Of Purger, Purge Period, Scavenger Or Cleaner Patents (Class 432/41)
  • Publication number: 20140287373
    Abstract: A device for heating a substrate according to a predetermined temperature profile for crystallizing a material on the substrate includes: a housing, at least a process chamber situated inside the housing and provided with a first and second opening for passing through a substrate, an inlet for introducing a process gas which includes the material in vapour phase into the chamber, at least two transport rollers attached to the housing for transporting the substrate into the chamber. The device further includes passage spaces for preventing the escape of process gas from the chamber to a space between the chamber and housing, which are situated near respective ends of the transport rollers in the chamber, the respective passage spaces having a first passage opening on an inner wall of the chamber, a second passage opening on an outer wall of the chamber and a first flange fixed around the transport roller.
    Type: Application
    Filed: October 25, 2012
    Publication date: September 25, 2014
    Inventors: Gerard Kaper, Wiro Rudolf Zijlmans
  • Patent number: 8662886
    Abstract: The present invention relates generally to semiconductor wafer fabrication and more particularly but not exclusively to advanced process control methodologies for controlling oxide formation using pressure. The present invention, in one or more implementations, includes a pressure stabilization system to dynamically adjust scavenger pressure in a furnace during wafer fabrication in relation to a pressure formation range, value, or one or more pressure indicators in a wafer fabrication process.
    Type: Grant
    Filed: November 12, 2007
    Date of Patent: March 4, 2014
    Assignee: Micrel, Inc.
    Inventor: Miles Dudman
  • Publication number: 20120328999
    Abstract: A device for managing unburned residues, the device comprising a regenerator (5) having one end connected to a combustion enclosure (3) and an opposite end connected to a fuel admission pipe (4) and a flue gas exhaust pipe (8), the pipes being fitted with valves (2; 10) to alternate between an admission stage and an exhaust stage through the regenerator. A purge circuit (1) connected to the regenerator (5) acts before the exhaust stage to purge the regenerator of the fuel that it contains. The invention provides a corresponding method of managing unburned residues and a burner including such a device.
    Type: Application
    Filed: June 27, 2012
    Publication date: December 27, 2012
    Applicant: COCKERILL MAINTENANCE & INGENIERIE SA
    Inventors: Yves BRAUD, Ludovic FERRAND, Luc MALPAS
  • Publication number: 20110036279
    Abstract: The invention uses an input signal directly from a fuel flow device to control the amount of ammonia injected into a flue gas stream for NOx reduction for boilers. The control system receives a signal directly from a fuel flow device that indicates the amount of fuel flow and corresponding NOx emissions. The signal is processed using an algorithm with a multi-loop controller and an ammonia mass flow control valve with temperature and pressure corrections to determine how much ammonia must be injected into the flue gas in the presence of a catalyst to achieve the desired NOx emissions reductions. A dilution air blower transports ammonia to an injection grid and subsequently, the ammonia reacts with the flue gas in the presence of a catalyst to reduce the amount of NOx emissions to the desired level.
    Type: Application
    Filed: August 12, 2009
    Publication date: February 17, 2011
    Inventors: Jeffrey Shallcross, Larry Day, David Spain, James Souza
  • Publication number: 20090191499
    Abstract: Methods and apparatuses for heat treatment of semiconductor wafers are disclosed herein. A method of heating a semiconductor wafer in accordance with one embodiment includes heating the wafer in a loading enclosure of a heat treatment system above an ambient temperature external to the loading enclosure. The method also includes moving the heated wafer from the loading enclosure into a processing enclosure of the heat treatment system. In particular embodiments, the method can further include heating a flow of purge gas above the ambient temperature and introducing the flow of heated purge gas into the loading enclosure while the wafer is in the loading enclosure. In still further embodiments, the method can include heating a flow of process gas to a processing temperature and introducing the heated flow of process gas into the processing enclosure while the wafer is in the processing enclosure.
    Type: Application
    Filed: January 25, 2008
    Publication date: July 30, 2009
    Applicant: Micron Technology, Inc.
    Inventors: Shyam Surthi, Scott E. Moore
  • Publication number: 20090176181
    Abstract: The present invention relates generally to semiconductor wafer fabrication and more particularly but not exclusively to advanced process control methodologies for controlling oxide formation using pressure. The present invention, in one or more implementations, includes a pressure stabilization system to dynamically adjust scavenger pressure in a furnace during wafer fabrication in relation to a pressure formation range, value, or one or more pressure indicators in a wafer fabrication process.
    Type: Application
    Filed: November 12, 2007
    Publication date: July 9, 2009
    Applicant: MICREL, INC.
    Inventor: Miles DUDMAN
  • Publication number: 20070231764
    Abstract: Provided is an equipment having a safety mechanism in hardware. The equipment is arranged such that a third relay (9) is controlled by a third contact driving circuit (11) as hardware so that an igniter (2) and a fuel supply valve (3) become operable when a blower is operated and a certain amount of time elapses. The equipment is arranged so as to complement drawbacks of software by the safety mechanism of hardware. The third contact driving circuit (11) is composed of a voltage multiplying rectifier circuit (27) containing a time constant circuit (13), an oscillating circuit (28) on a secondary side of the voltage multiplying rectifier circuit (27), a contact driving part (relay driving circuit) (37) on a secondary side of the oscillating circuit (28), and the like. The third relay (9) is connected to a part of the contact driving part (37).
    Type: Application
    Filed: March 16, 2007
    Publication date: October 4, 2007
    Inventor: Seiji Tanaka
  • Publication number: 20010016306
    Abstract: Method for purging a furnace comprising a closable processing tube defining in its interior a closable, processing space, a purging gas being flowed along the outer surface of the processing tube separated from the processing gas flow inside the processing tube, wherein said processing gas flow comprises a gas being reactive with air at elevated temperature and said purging gas comprises an inert gas. A furnace assembly for realizing this method is proposed comprising a controller for controlling force connected in a conduit connected to a source of reactive and inert gas respectively. This controller is realized such that only after placing the closure of the processing chamber in the closing position the valve in the supply conduit for reactive gas can be opened and said closure can only be removed from said closing position after said valve in supply conduits for reactive gas has been closed.
    Type: Application
    Filed: November 29, 2000
    Publication date: August 23, 2001
    Inventors: Pieter Johannes Quintus Van Voorst Vader, Jeron Jan Stoutjesdijk, Theodorus Michael De Rooij, Cornelis Marinus Kooijman
  • Patent number: 5174748
    Abstract: A reactor (100) is provided which comprises an enclosure (1,2,3) which has along its longitudinal axis (4--4') a hot zone (1), a cold zone (2) and between the hot and the cold zone an intermediate zone (3) and which has at least one gas inlet tube (12,32). The reactor further comprises a heat-insulating plug (30) for being positioned in the intermediate zone (3) to prevent a gas-flow from the hot zone (1) to the cold zone (2) of the enclosure (1,2,3) and coupling means (13,102;33,36) for transmitting gas from the gas inlet tube (12;32) into the hot zone (1). The use of the heat insulating plug (30) prevents deposition of unwanted material on the walls of the cold zone (2) of the reactor.
    Type: Grant
    Filed: September 10, 1991
    Date of Patent: December 29, 1992
    Assignee: U.S. Philips Corp.
    Inventors: Claude Foucher, Jose Maluenda
  • Patent number: 5118286
    Abstract: Mixing of spent reactant gases with ambient air inside a semiconductor wafer fabrication facility is avoided and consequently corrosion of a scavenger box in a wafer fabrication facility is avoided. Repeatability of reaction gas results on wafers in a process tube is improved by maintaining precisely constant pressure in the wafer processing tube, which is operated close to ambient atmospheric pressure. This is accomplished by positioning an exhaust tube downstream from the wafers in the processing tube at a location that results in a uniform, repeatable reaction gas flow pattern between the wafers. Pressures at or near that point are measured by a differential manometer referenced to ambient atmospheric pressure to produce a pressure-indicating signal. The pressure indicating signal is electronically compared with a preset constant signal representative of the desired constant pressure at the pressure measurement point to produce an error signal.
    Type: Grant
    Filed: January 17, 1991
    Date of Patent: June 2, 1992
    Assignee: Amtech Systems
    Inventor: Michael C. Sarin
  • Patent number: 4318690
    Abstract: A process for automatically venting noncondensable contaminants from a number of process vessels heated with an organic heat transfer vapor medium involves monitoring the temperature at each vessel and intermittently venting all vessels simultaneously in response to a temperature drop at any one vessel. By venting intermittently for a predetermined period energy is conserved. Equipment costs are minimized by simultaneous venting through a single control valve.
    Type: Grant
    Filed: October 16, 1980
    Date of Patent: March 9, 1982
    Assignee: E. I. Du Pont de Nemours and Company
    Inventor: William J. Duncan