Abstract: A chemically amplified resist composition is provided comprising an acid generator and a quencher comprising a salt compound consisting of a nitrogen-containing cation and a 1,1,1,3,3,3-hexafluoro-2-propoxide anion having a trifluoromethyl, hydrocarbylcarbonyl or hydrocarbyloxycarbonyl group bonded thereto. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

Abstract: Methods for manufacturing articles of footwear are provided. In various aspects, the methods comprise utilizing additive manufacturing methods with foam particles. In some aspects, the disclosed methods comprise selectively depositing a binding material on foam particles in a target area such that the binding material coats at least a portion of defining surfaces of the foam particles with the binding material. The binding material is then cured to affix foam particles in the target area to one another. In various aspects, the disclosed methods can be used to manufacturer articles with sub-regions that differential levels of affixing between the foam particles, and thereby resulting in sub-regions with different properties such as density, resilience, and/or flexural modulus. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present disclosure.

Abstract: Provided is an organic electroluminescence device provided with a light absorber represented by Formula 1 below, and a light absorbing layer including the same. In Formula 1, Ar is pyrene, chrysene, or anthracene, and Y is a hydrogen atom or a substituent, and X is represented by any one of Formula 2-1 to 2-3 below.

Abstract: An optical device is provided. The optical device includes: a light source; a pinhole plate arranged on a path of input light between the light source and an objective lens; an image sensor configured to detect a reflected light generated by the input light being reflected by a sample; and a noise filter arranged on the path of the reflected light between the image sensor and the objective lens, and the noise filter may remove a part of the reflected light generated by underlying layers below a measurement target layer of the sample.

Abstract: An object of the present invention is to provide a pattern forming method which is excellent in developability and defect suppression performance. Another object of the present invention is to provide a method for producing an electronic device including the pattern forming method. Still another object of the present invention is to provide a kit capable of forming a pattern which is excellent in developability and defect suppression performance.

Abstract: A neutral layer composition and a neutral layer formed from the same are disclosed herein. In some embodiments, a neutral layer composition includes a random copolymer having a unit represented by Formula 1, and a unit containing an aromatic structure having one or more halogen atoms, wherein the molar amount of the unit represented by Formula 1 is present in a range of 9 mol % to 32 mol %, based on the total molar amount of the copolymer. The neutral layer can effectively control orientation characteristics of various block copolymers deposited thereon.

Abstract: A developing treatment method performs a developing treatment on a resist film on a substrate. The method includes: a pattern forming step of forming a resist pattern by supplying a developing solution to the substrate and developing the resist film on the substrate; a coating step of coating the developed substrate with an aqueous solution of a water-soluble polymer; and a rinse step of cleaning the substrate by supplying a rinse solution to the substrate coated with the aqueous solution of the water-soluble polymer.

Abstract: A resist composition is provided comprising a base polymer and a quencher comprising a salt compound consisting of a cyclic ammonium cation and a 1,1,1,3,3,3-hexafluoro-2-propoxide anion having a trifluoromethyl, hydrocarbylcarbonyl or hydrocarbyloxycarbonyl group bonded thereto. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

Abstract: The present invention provides a positive photoresist composition having excellent storage stability, sensitivity, developing properties, plating resistance, and heat resistance. More specifically, a specific dissolution inhibitor in the form of an oligomer having the same repeating unit structure as the resin contained in the photoresist composition is applied to said composition.

Abstract: A method for lithography patterning includes forming a first layer over a substrate, the first layer being radiation-sensitive, exposing the first layer to a radiation, mixing a first solution and a second solution, thereby forming a developer, and dispensing the developer to the exposed first layer to form a pattern over the substrate. The dispensing of the developer includes varying a concentration of a developing chemical in the developer in multiple stages, such that the concentration of the developing chemical in the developer increases from a first stage to a subsequent second stage, and increases from the second stage to a subsequent third stage real-time during the dispensing.

Abstract: A device includes a carriage movable relative to a build pad along a bi-directional travel path and supporting at least a radiation source and an applicator to selectively apply a plurality of fluid agents, including first fluid agents to affect a first material property. A timing and order of operation of the radiation source and the applicator, with the carriage, is to maintain first and second portions of a 3D object under formation within at least one selectable temperature range despite a first total volume of the first fluid agents for application onto the first portion of the 3D object being substantially greater than a second total volume of second fluid agents for application onto the second portion of the 3D object.

Abstract: In one preferred embodiment, polymers are provided that comprise a structure of the following Formula (I): Photoresists that comprises such polymers also are provided.

Abstract: A photosensitive resin composition comprising a polymer containing a silphenylene skeleton and a fluorene skeleton and having a crosslinkable site in the molecule, a phenol compound having a Mw of 300-10,000, a photoacid generator, and a benzotriazole or imidazole compound has improved film properties. Even from a thick film, a fine size pattern can be formed.

Abstract: The invention relates to a water-based ceramic three-dimensional laminate material and a method for using the same material to manufacture the ceramic objects, comprising: a step Sa of preparing a plurality of projected slice graphics and a slurry, wherein the projected slice graphics are formed by slicing a three-dimensional image along a specific direction with a specific thickness, the slurry is prepared by mixing the material powder, the photo-curing resin, the solvent and the additive; a step Sb of uniformly laying the slurry on the substrate to form a sacrificial layer; and a step Sc of uniformly laying the slurry on the slurry to form a reaction layer on the sacrificial layer; a step Sd of irradiating the reaction layer with a light beam according to one of the plurality of projected slice graphics, and the slurry is cured after being irradiated; a step Se of repeating steps Sc and Sd until a ceramic body is formed; a step Sf of washing the ceramic body with water or an organic solvent; and a step Sg o

Abstract: The radiation-sensitive resin composition contains: a polymer having a structural unit that includes an acid-labile group; and a compound represented by formula (1). In the formula (1), Ar1 represents a group obtained by removing (m+n+2) hydrogen atoms from an aromatic ring of an arene having 6 to 30 carbon atoms; —OH and —COO— are bonded at ortho positions to each other on a same benzene ring on Ar1; and RG represents a group represented by formula (V-1), a group represented by formula (V-2), a group including a lactone structure, a group including a cyclic carbonate structure, a group including a sultone structure, a group including a ketonic carbonyl group, a group including a thiocarbonate group, or a group including a group represented by formula (V-3), or the like.

Abstract: A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group and not containing a repeating unit having an aromatic substituent; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where W1 represents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms and containing a heteroatom; W2 represents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms and not containing a heteroatom; Rf represents a divalent organic group shown by the following general formula; and M+ represents an onium cation. This provides a resist composition and a patterning process that uses the resist composition that show a particularly favorable mask dimension dependency (mask error factor: MEF), LWR, and critical dimension uniformity (CDU) particularly in photolithography where a high-energy beam such as an ArF excimer laser beam is used as a light source.

Abstract: The present disclosure is drawn to fluid sets, material sets, and 3-dimensional printing systems. A fluid set can include a pretreat composition that includes a salt of an alkali metal with bromide or iodide. The fluid set can also include a conductive fusing agent composition including a transition metal for fusing thermoplastic powder when exposed to electromagnetic radiation.

Abstract: A method for producing a glass substrate according to the present invention includes the steps of: (I) forming a through hole (11) in a glass sheet (10); (II) forming a resin layer (20) on a first principal surface of the glass sheet (10) using a resin composition sensitive to light having a predetermined wavelength ?1; (III) photoexposing an area of the resin layer (20) that covers the through hole (11) by irradiating the area with light U having the wavelength ?1 and applied from the direction of a second principal surface of the glass sheet (10); and (IV) forming a through-resin hole (21) by removing the area photoexposed in the step (III). The glass sheet (10) protects the resin layer (20) from the light U so as to prevent the resin layer (20) from being photoexposed by beams of the light U that are incident on the second principal surface of the glass sheet (10) in the step (III).

Abstract: A resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1; and a solvent and a method of forming patterns using the resist underlayer composition: In Chemical Formula 1, at least one of A1 and A2 is a group represented by Chemical Formula A:

Abstract: Oxime ester compounds of the formula I, II, III, IV or V wherein Z is for example Z1 for is NO2, unsubstituted or substituted C7-C20 aroyl or unsubstituted or substituted C4-C20heteroaroyl; provided that at least one Z1 is other than NO2; Z2 is for example unsubstituted or substituted C7-C20aroyl; R1, R2, R3, R4, R5 and R6 for example are hydrogen, halogen, or unsubstituted or substituted C1-C20alkyl, unsubstituted or substituted C6-C20aryl, or unsubstituted or substituted C4-C20heteroaryl; R9, R10, R11, R12 and R13 for example are hydrogen, halogen, OR16, unsubstituted or substituted C1-C20alkyl; provided that R9 and R13 are neither hydrogen nor fluorine; R14 is for example unsubstituted or substituted C6-C20aryl or C3-C20heteroaryl Q is for example C6-C20arylene or C3-C20heteroarylene; Q1 is —C1-C20alkylene-CO—; Q2 is naphthoylene; Q3 is for example phenylene; L is for example O-alkylene-O—; R15 is for example hydrogen or C1-C20alkyl; R20 is for example hydrogen, or unsubstituted or substituted C1

Abstract: The present invention relates to a method of reducing the LWR (Line Width Roughness) of a photoresist pattern using a negative tone photoresist during the fabrication of a semiconductor, and more specifically to a composition capable of reducing LWR in order to ensure a higher pattern CDU after a negative tone development process, and a processing method using the composition, thus reducing the LWR, thereby providing better CDU than existing methods.

Abstract: The present invention relates to a method of reducing the LWR (Line Width Roughness) of a photoresist pattern using a negative tone photoresist during the fabrication of a semiconductor, and more specifically to a composition capable of reducing LWR in order to ensure a higher pattern CDU after a negative tone development process, and a processing method using the composition, thus reducing the LWR, thereby providing better CDU than existing methods.

Abstract: Provided is an organic electroluminescence device provided with a light absorber represented by Formula 1 below, and a light absorbing layer including the same. In Formula 1, Ar is pyrene, chrysene, or anthracene, and Y is a hydrogen atom or a substituent, and X is represented by any one of Formula 2-1 to 2-3 below.

Abstract: Methods, processes, and systems for the manufacture of three-dimensional articles made of polymers using 3D printing are provided. A layer of high performance polymer can be deposited on a build plate to form a powder bed. Then, a solution of a photothermal dye can be printed on the powder bed in a predetermined pattern. Alternatively, the photothermal dye can be added to the entire powder bed. Electromagnetic radiation can be applied, either to the entire bed or in a predetermined pattern, to form the final polymer. After a predetermined period of time, sequential layers are printed to provide the three-dimensional article. The three-dimensional object can be cured to produce the three-dimensional article composed of the final polymers.

Abstract: The present disclosure provides an organic transistor and a manufacturing method thereof, an array substrate, and a display device. The method for manufacturing the organic transistor includes: applying a photoresist on a side of an organic insulating layer; patterning the photoresist to form a confinement well; adding a solution of an organic semiconductor material and an orthogonal solvent to the confinement well; volatilizing the orthogonal solvent by an annealing process to induce directional growth of single crystal of the organic semiconductor material in the confinement well, thereby obtaining an organic single crystal layer; and removing remaining photoresist and using the organic single crystal layer as an active layer. The embodiment of the present disclosure produces an organic single crystal in a flexible display device at a low temperature, and the organic single crystal can be used as an active layer, resulting in an organic transistor having high mobility and stability.

Abstract: A lithographic apparatus having a substrate table, a projection system, an encoder system, a measurement frame and a measurement system. The substrate table has a holding surface for holding a substrate. The projection system is for projecting an image on the substrate. The encoder system is for providing a signal representative of a position of the substrate table. The measurement system is for measuring a property of the lithographic apparatus. The holding surface is along a plane. The projection system is at a first side of the plane. The measurement frame is arranged to support at least part of the encoder system and at least part of the measurement system at a second side of the plane different from the first side.

Abstract: A pattern forming method includes, in this order, forming a film on a substrate, using an active-light-sensitive or radiation-sensitive resin composition containing a resin (A) which has a repeating unit having a phenolic hydroxyl group, and a repeating unit having a group that decomposes by the action of an acid to generate a carboxyl group, and a compound (B) that generates an acid upon irradiation with active light or radiation; exposing the film; and developing the exposed film using a developer including an organic solvent, in which the developer including an organic solvent contains an organic solvent having 8 or more carbon atoms and 2 or less heteroatoms in the amount of 50% by mass or more.

Abstract: In one embodiment, a pattern forming method includes forming a first film on a substrate. The method further includes supplying energy to the first film to form a first region to which the energy have been supplied, and a second region including at least a region to which the energy has not been supplied. The method further includes impregnating at least the first region out of the first and second region with metal atoms. The method further includes developing the first film after impregnating the first region with the metal atoms to remove the second region while leaving the first region.

Abstract: Methods for manufacturing articles of footwear are provided. In various aspects, the methods comprise utilizing additive manufacturing methods with foam particles. In some aspects, the disclosed methods comprise selectively depositing a binding material on foam particles in a target area such that the binding material coats at least a portion of defining surfaces of the foam particles with the binding material. The binding material is then cured to affix foam particles in the target area to one another. In various aspects, the disclosed methods can be used to manufacturer articles with sub-regions that differential levels of affixing between the foam particles, and thereby resulting in sub-regions with different properties such as density, resilience, and/or flexural modulus. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present disclosure.

Abstract: The present disclosure is drawn to material sets for 3-dimensional printing, 3-dimensional printing systems, and 3-dimensional printed parts. A material set can include a polyamide polymer powder having an average particle size from 20 ?m to 120 ?m and a fusing agent. The polyamide-11 can have a solution viscosity from 1.5 to 1.75 at room temperature, and may increase by no more than 5% after exposure to 180° C. for 20 hours. The fusing agent can include an energy absorber capable of absorbing electromagnetic radiation to produce heat.

Abstract: This invention is related to a method of manufacturing an anti-glare cover. The method includes preparing a crosslinking precursor solution, wherein the precursor solution is an organic solution with crosslinkable polymer monomer and crosslinking initiator; applying the crosslinking precursor solution on a cover to form a crosslinking precursor layer; pre-crosslinking and crosslinking the crosslinking precursor layer to form a mesh crosslinked layer; etching the cover with acid solution and the mesh crosslinked layer acting as a hard mask to form an anti-glare microstructure on the cover; and removing the mesh crosslinked layer.

Abstract: A coating solution has a polymer having a formula (1) structural unit, a formula (2) primary, secondary, or tertiary amine, and a formula (3) ester capable of dissolving the polymer and amine: R1 is a hydrogen atom or methyl group. L is a divalent aromatic group optionally having at least one substituent, —C(?O)—O— group, or —C(?O)—NH— group. The —C(?O)—O— or —C(?O)—NH— group carbon atom is attached to a polymer main chain. X is a hydrogen atom or linear or branched alkyl or alkoxy group having a 1-10 carbon atom number. At least one alkyl group hydrogen atom is optionally substituted with a halogen atom or hydroxy group. R2, R3, and R4 are independently a hydrogen atom, hydroxy group, or linear, branched, or cyclic organic group having a 1-16 carbon atom number. R5 and R6 are each independently a linear or branched organic group having a 1-16 carbon atom number.

Abstract: The disclosure improves a position confirmation method for members in a plating tank. A plating apparatus for applying a plating process on a substrate is provided. The plating apparatus includes a plating tank, a first member disposed in the plating tank, a second member disposed opposite to the first member in the plating tank, an optical sensor disposed on one of the first and second members, and a plurality of detected parts disposed on the other of the first and second members to be detectable by the optical sensor.

Abstract: The present invention relates to a new rinse composition, the forming of resist patterns using the rinse composition, and a semiconductor device manufacturing method using the rinse composition in a photolithography method.

Abstract: A method for forming a 3D pattern structure on a 3D substrate and a device having color resist pattern is disclosed. The disclosure uses the fitting aids to apply pressure on the thin-film mask to paste on the 3D substrate. After the template device had formed, send the template device to the exposure machine, and then the high resolution photo-resist pattern is made on the 3D substrate. After a Lift-off procedure, the thin-film pattern is formed and the photo-resist is removed.

Abstract: A method and a device for prefixing substrates, whereby at least one substrate surface of the substrates is amorphized in at least one surface area, characterized in that the substrates are aligned and then make contact and are prefixed on the amorphized surface areas.

Abstract: A resist composition including a polymeric compound having 0 to 20 mol % of a structural unit containing a polar group-containing aliphatic hydrocarbon group, and an acid generator compound represented by general formula (b1-1) in which R101 represents a hydrocarbon group having at least 1 hydroxy group as a substituent; Y101 represents a single bond or a divalent linking group containing an oxygen atom; V101 represents a single bond, an alkylene group or a fluorinated alkylene group; R102 represents a fluorine atom or a fluorinated alkyl group of 1 to 5 carbon atoms; M?m+ represents an organic cation having a valency of m.

Abstract: A method for lithography patterning includes forming a first layer over a substrate, the first layer being radiation-sensitive. The method further includes exposing the first layer to a radiation. The method further includes applying a developer to the exposed first layer, resulting in a pattern over the substrate, wherein the developer includes a developing chemical whose concentration in the developer is a function of time during the applying of the developer.

Abstract: A litho-litho-etch double patterning method including forming a resist layer by coating a substrate with a resist composition; exposing the resist layer to a first radiant energy density of UV rays; forming a first pattern in the resist layer by developing the resist layer with a positive developer; exposing the resist layer to a second radiant energy density of UV rays; and forming a second pattern in the resist layer by developing the resist layer with a negative developer, the second pattern including one or more features of the first pattern.

Abstract: In a pattern forming method, a resist layer disposed on a wafer is exposed by an energy beam. A post-exposure-bake (PEB) is performed on the wafer with the exposed resist layer by using a PEB apparatus. After the PEB, the exposed resist layer is developed, thereby forming a resist pattern. The PEB apparatus includes a baking plate, and the wafer is placed on the baking plate for the PEB when a temperature of the wafer is within a predetermined temperature range.

Abstract: A method and a device for prefixing substrates, whereby at least one substrate surface of the substrates is amorphized in at least one surface area, characterized in that the substrates are aligned and then make contact and are prefixed on the amorphized surface areas.

Abstract: A monomer, an organic layer composition including the monomer, an organic layer, and a method of forming patterns, the monomer being represented by Chemical Formula 1:

Abstract: A method for manufacturing a semiconductor device includes providing a substrate structure including a substrate, semiconductor fins extending in a first direction on the substrate, a hardmask layer on the semiconductor fins, and an isolation region surrounding the semiconductor fins and having an upper surface flush with the hardmask layer, the isolation region including a first region on a side of the semiconductor fins in the first direction and a second region on a side of the semiconductor fins in a second direction different from the first direction. The method also includes removing the hardmask layer, etching a portion of the first region above the semiconductor fins, forming a mask layer on the semiconductor fins and a remaining first region, etching the second region such that an upper surface of the remaining second region is lower than an upper surface of the semiconductor fins, and removing the mask layer.

Abstract: A photosensitive resin composition includes a binder resin, a black colorant, a photopolymerizable monomer, a photopolymerization initiator, and a solvent. The binder resin includes a first binder resin having a glass transition temperature of about ?50° C. to about 150° C. and a second binder resin having a glass transition temperature of greater than about 150° C.

Abstract: A photo-sensitive layer is applied over a wafer. The photo-sensitive layer is exposed. In some embodiments, the photo-sensitive layer is exposed to EUV light. The photo-sensitive layer is baked. The photo-sensitive layer is developed. Humidity is introduced in at least one of: the applying, the baking, or the developing.

Abstract: Organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that comprise 1) one or more resins and 2) one or more substituted isocyanurate compounds that are distinct from the 1) one or more resins.

Abstract: According to one example, there in provided a system for processing three-dimensional object data representing a three-dimensional object to be generated by an additive manufacturing system. The system comprises a processor to perform a transformation on the three-dimensional object data, and to generate a plurality of slice images from the transformed three dimensional object data.

Abstract: A method is used to provide an electrically-conductive polyaniline pattern by providing a uniform layer of a photocurable composition on a substrate. The photocurable composition comprises a water-soluble reactive polymer comprising (a) greater than 40 mol % of recurring units comprising sulfonic acid or sulfonate groups, and (b) at least 5 mol % of recurring units comprising a pendant group capable of crosslinking via [2+2] photocycloaddition. The photocurable composition is exposed to cause crosslinking via [2+2] photocycloaddition of the (b) recurring units, thereby forming a crosslinked polymer. Any remaining water-soluble reactive polymer is removed. The crosslinked polymer is contacted with an aniline reactive composition having aniline monomer and up to 0.5 molar of an aniline oxidizing agent, thereby forming an electrically-conductive polyaniline disposed either within, on top of, or both within and on top of, the crosslinked polymer.

Abstract: Provided are methods of trimming photoresist patterns. The methods involve coating a photoresist trimming composition over a photoresist pattern, wherein the trimming composition includes a matrix polymer, a free acid having fluorine substitution and a solvent, the trimming composition being free of cross-linking agents. The coated semiconductor substrate is heated to cause a change in polarity of the resist polymer in a surface region of the photoresist pattern. The photoresist pattern is contacted with a developing solution to remove the surface region of the photoresist pattern. The methods find particular applicability in the formation of very fine lithographic features in the manufacture of semiconductor devices.

Abstract: A resist composition includes (A1) a resin which includes a structural unit represented by formula (a4), a structural unit having a cyclic carbonate and a structural unit represented by formula (I), the resin has no acid-labile group; (A2) a resin which has an acid-labile group; and an acid generator: wherein R3 represents a hydrogen atom or a methyl group, R4 represents a C1 to C24 saturated hydrocarbon group having a fluorine atom, and a methylene group contained in the saturated hydrocarbon group may be replaced by an oxygen atom or a carbonyl group, R1 represents a hydrogen atom or a methyl group, and L1 represents a single bond or a C1 to C18 divalent saturated hydrocarbon group where a methylene group may be replaced by an oxygen atom or a carbonyl group, and R2 represents a C3 to C18 alicyclic hydrocarbon group where a hydrogen atom may be replaced by a C1 to C8 aliphatic hydrocarbon group or a hydroxy group, provided that the carbon atom directly bonded to L1 has no aliphatic hydrocarbon group by