Abstract: The invention relates to a method for measuring a photomask for semiconductor lithography, including the following steps: recording an aerial image of at least one region of the photomask, defining at least one region of interest, ascertaining structure edges in at least one region of interest, providing desired structures to be produced by the photomask, adapting the ascertained structure edges to the desired structures, and displacing the adapted structure edges by means of the results of a separate registration measurement.

Abstract: Apparatuses and techniques for suppressing a zeroth order portion of a configured radiation beam. In some embodiments, an extreme ultraviolet (EUV) lithographic apparatus for forming an image on a substrate by use of an EUV radiation beam that is configured by a patterning device comprising a pattern of reflective regions and partially reflective regions, wherein the partially reflective regions are configured to suppress and apply a phase shift to a portion of the EUV radiation beam, may include a projection system. The projection system may be configured to suppress a zeroth order portion of a configured EUV radiation beam, and direct an unsuppressed portion of a configured EUV radiation beam towards a substrate to form an image on the substrate.

Abstract: An object table configured to hold an object on a holding surface, the object table including: a main body; a plurality of burls extending from the main body, end surfaces of the burls defining the holding surface; an actuator assembly; and a further actuator assembly, wherein the actuator assembly is configured to deform the main body to generate a long stroke out-of-plane deformation of the holding surface based on shape information of the object that is to be held and the further actuator assembly is configured to generate a short stroke out-of-plane deformation of the holding surface.

Abstract: A Z-axis measurement fixture used for testing whether a chemical reagent test slide exhibits Z-axis variability, which may affect measurements performed by an automated chemical analyzer using such test slides, includes a planar main body that holds three stainless steel balls, each ball having a known and calibrated diameter. Portions of the stainless steel balls extend outwardly from the top wall and the bottom wall of the planar main body. A chemical reagent test slide is placed on the fixture to rest on and be supported at three points by the portions of the stainless steel balls which project outwardly from the top wall of the planar main body. The fixture is placed on the surface of a gauge block of an optical measurement system such that the lower portions of the three stainless steel balls will rest on the gauge block of the optical measurement system.

Abstract: An optical wavelength dispersion device and manufacturing method therefor are disclosed, wherein the optical wavelength dispersion device includes a waveguide unit and a reflector, wherein the waveguide unit has a first substrate, an input unit, a grating and a second substrate. The input unit is formed on the first substrate and having a slit for receiving an optical signal, a grating is formed on the first substrate for producing an output beam once the optical signal is dispersed, the second substrate is located on the input unit and the grating, and forms a waveguide space with the first substrate, the reflector is located outside of the waveguide unit, and is used for change emitting angle of the output beam.

Abstract: The present invention provides a reflective condensing interferometer for focusing on a preset focus. The reflective condensing interferometer includes a concave mirror set, a convex mirror, a light splitting element, and a reflecting element. The concave mirror set has first and second concave surface portions which are oppositely located on two sides of a central axis passing through the preset focus and are concave on a surface facing the central axis and the preset focus. Light is preset to be incident in parallel to the central axis in use. The convex mirror is disposed between the concave mirror set and the preset focus on the central axis, and is convex away from the preset focus. The light splitting element vertically intersects with the central axis between the convex mirror and the preset focus. The reflecting element is disposed between the light splitting element and the convex mirror.

Abstract: An extreme ultraviolet light generation apparatus that generates plasma by irradiating a target substance with a pulse laser beam and generates extreme ultraviolet light from the plasma includes: a chamber housing a collector mirror configured to condense the extreme ultraviolet light; a gas introduction pipe through which gas is introduced into the chamber; a mass flow controller configured to change the flow rate of the gas; a discharge pump configured to discharge the gas from the chamber; a pressure sensor configured to monitor the pressure in the chamber; and a control unit configured to control the mass flow controller based on the pressure measured by using the pressure sensor. The control unit controls the mass flow controller to increase an increase ratio of the flow rate of the gas entering the chamber as the pressure acquired by the pressure sensor increases.

Abstract: Embodiments of the present disclosure disclose a combined scanning X-ray generator, a composite inspection apparatus and an inspection method. The combined scanning X-ray generator includes: a housing; an anode arranged in the housing, the anode including a first end of the anode and a second end of the anode opposite the first end of the anode; a pencil beam radiation source arranged at the first end of the anode and configured to emit a pencil X-ray beam; and a fan beam radiation source arranged at the second end of the anode and configured to emit a fan X-ray beam; wherein the pencil beam radiation source and the fan beam radiation source are operated independently.

Abstract: There is provided a mask inspection system and a method of mask inspection. The method comprises: during a runtime scan of a mask of a semiconductor specimen, processing a plurality of aerial images of the mask acquired by the mask inspection system to calculate a statistic-based Edge Positioning Displacement (EPD) of a potential defect, wherein the statistic-based EPD is calculated using a Print Threshold (PT) characterizing the mask and is applied to each of the one or more acquired aerial images to calculate respective EPD of the potential defect therein; and filtering the potential defect as a “runtime true” defect when the calculated statistic-based EPD exceeds a predefined EPD threshold, and filtering out the potential defect as a “false” defect when the calculated statistic-based EPD is lower than the predefined EPD threshold. The method can further comprise after-runtime EPD-based filtering of the plurality of “runtime true” defects.

Abstract: The present application provides a method, an apparatus, and a system for forming code. The method includes while a substrate is transferred to an exposure machine, adjusting the substrate to align with an exposure alignment mark on the substrate with the exposure machine; forming a code formation area on the adjusted substrate by controlling the exposure machine; while the substrate formed with the code formation area is transferred to a code formation machine, adjusting the substrate to align the exposure alignment mark on the substrate with the code formation machine; and forming an identification code in the code formation area on the adjusted substrate by controlling the code formation machine.

Abstract: An x-ray anode for an x-ray emitter has a structured surface provided for impingement with electrons. According to an embodiment of the invention, the structured surface has a surface structure which alternates periodically at least in sections and which varies in the micrometer range with respect to its depth extension and periodicity.

Abstract: Techniques for fabricating a slanted structure are disclosed. In one embodiment, a method of fabricating a slanted surface-relief structure in a material layer includes forming a thin hard mask on top of an intermediate mask layer, etching the intermediate mask layer at a slant angle using the thin hard mask to form a slanted intermediate mask, and etching the material layer at the slant angle using the slanted intermediate mask to form the slanted surface-relief structure in the material layer. The intermediate mask layer is characterized by an etch rate greater than an etch rate of the material layer.

Abstract: Extreme ultra-violet (EUV) lithography ruling engine specifically configured to print one-dimensional lines on a target workpiece includes source of EUV radiation; a pattern-source defining 1D pattern; an illumination unit (IU) configured to irradiate the pattern-source; and projection optics (PO) configured to optically image, with a reduction factor N>1, the 1D pattern on image surface that is optically-conjugate to the 1D pattern. Irradiation of the pattern-source can be on-axis or off-axis. While 1D pattern has first spatial frequency, its optical image has second spatial frequency that is at least twice the first spatial frequency. The pattern-source can be flat or curved. The IU may include a relay reflector. A PO's reflector may include multiple spatially-distinct reflecting elements aggregately forming such reflector. The engine is configured to not allow formation of optical image of any 2D pattern that has spatial resolution substantially equal to a pitch of the 1D pattern of the pattern-source.

Abstract: The present disclosure relates to a system for forming a three dimensional (3D) part. The system may incorporate a beam delivery subsystem for generating optical signals, and a mask subsystem that receives the optical signals and generates optical images therefrom. A first one of the optical images activates a polymerization species of a photo-sensitive resin in accordance with illuminated areas thereof, to thus cause polymerization of select portions of the photo-sensitive resin to help form a layer of the 3D part. A second one of the optical images causes stimulated emission depletion of subportions of the polymerization species, simultaneously, over various areas of the layer, to enhance resolution of at least one subportion of the select portions of the photo-sensitive resin.

Abstract: In equipment that supplies a processing liquid on a top surface of a substrate while holding the substrate horizontally in a chamber a generation status of fumes is determined. Specifically, an image of a predetermined imaging area in the chamber is captured. Then, the generation status of fumes in the chamber is determined based on luminance values of the captured image acquired by the capturing of an image. Accordingly, it is possible to quantitatively determine whether a generation status of fumes in a chamber is normal.

Abstract: Extreme ultra-violet (EUV) lithography ruling engine specifically configured to print one-dimensional lines on a target workpiece includes source of EUV radiation; a pattern-source defining 1D pattern; an illumination unit (IU) configured to irradiate the pattern-source; and projection optics (PO) configured to optically image, with a reduction factor N>1, the 1D pattern on image surface that is optically-conjugate to the 1D pattern. Irradiation of the pattern-source can be on-axis or off-axis. While 1D pattern has first spatial frequency, its optical image has second spatial frequency that is at least twice the first spatial frequency. The pattern-source can be flat or curved. The IU may include a relay reflector. A PO's reflector may include multiple spatially-distinct reflecting elements aggregately forming such reflector. The engine is configured to not allow formation of optical image of any 2D pattern that has spatial resolution substantially equal to a pitch of the 1D pattern of the pattern-source.

Abstract: A device for atomic layer deposition includes: a film deposition chamber; a stage installed inside the film deposition chamber; a susceptor that holds, on the stage, a substrate; a mask disposed on the substrate, the mask being sized to encompass the substrate; a mask pin that supports the mask; and a mask pin hole bored through the stage and the susceptor vertically, and allows the mask pin to be inserted in a vertically movable manner, wherein the susceptor has a susceptor body having a holding surface of the substrate, and a susceptor peripheral edge located around the susceptor body and having a height lower than the holding surface, the mask pin hole is opened in the susceptor peripheral edge, and in the susceptor peripheral edge, an inert gas supply port that releases gas upward is provided around the holding surface in a surrounding area of the mask.

Abstract: We disclose herewith a heterostructure-based infra-red (IR) device comprising a substrate comprising an etched portion and a substrate portion; a device region on the etched portion and the substrate portion, the device region comprising a membrane region which is an area over the etched portion of the substrate. At least one heterostructure-based element is formed at least partially within or on the membrane region and the heterostructure-based element comprises at least one two dimensional carrier gas.

Abstract: An optical system, in particular for a microlithographic projection exposure apparatus, with at least one mirror (200) which has an optically effective surface and, for electromagnetic radiation of a predefined operating wavelength impinging on the optically effective surface at an angle of incidence of at least 65° relative to the respective surface normal, has a reflectivity of at least 0.5. The mirror has a reflection layer (210) and a compensation layer (220) which is arranged above this reflection layer (210) in the direction of the optically effective surface. The compensation layer (220), for an intensity distribution generated in a pupil plane or a field plane of the optical system during operation thereof, reduces the difference between the maximum and the minimum intensity value by at least 20% compared to an analogous structure without the compensation layer.

Abstract: The disclosure relates to a method for producing an illumination system for an EUV apparatus in and to an illumination system for an EUV apparatus.

Abstract: A concave portion provided in at least one of the first assembled surface, and other assembled surfaces for fastening the driving force source, in the region corresponding to the outer race of the tapered roller bearing, the other assembled surfaces provided to one of the fixed component and the driving force source.

Abstract: A patterning device comprising a reflective marker, wherein the marker comprises: a plurality of reflective regions configured to preferentially reflect radiation having a given wavelength; and a plurality of absorbing regions configured to preferentially absorb radiation having the given wavelength; wherein the absorbing and reflective regions are arranged to form a patterned radiation beam reflected from the marker when illuminated with radiation, and wherein the reflective regions comprise a roughened reflective surface, the roughened reflective surface being configured to diffuse radiation reflected from the reflective regions, and wherein the roughened reflective surface has a root mean squared roughness of about an eighth of the given wavelength or more.

Abstract: The present disclosure provides a lithographic reticle system comprising a reticle, a first pellicle membrane mounted in front of the reticle, and a second pellicle membrane mounted in front of the first pellicle membrane, wherein the first pellicle membrane is arranged between the reticle and the second pellicle membrane, and wherein the second pellicle membrane is releasably mounted in relation to the first pellicle membrane and the reticle.

Abstract: A receiving means for receiving and mounting of wafers, comprised of a mounting surface, mounting means for mounting a wafer onto the mounting surface and compensation means for active, locally controllable, compensation of local and/or global distortions of the wafer.

Abstract: A mask manufacturing apparatus, a method of manufacturing the mask, and a mask for lithography, capable of providing a pattern having a size in nanometer unit using the photo-lithography process are provided. A mask manufacturing apparatus, a method of manufacturing the mask, and an elastic film for a photo-mask lower a critical dimension of the pattern(s) without increasing a manufacturing cost. The mask manufacturing apparatus and the method of manufacturing the mask, and the mask for lithography provide a pattern having a size in nanometer unit using the photo-lithography process.

Abstract: A method of aligning a template and a substrate for imprint lithography involves using a mask pattern of the template and a luminescent marker pattern of the substrate, the method including aligning the template mask pattern and the substrate marker pattern using a radiation intensity measurement of radiation emitted by the luminescent marker pattern and having passed the template mask pattern. The mask pattern and the luminescent marker pattern may each be shaped to provide a turning point in the intensity of detected radiation emitted from the marker pattern, and passing through the mask pattern to a detector, as a function of relative displacement at the aligned position. The displacement of the template and substrate may be aligned by identifying the turning point in radiation intensity. The marker pattern may be fluorescent with the emitted radiation excited by a radiation source.

Abstract: The present invention is concerned with an apparatus for shielding a reticle for EUV lithography. The apparatus comprises a pellicle, and at least one actuator in communication with the pellicle, the actuator being configured to induce, in use, movement of the pellicle with respect to a reticle.

Abstract: Provided is a reflective photomask including a substrate, and a reflective layer formed on the substrate. The reflective layer includes at least one recessed portion. An absorbing layer is formed in the recessed portion. The absorbing layer includes at least one absorbent and at least one polymer.

Abstract: A method and a microscope for determining a position of a structure element on a mask are provide. The method comprises predefining a region on the mask which comprises at least the structure element; determining a phase image of the region, wherein the phase image comprises in a spatially resolved manner the phase of the imaging of the mask by the illumination radiation; and determining the position of the structure element within the phase image.

Abstract: Provided are an apparatus and method of sensing liquid leakage for a lithography apparatus, which can prevent a collector mirror from being contaminated by sensing leakage of cooling water supplied to the collector mirror of an extreme ultraviolet (EUV) light generating apparatus. The liquid leakage sensing apparatus includes a collector mirror module, a cooling unit configured to supply a cooling water to one surface of the collector mirror module, a gas supply unit configured to supply a water soluble gas to the cooling unit, and a sensing unit configured to sense the water soluble gas having leaked to the outside of the cooling unit.

Abstract: Nitrogen-doped tungsten films characterized by low stress (e.g. less than 250 MPa) and excellent adhesion to an underlying dielectric layer are deposited by physical vapor deposition (PVD). The films can be used as hardmask layers in fabrication of 3D memory stacks and can be deposited directly onto a top dielectric layer in a stack of layers. The low stress films are characterized by higher concentration of nitrogen at the interface with the dielectric layer than in the bulk of the film, and have a nitrogen content of between about 5-20% atomic. The films having a thickness of between about 300-900 nm can be deposited in a PVD process chamber by forming a plasma in a process gas comprising a noble gas and nitrogen, where the flow rate of nitrogen is between about 10-17% of the total flow rate of the process gas.

Abstract: An illumination optical unit comprises a first faceted element and a second faceted element having a multiplicity of displaceable micromirrors which can be grouped flexibly to form facets.

Abstract: An exposure apparatus exposes a substrate by projecting a pattern image onto the substrate through a liquid. The exposure apparatus includes a projection optical system by which the pattern image is projected onto the substrate, and a movable member which is movable relative to the projection optical system. A liquid-repellent member, at least a part of a surface of which is liquid-repellent, is provided detachably on the movable member, the liquid-repellent member being different from the substrate.

Abstract: An illumination system has illumination optics which guide EUV illumination light collected by a collector to an object field. The illumination optics have a field facet mirror and a pupil facet mirror. Pupil facets are part of transfer optics which image the field facets in a manner superposed on one another into the object field. The collector images a radiation source region into an intermediate focal region disposed downstream thereof. The latter constitutes the first image of the radiation source region in the beam path disposed downstream thereof. A constriction region not coinciding with the downstream focal region is situated between the collector and a first component of the illumination optics.

Abstract: A system to configure a conductive pathway and a method of forming a system of configurable conductivity pathways are described. The system includes a photosensitive layer that becomes conductive based on photoexcitation, and a light source layer deposited over the photosensitive layer, the light source layer selectively providing the photoexcitation to the photosensitive layer. The system further includes a controller to control the light source layer, the controller illuminating a portion of the light source layer corresponding with a user input image to photoexcite the photosentive layer and configure the conductive pathway in the photosensitive layer according to the image.

Abstract: A method for aligning a ferrule-mounted optical fiber with the optical axis of an electro-optical device, including the following steps: providing an alignment marking with respect to the device in relation to the optical axis; providing an annular receptacle and a tubular alignment pin with a central passageway, having its proximal end slidably fitted in the annulus of the receptacle; aligning the proximal end of the alignment pin with the alignment marking; securing the device to the receptacle; removing the alignment pin from the receptacle; and inserting the ferrule-mounted optical fiber into the receptacle.

Abstract: An EUV light source includes a rotatable, cylindrically-symmetric element having a surface coated with a plasma-forming target material, a drive laser source configured to generate one or more laser pulses sufficient to generate EUV light via formation of a plasma by excitation of the plasma-forming target material, a set of focusing optics configured to focus the one or more laser pulses onto the surface of the rotatable, cylindrically-symmetric element, a set of collection optics configured to receive EUV light emanated from the generated plasma and further configured to direct the illumination to an intermediate focal point, and a gas management system including a gas supply subsystem configured to supply plasma-forming target material to the surface of the rotatable, cylindrically-symmetric element.

Abstract: An apparatus and method for capturing a color image and a depth image are utilized as a source of obtaining a three-dimensional (3D) image. The apparatus for capturing the color image and the depth image may include a filtering unit to employ a frame having a polarity which includes an external frame to support a plurality of filters which filter at least one of a visible ray and an infrared (IR) ray from a ray input via a lens, a driving unit to move the filtering unit by pushing or pulling the external frame based on a polarity of an applied signal, and a control unit to control a voltage to be applied to the driving unit based on a distance between the filtering unit and the driving unit.

Abstract: An exposure apparatus and method exposes a substrate by projecting an image of a pattern onto the substrate through a liquid. A projection optical system projects the image of the pattern onto the substrate. A recovery port recovers the liquid supplied onto the substrate. A temperature sensor measures a temperature of the liquid recovered via the recovery port.

Abstract: An exposure apparatus and method exposes a substrate by projecting an image of a pattern onto the substrate through a liquid. A projection optical system projects the image of the pattern onto the substrate. A recovery port recovers the liquid supplied onto the substrate. A temperature sensor measures a temperature of the liquid recovered via the recovery port.

Abstract: A lithography process in a lithography system includes loading a mask that includes two mask states defining an integrated circuit (IC) pattern. The IC pattern includes a plurality of main polygons, wherein adjacent main polygons are assigned to different mask states; and a background includes a field in one of the mask states and a plurality of sub-resolution polygons in another of the two mask states. The lithography process further includes configuring an illuminator to generate an illuminating pattern on an illumination pupil plane of the lithography system; configuring a pupil filter on a projection pupil plane of the lithography system with a filtering pattern determined according to the illumination pattern; and performing an exposure process to a target with the illuminator, the mask, and the pupil filter. The exposure process produces diffracted light and non-diffracted light behind the mask and the pupil filter removes most of the non-diffracted light.

Abstract: A method for inspection includes irradiating, with a focused beam, a feature formed on a semiconductor wafer, the feature including a volume containing a first material and a cap made of a second material, different from the first material, that is formed over the volume. One or more detectors positioned at different angles relative to the feature are used to detect X-ray fluorescent photons that are emitted by the first material in response to the irradiating beam and pass through the cap before striking the detectors. Signals output by the one or more detectors at the different angles in response to the detected photons are processed in order to assess a quality of the cap.

Abstract: The present invention refers to a method for coating a substrate, a coating apparatus for carrying out the method and a handling module for coating apparatuses. The handling module comprises a moveable support for a substrate to be coated the support being movable between at least two positions. Further, a mask arranging device for at least one of attaching and detaching a mask to the substrate, and a mask alignment device for aligning the mask with respect to the substrate are provided for, wherein the mask alignment device is attached to the movable support so as to be movable together with the support. Alternatively, the handling module comprises a vacuum chamber, a moveable support for a substrate to be coated, the support being arranged in the vacuum chamber and being rotatable between at least two positions, wherein a mask arranging device for at least one of attaching and detaching a mask to the substrate is arranged within the vacuum chamber of the handling module.

Abstract: A chamber assembly (26) for providing a sealed chamber (40) adjacent to a workpiece (28) to counteract the influence of gravity on the workpiece (28) includes a chamber housing (244), and a seal assembly (33) that expands and/or contracts to better seal against the workpiece (28). Further, the chamber assembly (26) can include one or more transducer assemblies (34) that expand or contract to quickly respond to leaks or injections of fluid in chamber assembly (26) to maintain a constant and stable chamber pressure in the chamber assembly (26). Moreover, the chamber assembly (26) can utilize a pressure source (35) that directs a lager amount of fluid (374) through a fluid passageway (368) to accurately maintain the pressure within the chamber assembly (26).

Abstract: A lithographic apparatus includes a projection system, a substrate table, a plurality of sensors, an actuator and a controller. The projection system is configured to project a patterned beam of radiation onto a substrate. The substrate table is configured to support the substrate and to move relative to the projection system. The plurality of sensors is configured to measure a deformation of the substrate table. The actuator is configured to deform the substrate table. The controller is configured to control the actuator to deform the substrate table based on measurements made by the sensors. The plurality of sensors is located on a first side of the substrate table opposite to a second side of the substrate table facing the projection system. The plurality of sensors is substantially stationary relative to the projection system.

Abstract: A receiving means for receiving and mounting of wafers. The receiving means includes a mounting surface. A mounting means is provided for mounting a wafer on the mounting surface. A compensation means is provided for active, especially locally controllable, at least partial compensation of local and/or global distortions of the wafer.

Abstract: In general, in one aspect, the invention features an objective arranged to image radiation from an object plane to an image plane, including a plurality of elements arranged to direct the radiation from the object plane to the image plane, wherein the objective has an image side numerical aperture of more than 0.55 and a maximum image side field dimension of more than 1 mm, and the objective is a catoptric objective.

Abstract: There is provided an EUV exposure apparatus which restrains its optical systems or a mask used therein from being polluted by contaminations generated in its chamber. An energy beam generating source is arranged near a wafer stage set in the chamber of the EUV exposure apparatus to decompose an emission gas generated from a resist painted on the front surface of a wafer by an energy beam. In this manner, lightening mirrors configuring a lightening optical system as one of the optical systems, projection mirrors configuring a projection optical system as another of the optical systems, the mask, and others are protected from being polluted by contaminations.

Abstract: A lithographic apparatus includes an illumination system to provide a beam of radiation, a support to support a patterning devices, the patterning devices configured to impart the beam with a pattern in its cross-section, a substrate table to hold a substrate, a projection system to project the patterned beam onto a target portion of the substrate, and a conditioning system to condition the substrate. The conditioning system conditions a non-target portion of the substrate with a conditioning fluid. A method of manufacturing a device includes conditioning a non-target portion of a substrate.

Abstract: An exposure apparatus for exposing a pattern formed on a mask (M) onto a photosensitive substrate (P) through a projection optical system (PL), comprising an upper pedestal (26) on which at least one of the projection optical system (PL) and a mask stage (MST) which is to hold the mask (M) is mounted, and a plurality of lower pedestals (6a) which supports the upper pedestal (26) and which has a longitudinal direction in a predetermined direction.