Abstract: In a described example, a bipolar junction transistor includes a substrate. An emitter region, a base region, and a collector region are each formed in the substrate. A gate-type structure is formed on the substrate between the base region and the emitter region. A contact is coupled to the gate-type structure, and the contact is adapted to be coupled to a source of DC voltage.

Abstract: A first region is formed by injecting a first condition type first dopant into a surface layer portion of an IGBT section of a semiconductor substrate. A second region is formed by injecting a second condition type second dopant into a region of the IGBT section shallower than the first region. An amorphous third region is formed by injecting the first conduction type third dopant into a surface layer portion of a diode section at a concentration higher than that of the second dopant. Thereafter, the IGBT section and the diode section are laser-annealed under conditions in which the third region is partially melted and the first dopant is activated. Subsequently, a surface layer portion which is shallower than the second injection region in the entire region of the IGBT section and the diode section is melted and crystallized by annealing the IGBT section and the diode section.

Abstract: Methods for printing a conductive object are provided which may comprise dispensing one of a first ink composition and a second ink composition towards a substrate surface to form a deposition region on the substrate surface or on a previously printed object on the substrate surface, wherein the first ink composition comprises an aqueous solution of a metal compound and the second ink composition comprises an aqueous solution of a stable free radical; dispensing the other of the first and second ink compositions in the deposition region to mix the first and second ink compositions and induce chemical reduction of the metal compound by the stable free radical and precipitation of the metal of the metal compound; and removing solvent from the deposition region, thereby forming a conductive object comprising the precipitated metal.

Abstract: Embodiments provide a method for manufacturing a bipolar junction transistor, comprising: providing a semiconductor substrate comprising a buried layer of a first conductive type; doping the semiconductor substrate in a collector implant region, to obtain a collector implant of the first conductive type extending parallel to a surface of the semiconductor substrate and from the surface of the semiconductor substrate to the buried layer; providing a base layer of a second conductive type on the surface of the semiconductor substrate, the base layer covering the collector implant; providing a sacrificial emitter structure on the base layer, wherein a projection of an area of the sacrificial emitter structure is enclosed by an area of the collector implant; and partially counter doping the collector implant through an area of the base layer surrounding an area of the base layer that is covered by the sacrificial emitter structure.

Abstract: A method of forming a semiconductor device is provided including the steps of providing a silicon-on-insulator (SOI) substrate comprising a semiconductor bulk substrate, a buried insulation layer formed on the semiconductor bulk substrate and a semiconductor layer positioned on the buried insulation layer, and forming a first transistor device, wherein forming the first transistor device includes forming a channel region in the semiconductor bulk substrate and forming a gate insulation layer over the channel region partially of a part of the buried insulation layer and wherein forming the gate insulation layer includes oxidizing a part of the semiconductor layer.

Abstract: A device includes a substrate, a first well doped with dopants of a first conductivity type defined in the substrate, and a second well doped with dopants of a second conductivity type different than the first conductivity type defined in the substrate adjacent the first well to define a PN junction. The second well includes a silicon alloy portion displaced from the PN junction. A collector region contacts one of the first or second wells and has a dopant concentration higher than its contacted well. An emitter region contacts the other of the first or second wells and is doped with dopants of the first or second conductivity type different than the first or second well contacted by the emitter region. A base region contacts the other of the first or second well and has a dopant concentration higher than the first or second well contacted by the base region.

Abstract: III-N semiconductor heterostructures on III-N epitaxial islands laterally overgrown from a mesa of a silicon substrate. An IC may include a III-N semiconductor device disposed on the III-N epitaxial island overhanging the silicon mesa and may further include a silicon-based MOSFET monolithically integrated with the III-N device. Lateral epitaxial overgrowth from silicon mesas may provide III-N semiconductor regions of good crystal quality upon which transistors or other active semiconductor devices may be fabricated. Overhanging surfaces of III-N islands may provide multiple device layers on surfaces of differing polarity. Spacing between separate III-N islands may provide mechanical compliance to an IC including III-N semiconductor devices. Undercut of the silicon mesa may be utilized for transfer of III-N epitaxial islands to alternative substrates.

Abstract: To provide a semiconductor device capable of retaining data for a long period. The semiconductor device includes a memory circuit and a retention circuit. The memory circuit includes a first transistor, and the retention circuit includes a second transistor. The memory circuit is configured to write data by turning on the first transistor and to retain the data by turning off the first transistor. The retention circuit is configured to supply a first potential at which the first transistor is turned off to a back gate of the first transistor by turning on the second transistor and to retain the first potential by turning off the second transistor. Transistors having different electrical characteristics are used as the first transistor and the second transistor.

Abstract: After forming a trench extending through an insulator layer and an underlying top semiconductor portion that is comprised of a first semiconductor material and a dopant of a first conductivity type to define an emitter and a collector on opposite sides of the trench in the top semiconductor portion, an intrinsic base comprising a second semiconductor material having a bandgap less than a bandgap of the first semiconductor material and a dopant of a second conductivity type opposite the first conductivity type is formed in a lower portion the trench by selective epitaxial growth. The intrinsic base protrudes above the top semiconductor portion and is laterally surrounded by entire top semiconductor portion and a portion of the insulator layer. An extrinsic base is then formed on top of the intrinsic base to fill a remaining volume of the trench by a deposition process.

Abstract: A semiconductor structure includes a semiconductor substrate, and an NMOS device at a surface of the semiconductor substrate, wherein the NMOS device comprises a Schottky source/drain extension region. The semiconductor structure further includes a PMOS device at the surface of the semiconductor substrate, wherein the PMOS device comprises a source/drain extension region comprising only non-metal materials. Schottky source/drain extension regions may be formed for both PMOS and NMOS devices, wherein the Schottky barrier height of the PMOS device is reduced by forming the PMOS device over a semiconductor layer having a low valence band.

Abstract: An object of the present invention is to provide a semiconductor device having a fin-type transistor that is excellent in characteristics by forming a fin-shaped semiconductor portion and a gate electrode with high precision or by making improvement regarding variations in characteristics among elements. The present invention is a semiconductor device including a fin-shaped semiconductor portion having a source region formed on one side thereof and a drain region formed on the other side thereof, and a gate electrode formed between the source region and the drain region to surround the fin-shaped semiconductor portion with a gate insulating film interposed therebetween. One solution for solving the problem according to the invention is that the gate electrode uses a metal material or a silicide material that is wet etchable.

Abstract: Methods for fabricating a backside device contact using a silicon-on-insulator substrate that includes a device layer, a buried insulator layer, and a handle wafer. A trench is formed that extends through the device layer or a trench isolation region in the device layer and that further extends partially through the buried insulator layer. A sacrificial material is deposited in the trench and, thereafter, at least one dielectric layer is formed on the device layer. An opening is formed in the at least one dielectric layer that communicates with the trench. After the opening is formed, the sacrificial material is removed from the trench with access through the opening. After the sacrificial material is removed from the trench, the trench is filled with a contact plug and the opening is filled with a contact coupled with the contact plug.

Abstract: The invention generally related to a method for preparing a layer of graphene directly on the surface of a substrate, such as a semiconductor substrate. The layer of graphene may be formed in direct contact with the surface of the substrate, or an intervening layer of a material may be formed between the substrate surface and the graphene layer.

Abstract: A method includes providing a semiconductor substrate, and performing an ion implantation process to a surface of the substrate. The ion implantation process includes intermittently applying an ion beam to the surface, and while applying the ion beam, applying a heating process with a heating temperature above a threshold level.

Abstract: Embodiments of the present disclosure provide a method of making a metal-oxide semiconductor (MOS) device. The method comprises providing an apparatus that comprises a common source and drain well disposed within a substrate, and a gate disposed on the substrate, wherein the gate is substantially encapsulated within layers of the apparatus. The method further comprises removing a portion of the substrate and creating a shallow trench isolation (STI) structure through the substrate such that the STI structure engages the common source and drain well.

Abstract: Device structures, fabrication methods, and design structures for a bipolar junction transistor. A first isolation region is formed in a substrate to define a lateral boundary for an active device region and an intrinsic base layer is formed on the substrate. The intrinsic base layer has a section overlying the active device region. After the intrinsic base layer is formed, the first isolation region is partially removed adjacent to the active device region to define a trench that is coextensive with the substrate in the active device region and that is coextensive with the first isolation region. The trench is at least partially filled with a dielectric material to define a second isolation region.

Abstract: Three-dimensionally integrated semiconductor systems include a photoactive device operationally coupled with a current/voltage converter on a semiconductor-on-insulator (SeOI) substrate. An optical interconnect is operatively coupled to the photoactive device. A semiconductor device is bonded over the SeOI substrate, and an electrical pathway extends between the current/voltage converter and the semiconductor device bonded over the SeOI substrate. Methods of forming such systems include forming a photoactive device on an SeOI substrate, and operatively coupling a waveguide with the photoactive device. A current/voltage converter may be formed over the SeOI substrate, and the photoactive device and the current/voltage converter may be operatively coupled with one another. A semiconductor device may be bonded over the SeOI substrate and operatively coupled with the current/voltage converter.

Abstract: An isolation area (10) is provided over a drift region (12) with a spacing (d) to a contact area (4) provided for a drain connection (D). The isolation area is used as an implantation mask, in order to produce a dopant profile of the drift region in which the dopant concentration increases toward the drain. The implantation of the dopant can be performed instead before the production of the isolation area, and the later production of the isolation area (10) changes the dopant profile also in a way that the dopant concentration increases toward the drain.

Abstract: Subject matter disclosed herein relates to a method of manufacturing a semiconductor integrated circuit device, and more particularly to a method of fabricating a charge trap NAND flash memory device.

Abstract: A fin structure suitable for a FinFET and having a buried insulator layer is disclosed. In an exemplary embodiment, a semiconductor device comprises a substrate with a first semiconductor material and having a fin structure formed thereupon. The fin structure includes a lower region proximate to the substrate, a second semiconductor material disposed on the lower region, a third semiconductor material disposed on the second semiconductor material, and an insulating material selectively disposed on the second semiconductor material such that the insulating material electrically isolates a channel region of the fin structure and further such that the insulating material exerts a strain on the channel region. The semiconductor device further comprises an isolation feature disposed adjacent to the fin structure.

Abstract: Embodiments for the present disclosure include a semiconductor device, an ultra-high voltage (UHV) laterally-diffused metal-oxide-semiconductor (LDMOS) transistor, and methods of forming the same. An embodiment includes a first well region of a first conductivity type in a top surface of a substrate, and a second well region of a second conductivity type in the top surface of the substrate. The second well region laterally separated from the first well region by a portion of the substrate. The embodiment further includes a third region of the second conductivity type in the first well region, and a first field oxide region in the first well region, a second field oxide region in the second well region, the second field oxide region having a second bottom surface, and the first field oxide region having a first bottom surface lower than the second bottom surface and on and directly contacting the third region.

Abstract: The present invention provides a method for determining BSIMSOI4 Direct Current (DC) model parameters, where a plurality of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices of a body leading-out structure and of different sizes, and a plurality of MOSFET devices of a floating structure and of different sizes are provided; Id-Vg-Vp, Id/Ip-Vd-Vg, Ig-Vg-Vd, Ig-Vp, Ip-Vg-vd, Is/Id-Vp, and Id/Ip-Vp-Vd properties of all the MOSFET devices of a body leading-out structure, and Id-Vg-Vp, Id-Vd-Vg, and Ig-Vg-Vd properties of all the MOSFET devices of a floating structure are measured; electrical property curves without a self-heating effect of each MOSFET device of a body leading-out structure and each MOSFET device of a floating structure are obtained; and then DC parameters of a BSIMSOI4 model are successively extracted according to specific steps.

Abstract: A fin field effect transistor (FET) including a fin structure and a method for forming the fin FET are provided. In an exemplary method, the fin FET can be formed by forming at least one fin seed, including a top surface and sidewalls, on a substrate. A first semiconductor layer can then be formed at least on the sidewalls of the at least one fin seed. A second semiconductor layer can be formed on the first semiconductor layer. The second semiconductor layer and the at least one fin seed can be made of a same material. The first semiconductor layer can be removed to form a fin structure including the at least one fin seed and the second semiconductor layer.

Abstract: A transistor includes a first emitter layer area, a second emitter layer area, wherein the second emitter layer area is separate from the first emitter layer area, a first metal formed on the first emitter layer area, a second metal formed on the second emitter layer area, a base, and a base metal formed on the base and on the second metal. The first emitter layer area is an emitter of the transistor and the first metal provides an emitter contact. The base metal on the base and on the second metal provides a base contact.

Abstract: Three-dimensional germanium-based semiconductor devices formed on globally or locally isolated substrates are described. For example, a semiconductor device includes a semiconductor substrate. An insulating structure is disposed above the semiconductor substrate. A three-dimensional germanium-containing body is disposed on a semiconductor release layer disposed on the insulating structure. The three-dimensional germanium-containing body includes a channel region and source/drain regions on either side of the channel region. The semiconductor release layer is under the source/drain regions but not under the channel region. The semiconductor release layer is composed of a semiconductor material different from the three-dimensional germanium-containing body. A gate electrode stack surrounds the channel region with a portion disposed on the insulating structure and laterally adjacent to the semiconductor release layer.

Abstract: The invention generally related to a method for preparing a layer of graphene directly on the surface of a substrate, such as a semiconductor substrate. The layer of graphene may be formed in direct contact with the surface of the substrate, or an intervening layer of a material may be formed between the substrate surface and the graphene layer.

Abstract: A method of forming a semiconductor structure that includes forming a first recess and a second recess between a first pair of sidewall spacers and a second pair of sidewall spacers respectively, the first and second pair of sidewall spacers surrounding a fin on top of a buried dielectric layer, the fin is formed from a top most semiconductor layer of a semiconductor-on-insulator substrate. A high-k dielectric layer is deposited within the first and second recesses and a dummy titanium nitride layer is deposited on the high-k dielectric layer. The high-k dielectric layer and the dummy titanium nitride layer are removed from the second recess and a silicon cap layer is deposited within the first and second recesses. Next, dopants are implanted into the silicon cap layer in the second recess without implanting dopants into the silicon cap layer in the first recess to form a BJT device.

Abstract: Semiconductor device structures and related fabrication methods are provided. An exemplary semiconductor device structure includes a collector region of semiconductor material having a first conductivity type, a base region of semiconductor material within the collector region, the base region having a second conductivity type opposite the first conductivity type, and a doped region of semiconductor material having the second conductivity type, wherein the doped region is electrically connected to the base region and the collector region resides between the base region and the doped region. In exemplary embodiments, the dopant concentration of the doped region is greater than a dopant concentration of the collector region to deplete the collector region as the electrical potential of the base region exceeds that of the collector region.

Abstract: The present invention puts forward a body-contact SOI transistor structure and method of making. The method comprises: forming a hard mask layer on the SOI; etching an opening exposing SOI bottom silicon; wet etching an SOI oxide layer through the opening; depositing a polysilicon layer at the opening followed by anisotropic dry etching; depositing an insulating dielectric layer at the opening followed by planarization; forming a gate stack structure by deposition and etching, and forming source/drain junctions of the transistor using ion implantation. By using the present invention, body contact for SOI field-effect transistors can be effectively formed, thereby eliminating floating-body effect in the SOI field-effect transistors, and improving heat dissipation capability of the SOI transistors and associated integrated circuits.

Abstract: A semiconductor device includes a first type region including a first conductivity type. The semiconductor device includes a second type region including a second conductivity type. The semiconductor device includes a channel region extending between the first type region and the second type region. The semiconductor device includes a gate region surrounding the channel region. The gate region includes a gate electrode. A gate electrode length of the gate electrode is less than about 10 nm. A method of forming a semiconductor device is provided.

Abstract: Fabrication methods for a bipolar junction transistor. A semiconductor material layer is formed on a substrate and a mask layer is formed on the semiconductor material layer. The mask layer is patterned to form a plurality of openings to the semiconductor material layer. After the mask layer is formed and patterned, the semiconductor material layer is etched at respective locations of the openings to define a first trench, a second trench separated from the first trench by a first section of the semiconductor material layer defining a terminal of the bipolar junction transistor, and a third trench separated from the first trench by a second section of the semiconductor material layer defining an isolation pedestal. A trench isolation region is formed at a location in the substrate that is determined at least in part using the isolation pedestal as a positional reference.

Abstract: A semiconductor structure including a body-contacted finFET device and methods form manufacturing the same. The method may include forming one or more semiconductor fins on a SOI substrate, forming a semiconductive body contact region connected to the bottom of the fin(s) in the buried insulator region, forming a sacrificial gate structure over the body region of the fin(s), forming a source region on one end of the fin(s), forming a drain region on the opposite end of the fin(s), replacing the sacrificial gate structure with a metal gate, and forming electrical contacts to the source, drain, metal gate, and body contact region. The method may further include forming a body contact fin contemporaneously with the finFET fins that is in contact with the body contact region, through which electrical contact to the body contact region is made.

Abstract: Some structures and methods to reduce power consumption in devices can be implemented largely by reusing existing bulk CMOS process flows and manufacturing technology, allowing the semiconductor industry as well as the broader electronics industry to avoid a costly and risky switch to alternative technologies. Some of the structures and methods relate to a Deeply Depleted Channel (DDC) design, allowing CMOS based devices to have a reduced sVT compared to conventional bulk CMOS and can allow the threshold voltage VT of FETs having dopants in the channel region to be set much more precisely. The DDC design also can have a strong body effect compared to conventional bulk CMOS transistors, which can allow for significant dynamic control of power consumption in DDC transistors. Additional structures, configurations, and methods presented herein can be used alone or in conjunction with the DDC to yield additional and different benefits.

Abstract: There is provided a semiconductor device and a method for manufacturing a semiconductor device. Within the N-type semiconductor layer formed from a high resistance N-type substrate, the P-type well diffusion layer and P-type extraction layer are formed and are fixed to ground potential. Due thereto, a depletion layer spreading on the P-type well diffusion layer side does not reach the interlayer boundary between the P-type well diffusion layer and the buried oxide film. Hence, the potential around the surface of the P-type well diffusion layer is kept at a ground potential. Accordingly, when the voltages are applied to the backside of the N-type semiconductor layer and a cathode electrode, a channel region at the MOS-type semiconductor formed as a P-type semiconductor layer is not activated. Due thereto, leakage current that may occur independently of a control due to the gate electrode of a transistor can be suppressed.

Abstract: It is an object of the present invention to provide a method for manufacturing an SOI substrate having an SOI layer that can be used in practical applications with high yield even when a flexible substrate such as a glass substrate or a plastic substrate is used. Further, it is another object of the present invention to provide a method for manufacturing a thin semiconductor device using such an SOI substrate with high yield. When a single-crystal semiconductor substrate is bonded to a flexible substrate having an insulating surface and the single-crystal semiconductor substrate is separated to manufacture an SOI substrate, one or both of bonding surfaces are activated, and then the flexible substrate having an insulating surface and the single-crystal semiconductor substrate are attached to each other.

Abstract: A method for reducing irregularities at a surface of a layer transferred from a source substrate to a glass-based support substrate, by generating a weakening zone in the source substrate; contacting the source substrate and the glass-based support substrate; and splitting the source substrate at the weakening zone; wherein the glass-based substrate has a thickness of between 300 ?m and 600 ?m.

Abstract: A MEMS device with movable MEMS structure and electrodes is produced by fabricating electrodes and shielding the electrodes with diamond buttons during subsequent fabrication steps, such as the etching of sacrificial oxide using vapor HF. In some embodiments, the diamond buttons are removed after the movable MEMS structure is released.

Abstract: A semiconductor device has an interposer frame mounted over a carrier. A semiconductor die has an active surface and bumps formed over the active surface. The semiconductor die can be mounted within a die opening of the interposer frame or over the interposer frame. Stacked semiconductor die can also be mounted within the die opening of the interposer frame or over the interposer frame. Bond wires or bumps are formed between the semiconductor die and interposer frame. An encapsulant is deposited over the interposer frame and semiconductor die. An interconnect structure is formed over the encapsulant and bumps of the first semiconductor die. An electronic component, such as a discrete passive device, semiconductor die, or stacked semiconductor die, is mounted over the semiconductor die and interposer frame. The electronic component has an I/O count less than an I/O count of the semiconductor die.

Abstract: A finFET with self-aligned punchthrough stopper and methods of manufacture are disclosed. The method includes forming spacers on sidewalls of a gate structure and fin structures of a finFET device. The method further includes forming a punchthrough stopper on exposed sidewalls of the fin structures, below the spacers. The method further includes diffusing dopants from the punchthrough stopper into the fin structures. The method further includes forming source and drain regions adjacent to the gate structure and fin structures.

Abstract: A circuit configuration and methods for controlling parameters of a bipolar junction transistor (BJT) fabricated on a substrate. A bias voltage is electrically coupled to the substrate and can be adjusted to alter the working parameters of a target BJT.

Abstract: A doped contact region having an opposite conductivity type as a bottom semiconductor layer is provided underneath a buried insulator layer in a bottom semiconductor layer. At least one conductive via structure extends from an interconnect-level metal line through a middle-of-line (MOL) dielectric layer, a shallow trench isolation structure in a top semiconductor layer, and a buried insulator layer and to the doped contact region. The doped contact region is biased at a voltage that is at or close to a peak voltage in the RF switch that removes minority charge carriers within the induced charge layer. The minority charge carriers are drained through the doped contact region and the at least one conductive via structure. Rapid discharge of mobile electrical charges in the induce charge layer reduces harmonic generation and signal distortion in the RF switch. A design structure for the semiconductor structure is also provided.

Abstract: A base region extends upward from a recessed semiconductor surface of a semiconductor material portion present on an insulator. The base region includes a vertical stack of, an extrinsic base region and an intrinsic base region. The extrinsic base region includes a first compound semiconductor material portion of a first conductivity type and a first dopant concentration. The intrinsic base region includes another first compound semiconductor material portion of the first conductivity type and a second dopant concentration which is less than the first dopant concentration. A collector region including a second compound semiconductor material portion of a second conductivity type opposite of the first conductivity type is located on one side on the base region. An emitter region including another second compound semiconductor material portion of the second conductivity type is located on another side on the base region.

Abstract: A base region extends upward from a recessed semiconductor surface of a semiconductor material portion present on an insulator. The base region includes a vertical stack of, an extrinsic base region and an intrinsic base region. The extrinsic base region includes a first compound semiconductor material portion of a first conductivity type and a first dopant concentration. The intrinsic base region includes another first compound semiconductor material portion of the first conductivity type and a second dopant concentration which is less than the first dopant concentration. A collector region including a second compound semiconductor material portion of a second conductivity type opposite of the first conductivity type is located on one side on the base region. An emitter region including another second compound semiconductor material portion of the second conductivity type is located on another side on the base region.

Abstract: A system and method for forming graphene layers on a substrate. The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.

Abstract: A bipolar junction transistor (BJT) and method for fabricating such. The transistor includes an emitter region, a collector region, and an intrinsic-base region. The intrinsic-base region is positioned between the emitter region and the collector region. Furthermore, the physical separation between the emitter region and the collector region is less than the sum of a base-emitter space-charge region width and a base-collector space-charge region width at the transistor's standby mode.

Abstract: A bipolar junction transistor (BJT) and method for fabricating such. The transistor includes an emitter region, a collector region, and an intrinsic-base region. The intrinsic-base region is positioned between the emitter region and the collector region. Furthermore, the physical separation between the emitter region and the collector region is less than the sum of a base-emitter space-charge region width and a base-collector space-charge region width at the transistor's standby mode.

Abstract: A method for forming a semiconductor device is provided. The method includes providing a wafer-stack having a main horizontal surface, an opposite surface, a buried dielectric layer, a semiconductor wafer extending from the buried dielectric layer to the main horizontal surface, and a handling wafer extending from the buried dielectric layer to the opposite surface; etching a deep vertical trench into the semiconductor wafer at least up to the buried dielectric layer, wherein the buried dielectric layer is used as an etch stop; forming a vertical transistor structure comprising forming a first doped region in the semiconductor wafer; forming a first metallization on the main horizontal surface in ohmic contact with the first doped region; removing the handling wafer to expose the buried dielectric layer; and masked etching of the buried dielectric layer to partly expose the semiconductor wafer on a back surface opposite to the main horizontal surface.

Abstract: Methods for creating chemical guide patterns by DSA lithography for fabricating an integrated circuit are provided. In one example, an integrated circuit includes forming a bifunctional brush layer of a polymeric material overlying an anti-reflective coating on a semiconductor substrate. The polymeric material has a neutral polymeric block portion and a pinning polymeric block portion that are coupled together. The bifunctional brush layer includes a neutral layer that is formed of the neutral polymeric block portion and a pinning layer that is formed of the pinning polymeric block portion. A portion of the neutral layer or the pinning layer is selectively removed to define a chemical guide pattern. A block copolymer layer is deposited overlying the chemical guide pattern. The block copolymer layer is phase separated to define a nanopattern that is registered to the chemical guide pattern.

Abstract: An example embodiment is a complementary transistor inverter circuit. The circuit includes a semiconductor-on-insulator (SOI) substrate, a lateral PNP bipolar transistor fabricated on the SOI substrate, and a lateral NPN bipolar transistor fabricated on the SOI substrate. The lateral PNP bipolar transistor includes a PNP base, a PNP emitter, and a PNP collector. The lateral NPN bipolar transistor includes a NPN base, a NPN emitter, and a NPN collector. The PNP base, the PNP emitter, the PNP collector, the NPN base, the NPN emitter, and the NPN collector abut the buried insulator of the SOI substrate.

Abstract: It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover the opened organic resin film.