Abstract: Methods, systems, and devices for a latency indication in a memory system or sub-system are described. An interface controller of a memory system may transmit an indication of a time delay (e.g., a wait signal) to a host in response to receiving an access command from the host. The interface controller may transmit such an indication when a latency associated with performing the access command is likely to be greater than a latency anticipated by the host. The interface controller may determine a time delay based on a status of buffer or a status of memory device, or both. The interface controller may use a pin designated and configured to transmit a command or control information to the host when transmitting a signal including an indication of a time delay. The interface controller may use a quantity, duration, or pattern of pulses to indicate a duration of a time delay.

Abstract: Methods, systems, and devices for dual address encoding for logical-to-physical mapping are described. A memory device may identify a first physical address corresponding to a first logical block address generated by a host device and a second physical address corresponding to a second (consecutive) logical block address generated by a host device. The memory device may store the first physical address and second physical address in a single entry of a logical-to-physical mapping table that corresponds to the first logical block address. The memory device may transmit the logical-to-physical table to the host device for storage at the host device. The host device may subsequently transmit a single read command to the memory device that includes the first physical address and the second physical address based on the logical-to-physical table.

Abstract: A method of cache programming of a NAND flash memory in a triple-level-cell (TLC) mode is provided. The method includes discarding an upper page of a first programming data from a first set of data latches in a plurality of page buffers when a first group of logic states are programmed and verified. The plurality of page buffers include the first, second and third sets of data latches, configured to store the upper page, middle page and lower page of programming data, respectively. The method also includes uploading a lower page of second programming data to a set of cache latches, transferring the lower page of the second programming data from the set of cache latches to the third set of data latches after discarding the lower page of the first programming data, and uploading a middle page of the second programming data to the set of cache latches.

Abstract: A semiconductor apparatus including: a peripheral circuit region and a memory region including a plurality of unit memory blocks coupled to the peripheral circuit region through data lines and control signal lines. The control signal lines having a path configuration configured to equalize a value corresponding to a difference between times required for transferring data from the peripheral circuit region to the plurality of unit memory blocks with another value corresponding to a difference between times required for transferring control signals related to data input/output from the peripheral circuit region to the plurality of unit memory blocks to substantially a same value.

Abstract: A memory device includes a memory cell array including a plurality of memory cells, a plurality of first even page buffers suitable for reading data from first even-numbered memory cells among the plurality of memory cells, and storing the read data, a plurality of first odd page buffers suitable for reading data from first odd-numbered memory cells among the plurality of memory cells, and storing the read data, and a plurality of first cache buffers corresponding to the first even page buffers, suitable for storing data received through a first common node from the first even page buffers, and a plurality of second cache buffers corresponding to the first odd page buffers, and suitable for storing data received through the first common node from the first odd page buffers.

Abstract: Methods, systems, and devices for dual address encoding for logical-to-physical mapping are described. A memory device may identify a first physical address corresponding to a first logical block address generated by a host device and a second physical address corresponding to a second (consecutive) logical block address generated by a host device. The memory device may store the first physical address and second physical address in a single entry of a logical-to-physical mapping table that corresponds to the first logical block address. The memory device may transmit the logical-to-physical table to the host device for storage at the host device. The host device may subsequently transmit a single read command to the memory device that includes the first physical address and the second physical address based on the logical-to-physical table.

Abstract: Memory device including a controller configured to cause the memory device to generate a first clock edge of a first clock signal in response to a first clock edge of a second clock signal; to generate a second, opposite, clock edge of the first clock signal immediately following the first clock edge of the first clock signal in response to a second, opposite, clock edge of the second clock signal immediately following the first clock edge of the second clock signal; and to latch data for output from the memory device in response to the second clock edge of the first clock signal.

Abstract: Systems, apparatuses, and methods related to hierarchical memory are described herein. A hierarchical memory apparatus can be part of a memory system that can leverage persistent memory to store data that is generally stored in a non-persistent memory. An example apparatus includes logic circuitry configured to receive a command indicating that an access to a base address register coupled to the logic circuitry has occurred. The command can be indicative of a data access involving a persistent memory device and/or a non-persistent memory device. The logic circuitry can determine that the access command corresponds to an operation to divert data from the non-persistent memory device to the persistent memory device, generate an interrupt signal, and cause the interrupt signal to be asserted on a host coupleable to the logic circuitry as part of the operation to divert data from the non-persistent memory device to the persistent memory device.

Abstract: Certain aspects of the present disclosure provide apparatus and methods for performing memory read operations. One example method generally includes precharging a plurality of memory columns during a precharging phase of a read access cycle. The method also includes sensing first data stored in a first memory cell of a first memory column of the plurality of memory columns during a memory read phase of the read access cycle, and sensing second data stored in a second memory cell of a second memory column of the plurality of memory columns during the same memory read phase of the read access cycle.

Abstract: Technologies are described herein for adaptive polling based upon demand. A data source is polled for data at a first polling frequency. A request is received for a page or other type of resource that includes the data, and the data is provided in response to the request. Subsequently, the data source is polled for the data at a second polling frequency greater than the first polling frequency. Status messages are also received indicating a status of a display of the page. The polling frequency may be adjusted based on the status messages. For example, the polling frequency may be increased if a status message indicates that a user is viewing the data. The polling frequency may be decreased if a status message indicates that the data is not being viewed or that a page or other type of resource for presenting the data has been closed.

Abstract: A method of operating a memory module can include receiving, at the memory module, an active command and an associated row address that indicates that the active command is directed to a volatile memory device included in the memory module or to a non-volatile memory device included in the memory module. The volatile memory device or the non-volatile memory device can be activated based on the associated row address in response to the active command. Status information can be provided at the memory module indicating readiness of the memory module for receipt of an operation command associated with the active command and the associated row address.

Abstract: Provided are a method and apparatus for a memory module to accept a command in multiple parts. A first half of a command is placed on a bus for a memory module in a first clock cycle. A chip select signal is placed on the bus for the memory module for the first half of the command. A second half of the command is placed on the bus in a second clock cycle following the first clock cycle, wherein the memory module accepts the second half of the command a delay interval from accepting the first half of the command.

Abstract: Systems, methods, and computer programs are disclosed for scheduling memory transactions. An embodiment of a method comprises determining future memory state data of a dynamic random access memory (DRAM) for a predetermined number of future clock cycles. The DRAM is electrically coupled to a system on chip (SoC). Based on the future memory state data, one of a plurality of pending memory transactions is selected that speculatively optimizes DRAM efficiency. The selected memory transaction is sent to a shared cache controller. If the selected memory transaction results in a cache miss, the selected memory transaction is sent to a DRAM controller.

Abstract: A memory device, system, and/or method are provided for performing a page state informing function. The memory device may compare one or more row addresses received along with a command, determine the page open/close state according to a page hit or miss generated as a result of comparison, count read or write commands with respect to pages corresponding to a same row address, and determine the page open/close state according to a read or write command number generated as a result of counting. The memory device may determine a page open/close state with respect to a corresponding page based on a page hit/miss and a read or write command number and output a flag signal. The memory device may provide the page open/close state for each channel. A memory controller may establish different page open/close policies for each channel.

Abstract: A memory device includes an operation having a phase to provide an upper row address from a row address buffer, a phase to combine the upper row address with a lower row address to select data for a row data buffer, and a phase to output the data from the row data buffer, wherein an activate command starts and following activate commands are ignored until a preset time has elapsed.

Abstract: The invention provides a programming method for a NAND-type flash memory capable of reducing the drop in reliability due to data-rewriting. The programming method includes: when a block program mode is executed to perform programming for a plurality of pages in a block, while the data to be programmed is being loaded into a cache memory; and erasing the selected block; and programming the data to be programmed which is loaded into the cache memory to the erased block.

Abstract: Apparatuses, systems, methods, and computer program products are disclosed for controlling a read time of an electronic memory device. A method includes reading data from an integrated circuit of storage using a read time for the integrated circuit of storage. A method includes adjusting a read time for an integrated circuit of storage. A method includes reading data from a same integrated circuit of storage using an adjusted read time for the integrated circuit of storage.

Abstract: A nonvolatile memory device includes a cell array including a plurality of cell strings extending on a substrate in a vertical direction, a page buffer connected to a plurality of bit lines and configured to store sensing data of the cell array in a sensing operation, a voltage generator configured to provide voltages to a plurality of word lines and the plurality of bit lines, and an input/output buffer configured to temporarily store the sensing data received in a data dump from the page buffer and to output the temporarily stored data to an external device. The nonvolatile memory device further includes control logic configured to set a status of the nonvolatile memory device to a ready state after the sensing data is dumped to the input/output buffer and before recovery of the cell array from a bias voltage of the sensing operation is complete.

Abstract: A memory cell array comprises memory cells disposed at intersections of a plurality of first lines disposed in parallel and a plurality of second lines disposed intersecting the first lines. The memory cell includes a variable resistance element. A set operation-dedicated first driver circuit, when executing on the memory cell a set operation for switching a memory cell from a high-resistance state to a low-resistance state, supplies a voltage to the first lines. A reset operation-dedicated first driver circuit, when executing on the memory cell a reset operation for switching the memory cell from a low-resistance state to a high-resistance state, supplies a voltage to the first lines. A length of a wiring line between the set operation-dedicated first driver circuit and the memory cell array is longer compared to a length of a wiring line between the reset operation-dedicated first driver circuit and the memory cell array.

Abstract: A memory module includes memory banks, a local memory controller to access data in the memory banks, and an interface to an external memory controller that is configured to access the memory module. Multiplexing circuitry selectively connects the memory banks to the local memory controller and to the interface to the external memory controller.

Abstract: A semiconductor memory apparatus includes: a memory block including first and second planes; and a reset signal generator configured to generate a first reset signal by logically combining a first plane selection signal and a control pulse signal which pulses after a first programming setup pulse signal pulses during a first programming command cycle, and generate a second reset signal by logically combining a second plane selection signal and the control pulse signal which again pulses after a second programming setup pulse signal pulses during a second programming command cycle after the first programming command cycle. A plurality of first page buffers allocated to the first plane are reset in response to the first reset signal, and a plurality of second page buffers allocated to the second plane are reset in response to the second reset signal.

Abstract: A memory control device that can reduce a power consumption at the time of writing a memory. The memory control device includes a data output buffer circuit that burst-transfers data to a memory device through a data bus, and a mask signal output buffer circuit that outputs, to the memory device, a mask signal indicative of data that prohibits write into a memory cell within the memory device among the data. The data output buffer circuit puts an output node into a high impedance state when the mask signal is indicative of write prohibition.

Abstract: A method (and device) includes producing first data in a page region of a memory, the first data including a first number of memory sets, each of the memory sets having a second number of bits, where the first number is a positive number more than one and the second number is a positive number more than three. After the producing the first data in the page region of the memory, second data is produced in response to the produced first data, the second data having the first number of bits, each of the bits of the second data having a logic value that is determined by a majority of the bits included in a corresponding one of the memory sets.

Abstract: Methods, devices and systems for reducing the quantity of external interconnections of a memory device are disclosed. Implementation of one such method, device and system includes inputting over an address bus a first portion of an address of a next row of memory cells to be activated. The first portion of the address of the next row of memory cells to be activated is embedded in a command related to the previously activated row of memory cells. The next row of memory cells is subsequently activated according to a concurrently received second portion of the address of the next row of memory cells also received over the address bus. The portioning of the address signals can reduce the width of the address bus and, therefore, the number of required respective external interconnections.

Abstract: A semiconductor memory apparatus comprises first and second memory blocks each comprising semiconductor elements coupled to first and second local line groups, a first switching circuit configured to couple a first global line group to the first local line group of the first memory block in response to a block selection signal, a second switching circuit configured to couple a second global line group to the second local line groups of the first and second memory blocks in response to the block selection signal, and a third switching circuit configured to couple the first global line group to the first local line group of the second memory block in response to the block selection signal.

Abstract: An N-dimension addressable memory is disclosed. The memory includes an N-dimension array of bit cells and logic configured to address each bit cell using N-Dimension Addressing (NDA), where N is at least two and the array of bit cells is addressable by N orthogonal address spaces. Each bit cell of the N-dimension addressable memory includes a bit storage element, N word lines, and N bit lines.

Abstract: A method for data storage includes accepting data for storage in an array of analog memory cells, which are arranged in rows associated with respective word lines. At least a first page of the data is stored in a first row of the array, and at least a second page of the data is stored in a second row of the array, having a different word line from the first row. After storing the first and second pages, a third page of the data is stored jointly in the first and second rows.

Abstract: One embodiment of the present invention sets forth a method for accessing non-contiguous locations within a DRAM memory page by sending a first column address command to a first DRAM device using a first subset of pins and sending a second column address command to a second DRAM device using a second subset of repurposed pins. One advantage of the disclosed technique is that it requires minimal additional pins, space, and power consumption. Further, sending multiple column address commands allows for increased granularity of DRAM accesses and therefore more efficient use of pins. Thus, the disclosed technique provides a better approach for accessing non-contiguous locations within a DRAM memory page.

Abstract: A memory has memory cells in a matrix; a first selection unit selecting any of first signal lines in the memory cells, in response to an access request; a second selection unit selecting any of second signal lines in the memory cells, after the first selection unit starts operating; a first voltage generation unit generating a first power supply voltage supplied to the first selection unit; a second voltage generation unit generating a second power supply voltage supplied to the second selection unit, when a start-up signal is active; a switch short-circuiting first and second power supply lines, when a short-circuit signal is active; and a power supply voltage control unit which activates the start-up signal in response to the access request, activates the short-circuit signal after a predetermined time elapses since activation of the start-up signal, deactivates the short-circuit signal and the start-up signal after completion of access operations.

Abstract: Methods, devices and systems for reducing the quantity of external interconnections of a memory device are disclosed. Implementation of one such method, device and system includes inputting over an address bus a first portion of an address of a next row of memory cells to be activated. The first portion of the address of the next row of memory cells to be activated is embedded in a command related to the previously activated row of memory cells. The next row of memory cells is subsequently activated according to a concurrently received second portion of the address of the next row of memory cells also received over the address bus. The portioning of the address signals can reduce the width of the address bus and, therefore, the number of required respective external interconnections.

Abstract: A non-volatile storage system is disclosed that includes a plurality of blocks of non-volatile storage elements, a plurality of word lines connected to the blocks of non-volatile storage elements such that each word line is connected to adjacent blocks of non-volatile storage elements, a plurality of bit lines connected to the blocks of non-volatile storage elements, multiple sets of word lines drivers such that each set of word line drivers is positioned between two adjacent blocks for driving word lines connected to the two adjacent blocks, global data lines, local data lines in selective communication with the bit lines, one or more selection circuits that selectively connect the global data lines to selected local data lines and connect unselected local data lines to one or more unselected bit line signals and control circuitry in communication with the one or more selection circuits and the global data lines.

Abstract: Verification of the address connections of a memory (14) having multiplexed banks rows and columns commences by selecting a first address location having a bank/row/column value and then writing a pattern to a second location corresponding to the first location where one of the column, row, bank addresses could become stuck high or low. A second pattern gets written to the first location and a comparison occurs between the second pattern and first pattern written to the second location. If the data is the same, then that particular row/column/bank addresses is stuck.

Abstract: A semiconductor memory device includes an address controller for storing fail column addresses and sequentially outputting the fail column addresses while a first control signal is activated and a control logic for performing control so that data indicating a program pass is inputted to each of main page buffers associated with the respective fail column addresses outputted from the address controller while the first control signal is activated.

Abstract: An integrated circuit includes a serial peripheral interface memory device. In an embodiment, the memory device includes a clock signal, a plurality of pins, and a configuration register. In an embodiment, the configuration register includes a wait cycle count. The method includes transmitting a read address to the memory device using a first input/output pin and a second input/output pin concurrently. In an embodiment, the read address includes at least a first address bit and a second address bit, the first address bit being transmitted using the first input/output pin, and the second address bit being transmitted using the second input/output pin. The method includes accessing the memory device for data associated with the address and waiting a predetermined number clock cycles associated with the wait cycle count. The method includes transferring the data from the memory device using the first input/output pin and the second input/output pin concurrently.

Abstract: A non-volatile memory device includes first and second memory regions to store data and a memory control unit. Each of the first and second memory regions is configured by a plurality of physical pages. Each of the physical pages is configured by a plurality of regions corresponding to a plurality of logical addresses. The memory control unit performs control of batch erasing and batch writing on every physical page. When a first physical page in the first memory region includes a first region corresponding to a first logical address, which is a target to be written, and when a second physical page in the second memory region includes a second region corresponding to the first logical address, which is a target to be written, the memory control unit selects either the first physical page or the second physical page as a physical page for writing.

Abstract: A flash memory device having at least two bank, where the each bank has an independently configurable page size and core controller. The core controller is local to each bank, and governs memory access operations for the bank that include read, program and erase operations. Each core controller controls timing and activation of row circuits, column circuits, voltage generators, and local input/output path circuits for a corresponding memory access operation of the bank. Concurrent operations are executable in multiple banks to improve performance. Each bank has a page size that is configurable with page size configuration data such that only selected wordlines are activated in response to address data. The configuration data can be loaded into the memory device upon power up for a static page configuration of the bank, or the configuration data can be received with each command to allow for dynamic page configuration of the bank.

Abstract: A semiconductor memory device is configured to have a first memory cell array having a plurality of blocks (cell arrays corresponded to one I/O bit), each block having a plurality of columns and being corresponding respectively to one of data terminals, wherein the blocks being arranged side by side in the column-wise direction, and a second memory cell array configured similarly to the first memory cell array, and is also configured to assign addresses while classifying the even-number-th memory blocks in the first memory cell array and the odd-number-th memory blocks in the second memory cell array into a first set, whereas the odd-number-th memory blocks in the first memory cell array and the even-number-th memory blocks in the second memory cell array into a second set, so as to output data from every other block in each memory cell array upon being accessed with a certain address.

Abstract: A memory system comprises a memory including a plurality of bits arranged as one or more words. Each bit in each word is capable of being programmed either to a particular logical state or to another logical state. A variable data width controller is in communication with the memory. The variable data width controller comprises an adder to determine a programming number of bits in a word to be programmed into a memory. Each bit to be programmed is in the particular logical state. A partitioning block divides the word in to two or more sub-words when the programming number exceeds a maximum number. A switch is in communication with the partitioning block. The switch sequentially provides one or more write pulses. Each write pulse enables a separate communication path between the memory and one of the word and the sub-words.

Abstract: A layout for simultaneously sub-accessible memory modules is disclosed. In one embodiment, a memory module includes a printed circuit board having a plurality of sectors, each sector being electrically isolated from the other sectors and having a multi-layer structure. At least one memory device is attached to each sector, the memory devices being organized into a plurality of memory ranks. A driver is attached to the printed circuit board and is operatively coupled to the memory ranks. The driver is adapted to be coupled to a memory interface of the computer system. Because the sectors are electrically-isolated from adjacent sectors, the memory ranks are either individually or simultaneously, or both individually and simultaneously accessible by the driver so that one or more memory devices on a particular sector may be accessed at one time.

Abstract: Devices and methods of programming memory cells, both SLC and MLC, such as to reduce charge-storage structure to charge-storage structure coupling, are shown and described. Programming of memory cells can include comparing a first page of data to a second page of data, and further programming cells corresponding to the first page of data that will not likely be affected by coupling from programming the second page of data.

Abstract: A semiconductor memory device including a flash memory that includes a page, wherein the page includes a plurality of memory cells connected to even bitlines and odd bitlines of the flash memory, and the memory cells are disposed in a plurality of sectors. The semiconductor memory device also includes a memory controller configured to provide the flash memory with a read address that identifies sectors to be read. The flash memory is configured to determine a sequence of even sensing and odd sensing based on the read address and perform the even sensing and the odd sensing according to the determined sequence. In addition, the flash memory is configured to sense data of at least one identified sector that includes memory cells connected to the even bitlines during the even sensing and sense data of at least one identified sector that includes memory cells connected to the odd bitlines during the odd sensing.

Abstract: In one embodiment, there is provided an electronic apparatus. The apparatus includes: a storage device including a plurality of blocks that are units of data erasure. Each of the blocks includes a plurality of pages that are units of data reading or writing. Each of the pages includes: a data area storing a data; and a redundant area storing order information indicating an order of the data stored in the data area.

Abstract: Embodiments of the inventive concept provide a nonvolatile memory device. The nonvolatile memory device includes a memory cell array, a read/write circuit, and a backup circuit. The memory cell array includes a first memory block including a first word line having first memory cells and a second word line having second memory cells. Each of the first memory cells and second memory cells configured to store first-bit data and second-bit data. The read/write circuit is configured to program data into the first and second memory cells and read data stored in the first and second memory cells. The backup circuit is configured to, after first-bit data are programmed into the first word line, but before second-bit data are programmed into the first word line, store first-bit data stored in the second memory cells of the second word line.

Abstract: An alternate page by page scheme for the multi-state programming of data into a non-volatile memory is presented. Pages of data are written a page at a time onto word lines of the memory. After all of the pages of data are written to a first level of resolution onto one word line, the memory goes back to the adjacent word line (on which all of the pages of data have previously been written the first level of resolution) and refines the accuracy with which the data had been written on this preceding word line. This can reduce the effects on the data of capacitive coupling between the word lines.

Abstract: A burst read control circuit acts as an interface to allow a burst-read capable device to execute burst reads from a page-mode capable memory device. The burst read control circuit coordinates burst read requests from the burst-read capable device and subsequent responses from the page-mode capable memory device by accessing subsequent and contiguous memory locations of the page-mode capable memory device.

Abstract: Methods, devices and systems for reducing the quantity of external interconnections of a memory device are disclosed. Implementation of one such method, device and system includes inputting over an address bus a first portion of an address of a next row of memory cells to be activated. The first portion of the address of the next row of memory cells to be activated is embedded in a command related to the previously activated row of memory cells. The next row of memory cells is subsequently activated according to a concurrently received second portion of the address of the next row of memory cells also received over the address bus. The portioning of the address signals can reduce the width of the address bus and, therefore, the number of required respective external interconnections.

Abstract: A semiconductor memory device comprises: a memory cell group, the memory cell including a number of which is 2n, the n being a positive integer; and a first decoder provided with respect to each of the memory cell groups and a second decoder. The first decoder activates a word line by the memory cell group based upon a first address and an n bit in a second address and the second decoder activates a bit line based upon the second address.

Abstract: A flash memory system for an A/V player, utilizing a two-level round-robin write scheme upon N flash memory planes, enabling the A/V player to be loaded with data at a data throughput essentially N times the write throughput of one of the flash memory planes. The flash chips' memory cores and data registers, and the memory system's write buffers, can be kept fully utilized during data writing.

Abstract: A multi-layered non-volatile memory device and a method of manufacturing the same. The non-volatile memory device may include a plurality of first semiconductor layers having a stack structure. A plurality of control gate electrodes may extend across the first semiconductor layers. A first body contact layer may extend across the first semiconductor layers. A plurality of charge storage layers may be interposed between the control gate electrodes and the first semiconductor layers.

Abstract: Techniques for programming a non-volatile memory device, such as a Flash memory, include floating source lines of memory cells based on a data pattern that is being programmed to the memory device. The source lines to float are selected such that a distance between drain bit lines and source bit lines of different memory cells in a row is maximized. In this manner, leakage current between these drain bit lines and source bit lines can be decreased.