Abstract: A memory device is provided to include: a plurality of memory cells; a peripheral circuit configured to perform an operation on the plurality of memory cells; a temperature circuit configured to measure a temperature of the memory device; a monitoring component configured to generate, based on whether a measured temperature is within a reference range, monitoring information representing an operation mode that is either a normal mode in which the operation is performed or a protection mode in which the operation is suspended; and an operation controller configured to output a signal for controlling the operation according to the monitoring information. The monitoring component is further configured to store the monitoring information and output the monitoring information to the operation controller in response to receiving the measured temperature from the temperature circuit.

Abstract: A temperature control circuit for an electronic device is provided. The temperature control circuit includes a temperature detector, a status detection circuit and a control circuit. The temperature detector is configured to detect a temperature of the electronic device and generate first evaluation information. The status detection circuit is configured to detect a work status of at least one circuit module in the electronic device and generate second evaluation information. The control circuit is configured to adjust at least one electronic parameter of the electronic device according to the first evaluation parameter and the second evaluation parameter to control the temperature of the electronic device.

Abstract: A thermal sensor circuit that includes a temperature sensing circuit, an analog to digital converter, a processor, a divider circuit and a digital circuit is introduced. The temperature sensing circuit generates first and second temperature-dependent voltages. The digital to analog converter converts the first and second temperature-dependent voltages to first and second bit streams. The processor generates a third bit stream based on a thermal coefficient. The divider circuit divides one of the first and second bit streams by a denominator value to generate a fourth bit stream, wherein the denominator value is determined according to a bit value of the third bit stream. The digital circuit subtracts the other one of the first and second bit streams from the fourth bit stream to generate an output bit stream. The processor tunes the thermal coefficient until the output bit stream is equivalent to a bit stream of a reference model.

Abstract: A semiconductor memory device includes a data bus terminal group for outputting read data to an external device or inputting write data from an external device, a first terminal from or into which 1-bit data is output or input, a DBI circuit that executes a Data Bus Inversion (DBI) function, an error detection circuit that detects an internal error, and an information superimposing circuit that superimposes predetermined output information onto the 1-bit data to be output from the first terminal and the read data to be output from the data bus terminal group. The predetermined output information includes first output information indicating whether or not an output bit pattern of the data bus terminal group is inverted, and second output information indicating whether or not an internal error has been detected by the error detection circuit.

Abstract: The systems and methods disclosed herein transparently provide an improved scalable cloud-based dynamically adjustable or configurable storage volume. In one aspect, a gateway provides a dynamically or configurably adjustable storage volume, including a local cache. The storage volume may be transparently adjusted for the amount of data that needs to be stored using available local or cloud-based storage. The gateway may use caching techniques and block clustering to provide gains in access latency compared to existing gateway systems, while providing scalable off-premises storage.

Abstract: A sub-threshold MOSFET temperature sensor is provided in which a sub-threshold leakage current through a sub-threshold transistor having its source connected to its gate is mirrored through a diode-connected transistor to produce an output voltage. Feedback maintains a drain voltage for the sub-threshold transistor to equal the output voltage.

Abstract: The present disclosure includes a non-volatile memory having a boot region, a file allocation table region and a data region; a memory configured to store a program for managing a file recording; and a processor configured to execute the program. Wherein the processor allocates metadata corresponding to a file to be stored in the non-volatile memory to the FAT region as the program is executed, the processor allocates a plurality of clusters to the data region based on information upon a size of the file included in the metadata, the processor writes the file in the plurality of clusters allocated to the data region, if a size of the written file is different from a size of the plurality of allocated clusters, the processor updates the metadata based on the size of the file.

Abstract: A method and an apparatus for performing temperature compensation for a camera. The method includes: obtaining temperature information of a camera lens of the camera using a temperature sensor; obtaining a lens target movement position according to position information of a motor that controls a lens of the camera to move and the temperature information; and controlling, according to the obtained lens target movement position, a corresponding lens to move to a target movement position. According to the method and apparatus provided in this application, an imaging quality change, which is caused by a temperature change, of a camera can be compensated for using a simple and convenient method, and practicability is high.

Abstract: The invention provides a method and a device for determining the temperature of a semiconductor substrate. A resonance circuit (110) is provided on the semiconductor substrate and is formed by a junction capacitor (11) and an inductor (12). The substrate is placed on a holder and the resonance circuit (110) is irradiated with electromagnetic energy of an electromagnetic field (5) generated by a radiation device (200). A resonance frequency of the resonance circuit (110) is determined by detecting an effect of the resonance circuit (110) on the irradiated electromagnetic field (5), and a temperature of the semiconductor substrate is determined as a function of the resonance frequency. The method and device according to the invention provide for a more accurate determination of the temperature of the semiconductor substrate due to an increased sensitivity to the temperature of the junction capacitor (11).

Abstract: A thin-film semiconductor device includes a temperature sensor formed of a thin-film semiconductor and sensing a temperature as current, and a current-voltage converter formed of a thin-film semiconductor and having temperature dependence in which its current-voltage characteristic is different from that of the temperature sensor. A temperature sensed by the temperature sensor is converted to a voltage by the current-voltage converter.

Abstract: Provided are a temperature sensor for generating a sectional temperature code and sectional temperature detection method. In one embodiment, the temperature sensor includes a plurality of serially connected fixed delay cells inputting a temperature detection signal and delaying the temperature detection signal, a variable delay cell inputting the temperature detection signal and delaying the temperature detection signal; and a sectional discrimination logic unit latching outputs of the fixed delay cells in response to the variable delay cells and generating the sectional temperature code. The sectional discrimination logic unit discriminates the sectional temperatures based on temperatures where an output of the variable delay cell meets each of outputs of the fixed delay cells according to the change in the temperature, and generates temperature codes corresponding to the sectional temperatures.