Abstract: Technology is disclosed herein that the enhances the measurability and scalability of qubits in a quantum computing environment. In an implementation, a superconducting amplifier device comprises a parametric amplifier and a tunable coupling between the parametric amplifier and a readout cavity external to the superconducting amplifier device. The tunable coupling allows an entangled signal, associated with a qubit in the readout cavity, to transfer from the readout cavity to the parametric amplifier. The parametric amplifier amplifies the entangled signal to produce an amplified signal as output to a measurement sub-system.

Abstract: A thermoelectric composite includes: a first layer including a thermoelectric semiconductor material; and a second layer including a conductive inorganic filler, wherein the first and second layers are stacked in layered form constituting a superlattice structure.

Abstract: According to an exemplary embodiment of the present invention, provided is a method for manufacturing a superconductor including magnesium diboride, the method including: a first mixture preparation step of preparing a first mixture including a boron powder and a liquid chlorinated hydrocarbon compound; a second mixture preparation step of preparing a second mixture including the first mixture and a magnesium powder; a molded body manufacturing step of manufacturing a molded body by pressurizing the second mixture; and a sintering step of sintering the molded body to manufacture a superconductor including magnesium diboride.

Abstract: Proposed is a novel embedded structure for suppressing a disturbance in the cross sectional shape and a non-uniform deformation of a metal member arising in a precursor when producing an MgB2 multi-core wire material by a surface reduction process. This superconductive multi-core wire material precursor is characterized by having: soft Cu and Fe pure metals disposed in the center; mixed powder elements, each comprising as a sheath material a metal such as Fe or Nb having a barrier effect preventing a reaction between Mg and Cu, the mixed powder elements being disposed in a form that surrounds the periphery of the soft metal serving as the central material; and disposed around these, an outer shell layer produced from a harder metal than the central material and the sheath material.

Abstract: In various embodiments, superconducting wires incorporate diffusion barriers composed of Ta alloys that resist internal diffusion and provide superior mechanical strength to the wires.

Abstract: A superconducting wire rod according to an aspect of the present disclosure is a superconducting wire rod having a flat cross-sectional shape which is characterized in that a voltage is generated with a lower current density or a higher voltage is generated with the same current density in a region on at least one end side in a wire rod width direction as compared with a region other than the region on the at least one end side.

Abstract: The present invention relates to a method for forming nano-gaps in graphene. The method may include applying a voltage across a region of graphene such that a nano-gap which extends across the entire width of the graphene is formed, wherein the region across which the voltage is applied may include a point which is the narrowest in the region.

Abstract: It is an object of the present invention to provide an MgB2 wire helping to achieve compatibility between the ease with which superconducting connection is effected and thermal stability. A superconducting wire according to the present invention includes: an elemental wire formed of MgB2; and a first metal not reacting with Mg. In a section orthogonal to the longitudinal direction of the superconducting wire, the region extending from the center of the superconducting wire to the installation position of the elemental wire is formed by the elemental wire and the first metal.

Abstract: A superconducting material includes YBa2Cu3O7-? and a nano-structured, preferably nanowires, WO3 dopant in a range of from 0.01 to 3.0 wt. %, preferably 0.075 to 0.2 wt. %, based on total material weight. Methods of making the superconductor may preferably avoid solvents and pursue solid-state synthesis employing Y, Ba, and/or Cu oxides and/or carbonates.

Abstract: A high voltage capacitor includes multiple capacitor packs housed in a canister. A capacitor pack status monitor includes a current sensor measuring an electric current through an associated capacitor pack and a radio transmitting a first signal representative of the electric current through a selected capacitor pack. The monitor also includes a voltage sensor measuring an electric voltage across the associated capacitor pack and a radio transmitting a second signal representative of the electric voltage across the selected capacitor pack. Electronics compute an impedance associated with each capacitor pack. Each current sensor may include a current transformer positioned around a main power line energizing a respective capacitor pack.

Abstract: The present invention provides a conversion material including a first phase providing a matrix and a second phase comprising a nanoscale or microscale material providing electron mobility. The conversion material converts heat from a single macroscopic reservoir into voltage.

Abstract: A superconductor wire having a first HTS layer with a first cap layer in direct contact with a first surface of the first HTS layer and a second cap layer in direct contact with a second surface of the first HTS layer. There is a first lamination layer affixed to the first cap layer and a stabilizer layer having a first surface affixed to the second cap layer. There is a second HTS layer and a third cap layer in direct contact with a first surface of the second HTS layer and a fourth cap layer in direct contact with a second surface of the second HTS layer. There is a second lamination layer affixed to the fourth cap layer. The second surface of the stabilizer layer is affixed to the third cap layer and there are first and second fillets disposed along a edge of the laminated superconductor.

Abstract: A two-dimensional hydrogen boride-containing sheet of the present invention has a two-dimensional network that consists of (HB)n (n?4).

Abstract: A transistor. In some embodiments, the transistor includes a first superconducting source-drain, a second superconducting source-drain, a graphene channel including at least a portion of a graphene sheet, and a conductive gate. The first superconducting source-drain, the second superconducting source-drain, and the graphene channel together form a Josephson junction having a critical current. The graphene channel forms a current path between the first superconducting source-drain and the second superconducting source-drain. The conductive gate is configured, upon application of a electric field across the conductive gate and the graphene channel by applying a voltage, to modify the critical current.

Abstract: An oxide superconducting wire includes an oriented metal substrate, an intermediate layer formed on the oriented metal substrate, and an oxide superconducting layer formed on the intermediate layer. The oriented metal substrate has an in-plane orientation ?? of 7° or less. The intermediate layer is formed of a single layer.

Abstract: An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first semiconductor material with the epitaxial layer having a first conductivity type. At least one nanowire comprising a second semiconductor material having a second conductivity type doped differently than the first conductivity type of the first semiconductor material forms a junction crossing region with the first semiconductor material. The nanowire and the first semiconductor material form an avalanche photodiode (APD) in the junction crossing region to enable single photon detection. In an alternative configuration, the APD is formed as a p-i-n crossing region where n represents an n-type material, i represents an intrinsic layer, and p represents a p-type material.

Abstract: A magnetic field effect transconductor device (M-FET) capable of carrying a modulated current when receiving an external magnetic field includes at least a ferromagnetic layer and a non-ferromagnetic layer disposed on the ferromagnetic layer; the non-ferromagnetic layer has a first skin depth of the current and a first thickness smaller than the first skin depth; and the ferromagnetic layer has a second skin depth of the current and a second thickness smaller than the second skin depth. Applying an external DC magnetic field along the longitudinal axis of the device and an AC EM wave propagating in the same direction as the DC field, the M-FET demonstrates frequency dependent current switching device. A method for making the transconductor includes depositing a photoresist over transconductors and patterning the photoresist, or depositing transconductors over a patterned photoresist and performing a lift off process.

Abstract: An article of manufacture includes a first graphene layer, a second graphene layer over the first graphene layer, the second graphene layer oriented at a first interlayer twist angle with respect to the first graphene layer and bonded by interlayer covalent bonds to the first graphene layer, and a third graphene layer over the second graphene layer, the third graphene layer oriented at a second interlayer twist angle with respect to the second graphene layer and bonded by interlayer covalent bonds to the second graphene layer. A multi-layer graphene article includes at least three graphene layers, each graphene layer being oriented at an interlayer twist angle with respect to an adjacent graphene layer and bonded by interlayer covalent bonds to the adjacent graphene layer.

Abstract: A complex electronic component includes: an element part and an electrostatic discharge (ESD) protection part disposed on the element part. The ESD protection part includes: first and second discharging electrodes having a gap disposed therebetween; a blocking layer disposed between the first and second discharging electrodes; and a discharging layer which is disposed to cover an upper portion of the blocking layer and is in contact with top surfaces of the first and second discharging electrodes.

Abstract: The various embodiments described herein include methods, devices, and systems for fabricating and operating photodetector circuitry. In one aspect, a photon detector system includes: (1) a first superconducting wire having a first threshold superconducting current; (2) a second superconducting wire having a second threshold superconducting current; (3) a resistor coupled to the first wire and the second wire; (4) current source(s) coupled to the first wire and configured to supply a current that is below the second threshold current; and (3) a second circuit coupled to the second wire. In response to receiving light at the first wire, the first wire transitions from a superconducting state to a non-superconducting state. In response to receiving light at the second wire while the first wire is in the non-superconducting state, the second wire transitions to a non-superconducting state, redirecting the first current to the second circuit.

Abstract: A technique relates to protecting a tunnel junction. A first electrode paddle and a second electrode paddle are on a substrate. The first and second electrode paddles oppose one another. A sacrificial shorting strap is formed on the substrate. The sacrificial shorting strap connects the first electrode paddle and the second electrode paddle; The tunnel junction is formed connecting the first electrode paddle and the second electrode paddle, after forming the sacrificial shorting strap. The substrate is mounted on a portion of a quantum cavity. The portion of the quantum cavity is placed in a vacuum chamber. The sacrificial shorting strap is etched away in the vacuum chamber while the substrate is mounted to the portion of the quantum cavity, such that the sacrificial shorting strap no longer connects the first and second electrode paddles. The tunnel junction has been protected from electrostatic discharge by the sacrificial shorting strap.

Abstract: An oxide superconducting wire of the invention includes a substrate, an intermediate layer which is laminated on a main surface of the substrate, has one or more layers having an orientation, and has one or more non-orientation regions extending in a longitudinal direction of the wire, and an oxide superconducting layer which is laminated on the intermediate layer, has a crystal orientation controlled by the intermediate layer, and has non-orientation regions located on the non-orientation regions in the intermediate layer and is formed into multiple filaments.

Abstract: A superconducting wire having improved electrical and physical properties.

Abstract: High-temperature superconducting (HTS) devices and methods are disclosed. An HTS cable subassembly has a rectangular shaped cross section. The subassembly includes a stack of tapes formed of a superconducting material, and a cable subassembly wrapper wrapped around the stack of tapes. The tapes in the stack are slidably arranged in a parallel fashion. A cable assembly is formed of a cable assembly wrapper formed of a second non-superconducting material disposed around an n×m array of cable subassemblies. Within a cable assembly, a first cable subassembly of the array of subassemblies is oriented substantially perpendicular to a second cable subassembly with regard to the plurality of tapes. A compound-cable assembly is formed by joining two or more cable assemblies. A high-temperature superconducting magnet is formed of a solenoidal magnet as well as dipole and quadrupole magnets wound of a cable subassembly, a cable assembly, and/or a compound cable assembly.

Abstract: A technique relates to protecting a tunnel junction. A first electrode paddle and a second electrode paddle are on a substrate. The first and second electrode paddles oppose one another. A sacrificial shorting strap is formed on the substrate. The sacrificial shorting strap connects the first electrode paddle and the second electrode paddle; The tunnel junction is formed connecting the first electrode paddle and the second electrode paddle, after forming the sacrificial shorting strap. The substrate is mounted on a portion of a quantum cavity. The portion of the quantum cavity is placed in a vacuum chamber. The sacrificial shorting strap is etched away in the vacuum chamber while the substrate is mounted to the portion of the quantum cavity, such that the sacrificial shorting strap no longer connects the first and second electrode paddles. The tunnel junction has been protected from electrostatic discharge by the sacrificial shorting strap.

Abstract: A superconducting cross-bar switch system comprises a first input port coupled to a first output port through a first variable inductance coupling element, and a second output port through a third variable inductance coupling element, and a second input port coupled to the first output port through a second variable inductance coupling element, and the second output port through a fourth variable inductance coupling element. A switch controller controls the setting of the cross-bar switch between a Bar state and a Cross state by changing the variable inductance coupling elements between opposing inductance states. This allows for selective routing of signals between the first input port to the first output port and the second input port to the second output port in the Bar state, and the first input port to the second output port and the second input port to the first output port in the Cross state.

Abstract: A technique relates to protecting a tunnel junction. A first electrode paddle and a second electrode paddle are on a substrate. The first and second electrode paddles oppose one another. A sacrificial shorting strap is formed on the substrate. The sacrificial shorting strap connects the first electrode paddle and the second electrode paddle; The tunnel junction is formed connecting the first electrode paddle and the second electrode paddle, after forming the sacrificial shorting strap. The substrate is mounted on a portion of a quantum cavity. The portion of the quantum cavity is placed in a vacuum chamber. The sacrificial shorting strap is etched away in the vacuum chamber while the substrate is mounted to the portion of the quantum cavity, such that the sacrificial shorting strap no longer connects the first and second electrode paddles. The tunnel junction has been protected from electrostatic discharge by the sacrificial shorting strap.

Abstract: An organic light-emitting diode (OLED) display panel includes an organic layer positioned on a first electrode and a multilayer thin film positioned on the organic layer. The multilayer thin film is formed of a stack of graphene. The multilayer thin film has an interlayer bonding between two or more upper layers thereof.

Abstract: A superconductor wire includes: a superconducting laminate that includes: a substrate and an intermediate layer; a superconductor layer, and a metal stabilization layer which are laminated on the substrate; and an insulation coating layer that covers an outer surface of the superconducting laminate and is formed by baking a resin material. Further, a maximum height Rz of at least a part of the outer surface of the superconducting laminate covered with the insulation coating layer is 890 nm or less.

Abstract: A technique relates to protecting a tunnel junction. A first electrode paddle and a second electrode paddle are on a substrate. The first and second electrode paddles oppose one another. A sacrificial shorting strap is formed on the substrate. The sacrificial shorting strap connects the first electrode paddle and the second electrode paddle; The tunnel junction is formed connecting the first electrode paddle and the second electrode paddle, after forming the sacrificial shorting strap. The substrate is mounted on a portion of a quantum cavity. The portion of the quantum cavity is placed in a vacuum chamber. The sacrificial shorting strap is etched away in the vacuum chamber while the substrate is mounted to the portion of the quantum cavity, such that the sacrificial shorting strap no longer connects the first and second electrode paddles. The tunnel junction has been protected from electrostatic discharge by the sacrificial shorting strap.

Abstract: A superconducting wire connection structure comprises a first superconducting wire and a second superconducting wire, ends of which are arranged across from each other, and a third superconducting wire which spans and connects the first superconducting wire and the second superconducting wire along a longitudinal direction of the first superconducting wire and the second superconducting wire. Each of the first superconducting wire, the second superconducting wire and the third superconducting wire is a tape-shaped superconducting wire which includes a substrate laminated with at least a superconductive layer. The third wire is narrower in at least one portion than the first superconducting wire and the second superconducting wire.

Abstract: A printed material having excellent smoothness is provided even when a resin ink is used. An ink jet printing method uses an ink jet printing apparatus 1 including a head 5, and a printing platen 2 for heating a medium 100 from a back side of a surface of the medium 100, wherein the ink contains a solvent, a colorant and a resin, in which the resin is emulsionized or suspended. The ink jet printing method includes a drying step in which the ink is dried by the printing platen 2 after the ink is landed onto the medium 100.

Abstract: An MgB2 superconducting wire excellent in critical current density property is supplied by using a crystalline boron powder which is low in costs and easy to obtain. For the wire, a precursor of the MgB2 superconducting wire is used, the precursor having a linear structure including a core region containing a magnesium powder and a boron powder, and a sheath region formed of a metal covering an outer circumferential portion of the core region. The boron powder is crystalline, and has a volume-mean particle size of 2 ?m or less.

Abstract: A superconducting structure (1) has a plurality of linked band-segments (2), with each linked band-segment (2) having a substrate (3) and a superconducting layer deposited onto it (4). The linked band-segments (2) are joined to one another by superconducting layers (4) that face each other. Each linked band-segment (2) is joined to two additional band-segments (7a, 7b) in such a way that the superconducting layers (4) of the two additional band-segments (7a, 7b) and of the linked band-segment (2) face each other. The additional band-segments (7a, 7b) together substantially overlap the total length (L) of the linked band-segment (2). This provides for a superconducting structure, which exhibits high superconductivity and which is very suitable for long distances.

Abstract: A method for making superconducting wire is provided. A number of superconducting preforms is formed on a carrier. A carbon nanotube layer is placed spaced from and opposite to the carrier. The superconducting preforms are moved from the carrier onto the carbon nanotube layer by applying an electric field between the carbon nanotube layer and the carrier. A composite wire is made by treating the carbon nanotube layer with the superconducting preforms thereon. Finally, the composite wire is sintered.

Abstract: An oxide superconducting thin film wherein nanoparticles functioning as flux pins are dispersed in the film is provided. The oxide superconducting thin film wherein the nanoparticles in the oxide superconducting thin film have a dispersing density of 1020 particles/m3 to 1024 particles/m3 is provided. The oxide superconducting thin film wherein the nanoparticles have a particle diameter of 5 nm to 100 nm is provided. A method of manufacturing an oxide superconducting thin film wherein a predetermined amount of a solution obtained by dissolving nanoparticles functioning as flux pins in a solvent is added to a solution obtained by dissolving an organometallic compound in a solvent to prepare a source material solution for an oxide superconducting thin film, and the source material solution is used to manufacture the oxide superconducting thin film through a coating-pyrolysis process is provided.

Abstract: A superconducting article comprises a substrate, a buffer layer overlying the substrate, and a high-temperature superconducting (HTS) layer overlying the buffer layer. The HTS layer includes a plurality of nanorods. A method of forming a superconducting article comprises providing a substrate, depositing a buffer layer overlying the substrate; forming a nanodot array overlying the buffer layer; depositing an array of nanorods nucleated on the nanodot array; and depositing a high-temperature superconducting (HTS) layer around the array of nanorods and overlying the buffer layer.

Abstract: Disclosed are devices comprising multiple nanogaps having a separation of less than about 5 nm. Also disclosed are methods for fabricating these devices.

Abstract: Provided is an iron-based superconducting material including an iron-based superconductor having a crystal structure of ThCr2Si2, and nanoparticles which are expressed by BaXO3 (X represents one, two, or more kinds of elements selected from a group consisting of Zr, Sn, Hf, and Ti) and have a particle size of 30 nm or less. The nanoparticles are dispersed in a volume density of 1×1021m?3 or more.

Abstract: Methods and compositions for the deposition of a film on a substrate. In general, the disclosed compositions and methods utilize a precursor containing calcium or strontium.

Abstract: The films of this invention are high temperature superconducting (HTS) thin films specifically optimized for microwave and RF applications. In particular, this invention focuses on compositions with a significant deviation from the 1:2:3 stoichiometry in order to create the films optimized for microwave/RF applications. The RF/microwave HTS applications require the HTS thin films to have superior microwave properties, specifically low surface resistance, Rs, and highly linear surface reactance, Xs, i.e. high JIMD. As such, the invention is characterized in terms of its physical composition, surface morphology, superconducting properties, and performance characteristics of microwave circuits made from these films.

Abstract: Electrical, mechanical, computing, and/or other devices that include components formed of extremely low resistance (ELR) materials, including, but not limited to, modified ELR materials, layered ELR materials, and new ELR materials, are described.

Abstract: Terahertz radiation source and method of producing terahertz radiation, said source comprising a junction stack, said junction stack comprising a crystalline material comprising a plurality of self-synchronized intrinsic Josephson junctions; an electrically conductive material in contact with two opposing sides of said crystalline material; and a substrate layer disposed upon at least a portion of both the crystalline material and the electrically-conductive material, wherein the crystalline material has a c-axis which is parallel to the substrate layer, and wherein the source emits at least 1 mW of power.

Abstract: A voltage nonlinear resistor is made of a sintered body that mainly includes zinc oxide grains, spinel grains including zinc and antimony as main ingredients, and a bismuth oxide phase, in which the bismuth oxide phase includes at least one of alkali metals selected from the group of potassium and sodium at a ratio in the range of 0.036 at % or higher and 0.176 at % or lower. The voltage nonlinear resistor has good voltage nonlinearity and loading service life characteristics, and can be used for a lightning arrester.

Abstract: Method of making a low resistivity electrical connection between an electrical conductor and an iron pnictide superconductor involves connecting the electrical conductor and superconductor using a tin or tin-based material therebetween, such as using a tin or tin-based solder. The superconductor can be based on doped AFe2As2, where A can be Ca, Sr, Ba, Eu or combinations thereof for purposes of illustration only.

Abstract: The present invention refers to obtaining a solution of metal-organic precursors with a maximum fluorine content of 10% using the solution previously described in patent ES2259919 B1 as the starting point. This modification enables carrying out the thermal treatment of superconducting decomposition layers (pyrolysis) and crystal growth in a single stage. In addition, the low fluorine content reduces the risks of toxicity and corrosion.

Abstract: The present invention is a solution or colloid of fullerene, SWNTs, or graphene in cyclic terpenes, lactones, terpene-alcohol, fatty-acid alcohols, and lactones following ultrasonication and ultracentrifugation processing, for oil-energy, biological, electrical-thermal applications. The compositions are useful as fuel/oil/grease/gels (synthetic included), oil/fuel/additives/propellants, identification dyes, and heat-transfer fluids. Other functions are phase-change fluids for solar energy power plants, antifreeze, electronic dyes, electrolytic fluid/solvent, electrically-thermally conductive material for electrochemical, dielectric, filler/adhesive for semiconductor, eletro-optical, and liquid crystal substrates/coatings for touch sensitive transmissive or reflective displays. When combined with gelatin the formulations can function as dichroic-optical coatings for thin-films/waveguides/holograms.

Abstract: The present invention relates to a nanorod-containing precursor powder, a nanorod-containing superconductor bulk and a method for manufacturing the same. The method for manufacturing a nanorod-containing precursor powder includes the following steps: providing a precursor powder; and forming a plurality of nanorods on particle surfaces of the precursor powder. Accordingly, the present invention can significantly enhance critical current density and pinning force.

Abstract: The present invention provides a Bi2223 oxide superconductor composed of Bi, Pb, Sr, Ln, Ca, Cu, and O, wherein the Ln is at least one selected from La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and the composition ratio of Sr to Ln is a composition ratio described below. The Bi2223 oxide conductor has a high critical current density in a magnetic field at low temperature and is capable of maintaining a high critical current density in a self magnetic field even at 77 K. Sr:Ln=(1?x):x (wherein 0.002?x?0.015) Also, the present invention provides a method for producing the Bi2223 oxide superconductor, the method including a step of ionizing a material containing elements, which constitute the Bi2223 oxide superconductor, in a solution; and a step of removing a solvent and causing a thermal decomposition reaction by spraying the solution into a high-temperature atmosphere to produce a powder containing atoms constituting the oxide superconductor.

Abstract: A composite superconductor and methods of providing same include a superconductor powder dispersed within a conductive polymer matrix.