Abstract: Provided is a method of calibrating a nano measurement scale using a standard material including: measuring widths of a plurality of nanostructures included in the standard material and having pre-designated certified values of different sizes by a microscope; determining measured values for the widths of each of the plurality of nanostructures measured by the microscope based on a predetermined criterion; and calibrating a measurement scale of the microscope based on the certified values and the measured values.

Abstract: Provided is a fusion measurement apparatus which increases or maximizes the reliability of a measurement. The fusion measurement apparatus includes an atomic microscope for measuring a surface of a substrate at an atomic level, an electron microscope for measuring the atomic microscope and the substrate, and at least one electrode which distorts the path of a secondary electron on the substrate covered by a cantilever of the atomic microscope so that the secondary electron proceeds to an electron detector of the electron microscope.

Abstract: The arrangement for calibrating probes comprises a source (10) of coherent photon radiation and at least one optically based strain sensor (12a) for measuring an amount of strain (?). The at least one optically based strain sensor is optically coupled to said source of coherent photon radiation. The arrangement further comprises at least one calibration lever (14) having a surface for placement of a tip (21) of a probe (2) to be calibrated, and that is mechanically coupled to the at least one optically based strain sensor for converting a force (F) exerted by said tip at said surface into an amount of strain in the optically based strain sensor. The arrangement further comprises at least one probe holder (24) for holding the probe (2) to be calibrated, the at least one probe holder having a controllable position in at least a direction (y) transverse to the surface of the calibration lever (14).

Abstract: A standard sample (72) that is a nanometer standard prototype, having a standard length that serves as a length reference, includes a SiC layer in which a step-terrace structure is formed. The height of a step, used as the standard length, is equal to the height of a full unit that corresponds to one periodic of a stack of SiC molecules in a stack direction or equal to the height of a half unit that corresponds to one-half periodic of the stack of SiC molecules in the stack direction. In a microscope such as an STM to be measured in a high-temperature vacuum environment, heating in a vacuum furnace enables surface reconstruction with ordered atomic arrangement, while removing a natural oxide film from the surface, so that accuracy of the height of the step is not degraded. Accordingly, a standard sample usable under a high-temperature vacuum is achieved.

Abstract: A structure for the characterization of a tip of an atomic force microscope, the structure being produced on a substrate and including a first support element located above the substrate; a first characterization element with a constant thickness, the first characterization element being located above the first support element and having an upper flat surface and a lower flat surface covering the upper surface of the first support element with two zones extending beyond the upper surface of the first support element, each zone having a characterization surface at one end which is capable of coming into contact with a tip to be characterized, the upper surface and the lower surface of said first characterization element being parallel to the upper surface of the substrate.

Abstract: A method for characterizing an atomic force microscopy tip using a characterization structure having two inclined sidewalls opposite one another and of which at least one actual lateral distance separating the two inclined sidewalls corresponding to a given height is known, the method including scanning the surfaces of the inclined sidewalls by the tip, the scanning being carried out while the tip oscillates solely vertically; measuring, for the given height, the lateral distance separating the two inclined sidewalls, the measurement incorporating the convolution of the shape of the tip with the shape of the characterization structure; and determining a characteristic dimension of the tip as a function of the measured lateral distance, and of the actual lateral distance.

Abstract: A method for line width measurement, comprising: providing a substrate, wherein a raised line pattern is formed on a surface of the substrate, and the line pattern has a width; forming a first measurement structure and a second measurement structure on opposite sidewalls of the line pattern in the width direction of the line pattern; removing the line pattern; and measuring the spacing between the first measurement structure and the second measurement structure, and obtaining the width of the line pattern by subtracting a predetermined offset from the spacing. The present invention facilitates to reduce the uncertainty associated with the measuring process and to improve the measurement precision.

Abstract: An atomic force microscopy (AFM) method includes a scanning probe that scans a surface of a structure to produce a first structure image. The structure is then rotated by 90° with respect to the scanning probe. The scanning probe scans the surface of the structure again to produce a second structure image. The first and second structure images are combined to produce best fit image of the surface area of the structure. The same method is used to produce the best fit image of a flat standard. The best fit image of the flat standard is subtracted from the best fit image of the structure to obtain a true topographical image in which Z direction run out error is substantially reduced or eliminated.

Abstract: Scanning probe microscope (SPM) images are enhanced by enforcing one or more symmetries that can be selected based on suitable Fourier coefficient amplitude or phase angle residuals, and/or geometric Akaike information criteria, and/or cross correlation techniques. Alternatively, this selection can be based on prior knowledge of specimen characteristics. In addition, a scanning microscope point spread function is obtained based on the evaluation of a calibration image by enforcing at least one symmetry and can be applied to other image acquisitions.

Abstract: Atomic force photovoltaic microscopy apparatus and related methodologies, as can be used to quantitatively measure spatial performance variations in functioning photovoltaic devices.

Abstract: A calibration structure for probing devices.

Abstract: A method and apparatus are provided of characterizing a re-entrant SPM probe tip (30) through a single scan of a characterizer, thus dramatically increasing throughput, accuracy, and repeatability when compared to prior known tip characterization techniques. The characterizer also preferably is one whose dimensions can be known with a high level of certainty in order to maximize characterization accuracy. These dimensions are also preferably very stable or, if unstable, change catastrophically rather than in a manner that is difficult or impossible to detect. A carbon nanotube (CNT), preferably a single walled carbon nanotube (SWCNT), has been found to be well-suited for this purpose. Multi-walled carbon nanotubes (MWCNTs) (130) and other structures may also suffice for this purpose. Also provided are a method and apparatus for monitoring the integrity of a CNT.

Abstract: A signal coupling system interposed between a scanning probe and a measurement instrument provides signal communication between the scanning probe and the measurement instrument. The signal coupling system has a pre-stressed shape when the scanning probe is in a neutral position. The pre-stressed shape is designated to provide a characteristic impedance of the signal coupling system that varies linearly as a function of displacement of the scanning probe from the neutral position when the scanning probe is displaced, relative to the neutral position, over a designated range of displacements.