Electron Beam Patents (Class 365/217)
  • Patent number: 9785572
    Abstract: This disclosure provides techniques hierarchical address virtualization within a memory controller and configurable block device allocation. By performing address translation only at select hierarchical levels, a memory controller can be designed to have predictable I/O latency, with brief or otherwise negligible logical-to-physical address translation time. In one embodiment, address transition may be implemented entirely with logical gates and look-up tables of a memory controller integrated circuit, without requiring processor cycles. The disclosed virtualization scheme also provides for flexibility in customizing the configuration of virtual storage devices, to present nearly any desired configuration to a host or client.
    Type: Grant
    Filed: March 18, 2016
    Date of Patent: October 10, 2017
    Assignee: Radian Memory Systems, Inc.
    Inventors: Robert Lercari, Alan Chen, Mike Jadon, Craig Robertson, Andrey V. Kuzmin
  • Patent number: 7667996
    Abstract: The scale of the devices in a diode array storage device, and their cost, are reduced by changing the semiconductor based diodes in the storage array to cold cathode, field emitter based devices. The field emitters and a field emitter array may be fabricated utilizing a topography-based lithographic technique.
    Type: Grant
    Filed: February 15, 2007
    Date of Patent: February 23, 2010
    Assignee: Contour Semiconductor, Inc.
    Inventor: Daniel R. Shepard
  • Patent number: 7502246
    Abstract: A ballistic memory cell structure employing ballistic transistor technology for switching between a read state and a store state is disclosed. The memory cell structure includes substrate structures forming a side wall and a main chamber for defining a linear ballistic channel between the two. The main chamber is formed to include a deflection channel with deflective surfaces to deflect an electron emitted from an electron source into the memory cell structure. Deflection controllers are coupled to the substrate structures for generating biasing fields that adjust the trajectory of electrons flowing through the linear ballistic channel and the deflection channel. Logic output terminals are positioned beyond channel exits for registering exiting electrons and determining a read or store state.
    Type: Grant
    Filed: July 9, 2008
    Date of Patent: March 10, 2009
    Assignee: International Business Machines Corporation
    Inventors: David Daniel Chudy, Michael G. Lisanke, Cristian Medina
  • Patent number: 7342817
    Abstract: A system for writing data using an electron beam to change the structure of a small section of a storage medium and includes at least one focused electron beam source. The duration of a write cycle of the focused electron beam source is controlled at least in part on an estimated or measured amount of charge transmitted by the focused electron beam source to the storage medium during the write cycle.
    Type: Grant
    Filed: April 6, 2005
    Date of Patent: March 11, 2008
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Alexander Govyadinov, Curt Van Lydegraf, David Schut
  • Patent number: 7085151
    Abstract: A storage device and a storage system employing the storage device. In one embodiment, the storage device comprises an electron emitter and a storage medium comprising an information layer having at least a first state and a second state for storing information. The storage device comprises a resistance measurement system coupled to the storage medium for reading the information stored at the information layer by measuring resistance to determine a state of a storage area on the information layer.
    Type: Grant
    Filed: January 13, 2004
    Date of Patent: August 1, 2006
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Gary Ray Ashton, Robert Newton Bicknell
  • Patent number: 7049158
    Abstract: A method is disclosed for creating an emitter having a flat cathode emission surface: First a protective layer that is conductive is formed on the flat cathode emission surface. Then an electronic lens structure is created over the protective layer. Finally, the protective layer is etched to expose the flat cathode emission surface.
    Type: Grant
    Filed: October 15, 2003
    Date of Patent: May 23, 2006
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Zhizhang Chen, Paul J. Benning, Sriram Ramamoorthi, Thomas Novet
  • Patent number: 6987722
    Abstract: Methods for storing data are provided. Preferably, the method includes the steps of: providing a data storage device, and preventing an emitter associated with a first data cluster of the data storage device from writing data to another one of the data clusters. Data storage devices also are provided.
    Type: Grant
    Filed: October 28, 2003
    Date of Patent: January 17, 2006
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventor: J. Craig Raese
  • Patent number: 6947311
    Abstract: This invention relates to the controlled two-dimensional structural transition of a dipole monolayer at a metal, semi-conducting or insulating interface. The dipole monolayer consists of objects/molecules with a permanent electric dipole moment. A transition between the structures of the molecular layer can be performed locally and reversibly by applying an electrical field and the structures/patterns can be reversibly switched many times between two different structures/states. Both of the two structures, the ordered and the disordered structures, are intrinsically stable without the presence of the switching electrical field. This controlled switch of the local layer structure can be used to change layer properties (i.e., mechanical, electrical, optical properties). The controlled reversible modifications of the dipole monolayer structures are usable as bit assignments in data storage applications for example.
    Type: Grant
    Filed: June 9, 2004
    Date of Patent: September 20, 2005
    Assignee: University of Basel
    Inventors: Simon Berner, Silvia Schintke, Luca Ramoino, Michael de Wild, Thomas A. Jung
  • Patent number: 6912148
    Abstract: A system for writing data to and reading data from a magnetic semiconductor memory utilizing a spin polarized electron beam. The magnetic semiconductor memory comprises a plurality of storage locations, each storage location includes a magnetic material and a layer of semiconductor material capable of emitting photons. The method of reading data from the magnetic semiconductor memory comprising steps of directing a spin-polarized electron beam at the magnetic semiconductor memory, and detecting the light emission state of the semiconductor layer from the magnetic semiconductor memory.
    Type: Grant
    Filed: July 21, 2003
    Date of Patent: June 28, 2005
    Assignee: Intel Corporation
    Inventors: Eric C. Hannah, Michael A. Brown
  • Patent number: 6806488
    Abstract: An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer is formed on the tunneling layer. A conductive layer is partially disposed on the cathode layer and partially on the insulator layer if present. The conductive layer defines an opening to provide a surface for energy emissions of electrons and/or photons. Preferably but optionally, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.
    Type: Grant
    Filed: March 13, 2003
    Date of Patent: October 19, 2004
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Sriram Ramamoorthi, Zhizhang Chen
  • Patent number: 6700853
    Abstract: Methods for storing data are provided. Preferably, the method includes the steps of: providing a data storage device, and preventing an emitter associated with a first data cluster of the data storage device from writing data to another one of the data clusters. Data storage devices also are provided.
    Type: Grant
    Filed: July 20, 2001
    Date of Patent: March 2, 2004
    Assignee: Hewlett-Packard Development Company, LP.
    Inventor: J. Craig Raese
  • Patent number: 6542400
    Abstract: A molecular memory system that includes a protective layer that is disposed over a molecular recording layer is described. The protective layer enables a scanning probe to write information to and read information from a molecular memory element by direct electrical contact without substantial risk of damage to either the scanning probe or the molecular recording medium. In this way, the invention avoids the high emission currents, which may damage the probe electrode or the recording media, or both, and avoids other difficulties often associated molecular memory systems with non-contacting probe electrodes.
    Type: Grant
    Filed: March 27, 2001
    Date of Patent: April 1, 2003
    Assignee: Hewlett-Packard Development Company LP
    Inventors: Yong Chen, Robert G. Walmsley
  • Patent number: 6501676
    Abstract: A method of storing and accessing data utiliaing two-terminal static memory cells made from semiconductor quantum dots. Each quantum dot is approximately 10 nm in dimension so as to comprise approximately 1000-10,000 atoms, and each memory cell has in a volume of approximately 6.4×107 cubic Angstroms, thereby corresponding to about 300,000 atoms. In use one of at least two possible stable states is set in the static memory cell by application of a D.C. voltage across the two terminals. The stable state is then monitored by application of A.C. voltage across the two terminals while monitoring the resulting A.C. current flow.
    Type: Grant
    Filed: June 12, 2001
    Date of Patent: December 31, 2002
    Assignee: The Board of Regents of the University of Nebraska
    Inventors: Supriyo Bandyopadhyay, David Zaretsky
  • Patent number: 6392914
    Abstract: A nonlinear coupling oscillator array is configured in such a manner that, for example, two layers in each of which a number of quantum dots as oscillators are arranged two-dimensionally are laid one on another. Adjacent quantum dots in the upper layer have tunnel coupling that exhibits a nonlinear current-voltage characteristic. The quantum dots in the upper layer receive an input of initial data/bias current, and each quantum dot in the upper layer is coupled with one quantum dot in the lower layer via a gate function having a time constant. Adjacent quantum dots in the lower layer do not interact with each other and the quantum dots in the lower layer are connected to the ground. For example, initial data are input by generating electron-hole pairs by applying light having an intensity profile corresponding to data, and injecting resulting electrons into the quantum dots of the upper layer.
    Type: Grant
    Filed: December 14, 1998
    Date of Patent: May 21, 2002
    Assignee: Sony Corporation
    Inventors: Yoshihiko Kuroki, Yoshifumi Mori, Ryuichi Ugajin
  • Patent number: 6335899
    Abstract: A compensation capacitance is utilized in a multiport memory device to compensate for the effect of bit line coupling capacitance. A first compensation capacitance is applied between a read bit line and a write bar bit line, and a second compensation capacitance is applied between a write bit line and a read bar bit line to compensate for the effect of bit line capacitance that adversely affects the differential voltage swing at a the read bit line. In one embodiment, the compensation capacitances are equal to the value of the compensation capacitances. In an alternative embodiment, each compensation capacitance comprises two compensation capacitors additively combined in parallel each having a value of one-half of the coupling capacitance. The compensation capacitance may be variable so that compensation of the coupling capacitance may be optimized after fabrication of the integrated circuit.
    Type: Grant
    Filed: April 19, 2000
    Date of Patent: January 1, 2002
    Assignee: LSI Logic Corporation
    Inventor: Chang Ho Jung
  • Patent number: 6081470
    Abstract: An all optics type semiconductor image storage apparatus includes a superlative semiconductor device. The superlattice semiconductor device includes a superlattice layer which is formed by alternately laminating a barrier layer and a quantum well layer. The superlattice layer is interposed between two carrier confinement layers, one of which is formed on a surface of a semiconductor substrate. The superlattice semiconductor device has an effect of modulating a light absorbance in the vicinity of an absorption edge by canceling an internal electric field generated by a piezoelectric effect. This piezoelectric effect is due to a distortion occurring when the superlattice layer is formed. An image is stored so that, light incident into the superlattice semiconductor device at a first stable point is substantially transmitted, while light incident into the device at a second stable point is prevented from being substantially transmitted.
    Type: Grant
    Filed: April 18, 1997
    Date of Patent: June 27, 2000
    Assignee: ATR Optical & Radio Communications Research Laboratories
    Inventors: Pablo Vaccaro, Kazuhisa Fujita, Makoto Hosoda, Toshihide Watanabe
  • Patent number: 5604706
    Abstract: A data storage medium comprising a substrate and a data storage layer formed on the substrate. The data storage layer comprises a fixed number of atomic layers of a magnetic material which provide the data storage layer with a magnetic anisotropy perpendicular to a surface of the data storage layer. A data magnetic field is created in the data storage layer. The data magnetic field is polarized either in a first direction corresponding to a first data value or in a second direction corresponding to a second data value. Data is stored in the data storage layer by providing a spin-polarized electron having an electron magnetic field with a direction of polarization corresponding to one of the first and the second data values, and directing the spin-polarized electron at the data magnetic field to impart the direction of polarization of the electron magnetic field to the data magnetic field.
    Type: Grant
    Filed: March 23, 1995
    Date of Patent: February 18, 1997
    Assignee: TeraStore, Inc.
    Inventors: Thomas D. Hurt, Scott A. Halpine
  • Patent number: 5355127
    Abstract: In a method and apparatus for transferring information in a form of electron beam, an electron beam detector detects the electron beam, and emission of the electron beam from a predetermined electron beam source is controlled in accordance with a signal from the detector upon detection of the electron beam. In the method and apparatus, a deflection electrode is also used to deflect the electron beams according to an electric or magnetic field to perform charge shifting, logical additions, Logical multiplications, image formation, and the like.
    Type: Grant
    Filed: June 24, 1992
    Date of Patent: October 11, 1994
    Assignee: Canon Kabushiki Kaisha
    Inventors: Fumitaka Kan, Kenji Nakamura, Masanori Takenouchi, Naoji Hayakawa, Isamu Shimoda, Masahiko Okunuki
  • Patent number: 5210714
    Abstract: A distance-controlled tunneling transducer comprises a plurality of tunnel tips arranged in an array at a tunneling distance from an electrically conductive surface of a storage medium. Each tip is attached to a respective cantilever beam permitting the distance between each tip and the surface to be individually pre-adjusted electrostatically. Arranged in juxtaposition with each cantilever beam is an active control circuit for adjusting the tip-to-surface distance during operation of the storage unit, thus preventing crashes of the associated tip into possible asperities on the surface of the recording medium. Each control circuit is designed such that its operating voltage concurrently serves to pre-adjust its associated cantilever beam and to maintain the tip-to-surface distance essentially constant.
    Type: Grant
    Filed: March 25, 1991
    Date of Patent: May 11, 1993
    Assignee: International Business Machines Corporation
    Inventors: Wolfgang D. Pohl, Conrad W. Schneiker
  • Patent number: 5049462
    Abstract: Information stored in a thin polymer layer is read out in a process wherein information introduced into a thin polymer layer on a metallic or semiconductor layer by electromagnetic or particle rays which produce a permanent change in the properties of the polymer layer in the irradiated areas is read out using surface plasmons.
    Type: Grant
    Filed: February 20, 1990
    Date of Patent: September 17, 1991
    Assignee: BASF Aktiengesellschaft
    Inventors: Dirk Funhoff, Harald Fuchs, Ulrike Licht, Wolfgang Schrepp, Werner Hickel, Wolfgang Knoll, Gerhard Wegner, Gisela Duda
  • Patent number: 4867535
    Abstract: An exposure arrangement for use in a computer-aided design system to produce masks. The arrangement includes a cathode-ray tube which produces an image of the mask on the screen of the tube, and an optical system which projects the image of the mask onto a substrate which is to be exposed. The cathode-ray tube is a high-brightness tube in which the screen is provided with a phosphor which emits in an ultraviolet spectrum and with a cooling circuit for the phosphor. The optical system is designed for use in the ultraviolet spectrum and operates on the ultraviolet image provided by the screen of the high-brightness tube.
    Type: Grant
    Filed: October 2, 1986
    Date of Patent: September 19, 1989
    Assignee: U.S. Philips Corporation
    Inventor: Valere Duchenois
  • Patent number: 4831614
    Abstract: The storage unit comprises an array of tunnel tips (13) arranged at tunneling distance from a recording surface (2a) of a storage medium (2) which is capable of permitting digital information to be written or read through variations of the tunneling current. The storage medium (2) is attached to the free end of a piezoceramic bendable tube (3). In operation, the free end of the tube (3) is moved in a circular orbit by repetitive sequential energization of oppositely arranged pairs of 90.degree. phase shifted electrodes (4,6 and 5,7). This tube movement causes each tunnel tip (13) to scan a respective unique associated annular area of the storage medium (2). To address a particular concentric track in a particular annular area, tunneling current is applied to the associated tip (13) via respective electrodes (16,18) while, concurrently, a potential is applied via electrodes (4,6 and 5,7) to tube (3) of a magnitude corresponding to the desired orbital diameter for the tube.
    Type: Grant
    Filed: March 13, 1987
    Date of Patent: May 16, 1989
    Assignee: International Business Machines Corporation
    Inventors: Urs T. Duerig, James K. Gimzewski, Wolfgang D. Pohl
  • Patent number: 4760567
    Abstract: A rapid random accessed electron beam memory system comprises a disc mounted for rotation and supporting an information storage medium. An electron gun is mounted for movement across the disc. The gun has ultra-compactness and extremely low mass, yet is capable of developing a finely focused electron beam probe at high beam current densities. The gun comprises a low-mass field emission cathode, the cathode having an emitting tip and being adapted to receive a predetermined electrical potential to form a high brightness electron source at the tip. An electrostatic focus lens forms a real image of the electron source in the vicinity of the storage medium. The lens comprises a first electrode adapted to receive a predetermined second electrical potential which is positive relative to the potential on the tip and has a value effective to extract electrons from the tip. The electrode defines a relatively small aperture for deforming the diameter of an electron beam which is formed.
    Type: Grant
    Filed: August 11, 1986
    Date of Patent: July 26, 1988
    Assignee: Electron Beam Memories
    Inventor: Albert V. Crewe
  • Patent number: 4534016
    Abstract: A beam-addressed memory system for digital memory recording and reading which comprises an electron beam generating and focusing subsystem, an electron detecting subsystem, electronic control and interface circuit means, and a storage medium consisting essentially of a cross-linkable polymeric film having an implanted surface layer of heavy metal ions.
    Type: Grant
    Filed: July 8, 1983
    Date of Patent: August 6, 1985
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Conilee G. Kirkpatrick, Michael S. Adler, George E. Possin
  • Patent number: 4471270
    Abstract: This device comprises several charge-transfer shift registers integrated on the same semiconductor substrate and disposed one above the other along the axis Oy. The charge-transfer electrodes are common to all the registers and each package of charges injected under an electrode having received the impact of particles is transferred along axis Ox to underneath a diffused zone common to all the registers what causes currents to flow in two electrodes connected to the ends of the zone diffused along axis Ox.
    Type: Grant
    Filed: March 12, 1981
    Date of Patent: September 11, 1984
    Assignee: Thomson-CSF
    Inventor: Lucien Guyot
  • Patent number: 4450537
    Abstract: A monolithically integrated read-only memory has a plurality of word lines, read lines which cross the word lines to form intersections, and field effect transistors connected to the read and word lines, these transistors being selectable via the word lines and functioning as coupling elements between the read lines and circuit point carrying a reference potential. Means are provided for selectively altering a charge state of a gate insulating layer of transistors at certain predetermined selected intersections, the altered charge states changing a threshold voltage of the transistor so as to determine whether or not it is employed as a coupling element. Preferably electron beam scanning is employed to change the charge state of the gate.
    Type: Grant
    Filed: August 19, 1981
    Date of Patent: May 22, 1984
    Assignee: Siemens Aktiengesellschaft
    Inventor: William G. Oldham
  • Patent number: 4147988
    Abstract: An electron beam scan conversion method and apparatus based on the gain recovery or "dead" time characteristic of channel electron multipliers. The waveform of an electrical signal is written on the input face of a channel multiplier plate with an electron beam. Then, within the dead time of the written channels (typically about 1-100 msec.), the plate's input face is scanned in a predetermined raster pattern with a constant current beam. During the scanning step, an output signal is derived that corresponds to the difference in emission in response to the scanning beam between the channels in the written area of the plate and those outside that area.
    Type: Grant
    Filed: June 2, 1977
    Date of Patent: April 3, 1979
    Assignee: Tektronix, Inc.
    Inventor: Dennis R. Hall
  • Patent number: 4146930
    Abstract: An apparatus for and a method of optically recording or writing data into a thermoplastic layer is disclosed. The recording medium is fabricated as an integral part of the face of a cathode ray tube (CRT) and includes a layer of thermoplastic material that is thermoplastically responsive to a heating light beam having a wavelength within the infrared (IR) range and that is a dielectric capable of storing charges corresponding to a data-containing charging (electron) beam. The thermoplastic layer is first selectively exposed to the charging (electron) beam for spatially selectively electrically charging the exposed surface of the thermoplastic layer and is then softened by the heating (IR) beam causing the charged, softened surface to distort under the forces of the data-bearing charge.
    Type: Grant
    Filed: December 5, 1977
    Date of Patent: March 27, 1979
    Assignee: Sperry Rand Corporation
    Inventors: Roger W. Honebrink, David S. Lo
  • Patent number: 4123797
    Abstract: A storage system is provided in which digital numbers are read into a memory by periodically sampling a pair of analog input signals and in which the memory is scanned in timed relation to the signal sampling and also in timed relation to the scanning of a cathode ray tube screen in a raster pattern, the scanning spot being brightened when a stored digital number is detected.A pair of digital-to-analog converters are used both in sampling and for raster scanning. In sampling, the outputs thereof are compared with the input signals to control analog-to-digital logic circuits and the inputs thereof are connected through multiplexers to the output of the analog-to-digital logic circuits which operate as successive approximation registers. In raster scanning, the inputs of the digital-to-analog converters are connected to counter sections driven from a high frequency clock one being operative to develop a sawtooth signal to generate a sweep line and the other being operative at a field or frame rate.
    Type: Grant
    Filed: March 1, 1977
    Date of Patent: October 31, 1978
    Assignee: Magnaflux Corporation
    Inventors: Eric J. Strauts, John J. Flaherty
  • Patent number: 4123798
    Abstract: This invention relates to apparatus and methods for providing a high-density memory for electrical data and more particularly, to such a memory wherein data are represented by patterns of charge written and read by electron beam means at addressed locations.
    Type: Grant
    Filed: December 5, 1977
    Date of Patent: October 31, 1978
    Assignee: Avco Everett Research Laboratory, Inc.
    Inventors: Francis J. Cook, Frederick E. Kline
  • Patent number: 4122530
    Abstract: A data recording and readback subsystem for digital computer systems employing random access electron beam memories having an electron beam write/read apparatus for recording data to be stored on a recording member that is subject to fatigue in the eventuality of excessive write/read storage operations at any given physical location on the recording member. The improved method and apparatus for data management comprising systematically permuting the physical location of data stored on the recording member, recording each permutation of the data, deriving signals representative of the number of permutation operations, and combining programmer initiated requests from the computer system central processing unit for data stored in the electron beam memory with the signals representative of the number of permutations to derive an actual physical address signal for application to the electron beam memory for recovery of the requested data.
    Type: Grant
    Filed: May 25, 1976
    Date of Patent: October 24, 1978
    Assignee: Control Data Corporation
    Inventors: Donald O. Smith, Kenneth J. Harte, Hollister B. Sykes
  • Patent number: 4097848
    Abstract: The invention relates to a readout unit for reading out and displaying at a magnification on a picture screen a fraction of the data stored in a random-access memory consisting of N .times. N simultaneously accessible submemories. The number of picture elements representing the data to be displayed is multiplied until the total number of picture elements required for the display of a picture line is obtained, while the number of picture lines is multiplied until the total number required for presentation on the entire picture screen is reached.
    Type: Grant
    Filed: March 3, 1977
    Date of Patent: June 27, 1978
    Assignee: Hollandse Signaalapparaten B.V.
    Inventors: Antoon Hendrikus Brands, Jouke Gietema, Hendrik Cornelis Bleijerveld
  • Patent number: RE36603
    Abstract: A distance-controlled tunneling transducer comprises a plurality of tunnel tips arranged in an array at a tunneling distance from an electrically conductive surface of a storage medium. Each tip is attached to a respective cantilever beam permitting the distance between each tip and the surface to be individually pre-adjusted electrostatically. Arranged in juxtaposition with each cantilever beam is an active control circuit for adjusting the tip-to-surface distance during operation of the storage unit, thus preventing crashes of the associated tip into possible asperities on the surface of the recording medium. Each control circuit is designed such that its operating voltage concurrently serves to pre-adjust its associated cantilever beam and to maintain the tip-to-surface distance essentially constant.
    Type: Grant
    Filed: August 20, 1996
    Date of Patent: March 7, 2000
    Assignee: International Business Machines Corp.
    Inventors: Wolfgang D. Pohl, Conrad W. Schneiker