Abstract: Disclosed is an electrical-mechanical complex sensor for nanomaterials, including: a detector having a piezoelectric film therein, for measuring a mechanical property of a nanomaterial when a bending or tensile load is applied to the nanomaterial; a first detection film formed at an end of the detector to measure the mechanical property and an electrical property of the nanomaterial) in real time at the same time, when the nanomaterial contacts the first detection film; and a support to which one end of the detector is integrally connected, for supporting the detector.

Abstract: An apparatus and technique for measuring the electrical capacitance between a conducting tip of a scanning probe microscope and a sample surface is described. A high frequency digital vector network analyzer is connected to the probe tip of the cantilever of an atomic force microscope, and data collection is coordinated by a digital computer using digital trigger signals between the AFM controller and the vector network analyzer. Methods for imaging tip-sample capacitance and spectroscopic measurements at a single point on the sample are described. A method for system calibration is described.

Abstract: A method is described for determining a dopant concentration on a surface and/or in layer region lying close to the surface of a semiconductor sample using an atomic force microscope, whose leaf-spring tip is brought into contact with the semiconductor sample, forming a Schottky barrier, wherein an electric alternating potential is applied between the spring-leaf tip and the semiconductor sample in the region of the Schottky barrier in such a way that a space charge region inside the semiconductor sample defining the three-dimensional extension of the Schottky barrier is excited and begins to oscillate within the confines of its spatial extension, said oscillations are transmitted to the leaf-spring, are detected and form the basis for determining the dopant concentration.

Abstract: A method and an apparatus is disclosed for two-dimensional profiling of doping profiles of a material sample with scanning capacitance microscope. A scanning of a two-dimensional structure of a dielectric or partially dielectric material sample with a tip of a probe of the scanning microscope is carried out. The change in capacitance during the scanning motion of the probe from one position on the material sample to the next is measured. Finally, an evaluation of the change in capacitance during the scanning motion of the probe from one position on the material sample to the next as a current is carried out.

Abstract: An apparatus and technique for measuring the electrical capacitance between a conducting tip of a scanning probe microscope and a sample surface is described. A high frequency digital vector network analyzer is connected to the probe tip of the cantilever of an atomic force microscope, and data collection is coordinated by a digital computer using digital trigger signals between the AFM controller and the vector network analyzer. Methods for imaging tip-sample capacitance and spectroscopic measurements at a single point on the sample are described. A method for system calibration is described.