Abstract: A method for the synthesis of well-defined rod-coil block copolymers consisting of P3HT donor and C60 acceptor chromophores (P3HT-b-P(SxAy)-C60) in a molecular architecture is reported for use in bulk-heterojunction (BHJ) solar cells. In thin films of the resulting block copolymer, reproducible self-assembly into well-defined “nanofibrils” is observed. This is the first example of a block copolymer containing a C60 derivative that shows exclusively a nanofibrilar structure. A substantial improvement in device performance is achieved when the block copolymer is used as a “surfactant” for controlling the interface morphology of the P3HT:PCBM donor-acceptor phase domains within the composite.

Abstract: The liquid fullerene derivative according to the present invention contains a fullerene moiety, a benzene ring bonded to the fullerene moiety, and first to third alkyl substituents R1, R2 and R3 bonded to 2-, 4- and 6-positions of the benzene ring, respectively, and the first to third alkyl substituents R1, R2 and R3 each contain at least 12 carbon atoms. The liquid fullerene derivative which is liquid at room temperature without requiring a solvent and easily exhibits the function of the fullerene itself, a method for producing the same, and a device using the same are provided.

Abstract: For provides a superconducting material comprising highly chemically stable Fullerene carbon molecules having a relatively high transition temperature and high chemical stability, C20 Fullerene molecules having stronger electron-lattice interaction than that of C60 Fullerene molecules are used, in order to polymerize the C20 Fullerene molecules into a one-dimensional chain, C20 is incorporated in a gap of a material having a large band gap between a valence band and a conduction band, thereafter, electrons or positive holes are injected into the obtained C20 Fullerene chain polymer via an electric field application for phase transition to a superconductor.

Abstract: The present invention comprises a new nanoscale metal-semiconductor, semiconductor-semiconductor, or metal-metal junction, designed by introducing topological or chemical defects in the atomic structure of the nanotube. Nanotubes comprising adjacent sections having differing electrical properties are described. These nanotubes can be constructed from combinations of carbon, boron, nitrogen and other elements. The nanotube can be designed having different indices on either side of a junction point in a continuous tube so that the electrical properties on either side of the junction vary in a useful fashion. For example, the inventive nanotube may be electrically conducting on one side of a junction and semiconducting on the other side. An example of a semiconductor-metal junction is a Schottky barrier. Alternatively, the nanotube may exhibit different semiconductor properties on either side of the junction.

Abstract: A family of trimetallic nitride endohedral metallofullerenes and their preparation are described. The trimetallic nitride endohedral metallofullerenes have the general formula A3-nXn@Cm where n ranges from 0 to 3, A and X may be trivalent metals and may be either rare earth metal or group IIIB metals, and m is between about 60 and about 200. Further, the A3-nXn@C68, A3-nXn@C78, A3-nXn@C80 families of endohedral fullerenes are described. The trimetallic nitride endohedral metallofullerenes are produced by charging a reactor with a cored graphite rod that has been filled with a metal oxide graphite mixture. The metal oxides correspond to the metals for A and X. The graphite rod is arc discharged in a helium and nitrogen atmosphere to produce the desired trimetallic nitride endohedral metallofullerenes.

Abstract: A novel metal-encapsulated fullerene compound wherein a side chain is introduced in a metal-encapsulated fullerene is provided.A metal-encapsulated fullerene compound represented by the following structural formula (1) is synthesized by causing a disilirane derivative or digermirane derivative having the following structural formula (2) to react with a metal-encapsulation fullerene so as to add functional groups to the fullerene. ##STR1## Herein, M is an encapsulated metal atom, m is an integer from 1 to 3, n is an even number from 28 to 200, and R is a t-butyl group or an aromatic group having alkyl groups in the 2,6-positions, such as mesityl, 2,6-diethylphenyl or 2,6-dimethylphenyl groups.

Abstract: A fullerene derivative of the formula I ##STR1## where the symbols and indices have the following meanings: F is a fullerene radical of the formula (C.sub.20+2m), where m is a number from 1 to 50R.sup.1 to R.sup.8 are identical or different and are each H, CO.sub.2 R.sup.9, CN, COR.sup.10, Cl, Br, I, F, OR.sup.11, C.sub.1 -C.sub.20 -alkyl, phenyl or H, R.sup.1 -R.sup.4 and/or R.sup.5, R.sup.7 can also be part of a cycloalipathic, cycloaromatic or cycloheteroaromatic system which in turn is substituted by C.sub.1 -C.sub.20 -alkyl, aryl, carboxyl, carbonyl, alkoxy, aryloxy, halogen, nitro, alcohol or amine, or R.sup.1 and R.sup.2, R.sup.2 and R.sup.3, R.sup.3 and R.sup.4 can together be ##STR2## where R.sup.15 -R.sup.18 are each H, C.sub.1 -C.sub.20 -alkyl, F, Cl, Br, I or phenyl, andAR is the radical of a fused cyclo-aromatic system, and n is from 1 to 20 and a process for its preparation.

Abstract: Carbonaceous materials based on the fullerene molecules have been developed which allow for superconductivity. The fullerene materials are soluble in common solvents.

Abstract: A stabilized carbon cluster conducting material comprising (i) a core comprising a conducting or superconducting carbon cluster and (ii) a sheath covering the core; a device comprising a substrate having thereon a film of a conducting or superconducting carbon cluster covered with a protective film capable of substantially preventing permeation of oxygen and water in the atmosphere; and processes for producing the stabilized carbon cluster conducting material and the device.

Abstract: A stabilized carbon cluster conducting material comprising (i) a core comprising a conducting or superconducting carbon cluster and (ii) a sheath covering the core; a device comprising a substrate having thereon a film of a conducting or superconducting carbon cluster covered with a protective film capable of substantially preventing permeation of oxygen and water in the atmosphere; and processes for producing the stabilized carbon cluster conducting material and the device.

Abstract: Enhanced flux pinning in superconductors is achieved by embedding carbon nanotubes into a superconducting matrix. The carbon nanotubes simulate the structure, size and shape of heavy ion induced columnar defects in a superconductor such as Bi.sub.2 Sr.sub.2 CaCu.sub.2 O.sub.8+x. The nanotubes survive at treatment temperatures of up to approximately 800.degree. C. both in oxygen containing and in inert atmospheres. The superconducting matrix with nanotubes is heat treated at a lower temperature than the temperature used to treat the best case pure superconductor material.

Abstract: A superconductive fullerene and a process for making such superconductive fullerene are provided. The process involves contacting a quantity of fullerene with the vapor of an interhalogen compound such as ICl. The halogen doped fullerenes exhibited a transition temperature above 60 K.

Abstract: A carbon cluster film has a precisely controlled stable electrical conductivity which does not deteriorate in a short period of time in air. Such a carbon cluster film having a stable electrical conductivity is formed by introducing an impurity into a thin film of fullerenes by ion implantation. The fullerenes include C.sub.60, C.sub.70 or the like.

Abstract: A superconductive fullerene and a process for making such superconductive fullerene are provided. The process involves contacting-a quantity of fullerene with the vapor of an interhalogen compound such as ICl. The halogen doped fullerenes exhibited a transition temperature above 60 K.

Abstract: Superconducting, metal-doped fullerenes are provided, along with processes for their preparation in relatively high stoichiometric purity. In one embodiment, the processes provide fullerenes of the formula M.sub.x C.sub.q, where M is a metal, x is greater than 0 but less than about 10, and q is at least 60. The processes comprise contacting C.sub.q with metal in an amount and under reaction conditions effective to produce a compound having the formula M.sub.y C.sub.q, and contacting said M.sub.y C.sub.q with a portion of C.sub.q in an amount and under reaction conditions effective to produce said M.sub.x C.sub.q, wherein y is greater than x.

Abstract: A method of producing a new high Tc superconducting material using fullerene molecules as artificial pinning sites for any magnetic flux that may enter the material.