Abstract: A contact layer for an electrical contact is disclosed having bismuth and being tin-free.

Abstract: Identifying a stable phase of a binary alloy comprising a solute element and a solvent element. In one example, at least two thermodynamic parameters associated with grain growth and phase separation of the binary alloy are determined, and the stable phase of the binary alloy is identified based on the first thermodynamic parameter and the second thermodynamic parameter, wherein the stable phase is one of a stable nanocrystalline phase, a metastable nanocrystalline phase, and a non-nanocrystalline phase.

Abstract: A method of depositing a film of a metal having a volatilization temperature higher than 350° C., as well as, a composite material including the same are disclosed. The method can include providing the source material in a vacuum deposition processing chamber, and providing a substrate in the vacuum deposition processing chamber. The substrate can be spaced apart from, but in fluid communication with, the source material, and also maintained at a substrate temperature that is lower than the volatilization temperature. The method can also include reducing an internal pressure of the vacuum deposition processing chamber to a pressure between 0.1 and 14,000 pascals; volatilizing the source material into a volatilized metal by heating the source material to a first temperature that is higher than the volatilization temperature; and transporting the volatilized metal to the substrate using a heated carrier gas, whereby the volatilized metal deposits on the substrate and forms the metal film.

Abstract: A lead-free solder alloy consisting essentially of, in mass percent, Bi: 31-59%, Sb: 0.15-0.75%, at least one element selected from Cu: 0.3-1.0% and P: 0.002-0.055%, and a balance of Sn has a low melting point for suppressing warping of a thin substrate during soldering. It can form solder joints with high reliability even when used for soldering to electrodes having a Ni coating which contains P, since the growth of a P-rich layer is suppressed so that the shear strength of the joints is improved and the alloy has a high ductility and a high tensile strength.

Abstract: A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.

Abstract: A solder comprising a bismuth matrix, between about 5-24% copper; and about 0.5-36% tin or antimony or zinc; having a solidus temperature of ?271° C., a reflow temperature of ?375° C., and at least one intermetallic composition precipitate comprising copper and at least one of tin, antimony and zinc substantially excluding bismuth formed within the solidus phase.

Abstract: Provided in one embodiment is a method of identifying a stable phase of an ordering binary alloy system comprising a solute element and a solvent element, the method comprising: determining at least three thermodynamic parameters associated with grain boundary segregation, phase separation, and intermetallic compound formation of the ordering binary alloy system; and identifying the stable phase of the ordering binary alloy system based on the first thermodynamic parameter, the second thermodynamic parameter and the third thermodynamic parameter by comparing the first thermodynamic parameter, the second thermodynamic parameter and the third thermodynamic parameter with a predetermined set of respective thermodynamic parameters to identify the stable phase; wherein the stable phase is one of a stable nanocrystalline phase, a metastable nanocrystalline phase, and a non-nanocrystalline phase.

Abstract: High Impact Toughness Alloy The invention provides an alloy, preferably a lead-free solder alloy, comprising: from 35 to 59% wt Bi; from 0 to 0.0 wt % Ag; from 0 to 1.0% wt Au; from 0 to 1.0% wt Cr; from 0 to 2.0% wt In; from 0 to 1.0% wt P; from 0 to 1.0% wt Sb; from 0 to 1.0% wt Sc; from 0 to 1.0% wt Y; from 0 to 1.0% wt Zn; from 0 to 1.0% wt rare earth elements; one or more of: 10 from greater than 0 to 1.0% wt Al; from 0.01 to 1.0% wt Ce; from greater than 0 to 1.0% wt Co; from greater than 0 to 0.0% wt Cu; from 0.001 to 1.0% wt Ge; from greater than 0 to 0.0% wt Mg; from greater than 0 to 1.0% wt Mn; from 0.01 to 1.0% wt Ni; and from greater than 0 to 1.0% wt Ti, and the 1 balance Sn, together with any unavoidable impurities.

Abstract: A Bi1-xSbx thin film is provided that includes a Dirac-cone with different degrees of anisotropy in their electronic band structure by controlling the stoichiometry, film thickness, and growth orientation of the thin film, so as to result in a consistent inverse-effective mass tensor including non-parabolic or linear dispersion relations.

Abstract: Disclosed is a solder material which enables to realize a lower mounting temperature when an electronic component is mounted. Also disclosed are a solder paste and a conductive adhesive. Specifically disclosed is a solder material having a basic composition composed of Sn, Bi and In. This solder material may further contain at least one metal selected from the group consisting of Cu, Ge and Ni. A solder paste which enables to realize a low-temperature mounting can be obtained by blending a flux component into the solder material. A conductive adhesive which enables to realize a low-temperature mounting can be obtained by blending a resin component into the solder material.

Abstract: A pellet having a microstructure including a bismuth phase, a zinc solid solution phase, and a Zn3Hg phase is disclosed. A method of making a pellet including bismuth, zinc, and mercury is also disclosed. Moreover, a fluorescent lamp with a fill material including bismuth, zinc, and mercury is disclosed. Further, a method of dosing a fluorescent lamp with mercury is disclosed.

Abstract: A railgun which has a conductive lubricant and system of delivery reduces the electrical resistance and friction of the armature-rail sliding contact, thereby decreasing the amount of heat generated at the electrical contact. The conductive lubricant may be a ternary alloy of bismuth, indium and tin. The system of delivery for the conductive lubricant may include a plurality of surface reservoirs formed in either the rail surface, the armature face, or both.

Abstract: A method of preparing thermoelectric material particles, the method comprising: disposing a first electrode and a second electrode in a dielectric liquid medium, wherein the first and second electrodes each comprise a thermoelectric material; applying an electrical potential between the first and second electrodes to cause a spark between the first and second electrodes to provide a vaporized thermoelectric material at a sparking point of at least one of the first and second electrodes; and cooling the vaporized thermoelectric material with the dielectric liquid medium to prepare the thermoelectric material particles.

Abstract: A liquid metal ion source for use in an ion mass spectrometric analysis method contains, on the one hand, a first metal with an atomic weight ?190 U and, on the other hand, another metal with an atomic weight ?90 U. One of the two types of ions are filtered out alternately from the primary ion beam and directed onto the target as a mass-pure primary ion beam.

Abstract: A high-temperature solder alloy is a Bi—Sn based solder alloy containing at least 90 mass % of Bi, further containing 1-5 mass % of Sn, at least one element selected from Sb and/or Ag each in an amount of 0.5-5 mass %, and preferably further containing 0.0004-0.01 mass % of P.

Abstract: Disclosed herein is a high-temperature Pb-free solder alloy having the strength required to join electronic parts to a substrate and having excellence in wettability and workability. The high-temperature Pb-free solder alloy contains 0.4% by mass or more but 13.5% by mass or less of Zn, 0.05% by mass or more but 2.0% by mass or less of Cu, 0.500% by mass or less of P, and a balance being Bi except for inevitable impurities. The Pb-free solder alloy may further contain 0.03% by mass or more but 0.7% by mass or less of Al.

Abstract: There is provided a Pb-free solder alloy whose residual stress during solidification is small and which achieves high joint strength and high reliability, can suppress a reaction between Ni and Bi or diffusion of Ni when used to join Ni-containing electronic parts or substrates, and can withstand a high reflow temperature. A first aspect of a Pb-free solder alloy consists of 0.03% by mass or more but 0.70% by mass or less of Al, 0.2% by mass or more but 14.0% by mass or less of Zn, and the balance being Bi except for inevitable impurities. A second aspect of a Pb-free solder alloy consists of 0.03% by mass or more but 0.70% by mass or less of Al, 0.2% by mass or more but 14.0% by mass or less of Zn, not more than 0.500% by mass of P, and the balance being Bi except for inevitable impurities.

Abstract: Disclosed is a solder material which enables to realize a lower mounting temperature when an electronic component is mounted. Also disclosed are a solder paste and a conductive adhesive. Specifically disclosed is a solder material having a basic composition composed of Sn, Bi and In. This solder material may further contain at least one metal selected from the group consisting of Cu, Ge and Ni. A solder paste which enables to realize a low-temperature mounting can be obtained by blending a flux component into the solder material. A conductive adhesive which enables to realize a low-temperature mounting can be obtained by blending a resin component into the solder material.

Abstract: A conventional low-temperature solder containing Pb or Cd had problems with respect to environmental pollution. A conventional low-temperature lead-free solder had a liquidus temperature which was too high for low heat resistance parts having a heat resistance temperature of 130° C., or it was brittle or had low mechanical strength. A lead-free low-temperature solder according to the present invention comprises 48-52.5 mass % of In and a balance of Bi, and most of the structure is constituted by a BiIn2 intermetallic compound which is not brittle. Zn or La can be added in order to further improve solderability, and a small amount of P can be added to prevent corrosion at high temperatures and high humidities.

Abstract: Disclosed is a solder material which enables to realize a lower mounting temperature when an electronic component is mounted. Also disclosed are a solder paste and a conductive adhesive. Specifically disclosed is a solder material having a basic composition composed of Sn, Bi and In. This solder material may further contain at least one metal selected from the group consisting of Cu, Ge and Ni. A solder paste which enables to realize a low-temperature mounting can be obtained by blending a flux component into the solder material. A conductive adhesive which enables to realize a low-temperature mounting can be obtained by blending a resin component into the solder material.

Abstract: A solder includes Sn (tin), Bi (bismuth) and Zn (zinc), wherein the solder has a Zn content of 0.01% by weight to 0.1% by weight.

Abstract: There is provided a hydrogen gas generating member which safely facilitates the hydrogen gas generation reaction by bringing an Al alloy which is subjected to rolling treatment or powdering treatment into contact with water. A hydrogen gas generating member 20 includes a texture in which Al is finely dispersed in a metal matrix, where hydrogen gas is generated by bringing the hydrogen gas generating member into contact with water. A fixing member 14 for mounting the hydrogen gas generating member 20 is provided in a hydrogen generating apparatus 10 and is brought into contact with a water 15 that is stored inside. The hydrogen gas generated from the surface is supplied outside through a hydrogen gas collecting, pipe 12 and stored in a storage tank (not shown).

Abstract: The inventors demonstrate herein that various Zintl compounds can be useful as thermoelectric materials for a variety of applications. Specifically, the utility of Ca3AlSb3, Ca5Al2Sb6, Ca5In2Sb6, Ca5Ga2Sb6, is described herein. Carrier concentration control via doping has also been demonstrated, resulting in considerably improved thermoelectric performance in the various systems described herein.

Abstract: The disclosure relates to fluorescent lamps and methods of manufacture wherein the mercury is dosed into the lamp in a solid material containing mercury, bismuth, indium and another metal. In one embodiment, the metal is selected from the group consisting of zinc, tin, lead, silver, gold, copper, gallium, titanium, nickel, and manganese. Preferably, the atomic ratio of the indium to the bismuth is in the range of about 0.4:0.6 to 0.7:0.3. The atomic ratio of zinc to the combination indium and bismuth may preferably be in the range of about 0.01:0.99 to 0.20:0.80, and the atomic ratio of mercury to the combination of the indium, bismuth and zinc is preferably in the range of about 0.01:0.99 and 0.15:0.85.

Abstract: In a semiconductor device bonded to a motherboard with a bonding material having a melting point of 200° C. to 230° C., a bonding material 15 which is a die bonding material for bonding a semiconductor element 13 to a semiconductor substrate 11 is a Bi alloy containing 0.8 wt % to 10 wt % of Cu and 0.02 wt % to 0.2 wt % of Ge, so that the bonding material 15 for bonding the semiconductor element 13 to the semiconductor substrate 11 is not melted when the semiconductor device is bonded to the motherboard by reflowing. It is therefore possible to suppress poor connection on the semiconductor element 13, thereby securing the mountability and electrical reliability of the semiconductor device.

Abstract: The present invention provides a semiconductor component having a joint structure including a semiconductor device, an electrode disposed opposite the semiconductor device, and a joining material which contains Bi as main component and connects the semiconductor device to the electrode. Since the joining material contains a carbon compound, joint failure due to the difference in linear expansion coefficient between the semiconductor device and the electrode can be reduced compared with conventional materials. The joining material which contains Bi as main component enables provision of a joint structure in which a semiconductor device and an electrode are joined by a joint more reliable than a conventional joint.

Abstract: A method for synthesis of high quality colloidal nanoparticles using comprises a high heating rate process. Irradiation of single mode, high power, microwave is a particularly well suited technique to realize high quality semiconductor nanoparticles. The use of microwave radiation effectively automates the synthesis, and more importantly, permits the use of a continuous flow microwave reactor for commercial preparation of the high quality colloidal nanoparticles.

Abstract: A bonding material containing 2 to 10.5% by weight of Cu, 0.02 to 0.2% by weight of Ge and 89.3 to 97.98% by weight of Bi has heat resistance of up to 275° C. and superior wettability, and a bonding material containing 2 to 10.5% by weight of Cu, 0.02 to 0.2% by weight of Ge, 0.02 to 0.11% by weight of Ni and 89.19 to 97.96% by weight of Bi has more superior heat resistance.

Abstract: The invention provides a solder alloy for bonding an oxide material, including more than 0% but not more than 1.0% of Mg and the balance being substantially Bi and Sn. Preferably, the alloy includes 0.01 to 0.6% of Mg, 35 to 86% of Bi, and the balance being substantially Sn. The invention can be used for bonding an oxide material, such as bonding glasses to each other. According to the invention, a low-cost solder joint of an oxide material is also provided.

Abstract: Disclosed is a solder material which enables to realize a lower mounting temperature when an electronic component is mounted. Also disclosed are a solder paste and a conductive adhesive. Specifically disclosed is a solder material having a basic composition composed of Sn, Bi and In. This solder material may further contain at least one metal selected from the group consisting of Cu, Ge and Ni. A solder paste which enables to realize a low-temperature mounting can be obtained by blending a flux component into the solder material. A conductive adhesive which enables to realize a low-temperature mounting can be obtained by blending a resin component into the solder material.

Abstract: The invention relates to the use of a thermoelectric material for thermoelectric purposes at a temperature of 150 K or less, said thermoelectric material is a material corresponding to the stoichiometric formula FeSb2, wherein all or part of the Fe atoms optionally being substituted by one or more elements selected from the group comprising: Sc, Ti, V, Cr, Mn, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, La, Hf, Ta, W, Re, Os, Tr, Pt, Au, Hg, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and a vacancy; and wherein all or part of the Sb atoms optionally being substituted by one or more elements selected from the group comprising: P, As, Bi, S, Se, Te, B, Al, Ga, In, Tl, C, Si, Ge, Sn, Pb and a vacancy; with the proviso that neither one of the elements Fe and Sb in the formula FeSb2 is fully substituted with a vacancy, characterised in that said thermoelectric material exhibits a power factor (S2?) of 25 ?W/cmK2 or more at a temperature of 150 K or less.

Abstract: A conventional low-temperature solder containing Pb or Cd had problems with respect to environmental pollution. A conventional low-temperature lead-free solder had a liquidus temperature which was too high for low heat resistance parts having a heat resistance temperature of 130° C., or it was brittle or had low mechanical strength. A lead-free low-temperature solder according to the present invention comprises 48-52.5 mass % of In and a balance of Bi, and most of the structure is constituted by a BiIn2 intermetallic compound which is not brittle. Zn or La can be added in order to further improve solderability, and a small amount of P can be added to prevent corrosion at high temperatures and high humidities.

Abstract: A bonding material that has a melting temperature of 270° C. or higher and that does not contain lead is inexpensively provided. An electronic element and an electrode of an electronic component are bonded using a bonding material containing an alloy that contains Bi as the main component and that contains 0.2 to 0.8 wt % Cu and to 0.2 wt % Ge.

Abstract: To provide a solder alloy, a solder ball and an electronic member having a solder bump, used for connection with a mother board or the like, having a melting temperature of less than 250° C. for the solder alloy, achieving high drop impact resistance required in mobile devices or the like. A solder alloy is used which consists of not less than 0.1 mass ppm of boron and not greater than 200 mass ppm of boron and a remainder comprising substantially not less than 40% by mass of Sn, in which its melting temperature is less than 250° C.

Abstract: In a semiconductor device bonded to a motherboard with a bonding material having a melting point of 200° C. to 230° C., a bonding material 15 which is a die bonding material for bonding a semiconductor element 13 to a semiconductor substrate 11 is a Bi alloy containing 0.8 wt % to 10 wt % of Cu and 0.02 wt % to 0.2 wt % of Ge, so that the bonding material 15 for bonding the semiconductor element 13 to the semiconductor substrate 11 is not melted when the semiconductor device is bonded to the motherboard by reflowing. It is therefore possible to suppress poor connection on the semiconductor element 13, thereby securing the mountability and electrical reliability of the semiconductor device.

Abstract: The invention relates to a soft solder which includes the alloying constituents bismuth and two of the three metals silver, copper and nickel, wherein bismuth forms between 20% by weight and 99.8% by weight of the alloy, silver forms between 0.1% by weight and 50% by weight of the alloy, copper forms between 0.1% by weight and 30% by weight of the alloy and nickel forms between 0.1% by weight and 30% by weight of the alloy.

Abstract: The invention provides a solder alloy for bonding an oxide material, including more than 0% but not more than 1.0% of Mg and the balance being substantially Bi and Sn. Preferably, the alloy includes 0.01 to 0.6% of Mg, 35 to 86% of Bi, and the balance being substantially Sn. The invention can be used for bonding an oxide material, such as bonding glasses to each other. According to the invention, a low-cost solder joint of an oxide material is also provided.

Abstract: Problem A conventional alloy for a fusible plug contained harmful elements such as Cd or Pb, so there was a concern of pollution by these harmful elements. The present invention provides a fusible plug which does not contain the harmful components Cd or Pb, with which the alloy is not forced out of the fusible plug even when used for long periods as a safety device for refrigeration equipment, and which has a high mechanical strength such as creep strength. Means for Solving the Problem A fusible plug is used which employs a fusible alloy consisting essentially of 0.1-2.0 mass percent of Sn, 31-37 mass percent of Bi, and a remainder of In, the alloy melting at approximately at 70-75° C. A fusible plug is used which employs an alloy consisting essentially of 0.05-0.4 mass percent of Zn, 47-55 mass percent of Bi, and a remainder of In, the alloy melting at approximately 90-95° C.

Abstract: Lead-free solder compositions having a thermal conductivity are disclosed that include at least about 2% of silver, at least about 60% of bismuth, and at least one additional metal in an amount that will increase the thermal conductivity of the solder composition over a comparison solder composition consisting of silver and bismuth, wherein the at least one additional metal does not significantly modify the solidus temperature and does not shift the liquidus temperature outside of an acceptable liquidus temperature range.

Abstract: A melting temperature adjustable metal thermal interface material (TIM) is provided. The metal TIM includes In, Bi, Sn, and Ga. A content of Ga ranges from 0.01 wt % to 3 wt %. The metal TIM has an initial melting temperature lower than 60° C. and has no element hazardous to the environment.

Abstract: The present invention provides a water-soluble luminescent quantum dot, a biomolecular conjugate thereof and a composition comprising such a quantum dot or conjugate. Additionally, the present invention provides a method of obtaining a luminescent quantum dot, a method of making a biomolecular conjugate thereof, and methods of using a biomolecular conjugate for ultrasensitive nonisotopic detection in vitro and in vivo.

Abstract: Disclosed is a sliding member including an overlay layer made of a Bi based alloy comprising Cu as an essential element and at least one element selected from the group of Sn and In, wherein the Bi based alloy comprises 0.1 to 10 mass % of Cu and 0.5 to 10 mass % in total of the at least one element selected from the group of Sn and In.

Abstract: A process for producing an electrode material for a rechargeable lithium battery, comprising the steps of mixing a metal compound (a) of a metal (a′) capable of being electrochemically alloyed with lithium, a transition metal compound (b) of a transition metal (b′) and a complexing agent (c) with a solvent (d) to obtain a mixed solution, mixing a reducing agent (e) with said mixed solution to obtain a mixture, and oxidizing said reducing agent in said mixture to reduce ion of said metal (a′) and ion of said transition metal (b′) to obtain an amorphous alloy material capable of being electrochemically alloyed with lithium as said electrode material. An electrode structural body in which said electrode material is used, and a rechargeable lithium battery in which said electrode material is used.

Abstract: Disclosed is a sliding member including an overlay layer made of a Bi based alloy comprising Cu as an essential element and at least one element selected from the group of Sn and In, wherein the Bi based alloy comprises 0.1 to 10 mass % of Cu and 0.5 to 10 mass % in total of the at least one element selected from the group of Sn and In.

Abstract: An alloy type thermal fuse of an operating temperature of 75 to 120° C. is provided in which a fuse element of a Bi—In—Sn alloy is used, excellent aging and heat cycle resistances for a long term can be ensured, and satisfactory operating characteristic can be ensured.

Abstract: The invention concerns a lead-free solder comprising a bismuth-based alloy. The lead-free solder has a proportion of at least 80 percent by weight of bismuth and a solidus temperature of at least 260° C.

Abstract: Provided is a Pb-free solder composition having an excellent heat resistance which does not damage a glass substrate and parts on the substrate when the soldering is carried out on to an electrode pattern formed on the substrate. The Pb-free solder composition contains, for example, not less than about 90% by weight of Bi, from about 0.1% to 9.9% by weight of Ag and from about 0.1% to 3.0% by weight of Sb, based on the whole solder composition.

Abstract: Provided is a Pb-free solder composition having an excellent heat resistance which does not damage a glass substrate and parts on the substrate when the soldering is carried out on to an electrode pattern formed on the substrate. The Pb-free solder composition contains, for example, not less than about 90% by weight of Bi, from about 0.1% to 9.9% by weight of Ag and from about 0.1% to 3.0% by weight of Sb, based on the whole solder composition.

Abstract: The invention concerns a sputter target on a metal or metal alloy base with a melting point of not more than 750° C., especially tellurium alloy, with a microstructure of powder particles compacted by means of powder metallurgy, where the primary microstructure of the powder particles is very fine as compared with their size and where the particle size is clearly greater than the grain size of the primary microstructure.

Abstract: The present invention provides a water-soluble luminescent quantum dot, a biomolecular conjugate thereof and a composition comprising such a quantum dot or conjugate. Additionally, the present invention provides a method of obtaining a luminescent quantum dot, a method of making a biomolecular conjugate thereof, and methods of using a biomolecular conjugate for ultrasensitive nonisotopic detection in vitro and in vivo.