2004Date of Patent: September 20, 2005Assignee: University of BaselInventors: Simon Berner, Silvia Schintke, Luca Ramoino, Michael de Wild, Thomas A. Jung
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Patent number: 6912148Abstract: A system for writing data to and reading data from a magnetic semiconductor memory utilizing a spin polarized electron beam. The magnetic semiconductor memory comprises a plurality of storage locations, each storage location includes a magnetic material and a layer of semiconductor material capable of emitting photons. The method of reading data from the magnetic semiconductor memory comprising steps of directing a spin-polarized electron beam at the magnetic semiconductor memory, and detecting the light emission state of the semiconductor layer from the magnetic semiconductor memory.Type: GrantFiled: July 21, 2003Date of Patent: June 28, 2005Assignee: Intel CorporationInventors: Eric C. Hannah, Michael A. Brown
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Patent number: 6806488Abstract: An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer is formed on the tunneling layer. A conductive layer is partially disposed on the cathode layer and partially on the insulator layer if present. The conductive layer defines an opening to provide a surface for energy emissions of electrons and/or photons. Preferably but optionally, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.Type: GrantFiled: March 13, 2003Date of Patent: October 19, 2004Assignee: Hewlett-Packard Development Company, L.P.Inventors: Sriram Ramamoorthi, Zhizhang Chen
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Patent number: 6700853Abstract: Methods for storing data are provided. Preferably, the method includes the steps of: providing a data storage device, and preventing an emitter associated with a first data cluster of the data storage device from writing data to another one of the data clusters. Data storage devices also are provided.Type: GrantFiled: July 20, 2001Date of Patent: March 2, 2004Assignee: Hewlett-Packard Development Company, LP.Inventor: J. Craig Raese
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Patent number: 6542400Abstract: A molecular memory system that includes a protective layer that is disposed over a molecular recording layer is described. The protective layer enables a scanning probe to write information to and read information from a molecular memory element by direct electrical contact without substantial risk of damage to either the scanning probe or the molecular recording medium. In this way, the invention avoids the high emission currents, which may damage the probe electrode or the recording media, or both, and avoids other difficulties often associated molecular memory systems with non-contacting probe electrodes.Type: GrantFiled: March 27, 2001Date of Patent: April 1, 2003Assignee: Hewlett-Packard Development Company LPInventors: Yong Chen, Robert G. Walmsley
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Patent number: 6501676Abstract: A method of storing and accessing data utiliaing two-terminal static memory cells made from semiconductor quantum dots. Each quantum dot is approximately 10 nm in dimension so as to comprise approximately 1000-10,000 atoms, and each memory cell has in a volume of approximately 6.4×107 cubic Angstroms, thereby corresponding to about 300,000 atoms. In use one of at least two possible stable states is set in the static memory cell by application of a D.C. voltage across the two terminals. The stable state is then monitored by application of A.C. voltage across the two terminals while monitoring the resulting A.C. current flow.Type: GrantFiled: June 12, 2001Date of Patent: December 31, 2002Assignee: The Board of Regents of the University of NebraskaInventors: Supriyo Bandyopadhyay, David Zaretsky
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Patent number: 6392914Abstract: A nonlinear coupling oscillator array is configured in such a manner that, for example, two layers in each of which a number of quantum dots as oscillators are arranged two-dimensionally are laid one on another. Adjacent quantum dots in the upper layer have tunnel coupling that exhibits a nonlinear current-voltage characteristic. The quantum dots in the upper layer receive an input of initial data/bias current, and each quantum dot in the upper layer is coupled with one quantum dot in the lower layer via a gate function having a time constant. Adjacent quantum dots in the lower layer do not interact with each other and the quantum dots in the lower layer are connected to the ground. For example, initial data are input by generating electron-hole pairs by applying light having an intensity profile corresponding to data, and injecting resulting electrons into the quantum dots of the upper layer.Type: GrantFiled: December 14, 1998Date of Patent: May 21, 2002Assignee: Sony CorporationInventors: Yoshihiko Kuroki, Yoshifumi Mori, Ryuichi Ugajin
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Patent number: 6335899Abstract: A compensation capacitance is utilized in a multiport memory device to compensate for the effect of bit line coupling capacitance. A first compensation capacitance is applied between a read bit line and a write bar bit line, and a second compensation capacitance is applied between a write bit line and a read bar bit line to compensate for the effect of bit line capacitance that adversely affects the differential voltage swing at a the read bit line. In one embodiment, the compensation capacitances are equal to the value of the compensation capacitances. In an alternative embodiment, each compensation capacitance comprises two compensation capacitors additively combined in parallel each having a value of one-half of the coupling capacitance. The compensation capacitance may be variable so that compensation of the coupling capacitance may be optimized after fabrication of the integrated circuit.Type: GrantFiled: April 19, 2000Date of Patent: January 1, 2002Assignee: LSI Logic CorporationInventor: Chang Ho Jung
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Patent number: 6081470Abstract: An all optics type semiconductor image storage apparatus includes a superlative semiconductor device. The superlattice semiconductor device includes a superlattice layer which is formed by alternately laminating a barrier layer and a quantum well layer. The superlattice layer is interposed between two carrier confinement layers, one of which is formed on a surface of a semiconductor substrate. The superlattice semiconductor device has an effect of modulating a light absorbance in the vicinity of an absorption edge by canceling an internal electric field generated by a piezoelectric effect. This piezoelectric effect is due to a distortion occurring when the superlattice layer is formed. An image is stored so that, light incident into the superlattice semiconductor device at a first stable point is substantially transmitted, while light incident into the device at a second stable point is prevented from being substantially transmitted.Type: GrantFiled: April 18, 1997Date of Patent: June 27, 2000Assignee: ATR Optical & Radio Communications Research LaboratoriesInventors: Pablo Vaccaro, Kazuhisa Fujita, Makoto Hosoda, Toshihide Watanabe
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Patent number: 5604706Abstract: A data storage medium comprising a substrate and a data storage layer formed on the substrate. The data storage layer comprises a fixed number of atomic layers of a magnetic material which provide the data storage layer with a magnetic anisotropy perpendicular to a surface of the data storage layer. A data magnetic field is created in the data storage layer. The data magnetic field is polarized either in a first direction corresponding to a first data value or in a second direction corresponding to a second data value. Data is stored in the data storage layer by providing a spin-polarized electron having an electron magnetic field with a direction of polarization corresponding to one of the first and the second data values, and directing the spin-polarized electron at the data magnetic field to impart the direction of polarization of the electron magnetic field to the data magnetic field.Type: GrantFiled: March 23, 1995Date of Patent: February 18, 1997Assignee: TeraStore, Inc.Inventors: Thomas D. Hurt, Scott A. Halpine
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Patent number: 5355127Abstract: In a method and apparatus for transferring information in a form of electron beam, an electron beam detector detects the electron beam, and emission of the electron beam from a predetermined electron beam source is controlled in accordance with a signal from the detector upon detection of the electron beam. In the method and apparatus, a deflection electrode is also used to deflect the electron beams according to an electric or magnetic field to perform charge shifting, logical additions, Logical multiplications, image formation, and the like.Type: GrantFiled: June 24, 1992Date of Patent: October 11, 1994Assignee: Canon Kabushiki KaishaInventors: Fumitaka Kan, Kenji Nakamura, Masanori Takenouchi, Naoji Hayakawa, Isamu Shimoda, Masahiko Okunuki
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Patent number: 5210714Abstract: A distance-controlled tunneling transducer comprises a plurality of tunnel tips arranged in an array at a tunneling distance from an electrically conductive surface of a storage medium. Each tip is attached to a respective cantilever beam permitting the distance between each tip and the surface to be individually pre-adjusted electrostatically. Arranged in juxtaposition with each cantilever beam is an active control circuit for adjusting the tip-to-surface distance during operation of the storage unit, thus preventing crashes of the associated tip into possible asperities on the surface of the recording medium. Each control circuit is designed such that its operating voltage concurrently serves to pre-adjust its associated cantilever beam and to maintain the tip-to-surface distance essentially constant.Type: GrantFiled: March 25, 1991Date of Patent: May 11, 1993Assignee: International Business Machines CorporationInventors: Wolfgang D. Pohl, Conrad W. Schneiker
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Patent number: 5049462Abstract: Information stored in a thin polymer layer is read out in a process wherein information introduced into a thin polymer layer on a metallic or semiconductor layer by electromagnetic or particle rays which produce a permanent change in the properties of the polymer layer in the irradiated areas is read out using surface plasmons.Type: GrantFiled: February 20, 1990Date of Patent: September 17, 1991Assignee: BASF AktiengesellschaftInventors: Dirk Funhoff, Harald Fuchs, Ulrike Licht, Wolfgang Schrepp, Werner Hickel, Wolfgang Knoll, Gerhard Wegner, Gisela Duda
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Patent number: 4867535Abstract: An exposure arrangement for use in a computer-aided design system to produce masks. The arrangement includes a cathode-ray tube which produces an image of the mask on the screen of the tube, and an optical system which projects the image of the mask onto a substrate which is to be exposed. The cathode-ray tube is a high-brightness tube in which the screen is provided with a phosphor which emits in an ultraviolet spectrum and with a cooling circuit for the phosphor. The optical system is designed for use in the ultraviolet spectrum and operates on the ultraviolet image provided by the screen of the high-brightness tube.Type: GrantFiled: October 2, 1986Date of Patent: September 19, 1989Assignee: U.S. Philips CorporationInventor: Valere Duchenois
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Patent number: 4831614Abstract: The storage unit comprises an array of tunnel tips (13) arranged at tunneling distance from a recording surface (2a) of a storage medium (2) which is capable of permitting digital information to be written or read through variations of the tunneling current. The storage medium (2) is attached to the free end of a piezoceramic bendable tube (3). In operation, the free end of the tube (3) is moved in a circular orbit by repetitive sequential energization of oppositely arranged pairs of 90.degree. phase shifted electrodes (4,6 and 5,7). This tube movement causes each tunnel tip (13) to scan a respective unique associated annular area of the storage medium (2). To address a particular concentric track in a particular annular area, tunneling current is applied to the associated tip (13) via respective electrodes (16,18) while, concurrently, a potential is applied via electrodes (4,6 and 5,7) to tube (3) of a magnitude corresponding to the desired orbital diameter for the tube.Type: GrantFiled: March 13, 1987Date of Patent: May 16, 1989Assignee: International Business Machines CorporationInventors: Urs T. Duerig, James K. Gimzewski, Wolfgang D. Pohl
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Patent number: 4760567Abstract: A rapid random accessed electron beam memory system comprises a disc mounted for rotation and supporting an information storage medium. An electron gun is mounted for movement across the disc. The gun has ultra-compactness and extremely low mass, yet is capable of developing a finely focused electron beam probe at high beam current densities. The gun comprises a low-mass field emission cathode, the cathode having an emitting tip and being adapted to receive a predetermined electrical potential to form a high brightness electron source at the tip. An electrostatic focus lens forms a real image of the electron source in the vicinity of the storage medium. The lens comprises a first electrode adapted to receive a predetermined second electrical potential which is positive relative to the potential on the tip and has a value effective to extract electrons from the tip. The electrode defines a relatively small aperture for deforming the diameter of an electron beam which is formed.Type: GrantFiled: August 11, 1986Date of Patent: July 26, 1988Assignee: Electron Beam MemoriesInventor: Albert V. Crewe
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Patent number: 4534016Abstract: A beam-addressed memory system for digital memory recording and reading which comprises an electron beam generating and focusing subsystem, an electron detecting subsystem, electronic control and interface circuit means, and a storage medium consisting essentially of a cross-linkable polymeric film having an implanted surface layer of heavy metal ions.Type: GrantFiled: July 8, 1983Date of Patent: August 6, 1985Assignee: The United States of America as represented by the Secretary of the Air ForceInventors: Conilee G. Kirkpatrick, Michael S. Adler, George E. Possin
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Patent number: 4471270Abstract: This device comprises several charge-transfer shift registers integrated on the same semiconductor substrate and disposed one above the other along the axis Oy. The charge-transfer electrodes are common to all the registers and each package of charges injected under an electrode having received the impact of particles is transferred along axis Ox to underneath a diffused zone common to all the registers what causes currents to flow in two electrodes connected to the ends of the zone diffused along axis Ox.Type: GrantFiled: March 12, 1981Date of Patent: September 11, 1984Assignee: Thomson-CSFInventor: Lucien Guyot
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Patent number: 4450537Abstract: A monolithically integrated read-only memory has a plurality of word lines, read lines which cross the word lines to form intersections, and field effect transistors connected to the read and word lines, these transistors being selectable via the word lines and functioning as coupling elements between the read lines and circuit point carrying a reference potential. Means are provided for selectively altering a charge state of a gate insulating layer of transistors at certain predetermined selected intersections, the altered charge states changing a threshold voltage of the transistor so as to determine whether or not it is employed as a coupling element. Preferably electron beam scanning is employed to change the charge state of the gate.Type: GrantFiled: August 19, 1981Date of Patent: May 22, 1984Assignee: Siemens AktiengesellschaftInventor: William G. Oldham
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Patent number: 4147988Abstract: An electron beam scan conversion method and apparatus based on the gain recovery or "dead" time characteristic of channel electron multipliers. The waveform of an electrical signal is written on the input face of a channel multiplier plate with an electron beam. Then, within the dead time of the written channels (typically about 1-100 msec.), the plate's input face is scanned in a predetermined raster pattern with a constant current beam. During the scanning step, an output signal is derived that corresponds to the difference in emission in response to the scanning beam between the channels in the written area of the plate and those outside that area.Type: GrantFiled: June 2, 1977Date of Patent: April 3, 1979Assignee: Tektronix, Inc.Inventor: Dennis R. Hall
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Patent number: 4146930Abstract: An apparatus for and a method of optically recording or writing data into a thermoplastic layer is disclosed. The recording medium is fabricated as an integral part of the face of a cathode ray tube (CRT) and includes a layer of thermoplastic material that is thermoplastically responsive to a heating light beam having a wavelength within the infrared (IR) range and that is a dielectric capable of storing charges corresponding to a data-containing charging (electron) beam. The thermoplastic layer is first selectively exposed to the charging (electron) beam for spatially selectively electrically charging the exposed surface of the thermoplastic layer and is then softened by the heating (IR) beam causing the charged, softened surface to distort under the forces of the data-bearing charge.Type: GrantFiled: December 5, 1977Date of Patent: March 27, 1979Assignee: Sperry Rand CorporationInventors: Roger W. Honebrink, David S. Lo
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Patent number: 4123797Abstract: A storage system is provided in which digital numbers are read into a memory by periodically sampling a pair of analog input signals and in which the memory is scanned in timed relation to the signal sampling and also in timed relation to the scanning of a cathode ray tube screen in a raster pattern, the scanning spot being brightened when a stored digital number is detected.A pair of digital-to-analog converters are used both in sampling and for raster scanning. In sampling, the outputs thereof are compared with the input signals to control analog-to-digital logic circuits and the inputs thereof are connected through multiplexers to the output of the analog-to-digital logic circuits which operate as successive approximation registers. In raster scanning, the inputs of the digital-to-analog converters are connected to counter sections driven from a high frequency clock one being operative to develop a sawtooth signal to generate a sweep line and the other being operative at a field or frame rate.Type: GrantFiled: March 1, 1977Date of Patent: October 31, 1978Assignee: Magnaflux CorporationInventors: Eric J. Strauts, John J. Flaherty
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Patent number: 4123798Abstract: This invention relates to apparatus and methods for providing a high-density memory for electrical data and more particularly, to such a memory wherein data are represented by patterns of charge written and read by electron beam means at addressed locations.Type: GrantFiled: December 5, 1977Date of Patent: October 31, 1978Assignee: Avco Everett Research Laboratory, Inc.Inventors: Francis J. Cook, Frederick E. Kline
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Patent number: 4122530Abstract: A data recording and readback subsystem for digital computer systems employing random access electron beam memories having an electron beam write/read apparatus for recording data to be stored on a recording member that is subject to fatigue in the eventuality of excessive write/read storage operations at any given physical location on the recording member. The improved method and apparatus for data management comprising systematically permuting the physical location of data stored on the recording member, recording each permutation of the data, deriving signals representative of the number of permutation operations, and combining programmer initiated requests from the computer system central processing unit for data stored in the electron beam memory with the signals representative of the number of permutations to derive an actual physical address signal for application to the electron beam memory for recovery of the requested data.Type: GrantFiled: May 25, 1976Date of Patent: October 24, 1978Assignee: Control Data CorporationInventors: Donald O. Smith, Kenneth J. Harte, Hollister B. Sykes
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Patent number: 4097848Abstract: The invention relates to a readout unit for reading out and displaying at a magnification on a picture screen a fraction of the data stored in a random-access memory consisting of N .times. N simultaneously accessible submemories. The number of picture elements representing the data to be displayed is multiplied until the total number of picture elements required for the display of a picture line is obtained, while the number of picture lines is multiplied until the total number required for presentation on the entire picture screen is reached.Type: GrantFiled: March 3, 1977Date of Patent: June 27, 1978Assignee: Hollandse Signaalapparaten B.V.Inventors: Antoon Hendrikus Brands, Jouke Gietema, Hendrik Cornelis Bleijerveld
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Patent number: RE36603Abstract: A distance-controlled tunneling transducer comprises a plurality of tunnel tips arranged in an array at a tunneling distance from an electrically conductive surface of a storage medium. Each tip is attached to a respective cantilever beam permitting the distance between each tip and the surface to be individually pre-adjusted electrostatically. Arranged in juxtaposition with each cantilever beam is an active control circuit for adjusting the tip-to-surface distance during operation of the storage unit, thus preventing crashes of the associated tip into possible asperities on the surface of the recording medium. Each control circuit is designed such that its operating voltage concurrently serves to pre-adjust its associated cantilever beam and to maintain the tip-to-surface distance essentially constant.Type: GrantFiled: August 20, 1996Date of Patent: March 7, 2000Assignee: International Business Machines Corp.Inventors: Wolfgang D. Pohl, Conrad W. Schneiker