Abstract: Techniques for providing multi-channel telephony are described herein. In different aspects, a multi-channel telephony apparatus may include a sound interface configured to process a multi-channel sound signal including at least one of causing speakers to emit multi-channel sound or receiving multi-channel sound from microphones and a network interface configured to transmit the multi-channel sound signal from the sound interface to one or more communication lines of a telephone network. In some aspects, a dialer may be configured with the network interface to establish a connection with the telephone network.

Abstract: A phase change memory device includes a plurality of memory cells comprising a substrate having a contact surface with an array of conductive contacts to be connected with access circuitry and a nitride layer formed at the contact surface. A plurality of vias are formed through the nitride layer to the contact surface and correspond to each conductive contact, the vias including a conformal conductive seed layer lining each via along exposed portions of the nitride layer and the contact surface and having oxidized edges. A dielectric layer is recessed within the conformal conductive seed layer and exposes a center region of each via. A phase change material is recessed within the center region of each via. A conductive material that remains conductive upon oxidation is formed over the phase change material. A top electrode is formed on each memory cell.

Abstract: For assigning a test pattern to a class chosen from a predefined set of classes, the class membership probability for the test pattern is calculated as well as the confidence interval for the class membership probability based upon a number of training patterns in a neighborhood of the test pattern in the feature space. The number of training patterns in the neighborhood of the test pattern is obtained from computing a convolution of a density function of the training patterns with a Gaussian smoothing function centered on the test pattern, where the density function of the training patterns is represented as a mixture of Gaussian functions. The convolution of the smoothing function and the mixture of Gaussian functions can be expressed analytically.

Abstract: In one embodiment of the disclosure, a method includes providing a carrier substrate, forming a first region over an upper surface of the substrate, creating an electrical component using a planar process, embedding the electrical component in the dielectric layer, and removing a substrate portion of the electrical component. The first region includes a dielectric layer and may be made of any material that electrically isolates the electrical component from the carrier substrate. The electrical component may be created using a planar process thereby having an epitaxial surface that is embedded in the dielectric layer.

Abstract: A lubrication system for a spline interface (20) includes at least one debris chamber (46) located radially outboard of the spline interface (20) of a first rotating component (16) and a second rotating component (18). Wear debris (44) is urged from the spline interface (20) toward the at least one debris chamber (46) by rotation of the first and second rotating components (16, 18) about a central axis (14). At least one lubricant reservoir (36) contains a volume of lubricant (40), wherein at least a portion of the volume of lubricant (40) flows toward the spline interface (20) in response to the wear debris (44) being urged from the spline interface (20) toward the at least one debris chamber (46).

Abstract: Methods for implanting an silaborane molecule or a selected ionized lower mass byproduct into a workpiece generally includes vaporizing and ionizing silaborane molecule in an ion source to create a plasma and produce silaborane molecules and its ionized lower mass byproducts. The ionized silaborane molecules and lower mass byproducts within the plasma are then extracted to form an ion beam. The ion beam is mass analyzed with a mass analyzer magnet to permit selected ionized silaborane molecules or selected ionized lower mass byproducts to pass therethrough and implant into a workpiece.

Abstract: A method of implementing voltage level shifting for a memory device includes coupling one or more evaluation clock signals to a memory address decode circuit, the one or more evaluation clock signals operating at a first voltage supply level; and coupling a restore clock signal to the memory address decode circuit, the restore clock signal operating at a second voltage supply level that is higher than the first voltage supply level; wherein one or more outputs of the memory address decode circuit operate at the second voltage supply level.

Abstract: There are provided a plurality of sheet feed trays in which sheets are stored, a sheet feeding section which enables a continuous sheet feeding of sheets stored in the above sheet feed tray, and a control section which controls the above sheet feeding section and has an auto tray switch function, and the aforesaid control section obtains information on an amount of sheets stored in the above sheet feed tray, during a continuous sheet feeding from the above sheet feed tray, and judges whether or not the amount of the remaining sheets in the above sheet feed tray satisfies the prescribed condition. In the case where the above prescribed condition is satisfied, the control section stops motion of sheet feeding from the above sheet feed tray while leaving sheets in the above sheet feed tray.

Abstract: A method for forming an integrated circuit includes transforming at least a portion of a first substrate layer to form a conductive region within the first substrate layer. An integrated circuit device is provided proximate an outer surface of the first substrate layer. The integrated circuit device transmits or receives electrical signals through the conductive region. A second substrate layer is disposed proximate to the outer surface of the first substrate layer to enclose the integrated circuit device in a hermetic environment.

Abstract: A vehicle door latch assembly is provided, the vehicle door latch assembly having: a release lever pivotally secured to the latch assembly for movement between a locked position and an unlatched position; a pendulum stop pivotally secured to the release lever for movement between a blocking position and an unblocking position, wherein the release lever is prevented from moving to the locked position when the pendulum stop is in the blocking position; and a spring for biasing the pendulum stop into the unblocking position wherein the pendulum stop is configured such that movement of the release lever from the unlatched position towards the locked position will cause the pendulum stop to move from the unblocking position to the blocking position such that movement of the release lever from the unlatched position towards the locked position is limited to a predetermined position between the locked position and the unlatched position.

Abstract: The present invention relates to a transition metal complex useful as a transition metal catalyst in the preparation of an ethylene homopolymer or a copolymer of ethylene and an ?-olefin, a catalyst composition comprising the same and a process of preparing an ethylene homopolymer or a copolymer of ethylene and an ?-olefin using the same. More particularly, it relates to a transition metal complex having a cyclopentadiene derivative and at least one phenyl oxide ligand substituted at the 2-position of phenyl with, for example, a silyl group having a C1-C30 hydrocarbon group or a C1-C20 hydrocarbon group, around a group IV transition metal, with no crosslinkage between the ligands, a catalyst composition comprising the transition metal complex and a cocatalyst selected from the group consisting of an aluminoxane and a boron compound, and a process for preparing an ethylene homopolymer or a copolymer of ethylene and an ?-olefin using the same.

Abstract: A tunnel field effect transistor (TFET) includes a source region, the source region comprising a first portion of a nanowire; a channel region, the channel region comprising a second portion of the nanowire; a drain region, the drain region comprising a portion of a silicon pad, the silicon pad being located adjacent to the channel region; and a gate configured such that the gate surrounds the channel region and at least a portion of the source region.

Abstract: A method of forming a semiconductor device includes implanting an amorphizing species into a crystalline semiconductor substrate, the substrate having a transistor gate structure formed thereupon. Carbon is implanted into amorphized regions of the substrate, with specific implant conditions tailored such that the peak concentration of carbon species coincides with the end of the stacking faults, where the stacking faults are created during the recrystallization anneal. The implanted carbon pins partial dislocations so as to prevent the dislocations from disassociating from the end of the stacking faults and moving to a region in the substrate directly below the transistor gate structure. This removes the defects, which cause device leakage fail.

Abstract: A computer program product is configured for performing a method including: receiving at least one command message specifying an I/O operation at a control unit from a channel subsystem, the at least one command message including one or more device command words (DCWs) having a data count and a suppress-length indication (SLI), the SLI configured to instruct the control unit whether to continue to perform the I/O operation in response to the control unit detecting an incorrect length condition; processing at least one of the one or more DCWs; and returning a transport response message including an incorrect length (IL) value, the IL value being a first IL value in response to the SLI being a first SLI value and the data count not matching the amount of data required, the IL value being a second IL value in response to the SLI being a second SLI value and the data count not matching the amount of data required.

Abstract: Implementing intelligent agent services includes generating an ontological domain for an individual based upon sets of information elements. A set of the information elements represents aspects of a detectable behavior of the individual at a point in time. The detectable behavior is one of a number of detectable behaviors of the individual occurring within a physical and virtual geography and in relation to time. The detectable behaviors include an activity conducted by the individual at a computer and a presence of the individual at a function. Implementing the intelligent agent services also includes determining relevance of relationships among the sets of the information elements in the ontological domain, and searching sources of information using the sets of the information elements having a relationship determined to be relevant, and identifying a solution for satisfying an interest based on the search.

Abstract: An exhaust gas cooling apparatus and method for cooling an exhaust gas is provided. The exhaust cooling apparatus has a first fluid conduit and a variable nozzle extending from the first fluid conduit. The variable nozzle being disposed in an inlet end of a second fluid conduit, wherein the variable nozzle has at least two dissimilar materials adjacent to each other and a fluid inlet opening is located between an outer periphery of the variable nozzle and an inner surface of the inlet end of the second fluid conduit. The at least two dissimilar materials vary the size of an opening of the variable nozzle by moving toward or away from a center line of the first fluid conduit in response to a temperature of an exhaust gas flowing through the first fluid conduit.

Abstract: A breaching apparatus includes an impactor element and a self-contained energy source. The self-contained energy source enables the impactor element to impact a first surface of a structure. The impactor element is configured to transmit a localized shock wave through the structure upon impact. The self-contained energy source is capable of accelerating the impactor element to a velocity sufficient to induce spalling at a second surface of the structure. Multiple breaching apparatuses can be supported by a frame to facilitate simultaneous or successive breaching of the structure. The breaching apparatus can be used in a method to breach a concrete structure.

Abstract: Disclosed is a case module for a portable terminal using a thermal adhesive tape. The portable terminal using a thermal adhesive tape includes: a case and a LCD cover of a portable terminal disposed so as to face with each other; a heated sheet made of a conductor and disposed between the case and the LCD cover; a first melting sheet adhered to a face of the heated sheet facing to the case; and a second melting sheet adhered to the other face of the heated sheet facing to the LCD cover, wherein the first sheet is melted to couple the heated sheet and the case to each other and the second sheet is melted to couple the heated sheet and the LCD cover to each other when the heated sheet is heated by a high frequency induction.

Abstract: An adjustable wall hanger includes a body including an outer edge that defines a web. An adjustment feature is formed in the web. The adjustment feature includes a plurality of adjustment zones that define a corresponding plurality of orientation positions for the body. The adjustable wall hanger being selectively positionable to support an object on a wall in one of the plurality of orientation positions.

Abstract: An output control circuit for a memory array includes a latched output node precharged to a first logic state prior to both a read and write operation; first logic that couples memory cell data from a memory read path to the output node during the read operation, the first logic controlled by a timing signal; second logic that internally bypasses the memory read path during a write operation by decoupling it from the output node, such that a logical derivative of write data written to the memory array is also coupled to the output node, the second logic also controlled by the timing signal; and wherein a transition of the output node from the first logic state to a second logic state during the write operation occurs within a time range as that of the same transition during the read operation.