Abstract: Naturally occurring RNA pseudoknots fold into many topologies, yet their formation is poorly understood. Herein, by using high-resolution single-molecule force spectroscopy, the folding pathways of the H-type pseudoknot found in the preQ1-riboswitch in B. subtilis were investigated By holding a single riboswitch RNA molecule in the optical-trap, the structural rearrangements as the end-to-end distance change along the pulling direction, x at a force, F were followed. The data reveal a multistate folding, wherein the intermediate hairpin undergoes a unidirectional conformational switching in the presence of ligand to form the pseudoknot receptor. Specifically-designed mutant RNAs resisted the switching mechanism and resulted in a significantly reduced pseudoknot population (4.5%) compared to the wild-type (100%). The free-energy landscape highlighted two kinetic barriers (?G±) that interrupt the folding pathway.

Abstract: This disclosure provides systems, methods, and apparatus related to thin free-standing oxide membranes. In one aspect, a method includes providing a substrate. The substrate defines a hole having a diameter of about 500 nanometers to 5000 nanometers. A layer of metal is deposited on the substrate. A supporting layer is deposited on the layer of metal. A first side of the supporting layer is the side that is disposed on the layer of metal. A metal oxide layer is deposited on the first side of the supporting layer and on the substrate. In some implementations, the method further includes removing the supporting layer.

Abstract: The present invention relates to a method of using nanopores to obtain sequence information of sample DNAs in ss test DNAs. The method comprises using speed bumps to stall the ss test DNAs in the nanopores at random positions of the ss test DNAs to obtain sequence information of each and every nucleotides of the sample DNAs, and to construct the whole sequences of the sample DNAs. The present invention also relates to identification and/or isolation of test DNAs having desired sequence(s) using nanopore detectors facilitated by speed bump.

Abstract: Nucleic acid molecule analysis systems are described. The system may include a nucleic acid molecule attached to a particle with a characteristic dimension. The system may also include an aperture defined by a first electrode, a first insulator, and a second electrode. The aperture may have a characteristic dimension less than the characteristic dimension of the particle. The system may further include a first power supply in electrical communication with the first electrode and the second electrode. In addition, the system may include a second power supply configured to apply an electric field through the aperture. In some embodiments, the aperture may be defined by a first insulator. A portion of the first electrode may extend into the aperture. A portion of the second electrode may extend into the aperture.

Abstract: The techniques relate to methods and apparatus for sensing an analyte. At least one sensor element is configured to sense an analyte, the at least one sensor element comprising a first portion and a second portion. A first current electrode is attached to the first portion and a second current electrode is attached to the second portion. A first measurement electrode is attached to the first portion and a second measurement electrode is attached to the second portion.

Abstract: A semiconductor package manufacturing method of the disclosure includes providing a multilayer adhesive film, forming a notch and a plurality of openings extending through the multilayer adhesive film, attaching the multilayer adhesive film to a back side of a wafer to form a stack, separating the stack into a plurality of individual stacks, separating each of the plurality of individual stacks into an upper stack and a lower stack, providing a substrate on which a first semiconductor chip is mounted, and stacking the upper stack on the first semiconductor chip. The upper stack includes a second semiconductor chip and a die attach pattern covering a portion of a back surface of the second semiconductor chip. A first side surface of the die attach pattern is aligned with a first side surface of the first semiconductor chip.

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a substrate, a transistor structure, an isolation layer, an interface layer in an opening of the isolation layer, and a metal crown structure over the interface layer. The interface layer and the metal crown structure are disposed on opposite side of the transistor from a gate structure.

Abstract: A method for fabrication includes providing a substrate having an upper surface with pattern of one or more recesses formed therein. A laser beam is directed to impinge on a donor film so as to eject droplets of a fluid from the donor film by laser-induced forward transfer (LIFT) into the one or more recesses. The fluid hardens within the one or more recesses to form a solid piece having a shape defined by the one or more recesses. The substrate is removed from the solid piece. In some embodiments, the recesses are coated with a thin-film layer before ejecting the droplets into the recesses, such that the thin-film layer remains as an outer surface of the solid piece after removing the substrate.

Abstract: Techniques for bonding structural features together in an enclosure of an electronic device are disclosed. A structural feature may be ultrasonically soldered to the enclosure to provide structural support and form a magnetic circuit within the device. Also, ultrasonic welding can bond various features to an interior region of the enclosure without leaving a mark or trace to an exterior region of the enclosure in a location corresponding to the various features. Further, one or more features can be actuated against the enclosure to bond the one or more features by friction welding. In addition, a rotational friction welding machine can rotate a feature having a relatively small diameter at relatively high speeds against the enclosure to drive the feature into the enclosure and frictionally weld the feature with the enclosure. Also, the friction welding does not leave any an appearance of cosmetic deformation on the exterior region.

Abstract: A particle sensing device, including a substrate and at least one particle sensing element, is provided. The substrate has a groove, and a through hole is disposed at a bottom of the groove. The through hole penetrates a bottom of the substrate. The particle sensing element is disposed in the substrate. The particle sensing element may include a first electrode pair and a second electrode pair. Two first sub-electrodes of the first electrode pair are disposed nearby two sides of the groove, respectively. And, a first distance is provided between the two first sub-electrodes. Two second sub-electrodes of the second electrode pair are disposed nearby two sides of the groove, respectively. And, a second distance is provided between the two second sub-electrodes. The first distance is smaller than the second distance.

Abstract: A chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A material defines an opening extending to the upper surface of the floating gate conductor, the material comprising a first dielectric underlying a second dielectric. A conductive element contacts the upper surface of the floating gate conductor and extending a distance along a sidewall of the opening.

Abstract: Techniques for bonding structural features together in an enclosure of an electronic device are disclosed. A structural feature may be ultrasonically soldered to the enclosure to provide structural support and form a magnetic circuit within the device. Also, ultrasonic welding can bond various features to an interior region of the enclosure without leaving a mark or trace to an exterior region of the enclosure in a location corresponding to the various features. Further, one or more features can be actuated against the enclosure to bond the one or more features by friction welding. In addition, a rotational friction welding machine can rotate a feature having a relatively small diameter at relatively high speeds against the enclosure to drive the feature into the enclosure and frictionally weld the feature with the enclosure. Also, the friction welding does not leave any an appearance of cosmetic deformation on the exterior region.

Abstract: A haptic actuator features magnets coupled to an enclosure and a movable mass with a conduction loop coupled to the enclosure via one or more movement elastic members. One or more conduction elastic members may be used to transmit signals to the conduction loop to cause the movable mass to move bilinearly relative to the enclosure and the magnets. The magnets may consist of a Halbach array to direct magnetic flux toward the conduction loop and away from other device components. Ferrofluid may be included between one or more of the magnets and the conduction loop to act as a damper in the system to improve haptic feedback. Closed loop control, such as back EMF, capacitive sensing, and magnetic sensing, may be included to improve system response.

Abstract: A semiconductor memory device according to an embodiment includes a semiconductor layer, a control gate electrode, and an organic molecular layer provided between the semiconductor layer and the control gate electrode, and the organic molecular layer having an organic molecule that includes a molecular structure described by a molecular formula (1):

Abstract: A method of manufacturing a sensor, the method including forming an array of chemically-sensitive field effect transistors (chemFETs), depositing a dielectric layer over the chemFETs in the array, depositing a protective layer over the dielectric layer, etching the dielectric layer and the protective layer to form cavities corresponding to sensing surfaces of the chemFETs, and removing the protective layer. The method further includes, etching the dielectric layer and the protective layer together to form cavities corresponding to sensing surfaces of the chemFETs. The protective layer is at least one of a polymer, photoresist material, noble metal, copper oxide, and zinc oxide. The protective protective layer is removed using at least one of sodium hydroxide, organic solvent, aqua regia, ammonium carbonate, hydrochloric acid, acetic acid, and phosphoric acid.

Abstract: A touch panel and a method for manufacturing the same, where the touch panel includes: a substrate; a first sensing electrode pattern disposed on the insulation substrate, including a plurality of first sensing electrodes, a first connection to connect the plurality of first sensing electrodes in a first direction, and a plurality of floating electrodes; and a second sensing electrode pattern including a plurality of second sensing electrodes insulated from the plurality of floating electrodes and overlapping the plurality of floating electrodes and a second connection to connect the plurality of second sensing electrodes in a second direction perpendicular to the first direction. The first sensing electrode pattern includes nanowire. The second sensing electrode pattern includes a transparent conductive material.

Abstract: One example includes a semiconductor device. The semiconductor device include a carbon nanotube substrate, a self-assembled monolayer, and a gate oxide. The self-assembled monolayer overlies the carbon nanotube substrate and is comprised of molecules each including a tail group, a carbon backbone, and a head group. The gate oxide overlies the self-assembled monolayer, wherein the self-assembled monolayer forms an interface between the carbon nanotube substrate and the gate oxide.

Abstract: The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET includes a microwells having a sensing layer, a top metal stack under the sensing layer, and a multi-layer interconnect (MLI) under the top metal stack. The top metal stack includes a top metal and a protective layer over and peripherally surrounding the top metal.

Abstract: Nanosensors including graphene and methods of manufacturing the same. A nanosensor includes a first insulating layer in which a first nanopore is formed; a graphene layer that is disposed on the first insulating layer and having a second nanopore or a nanogap formed therein adjacent to the first nanopore; and a marker element that is disposed adjacent to the graphene layer and identifies a position of the graphene layer.

Abstract: A micromechanical sensor apparatus having a movable gate includes a field effect transistor that has a movable gate, which is separated from a channel region by a cavity. The channel region is covered by a gate insulation layer.

Abstract: Disclosed are an apparatus for harvesting/storing piezoelectric energy, including: a substrate having a groove at a side thereon; a piezoelectric MEMS cantilever having an end fixed to the substrate and the other end floating above the groove, and configured to convert and store an external vibration into electric energy; and a mass formed at one end of the piezoelectric MEMS cantilever and configured to apply a vibration, and a manufacturing method thereof.

Abstract: Nanochannel sensors and methods for constructing nanochannel sensors. An example method includes forming a sacrificial line on an insulating layer, forming a dielectric layer, etching a pair of electrode trenches, forming a pair of electrodes, and removing the sacrificial line to form a nanochannel. The dielectric layer may be formed on insulating layer and around the sacrificial line. The pair of electrode trenches may be etched in the dielectric layer on opposite sides of the sacrificial line. The pair of electrodes may be formed by filling the electrode trenches with electrode material. The sacrificial line may be removed by forming a nanochannel between the at least one pair of electrodes.

Abstract: Disclosed herein are methods of preparing and using doped MWNT electrodes, sensors and field-effect transistors. Devices incorporating doped MWNT electrodes, sensors and field-effect transistors are also disclosed.

Abstract: A technique is provided for manufacturing a nanogap in a nanodevice. An oxide is disposed on a wafer. A nanowire is disposed on the oxide. A helium ion beam is applied to cut the nanowire into a first nanowire part and a second nanowire part which forms the nanogap in the nanodevice. Applying the helium ion beam to cut the nanogap forms a signature of nanowire material in proximity to at least one opening of the nano gap.

Abstract: Disclosed is a metal oxide semiconductor gas sensor having a nanostructure, the metal oxide semiconductor gas sensor including: a substrate; a first electrode formed on the substrate; a gas sensing layer provided on the first electrode, made of a metal oxide semiconductor which has a nanostructure and of which electrical conductivity changes when the metal oxide semiconductor reacts with gas to be sensed, and formed by oblique angle deposition; a second electrode formed on the metal oxide semiconductor; and a control unit for measuring the electrical conductivity of the gas sensing layer to sense the gas by applying a predetermined amount of current through the first and the second electrodes.

Abstract: The present invention relates to a method for decreasing the impedance of a titanium nitride element for use in an electrode component. The method comprises obtaining a titanium nitride element and hydrothermally treating the titanium nitride element by immersing the titanium nitride element in a liquid comprising water while heating said liquid.

Abstract: A Sensor for sensing the presence of at least one fluidum in a space adjoining the sensor is disclosed. In one aspect, the sensor has a two-dimensional electron gas (2DEG) layer stack, a gate electrode overlaying at least part of the 2DEG layer stack for electrostatically controlling electron density of a 2DEG in the 2DEG layer stack and a source and a drain electrode contacting the 2DEG layer stack for electrically contacting the 2DEG, wherein a detection opening is provided in between the gate electrode and the 2DEG layer stack and wherein the detection opening communicates with the space through a detection opening inlet such that molecules of the fluidum can move from the adjoining space through the detection opening inlet into the detection opening where they can measurably alter a electric characteristic of the 2DEG.

Abstract: A BioMEMS microelectromechanical apparatus and for fabricating the same is disclosed. A substrate is provided with at least one signal conduit formed on the substrate. A sacrificial layer of sacrificial material may be deposited on the signal conduit and optionally patterned to remove sacrificial material from outside the packaging covered area. A bonding layer may be deposited on at least a portion of the signal conduit and on the sacrificial layer when included. The bonding layer may be planarized and patterned to form one or more cap bonding pads and define a packaging covered area. A cap may be bonded on the cap bonding pad to define a capped area and so that the signal conduit extends from outside the capped area to inside the capped area. Additionally, a test material such as a fluid may be provided within the capped area.

Abstract: One or more semiconductor devices and array arrangements and methods of formation are provided. A semiconductor device includes an ion sensing device and a heating element proximate the ion sensing device. The ion sensing device has an active region, including a source, a drain, and a channel, the channel situated between the source and the drain. The ion sensing device also has an ion sensing film situated over the channel, and an ion sensing region over the ion sensing film. Responsive to a temperature sensed by a thermal sensor proximate the ion sensing device, the heating element is selectively activated to alter a temperature of the ion sensing region to promote desired operation of the semiconductor device, such as to function as a bio sensor. Multiple semiconductor devices can be formed into an array.

Abstract: The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET includes a microwells having a sensing layer, a top metal stack under the sensing layer, and a multi-layer interconnect (MLI) under the top metal stack. The top metal stack includes a top metal and a protective layer over and peripherally surrounding the top metal.

Abstract: An organic electrochemical transistor (OECT) that may be used as a biosensor is built up by layers applied to a monofilament. A first conducting layer applied to the monofilament includes generally cylindrical source and drain contacts with a gap therebetween. An electro-active layer of an organic material altering its electrical conductivity through a change in redox state is in electrical contact with the source and drain contacts, and has a transistor channel interface for contacting an electrolyte. A gate electrode is spaced apart from the first monofilament, and may comprise a cylindrical layer built up on another length of monofilament.

Abstract: A semiconductor sensor device includes a substrate, a non-suitable seed layer located above the substrate, at least one electrode located above the non-suitable seed layer, and a porous sensing layer supported directly by the non-suitable seed layer and in electrical communication with the at least one electrode, the porous sensing layer defining a plurality of grain boundaries formed by spaced-apart nucleation on the non-suitable seed layer using atomic layer deposition.

Abstract: Methods for fabricating silicon nanowire chemical sensing devices, devices thus obtained, and methods for utilizing devices for sensing and measuring chemical concentration of selected species in a fluid are described. Devices may comprise a metal-oxide-semiconductor field-effect transistor (MOSFET) structure.

Abstract: A sensor element is described that includes at least one semiconductor component having a gas-sensitive layer which is attached to a substrate by the flip-chip method, the gas-sensitive layer facing the substrate and a supply arrangement being provided to supply a gas to be examined to the gas-sensitive layer. The semiconductor component is enclosed in a casing. Also described is a method for manufacturing the sensor element, in which a semiconductor component having a gas-sensitive layer is attached by the flip-chip method to a substrate in such a way that the gas-sensitive layer faces the substrate. After that, the casing is applied by a plasma sputtering method, in particular an atmospheric plasma sputtering method. Finally, a use of the sensor element in the exhaust system of an internal combustion engine is also described.

Abstract: Described is a personal device and methods for measuring the concentration of an analyte in a sample of gas. The device and method may utilize a chemically selective sensor element with low power consumption integrated with circuitry that enables wireless communication between the sensor and any suitable electronic readout such as a smartphone, tablet, or computer. In preferred form, the sensor circuitry relies upon the quantum capacitance effect of graphene as a transduction mechanism. Also in preferred form, the device and method employ the functionalization of the graphene-based sensor to determine the concentration of ethanol in exhaled breath.

Abstract: A patch panel is provided including a patch panel frame, an indicator module connected to the patch panel frame, a microcontroller unit (MCU), a connector connected to the patch panel frame and a detection device for detecting a connection state at the connector. A circuit board interface is provided with a communication path between the indicator module and the MCU and between the detection device and the MCU. A communication unit is connected to the circuit board interface. The communication unit conveys signals between any one of patch panels of a group, between groups of patch panels, between the patch panel and a control unit and between the group of patch panels and the control unit.

Abstract: A method for fabricating three dimensional high surface electrodes is described. The methods including the steps: designing the pillars; selecting a material for the formation of the pillars; patterning the material; transferring the pattern to form the pillars; insulating the pillars and providing a metal layer for increased conductivity. Alternative methods for fabrication of the electrodes and fabrication of the electrodes using CMOS are also described.

Abstract: Structures, apparatuses, and methods are provided for fabricating a semiconductor device structure. An example semiconductor device structure includes a first substrate, a first device layer, a second device layer and a third device layer. The first device layer may be on the first substrate and include a switch. The second device layer may be on the first device layer and include a sensing device. The third device layer may include one or more inter-level connection structures configured to electrically connect the switch to the sensing device. The switch may be configured to be electrically turned on in response to a selection signal. The sensing device may be configured to generate an output signal in response to the switch being turned on.

Abstract: An apparatus comprises: a sensing element formed on a buried oxide layer of a substrate and providing communication between a source region and a drain region; a gate dielectric layer on the sensing element, the gate dielectric layer defining a sensing surface on the sensing element; a passive surface surrounding the sensing surface; and a compound bound to the sensing surface and not bound to the passive surface, the compound having a ligand specifically configured to preferentially bind a target molecule to be sensed. An electrolyte solution in contact with the sensing surface and the passive surface forms a top gate of the apparatus.

Abstract: Integrated circuits for a single-molecule nucleic-acid assay platform, and methods for making such circuits are disclosed. In one example, a method includes transferring one or more carbon nanotubes to a complementary metal-oxide semiconductor (CMOS) substrate, and forming a pair of post-processed electrodes on the substrate proximate opposing ends of the one or more carbon nanotubes.

Abstract: An apparatus comprises: a sensing element formed on a buried oxide layer of a substrate and providing communication between a source region and a drain region; a gate dielectric layer on the sensing element, the gate dielectric layer defining a sensing surface on the sensing element; a passive surface surrounding the sensing surface; and a compound bound to the sensing surface and not bound to the passive surface, the compound having a ligand specifically configured to preferentially bind a target molecule to be sensed. An electrolyte solution in contact with the sensing surface and the passive surface forms a top gate of the apparatus.

Abstract: Disclosed is an integrated circuit (100) comprising a semiconductor substrate (110) carrying a plurality of circuit elements (111); and a carbon dioxide sensor (120) over said semiconductor substrate, said sensor comprising a pair of electrodes (122, 124) laterally separated from each other; and a carbon dioxide (CO2) permeable polymer matrix (128) at least partially covering the pair of electrodes, said matrix encapsulating a liquid (126) comprising an organic alcohol and an organic amidine or guanidine base. A composition for forming such a CO2 sensor on the IC and a method of manufacturing such an IC are also disclosed.

Abstract: The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET includes a microwells having a sensing layer, a top metal stack under the sensing layer, and a multi-layer interconnect (MLI) under the top metal stack. The top metal stack includes a top metal and a protective layer over and peripherally surrounding the top metal.

Abstract: A device for sensing a property of a fluid comprising a first substrate having formed thereon a sensor configured in use to come into contact with a fluid in order to sense a property of the fluid, and a wireless transmitter for transmitting data over a wireless data link and a second substrate having formed thereon a wireless receiver for receiving data transmitted over said wireless link by said wireless transmitter. The first substrate is fixed to or within said second substrate. Additionally or alternatively, the device comprises a first substrate defining one or more microfluidic structures for receiving a fluid to be sensed and a second substrate comprising or having attached thereto a multiplicity of fluid sensors, the number of sensors being greater than the number of microfluidic structures.

Abstract: The present disclosure relates to a micro-fluidic probe card that deposits a fluidic chemical onto a substrate with a minimal amount of fluidic chemical waste, and an associated method of operation. In some embodiments, the micro-fluidic probe card has a probe card body with a first side and a second side. A sealant element, which contacts a substrate, is connected to the second side of the probe card body in a manner that forms a cavity within an interior of the sealant element. A fluid inlet, which provides a fluid from a processing tool to the cavity, is a first conduit extending between the first side and the second side of the probe card body. A fluid outlet, which removes the fluid from the cavity, is a second conduit extending between the first side and the second side of the probe card body.

Abstract: Embodiments include a method for securing a membrane material to a gate of a molecular receptor-based chemical field-effect transistor (CHEMFET). The method can include casting a membrane material onto an exposed region of the gate, curing the membrane material, placing the CHEMFET into a mold, inserting a single application of impervious electrically insulative resin into the mold, and securing edges of the membrane material by the single application of the impervious electrically insulative resin, thereby physically preventing lifting off of the membrane material from the gate. Embodiments include a sensor module. The sensor module can include a CHEMFET, an amplifier circuit, one or more sensor pins for contacting field ground soil, a data logger, and a wireless transceiver, among other components.

Abstract: A method for forming a sensor includes forming a base-region barrier in contact with a base substrate. The base-region barrier includes a monocrystalline semiconductor having a same dopant conductivity as the base substrate. An emitter and a collector are formed in contact with and on opposite sides of the base-region barrier to form a bipolar junction transistor. The collector, the emitter and the base-region barrier are planarized to form a level surface opposite the base substrate such that when the level surface is exposed to charge, the charge is measured during operation of the bipolar junction transistor.

Abstract: Some embodiments relate to method of fabricating a sensor. The method includes providing a substrate wafer that includes a suspended beam; adding an adhesive layer to the substrate wafer such that the adhesive layer covers portions of the substrate without covering the suspended beam; positioning a cover wafer onto the adhesive layer such that the suspend beam is exposed to ambient air through openings in the cover wafer; and functionalizing the suspended beam by contacting the suspended beam with materials through the opening in the cover wafer.

Abstract: Provided are a nanopore device with resolution improved by graphene nanopores, and a method of manufacturing the same. The nanopore device includes: a first insulating layer; a graphene layer disposed on the first insulating layer and having a nanopore formed at a center portion of the graphene layer; and first and second electrode layers disposed respectively at both sides of the nanopore on a top surface of the graphene layer, wherein a center region of the first insulating layer is removed such that the center portion of the graphene layer is exposed to the outside.

Abstract: A device includes at least one nanoscale capillary and means for applying an electric voltage, said means being adapted to create an electric field at least in said capillary when said electric voltage is applied, so that, when said electric voltage is applied, a charged molecule or particle placed within the created electric field can be electrically controlled. A fluidic network structure includes the at least one nanoscale capillary. A method of using and manufacturing the fluidic network structure is also described.