Abstract: A network interface controller (NIC) capable of efficient command management is provided. The NIC can be equipped with a host interface, an arbitration logic block, and a command management logic block. During operation, the host interface can couple the NIC to a host device. The arbitration logic block can select a command queue of the host device for obtaining a command. The command management logic block can determine whether an internal buffer associated with the command queue includes a command. If the internal buffer includes the command, the command management logic block can obtain the command from the internal buffer. On the other hand, if the internal buffer is empty, the command management logic block can obtain the command from the command queue via the host interface.

Abstract: Systems, devices, and methods related to a Deep Learning Accelerator and memory are described. An integrated circuit may be configured to execute instructions with matrix operands and configured with: random access memory configured to store instructions executable by the Deep Learning Accelerator and store matrices of an Artificial Neural Network; a connection between the random access memory and the Deep Learning Accelerator; a first interface to a memory controller of a Central Processing Unit; and a second interface to a direct memory access controller. While the Deep Learning Accelerator is using the random access memory to process current input to the Artificial Neural Network in generating current output from the Artificial Neural Network, the direct memory access controller may concurrently load next input into the random access memory; and at the same time, the Central Processing Unit may concurrently retrieve prior output from the random access memory.

Abstract: Methods and devices related to transferring data between DRAM and SRAM. One method includes activating a first portion of a dynamic random access memory (DRAM), reading data from the first portion of the DRAM, latching the data from the first portion of the DRAM in one or more sense amplifiers, and writing the data from the one or more sense amplifiers to a first portion of a static random access memory (SRAM).

Abstract: Techniques are provided for accessing two memory cells of a memory tile concurrently. A memory tile may include a plurality of self-selecting memory cells addressable using a row decoder and a column decoder. A memory controller may access a first self-selecting memory cell of the memory tile using a first pulse having a first polarity to the first self-selecting memory cell. The memory controller may also access a second self-selecting memory cell of the memory tile concurrently with accessing the first self-selecting memory cell using a second pulse having a second polarity different than the first polarity. The memory controller may determine characteristics of the pulses to mitigate disturbances of unselected self-selecting memory cells of the memory tile.

Abstract: An electronic device includes a command generation circuit configured to generate a refresh command and a driving control signal, which are enabled during an all-bank refresh operation, according to a logic level combination of an internal chip selection signal and an internal command address. The electronic device also includes a buffer control circuit configured to generate, from the refresh command and the driving control signal, a first buffer enable signal for enabling a first group of buffers and a second buffer enable signal for enabling a second group of buffers.

Abstract: A system for hyper-dimensional computing for inference tasks may be provided. The device comprises an item memory for storing hyper-dimensional item vectors, a query transformation unit connected to the item memory, the query transformation unit being adapted for forming a hyper-dimensional query vector from a query input and hyper-dimensional base vectors stored in the item memory, and an associative memory adapted for storing a plurality of hyper-dimensional profile vectors and for determining a distance between the hyper-dimensional query vector and the plurality of hyper-dimensional profile vectors, wherein the item memory and the associative memory are adapted for in-memory computing using memristive devices.

Abstract: Method for determining a resultant data word when accessing memory cells of a memory, comprising the steps: (a) reading a set of memory cells, (b) wherein a first data word and a second data word are determined from the read set of memory cells, wherein each memory cell is assigned a component of the first data word and the corresponding component of the second data word, (c) wherein the first data word and the second data word for the respective memory cell assume a first value if a first comparison with a first reference value and a second comparison with a second reference value show that the two reference values are greater and assume a second value if the first comparison with the first reference value and the second comparison with the second reference value show that the two reference values are smaller, (d) wherein the first data word and the second data word for the respective memory cell assume at least one third value if the conditions according to feature (c) are not satisfied, and (e) determining

Abstract: A computer system includes a processor and a memory. The processor is located on a first circuit board having a first connector. The memory is located on a second circuit board having a second connector. The first circuit board and the second board are physically separated from each other but connect to each other through the connector. The processor and the memory are communicated to each other based on a differential signaling scheme.

Abstract: In an example, an apparatus may have a controller to be coupled to a host, an interface component coupled to the controller, and a plurality of memory devices coupled to the interface component. The interface component may be to cause a memory device of the plurality of memory devices to perform an operation in response to a command from the controller.

Abstract: An integrated circuit, a method of controlling an operation timing of a memory device, an application processor, and a power manager are provided. The application processor includes: a power manager configured to determine a first operating power level, from among a plurality of operating power levels, to determine a first timing margin corresponding to the first operating power level, to generate a first gray code signal indicating the first timing margin, and to output the first gray code signal; and a first memory device configured to adjust an operation timing according to the first timing margin indicated by the first gray code signal, wherein the power manager is configured to provide the first operating power level to the first memory device.

Abstract: A semiconductor memory cell array is provided which includes a first memory cell array area including first group memory cells arranged in a chip in a matrix of rows and columns and having a first operating speed; and a second memory cell array area including second group memory cells arranged in the chip in a matrix of rows and columns and having a second operating speed different from the first operating speed. The first and second memory cell array areas are accessed by addressing of a DRAM controller.

Abstract: Decoded 2n-bit bitcells in memory for storing decoded bits, and related systems and methods are disclosed. In one embodiment, a decoded 2n-bit bitcell containing 2n state nodes is provided. Each state node includes storage node to store decoded bit. Storage node provides bit to read bitline, coupled to decoded word output. Each state node includes active decoded bit input coupled to storage node that receives decoded bit from decoded word to store in storage node in response to write wordline. State node comprised of 2n?1 passive decoded bit inputs, each coupled to one of 2n?1 remaining storage nodes. 2n?1 passive decoded bit inputs receive 2n?1 decoded bits not received by active decoded bit input. State node includes logic that receives 2n?1 decoded bits. Logic retains decoded bit, provides it to passive decoded bit output. Passive decoded word output is coupled to storage node to store decoded bit in storage node.

Abstract: A signal driving device includes a constant current circuit configured to provide a constant current, a first mirror circuit configured to generate a mirror current from the constant current and provide a voltage according to the mirror current of the constant current, a circuit comprising a switch device and configured to provide a driver current, a second mirror circuit configured to generate a mirror current of the driver current and output a voltage that includes a voltage drop caused when the mirror current of the driver current flows through a replica switch device, and a differential amplifier configured to receive the voltage from the first mirror circuit and the voltage from the second mirror circuit to provide a biased voltage for the bias circuit and thereby induce the driver current.

Abstract: A semiconductor device includes: a non-volatile memory unit; a data bus configured to transfer data outputted from the non-volatile memory unit; a selection signal generation unit configured to generate a plurality of selection signals based on a clock; and a plurality of latch sets configured to each be enabled in response to a selection signal that corresponds to the latch set among the selection signals and store the data transferred through the data bus.

Abstract: In one embodiment, a method includes, in response to assertion of a write-enable signal at a memory array that comprises a plurality of words, sequentially and at a first clock frequency writing data to the memory array starting at a beginning of the memory array until the memory array is full. The method includes, independent of the writing of data to the memory array, asynchronously and at a second clock frequency that is slower than the first clock frequency reading data from the memory array based on read addresses received at the memory array.

Abstract: A semiconductor memory device includes a memory cell array having plural memory cells that require a refresh operation when retaining data; a read/write control unit that performs read-access or write-access of memory cell address specified for the memory cell array based on instructions from the outside; a refresh control unit that performs hidden-refresh of memory cells without control from the outside; and a schedule control unit that makes the refresh control unit perform hidden-refresh after the read/write control unit read-accesses the memory cell array, and that also makes the refresh control unit perform hidden-refresh before the read/write access control unit performs write-access.

Abstract: For example, a semiconductor device includes latch circuits, whose input nodes are connected to an input selection circuit and whose output nodes are connected to an output selection circuit; and a control circuit, which controls the input selection circuit and the output selection circuit. The control circuit includes a shift register to generate an input pointer signal and a binary counter to generate an output pointer signal. The input selection circuit selects one of the latch circuits on the basis of a value of the input pointer signal. The output selection circuit selects one of the latch circuits on the basis of a value of the output pointer signal. Therefore, it is possible to prevent a hazard from occurring in the input selection circuit, as well as to reduce the number of signal lines that transmit the output pointer signal.

Abstract: A semiconductor memory device including a flash memory that includes a page, wherein the page includes a plurality of memory cells connected to even bitlines and odd bitlines of the flash memory, and the memory cells are disposed in a plurality of sectors. The semiconductor memory device also includes a memory controller configured to provide the flash memory with a read address that identifies sectors to be read. The flash memory is configured to determine a sequence of even sensing and odd sensing based on the read address and perform the even sensing and the odd sensing according to the determined sequence. In addition, the flash memory is configured to sense data of at least one identified sector that includes memory cells connected to the even bitlines during the even sensing and sense data of at least one identified sector that includes memory cells connected to the odd bitlines during the odd sensing.

Abstract: A semiconductor die having a functional circuit (e.g., a memory array) and a decode circuit suitable for use in a stacked die semiconductor component (e.g., a random access memory component) is described. The decode circuit permits individual die in a stacked die structure to automatically determine their location or position in the stack and, in response to this determination, selectively pass one or more external control signals (e.g., chip select and clock enable signals) to the decode circuit's associated functional circuit based on inter-die connection patterns. This “self-configuring” capability permits all die designated for a specified functionality (e.g., a memory module including four vertically aligned die) to be uniformly or consistently manufactured. This, in turn, can reduce the cost to manufacture stacked die components.

Abstract: A DRAM includes a register storing subsets of row addresses corresponding to rows containing at least one memory cell that is unable to store a data bit during a normal refresh cycle. Each subset includes all but the most significant bit of a corresponding row address. A refresh counter in the DRAM generates refresh row addresses that are used to refresh rows of memory cells. The refresh row addresses are compared to the subsets of row addresses that are stored in the register. In the event of a match, the row of memory cells corresponding to the matching subset of bits is refreshed. The number of refreshes occurring each refresh cycle will depend upon the number of bits in the subset that are omitted from the row address. The memory cells that are unable to retain data bits are identified by a modified sense amplifier.

Abstract: A system and method for performing memory operations in a multi-plane flash memory. Commands and addresses are sequentially provided to the memory for memory operations in memory planes. The memory operations are sequentially initiated and the memory operation for at least one of the memory planes is initiated during the memory operation for another memory plane. In one embodiment, each of a plurality of programming circuits is associated with a respective memory plane and is operable to program data to the respective memory plane in response to programming signals and when it is enabled. Control logic coupled to the plurality of programming circuits generates programming signals in response to the memory receiving program commands and further generates programming enable signals to individually enable each of the programming circuits to respond to the programming signals and stagger programming of data to each of the memory planes.

Abstract: In a method of estimating a self refresh period of a semiconductor memory device according to an exemplary embodiment, a plurality of internal address signals are reset in response to a refresh reset signal. The plurality of internal address signals are sequentially changed synchronously with an oscillation signal. A refresh completion signal is generated based on the plurality of internal address signals. The self refresh period is detected based on the refresh reset signal and the refresh completion signal.

Abstract: The number of fusible links and other circuit components required to provide memory cell redundancy are reduced by sharing physical memory locations among address banks that store memory addresses. Non-trial and error algorithms and techniques determine the number of addresses and the number of identical least significant bit (LSB) values that can share the same physical memory location. By sharing physical locations for identical LSB values, circuit hardware on a memory device (including fusible links and compare circuitry) is reduced. Thus, less die area is needed to provide the same degree of redundancy.

Abstract: According to example embodiments, a semiconductor memory device may include a write voltage generator configured to generate a write voltage to perform the write operation to at least one of a plurality of banks where the write voltage generator generates the write voltage to have a voltage level of a read voltage before the write operation changes to a read operation. The semiconductor device may also include a read voltage generator configured to generate a read voltage to perform the read operation to at least one of the other plurality of banks and/or a plurality of switches configured to switch a voltage applied to at least one of the banks to one of the write voltage and the read voltage in response to a plurality of control signals.

Abstract: A processor including a memory and a control module. The memory has an array of cells. The control module is configured to: determine a number of access cycles along a first word line; determine an extended period based on the number of the access cycles; generate a word line signal to maintain the first word line in an activated state during (i) an initial period and (ii) the extended period; and access a first cell during the extended period. The first cell is connected to the first word line. The control module is further configured to deactivate the word line and maintain the first word line in a deactivated state while accessing a second cell connected to the first word line. The accessing of the second cell is based on a bit line separation provided during the extended period.

Abstract: A voltage memory switch may be formed of an amorphous semiconductor threshold switch and a select device. The amorphous threshold switch may be latched into one of two different current conducting levels. Then, in some embodiments, a relatively dense memory array can be achieved by maintaining an appropriate bias on the cell to prevent it from losing the programmed state.

Abstract: Methods, systems, and devices are described for the implementation of a novel architecture to support download sequencing techniques for circuit configuration data. Sets of configuration data from nonvolatile memory may be sequentially transferred to volatile memory to support reconfigurable circuit elements, for example, for use in a clock generator. Different programmable circuit elements may use configuration data, but have different ramp-up times before stable operation. With early download sequence positioning of configuration data, and corresponding immediacy in initiation of operation, certain clock elements are able to commence initiation of operation while remaining clock elements are provided with configuration data from a latter portion of the download sequence.

Abstract: A semiconductor memory device can output data according to a predetermined data output timing, in spite of a high frequency of system clock, even when a delay locked loop is disabled. The semiconductor memory device includes a delay locked loop configured to perform a delay locking operation on an internal clock to output delay locked clock, and a data output control unit configured to determine a data output timing, according to whether the delay locked loop is enabled or disabled, in response to a read command.

Abstract: A system and method for performing memory operations in a multi-plane flash memory. Commands and addresses are sequentially provided to the memory for memory operations in memory planes. The memory operations are sequentially initiated and the memory operation for at least one of the memory planes is initiated during the memory operation for another memory plane. In one embodiment, each of a plurality of programming circuits is associated with a respective memory plane and is operable to program data to the respective memory plane in response to programming signals and when it is enabled. Control logic coupled to the plurality of programming circuits generates programming signals in response to the memory receiving program commands and further generates programming enable signals to individually enable each of the programming circuits to respond to the programming signals and stagger programming of data to each of the memory planes.

Abstract: A table-based driving circuit for displays that switches between a normal operational mode and a read table block mode. The driving circuit comprises an address sequencer and a memory. The memory comprises the full table of individual sequences, such as interlacing or color-sequential sequence. In the read table mode, the next upcoming addresses are read, i.e. are downloaded, from the memory into an address table register in the address sequencer. In the normal operational mode, the address sequencer generates the addresses for the video data to be stored in the memory or to be displayed.

Abstract: A memory controller for controlling a memory that operates in synchronization with a clock signal, wherein the memory sequentially outputs data of addresses starting from a target address in synchronization with the clock signal after receiving a read command and the target address, the memory controller includes a supply control module that performs a supply process for supplying data inside the memory corresponding to a request address to an external device, in response to a read request designating the request address which is transmitted from the external device, wherein the supply process includes a supply process using a sequential mode, and wherein the supply process using the sequential mode includes a process for acquiring data to be supplied to the external device from the memory in response to read requests by repeatedly stopping and restarting supply of the clock signal without supplying the read command and the target address to the memory, in a case where a plurality of consecutive request addre

Abstract: A semiconductor memory device includes a memory cell array having a plurality of variable resistance memory cells divided into first and second areas. An I/O circuit is configured to access the memory cell array under the control of control logic so as to access the first or second area in response to an external command. The I/O circuit accesses the first area using a memory cell unit and the second area using a page unit.

Abstract: A method of programming data in a NAND flash memory device including at least one even bitline and at least one odd bitline, the method including programming N-bit data into first cells coupled to the at least one even bitline or the at least one odd bitline and programming M-bit data into second cells coupled to the other of the at least one even bitline and the at least one odd bitline, where N is a natural number greater than one and M is a natural number greater than N.

Abstract: A DRAM includes a register storing subsets of row addresses corresponding to rows containing at least one memory cell that is unable to store a data bit during a normal refresh cycle. Each subset includes all but the most significant bit of a corresponding row address. A refresh counter in the DRAM generates refresh row addresses that are used to refresh rows of memory cells. The refresh row addresses are compared to the subsets of row addresses that are stored in the register. In the event of a match, the row of memory cells corresponding to the matching subset of bits is refreshed. The number of refreshes occurring each refresh cycle will depend upon the number of bits in the subset that are omitted from the row address. The memory cells that are unable to retain data bits are identified by a modified sense amplifier.

Abstract: Methods, systems, and devices are described for the implementation of a novel architecture to support download sequencing techniques for circuit configuration data. Sets of configuration data from nonvolatile memory may be sequentially transferred to volatile memory to support reconfigurable circuit elements, for example, for use in a clock generator. Different programmable circuit elements may use configuration data, but have different ramp-up times before stable operation. With early download sequence positioning of configuration data, and corresponding immediacy in initiation of operation, certain clock elements are able to commence initiation of operation while remaining clock elements are provided with configuration data from a latter portion of the download sequence.

Abstract: A semiconductor memory device can control the toggling of signals corresponding to internal addresses during an auto-refresh mode. The semiconductor memory device includes an internal address generator configured to generate a plurality of first word line driving information signals and a plurality of first to seventh address information signals, which are sequentially activated in response to a driving signal and a refresh signal, a toggle controller configured to generate first and second toggle control signals in response to the third to sixth address information signals during an auto-refresh mode or a self-refresh mode, and a driving controller configured to generate a plurality of bit line driving signals and a plurality of second word line driving information signals corresponding to the first to third and seventh address information signals in response to the first and second toggle control signals.

Abstract: The semiconductor integrated circuit device includes: a first latch which can hold an output signal of the X decoder and transfer the signal to the word driver in a post stage subsequent to the X decoder; a second latch which can hold an output signal of the Y decoder and transfer the signal to the column multiplexer in the post stage subsequent to the Y decoder; and a third latch which can hold an output signal of the sense amplifier and transfer the signal to the output buffer in the post stage subsequent to the sense amplifier. The structure makes it possible to pipeline-control a series of processes for reading data stored in the non-volatile semiconductor memory, and enables low-latency access even with access requests from CPUs conflicting.

Abstract: Disclosed is a FIFO peek access device that utilizes a peek signal to access data stored in a FIFO without losing or erasing data. The peek signal is applied to read address logic and prevents the incrementing of the pointers in the peek address logic, so that after a read enable signal is asserted, the same data block can be accessed again on the next read enable signal.

Abstract: A technique to reduce refresh power in a DRAM. In one embodiment, all of the DRAM memory cells are refreshed at a first rate and a subset of the memory cells are refreshed a second rate greater than the first rate. In another embodiment, the DRAM has a refresh controller that generates a refresh address and controls the refresh of the memory cells addressed by the refresh address. A marker memory is used by the refresh controller to determine which of the memory cells requires refreshing at a rate faster than the refresh rate of the remaining memory cells. Testing the DRAM uses a method to determine which of the memory cells are to be refreshed at the faster rate and to store the results in the marker memory.

Abstract: Disclosed herein are a semiconductor memory device and word line addressing method. The semiconductor memory device comprises a memory array comprising a plurality of word lines arranged in a predetermined sequence, and a word line driver adapted to sequentially address the plurality of word lines in a discontinuous manner relative to neighboring word lines. The method comprises addressing a plurality of word lines in a discontinuous manner relative to the predetermined sequence, such that neighboring word lines in the plurality of word lines are not coincidently addressed.

Abstract: Disclosed is a FIFO peek access device that utilizes a peek signal to access data stored in a FIFO without losing or erasing data. The peek signal is applied to read address logic and prevents the incrementing of the pointers in the peek address logic, so that after a read enable signal is asserted, the same data block can be accessed again on the next read enable signal.

Abstract: Source contacts of driver transistors are short-circuited through the use of an internal metal line within a memory cell. This metal line is isolated from memory cells in an adjacent column and extends in a zigzag form in a direction of the columns of memory cells. Individual lines for transmitting the source voltage of driver transistors can be provided for each column, and the source voltage of driver transistors can be adjusted also in units of memory cell columns in the structure of single port memory cell.

Abstract: A semiconductor die having a functional circuit (e.g., a memory array) and a decode circuit suitable for use in a stacked die semiconductor component (e.g., a random access memory component) is described. The decode circuit permits individual die in a stacked die structure to automatically determine their location or position in the stack and, in response to this determination, selectively pass one or more external control signals (e.g., chip select and clock enable signals) to the decode circuit's associated functional circuit based on inter-die connection patterns. This “self-configuring” capability permits all die designated for a specified functionality (e.g., a memory module including four vertically aligned die) to be uniformly or consistently manufactured. This, in turn, can reduce the cost to manufacture stacked die components.

Abstract: A DRAM includes a register storing subsets of row addresses corresponding to rows containing at least one memory cell that is unable to store a data bit during a normal refresh cycle. Each subset includes all but the most significant bit of a corresponding row address. A refresh counter in the DRAM generates refresh row addresses that are used to refresh rows of memory cells. The refresh row addresses are compared to the subsets of row addresses that are stored in the register. In the event of a match, the row of memory cells corresponding to the matching subset of bits is refreshed. The number of refreshes occurring each refresh cycle will depend upon the number of bits in the subset that are omitted from the row address. The memory cells that are unable to retain data bits are identified by a modified sense amplifier.

Abstract: A memory controller for writing data in a first semiconductor memory including a plurality of memory cells having series-connected current paths and charge storage layers includes a host interface which configured to be receivable of first data from a host apparatus, a second semiconductor memory which temporarily holds second data, and an arithmetic unit which generates the second data in accordance with the state of the first semiconductor memory, temporarily holds the second data in the second semiconductor memory, and writes the first and second data in the first semiconductor memory. When writing the second data, the arithmetic unit does not select a word line adjacent to a select gate line, and selects a word line not adjacent to the select gate line.

Abstract: A memory mapping method is provided for writing block data composed of a plurality of lines in first and second memories, each memory including at least two banks of the same number. The method maps the memories such that continuous even-numbered lines are written in different banks of different memories, and continuous odd-numbered lines are written in different banks of different memories when the block data is motion-compensated in a frame mode or a field mode. Accordingly, bank interleaving can be carried out in the respective memories and two memory channels can be simultaneously used to improve bus utilization efficiency and memory channel utilization efficiency.

Abstract: Double refresh executing means is changed in accordance with a manner (distributed refresh or burst refresh) of a refresh command so as to suppress a drop of internal power supply that occurs upon double refresh.

Abstract: Successive data read access with a final address specified is detected by a command mode detecting circuit to set a command mode entry status. In the command mode entry, a command of designating an internal state is made acceptable in accordance with a predetermined external signal. Consequently, a semiconductor memory device that enters a command mode, maintaining compatibility of pins and signal timings with a conventional status memory is provided.

Abstract: A read-only data storage and retrieval device is presented having no moving parts and requiring very low power. Addressing can be accomplished sequentially where the address increments automatically or can be accomplished randomly. High density storage is achieved through the use of a highly symmetric diode matrix that is addressed in both coordinate directions; its symmetry makes the Dual-addressed Rectifier Storage (DRS) Array very scaleable scalable, particularly when made as an integrated circuit. For even greater storage flexibility, multiple digital rectifier storage arrays can be incorporated into the device, one or more of which can be made removable and interchangeable.

Abstract: A read-only data storage and retrieval device is presented having no moving parts and requiring very low power. Addressing can be accomplished sequentially where the address increments automatically or can be accomplished randomly. High density storage is achieved through the use of a highly symmetric diode matrix that is addressed in both coordinate directions; its symmetry makes the Dual-addressed Rectifier Storage (DRS) Array very scaleable, particularly when made as an integrated circuit. For even greater storage flexibility, multiple digital rectifier storage arrays can be incorporated into the device, one or more of which can be made removable and interchangeable.