Abstract: The present invention relates to a conductive polishing pad and a method for making the same. The conductive polishing pad includes a bottom layer, a conductive film and a polishing layer. The bottom layer includes a first high polymer and a fiber base. The first high polymer covers the fiber base, and has a plurality of first holes. The conductive film is disposed on the bottom layer. The polishing layer is disposed on the conductive film, and includes a second high polymer. The second high polymer has a plurality of second holes. Even though the bottom layer and the polishing layer are poor conductors, the conductivity thereof is raised by the conductive film, so that the polishing pad has good conductivity. Further, the polishing pad has a flexible surface, which prevents a surface of a workpiece to be polished from being scratched during polishing.

Abstract: An apparatus for cleaning cylindrical female electrical terminals comprises a cylindrical shaft portion, a first cleaning extension, and a second cleaning extension. The first cleaning extension extends outward from the cylindrical shaft portion and comprises a first curved and knurled surface region. Likewise, the second cleaning extension extends outward from the cylindrical shaft portion in a direction substantially parallel to the first cleaning extension and comprises a second curved and knurled surface region. The first cleaning extension and the second cleaning extension define a gap therebetween.

Abstract: To provide an electron beam assisted EEM method that can realize ultraprecision machining of workpieces, including glass ceramic materials, in which at least two component materials different from each other in machining speed in a machining process are present in a refined mixed state and the surface state is not even, to a surface roughness of 0.2 to 0.05 nm RMS. The EEM method comprises a working process in which a workpiece and chemically reactive fine particles are allowed to flow along the working face to remove atoms on the working face chemically bonded to the fine particles together with the fine particles through chemical interaction between the fine particles and the working face interface. The workpiece comprises at least two component materials present in a refined mixed state and different from each other in machining speed in the machining process.

Abstract: A notch-locating fixture for forming notches at predetermined locations along a needle wire used in a surgical suturing apparatus includes a base having at least one semi-circular recess shaped and dimensioned for receiving the needle wire. The fixture also includes a cover member including at least one aligned slot formed therein in a manner providing a grinding wheel with access to needle wire held between the base and the cover member. The fixture further includes a securing structure selectively coupling the base to the cover member.

Abstract: An abrading tool for refurbishing pin contacts in situ in an electrical connector is provided. The abrading tool includes a bore defined in a first end for receiving the pin contacts therein and a transverse slot which intersects the bore. A removable abrading element is received within the slot and positioned therein in alignment with the bore.

Abstract: A magnetoresistive read head has read head layers that are shaped to form an air bearing surface and a sensor stripe cavity with an open side at the air bearing surface. A sensor stripe is deposited in the sensor stripe cavity. The sensor stripe has a front surface that is set back from the air bearing surface to define an encapsulation cavity extending from the front surface to the air bearing surface. An encapsulation layer is deposited in the encapsulation cavity. The encapsulation layer encapsulates the front surface.

Abstract: A conductive polishing pad that includes one or more anodes and one or more cathodes formed at or near the polishing surface of a polishing pad. The anodes and cathodes are connected to a wiring network that is part of an electrical connector system that allows for a current source to be connected to the polishing pad and provide a current to the anodes and cathodes even if the polishing pad is moving relative to the current source. An electrolytic polishing fluid introduced between the polishing surface and the metal layer of a wafer forms an electrical circuit between the anode, cathode and the metal layer. The conductive polishing pad allows for electrochemical mechanical polishing (ECMP) to be performed on a conventional chemical mechanical polishing (CMP) tool.

Abstract: The electro-chemical machining apparatus of this invention is designed to smoothing a metal film by efficiently reducing initial rough surface and removing excessive metal film with reduced damages to the metal film. For this end, the electro-chemical machining apparatus performs electro-chemical machining of an object to be machined having a metal film on the surface to be machined. Such apparatus has a means for holding the object to be machined, a wiper for wiping the surface of the object to be machined, a means for supplying electrolytic solution onto the surface of the object to be machined, a first electrode disposed at a position opposed to the surface of the object to be machined, a second electrode disposed at a peripheral portion on the surface of the object to be machined, and a power supply for causing electrical current to flow between the second electrode on the surface of the object to be machined and the first electrode.

Abstract: According to one embodiment, a method of planarizing of a surface of a semiconductor substrate is provided. A copper layer is inlaid in a dielectric layer of the substrate. The semiconductor substrate is disposed opposite to a polishing pad and relative movement provided between the pad and the substrate. An electrolytic slurry containing abrasive particles is flowed over the substrate or the pad. A voltage is applied between the polishing pad and the substrate to perform electropolishing of the substrate. The rate of chemical mechanical polishing is controlled by the down force applied to a polishing head urging the substrate against the polishing pad.

Abstract: An electrolytic polishing apparatus for electrolytic-polishing a conductive film subject to formed on a substrate including a resistance measuring unit for measuring the resistance of the film. The electrolytic polishing apparatus may also include a termination point detecting portion for detecting a termination point of polishing by reading a variation of the resistance value measured by the resistance measuring unit, or a polishing control portion for terminating electrolytic polishing on the basis of the termination point of polishing detected by the termination point detecting portion.

Abstract: Embodiments of the invention include methods and apparatus for electrodialytic polishing of various layers formed on semiconductor substrates. In certain embodiments the use of electrodialytic processes in conjunction with chemical mechanical forces to achieve a copper interconnect with a desired level of planarity and process performance. In certain embodiments electrodialytic polishing uses an electrodialytic polish pad, which is an active pad which has copper binding groups provided in its core structure and has an added capability of allowing electrical conductivity. An electrodialytic polish pad allows transfer of cations or anions through a membrane in the presence of an electric field and into a cathodic electrolyte. Under the influence of an electric field the electrodialytic polish pad and/or electrodialytic pads are continuously refreshed to bind cations.

Abstract: A pipe electropolishing system (10, 10a) for in place polishing of a pipe (28) has provision for detecting the instant position of a cathode (14) within the pipe (28) such as cable marks (52) and cable mark sensor (50), an infrared camera (60), heat sensing crayon marks (64), thermisters (66), and capacitance sensors (68), used individually or in combination. According to the inventive in place electropolishing method (80) when it is determined that the cathode is in a nonuniform portion (70) of the pipe (28), then increased polishing action is provided as by increasing the voltage using a variable power supply (30a) and/or by slowing down the progress of the cathode (14) using a variable speed cable puller (18).

Abstract: A press die for forming a contact of an electrical connector by blanking a metal sheet is disclosed. The die has a die insert for shaving an engaging section of the contact for electrically engaging with a conductive portion of a device mating with the electrical connector so that an electrical connection between the connector and the device is created. A profile of the die insert for the shaving operation is subject to a final finishing process by an ultrasonic machining using a machining agent consisted of diamond particles dispersed in liquid, wherein the diamond particles have a grit size of 8000#. The profile of the die insert has a surface roughness of 0.08 Ra.

Abstract: Methods for electrochemically polishing copper films on semiconductor substrates use an alkaline solution with a pH in the range of about 8.0 to 10.5. A constant current density of from 5 to 100 amperes per square foot is applied to an electrochemical cell formed by an electrode, the alkaline solution and the copper film. Copper is removed at a rate of from 500 to 10,000 angstroms per minute. The end point for the electro-polishing is detected by a sudden change in applied voltage. The alkaline polishing solution may also contain copper ions so that when the current direction is reversed, copper is deposited onto the copper film. Furthermore, this copper deposition will occur selectively on the exposed copper surface but not on the exposed barrier layer surface. Hence, the method can compensate for dishing and erosion by re-depositing copper in regions after too much copper was removed from those regions.

Abstract: A method and system for lapping a magnetic transducer using an electrical lapping guide is presented. This includes rough lapping the transducer based on a first signal and fine lapping the transducer based on a second signal from a dummy transducer. The dummy transducer can have electrical properties substantially similar to electrical properties of the magnetic transducer. The first signal can include a stripe height calculated as a function of a reference resistor element and an analog resistor element. The second signal can include lap to reader resistance from the dummy transducer and a stripe height calculated from a reference resistor element and an analog resistor element. The dummy transducer can also provide process noise monitoring capability during lapping.

Abstract: This invention relates to an improved apparatus and method for finish machining brake components. The apparatus includes an electrode ring adapted to be secured to a rotatable shaft. The electrode ring includes at least one plurality of circumferentially spaced apart electrodes adapted to be electrically connected to a power supply. Each one of the at least one plurality of electrodes are arranged adjacent each other around the circumference of the electrode ring. The apparatus further includes a positioning mechanism for positioning a rotating, electrically grounded rotor adjacent the electrode ring until sparks are formed between the electrode ring and the rotor. The sparks vaporize a portion of the rotor surface thereby creating a finished surface on the rotor having the desired dimensions.

Abstract: A scraping apparatus in which a scraping process is performed on a surface of a work to be machined to form recesses thereon by converging a laser beam outputted from a laser oscillator by a converging lens and irradiating the converged laser beam onto the work relatively moving to the laser beam for removing some portions by being melted or evaporated from the surface thereof.

Abstract: This invention relates to an improved apparatus and method for finish machining brake components. The apparatus includes an electrode ring adapted to be secured to a rotatable shaft. The electrode ring includes at least one plurality of circumferentially spaced apart electrodes adapted to be electrically connected to a power supply. Each one of the at least one plurality of electrodes are arranged adjacent each other around the circumference of the electrode ring. The apparatus further includes a positioning mechanism for positioning a rotating, electrically grounded rotor adjacent the electrode ring until sparks are formed between the electrode ring and the rotor. The sparks vaporize a portion of the rotor surface thereby creating a finished surface on the rotor having the desired dimensions.

Abstract: An abrasive super-finishing method for workpieces, such as metallic thin-film magnetic discs, employs a polishing/texturing material having a backing, such as synthetic resin film or woven material or non-woven cloth, and a layer which can hold abrasive grains on the backing, such as flocked fibre or a porous polymer foam, on one surface of the backing. An electrolytic solution in which abrasive grains are suspended is supplied to the polishing/texturing material to conduct polishing or texturing of the workpiece surfaces. The workpiece is connected to an anode and a pressure roller or a cathode bar is connected to a cathode. A voltage is applied between the workpiece and the pressure roller or cathode bar to conduct simultaneously electrolytic polishing and abrasive polishing/texturing.

Abstract: An apparatus and method for polishing a semiconductor wafer. A polisher includes a supporting plate having a conductive film and a polishing cloth formed on the conductive film of the supporting plate. The polishing cloth has a plurality of openings to expose the conductive film. A wafer holder has a conductive wafer holding surface to hold a semiconductor wafer having current detective patterns and an insulating film covering the current detective patterns. A polishing slurry supply device supplies a polishing slurry including ions to either the polishing cloth or the semiconductor wafer. A current detecting device, connected to the supporting plate and the wafer holder, detects a magnitude of a current flowing across the supporting plate and the wafer holder through the conductive wafer holding surface, the semiconductor wafer held by the wafer holder, the current detective patterns of the semiconductor wafer, the polishing slurry filled in the openings of the polishing cloth, and the conductive film.