Abstract: Proton irradiation is performed a plurality of times from rear surface of an n-type semiconductor substrate, which is an n? drift layer, forming an n-type FS layer having lower resistance than the n-type semiconductor substrate in the rear surface of the n? drift layer. When the proton irradiation is performed a plurality of times, the next proton irradiation is performed to as to compensate for a reduction in mobility due to disorder which remains after the previous proton irradiation. In this case, the second or subsequent proton irradiation is performed at the position of the disorder which is formed by the previous proton irradiation. In this way, even after proton irradiation and a heat treatment, the disorder is reduced and it is possible to prevent deterioration of characteristics, such as increase in leakage current. It is possible to form an n-type FS layer including a high-concentration hydrogen-related donor layer.

Abstract: Hydrogen atoms and crystal defects are introduced into an n? semiconductor substrate by proton implantation. The crystal defects are generated in the n? semiconductor substrate by electron beam irradiation before or after the proton implantation. Then, a heat treatment for generating donors is performed. The amount of crystal defects is appropriately controlled during the heat treatment for generating donors to increase a donor generation rate. In addition, when the heat treatment for generating donors ends, the crystal defects formed by the electron beam irradiation and the proton implantation are recovered and controlled to an appropriate amount of crystal defects. Therefore, for example, it is possible to improve a breakdown voltage and reduce a leakage current.

Abstract: A method of forming an ultra-shallow junction in a semiconductor substrate. The method includes forming an amorphous region in a semiconductor substrate by performing a pre-amorphization implant step and implanting one or more dopants in the amorphous region by performing a monolayer doping step. The semiconductor substrate is then thermally treated to activate the implanted dopant in the amorphous region to thereby form an ultra-shallow junction in the semiconductor substrate. The thermal treatment can be performed without any oxide cap overlying the implanted amorphous region.

Abstract: A method of ion implantation comprising: providing a plasma within a plasma region of a chamber; positively biasing a first grid plate, wherein the first grid plate comprises a plurality of apertures; negatively biasing a second grid plate, wherein the second grid plate comprises a plurality of apertures; flowing ions from the plasma in the plasma region through the apertures in the positively-biased first grid plate; flowing at least a portion of the ions that flowed through the apertures in the positively-biased first grid plate through the apertures in the negatively-biased second grid plate; and implanting a substrate with at least a portion of the ions that flowed through the apertures in the negatively-biased second grid plate.

Abstract: A plasma processing apparatus includes a process chamber, a platen for supporting a workpiece, a source configured to generate a plasma in the process chamber, and an insulating modifier. The insulating modifier has a gap, and a gap plane, where the gap plane is defined by portions of the insulating modifier closest to the sheath and proximate the gap. A gap angle is defined as the angle between the gap plane and a plane defined by the front surface of the workpiece. Additionally, a method of having ions strike a workpiece is disclosed, where the range of incident angles of the ions striking the workpiece includes a center angle and an angular distribution, and where the use of the insulating modifier creates a center angle that is not perpendicular to the workpiece.

Abstract: Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched materials.

Abstract: The present invention provides a method of reducing a surface doping concentration of a doped diffusion region. First, a semiconductor substrate is provided. The semiconductor substrate has the doped diffusion region disposed therein, and the doped diffusion region is in contact with a surface of the semiconductor substrate. A doping concentration of the doped diffusion region close to the surface is larger than a doping concentration of the doped diffusion region away from the surface. Then, a thermal oxidation process is performed to form an oxide layer on the surface of the semiconductor substrate. A part of the doped diffusion region in contact with the surface reacts with oxygen to form a part of the oxide layer. Then, the oxide layer is removed.

Abstract: Some embodiments discussed relate to an integrated circuit and methods for making it. In an example, a method can include providing a semiconductor wafer including a fin, and introducing a noise-reducing dopant into a sidewall of the fin.

Abstract: A method of fabricating a back-illuminated image sensor that includes the steps of providing a first substrate of a semiconductor layer, in particular a silicon layer, forming electronic device structures over the semiconductor layer and, only then, doping the semiconductor layer. By doing so, improved dopant profiles and electrical properties of photodiodes can be achieved such that the final product, namely an image sensor, has a better quality.

Abstract: Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched materials.

Abstract: A method of using helium to create ultra shallow junctions is disclosed. A pre-implantation amorphization using helium has significant advantages. For example, it has been shown that dopants will penetrate the substrate only to the amorphous-crystalline interface, and no further. Therefore, by properly determining the implant energy of helium, it is possible to exactly determine the junction depth. Increased doses of dopant simply reduce the substrate resistance with no effect on junction depth. Furthermore, the lateral straggle of helium is related to the implant energy and the dose rate of the helium PAI, therefore lateral diffusion can also be determined based on the implant energy and dose rate of the helium PAI. Thus, dopant may be precisely implanted beneath a sidewall spacer, or other obstruction.

Abstract: A thin semiconductor wafer, on which a top surface structure and a bottom surface structure that form a semiconductor chip are formed, is affixed to a supporting substrate by a double-sided adhesive tape. Then, on the thin semiconductor wafer, a trench to become a scribing line is formed by wet anisotropic etching with a crystal face exposed so as to form a side wall of the trench. On the side wall of the trench with the crystal face thus exposed, an isolation layer for holding a reverse breakdown voltage is formed by ion implantation and low temperature annealing or laser annealing so as to be extended to the top surface side while being in contact with a p collector region as a bottom surface diffused layer. Then, laser dicing is carried out to neatly dice a collector electrode, formed on the p collector region, together with the p collector region, without presenting any excessive portions and any insufficient portions under the isolation layer.

Abstract: A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber having a plasma sheath adjacent to the front surface of the workpiece, and an insulating modifier. The insulating modifier has a gap, and a gap plane, where the gap plane is defined by portions of the insulating modifier closest to the sheath and proximate the gap. A gap angle is defined as the angle between the gap plane and a plane defined by the front surface of the workpiece. Additionally, a method of having ions strike a workpiece is disclosed, where the range of incident angles of the ions striking the workpiece includes a center angle and an angular distribution, and where the use of the insulating modifier creates a center angle that is not perpendicular to the workpiece.

Abstract: A poly-silicon film formation method for forming a poly-silicon film doped with phosphorous or boron includes heating a target substrate placed in a vacuum atmosphere inside a reaction container, and supplying into the reaction container a silicon film formation gas, a doping gas for doping a film with phosphorous or boron, and a grain size adjusting gas containing a component to retard columnar crystal formation from a poly-silicon crystal and to promote miniaturization of the poly-silicon crystal, thereby depositing a silicon film doped with phosphorous or boron on the target substrate.

Abstract: A thin semiconductor wafer, on which a top surface structure and a bottom surface structure that form a semiconductor chip are formed, is affixed to a supporting substrate by a double-sided adhesive tape. Then, on the thin semiconductor wafer, a trench to become a scribing line is formed by wet anisotropic etching with a crystal face exposed so as to form a side wall of the trench. On the side wall of the trench with the crystal face thus exposed, an isolation layer for holding a reverse breakdown voltage is formed by ion implantation and low temperature annealing or laser annealing so as to be extended to the top surface side while being in contact with a p collector region as a bottom surface diffused layer. Then, laser dicing is carried out to neatly dice a collector electrode, formed on the p collector region, together with the p collector region, without presenting any excessive portions and any insufficient portions under the isolation layer.

Abstract: Vacancies and dopant ions are introduced near the surface of a semiconductor layer structure. Implanted dopant ions which diffuse by an interstitialcy mechanism have diffusivity greatly reduced, which leads to a very low resistivity doped region and a very shallow junction.

Abstract: A method for infusing material below the surface of a substrate is described. The method comprises modifying a surface condition of a surface on a substrate to produce a modified surface layer, and thereafter, infusing material into the modified surface in the substrate by exposing the substrate to a gas cluster ion beam (GCIB) comprising the material.

Abstract: The present invention provides an improved amorphization/templated recrystallization (ATR) method for forming hybrid orientation substrates and semiconductor device structures. A direct-silicon-bonded (DSB) silicon layer having a (011) surface crystal orientation is bonded to a base silicon substrate having a (001) surface crystal orientation to form a DSB wafer in which the in-plane <110> direction of the (011) DSB layer is aligned with an in-plane <110> direction of the (001) base substrate. Selected regions of the DSB layer are amorphized down to the base substrate to form amorphized regions aligned with the mutually orthogonal in-plane <100> directions of the (001) base substrate, followed by recrystallization using the base substrate as a template.

Abstract: A method for controlling dislocation position in a silicon germanium buffer layer located on a substrate includes irradiating one or more regions of the silicon germanium layer with a dislocation inducing agent and depositing a strained silicon germanium layer on the substrate. The dislocation inducing agent may include ions, electrons, or other radiation source. Dislocations in the silicon germanium layer are located in one or more of the regions. The substrate and strained silicon germanium layer may then be subjected to an annealing process to transform the strained silicon germanium layer into a relaxed state. A top layer of strained silicon or silicon germanium may be deposited on the relaxed silicon germanium layer. Semiconductor-based devices may then be fabricated in the non-damaged regions of the strained silicon or silicon germanium layer. Threading dislocations are confined to damaged areas which may be transformed into SiO2 isolation regions.

Abstract: A method to provide a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that surface peak dopant profiles and retrograde dopant profiles are realized. The method may include an amorphization step in one embodiment.

Abstract: A method for achieving uniaxial strain on originally biaxial-strained thin films after uniaxial strain relaxation induced by ion implantation is provided. The biaxial-strained thin film receives ion implantation after being covered by a patterned implant block structure. The strain in the uncovered region is relaxed by ion implantation, which induces the lateral strain relaxation in the covered region. When the implant block structure is narrow (dimension is comparable to the film thickness), the original biaxial strain will relax uniaxially in the lateral direction.

Abstract: The present invention relates to a method of treating a structure produced from semiconductor materials, wherein the structure includes a first and second substrates defining a common interface that has defects. The method includes forming a layer, called the disorganized layer, which includes the interface, in which at least a part of the crystal lattice is disorganized; and reorganizing the crystal lattice of the disorganized layer in order to force the defects back deeper into the first substrate.

Abstract: A semiconductor fabrication process preferably used with a semiconductor on insulator (SOI) wafer. The wafer's active layer is biaxially strained and has first and second regions. The second region is amorphized to alter its strain component(s). The wafer is annealed to re-crystallize the amorphous semiconductor. First and second types of transistors are fabricated in the first region and the second region respectively. Third and possibly fourth regions of the active layer may be processed to alter their strain characteristics. A sacrificial strain structure may be formed overlying the third region. The strain structure may be a compressive. When annealing the wafer with the strain structure in place, its strain characteristics may be mirrored in the third active layer region. The fourth active layer region may be amorphized in stripes that run parallel to a width direction of the transistor strain to produce uniaxial stress in the width direction.

Abstract: An integrated circuit comprises a doped semiconductor portion including an amorphous portion and a contact structure comprising a conductive material. The contact structure is in contact with the amorphous portion. According to another embodiment, an integrated circuit comprises a doped semiconductor portion including a region having a non-stoichiometric composition and a contact structure comprising a conductive material. The contact structure is in contact with the region having a non-stoichiometric composition.

Abstract: The disclosure relates to a method of forming an n-type doped active area on a semiconductor substrate that presents an improved placement profile. The method comprises the placement of arsenic in the presence of a carbon-containing arsenic diffusion suppressant in order to reduce the diffusion of the arsenic out of the target area during heat-induced annealing. The method may additionally include the placement of an amorphizer, such as germanium, in the target area in order to reduce channeling of the arsenic ions through the crystalline lattice. The method may also include the use of arsenic in addition to another n-type dopant, e.g. phosphorus, in order to offset some of the disadvantages of a pure arsenic dopant. The disclosure also relates to a semiconductor component, e.g. an NMOS transistor, formed in accordance with the described methods.

Abstract: A method is disclosed for doping a target area of a semiconductor substrate, such as a source or drain region of a transistor, with an electronically active dopant (such as an N-type dopant used to create active areas in NMOS devices, or a P-type dopant used to create active areas in PMOS devices) having a well-controlled placement profile and strong activation. The method comprises placing a carbon-containing diffusion suppressant in the target area at approximately 50% of the concentration of the dopant, and activating the dopant by an approximately 1,040 degree Celsius thermal anneal. In many cases, a thermal anneal at such a high temperature induces excessive diffusion of the dopant out of the target area, but this relative concentration of carbon produces a heretofore unexpected reduction in dopant diffusion during such a high-temperature thermal anneal.

Abstract: A method for fabricating a hybrid orientation substrate includes steps of providing a direct silicon bonding (DSB) wafer having a first substrate with (100) crystalline orientation and a second substrate with (110) crystalline orientation directly bonded on the first substrate, forming and patterning a first blocking layer on the second substrate to define a first region not covered by the first blocking layer and a second region covered by the first blocking layer, performing an amorphization process to transform the first region of the second substrate into an amorphized region, and performing an annealing process to recrystallize the amorphized region into the orientation of the first substrate and to make the second region stressed by the first blocking layer.

Abstract: A method for introducing impurities includes a step for forming an amorphous layer at a surface of a semiconductor substrate, and a step for forming a shallow impurity-introducing layer at the semiconductor substrate which has been made amorphous, and an apparatus used therefore. Particularly, the step for forming the amorphous layer is a step for irradiating plasma to the surface of the semiconductor substrate, and the step for forming the shallow impurity-introducing layer is a step for introducing impurities into the surface which has been made amorphous.

Abstract: An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.

Abstract: An structure for electrically isolating a semiconductor device is formed by implanting dopant into a semiconductor substrate that does not include an epitaxial layer. Following the implant the structure is exposed to a very limited thermal budget so that dopant does not diffuse significantly. As a result, the dimensions of the isolation structure are limited and defined, thereby allowing a higher packing density than obtainable using conventional processes which include the growth of an epitaxial layer and diffusion of the dopants. In one group of embodiments, the isolation structure includes a deep layer and a sidewall which together form a cup-shaped structure surrounding an enclosed region in which the isolated semiconductor device may be formed. The sidewalls may be formed by a series of pulsed implants at different energies, thereby creating a stack of overlapping implanted regions.

Abstract: A method of manufacturing a microelectronic device including forming an opening in a dielectric layer located over a substrate, forming a semi-conductive layer substantially conforming to the opening, and forming a conductive layer substantially conforming to the semi-conductive layer. At least a portion of the semi-conductive layer is doped by implanting through the conductive layer. The semi-conductive layer and the conductive layer may then be annealed.

Abstract: Methods of providing a semiconductor device with a control electrode structure having a controlled overlap between control electrode and first and second main electrode extensions without many spacers are disclosed. A preferred method provides a step of etching back an insulating layer performed after amorphizing and implanting the main electrode extensions. Preferably, the step that amorphizes the extensions also partly amorphizes the insulating layer. Because etch rates of amorphous insulator and crystalline insulator differ, the amorphized portion of the insulating layer may serve as a natural etch stop to enable even better fine-tuning of the overlap. Corresponding semiconductor devices are also provided.

Abstract: An insulating film made of zirconia or hafnia is formed on the surface of a semiconductor substrate. A partial surface area of the insulating film is covered with a mask pattern. By using the mask pattern as a mask, ions are implanted into a region of the insulating film not covered with the mask pattern to give damages to the insulating film. By using the mask pattern as a mask, a portion of the insulating film is etched.

Abstract: A method of disordering a quantum well heterostructure, including the step of irradiating the heterostructure with a particle beam, wherein the energy of the beam is such that the beam creates a substantially constant distribution of defects within the heterostructure. The irradiating particles can be ions or electrons, and the energy is preferably such that the irradiating particles pass through the heterostructure. Light ions such as hydrogen ions are preferred because they are readily available and produce substantially uniform distributions of point defects at relatively low energies. The method can be used to tune the wavelength range of an optoelectronic device including such a heterostructure, such as a photodetector.

Abstract: An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.

Abstract: A method for manufacturing a semiconductor device is disclosed, in which characteristics of the semiconductor device and an operation speed are improved. In forming sidewall spacers at both sides of a gate electrode, a semiconductor substrates is partially removed at both sides of the sidewall spacer by controlling an etch gas, and then a process for forming a silicide layer is performed, thereby increasing a distance between the silicide layer and a channel. Accordingly, it is possible to decrease a resistance material between the silicide layer and the channel region.

Abstract: A manufacturing process for fabricating field effect transistors is disclosed comprising the generation of a strained surface layer on the surface of the substrate on which the transistor is to be fabricated. The strained surface layer is generated by implanting xenon and/or other heavy inert ions into the substrate. Implantation can be performed both after or prior to the gate oxide growth. The processing afterwards is carried out as in conventional MOS technologies. It is assumed that the strained surface layer improves the channel mobility of the transistor.

Abstract: A method of disordering a quantum well heterostructure, including the step of irradiating the heterostructure with a particle beam, wherein the energy of the beam is such that the beam creates a substantially constant distribution of defects within the heterostructure. The irradiating particles can be ions or electrons, and the energy is preferably such that the irradiating particles pass through the heterostructure. Light ions such as hydrogen ions are preferred because they are readily available and produce substantially uniform distributions of point defects at relatively low energies. The method can be used to tune the wavelength range of an optoelectronic device including such a heterostructure, such as a photodetector.

Abstract: There is provided a process for manufacturing a silicon epitaxial wafer capable of manufacturing an epitaxial wafer, which exerts a stable IG capability without being affected by a thermal history of a substrate for epitaxial growth and has the IG capability excellent from an early stage of a device process, and particularly, canceling an IG shortage in an N/N+ epitaxial wafer caused by a problem that oxygen precipitation is hard to proceed in an N+ substrate with a simple and easy way. RTA (rapid heating and rapid cooling heat treatment) is performed at a temperature of 1200° C. to 1350° C. for 1 to 120 seconds on a silicon substrate for epitaxial growth; further heat treatment is performed at a temperature of 900° C. to 1050° C. for 2 to 20 hours on the silicon substrate for epitaxial growth; and thereafter, an epitaxial layer is formed on a surface of the silicon substrate.

Abstract: An advanced contact integration technique for deep-sub-150 nm semiconductor devices such as W/WN gate electrodes, dual work function gates, dual gate MOSFETs and SOI devices. This technique integrates self-aligned raised source/drain contact processes with a process employing a W-Salicide combined with ion mixing implantation. The contact integration technique realizes junctions having low contact resistance (RC), with ultra-shallow contact junction depth (XJC) and high doping concentration in the silicide contact interface (Nc).

Abstract: The present invention relates generally to a method for forming a pattern and a semiconductor device, and in particular, to a method for forming a pattern for the formation of quantum dots or wires with (1)˜(50) nm dimension using the atomic array of a crystalline material and to the manufacture of functional devices that have such a structure.

Abstract: Strip-shaped ditches are formed on a sapphire substrate as a base material. Then, the sapphire substrate is set into a CVD chamber, and an AlxGayInzN (x+y+z=1,x>0,y,z≧0)film is epitaxially grown on the sapphire substrate so as to embed the ditches by a selective lateral epitaxial growth method. As a result, the AlxGayInzN film has low dislocation density areas on at least one of the concave portions and the convex portions of the strip-shaped ditches.

Abstract: A method for crystallizing an amorphous silicon film which includes the steps of: preparing a substrate having the amorphous silicon film, the amorphous silicon film being formed on an intermediate layer in which an inner space exists; applying an energy to the amorphous silicon film in order to crystallize the amorphous silicon film, wherein the step of preparing the substrate includes the steps of: forming a material layer for forming the space on an insulating substrate, forming the intermediate layer to cover the material layer, forming the amorphous silicon film on the intermediate layer, selectively removing the amorphous silicon film and the intermediate layer to expose a part of the material layer for forming space, and removing the material layer for forming space; or forming a material layer for forming the space on an insulating substrate, forming the intermediate layer to cover the material layer, selectively removing the intermediate layer to expose a part of the material layer, removing the mate

Abstract: Useful to inhibit reverse engineering, semiconductor devices and methods therefore include formation of two active regions over a substrate region in the semiconductor device. According to an example embodiment, a dopable link, or region, between two heavily doped regions can be doped to achieve a first polarity type, with the two heavily doped regions of the opposite polarity. If dictated by design requirements, the dopable region is adapted to conductively link the two heavily doped regions. A dielectric is formed over the dopable region and extends over a portion of each of the two heavily doped regions to inhibit silicide formation over edges of the dopable region. In connection with a salicide process, a silicide is then formed adjacent the dielectric and formed over another portion of the two heavily doped regions.

Abstract: We have discovered that, contrary to conventional wisdom about forming DP defects, electrical saturation in highly doped 2D layers of Si does not occur. In accordance with one aspect of our invention, free-carrier concentrations in excess of about 7×1020 cm−3 can be attained in single crystal Si layers &dgr;-doped with a Group V element. In one embodiment, free-carrier concentrations in excess of about 2×1021 cm−3 are realized in single crystal Si that is &dgr;-doped with Sb. In another embodiment, the &dgr;-doped layer is formed as an integral part of an FET.

Abstract: A method for forming a double-gate SOI MOS transistor with a back gate formed by a laser thermal process is described. In this method, a back gate is formed in a semiconductor substrate and is subsequently amorphized by implanting an amorphization species such as germanium, silicon, and xenon. The amorphous back gate region is melted using a laser annealing process and subsequently recrystallized to form the back gate.

Abstract: A method for fabricating a locally reinforced metallic microfeature on a substrate provided preferably with an electrical contacting or a driving circuit, and on an organic, patterned sacrificial layer, which is removed after the metallic microfeature is applied, is described. In fabricating the local reinforcement of the microfeature, at least one further organic layer, formed as a mask, is deposited, which is likewise removed following pattern delineation of the metallic layer.

Abstract: A BiCMOS semiconductor device and a method of forming same are disclosed. A bipolar transistor region is formed adjacent a CMOS device region within a semiconductor substrate. Carbon is implanted in an amount ranging from about 1013 to about 1014 cm−2 before forming the base, emitter and collector within the bipolar transistor region to aid in suppressing transient enhanced diffusion. The bipolar transistor region is subject to rapid thermal annealing to aid in suppressing the transient enhanced diffusion.

Abstract: A process is described which allows a buried, retrograde doping profile or a delta doping to be produced in a relatively simple and inexpensive way. The process uses individual process steps that are already used in the mass production of integrated circuits and accordingly can be configured for a high throughput.

Abstract: Drain and source extensions that are abrupt and shallow and that have high concentration of dopant are fabricated for a field effect transistor, using a laser thermal process. A drain amorphous region is formed by implanting a neutral species into a drain region of the field effect transistor at an angle directed toward a gate of the field effect transistor such that the drain amorphous region is a trapezoidal shape that extends to be sufficiently under the gate of the field effect transistor. A source amorphous region is formed by implanting the neutral species into a source region of the field effect transistor at an angle directed toward the gate of the field effect transistor such that the source amorphous region is a trapezoidal shape that extends to be sufficiently under the gate of the field effect transistor. A drain and source dopant is implanted into the drain and source amorphous regions at an angle directed toward the gate of the field effect transistor.